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Updated: 29 min 20 sec ago
Ascent Solar closes up to $5.5m private placement
Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – has closed its private placement for the purchase and sale of an aggregate of 1,025,643 shares of common stock (or pre-funded warrants in lieu thereof), series A warrants to purchase up to 1,025,643 shares and short-term series B warrants to purchase up to 1,025,643 shares at a purchase price of $1.95 per share (or per pre-funded warrant in lieu thereof) and accompanying warrants priced at-the-market under Nasdaq rules...
Categories: Новини світу мікро- та наноелектроніки
Navitas and Cyient partner to accelerate GaN adoption in India
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — and ASIC/ASSP and power solutions provider Cyient Semiconductor Pte Ltd of Hyderabad, India have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete end-to-end GaN ecosystem...
Categories: Новини світу мікро- та наноелектроніки
Ascent Solar announces up to $5.5m private placement priced at-the-market under Nasdaq rules
Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – has entered into a definitive agreement for the purchase and sale of an aggregate of 1,025,643 shares of common stock (or pre-funded warrants in lieu thereof), series A warrants to purchase up to 1,025,643 shares of common stock, and short-term series B warrants to purchase up to 1,025,643 shares of common stock at a purchase price of $1.95 per share (or per pre-funded warrant in lieu thereof) and accompanying warrants in a private placement priced at-the-market under Nasdaq rules...
Categories: Новини світу мікро- та наноелектроніки
IQE extends multi-year strategic supply agreement with Lumentum
Epiwafer and substrate maker IQE plc of Cardiff, Wales, UK has signed a multi-year extension to its strategic agreement with Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes photonics products for optical networks and lasers for industrial and consumer markets) for the supply of epiwafers supporting advanced sensing technologies...
Categories: Новини світу мікро- та наноелектроніки
Global IP dynamics highlight surging GaN innovation activity in Q3/2025, says KnowMade
KnowMade has released its ‘Q3 2025 GaN Patent Monitor’, which highlights major gallium nitride (GaN) innovation trends in third-quarter 2025, the evolving competitive IP landscape, and the technological advances shaping future power and RF electronics...
Categories: Новини світу мікро- та наноелектроніки
onsemi releases EliteSiC MOSFETs in T2PAK top-cool package
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has released its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, advancing power packaging for automotive and industrial applications. The new product delivers enhanced thermal performance, reliability and design flexibility for demanding high-power, high-voltage applications for markets including electric vehicles, solar infrastructure, and energy storage systems...
Categories: Новини світу мікро- та наноелектроніки
X-FAB’s XbloX accelerates time-to-market for scalable, high-performance SiC MOSFETs
Through its XbloX platform, analog/mixed-signal and specialty foundry X-FAB says that it is offering easy access to a standardized yet flexible set of silicon carbide (SiC) process technologies that accelerate the development of advanced power devices. From rapid prototyping to full production, the modular and fully scalable XbloX platform helps SiC device developers to expedite engineering assessments and technology release, with production starts achieved up to nine months faster than traditional methods, it is reckoned...
Categories: Новини світу мікро- та наноелектроніки
Coherent expands silicon carbide platform from 200mm to 300mm
Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA says that it has leveraged its 200mm silicon carbide platform expertise to develop a next-generation 300mm silicon carbide solution, engineered to manage rising thermal loads, that meets the accelerating performance and scalability needs of modern data centers. As these systems demand higher power density, faster switching, and superior thermal management, the transition to larger-diameter SiC wafers can unlock major gains in energy efficiency and thermal performance, the firm says...
Categories: Новини світу мікро- та наноелектроніки
ROHM launches 13–65mΩ SiC MOSFETs in TOLL package
Japan-based ROHM has begun mass production of the SCT40xxDLL series of silicon carbide (SiC) MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, the new packages offer about 39% improved thermal performance, enabling high-power handling despite their compact size and low profile. It is suitable for industrial equipment such as server power supplies and ESS (energy storage systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design...
Categories: Новини світу мікро- та наноелектроніки
Infineon enhances Electreon’s wireless in-road EV charging with silicon carbide technology
Infineon Technologies AG of Munich, Germany will supply customized silicon carbide (SiC) power modules to Electreon, a provider of wireless charging solutions for electric vehicles (EVs), for its dynamic in-road charging technology...
Categories: Новини світу мікро- та наноелектроніки
Smartphone production grows 9% in Q3/2025, driven by seasonal demand and new product releases
In second-half 2025, the smartphone market entered its peak season, with new product launches further boosting output, according to the latest research by market analyst TrendForce. In third-quarter 2025, global smartphone production hit 328 million units, up 9% quarter-on-quarter and 7% year-on-year. These numbers highlight a distinct seasonal uptick..
Categories: Новини світу мікро- та наноелектроніки
Filtronic awarded £1.2m funding to develop 550W Ka-band solid-state power amplifiers
Filtronic plc of Sedgefield and Leeds, UK — which designs and manufactures RF and millimeter-wave (mmWave) transmit & receive components and subsystems for the space, aerospace & defence, and telecoms infrastructure markets — has been awarded £1.2m funding through the UK Space Agency’s National Space Innovation Programme (NSIP) for a project to develop a high-power 550W Ka-band solid-state power amplifier (SSPA)...
Categories: Новини світу мікро- та наноелектроніки
Vishay launches 1200V SiC MOSFET power modules in MAACPAK PressFit package
Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has introduced two new 1200V MOSFET power modules designed to increase efficiency and reliability for medium- to high-frequency applications in automotive, energy, industrial and telecom systems. Offering four and six MOSFETs, respectively, in the low-profile MAACPAK PressFit package, the Vishay Semiconductors VS-MPY038P120 and VS-MPX075P120 combine the latest silicon carbide (SiC) technology with a rugged transfer mold construction...
Categories: Новини світу мікро- та наноелектроніки
US ITC preliminary determination finds violation of Infineon patent by Innoscience
In a preliminary determination, the US International Trade Commission (ITC) has found violation of one patent (US 9,899,481) owned by Infineon Technologies AG of Munich, Germany concerning gallium nitride (GaN) technology by China-based Innoscience (Suzhou) Technology Holding Co Ltd, which manufactures GaN-on-silicon power chips on 8” silicon wafers. In addition, the ITC confirmed that both patents asserted by Infineon in the proceedings before the ITC (US 9,899,481 and 9,070,755) are legally valid...
Categories: Новини світу мікро- та наноелектроніки
Ascent provides space company with PV modules for power generation testing in cislunar space
Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – says that it recently provided test modules to a leading space company...
Categories: Новини світу мікро- та наноелектроніки
Nuvoton launches compact 1.7W 402nm violet laser in TO-56 CAN package
Nuvoton Technology Corp Japan of Kyoto, Japan has launched the KLC435FS01WW compact high-power violet laser diode, which achieves what is claimed to be industry-leading optical output power in an industry-standard TO-56 CAN package of 1.7W at 402nm wavelength...
Categories: Новини світу мікро- та наноелектроніки
Cree LED and SANlight partner on high-efficiency horticulture lighting
A partnership has been announced in which J Series products of Cree LED Inc of Durham, NC, USA (a Penguin Solutions brand) will be used in the new STIXX-Series luminaires of SANlight GmbH of Schruns, Austria, which specializes in LED lighting solutions for both commercial and home gardening applications...
Categories: Новини світу мікро- та наноелектроніки
onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA and China-based Innoscience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 200mm silicon wafers — have signed a non-binding memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40–200V, and significantly broaden customer adoption...
Categories: Новини світу мікро- та наноелектроніки
Navitas sampling 3300V and 2300V UHV silicon carbide product portfolio
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced the sample availability of its new 3300V and 2300V ultrahigh-voltage (UHV) products in power module, discrete and known good die (KGD) formats. The new SiC products are claimed to set a benchmark for reliability and enhanced performance in ultrahigh-voltage power electronics...
Categories: Новини світу мікро- та наноелектроніки
NUBURU agrees to acquire Italian laser specialist LYOCON
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and developed and previously manufactured high-power industrial blue lasers — has signed binding heads of terms to acquire Lyocon S.r.l., an Italian laser-engineering and photonics company specializing in advanced laser sources, precision optical systems, and customized laser platforms for industrial, medical and high-reliability applications...
Categories: Новини світу мікро- та наноелектроніки



