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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity
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ROHM and UAES sign long-term supply agreement for SiC power devices
Japan-based power semiconductor device maker ROHM Semiconductor and China’s largest tier-1 automotive supplier United Automotive Electronic Systems Co Ltd (UAES, a joint venture established in 1995 by China’s Zhonglian Automotive Electronics Co Ltd and Germany’s Robert Bosch GmbH) have entered into a long-term supply agreement for SiC power devices...
Categories: Новини світу мікро- та наноелектроніки
Shin-Etsu Chemical to develop QST substrate for 300mm GaN
Tokyo-based Shin-Etsu Chemical Co Ltd has created a 300mm (12-inch) QST substrate, and recently started supplying samples...
Categories: Новини світу мікро- та наноелектроніки
Applied Ventures and ITIC-Taiwan join Wise-integration’s Series B funding round
Fabless company Wise-integration of Hyeres, France — which was spun off from CEA-Leti in 2020 and designs and develops gallium nitride (GaN) integrated circuits and digital-control technologies for power supplies — says that the investment fund Applied Ventures-ITIC Innovation Fund (AVITIC) has joined its Series B funding round...
Categories: Новини світу мікро- та наноелектроніки
NUBURU partners with Ohio State’s CDME to showcase blue lasers in additive manufacturing
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — has announced a partnership with the Center for Design and Manufacturing Excellence (CDME) at Ohio State University in Columbus, Ohio. The firm received a purchase order for its BlueScan solution, which includes a BL-250 laser, scanner and optics. This technology will be installed within a powder bed fusion system at CDME’s development lab...
Categories: Новини світу мікро- та наноелектроніки
Navitas Gen-3 Fast SiC MOSFETs in D2PAK-7L and TOLL surface-mount packages
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has released a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages...
Categories: Новини світу мікро- та наноелектроніки
Japan’s NCT gains NEDO funding for project to develop β- Ga2O3 wafers, power devices and power modules
Novel Crystal Technology Inc (NCT) of Saitama, Japan, which develops and sells gallium oxide wafers, says that an R&D project related to beta-phase gallium oxide (β- Ga2O3) was adopted by Japan’s New Energy and Industrial Technology Development Organization (NEDO). The project ‘Development of Material Technology for High-Output and High-Efficiency Power Devices/High-Frequency Devices’ is part of the ‘Key and Advanced Technology R&D through Cross Community Collaboration Program’ (K Program) promoted by Japan’s Cabinet Office (CAO), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), and the Ministry of Economy, Trade and Industry (METI)...
Categories: Новини світу мікро- та наноелектроніки
Element Six to lead US DARPA-funded Ultra-Wide BandGap Semiconductors program
Chemical vapor deposition (CVD)-based synthetic diamond materials firm Element Six of Oxford, UK (E6, part of the De Beers Group) is leading a program under the UWBGS (Ultra-Wide BandGap Semiconductors) initiative, established by the United States Defense Advanced Research Projects Agency (DARPA), to enable the next generation of semiconductor technologies...
Categories: Новини світу мікро- та наноелектроніки
Wolfspeed accelerating shift of device fabrication to 200mm Mohawk Valley Fab, while mulling closure of 150mm Durham device fab
For its fiscal full year (to end-June), Wolfspeed Inc of Durham, NC, USA – which makes silicon carbide materials as well as silicon carbide (SiC) and gallium nitride (GaN) power-switching & RF semiconductor devices – has reported annual revenue growth of 6.4%, from $758.5m in fiscal 2023 to $807.2m for fiscal 2024. Specifically, Materials Products revenue rose by 12.1% from $349.3m to $391.6m, and Power Products revenue by 1.6% from $409.2m to $415.6m...
Categories: Новини світу мікро- та наноелектроніки
Phlux appoints VP of operations, director of engineering, and VP of marketing
Following its recent relocation to larger premises (supporting ongoing growth and expanding operations), Sheffield University spin-off Phlux Technology —which designs and manufactures 1550nm avalanche photodiode (APD) infrared sensors — has appointed Christian Rookes as VP of marketing, Brian Williams as VP of operations, and John Fuller as director of engineering...
Categories: Новини світу мікро- та наноелектроніки
Lumileds addresses micro-LED efficiency through EQE and directionality
LED product and lighting maker Lumileds LLC of San Jose, CA, USA says that, in the past few years, it has realized significant external quantum efficiency (EQE) performance for micro-LEDs. However, for micro-LEDs, and display applications in particular, EQE on its own is not a sufficient measure of performance...
Categories: Новини світу мікро- та наноелектроніки
Finwave and GlobalFoundries agree technology development and licensing deal
Finwave Semiconductor Inc of Waltham, MA, USA has announced a strategic technology development and licensing agreement with GlobalFoundries (GF) of Malta, NY, USA...
Categories: Новини світу мікро- та наноелектроніки
Latest issue of Semiconductor Today now available
For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine...
Categories: Новини світу мікро- та наноелектроніки
Cornell and Lit Thinking working on DARPA-funded project to develop AlN-based PiN diodes with low on-state resistance
Aided by a grant from the US Defense Advanced Research Projects Agency (DARPA), researchers at Cornell University – in collaboration with Lit Thinking of Orlando, FL, US – are working to overcome some of the key technical challenges that have limited the widespread adoption of aluminium nitride (AlN) as a next-generation semiconductor material...
Categories: Новини світу мікро- та наноелектроніки
ROHM’s fourth-generation SiC MOSFET chips adopted in three Geely ZEEKR EV models
Japan-based power semiconductor device maker ROHM Co Ltd says that power modules equipped with 4th-generation silicon carbide (SiC) MOSFET bare chips have been adopted for the traction inverters in three models of the ZEEKR electric vehicle (EV) brand of China’s Zhejiang Geely Holding Group. Since 2023, these power modules have been mass produced and shipped from HAIMOSIC (SHANGHAI) Co Ltd – a joint venture between ROHM and Zhenghai Group Co Ltd – to Viridi E-Mobility Technology (Ningbo) Co Ltd, a tier-1 manufacturer under Geely...
Categories: Новини світу мікро- та наноелектроніки
EPC Space unveils dynamic cross-reference tool for rad-hard MOSFET device replacement
EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon transistors and ICs for power management in space and other harsh environments) has launched the Cross Reference Tool. Designed to streamline the search and replacement process for rad-hard MOSFET devices up to 350V, the tool makes it easier for users to find and replace any competitor’s rad-hard MOSFET device by simply typing in the part number...
Categories: Новини світу мікро- та наноелектроніки
Coherent unveils CW DFB InP lasers for silicon photonics transceivers
Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA has launched new family of high-efficiency continuous wave (CW) distributed feedback (DFB) lasers specifically engineered for silicon photonics transceiver modules...
Categories: Новини світу мікро- та наноелектроніки
Wise-integration forms Hong Kong-based subsidiary to manage Asian business development
During the PCIM Asia 2024 conference in Shenzhen, China (28–30 August), fabless company Wise-integration of Hyeres, France (which was spun off from CEA-Leti in 2020) has launched the subsidiary Wise-integration Ltd — based in the Hong Kong Science and Technology Park (HKSTP) and led by James Ho as China business development director — to accelerate its growing business in China...
Categories: Новини світу мікро- та наноелектроніки
Baylin receives CDN$2.25m order from satellite broadcaster and services provider
Toronto-based Baylin Technologies Inc says that its subsidiary Advantech Wireless Technologies Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave broadband communications systems) says that a “a major sports and entertainment satellite broadcaster and services provider” has placed orders totalling $2.25m for its C-band and Ku-band solid-state power block (SSPB) amplifiers...
Categories: Новини світу мікро- та наноелектроніки
AlixLabs awarded research grant from imec-led, EU-supported PhotonHub Europe
AlixLabs AB of Lund, Sweden — which was spun off from Lund University in 2019 and has developed the Atomic Layer Etching (ALE) Pitch Splitting technology (APS) — is expanding into the photonics field thanks to a new research grant from imec-led and EU-supported PhotonHub Europe. The total value of the research project is about €197,000, of which PhotonHub will provide €58,500, with AlixLabs itself investing €129,000...
Categories: Новини світу мікро- та наноелектроніки
onsemi releases upgraded power modules to boost solar power generation and energy storage
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has released its newest-generation silicon and silicon carbide (SiC) hybrid power integrated modules (PIMs) in an F5BP package, suited to boosting the power output of utility-scale solar string inverters or energy storage system (ESS) applications...
Categories: Новини світу мікро- та наноелектроніки