Semiconductor today

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA and China-based Innoscience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 200mm silicon wafers — have signed a non-binding memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40–200V, and significantly broaden customer adoption...

Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced the sample availability of its new 3300V and 2300V ultrahigh-voltage (UHV) products in power module, discrete and known good die (KGD) formats. The new SiC products are claimed to set a benchmark for reliability and enhanced performance in ultrahigh-voltage power electronics...

NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and developed and previously manufactured high-power industrial blue lasers — has signed binding heads of terms to acquire Lyocon S.r.l., an Italian laser-engineering and photonics company specializing in advanced laser sources, precision optical systems, and customized laser platforms for industrial, medical and high-reliability applications...

At SuperCompute 2025 (SC25) in St Louis, MO, USA (16–21 November), Avicena Tech Corp of Sunnyvale, CA, USA has announced that its LightBundle micro-LED-based optical links now operate at 4Gbps per lane with transmitter currents as low as 100µA per LED. At this current, each link closes at a raw bit-error rate (BER) of 1x10–12 with an equivalent energy of 80fJ/bit per LED, all without forward error correction (FEC)...

For fiscal fourth-quarter 2025 to end-August), LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has reported revenue of $13.22m, down on $17.65m last quarter. Nevertheless, fiscal full-year revenue has grown more than eight-fold from $5.18m for 2024 to $43m for 2025...

Infineon Technologies AG of Munich, Germany has expanded its collaboration with Anker Innovations of Changsha, Hunan, China (a manufacturer of fast-charging power devices) to develop a new generation of high-speed chargers that can deliver up to 160W of power in a compact, pocket-size format. The result of the cooperation is said to be redefining industry standards for high power density and efficiency, represented by the launch of Anker’s 160W Prime Charger. The device features Infineon’s latest XDP digital controller and gallium nitride (GaN)-based CoolGaN transistor technology, enabling a credit-card-size design, which makes the charger suitable for travelers and professionals alike...

Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — and Asian distributor WT Microelectronics Co Ltd have strengthened their strategic partnership to provide enhanced technical and supply chain services in Asia...