Semiconductor today

Filtronic plc of Sedgefield and Leeds, UK — which designs and manufactures RF and millimeter-wave (mmWave) transmit & receive components and subsystems for the space, aerospace & defence, and telecoms infrastructure markets — has announced a $68.1m (£51.3m) follow-on order to supply Cerus E-band gallium nitride (GaN) solid-state power amplifier (SSPA) units to SpaceX...

Renesas Electronics Corp of Tokyo, Japan has launched what it claims is the industry’s first 650V GaN device with dual-side cooling for high-density power conversion in 800V high-voltage DC (HVDC) AI data-center architectures. The new TP65H020G4PLSGBD D-Mode device delivers 20mΩ on-resistance — one of the lowest in its class — in an ultra-compact, dual-side-cooled (DSC) PQFN package that handles more power in less space. Renesas is currently sampling the device to major AI data-center OEMs and ODMs...

Starlab Space LLC of Webster, TX, USA — which is developing an AI-enabled commercial space station, expanding access to low Earth orbit (LEO) research and manufacturing — has announced a payload reservation from Elethron, an advanced materials and process engineering company developing high-performance crystalline materials for semiconductor applications...

Space Forge Inc (which, as a branch of Space Forge Ltd of Cardiff, Wales, UK, operates from Florida’s Space Coast) says that its ‘Microgravity Semiconductor Manufacturing: Enabling Extreme Performance Electronics’ solution has achieved ‘Awardable’ status through the US Defense Advanced Research Projects Agency (DARPA) Expedited Research Innovation System (ERIS) Marketplace...

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Aiming to strengthen its supply chains and accelerate semiconductor technologies from concept to reality, the UK has launched Semiconductor Catapult, which provides customers with access to UK semiconductor supply chain integration, design, system test and validation, delivering long-term economic benefit to the UK...

The Arkansas Research Institute for Electronics Systems (ARIES) has been launched, with the aim to develop, produce and deploy next-generation power electronics, microelectronics and semiconductors that thrive in the most challenging environments...

Infineon Technologies AG of Munich, Germany is to deliver silicon carbide (SiC) power devices to US-based intelligent power management company Eaton Corp for use in its medium-voltage solid-state transformer (MVSST) 2.0 platform designed for deployment across the Asia-Pacific (APAC). The collaboration helps to increase the efficiency and reliability of the power conversion required to connect AI data centers to the electricity grid. It targets 800V direct current (VDC) data-center power distribution architectures...

Gallium nitride (GaN) and silicon carbide (SiC) power semiconductor firm Navitas Semiconductor Corp of Torrance, CA, USA has been awarded the ALATTIS (Accelerated, Large-Area, 10kV SiC IGBT) program to develop next-generation 10kV silicon carbide (SiC) power semiconductor technology...

Photonic integrated circuits (PICs) use manufacturing processes developed for the semiconductor industry to miniaturize complex optical functionality onto a chip. PICs offer significant advantages over electronic ICs. Since light travels about 3x faster than electricity, PICs can transmit data with much higher throughput. Propagation losses are also typically much smaller compared to resistance losses in electronic ICs...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has announced the commercial availability of its new Premium 200mm n-type silicon carbide substrate, expanding its 200mm SiC materials portfolio with a higher-quality starting material designed to improve yield through reduced defects and greater wafer-shape stability...

Fraunhofer Institute for Applied Solid State Physics IAF of Freiburg, Germany has developed a broadband distributed amplifier monolithic microwave integrated circuit (MMIC) chip suitable for use in data centers, measurement systems and sensors. Modern data centers, high-precision measurement systems and high-resolution radar sensors rely on extremely broadband amplifier chips that feature both low noise and high output power...

Molecular beam epitaxy (MBE) system maker Riber S.A. of Bezons, France has confirmed 19% growth in revenue from €10.7m in first-half 2025 to €12.7m for first-half 2026, driven by strong momentum in Services & Accessories and resilient Systems sales...

Fabless company Wise Integration SAS of Hyeres, France — which specializes in digital control solutions for wide-bandgap (GaN and SiC)-based power converters — and gallium nitride (GaN) and silicon carbide (SiC) power semiconductor firm Navitas Semiconductor Corp of Torrance, CA, USA have agreed to collaborate on advancing power-computing applications for AI PCs, high-end workstations, desktop computers for gamers, and industrial systems...

Toshiba Electronic Devices & Storage Corp (TDSC) of Kawasaki, Japan has launched the IX800FXF2YMS4, a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain–source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section (an indicator of surge current capability)...

On 10 September the South Wales-based compound semiconductor cluster CSconnected Ltd brought together funders, delivery partners and industry colleagues to celebrate the outcomes, impact and legacy of its Strength in Places Fund (SIPF) program, which concluded in May...

Specialty analog foundry Tower Semiconductor Ltd of Migdal Haemek, Israel and Tel Aviv-based fabless photonic integrated circuit (PIC) chip firm NewPhotonics Ltd have announced high-volume shipment of laser-integrated serviceable optical engines designed to meet the urgent and growing demand for high-bandwidth, energy-efficient optical interconnects in artificial intelligence infrastructure...

Specialty analog foundry Tower Semiconductor Ltd of Migdal Haemek, Israel is participating in booth #C1014 at the European Conference on Optical Communications (ECOC 2026) exhibition at the Palacio de Ferias y Congresos de Málaga (FYCMA) in Spain (21–23 September), where company representatives are available for meetings to discuss current and future silicon photonics roadmap...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has unveiled the Embedded Power Platform (EPP), an architecture that uses the silicon wafer itself as the foundation of the package and introduces a highly integrated approach to power system design. Designed as a scalable platform, EPP brings electrical, mechanical and thermal design together from the outset to help customers achieve higher power density, improve system performance and accelerate development in AI, electrification and autonomous applications...

On stand 1365 during the European Conference on Optical Communication (ECOC 2026) exhibition at the Palacio de Ferias y Congresos de Málaga (FYCMA), Spain (21–23 September), Avicena Tech Corp of Sunnyvale, CA, USA is demonstrating what it claims is the industry’s first connectorized micro-LED optical interconnect...