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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity
Updated: 26 min 4 sec ago
Navitas showcasing advances in GaN and SiC technologies at PCIM, including first production-released 650V bi-directional GaNFast ICs
In booth #544 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is exhibiting several GaN and SiC breakthroughs in AI data centers, electric vehicles (EVs), motor drives, and industrial applications...
Categories: Новини світу мікро- та наноелектроніки
Infineon showcasing power device solutions at PCIM
In booth #470 (hall 7) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), Infineon Technologies AG of Munich, Germany is showcasing its latest semiconductor, software and tooling solutions that can help to solve green and digital transformation challenges. Highlights from its power device portfolio span all relevant power technologies including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Infineon is giving demonstrations and presentations as well as the opportunity to talk to its experts...
Categories: Новини світу мікро- та наноелектроніки
EPC launches laser driver evaluation board for indirect time-of-flight applications
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91116, a high-speed, high-current laser driver evaluation board tailored for indirect time-of-flight (iToF) applications in automotive and industrial sensing. Built around the AEC-Q101-qualified EPC2203 eGaN FET, the EPC91116 delivers nanosecond-scale performance with a flexible, low-cost architecture that simplifies prototyping and accelerates time to market...
Categories: Новини світу мікро- та наноелектроніки
OIF releases 800LR Implementation Agreement defining single-wavelength 800G coherent line interface
As demand grows for scalable, energy-efficient, high-capacity connectivity in short-reach environments, Optical Internetworking Forum (OIF) has released the 800LR Implementation Agreement (IA) defining a single-wavelength 800G coherent line interface...
Categories: Новини світу мікро- та наноелектроніки
NUBURU secures funding to eliminate $3.4m in outstanding accounts payables
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — has announced a strategic update that, it says, underscores its commitment to advancing into high-growth markets. It has also secured funding partners to address up to about $3.4m in accounts payables left from previous management, enabling NUBURU to eliminate past debts and enhance its financial flexibility...
Categories: Новини світу мікро- та наноелектроніки
Lumentum earns EcoVadis Platinum Medal for third consecutive year
Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes optical and photonic products for optical networks and lasers for industrial and consumer markets) has earned the EcoVadis Platinum Medal for a third consecutive year — representing the highest level of recognition for sustainability performance, and reflecting its “culture of continuous improvement and accountability in our approach to sustainability,” says Misha Rozenberg, executive VP & chief operations and quality officer...
Categories: Новини світу мікро- та наноелектроніки
Navitas’ new 1200V SiCPAK power modules enable high reliability and efficient high-temperature performance
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has released its latest SiCPAK power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include electric vehicle (EV) DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating...
Categories: Новини світу мікро- та наноелектроніки
ROHM highlighting e-mobility and industrial applications at PCIM 2025
At booth 304 (hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), ROHM is showcasing reference projects with partners and presenting the evolution of its package designs and evaluation boards. Highlights include the following...
Categories: Новини світу мікро- та наноелектроніки
UIUC reports record switching performance in intrinsic diamond photoconductive semiconductor switches
Professor Can Bayram and his colleagues at University of Illinois at Urbana-Champaign (UIUC) in the USA have reported diamond photoconductive semiconductor switches (PCSS) with record-breaking voltage/current handling and slew rates, efficiency and reliability simultaneously (Z. Han et al, ‘Record Performance in Intrinsic, Impurity-Free Lateral Diamond Photoconductive Semiconductor Switches’ Appl. Phys. Lett. 126, 152105 (2025)...
Categories: Новини світу мікро- та наноелектроніки
CSA Catapult’s head of advanced packaging technology appointed visiting professor at UK’s universities of Bristol and Strathclyde
Compound Semiconductor Applications (CSA) Catapult says that Dr Jayakrishnan (Jay) Chandrappan, its head of technology – advanced packaging, has been appointed visiting industrial professor at the University of Bristol and visiting professor at the University of Strathclyde...
Categories: Новини світу мікро- та наноелектроніки
Polar to license Renesas’ GaN-on-Si technology and onshore commercial fabrication of 650V-class devices on 200mm wafers
Polar Semiconductor of Bloomington, MN, USA (the only US-owned merchant foundry specializing in sensor, power and high-voltage semiconductors) has finalized a strategic agreement with Renesas Electronics Corp of Tokyo, Japan to license its gallium nitride-on-silicon (GaN-on-Si) D-mode technology...
Categories: Новини світу мікро- та наноелектроніки
SEMI Silicon Photonics Industry Alliance launches three Special Interest Groups to set out technology roadmap
The SEMI Silicon Photonics Industry Alliance (SiPhIA) has held the ‘Bridging Light & Silicon: SEMI SiPhIA SIGs Kick-off & Seminar’, announcing the official launch of three Special Interest Groups (SIGs) aimed at integrating expertise from various sectors to formulate industry standards and accelerate technological innovation and commercialization. K.C. Hsu, vice president of TSMC, and Dr C.P. Hung, vice president of ASE, attended as co-chairs of SEMI SiPhIA and delivered speeches to guide the SIGs. The seminar gathered over 200 industry leaders and experts to discuss the development of silicon photonics technology and the layout of the global supply chain...
Categories: Новини світу мікро- та наноелектроніки
Navitas gains automotive qualification of high-power GaNSafe ICs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced that its high-power GaNSafe ICs have achieved automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s next inflection into the automotive market, it is reckoned...
Categories: Новини світу мікро- та наноелектроніки
Diodes Inc adds 650V SiC Schottky diodes with low figure-of-merit
Power semiconductor product supplier Diodes Inc of Plano, TX, USA has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC-to-DC and AC-to-DC conversion, renewable energy, data centers (especially those that process heavy artificial intelligence (AI) workloads), and industrial motor drives...
Categories: Новини світу мікро- та наноелектроніки
NUBURU announces strategic corporate update focused on defense & security, advanced technologies, and growth initiatives
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — is to provide a comprehensive update to its shareholders regarding its newly formulated business model canvas, which encompasses two synergistic key business lines...
Categories: Новини світу мікро- та наноелектроніки
ST reshaping manufacturing footprint to invest in 300mm silicon, 200mm SiC, and technology R&D
As part of the program announced in October 2024, STMicroelectronics of Geneva, Switzerland has disclosed further plans to reshape its global manufacturing footprint that will “future proof our integrated device manufacturer model with strategic assets in Europe and improve our ability to innovate even faster,” according to president & CEO Jean-Marc Chery...
Categories: Новини світу мікро- та наноелектроніки
Mitsubishi Electric to ship samples of full-SiC and hybrid-SiC SLIMDIP modules
On 22 April, Tokyo-based Mitsubishi Electric Corp will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances...
Categories: Новини світу мікро- та наноелектроніки
ams OSRAM launches 20% brighter 1.2mm x 1.0mm x 0.6mm Chip LED delivering 14mW
With the measurement of heart rate in wearable devices continuing to be refined for even greater precision, ams OSRAM AG of Premstaetten, Austria and Munich, Germany has introduced a new miniaturized Chip LED featuring a powerful 500µm chip that delivers enhanced signal quality. Despite measuring just 1.2mm x 1.0mm x 0.6mm, the ultra-compact LED still delivers light output of 14mW...
Categories: Новини світу мікро- та наноелектроніки
Qorvo appoints two independent directors as David H. Y. Ho retires from board
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has appointed Richard L. Clemmer and Christopher R. Koopmans as new independent members of its board of directors...
Categories: Новини світу мікро- та наноелектроніки
POET broadens customer engagements following product showcase at OFC
POET Technologies Inc of Toronto, Ontario, Canada — designer and developer of the POET Optical Interposer, photonic integrated circuits (PICs) and light sources for the hyperscale data-center, telecom and artificial intelligence (AI) markets — has announced significant new customer engagement in response to live demonstrations of the Teralight line of 1.6T transmit and receive optical engines at the 2025 Optical Fiber Communications (OFC) Conference in San Francisco, CA, USA (1–3 April)...
Categories: Новини світу мікро- та наноелектроніки