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Feit Electric files second white LED filament patent lawsuit
California-based global lighting and smart home brand Feit Electronic Company Inc has commenced a second white LED filament patent enforcement action against Savant Technologies LLC doing business as GE Lighting in the United States District Court for the Northern District of Ohio. Feit Electric says that, despite being warned, Savant imported and then sold white LED filament light bulbs marketed under the GE brand...
Categories: Новини світу мікро- та наноелектроніки
MICLEDI raises Series A funding to expand team, design and build active backplane ASIC, and create micro-LED display module for AR glasses
MICLEDI Microdisplays B.V. of Leuven, Belgium — a fabless developer of micro-LED display modules for augmented reality (AR) glasses that was spun off from nanoelectronics research center IMEC in 2019 — has announced a first closing of its Series A funding round with participation from imec.xpand, PMV, imec, KBC and SFPIM, demonstrating support for the firm’s commercial and technological progress achieved in the seed round. The seed round award plus additional non-dilutive funding in the form of grants and other vehicles from VLAIO brings total funding to date to nearly $30m...
Categories: Новини світу мікро- та наноелектроніки
onsemi realigns business groups to expand product portfolio and accelerate growth
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has formed an Analog and Mixed-Signal Group (AMG) that will be led by newly appointed group president Sudhir Gopalswamy. The group will be focused on expanding onsemi’s portfolio of power management and sensor interface devices to unlock an additional $19.3bn total addressable market and accelerate the firm’s growth in the automotive, industrial and cloud-end markets...
Categories: Новини світу мікро- та наноелектроніки
Infineon launches CoolSiC MOSFETs 2000V product family
Infineon Technologies AG of Munich, Germany has launched the CoolSiC MOSFETs 2000V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system's reliability even under demanding high-voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is claimed to be the first discrete silicon carbide device with a breakdown voltage of 2000V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14mm and clearance distance of 5.4mm. With low switching losses, the devices are suitable for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications...
Categories: Новини світу мікро- та наноелектроніки
EPC issues Phase-16 Reliability Report
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has issued its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability...
Categories: Новини світу мікро- та наноелектроніки
Navitas unveils plans for 8–10kW power platform supporting 2025 AI power requirements
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced its artificial intelligence (AI) data center technology roadmap for to up to 3x power increase to support similar exponential growth in AI power demands expected in just the next 12–18 months...
Categories: Новини світу мікро- та наноелектроніки
Quarterly smartphone production jumps 12.1% in Q4/2023
Third-quarter 2023 saw a significant rebound in global smartphone production, marking the end of an eight-quarter slump, according to market research firm TrendForce. In a strategic year-end surge, brands amped up production to capture more market share, propelling fourth-quarter smartphone output up 12.1% to 337 million units. Despite this final-quarter growth, 2023 rounded off with a slight 2.1% dip in annual production — totaling 1.166 billion units...
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OIF hosting multi-vendor interoperability demos and expert panels at OFC
The Optical Internetworking Forum (OIF) says that its record-breaking, multi-vendor interoperability demonstrations at the Optical Fiber Communication Conference & Exposition (OFC 2024) in San Diego, CA, USA (24–28 March) will spotlight interoperable solutions in 800ZR, 400ZR and OpenZR+ optics; Energy Efficient Interfaces (EEI) & Co-Packaging; 112G and 224G Common Electrical I/O (CEI); and Common Management Interface Specification (CMIS) implementations...
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Marvell’s Nagarajan to receive Optica’s 2024 David Richardson Medal
Optica (formerly the Optical Society of America, OSA) says that Dr Radhakrishnan Nagarajan has been selected as the 2024 recipient of the David Richardson Medal. Nagarajan is honored for the successful manufacturing and commercialization of indium phosphide (InP)- and silicon (Si)-based photonic integrated circuits for use as optical interconnects with a wide range of applications. Described as an insightful engineer and outstanding innovator and mentor, Nagarajan’s ability to move from concept to commercialization and deployment continues to have a profound impact on our industry, says Optica...
Categories: Новини світу мікро- та наноелектроніки
Tokyo Institute of Technology’s Kenichi Iga awarded Optica’s Frederic Ives Medal/Jarus W. Quinn Prize
Optica (formerly the Optical Society of America, OSA) has named Kenichi Iga, Professor Emeritus and former president of Tokyo Institute of Technology, as recipient of the 2024 Frederic Ives Medal/Jarus W. Quinn Prize for his “pioneering contributions and visionary leadership in the field of semiconductor lasers and optoelectronics and a dedication to training and educating future generations”...
Categories: Новини світу мікро- та наноелектроніки
Optica’s Holonyak Award for Boston University’s Ted Moustakas
Theodore Moustakas (ECE, MSE, Physics) — Professor Emeritus and Distinguished Professor of Photonics and Optoelectronics at Boston University (BU) — has been awarded the Nick Holonyak Jr Award by Optica (formerly the Optical Society of America, OSA) for his pioneering contributions to nitride semiconductor materials and optical devices that helped build the foundation for efficient blue and ultraviolet (UV) light-emitting diodes (LEDs)...
Categories: Новини світу мікро- та наноелектроніки
Aixtron’s Q4 revenue grows to record €214.2m, aiding full-year growth of 36%
For fourth-quarter 2023, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported record revenue of €214.2m, up 30% on €165m last quarter and up 17% on €183.2m a year ago: This is also about three times first-quarter 2023’s revenue of €77.2m, underlining Aixtron’s flexibility in its supply chain and manufacturing...
Categories: Новини світу мікро- та наноелектроніки
Linköping micro-LED spin-off Polar Light Technologies appoints CEO
Polar Light Technologies (PLT) — which stems from research by founder professor Per-Olof Holtz and his team at Sweden’s Linköping University — has appointed Oskar Fajerson as CEO to lead it through the final stages of research and into commercialization of its micro-LED technology...
Categories: Новини світу мікро- та наноелектроніки
Teledyne e2v HiRel releases rad-tolerant S-band LNA for high-rel space and radar applications
Teledyne e2v HiRel Electronics of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) has announced the availability of the TDLNA2050SEP radiation-tolerant S-band low-noise amplifier (LNA), suitable for demanding high-reliability, space and radar applications where low noise figure, minimal power consumption and small package footprint are critical to mission success. Developed on a 90nm enhancement-mode pseudomorphic high-electron-mobility transistor (pHEMT) process, the new LNA is available in an 8-pin dual-flat no-lead (DFN) 2mm x 2mm x 0.75mm plastic surface-mount package, and is qualified per MIL‑PRF‑38534 Class K...
Categories: Новини світу мікро- та наноелектроніки
Phlux shipping 1550nm InGaAs APDs in volume as export orders drive demand
Phlux Technology (which was spun out of the UK’s Sheffield University in December 2022) has won a six-figure (GBP)-value export contract and is now shipping production quantities of its 1550nm indium gallium arsenide (InGaAs) avalanche photodiode (APD) infrared sensors...
Categories: Новини світу мікро- та наноелектроніки
Vishay completes acquisition of Nexperia’s Newport Wafer Fab following UK Government approval
Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has completed its acquisition of the wafer fabrication facility and operations in Newport, South Wales, UK of Netherlands-based Nexperia B.V. for about $177m in cash on hand (net of cash acquired)...
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Wolfspeed launches New York Semiconductor Registered Apprenticeship Program with support from National Institute of Innovation and Technology
The National Institute for Innovation and Technology (NIIT) and the United States Department of Labor (USDOL) has applauded Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — for the establishment of its New York Registered Apprenticeship Program (RAP). As part of its role in the USA’s semiconductor talent pipeline development, the Institute serves as the USDOL’s national Intermediary responsible for expanding Registered Apprenticeships (RAs) throughout the semiconductor and nanotechnology industry supply chains...
Categories: Новини світу мікро- та наноелектроніки
Infineon launches CoolSiC MOSFET Generation 2
Infineon Technologies AG of Munich, Germany has introduced its next generation of silicon carbide (SiC) MOSFET trench technology. The new CoolSiC MOSFET 650V and 1200V Generation 2 is said to improve MOSFET key performance figures such as stored energies and charges by up to 20% compared with the prior generation without compromising quality and reliability levels, leading to higher overall energy efficiency...
Categories: Новини світу мікро- та наноелектроніки
New Asian customer orders automated Riber MBE 412 system
Riber S.A. of Bezons, France — which makes molecular beam epitaxy (MBE) systems as well as evaporation sources — has received a multi-million Euro order from a new customer in Asia for an automated MBE 412 system in order to strengthen its fundamental and advanced nitride research capabilities...
Categories: Новини світу мікро- та наноелектроніки
Luminus expands range of Gen 2 CCT tunable COBs
Luminus Devices Inc of Sunnyvale, CA, USA – which designs and makes LEDs and solid-state technology (SST) light sources for illumination markets – has expanded its Gen 2 CCT tunable chip-on-board (COB) LED portfolio with the introduction of the CTM-18 and CTM-22. Both feature the same 6500K to 2700K color combination of the exiting CTM-6, CTM-9 and CTM-14, along with two additional CCT (correlated color temperature) ranges: 4000K to 1800K and high-melanopic 5000K Salud to 2200K...
Categories: Новини світу мікро- та наноелектроніки