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We took a step back and said, ‘OK, let’s invent the transistor for the quantum age, said Chetan Nayak, corporate VP of Quantum Hardware at Microsoft. He was talking about the company’s Majorana 1 chip, which marks a notable development in quantum computing. EDN’s sister publication EE Times takes a closer look at this chip’s topological qubit architecture while providing a technical glimpse of competing products: Google’s Willow processor and the University of Science and Technology of China’s Zuchongzhi 3.0 chip.

Read the full story at EE Times.

Related Content

• The Basics Of Quantum Computing
• Exploring the Frontiers of Quantum Computing
• Power supply management in quantum computers
• Hardware security entering quantum computing era
• How Intel Quantum Chips Could Retransform Silicon-Based Computing

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Nuvoton Technology Corporation Japan (NTCJ) has developed new industrial 17-cell BM-ICs “KA49701A” and “KA49702A” for 48V batteries. Mass production starts from April 2025. These products enhance the safety of battery systems and simple safe system construction.

Achievements:

1. By incorporating fault diagnosis and fail-safe functions within the battery monitoring IC(BM-IC), it is possible to build a safe system without external protection circuits. This contributes to improved safety of the Battery Management System (BMS) and reduced system costs.
2. Achieves industry-leading voltage measurement accuracy of +/-2.9mV, allowing maximum utilization of battery capacity.
3. Reduces current consumption during operation, enabling long battery drive times. Additionally, by reducing current consumption during shutdown, self-discharge is minimized, allowing for long-distance transportation and long-term storage of battery packs.

The expansion of renewable energy adoption and the development and expansion of data centers of generative AI are progressing. Energy storage systems responsible for stable power supply require larger capacity and higher output batteries. Consequently, the shift from traditional lead-acid batteries to smaller, lighter, and higher energy density lithium-ion batteries (LIB) is accelerating. However, LIBs are more expensive than lead-acid batteries and require systems to prevent fires, leading to increased manufacturing costs.

To address this challenge, we have developed a “48V BM-IC for Industrial Equipment ” equipped with fault diagnosis and fail-safe functions, leveraging our automotive battery control technology cultivated over many years. This product achieves both enhanced battery system safety and reduced system cost for LIB-equipped storage systems. Additionally, with an industry-leading voltage measurement accuracy of +/-2.9mV and low power consumption during both operation and shutdown (1/10 of our previous products), it maximizes battery capacity utilization.

Features:

1. By integrating fault diagnosis functions and fail-safe functions within the BM-IC, it is possible to build a safe system without external protection circuits. This contributes to improved safety of the BMS and reduced system costs.

The battery monitoring IC plays a role in ensuring the system operates safely during anomalies such as overcharging or over-discharging of the battery. However, if the main circuits performing cell voltage measurements such as the AD converter or multiplexer of the BM-IC fail, it needs to ensure system safety with external protection circuits, but this increases board area and system cost. The major internal circuits of this product are equipped with diagnostic functions and fail-safe functions. This diagnostic function can detect main circuit failures and control·the cut-off switch, achieving both enhanced BMS safety and reduced system cost.

2. Achieving industry-leading voltage measurement accuracy of +/-2.9mV allows maximum utilization of battery capacity.

By reducing noise levels on the 16-bit AD converter and incorporating a digital filter, we have achieved industry-leading voltage measurement accuracy of +/-2.9mV. By improving voltage measurement accuracy, maximum Battery capacity can be used. Furthermore, precise voltage measurement has been achieved over a wide temperature range. It is also suitable for applications requiring high voltage measurement accuracy in cold and hot environments, such as stationary battery systems compliant with the Chinese national standard.

3. Reducing current consumption during operation realizes long-term Battery operation. Additionally, by reducing current consumption during shutdown, self-discharge can be minimized, enabling long-distance transportation and long-term storage of battery packs.

By shortening the cell voltage measurement time, which has high power consumption, operating current has been achieved at 260μA, less than 1/10th of our previous standards. This enables long battery drive times. Also, optimization of the circuit design has reduced shutdown current consumption to 0.1μA or less. Using our IC, self-discharge can be minimized, preventing deterioration due to over-discharge when LIBs are transported over long distances and stored long-term.

Applications:

Battery systems (Energy Storage System), backup unit for data centers,

Automated guided robots, electric bicycles, drones, etc.

Product name:

BM-IC for industrial equipment

KA49701A, KA49702A

Model Number	KA49701A	KA49702A
Charge/discharge control method	Low-side switch	High-side switch
Maximum number of connected cells	17 cells
Rated voltage	85V
Voltage Measurement Accuracy	+/- 2.9mV
Current Measurement Accuracy	+/- 1.0%
Current Consumption (Operating)	260μA
Current Consumption (Shutdown)	0.1μA max
Battery monitoring IC KA49701A, KA49702A Package	QFP-48pin (7mm x 7mm)

 

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The European Commission today approved funding under the European Chips Act for the Infineon Technologies AG Smart Power Fab in Dresden. The official funding approval from the Federal Ministry for Economic Affairs and Climate Action (BMWK), which is responsible for the disbursement of EU Chips Act funding, is still pending and is expected within the next few months. Additionally, the Smart Power Fab is already receiving support under the European Commission’s IPCEI ME/CT (“Important Project of Common European Interest on Microelectronics and Communication Technologies”) innovation program. The total funding for the Dresden site amounts to around one billion euros. Construction began in March 2023 and is progressing successfully. The Fab opening is planned for 2026.

“This government-supported investment by Infineon strengthens the position of Dresden, Germany and Europe as a semiconductor hub and promotes a state-of-the-art innovation and production ecosystem for microelectronics,” says Jochen Hanebeck, CEO of Infineon. “We are increasing semiconductor capacity in Europe and thus helping secure stable supply chains in automotive, security and industrial fields.”

Infineon is investing a total of five billion euros in the expansion of its Dresden site. The German federal government previously approved the early start of the project. The new development will create up to 1,000 new jobs, not including the additional jobs created in the ecosystem of the investment. Experts assume a positive job effect of 1:6. The core of the Smart Power Fab will focus on technologies that further accelerate decarbonization and digitalization for example by driving energy-efficient power solutions for Artificial Intelligence.

In addition to the funding for the expansion of manufacturing in Dresden, Infineon is also leveraging the IPCEI ME/CT innovation program to drive investments in research and development at other corporate locations. Between 2022 and 2027 Infineon will have invested 2.3 billion euros in innovation projects at its sites in Germany and Austria, concentrated in the fields of power electronics, analog/mixed-signal technologies, sensor technologies and radio frequency applications.

As part of the EU funding programs, Infineon is furthermore planning comprehensive measures to promote partnership between science and industry. A central element is close collaboration with European universities, research institutions and start-ups. Infineon offers talented young individuals a platform for developing and advancing sustainable innovations. These activities promote the hands-on application of scientific knowledge and strengthen Europe’s position as an innovation hub.

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Ranging from 22V to 200V and supporting different radiation levels, TI’s new family of gate drivers enables designers to improve power system efficiency for every type of space mission

What’s new

National, 20 February 2025: Texas Instruments (TI) today announced a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers. This family of gate drivers includes the industry’s first space-grade GaN FET driver that supports up to 200V operation. The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. TI’s advancements in space-grade power products enable engineers to design satellite power systems for all types of space missions using just one chip supplier.

Why it matters

Satellite systems are growing increasingly complex to meet the demand for more on-orbit processing and data transmission, higher-resolution imaging, and more precise sensing. To improve mission capabilities, engineers strive to maximize electrical power system efficiency. TI’s new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This allows a satellite to more effectively use the power generated by its solar cells to perform mission functions.

“Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI. “Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”

For more information, read the technical article, “How you can optimize SWaP for next-generation satellites with electronic power systems.”

More details

Optimizing size, weight and power (SWaP) using GaN technology can:

• Improve electrical system performance.
• Extend mission lifetimes.
• Reduce satellite mass and volume.
• Minimize thermal management overload.

Designers can use the family for applications spanning the entire electrical power system.

• The 200V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels.
• The 60V and 22V versions are intended for power distribution and conversion across the satellite.

TI’s family of space-grade GaN FET gate drivers offers different space-qualified packaging options for the three voltage levels, including:

• Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, respectively.
• Radiation-tolerant Space Enhanced Plastic (SEP) products.

John Dorosa, a TI systems engineer, will present “How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge” on Tuesday, March 18, 2025, at 9:20 a.m. Eastern time at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature TI’s TPS7H6003-SP gate driver.

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In the evolving 5G landscape, channel-state information (CSI) is essential for optimizing network performance and user capacity. CSI enables efficient channel-dependent scheduling and adaptive modulation, ensuring robust high-speed communications between base station and mobile device. AI/ML- driven CSI enhancements promise even greater efficiency, reduced overhead, and improved user experience in 5G-Advanced and future 6G networks. However, implementation across vendors will be challenging. Rohde & Schwarz and Qualcomm Technologies have achieved an industry milestone by demonstrating cross-vendor interoperability of ML-based CSI feedback enhancements, to be showcased at MWC 2025 in Barcelona.

Rohde & Schwarz today announced the successful validation of machine learning-based channel-state information feedback compression for 5G-Advanced networks with support from Qualcomm Technologies, Inc., demonstrating a significant increase in throughput compared to conventional methods. This breakthrough confirms the feasibility of cross-vendor AI implementation in wireless communications with the aim of enhancing network performance.

The two companies achieved interoperability between ML models running on a mobile form factor reference design powered by a Qualcomm® 5G Modem-RF and the CMX500 5G one-box signaling tester from Rohde & Schwarz, implementing enhanced CSI feedback mechanisms studied in 3GPP Release 18 and 19. The setup enables efficient compression of the channel state based on CSI reference signal (CSI-RS) measurements, optimizing massive MIMO operations critical for 5G networks. This validation demonstrated that the throughput performance improved by 51% compared to Type I feedback followed by wideband precoding, as defined in 3GPP Release 15.

Both parties employed separate training approaches for AI models on the network and device side. Compatibility was achieved through specified reference models. Utilizing autoencoder architecture, Qualcomm Technologies implemented a proprietary device encoder, while Rohde & Schwarz developed a decoder for its network emulator. The CMX500 one-box tester supports flexible ML model integration through the Open Neural Network eXchange (ONNX) format, enabling users to implement and validate their own AI architectures for wireless testing scenarios.

Cross-vendor interoperability as milestone for future standardization

The successful interoperability proves that two-sided ML-based air interface enhancements can be effectively implemented and tested across equipment coming from different vendors. It is a significant step toward implementing AI-enhanced wireless communications, providing a framework for testing and verification essential for the commercial deployment of 5G-Advanced features. It also serves as a crucial milestone for the upcoming standardization for a future 6G standard, where AI is expected to be natively integrated into the air interface design from the beginning. Hence, cross-vendor AI interoperability will be an essential foundation for future wireless systems.

Christoph Pointner, Senior Vice President of Mobile Radio Testers at Rohde & Schwarz, says: “The capability of our CMX500 to implement and validate ML-based signal processing highlights the need for evolving test and measurement alongside wireless innovation. Thanks to ONNX support, customers can integrate their own ML architectures, making the CMX500 a versatile platform for AI-enhanced wireless testing. Validating interoperability with Qualcomm Technologies’ encoder confirms our commitment to establishing essential verification frameworks for AI-driven communications, from 5G-Advanced to future 6G systems.”

John Smee, Senior Vice President, Engineering, Qualcomm Technologies, Inc. adds, “In this new 5G- Advanced era of connectivity, and as we look toward 6G, AI is even more critical not just for the best user experiences but also for network performance. The joint research between Qualcomm Technologies and Rohde & Schwarz validates that AI-based CSI will help ensure these performance enhancements.”

Rohde & Schwarz will present the CSI feedback enhancements demonstration together with Qualcomm Technologies live at Mobile World Congress 2025 at Fira Gran Via in Barcelona in hall 5, booth 5A80. A video preview of the demonstration is available here:

https://www.rohde-schwarz.com/_251220-1545553.html

For further information on Rohde & Schwarz solutions for AI and ML in 6G networks, visit: www.rohde-schwarz.com/6G-AI-ML

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Integrated AI capabilities, rugged design, and with quick access expansion, the BOXER-6647-MTH sees AAEON corner the advanced robotics market.

Leading provider of industrial PC solutions AAEON, has introduced the BOXER-6647-MTH, a fanless embedded computer powered by the Intel Core Ultra platform. Available with either the Intel Core Ultra 7 processor 155H or Intel Core Ultra 5 processor 125H, the BOXER-6647-MTH sports a broad variety of interfaces tailored for industrial robotics use.

The system hosts LAN ports providing up to 2.5GbE speed, six USB (four USB 3.2 Gen 2, two USB 2.0), and three serial ports that include dual RS-232/422/485 signals and an 8-bit DIO, the BOXER-6647-MTH’s I/O provides a strong foundation with which systems integrators can install cameras, sensors (LIDAR, IMUs), and actuators for advanced robotics applications like AGVs and AMRs. Moreover, the system boasts a wealth of expansion options to accommodate Wi-Fi, 5G, and NVMe storage modules.

The mechanical design of the BOXER-6647-MTH offers a number of unique features, including external SATA and M.2 M-Key device trays that allow users to swap, upgrade, or replace SATA and M.2 NVMe storage devices without the need to open the system or use tools to configure. A second change to what users will have become accustomed to with AAEON’s fanless embedded PC line is its fully sealed chassis panels. Previous products from the selection required additional vents on the system side panel in order to ensure adequate heat dissipation, the BOXER-6647-MTH compensates for this with a more efficient and effective heatsink.

Despite its ventless chassis, the BOXER-6647-MTH remains relatively compact at 220mm x 154mm x 62.1mm, while also maintaining a -20°C to 60°C temperature range. The system can operate in industrial environments with fluctuating power supplies, with a 9V to 36V power input range via a 3-pin terminal block connector, while also receiving protection from damage during operation thanks to both shock and vibration resistance features.

With respect to its OS, the BOXER-6647-MTH supports Windows 11 Pro and Windows 11 IoT Enterprise, as well as Linux Ubuntu 22.04.

For detailed specifications, please visit the BOXER-6647-MTH’s product page on the AAEON website, or contact an AAEON representative.

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ATMXT3072M1 and ATMXT2496M1 single-chip touchscreen controllers bring reliable and secure touch detection to automotive displays including emerging OLED and microLED technologies

Automakers are revolutionizing the driving experience with innovative smart cockpit designs that feature large displays and emerging technologies like Organic Light Emitting Diodes (OLEDs) and microLEDs, seamlessly blending functionality with brand identity. However, these advancements pose significant challenges for the integration of capacitive touch sensing, especially with the thinner stack-up and an increasing number of touch electrodes. To address these challenges, Microchip Technology has launched the ATMXT3072M1 and ATMXT2496M1 touchscreen controller families to help provide automotive HMI designers with reliable touch solutions. The single-chip touchscreen controllers feature up to 112 reconfigurable touch channels—or 162 equivalent touch channels in ultra-wide mode— enabling the support of large, curved and free-form touch displays up to 20 inches in 16:9 format and 34 inches in 7:1 format.

Large thin displays, such as on-cell OLED, embed touch electrodes with higher capacitive loads and stronger coupling of display noise, increasing the risk of false or missed touch detections. As part of the maXTouch touchscreen controller family, the new devices employ Microchip’s proprietary Smart Mutual touch acquisition method and algorithms to increase the touch Signal-to-Noise Ratio (SNR) by up to +15 dB compared to the previous generation.

“The size and appearance of automotive cockpit displays can significantly influence a buyer’s perception of the vehicle’s technological sophistication. However, integrating reliable touch functionality into advanced displays can present significant challenges,” said Patrick Johnson, senior corporate vice president overseeing Microchip’s human machine interface division. “Our ATMXT3072M1 and ATMXT2496M1 touchscreen controllers address these challenges with innovative sensing algorithms for fast and reliable touch performance. This enables automakers to design cutting-edge, visually stunning and user-friendly interfaces that enhance both the driving experience and vehicle safety.”

ATMXT3072M1 and ATMXT2496M1 controllers are designed to be compliant with ASIL-A and B standards and are developed according to Microchip’s ISO26262 Functional Safety Management System, which is certified by TÜV Rheinland. Failure Modes, Effects and Diagnostic Analysis (FMEDA) and safety manuals are also available to help customers achieve certification for their systems’ touch functionality more efficiently and cost-effectively. The touch controllers’ firmware is upgradable by the automobile’s main computer system and can be verified using the integrated firmware authentication feature, which implements the SHA-512 cryptographic hash function. This cybersecurity function enables reliable Over-the-Air (OTA) updates in compliance with ISO 21434:2021 standards.

To limit eyes-off-road time and promote safer driving, the Euro NCAP tests in 2026 will likely encourage manufacturers to use separate physical controls for basic functions. Microchip’s Knob-on-Display (KoD) technology allows for the addition of intuitive physical knobs on the touchscreen, improving safety while preserving the sleek look of modern vehicle displays. Additionally, implementing haptic feedback on the touchscreen is a recognized method for reducing driver distraction. The new maXTouch M1 Generation touchscreen controller features dedicated functions, such as the Shape Event Trigger combined with automated pattern Pulse Width Modulation (PWM), to achieve ultra-low-latency haptic control. This innovation transfers the decision-making and generation of haptic waveforms from the main application host processor to the touchscreen controller.

Visit the maXTouch M1 Generation family webpage to learn more about the key features of Microchip’s touchscreen controller solutions.

Development Tools

The comprehensive EV01S50A development printed circuit board (PCB) was designed for the ATMXT3072M1 touchscreen controller family to enable customers to more easily evaluate and test the devices in their applications. The EV13B92A evaluation kit includes a 15.6” ITO touch sensor.

Availability

For additional information and to purchase, contact a Microchip sales representative or authorized worldwide distributor.

The post Microchip Extends maXTouch M1 Generation Family To Support Large, Curved and Shaped Automotive Displays appeared first on ELE Times.

Just got my new peak transistor tester and showing and old vintage one from a long dead friend of mine. submitted by /u/Anxious_Technician41 [link] [comments]

Infineon is advancing industry-wide standardization by offering its CoolGaN Generation 3 (G3) transistors in silicon MOSFET packages. The IGD015S10S1 100-V transistor will be housed in a 5×6-mm routable QFN (RQFN) package, while the IGE033S08S1 80-V variant will come in a 3.3×3.3-mm RQFN package.

These two CoolGaN G3 transistors, compatible with industry-standard silicon MOSFET packages, enable easy multi-sourcing and complementary layouts for silicon-based designs. The 100-V IGD015S10S1 provides a typical on-resistance of 1.1 mΩ. The 80-V IGE033S08S1 has a typical on-resistance of 2.3 mΩ. Their new packages, combined with GaN technology, ensure low-resistance connections and minimal parasitics.

Infineon’s chip and package combination enhances robustness in thermal cycling and improves thermal conductivity. The larger exposed surface area and higher copper density aid in better heat distribution and dissipation.

Samples of the IGE033S08S1 and IGD015S10S1 GaN transistors in RQFN packages will be available in April 2025. For more information, click here.

Infineon Technology

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Low-power 32-bit MCUs in the Renesas RA4L1 group integrate a segment LCD controller, capacitive touch sensing unit, and robust security. Based on an 80-MHz Arm Cortex-M33 processor with TrustZone support, the MCUs can be used for metering, IoT sensing, smart locks, and home appliances.

RA4L1 microcontrollers operate down to 1.6 V, consuming 168 µA/MHz when active and just 1.70 µA in standby mode with all SRAM retained. The series, which comprises 14 devices, offers 256 KB or 512 KB of dual-bank code flash, 64 KB of SRAM, and 8 KB of data flash. They provide a variety of peripherals and a wide range of communication interfaces.

In addition to Arm Trust Zone, the MCUs feature Renesas Secure IP (RSIP-E11A) supporting AES, ECC, hash value generation, and a 128-bit unique ID. They offer up to three tamper pins and secure pin multiplexing. The devices come in a variety of small packages, including a 3.64×4.28-mm WLCSP.

The RA4L1 MCUs, along with an evaluation board and capacitive touch starter kit, are available now. Samples and kits can be ordered from the Renesas website or distributors.

RA4L1 series product page

Renesas Electronics

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Compact and lightweight, the R&S ADD507 direction finding (DF) antenna covers 9 MHz to 8 GHz, reducing the need for multiple antennas. Expanded VHF coverage improves weak signal detection, making the antenna well-suited for mobile interference hunting, emitter tracking, and close-range monitoring.

The ADD507 features active and passive antenna elements with an active/passive switch that adjusts to the signal environment with a mouse click. Passive mode bypasses all active components, boosting resistance to strong unwanted signals.

Antenna polarization is vertical, and system DF accuracy is typically 2° RMS in a reflection-free environment. The AD507 is approximately 0.33×0.27 m (13×10.63 in.) and weighs about 4.5 kg (9.9 lb). An optional vehicle adapter with a magnetic mount simplifies roof mounting.

To request pricing information for the ADD507 DF antenna, use the product page link below.

ADD507 product page

Rohde & Schwarz 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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The RClamp10022PWQ two-line transient voltage suppressor (TVS) from Semtech safeguards automotive Ethernet interfaces against ESD. It meets Open Alliance standards for 10Base-T1S, 100Base-T1, and 1000Base-T1, ensuring reliable Ethernet connectivity for advanced driver assistance systems and autonomous driving.

Leveraging solid-state silicon avalanche technology, the bidirectional TVS offers a trigger voltage greater than 100 V and a deep snap-back characteristic to minimize ESD clamping voltage. The RClamp10022PWQ provides ±15-kV contact (1000 discharges) and ±25-kV air discharge protection per IEC 61000-4-2, surpassing automotive requirements. Its low capacitance of 0.6 pF maximum ensures signal integrity in high-speed networks.

AEC-Q101 qualified, the RClamp10022PWQ operates over a temperature range of -40°C to +125°C. It comes in a 5-lead, 2.0×1.0×0.55-mm DFN package with side wettable flanks for automated optical inspection.

RClamp10022PWQ product page

Semtech

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Frontgrade has successfully screened its GaN DC/DC converter and complementary EMI filter to MIL-PRF-38534 Class L requirements. Under the Defense Logistics Agency’s specification, Class L screening ensures these devices meet stringent performance requirements for space missions, from Low Earth Orbit (LEO) to Geostationary Earth Orbit (GEO).

The 51028xxx series of 28-V single-stage converters uses GaN FET technology for efficient power conversion, achieving 93% efficiency at half load. With faster switching and enhanced performance, the GaN-based devices respond quickly to dynamic power demands and provide multiple voltage outputs from 0.8 V to 12.0 V. Direct power conversion from the bus to the point of load ensures optimal performance for both current and future space applications.

Frontgrade’s 51028xxx converters are efficient isolated step-down regulators rated at 50 W, with a total dose radiation tolerance of 50 krads (Si) and immunity to SEL/SEB/SEGR up to 60 MeV-cm²/mg. Output voltage remote sense provides accurate point-of-load voltage regulation.

Flight and engineering modules, along with evaluation test boards, are available to support development, testing, and deployment in mission-critical spacecraft systems.

51028xxx series product page

Frontgrade Technologies

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With the exponential growth of AI computing needs, challenges arise in performance and energy efficiency across computing, memory, power supply and the interconnections linking them. STMicroelectronics of Geneva, Switzerland says that it is helping hyperscalers, and the leading optical module provider, to overcome these challenges by unveiling its next generation of proprietary technologies for higher-performing optical interconnect in data centers and AI clusters. Its new silicon photonics and next-gen BiCMOS technologies are scheduled to ramp up from second-half 2025 for 800Gb/s and 1.6Tb/s optical modules...

In today’s world, motors are ubiquitous, powering everything from household appliances to industrial machinery. The importance of optimizing motor control for energy efficiency cannot be overstated, given that motors account for a significant portion of global energy consumption. This article delves into the structure of motors, the use of variable frequency drives (VFDs), and the solutions for motor control applications, including hardware support and advanced algorithms.

The prevalence of motors

Motors are integral to our daily lives, found in household appliances like washers, dryers, dishwashers, and pool pumps. They are also essential in automotive applications, with modern cars containing anywhere from 40 to 100 motors, depending on the model and trim level. Industrial environments are heavily reliant on motors, particularly in robotics and factory automation. Figure 1 shows the range of motor applications from household appliances to automotive and industrial.

Figure 1 The range of applications involving motors highlights the prevalence of this technology and thus the importance of considering their energy consumption and efficiency. Source: Microchip

According to the Energy Information Administration, approximately 50% of global energy consumption is attributed to motors. In industrial applications, this figure can exceed 80%. For instance, in the United States, the total energy consumption in 2022 was 4.07 trillion kilowatt-hours, equating to a daily consumption of 11.2 billion kilowatt-hours. Improving motor efficiency by just 1% could save 56 million kilowatt-hours of energy daily.

Key trends in motor efficiency

Figure 2 shows the four avenues to improve motor efficiency: energy efficiency motors, the use of drives and better electronics, advanced algorithms, and the integration of IoT. This section will touch upon these four topics and go into more detail.

Figure 2 The four avenues to improve motor efficiency: energy efficiency motors, the use of drives and better electronics, the integration of IoT, and advanced algorithms. Source: Microchip

Energy efficient motors

One of the primary trends in motor efficiency is the transition from traditional motors, such as AC induction motors, to more efficient types like brushless DC (BLDC) motors, permanent magnet synchronous motors (PMSM) and interior permanent magnet (IPM) motors. These motors offer higher efficiency and improved performance. Additionally, advancements in materials, such as the use of amorphous metals and rare earth magnets, have further enhanced motor efficiency.

Material advancements

In the realm of motor technology, advancements in materials and design have significantly enhanced the efficiency and performance of motors over the past century. As shown in Figure 3, a motor typically consists of end bells, a rotor, bearings, and a stator with windings.

Figure 3 The basic structure of a motor where rotor and stator coils materials have shifted from aluminum to copper. Source: Microchip

Over the years, the materials used in these components have evolved. For instance, the transition from aluminum to copper in the rotor and stator coils has improved conductivity and efficiency. Additionally, advancements in manufacturing tolerances have reduced noise and further increased efficiency.

One notable trend in motor technology is the use of amorphous materials in rotors and stators. Traditionally, silicon steels were used, but they had high eddy current and hysteresis losses. These are now being replaced by amorphous materials like metallic glasses, which have lower losses and thus higher efficiency.

For permanent magnet motors, stronger magnets, such as those made from rare earth materials like neodymium, iron and boron, provide more torque and efficiency. However, due to sustainability concerns, alternatives like aluminum, nickel, chromium, and ferrite-based magnets are being explored for their good properties over a range of temperatures and strong magnetic fields.

Motor structure

The transition from journal bearings to ball bearings has played a significant role in reducing friction and improving tolerances, thereby enhancing motor efficiency. Over the past century, motors have become considerably smaller while maintaining the same power output. As shown in Figure 4, a modern 5-horsepower, squirrel-cage rotor, three-phase induction electric motor (SCIM) is substantially smaller and weighs approximately 20% of what a motor with the same power rating did in 1910. This reduction in size can be attributed to the use of lighter and more efficient materials, as well as advancements in thermal and electrical insulation.

Figure 4 A timeline of the reduction in mass for a 3.7 kW SCIM motor from 1910 to 2020. Source: Hitachi

Lighter motors are particularly beneficial for automotive applications, where reducing weight can lead to increased efficiency and the ability to integrate motors into more compact spaces. As we continue to explore new materials and designs, the potential for even greater efficiency and performance in motor systems remains promising.

Variable frequency drives

Variable frequency drives (VFDs) have become increasingly popular for controlling motor speed and improving efficiency. VFDs adjust the motor’s speed to match the load requirements, reducing energy consumption. The transition from insulated gate bipolar transistors (IGBTs) to silicon carbide (SiC) and gallium nitride (GaN) technology in VFDs has also contributed to higher efficiency and faster switching.

VFD impact

Variable Frequency Drives (VFDs) have revolutionized motor control by allowing precise control over motor speed and torque. This technology optimizes motor performance and significantly improves system efficiency. A VFD adjusts the frequency and voltage supplied to the motor, enabling it to operate at the most efficient point for a given load.

For instance, traditional motor systems often operate at full power, with flow rates controlled by throttling valves, leading to substantial energy losses. In contrast, VFDs eliminate the need for throttling by adjusting the motor speed to match the required flow rate, thereby reducing energy consumption and increasing overall system efficiency. As shown in Figure 5, studies have shown that switching to a VFD can more than double the efficiency of a motor system, from around 31% to 72%.

Figure 5 Switching to a VFD can more than double the efficiency of a motor system, from around 31% to 72%. Source: [1]

Motor control hardware

As shown in Figure 6 a range of power management devices are necessary to effectively benefit from VFDs.

Figure 6 Basic block diagram of supporting power management devices for motor control. Source: Microchip

AC-DC converters utilizing SiC in tandem with gate drivers enable precision switching for efficient power conversion. MCUs with motor-specific peripherals and specialized algorithms, e.g. dsPIC33 digital signal controllers (DSCs), can be optimized to convert DC to variable AC. Finally, integrated sensors offer real-time feedback on current, voltage and temperature, enhancing system reliability.

Advanced control algorithms

Traditional methods, such as V/F control for AC induction motors, are cost-effective and straightforward but may not offer the highest efficiency. More advanced algorithms, such as six-step commutation for BLDC and PMSM motors, can offer sensor or sensor-less precision torque control. Field-oriented control (FOC), for example, uses a single-cycle MAC with data saturation as well a zero overhead looping and barrel shifting for high performance speed, position, and torque control. Figure 7 shows a sample block diagram for FOC of a motor using the least FPGA resources to execute a full motor control algorithm.

Figure 7 The block diagram for modular sensorless BLDC motor control algorithm using coordinate rotation digital computer (CORDIC) with sine-cosine required for FOC of motors. Source: Microchip

The Zero-Speed/Maximum-Torque (ZS/MT) control algorithm is a new variation of the sensorless FOC algorithm that enables the adoption of sensorless control techniques in high-torque or low-speed motor control applications. ZS/MT eliminates the need for Hall effect sensors by using a reliable initial position detection (IPD) method based on high-frequency injection (HFI) to determine the exact rotor position at zero and low speeds, making it ideal for applications like drilling machines, garage door openers, automotive starters and e-bikes.

Integration with IoT and AI/ML

The integration of IoT and AI technologies has revolutionized motor control. Sensors are used to detect current, torque, and rotor position, among other parameters, information that is then fed to MCUs for processing. With the integration of ML, these systems can perform predictive maintenance by analyzing sensor data to predict potential motor failures or maintenance needs.

Predictive maintenance ensures that motors operate at peak efficiency and performance, reducing the likelihood of unexpected breakdowns. By continuously analyzing parameters such as current, torque and vibration, predictive maintenance ensures efficient motor operation and minimizes downtime. Systems can, for instance, employ a classification model to determine the operational state of a motor, identifying whether it is functioning normally or experiencing anomalies such as an unbalanced load or a broken bearing, by monitoring the quiescent current of the motor.

Optimizing motor control

Optimizing motor control for energy efficiency is crucial for reducing global energy consumption and improving the performance of various applications. By transitioning to efficient motors, utilizing VFDs, implementing advanced control algorithms and integrating IoT and AI technologies, significant energy savings can be achieved. As the demand for energy-efficient solutions continues to grow, advancements in motor control technology will play a vital role in meeting these needs.

Pramit Nandy is a product marketing manager at Microchip Technology Inc., focused on motor control applications. Nandy has been with Microchip since 2021 and his previous experience includes a product marking manger position with Onsemi. He holds a master’s degree in electrical engineering from Arizona State University.

Reference

1. T. de Almeida, F. J. T. E. Ferreira and D. Both, “Technical and economical considerations in the application of variable-speed drives with electric motor systems,” in IEEE Transactions on Industry Applications, vol. 41, no. 1, pp. 188-199, Jan.-Feb. 2005, doi: 10.1109/TIA.2004.841022.

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The post Optimizing motor control for energy efficiency appeared first on EDN.

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced a family of three 1200V SiC full-bridge modules, each integrating two of the company’s rugged high-speed switching SiC MOSFETs with reliable body diode...

BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has received an AUS$120,000 order for semi-custom GaN laser diode bar products from a repeat customer, the College of Optics and Photonics (CREOL) at the University of Central Florida...

Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent requirements which preclude a ‘copy-paste’ of regular logic transistor process flows.

One critical requirement imposed by present DRAM chip architectures is the ability of the periphery to withstand thermal treatments at 550-600°C and above. While the first part of this article series focused on DRAM basics and peripheral circuits, this part will provide a detailed account of DRAM periphery, explaining different generations of thermally stable peripheral transistor technology ranging from planar high-k/metal-gate transistors to FinFETs.

DRAM periphery: From SiON-based gate stacks to high-k/metal gates

Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO2 or poly-Si/SiON gates. These technologies were less advanced than the transistors used for high-performance logic in order to maintain the DRAM cost-per-bit trendline.

However, an improved technology for the periphery became necessary to keep pace with the performance enhancement enabled by subsequent generations of DRAM memory. The most obvious candidate was moving to a planar transistor architecture with a high-k/metal-gate stack—a transition that occurred as early as 2007 in the high-volume manufacturing of logic technologies.

Since about 2007, imec, together with its partners, has actively explored a DRAM-compatible version of high-k/metal-gate transistors and proposed multiple material and integration options to the memory industry. Today, almost every device with a DRAM memory inside contains a planar peripheral transistor technology with high-k/metal gates, which imec has been pioneering for more than 15 years.

Below is a grasp of some of the proposed material, module, and integration options, all differing in fabrication complexity and performance levels.

High-k/metal-gate integration: Thermally stable gate-first and gate-last integration flows

One of the solutions demonstrated by imec for potential early introduction was based on a gate-first integration approach, in which the metal gate is deposited before the high-temperature source/drain junction activation anneal. Gate stacks for nMOS and pMOS can be optimized separately by using different work function metals and layer thicknesses for the high-k/metal-gate stack (for example, TiN/Mg/TiN for n; TiN for p).

One of the critical parameters is obtaining an effective work function that is low enough for nMOS and high enough for pMOS to ensure a good Ion/Ioff ratio. Researchers achieved this by doping the gate stacks (with different dopants for pMOS and nMOS), which enabled a shift in the threshold voltages.

The choice of the dopant materials and their integration also provided a knob for improving the thermal stability of the gate stack and enabling the different Vth required by the DRAM chip. The DRAM-specific requirement for low gate leakage was addressed, among others, by adopting thicker gate stacks compared to logic-oriented solutions.

Figure 1 Sketch of the critical fabrication steps is shown in a gate-first integration approach for planar high-k/metal-gate peripheral transistors. Source: PSS

Imec also successfully demonstrated a thermally improved version of a gate-last integration approach, also called replacement metal gate (RMG) flow. In a gate-last flow, a poly-Si capped dummy gate is deposited and remains in place until the junction activation anneal is applied. After that, the dummy poly is replaced by the target metal gate.

Optimized source/drain junctions

Source/drain junctions are critical to ensure the functionality of MOSFET transistors. They are formed by creating a dopant gradient in the source/drain areas. As conduction channel lengths continued to shrink, ultra-shallow junctions became indispensable to ensure good electrostatic control over the channel. However, for peripheral transistors, the thermal treatments during DRAM memory anneal trigger an unwanted diffusion of the dopants, requiring more complex process flows to maintain the dopant gradient.

This issue can be addressed by changing the junction implant scheme using, for example, pre-amorphization implants and junction co-implants. Imec demonstrated several sets of optimized junctions suited for various threshold voltage targets.

A thermally stable silicide process

A general challenge for all transistors is to keep the source/drain contact resistance as low as possible. Source/drain contacts are formed by bringing a metal in contact with the source/drain regions, creating a Schottky barrier at the interface.

To ensure low resistance, two techniques are typically applied: (1) heavy doping of the source/drain regions and (2) complete silicidation of the source/drain areas—the silicides being formed through the reaction of the contact metal with the doped Si.

However, Ni(Pt) silicide, traditionally used in logic devices, cannot withstand the DRAM-related anneal temperatures. Imec proposed a thermally stable NiPt-based silicide module with low contact resistance by implementing additional implants and annealing steps for silicide stabilization.

Thermally stable, FinFET-based peripheral platform

Applications like automotive, artificial intelligence (AI) and machine learning (ML) impose increasingly stringent requirements on DRAM memories, driving the need for faster, more reliable and power efficient peripheral transistors. One option is to retrace the path of ‘logic’ and move from planar high-k/metal-gate transistors to FinFETs.

The logic roadmap made this transition as early as 2011 after R&D clearly showed the superior performance of transistors with fin-shaped conduction channels: improved Ion/Ioff, better short channel control, higher drive current at reduced footprint (due to a higher effective width of the channel), and lower power consumption—while keeping cost under control. On top of that, the use of tall fins provides a way to reduce the threshold voltage mismatch, which can particularly benefit the DRAM sense amplifiers.

Just like for the planar versions, the DRAM-specific requirements preclude a copy-paste of FinFET process flows developed for regular logic. In response, imec developed a thermally stable FinFET-based peripheral technology platform with integrated modules optimized for DRAM. Multiple flavors with different performance-cost trade-offs have been proposed to the industry for their next-generation DRAM products.

Thermally stable gate-first and gate-last FinFET integration flows

In 2021, imec reported the first experimental demonstration of a thermally robust integration flow for FinFETs using an optimized gate-first approach for implementing the high-k/metal-gate stack. Compared to a traditional gate-first approach, the modified flow implements gate stacks with the same thickness and the same work function metal for both nMOS and pMOS. So-called Vth shifter materials are then diffused into the high-k dielectric to tune the effective work function of the nMOS and pMOS devices.

This modified gate-first approach reduces the gate asymmetry and enhances the thermal stability of the flow. By using this flow, the researchers demonstrated improved Ion/Ioff and short channel control over planar high-k/metal-gate counterparts. These metrics did not degrade after the DRAM-specific anneal. Flavors with taller fins (with up to 80-nm height) have also been developed, with improved threshold voltage mismatch and area gain.

Figure 2 Example of a fabricated high-k/metal-gate fin displays transmission electron microscope (TEM) cross sections for 40-nm, 65-nm, and ~80-nm tall fins. Source: imec

A drawback of the gate-first integration approach is the relatively high threshold voltage, which originates from the impact of the high-temperature anneal on the gate stack during junction activation. This issue can be solved using a gate-last (or RMG) integration approach, which, however, comes with additional process steps. At IEDM in 2022, imec showed a thermally stable version of a FinFET gate-last flow.

Figure 3 The above image shows a selection of relevant process step for the proposed gate-last process flow for thermally stable FinFETs. Source: 10.1109/IEDM45625.2022.10019422

An optimized and thermally stable gate-last FinFET flow with a Mo-based work function metal for pMOS

Typical for a gate-last flow is the use of different work function metals for nMOS and pMOS devices. At VLSI in 2024, imec demonstrated the performance benefits of using a novel Mo-based work function metal for pMOS instead of the conventional TiN-based approach. The new gate stack module was successfully integrated into a gate-last FinFET flow and proven to be thermally stable.

The DRAM-compatible flow with integrated Mo-based p-work function metal yielded sufficiently low Ioff current and low threshold voltage (0.12 V) for the pMOS devices. The FinFETs were also benchmarked against a thermally stable planar high-k/metal-gate reference, showing a three times higher Ion (at target Ioff) for the same Si footprint. These results make the thermally stable gate-last FinFET flow a valuable candidate for sub-10 nm DRAM peripheral logic.

Figure 4 On left and middle are TEM images across fins on a ring oscillator and on right is elemental mapping across gate (EDS) showing CMOS patterning and decent conformality of the Mo-based p-work function metal stacks. Source: VLSI 2024

Thermally stable Nb-based metal contacts with low contact resistance

In earlier work on planar high-k/metal-gate based peripheral transistors, imec researchers lowered the source/drain contact resistance by improving the dopant profile and adding pre-amorphization implants. At IEDM in 2024, imec introduced a different approach: replacing the conventional Ti contact metal with Nb for pMOS devices.

The thermal stability of the Nb-based contact module was demonstrated for the first time. In addition, superior performance was observed when integrated into the gate-last FinFET platform: record low contact resistance, reduced overall parasitic resistance, and improved Ion.

Figure 5 The above chart shows a comparison of the contact resistivities of Ti- and Nb-based contact modules (different thicknesses) for before and after DRAM anneal. Source: IEDM 2024

Ahead of DRAM mass production

Imec pioneered peripheral transistor technology 10 years ahead of the industry’s mass production introduction. In its most recent R&D work, imec demonstrated an industry-relevant, thermally stable FinFET-based platform to meet the requirements for sub-10 nm DRAM. Multiple flavors have been developed as possible solutions for next-generation DRAM products, providing different levels of fabrication complexity and transistor performance.

More disruptive concepts are envisioned in the longer term to continue the DRAM scaling path. One of these is building the periphery on a separate wafer and integrating it with the memory array using advanced wafer bonding techniques. Although this approach comes with additional process steps, a true benefit is the relaxed requirement for thermal stability, as the periphery is now manufactured separately from the memory array.

Imec recently initiated R&D work on peripheral transistors for this new DRAM architecture, guided by insights obtained from planar and FinFET-based technology.

Alessio Spessot, technical account director, has been involved in developing advanced CMOS, DRAM, NAND, emerging memory array, and periphery during his stints at Micron, Numonyx, and STMicro.

Naoto Horiguchi, director of CMOS device technology at imec, has worked in Fujitsu and the University of California Santa Barbara while being involved in advanced CMOS device R&D.

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The post A new platform for thermally stable DRAM peripheral transistors appeared first on EDN.

India’s Focused Show for Robotics, Smart Manufacturing, India Manufacturing Week, Technologies, Materials, Composites and Engineering, Product Design

The India Manufacturing Week 2025 is set to be a landmark event for India’s manufacturing sector, bringing together industry leaders to explore the latest advancements in digitalization, automation, robotics, additive manufacturing (3D printing), innovative materials, and design technologies. This three-day event will showcase cutting-edge solutions for smart, lean, and high-volume production.

With participation from top IT solution providers, the expo will offer valuable insights on optimizing production processes, reducing costs, and integrating advanced systems like ERP, MES, IIoT, and CIM. It’s the perfect platform for C-level executives, industry experts, and government representatives to connect and drive digital transformation in manufacturing.

India’s manufacturing landscape is rapidly evolving with the rise of Industry 4.0, fueled by the integration of IoT, AI, robotics, and data analytics. These advanced technologies enable seamless communication between machines, devices, and people, driving automation and significantly improving operational efficiency.
The shift to smart manufacturing is not only enhancing productivity and reducing costs but also improving product quality and enabling faster responses to market demands.

The post “About India Manufacturing Week 2025” appeared first on ELE Times.

Kyocera has developed an innovative mmWave phased array antenna module (PAAM) that simultaneously creates multiple beams in different directions at different frequencies. These PAAMs will be used in 5G FR2 infrastructure installations, enabling for example site co-location of different operators running networks on different frequency bands. To ensure optimal beam steering and beam directivity of their groundbreaking product, Kyocera relies on CATR-based multi-reflector OTA testing technology from Rohde & Schwarz.

Kyocera and Rohde & Schwarz will showcase at MWC 2025 in Barcelona the characterization of a novel mmWave PAAM design for FR2 applications. Crucial to the demonstration at the Kyocera booth (5E12) is the R&S ATS1800M 5G NR multi-directional mmWave test chamber from Rohde & Schwarz, designed for over-the-air (OTA) testing with an exceptionally small footprint.

Mobile communications that operate in the FR2 frequency range experience a high path loss, something that can be solved by using beamforming antenna arrays. In contrast to traditional antennas, FR2 antennas typically use phased arrays with a high number of individual antenna elements. Kyocera has developed a novel phased array antenna module (PAAM) featuring 384 dual polarization elements which is able to create up to 8 simultaneous beams in different directions at different frequencies. With this design, the PAAM can be used in site installations allowing multiple operators to run networks on different frequency bands.

However, all these antenna elements need to work perfectly together to form an RF beam with the desired characteristics. Rohde & Schwarz offers a patented approach for testing such a complex antenna array over- the-air (OTA) in a fully shielded environment, which helps engineers verify the correct beam pattern and supports the process of minimizing sidelobes.

The R&S ATS1800M is a unique solution that features four feed antennas and CATR reflectors, each with a 30 cm quiet zone (QZ). In the demonstration at MWC 2025, the Kyocera PAAM device under test (DUT) is placed on a rugged 3D positioner in the center, where all four QZs overlap, coming from multiple directions. This allows Kyocera’s engineers to address a variety of different tests, including the simultaneous reception of RF beams from four different directions, as will be shown at MWC 2025. Thanks to the vertical CATR design patented by Rohde & Schwarz, this setup takes up a fairly small footprint in the lab compared to other OTA-solutions.

The full test setup contains multiple test instruments from Rohde & Schwarz in addition to the mmWave test chamber, which work seamlessly together: four 5G NR-capable R&S SMW200A vector signal generators, a 5G NR-capable R&S FSW signal and spectrum analyzer, and an R&S NGP800 power supply. Each generator simulates a 5G NR FR2 signal which will be fed through one of the R&S ATS1800M feed antennas. The DUT receives the signal via one of the CATR reflectors. With the combination of all signal

sources, feed antennas and reflectors, Kyocera’s engineers can simulate complex reception scenarios of four frequency independent signals from four different locations. The received signal quality can be observed using the signal analyzer connected to the Kyocera PAAM.

Visitors to MWC 2025 can experience this milestone demonstration live at the Kyocera booth 5E12 in hall 5 of the Fira Gran Via in Barcelona from March 3 to 6, 2025.

For further information on antenna testing solutions from Rohde & Schwarz, visit: https://www.rohde-schwarz.com/_231852.html

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