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BluGlass demos leading-edge precision in visible GaN lasers at ICNS-15

Пн, 07/14/2025 - 21:29
In an invited presentation on GaN distributed feedback (DFB) lasers and amplifiers for next-generation high-power devices at the International Congress on Nitride Semiconductors (ICNS-15) in Malmö, Sweden (11–17 July), BluGlass Ltd of Silverwater, Australia has unveiled performance enhancements to its gallium nitride (GaN) lasers, demonstrating what it claims is leading-edge precision...

Efficient integration of quantum dot lasers on silicon chiplets

Пн, 07/14/2025 - 12:42
Although III-V semiconductor lasers can be monolithically integrated with photonic chips by directly growing a crystalline layer of laser material (such as indium arsenide) on silicon substrate, photonic chips with such integrated laser source are challenging to manufacture due to mismatch between structures or properties of III-V semiconductor material and silicon...

Aeluma secures new contracts from NASA and US Navy

Чтв, 07/10/2025 - 23:42
Aeluma Inc of Goleta, CA, USA — which develops compound semiconductor materials on large-diameter substrates — has won new contracts with NASA and the US Navy that could accelerate development and commercialization for next-generation quantum and sensing systems...

NUBURU stockholders approve strategy to finance transformation

Чтв, 07/10/2025 - 20:04
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — says that its stockholders have overwhelmingly approved key proposals in support of its financing strategy, a pivotal milestone in its strategic transformation for defense-tech and operational resilience through its Defense & Security Hub initiative...

Nexperia adds 1200V 20A SiC Schottky diodes for power-intense infrastructure

Чтв, 07/10/2025 - 14:14
Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has added two 1200V 20A silicon carbide (SiC) Schottky diodes to its portfolio of power electronics components...

AXT reduces Q2 revenue guidance from $20–22m to $17.5–18m

Чтв, 07/10/2025 - 10:12
For second-quarter 2025, AXT Inc of Fremont, CA, USA — which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials — expects preliminary revenue of $17.5–18m, below the guidance of $20–22m provided on 1 May and down from $27.9m a year ago. This is due primarily to slower-than-expected issuance of export control permits for its GaAs products in Q2 and a weaker demand environment in China...

Singapore opens NSTIC (GaN), first national facility for gallium nitride

Срд, 07/09/2025 - 21:26
Singapore’s Minister-in-charge of Energy and Science & Technology Dr Tan See Leng has officially opened the National Semiconductor Translation and Innovation Centre for Gallium Nitride (NSTIC (GaN)) as Singapore’s first national facility dedicated to gallium nitride...

Phlux makes available evaluation board for Aura Noiseless InGaAs APDs

Срд, 07/09/2025 - 13:01
Phlux Technology — which was spun off from the University of Sheffield in 2020 — is offering an evaluation board for its Aura family of Noiseless InGaAs avalanche photodiodes (APDs). The APDs are used as 1550nm infrared sensors and claim 12x greater sensitivity than traditional devices in applications spanning laser rangefinders, optical networks and test equipment, and LiDAR...

Dhruva’s Solis+ space-grade solar panels to be used by Pixxel

Срд, 07/09/2025 - 10:42
Dhruva Space Private Ltd of Hyderabad, India (which provides satellites coupled with Earth stations and launch services) has entered into a strategic partnership with Bengaluru-based space data company and spacecraft manufacturer Pixxel, which is building the world's highest-resolution hyperspectral imaging satellite constellation (enabling the detection, monitoring and prediction of critical global phenomena across agriculture, oil & gas, mining, environment, and other sectors, with what is reckoned to be 50x richer detail than conventional satellites). This India-based collaboration will see Dhruva joining forces with Pixxel to integrate space-grade solar panels into their next satellite fleet...

Unipress orders Taiyo Nippo Sanso MOCVD platforms

Втр, 07/08/2025 - 18:18
Industrial gas company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan (part of Nippon Sanso Holdings Group) says that multiple TNSC SR4000HT metal-organic chemical vapor deposition (MOCVD) reactors are being purchased by the Polish Academy of Sciences’ Institute of High Pressure Physics (IHPP, or Unipress) for its nitride R&D...

Wolfspeed appoints former NXP and ams OSRAM executive Gregor van Issum as CFO

Пн, 07/07/2025 - 21:29
Following a comprehensive review of internal and external candidates, Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has appointed Gregor van Issum as chief financial officer (CFO), effective 1 September. He succeeds interim CFO Kevin Speirits, who will remain with Wolfspeed to support the firm and ensure a smooth transition. van Issum will be relocating to North Carolina and be based in Durham, reporting to CEO Robert Feurle...

National Research Council of Canada signs MoU with Quebec’s C2MI and UK’s CSA Catapult

Птн, 07/04/2025 - 15:52
Together with UK-based Compound Semiconductor Applications (CSA) Catapult and Quebec-based MiQro Innovation Collaborative Centre (C2MI), the National Research Council of Canada (NRC) has put in place a memorandum of understanding (MoU) to deepen connections and grow a strong and resilient semiconductor supply chain for Canada, the UK, and other G7 countries...

Aixtron leading project to increase energy efficiency in SiC layer deposition

Чтв, 07/03/2025 - 18:22
In cooperation with Erlangen-based Fraunhofer IISB (Institute for Integrated Systems and Device Technology) and Neuss-based bimanu Cloud Solutions GmbH in Germany, Herzogenrath-based deposition equipment maker Aixtron SE is leading a joint project ‘Increasing Energy Efficiency in SiC Epitaxy’...

TSMC to cease GaN foundry production by end-July 2027 due to price pressure from Chinese rivals

Чтв, 07/03/2025 - 15:18
When gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA announced a strategic partnership for Taiwanese foundry Powerchip Semiconductor Manufacturing Corp (PSMC) to start production of 100V GaN products on 200mm silicon wafers in first-half 2026, this includes Navitas’ 650V devices transitioning from its existiing sole GaN-on-Si wafer foundry supplier Taiwan Semiconductor Manufacturing Company Ltd (TSMC) to Powerchip over the next 12–24 months...

Mouser enters distribution agreement with Ampleon

Чтв, 07/03/2025 - 12:12
Mouser Electronics Inc (a Berkshire Hathaway company) has announced a global distribution agreement with Ampleon B.V. of Nijmegen, The Netherlands, which manufactures radio frequency power devices based on gallium nitride (GaN) and LDMOS technologies. Ampleon says that its portfolio offers flexibility in scaling design and production for any volume and addresses a wide range of applications, including 5G infrastructure, industrial, scientific & medical (ISM), navigation, broadcast communications, and safety radio...

Go Maruyama becomes pSemi’s CEO as Tatsuo Bizen retires

Чтв, 07/03/2025 - 11:41
Murata company pSemi Corp of San Diego, CA, USA – a fabless provider of radio-frequency (RF), analog and mixed-signal solutions – has announced leadership changes and organizational restructuring to support its evolving business strategy and future growth...

Infineon on track to ship customer samples of GaN on 300mm wafers in Q4/2025

Чтв, 07/03/2025 - 00:52
Infineon Technologies AG of Munich, Germany says that its scalable gallium nitride (GaN) manufacturing on 300mm wafers is on track for first samples to be available to customers as of fourth-quarter 2025, positioning it to expand its customer base and reinforce its position as a leading integrated device manufacturer (IDM) in the GaN market as demand continues to grow. The GaN market for power applications will grow by 36% annually to about $2.5bn by 2030, forecasts Yole Group in its report ‘Power SiC and GaN Compound Semiconductor Market Monitor, Q1 2025’...

Navitas plans 200mm GaN production with PSMC

Срд, 07/02/2025 - 14:15
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced a strategic partnership with Taiwanese foundry Powerchip Semiconductor Manufacturing Corp (PSMC) to start production and continue development of 200mm GaN-on-silicon technology...

Wavetek deploys Silvaco’s Victory TCAD for GaN-based device development

Втр, 07/01/2025 - 22:26
Silvaco Group Inc of Santa Clara, CA, USA — which provides technology computer-aided design (TCAD), electronic design automation (EDA) software and semiconductor intellectual property (SIP) for process and device development — says that its Victory TCAD solution has been adopted by gallium arsenide (GaAs) foundry Wavetek Microelectronics Corp of Hsinchu Science Park, Taiwan for the development of next-generation gallium nitride (GaN) devices targeting high-performance connectivity applications in 5G, Wi-Fi and IoT markets...

NUBURU reports progress in acquisition of Tekne as part of Defense & Security Hub

Втр, 07/01/2025 - 16:49
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — has reported progress in its strategic transformation, including developments within its planned Defense & Security Hub and key acquisitions...

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