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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity
Updated: 57 min 56 sec ago
Navitas adds TOLT package to GaNSafe family
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package...
Categories: Новини світу мікро- та наноелектроніки
PhotonDelta launches engineering contest to drive photonic chip applications
Photonic chips industry accelerator PhotonDelta of Eindhoven, the Netherlands (which connects and collaborates with an ecosystem of photonic chip technology organizations worldwide) is launching a global engineering contest in collaboration with engineering community and knowledge platform Wevolver to stimulate the creation of new applications for photonic chips that tackle global challenges...
Categories: Новини світу мікро- та наноелектроніки
Latest issue of Semiconductor Today now available
For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine...
Categories: Новини світу мікро- та наноелектроніки
QPT wins APC project grant to develop high-frequency GaN inverter demonstrator for automotive
Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has won a grant for the project VERDE to develop a high-frequency 400V/60kW GaN inverter demonstrator for automotive use that will help to demonstrate that GaN is now superior to silicon carbide (SiC) or silicon...
Categories: Новини світу мікро- та наноелектроніки
Keysight unveils 3kV high-voltage wafer test system for power semiconductors
Keysight Technologies Inc of Santa Rosa, CA, USA has expanded its semiconductor test portfolio by introducing the 4881HV high-voltage wafer test system, which is said to improve the productivity of power semiconductor manufacturers by enabling parametric tests up to 3kV supporting high- and low-voltage in one-pass test...
Categories: Новини світу мікро- та наноелектроніки
Lynred acquires SWIR imaging provider New Imaging Technologies
In a strategic move to consolidate its position in infrared sensors, Lynred of Grenoble, France, which designs and manufactures infrared (IR) sensors for aerospace, defense and commercial applications, has acquired Paris-based New Imaging Technologies, which designs and manufactures shortwave-infrared (SWIR) imaging sensors and modules based on indium gallium arsenide (InGaAs) focal plane arrays. Lynred’s product portfolio will expand to include high-definition large-array SWIR sensors in small pixel pitch, bolstering its product range across all wavelength bands (short to very longwave). The transaction is expected to close in fourth-quarter 2024 and is subject to customary conditions...
Categories: Новини світу мікро- та наноелектроніки
NUBURU secures strategic $65m funding program to accelerate commercialization
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — has announced a funding program of about $65m, comprising $15m of direct private investment in public equity (PIPE) and $50m equity line of credit, enabling it to accelerate commercialization with predictable access to capital...
Categories: Новини світу мікро- та наноелектроніки
Penn State and UCSB team gain three-year, $2m NSF Future of Semiconductors grant
The US National Science Foundation (NSF) has awarded a three-year, $2m Future of Semiconductors (FuSe2) grant to researchers at Penn State University and the University of California, Santa Barbara (UCSB) to develop wireless communications and sensing platforms through advanced chips and packaging...
Categories: Новини світу мікро- та наноелектроніки
UK project to facilitate secure quantum key distribution with high-performance OEM receiver modules
Backed by funding from Innovate UK (which provides funding and support for business innovation as part of UK Research and Innovation) under the ‘Scalable Quantum Network Technologies: Collaborative R&D’ program, the £1.5m MARCONI project on quantum key distribution (QKD) is developing and demonstrating high-fidelity modular and scalable receiver modules...
Categories: Новини світу мікро- та наноелектроніки
HyperLight raises $37m in Series B funding round to accelerate product development and meet demand
HyperLight Corp of Cambridge, MA, USA — which designs and manufactures photonic integrated circuits (PICs) based on its proprietary production-grade thin-film lithium niobate (TFLN) platform — has raised $37m in a Series B funding round led by Summit Partners and including existing investors Xora Innovation (a deep tech venture fund backed by Temasek) and Foothill Ventures. Summit Partners’ managing director & CEO Peter Chung joins HyperLight’s board of directors...
Categories: Новини світу мікро- та наноелектроніки
Polar Light partners with Finetech to connect pyramidal GaN micro-LEDs
For display applications, Polar Light Technologies (PLT) — which stems from research by founder professor Per-Olof Holtz and his team at Sweden’s Linköping University — has created novel gallium nitride (GaN) pyramidal micro-LEDs that are directly bonded to indium pads on a silicon chip. This new method, where LEDs are built from the bottom up, avoids the surface damage seen in traditional top-down methods, resulting in much better optical performance...
Categories: Новини світу мікро- та наноелектроніки
DARPA awards HexaTech AlN substrate development contract
HexaTech Inc of Morrisville, NC, USA (a subsidiary of Stanley Electric Co Ltd of Tokyo, Japan) has signed a multi-year contract with the US Defense Advanced Research Projects Agency (DARPA) as part of its recently announced Ultra-Wide Bandgap Semiconductors (UWBGS) program, which aims to develop foundational, high-quality materials necessary for realizing practical UWBG electronics and enabling UWBG applications...
Categories: Новини світу мікро- та наноелектроніки
Raytheon to develop ultra-wide-bandgap semiconductors for DARPA
US-based Raytheon (a business of aerospace & defense company RTX) has been awarded a three-year, two-phase contract from the United States Defense Advanced Research Projects Agency (DARPA) to develop foundational ultra-wide-bandgap semiconductors (UWBGS), based on diamond and aluminium nitride (AlN) technology, which allow increased power delivery and thermal management in sensors and other electronic applications...
Categories: Новини світу мікро- та наноелектроніки
NREL to design silicon carbide-based power inverters for US ground combat vehicles
To transform US military ground combat vehicles, the US National Renewable Energy Laboratory (NREL) has been selected to redesign a critical component: the traction inverter, which controls the flow of electricity between a vehicle’s battery, motor and drivetrain. The new silicon carbide (SiC)-based propulsion system will double the range of Army vehicles with a footprint four times smaller than its predecessors...
Categories: Новини світу мікро- та наноелектроніки
BluGlass partners with Macquarie University and Aurizn on blue ocean subsurface temperature and depth mapping LiDAR project
BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has signed an agreement with Macquarie University (project lead) and defence company Aurizn to develop and test a new laser-based method to measure subsurface water temperature and depth. BluGlass will provide visible GaN lasers, partially funded by an Australia's Economic Accelerator (AEA) seed grant to support the commercialization of visible lasers in maritime applications...
Categories: Новини світу мікро- та наноелектроніки
Innovate UK details 16 projects receiving £11.5m of funding
Innovate UK (part of UK Research and Innovation) has issued details of the 16 projects that are to share £11.5m of funding as part of a collaborative R&D drive...
Categories: Новини світу мікро- та наноелектроніки
DENSO and ROHM consider strategic partnership on automotive semiconductors
Automotive supplier DENSO Corp of Kariya, Aichi prefecture, Japan and Japan-based power semiconductor device maker ROHM Co Ltd have agreed to begin considering establishing a strategic partnership on semiconductors...
Categories: Новини світу мікро- та наноелектроніки
Lumileds’ new LUXEON 5050 HE Plus LEDs delivers 199lm/W for outdoor and industrial lighting
With efficiency and energy sustainability being key drivers of LED selection for industrial and outdoor lighting applications, LED product and lighting maker Lumileds LLC of San Jose, CA, USA says that its new LUXEON 5050 HE Plus can deliver luminous efficacy of 199lm/W and luminous flux of 746lm, as well as reducing application power consumption by 18% or more in critical infrastructure applications common to cities and businesses around the world. Further, the lower energy consumption of the LUXEON 5050 HE Plus supports the transition to low-carbon or no-carbon electricity supply. OEMs can achieve greater sustainability in their manufacturing process by reducing the physical material in both the heatsink and the system’s driver...
Categories: Новини світу мікро- та наноелектроніки
ASM launches dual-chamber PE2O8 single-wafer 8”-wafer silicon carbide epi system
At the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM) in Raleigh, NC, USA (29 September-4 October), ASM International N.V. of Almere, the Netherlands, which designs and manufactures semiconductor wafer processing equipment and process solutions, has introduced the dual-chamber PE2O8 silicon carbide (SiC) epitaxy system. Designed to address the needs of the SiC power device segment, the PE2O8 is claimed to be the benchmark epitaxy system for low defectivity and high process uniformity, all with the higher throughput and low cost of ownership needed to enable broader adoption of SiC devices...
Categories: Новини світу мікро- та наноелектроніки
Lumileds demonstrates InGaN-based deep red LEDs with 7.5% wall-plug efficiency
LED product and lighting maker Lumileds LLC of San Jose, CA, USA claims to be first to demonstrate that rich deep red light (615nm dominant wavelength corresponding with 635nm peak) can be produced with indium gallium nitride (InGaN) LEDs, achieving a wall-plug efficiency of 7.5% at a current density of 10A/cm2. The firm says that its breakthroughs address the challenges associated with high indium concentrations, including spectral peak shifts and broadening with current density...
Categories: Новини світу мікро- та наноелектроніки