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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity
Updated: 2 hours 56 min ago
Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D
A team of faculty at Texas Tech University’s Edward E. Whitacre Jr. College of Engineering has received about $4.5m from the Texas Semiconductor Innovation Fund (TSIF) for the project ‘Research and Development of Wide/Ultrawide Bandgap Semiconductor Materials, Devices and Applications’...
Categories: Новини світу мікро- та наноелектроніки
Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D
A team of faculty at Texas Tech University’s Edward E. Whitacre Jr. College of Engineering has received about $4.5m from the Texas Semiconductor Innovation Fund (TSIF) for the project ‘Research and Development of Wide/Ultrawide Bandgap Semiconductor Materials, Devices and Applications’...
Categories: Новини світу мікро- та наноелектроніки
Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints
Wolfspeed Inc of Durham, NC, USA has introduced two new 3.3kV silicon carbide (SiC) power module families – including high-power half-bridge baseplate modules and scalable full-bridge baseplate-less modules in industry-standard footprints — that are purpose-built to address the rapidly approaching power constraints driven by AI data centers and the broader energy transition. Meeting this moment requires power generation, conversion and distribution that is faster, smaller, more efficient, cost-effective, and more resilient than anything silicon alone can deliver. These new module families are said to give engineers the tools to modernize energy infrastructure across the entire energy life-cycle...
Categories: Новини світу мікро- та наноелектроніки
Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints
Wolfspeed Inc of Durham, NC, USA has introduced two new 3.3kV silicon carbide (SiC) power module families – including high-power half-bridge baseplate modules and scalable full-bridge baseplate-less modules in industry-standard footprints — that are purpose-built to address the rapidly approaching power constraints driven by AI data centers and the broader energy transition. Meeting this moment requires power generation, conversion and distribution that is faster, smaller, more efficient, cost-effective, and more resilient than anything silicon alone can deliver. These new module families are said to give engineers the tools to modernize energy infrastructure across the entire energy life-cycle...
Categories: Новини світу мікро- та наноелектроніки
Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers
Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers...
Categories: Новини світу мікро- та наноелектроніки
Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers
Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers...
Categories: Новини світу мікро- та наноелектроніки
Infineon-led European project Moore4Power launches
Coordinated by Infineon Technologies AG of Munich, Germany, the European semiconductor R&D project Moore4Power (More than Moore for Disruptive Innovations in Power Electronics) has been officially launched...
Categories: Новини світу мікро- та наноелектроніки
BluGlass achieves record 1.9W peak output for single-mode GaN laser
BluGlass Ltd of Silverwater, Australia has demonstrated-record gallium nitride (GaN) laser single-mode performance – achieving 1.9W of peak output power from a single-spatial-mode 450nm-wavelength blue GaN laser in a single monolithic chip. This is a 52% improvement over its previous record of 1.25W of single-spatial-mode power...
Categories: Новини світу мікро- та наноелектроніки
Guerrilla RF’s high-power GaN HEMT models now available in Modelithics COMPLETE Library
Modelithics Inc of Tampa, FL, USA, which provides RF and microwave simulation models for electronic design automation (EDA), says that new high-power gallium nitride GaN models from Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — have been added to the Modelithics COMPLETE Library. These new nonlinear models were developed through Guerrilla RF’s collaboration with Modelithics via the Sponsoring MVP (Modelithics Vendor Partner) Program...
Categories: Новини світу мікро- та наноелектроніки
CSA Catapult a core technology partner providing SiC power module for project SONATA
The UK’s Compound Semiconductor Applications (CSA) Catapult says that it is a core technology partner in project SONATA, which is funded by the ATI Programme, to develop an on-aircraft electric taxi system with regenerative braking and energy recovery...
Categories: Новини світу мікро- та наноелектроніки
ams OSRAM sells CMOS Image Sensor business to indie for €40m
ams OSRAM AG of Premstaetten, Austria, and Munich, Germany has sold its CMOS Image Sensor business to Automotive semiconductor and software platform provider indie Semiconductor Inc of Aliso Viejo, CA, USA for €40m, comprising €35m in cash and a €5m seller’s note payable after two years...
Categories: Новини світу мікро- та наноелектроніки
Tower signs customer contracts for $1.3bn silicon photonics revenue for 2027
Specialty analog foundry Tower Semiconductor Ltd of Migdal Haemek, Israel has signed silicon photonics (SiPho) contracts for $1.3bn for 2027 revenue with its largest customers, and the receipt of $290m in customers’ prepayments for capacity reservation. This initial commitment is further reinforced by an even larger contractual wafer commitment for 2028, for which additional associated prepayments are due by January 2027...
Categories: Новини світу мікро- та наноелектроніки
Malta Government Venture Capital approves co-investment in Quinas
Malta Government Venture Capital (MGVC) has approved investment under its co-investment framework to support the growth of Quinas Technology Ltd of London, UK (which was spun off from Lancaster University in early 2023)...
Categories: Новини світу мікро- та наноелектроніки
Cohu receives orders for testing GaN power devices for AI data centers
Cohu Inc of San Diego, CA, USA (a supplier of equipment and services optimizing semiconductor manufacturing yield and productivity) says that a leading semiconductor manufacturer has placed multiple orders totaling about $5m for the DiamondX platform, delivering high-current capability, ultra-low resistance measurement accuracy and scalable multi-site throughput...
Categories: Новини світу мікро- та наноелектроніки
Applied Materials and TSMC partner at EPIC Center in Silicon Vallley to accelerate AI scaling
Building on more than 30 years of collaboration, process equipment maker Applied Materials Inc of Santa Clara, CA, USA has announced a new innovation partnership with foundry Taiwan Semiconductor Manufacturing Company Ltd (TSMC) to accelerate the development and commercialization of semiconductor technologies required for the next era of AI. Working together at Applied’s EPIC Center in Silicon Valley, the companies will co-innovate to advance materials engineering, equipment innovation, and process integration technologies designed to deliver energy-efficient performance from the data center to the edge...
Categories: Новини світу мікро- та наноелектроніки
Infineon expands XHP 2 CoolSiC MOSFET power module portfolio
Infineon Technologies AG of Munich, Germany has expanded its XHP 2 power module portfolio with new variants incorporating CoolSiC MOSFETs 2300V, designed for high-voltage power systems. The new 2300V-class devices support DC-link voltages of up to 1500V, addressing the industry trend toward higher system voltages...
Categories: Новини світу мікро- та наноелектроніки
Lumentum joining Nasdaq-100 Index on 18 May
Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes photonics products for optical networks and lasers for industrial and consumer markets) has been included in the Nasdaq-100 Index. The firm is expected to join the index prior to the market opening on 18 May...
Categories: Новини світу мікро- та наноелектроніки
Cyient launches India’s first GaN power IC family leveraging Navitas technology
Custom ASIC/ASSP and power solutions provider Cyient Semiconductor Pte Ltd of Hyderabad, India has launched seven new gallium nitride (GaN) power devices for the Indian market, developed using the GaN technology of Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors...
Categories: Новини світу мікро- та наноелектроніки
Photon Design enables industry-first 3D quantum dot laser simulation
Photonic simulation CAD software developer Photon Design Ltd of Oxford, UK says that it has enabled the industry-first 3D quantum dot laser simulation, by integrating its HAROLD QD quantum dot laser simulation tool with its PICWave laser diode, SOA and photonic integrated circuit (PIC) simulator...
Categories: Новини світу мікро- та наноелектроніки
Micro-LED CPO optical transceiver market to reach $848m by 2030
Market analyst firm TrendForce’s latest research into the micro-LED industry highlights how generative AI is driving rapid growth in demand for high-speed optical communications. Micro-LED technology offers power consumption as low as 1–2pJ/bit and ultra-low bit-error rates (BER) of ≤10-10. It is also emerging as one of the three major short-distance, high-speed intra-rack transmission solutions for scale-up data-center networks, alongside active electrical cables (AEC) and vertical-cavity surface-emitting laser (VCSEL)-based near-packaged optics (VCSEL NPO). As a result, TrendForce projects that the micro-LED CPO optical transceiver market will reach US$848m by 2030...
Categories: Новини світу мікро- та наноелектроніки



