Semiconductor today

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices...

WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — says that its NP12-0B process has been qualified for 40V operation...

Global aerospace propulsion, services and systems firm GE Aerospace of Evendale, OH, USA and Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — have entered into a memorandum of understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide across the industrial, aerospace and defense markets...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silicon carbide (SiC) MOSFETs and gate drivers based on their specific requirements. The interactive tool makes it easier to evaluate pairing behavior and trade-offs, helping to accelerate the development of power electronics designs. It also serves as the front door to onsemi’s broader simulation toolset for system-level performance and efficiency analysis...

Infineon Technologies AG and Siemens AG of Munich, Germany are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor (solid-state) circuit breakers. This will enhance the efficiency, power density and reliability of Siemens’ protection solution...

At the PCIM Europe 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 June), Fraunhofer Institute for Applied Solid State Physics IAF is presenting the latest developments in gallium nitride (GaN) power electronics...

Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has unveiled qDesign, an AI-driven generative design service that programmatically generates, simulates and iterates on QPTs patented qAttach thermal interface layer for any power module, replacing weeks of human-in-the-loop CAD and simulation cycles with AI-generated topologies and automated optimization...

Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has unveiled qDesign, an AI-driven generative design service that programmatically generates, simulates and iterates on QPTs patented qAttach thermal interface layer for any power module, replacing weeks of human-in-the-loop CAD and simulation cycles with AI-generated topologies and automated optimization...

As hyperscalers and enterprise operators race to build increasingly powerful AI infrastructure, power delivery and energy efficiency are emerging as the most critical constraints. Industry analysts estimate that AI rack power requirements could grow beyond 1MW/rack in the very near future...

As hyperscalers and enterprise operators race to build increasingly powerful AI infrastructure, power delivery and energy efficiency are emerging as the most critical constraints. Industry analysts estimate that AI rack power requirements could grow beyond 1MW/rack in the very near future...

In booth 20036 at 2026 IEEE MTT-S International Microwave Symposium (IMS) in Boston, MA, USA (7–12 June), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) is highlighting its latest innovations under the theme: ‘Proven RF Solutions. Live at IMS’...

In booth 20036 at 2026 IEEE MTT-S International Microwave Symposium (IMS) in Boston, MA, USA (7–12 June), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) is highlighting its latest innovations under the theme: ‘Proven RF Solutions. Live at IMS’...

Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has developed a 650V GaN IC for automotive applications that addresses automakers’ desire to improve inverter efficiency. ICeGaN helps designers to realise smaller, lighter inverters that help to extend EV range, which is crucial in continuing to drive consumer momentum away from internal combustion engine ICE powertrains and towards EVs...

The South Wales-based compound semiconductor cluster CSconnected has published its Strength in Places Fund (SIPF) impact report 2026, marking the conclusion of a transformative program that has established South Wales as a globally recognized hub for compound semiconductor innovation...

Next-generation AI and data-center power electronics are placing new demands on switching performance, efficiency and reliability. Meeting those demands requires high-fidelity switching data that reflects real device and module behaviour under realistic operating conditions...

Kyocera Corp of Kyoto, Japan (which manufactures fine ceramic components) has entered into a share purchase agreement for the laser diode business of Tokyo-based Ushio Inc...

Semiconductor materials and technology licensing company Atomera Inc of Los Gatos, CA, USA has announced a new approach to GaN-on-silicon that addresses a key performance barrier limiting its use in mainstream RF applications...

Covalent Corp of Sunnyvale, CA, USA has announced a strategic collaboration with UK-based Oxford Instruments that expands its semiconductor characterization offering with customer-ready, wafer-level Raman and photoluminescence (PL) workflows. The capability is now available to customers tackling defectivity, stress and strain mapping, process development, and failure analysis at full-wafer scale...

ElementUSA Inc of Fort Lauderdale, FL, USA and Colorado School of Mines (CSM) of Golden, CO, USA have been awarded $67m from the US Department of Energy (DOE) to advance the design, construction, commissioning and operation of a rare-earth element (REE) processing facility in St. John the Baptist Parish, Louisiana...

In late June, Tokyo-based Mitsubishi Electric Corp will begin sequentially shipping samples of two types of new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) in bare die form...