Fundamentals of nanoelectronics

The goal of a course: formation of the basics knowledge on physical fundamentals and processes, directions of progress, principles and methods of the modern nanoelectronics, physical properties and technology of the systems with reduced dimensions: semiconductor structure with 2-dimentional electron gas, quantum wires and dots, quantum-sized and ballistic effects, which are observed in such systems.
Physical fundamentals of nanoelectronics:

1. Quantum fundamentals of nanoelectronics, effects of dimentional quantization. Typical models of quantum mechanics.
2. Heterogeneous solid structure: types and parameters of heterostructures. Band engineering.
3. Solid-state structure with reduced dimensions. Density distribution of k- and E- states in three-, one- and zero-dimensional quantum structures. Occupation of the states by charge carriers. Electrons states in superlattices. Features of phonon spectrum in the structures with reduced dimension.
4. Electron transport in nanostructures. Scattering mechanisms and mobility in the structures with reduced dimensions. Transversal and longitudinal transport in quantum-sized layers and wires. Resonant tunneling phenomena. Overshoot of drift velocity, ballistic carrier transport. Electronic properties of superlattices.
5. Effect of one-electron tunneling. Principle of Coulomb blockade.
6. Quantum Hole effect.

Methods of nanoelectronics structures’ composition:

1. Introduction to nanothechnologies, main idea of nanotechnologies, “top-down” and “bottom-up” approaches.
2. Methods of film’s deposition. Chemical gas phase deposition. Molecular beam epitaxy, molecular assembly from gas phase. Other methods of deposition of nano-films: liquid phase epitaxy, laser evaporation, usage of ion beams.
3. Methods, based upon application of scanning probes. Physical fundamentals of scanning probe microscopy. Scanning tunneling microscope. Atomic force microscope, magnetic-force microscopy, optical microscopy.
4. Nanolithography. Limits of optical lithography. Modern UV lithography. Extreme UV lithography. Electron-beam lithography. Nanoimprint. Pen nanolithography.
5. Self-regulating processes. Supramolecular chemistry. Self-organization. Nanocristalline in non-organic and organic materials. Sol gel technique. Self-organization for epitaxy. Deposition of Langmuir-Blodgett films.

Nonomaterials and nanostructures:

1. Nanomaterials. Formation of nanostructured materials. Criteria of definition of nanomaterials” size, dimensional and operational properties. Classification of nanomaterials and nanostructures: nanocrystals, nanoclasters, zero-dimensional, linear, two-dimensional and three-dimensional nanostructures. Nanostructured materials. Fractal nanostructures. Aerogels.
2. Porous silicon: obtaining, energy diagram, properties, application. Porous aluminum oxide: obtaining and nanostructures, based on it. Application of nonporous oxides.
3. Structure, based on carbon: graphene, fullerenes, fullerite, nanotubes. Obtaining, properties and application of graphene. Classification, composition, obtaining and application of carbon nanotubes. Manufacturing and application of nanotubes from other semiconductor materials.

Electronic properties of nanostructures:

1. Submicron field-effect transistors, appearance of quantum dimensional effects.
2. Structures with transverse electron transport. Superlattices.
3. Resonant-tunneling structures, their properties, modeling, application in EHF-technique.
4. Carbon nanostructures: graphene structures, transistor structures, based on carbon nanotubes, nonhomogeneous nanotubes, transmission lines, antennas and other components based on nanotubes, transistor nanosensors.
5. Interference phenomena: on magneto- and electrostatics Aharonov–Bohm effect, T-transistor on quantum dots, transistor of benzene molecule, photonic key.
6. Single-electron structure: single-electron tunneling, conductivity of ballistic contact, quanta of conductivity, double-barrier single-electron structure, single-electron transistor.
7. Spintrone structures. Principles of composition and types of spin electron transistor structures. Integral logical memory elements and memory elements, based on spin transistor.
8. Molecular nanoelectronics structures.