Semiconductor today

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has formally released the GRF0020D and GRF0030D, the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company...

Multi-national industrial and energy company METLEN Energy & Metals of Athens, Greece – which operates the only vertically integrated bauxite, alumina and primary aluminium production unit in the European Union (EU) with privately owned port facilities – says that the Metallurgy Committee, in a joint session with the Capital Allocation Committee, has made the final investment decision (FID) to proceed with implementing a new €295.5m plan for the production of bauxite, alumina and gallium...

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including GlobalFoundries and the State of Vermont — has been awarded $23.7m in federal funding from the US Economic Development Administration (EDA)...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has completed the offering of shares of its common stock under its previously announced ‘at the market’ (ATM) offering program pursuant to a shelf registration statement filed with the US Securities and Exchange Commission and a prospectus supplement dated 9 December...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has completed its acquisition of the silicon carbide junction field-effect transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, of Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) for $115m in cash...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91200, a fully configured motor drive inverter reference design that is said to deliver exceptional performance and flexibility for a variety of industrial and battery-powered applications...

MACOM Technology Solutions Inc of Lowell, MA, USA (which designs and makes RF, microwave, analog and mixed-signal and optical semiconductor technologies) has announced a long-term capital investment plan comprising up to $345m over five years to modernize its wafer fabrication facilities in Lowell, Massachusetts, and Durham, North Carolina, creating up to 350 manufacturing jobs and nearly 60 construction jobs across both states...

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has revised its guidance for fourth-quarter 2024 revenue from $165–185m (forecasted in early November) to $175–185m (growing from $173.9m a year ago)...

Shandong University has reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition [Siheng Chen et al, IEEE Electron Device Letters, vol. 45, no. 12, pp2343–2346, December 2024, doi: 10.1109/LED.2024.3478819]. Compared with traditional devices, the device presented increased threshold voltage significantly from 1.8V to 7.1V, with improved gate breakdown voltage and off-state breakdown voltage of 26.9V and 1980V, respectively...

Sivers Semiconductors AB of Kista, Sweden (which supplies RF beam-former ICs for SATCOMs and photonic lasers for AI data centers) has signed contracts for both the electronic warfare and 5G/6G chip development awards with the Northeast Microelectronics Coalition (NEMC) Hub through the US CHIPS and Science Act. Funding is provided under the Microelectronics Commons program, executed through the Naval Surface Warfare Center (NSWC) Crane Division and the National Security Technology Accelerator (NSTXL)...

Shipments of micro light-emitting diode (LED) displays will surge to 34.6 million units by 2031, according to the ‘Micro LED Display Market Tracker – 4Q 2024’ of market research firm Omdia. However, despite this growth, micro LED displays are expected to account for just 0.9% of the total display market, as the technology remains competitive only in select applications over the forecast period...

At Photonics West 2025 in the Moscone Center, San Francisco (25–30 January), micro/nanotechnology R&D center CEA-Leti of Grenoble, France is presenting six papers (including an invited paper) detailing its recent breakthroughs and results for photonics-based applications...

For its fiscal first-quarter 2025 (to end-November 2024), LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has reported revenue of $1.261m, down from $1.324 last quarter and $1.65m a year ago...

Micro-LED technology firm VueReal Inc of Waterloo, ON, Canada has appointed Giuseppe Buscemi as VP of semiconductor engineering. The firm reckons that, due to his extensive experience in semiconductor production facilities and deep knowledge of micro-LED technology, he will be pivotal in scaling its cartridge production capabilities to meet growing demand...

Plessey Semiconductors Ltd of Plymouth, UK — which develops embedded micro-LED technology for augmented-reality and mixed-reality (AR/MR) display applications — and Meta Platforms Inc have developed what is claimed to be the brightest red micro-LED display suitable for AR glasses. Offering up to 6,000,000nits at high resolution (<5μm) with ultra-low power consumption, it is reckoned to overcome critical technical challenges, helping to pave the way for the next computing platform...

Teledyne HiRel Semiconductors of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) has announced the availability of its model TDSW84230EP gallium nitride (GaN) high-power RF switch. Optimized for aerospace & defense applications, it offers high peak power and is designed to replace positive-intrinsic-negative (PIN) diode-based RF switches commonly used in RF front ends of tactical and military communication radio systems...

Nanoelectronics research center imec of Leuven, Belgium has demonstrated electrically driven gallium arsenide (GaAs)-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5mA and output powers exceeding 1mW, the results are said to demonstrate the potential of direct epitaxial growth of high-quality III-V materials on silicon (‘GaAs nano-ridge laser diodes fully fabricated in a 300mm CMOS pilot line’, Yannick De Koninck et al, Nature, volume 637, pages 63–69 (2025)). imec reckons that this provides a pathway to the development of cost-effective, high-performance optical devices for applications in data communications, machine learning and artificial intelligence...

Molecular beam epitaxy (MBE) system maker Riber S.A. of Bezons, France says that long-standing US-based customer Teledyne Imaging Sensors (TIS) has placed a repeat order for an MBE 412 cluster research system (for delivery in 2025) to expand its production capacity and fulfill additional contracts for manufacturing new high-performance infrared devices...

ROHM has developed the RLD8BQAB3 high-output laser diode for use in ADAS (Advanced Driver Assistance Systems) equipped with LiDAR for distance measurement and spatial recognition. In addition to automotive applications, the firm is also initially supplying samples targeting consumer applications (drones, robot vacuums, golf rangefinders) and industrial applications (AGVs, service robots, and 3D monitoring systems such as sensors for human/object detection)...

At the Consumer Electronics Show (CES 2025) in Las Vegas (7–11 January), Aledia S.A of Echirolles, near Grenoble, France (a developer and manufacturer of 3D micro-LEDs for display applications based on its large-area gallium nitride nanowires-on-silicon platform) has announced the availability of its micro-LED technology for augmented reality applications and next-generation displays for vision applications...