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Market research firm TrendForce reports that the silicon carbide (SiC) power device industry maintained strong growth in 2023, driven by the application of battery electric vehicles (BEVs). The top five suppliers accounted for about 91.9% of total revenue: Europe-based STMicroelectronics led the pack with 32.6% market share, while US-based onsemi rose from fourth place in 2022 to second place in 2023...

According to the latest ‘Mini-LED Backlight Market Tracker’ from market research firm Omdia, LCD TV displays equipped with a mini-LED backlight unit will reach 6.2 million units in 2024, while Samsung Display and LG Display will produce 6.8 million units of OLED TV displays (including both WOLED and QD OLED TV variants). However, by 2025 the mini-LED backlight TVs are forecasted to reach 9.3 million units, surpassing the 7.5 million units of OLED TVs for the first time...

Murata company pSemi Corp of San Diego, CA, USA has launched the PE42447 high-power, high-linearity single-pole four-throw (SP4T) RF switch, manufactured using the firm’s silicon-on-insulator (SOI) technology, now supporting frequency ranges spanning 10MHz to 8GHz. The switch delivers extremely low insertion loss and high linearity with high input power handling capability, making it suitable for hybrid beam-forming in wireless infrastructure as well as other applications in broad markets that requires such performance...

Murata company pSemi Corp of San Diego, CA, USA — a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) — has launched the PE42548 high-performance single-pole four-throw (SP4T) RF switch, providing a suitable alternative to traditional flip-chip solutions. Designed to accelerate time-to-market, the PE42548 meets the increasing demand for contract manufacturing (CM)-friendly RF solutions, particularly in test and measurement (T&M) applications...

UK-based CML Microsystems Plc, a designer and fabless manufacturer of mixed-signal, RF and microwave semiconductors for wireless communications applications, has launched a Ka-band gallium nitride (GaN) power amplifier that is said to be a cost-effective building block for commercial high-volume satellite communication terminals...

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — is sampling the GRF2113, a next-generation variant of its GRF2013 gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) amplifier core. The gain of this new variant surpasses that of its predecessor by up to 3.5dB, providing extra headroom in wireless infrastructure receive and transmit setups where marginal cascaded gain is a concern...

In a strategic move addressing what it describes as unprecedented demand for power semiconductors that can optimize energy conversion and management, onsemi of Scottsdale, AZ, USA plans to establish a vertically integrated silicon carbide (SiC) manufacturing facility in the Czech Republic. The site would produce the firm’s intelligent power semiconductors for improving the energy efficiency of power electronics in electric vehicles, renewable energy and artificial intelligence (AI) data centers...

CrayoNano AS of Trondheim, Norway — which develops and manufactures semiconductor components based on patented and proprietary nanomaterials technology — has expanded its European footprint with a new design-in partnership agreement with Turkey-based Gesan Aydınlatma VE Elektronik Ltd Şti, which designs, manufactures and sells LED lighting systems and solutions for water and surface disinfection for agriculture and horticulture, under its brand DEMİRLED. Gesan Aydınlatma has designed CrayoNano’s UV-C LEDs into its products and systems for the disinfection of fungi, bacteria and other micro-organisms that are harmful to plants...

Ultraviolet LED product maker Seoul Viosys Co Ltd (SVC, a subsidiary of South Korean LED maker Seoul Semiconductor Co Ltd) has filed a patent infringement lawsuit in the US District Court for the Central District of California against California-based home lighting company Feit Electronic Company Inc...

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched three new highly integrated RF multi-chip modules (MCMs) designed for advanced radar applications. The new modules leverage Qorvo’s packaging and process technology to deliver the compact size and what is claimed to be the superior performance, lower noise and reduced power consumption needed for modern phased-array and multi-function radar systems...

Chicago-based fabless firm Tagore Technology Inc - which was founded in 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) and gallium nitride-on-silicon carbide (GaN-on-SiC) technology for RF and power management applications — has introduced the TS8728N and TS8729N asymmetrical reflective single-pole double-throw (SPDT) switches designed for broadband, high-power switching applications. The new feature-rich switches offer what is claimed to be best-in-class insertion loss, power handling, high linearity, and high isolation performance and are well suited for L- and S-band radar and cellular infrastructure applications...

Chennai-based SiCSem Private Limited (which was incorporated at the end of 2023) and the Indian Institute of Technology Bhubaneswar (IIT-BBS) has signed a memorandum of agreement to collaborate on research on compound semiconductors...

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched three monolithic microwave integrated circuit (MMIC) power amplifiers designed specifically for Ku-band satellite communications (SATCOM) terminals...

WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — has announced the beta release of its PP10-29 moisture rugged 0.1µm pseudomorphic high-electron-mobility transistor (pHEMT) technology...

As part of its TRCDRIVE pack series, Japan-based ROHM has developed four models with 2-in-1 silicon carbide (SiC) molded modules (two 750V-rated: BSTxxxD08P4A1x4, two 1200V-rated: BSTxxxD12P4A1x1) optimized for xEV (electric vehicles) traction inverters. The TRCDRIVE pack supports up to 300kW and features high power density and a unique terminal configuration, helping to solve the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours...

At Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg (11–13 June), Fraunhofer Institute for Applied Solid State Physics (IAF) of Freiburg, Germany presented the current state of its development of novel technologies for lateral and vertical gallium nitride (GaN) transistors with blocking voltages above 1200V...

NYSE American LLC says that the staff of NYSE Regulation has begun delisting the common stock of high-power industrial blue laser maker NUBURU Inc of Centennial, CO, USA (which was founded in 2015) from the NYSE American stock exchange. Trading in the firm’s common stock has been suspended...

WIN Semiconductors Corp of Taoyuan City, Taiwan – which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructur and networking markets – has expanded its portfolio of RF GaN technologies with the beta release of its highly robust NP12-0B millimeter-wave (mmWave) gallium nitride on silicon carbide (GaN-on-SiC) technology...

Kymera International of Research Triangle Park, NC, USA (which develops and manufactures specialty materials and high-performance surface coatings) has signed an agreement to acquire Fiven ASA of Oslo, Norway from Los Angeles-based global private equity firm OpenGate Capital, which acquired Fiven in 2019 through a corporate carve-out from Saint-Gobain...

On 1 July, Tokyo-based Mitsubishi Electric Corp will begin sampling 8W and 14W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers, shipped as customer-board-friendly bare chips, suitable for use in emergency communications and Ka-band multi-carrier satellite-communication (SATCOM) earth stations...