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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity
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X-FAB’s XbloX accelerates time-to-market for scalable, high-performance SiC MOSFETs
Through its XbloX platform, analog/mixed-signal and specialty foundry X-FAB says that it is offering easy access to a standardized yet flexible set of silicon carbide (SiC) process technologies that accelerate the development of advanced power devices. From rapid prototyping to full production, the modular and fully scalable XbloX platform helps SiC device developers to expedite engineering assessments and technology release, with production starts achieved up to nine months faster than traditional methods, it is reckoned...
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Coherent expands silicon carbide platform from 200mm to 300mm
Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA says that it has leveraged its 200mm silicon carbide platform expertise to develop a next-generation 300mm silicon carbide solution, engineered to manage rising thermal loads, that meets the accelerating performance and scalability needs of modern data centers. As these systems demand higher power density, faster switching, and superior thermal management, the transition to larger-diameter SiC wafers can unlock major gains in energy efficiency and thermal performance, the firm says...
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ROHM launches 13–65mΩ SiC MOSFETs in TOLL package
Japan-based ROHM has begun mass production of the SCT40xxDLL series of silicon carbide (SiC) MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, the new packages offer about 39% improved thermal performance, enabling high-power handling despite their compact size and low profile. It is suitable for industrial equipment such as server power supplies and ESS (energy storage systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design...
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Infineon enhances Electreon’s wireless in-road EV charging with silicon carbide technology
Infineon Technologies AG of Munich, Germany will supply customized silicon carbide (SiC) power modules to Electreon, a provider of wireless charging solutions for electric vehicles (EVs), for its dynamic in-road charging technology...
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Smartphone production grows 9% in Q3/2025, driven by seasonal demand and new product releases
In second-half 2025, the smartphone market entered its peak season, with new product launches further boosting output, according to the latest research by market analyst TrendForce. In third-quarter 2025, global smartphone production hit 328 million units, up 9% quarter-on-quarter and 7% year-on-year. These numbers highlight a distinct seasonal uptick..
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Filtronic awarded £1.2m funding to develop 550W Ka-band solid-state power amplifiers
Filtronic plc of Sedgefield and Leeds, UK — which designs and manufactures RF and millimeter-wave (mmWave) transmit & receive components and subsystems for the space, aerospace & defence, and telecoms infrastructure markets — has been awarded £1.2m funding through the UK Space Agency’s National Space Innovation Programme (NSIP) for a project to develop a high-power 550W Ka-band solid-state power amplifier (SSPA)...
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Vishay launches 1200V SiC MOSFET power modules in MAACPAK PressFit package
Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has introduced two new 1200V MOSFET power modules designed to increase efficiency and reliability for medium- to high-frequency applications in automotive, energy, industrial and telecom systems. Offering four and six MOSFETs, respectively, in the low-profile MAACPAK PressFit package, the Vishay Semiconductors VS-MPY038P120 and VS-MPX075P120 combine the latest silicon carbide (SiC) technology with a rugged transfer mold construction...
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US ITC preliminary determination finds violation of Infineon patent by Innoscience
In a preliminary determination, the US International Trade Commission (ITC) has found violation of one patent (US 9,899,481) owned by Infineon Technologies AG of Munich, Germany concerning gallium nitride (GaN) technology by China-based Innoscience (Suzhou) Technology Holding Co Ltd, which manufactures GaN-on-silicon power chips on 8” silicon wafers. In addition, the ITC confirmed that both patents asserted by Infineon in the proceedings before the ITC (US 9,899,481 and 9,070,755) are legally valid...
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Ascent provides space company with PV modules for power generation testing in cislunar space
Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – says that it recently provided test modules to a leading space company...
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Nuvoton launches compact 1.7W 402nm violet laser in TO-56 CAN package
Nuvoton Technology Corp Japan of Kyoto, Japan has launched the KLC435FS01WW compact high-power violet laser diode, which achieves what is claimed to be industry-leading optical output power in an industry-standard TO-56 CAN package of 1.7W at 402nm wavelength...
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Cree LED and SANlight partner on high-efficiency horticulture lighting
A partnership has been announced in which J Series products of Cree LED Inc of Durham, NC, USA (a Penguin Solutions brand) will be used in the new STIXX-Series luminaires of SANlight GmbH of Schruns, Austria, which specializes in LED lighting solutions for both commercial and home gardening applications...
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onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA and China-based Innoscience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 200mm silicon wafers — have signed a non-binding memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40–200V, and significantly broaden customer adoption...
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Navitas sampling 3300V and 2300V UHV silicon carbide product portfolio
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced the sample availability of its new 3300V and 2300V ultrahigh-voltage (UHV) products in power module, discrete and known good die (KGD) formats. The new SiC products are claimed to set a benchmark for reliability and enhanced performance in ultrahigh-voltage power electronics...
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NUBURU agrees to acquire Italian laser specialist LYOCON
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and developed and previously manufactured high-power industrial blue lasers — has signed binding heads of terms to acquire Lyocon S.r.l., an Italian laser-engineering and photonics company specializing in advanced laser sources, precision optical systems, and customized laser platforms for industrial, medical and high-reliability applications...
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Avicena’s LightBundle optical links operating at 4Gbps per lane with transmitter current as low as 100µA per LED
At SuperCompute 2025 (SC25) in St Louis, MO, USA (16–21 November), Avicena Tech Corp of Sunnyvale, CA, USA has announced that its LightBundle micro-LED-based optical links now operate at 4Gbps per lane with transmitter currents as low as 100µA per LED. At this current, each link closes at a raw bit-error rate (BER) of 1x10–12 with an equivalent energy of 80fJ/bit per LED, all without forward error correction (FEC)...
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SemiLEDs full-year revenue grows eight-fold, despite last-quarter drop
For fiscal fourth-quarter 2025 to end-August), LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has reported revenue of $13.22m, down on $17.65m last quarter. Nevertheless, fiscal full-year revenue has grown more than eight-fold from $5.18m for 2024 to $43m for 2025...
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Infineon’s CoolGaN technology used in Anker’s new-generation 160W prime charger
Infineon Technologies AG of Munich, Germany has expanded its collaboration with Anker Innovations of Changsha, Hunan, China (a manufacturer of fast-charging power devices) to develop a new generation of high-speed chargers that can deliver up to 160W of power in a compact, pocket-size format. The result of the cooperation is said to be redefining industry standards for high power density and efficiency, represented by the launch of Anker’s 160W Prime Charger. The device features Infineon’s latest XDP digital controller and gallium nitride (GaN)-based CoolGaN transistor technology, enabling a credit-card-size design, which makes the charger suitable for travelers and professionals alike...
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Navitas consolidates Asian franchised distributor base
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — and Asian distributor WT Microelectronics Co Ltd have strengthened their strategic partnership to provide enhanced technical and supply chain services in Asia...
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Nimy gains CSIRO Kick-Start program funding for gallium exploration
Mining exploration company Nimy Resources Ltd of Perth, Western Australia has entered into an agreement with Australia’s national science agency CSIRO, supported by their Kick-Start program, to commence the Regolith Research study. This study aims to develop a geomorphic model to enhance the confidence in gallium exploration within the Mons Project in Western Australia...
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Quantum Critical Metals and Nusano collaborate on developing and refining critical minerals in North America
Canadian mineral exploration company Quantum Critical Metals Corp and Nusano Inc of Valencia, CA, USA (a privately held physics-based technology company specializing in advanced mass-separation processes) have signed a memorandum of understanding (MoU) to collaborate on the development and refining of critical minerals in North America. The partnership aims to strengthen supply chains for US and Canadian industries by bringing high-purity mineral processing back to North American soil. Most refining of critical minerals currently occurs overseas. This dependence leaves North America vulnerable to geopolitical, economic and environmental disruptions...
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