Semiconductor today

Photonic simulation CAD software developer Photon Design Ltd of Oxford, UK has added a silicon modulator design capability to its HAROLD semiconductor and laser simulation tool, across a range of geometries...

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has announced the production launch of its GRF5847 linear power amplifier (PA) module, which combines fully integrated 50Ω input and output matching with what is claimed to be exceptional output power, efficiency and linearity in a compact surface-mount package...

Volta Metals Ltd of Toronto, Canada (which owns, has optioned and is currently exploring a critical minerals portfolio of rare-earths, gallium, lithium, cesium and tantalum projects in Ontario) says that the Ontario government has awarded funding of up to $500,000 under the Critical Minerals Innovation Fund (CMIF) for work on the its Springer Rare Earth Element (REE) and Gallium Project, which spans 4750-hectares on the traditional territory of the Nipissing First Nations in Sturgeon Falls about 70km east of Sudbury, Ontario, with direct access via the Trans-Canada Highway and Highway 64. The award will be applied towards metallurgical and mineral processing work aimed at enhancing recoveries of rare-earth elements and gallium from mineralization at the Springer Deposit...

Mining exploration company Nimy Resources Ltd of Perth, Western Australia and Perth-based Curtin University are to undertake what is described as a pioneering research program into processing gallium...

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has announced the first commercial acceptance and qualification of its LUMINA+ metal-organic chemical vapor deposition (MOCVD) system by Ennostar Corp of Hsinchu, Taiwan (a provider of integrated optoelectronic solutions, specializing in R&D and manufacturing III-V materials). The order is said to set a new benchmark for high-volume arsenide and phosphide (As/P) production...

Nanoelectronics research center imec of Leuven, Belgium is evolving its 300mm RF silicon interposer into a system-level platform for the heterogeneous integration of III–V chiplets on Si-CMOS. By uniquely combining high-density embedded capacitors, a scalable modeling framework for passive components and laser-assisted bonding for III–V chiplet assembly, the platform lays the foundation for next-generation wireless (mmWave and sub-THz) systems, as well as RF-grade signal handling for ultrafast data-center applications...

US-based aerospace & defense technology company Northrop Grumman Corp has fabricated a new gallium nitride (GaN) chip that sets what is claimed to be a new performance standard for military and commercial use...

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has announced a strategic production partnership with ROHM Semiconductor, which has selected Aixtron’s G10-GaN metal-organic chemical vapor deposition (MOCVD) system to establish in-house gallium nitride (GaN) epitaxy at its Hamamatsu plant in Japan. The system is currently ramping for volume production of 8-inch GaN epitaxial wafers for 650V and 100V power device platforms...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91132, a compact 3-phase BLDC motor drive inverter reference design based on the EPC33110 GaN three-phase module...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that its new EPC2378 25V eGaN power transistor has entered mass production, enabling high-density power system designers to achieve higher efficiency, faster switching and greater power density in demanding DC–DC conversion applications. EPC2378 is optimized for synchronous rectifier applications on the secondary side of a 48V-8 or 5V LLC converter. In addition to what is claimed to be the best-in-class 410µΩ typical RDS(on), the devices have an industry-leading low RDS(on) x QG figure of merit that enables higher-frequency and higher-efficiency operation. These capabilities are of particular value in fast-growth markets such as AI infrastructure, data centers, telecom, industrial systems and advanced computing platforms...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has launched its GaNEXUS gallium nitride (GaN) power portfolio...

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has announced an expanded focus on the fast-growing tactical radio market. Backed by a broad portfolio that ranges from low-noise small-signal devices to high-power RF amplifiers, Guerrilla RF now offers more than 60 high-performance RFIC solutions designed to strengthen communications links by enabling highly sensitive receivers and efficient, high-power transmit paths that protect link margin and maintain mission-critical connectivity...

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has released 1200V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side-cooled surface-mount package optimized for high-power-density and thermally demanding applications...

ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June...

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its QSiC Dual3 family of half-bridge MOSFET modules, adding high-thermal-performance options with AlN (aluminium nitride) substrates and pre-applied TIM (thermal interface material), as well as new 1700V devices...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has introduced its fifth-technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200V and 750V automotive and industrial applications...

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) and power electronics firm Semikron Danfoss GmbH of Nuremberg, Germany have signed a memorandum of understanding (MoU) to explore a strategic collaboration on silicon carbide (SiC)-based power modules for automotive traction inverter applications. The collaboration aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration. Together, the firms intend to evaluate how a joint approach can enable high-performance, scalable solutions for next-generation electric vehicles...

Following publication of the UK Government’s AI Hardware Plan, to address a critical gap in UK AI infrastructure the Compound Semiconductor Applications (CSA) Catapult is to transition over this summer to become the Semiconductor Catapult, developed from its existing capability to focus on R&D for energy-efficient, deployable systems to accelerate the journey from AI research to real-world deployment, for data centers and industry...

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices...

WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — says that its NP12-0B process has been qualified for 40V operation...