Semiconductor today

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has announced a strategic production partnership with ROHM Semiconductor, which has selected Aixtron’s G10-GaN metal-organic chemical vapor deposition (MOCVD) system to establish in-house gallium nitride (GaN) epitaxy at its Hamamatsu plant in Japan. The system is currently ramping for volume production of 8-inch GaN epitaxial wafers for 650V and 100V power device platforms...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91132, a compact 3-phase BLDC motor drive inverter reference design based on the EPC33110 GaN three-phase module...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that its new EPC2378 25V eGaN power transistor has entered mass production, enabling high-density power system designers to achieve higher efficiency, faster switching and greater power density in demanding DC–DC conversion applications. EPC2378 is optimized for synchronous rectifier applications on the secondary side of a 48V-8 or 5V LLC converter. In addition to what is claimed to be the best-in-class 410µΩ typical RDS(on), the devices have an industry-leading low RDS(on) x QG figure of merit that enables higher-frequency and higher-efficiency operation. These capabilities are of particular value in fast-growth markets such as AI infrastructure, data centers, telecom, industrial systems and advanced computing platforms...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has launched its GaNEXUS gallium nitride (GaN) power portfolio...

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has announced an expanded focus on the fast-growing tactical radio market. Backed by a broad portfolio that ranges from low-noise small-signal devices to high-power RF amplifiers, Guerrilla RF now offers more than 60 high-performance RFIC solutions designed to strengthen communications links by enabling highly sensitive receivers and efficient, high-power transmit paths that protect link margin and maintain mission-critical connectivity...

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has released 1200V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side-cooled surface-mount package optimized for high-power-density and thermally demanding applications...

ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June...

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its QSiC Dual3 family of half-bridge MOSFET modules, adding high-thermal-performance options with AlN (aluminium nitride) substrates and pre-applied TIM (thermal interface material), as well as new 1700V devices...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has introduced its fifth-technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200V and 750V automotive and industrial applications...

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) and power electronics firm Semikron Danfoss GmbH of Nuremberg, Germany have signed a memorandum of understanding (MoU) to explore a strategic collaboration on silicon carbide (SiC)-based power modules for automotive traction inverter applications. The collaboration aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration. Together, the firms intend to evaluate how a joint approach can enable high-performance, scalable solutions for next-generation electric vehicles...

Following publication of the UK Government’s AI Hardware Plan, to address a critical gap in UK AI infrastructure the Compound Semiconductor Applications (CSA) Catapult is to transition over this summer to become the Semiconductor Catapult, developed from its existing capability to focus on R&D for energy-efficient, deployable systems to accelerate the journey from AI research to real-world deployment, for data centers and industry...

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices...

WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — says that its NP12-0B process has been qualified for 40V operation...

Global aerospace propulsion, services and systems firm GE Aerospace of Evendale, OH, USA and Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — have entered into a memorandum of understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide across the industrial, aerospace and defense markets...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silicon carbide (SiC) MOSFETs and gate drivers based on their specific requirements. The interactive tool makes it easier to evaluate pairing behavior and trade-offs, helping to accelerate the development of power electronics designs. It also serves as the front door to onsemi’s broader simulation toolset for system-level performance and efficiency analysis...

Infineon Technologies AG and Siemens AG of Munich, Germany are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor (solid-state) circuit breakers. This will enhance the efficiency, power density and reliability of Siemens’ protection solution...

At the PCIM Europe 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 June), Fraunhofer Institute for Applied Solid State Physics IAF is presenting the latest developments in gallium nitride (GaN) power electronics...

Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has unveiled qDesign, an AI-driven generative design service that programmatically generates, simulates and iterates on QPTs patented qAttach thermal interface layer for any power module, replacing weeks of human-in-the-loop CAD and simulation cycles with AI-generated topologies and automated optimization...

Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has unveiled qDesign, an AI-driven generative design service that programmatically generates, simulates and iterates on QPTs patented qAttach thermal interface layer for any power module, replacing weeks of human-in-the-loop CAD and simulation cycles with AI-generated topologies and automated optimization...

As hyperscalers and enterprise operators race to build increasingly powerful AI infrastructure, power delivery and energy efficiency are emerging as the most critical constraints. Industry analysts estimate that AI rack power requirements could grow beyond 1MW/rack in the very near future...