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Separating the Signal from the Noise: Combining Advanced Imaging with AI for Chip Defect Review

ELE Times - Пн, 03/18/2024 - 14:22

As the semiconductor industry moves to next-generation 3D architectures, the need intensifies for process control solutions that can reduce the time to ramp a technology to production-level yields. Gate-All-Around (GAA) transistors, EUV lithography, and scaled memory devices all present challenging requirements for detection of defects buried within 3D structures. As critical dimensions shrink, these defects can approach single-digit nanometers in size, or only a few atoms thick.

Chipmakers use two tools to find and control manufacturing defects: optical inspection to detect potential defects on the wafer, followed by eBeam review to characterize these defects in more precise detail. Optical inspection and eBeam review are complementary – together they deliver an actionable pareto that engineers can use to optimize yield and ensure faster time-to-market.

A key challenge facing eBeam defect review at the most advanced nodes is the ability to differentiate the true defects from the false alarms presented from the optical inspection systems, while maintaining the high throughput necessary for volume production.

The eBeam review process has become much more challenging as transistors have moved from planar to FinFET and now GAA. The “false rate” – when optical inspection flags something that is not a true defect – more than doubles with the GAA structures. Defects are smaller and killer defects are more difficult to distinguish from noise with GAA and advanced memories. The defect maps created after optical inspection become denser, with a large amount of nuisance (>90%), in order to capture the required defects of interest (DOIs). With such a high nuisance rate, it becomes nearly impossible to deliver an actionable pareto with enough DOIs to achieve statistically significant process control. To compensate for the high number of candidates in inspection, process control engineers need defect review systems that can deliver far more samples than today’s typical benchmark of several hundreds of DOI candidates.

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Deep Learning for Defect Classification

Applied Materials is the leading provider of eBeam defect review systems. In 2022, we introduced our “cold field emission” (CFE) technology, a breakthrough in eBeam imaging that enables chipmakers to better detect and image nanometer-scale, buried defects. We are now extending this technology to address the increased sampling requirements of the high false alarm rates (“High FAR”) of advanced logic and memory.

When combined with the use of back-scattered electrons that enable high-resolution imaging of deep structures, CFE technology allows better throughput while maintaining high sensitivity and resolution compared with previous-generation thermal field emission (TFE) sources – enabling sub-nanometer resolution for detecting the smallest buried defects.

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Applied is now combining the use of CFE with deep learning AI technology for automatic extraction of true DOIs from the false “nuisance” defects. In many cases, the actual DOIs are only 5 percent or less of the review candidates. The deep learning network is continuously trained with data from the fab and sorts the defects into a defect distribution including voids, residues, scratches, particles and dozens of other defect types. Defect extraction is highly accurate, with nearly 100-percent accuracy.

3D Devices Need 3D Process Control

The use of Applied-developed AI to enable automatic DOI extraction and classification is a new application. In one use case, the eBeam system considered roughly 10,000 defect candidates of a GAA device. While traditional defect review might be able to sample this many candidates, the new CFE with AI defect review system delivers much greater sensitivity and higher throughput, handling 10,000 candidates in less than an hour. Moreover, the AI-enabled in-line detection, filtering and classification system can classify 4X as many DOIs into specific types. Combining CFE technology with a full envelope of AI solutions makes it possible to deal with the high false alarm rates for 3D structures presented by the wafer inspection systems. CFE offers the required sensitivity to image the challenging defects, at higher throughputs compared with traditional TFE systems. Subsequently, with the help of AI, the required DOIs are captured with high accuracy, filtering out nuisances. 

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As 3D devices are being deployed in production, Applied has developed defect review technology that can sample 10,000 – 20,000 locations per hour, handle false-alarm rates exceeding 90 percent, and classify the defect types presented to statistical process control solutions. This innovative defect review approach is being successfully demonstrated at leading logic and memory chipmakers. Based on the feedback so far, we see a strong pull from customers as they address the High FAR challenge.

SARVESH MUNDRASenior Product Marketing Manager
Applied MaterialsSARVESH MUNDRA
Senior Product Marketing Manager
Applied Materials

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Battery monitor maximizes performance of electric vehicle batteries

ELE Times - Пн, 03/18/2024 - 13:30

Courtesy: Arrow Electronics

Lithium-ion (Li-Ion) batteries are a common energy storage method for electric vehicles, offering very high energy density compared to all existing battery technologies. However, to maximize performance, it is essential to use a battery monitoring system (BMS) to safely manage the charging and discharging cycles, thereby extending the battery’s lifespan. This article will introduce the architecture and operation modes of BMS, as well as the product features and advantages of the BMS devices introduced by ADI.

BMS can enhance the operational efficiency of electric vehicle batteries

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Advanced BMS can assist electric vehicles in efficiently extracting a significant amount of charge from the battery pack during operation. It can accurately measure the battery’s state of charge (SOC) to extend battery runtime or reduce weight, and enhance battery safety involves avoiding electrical overloads in the form of deep discharge, overcharging, overcurrent, and thermal overstress.

The primary function of the BMS is to monitor the physical parameters during battery operation, ensuring that each individual cell within the battery pack stays within its safe operating area (SOA). It monitors the charging and discharging currents, individual cell voltages, and the overall battery pack temperature. Based on these values, it not only ensures the safe operation of the battery but also facilitates SOC and state of health (SOH) calculations.

Another crucial function provided by the BMS is cell balancing. In a battery pack, individual cells may be connected in parallel or series to achieve the desired capacity and operating voltage (up to 1 kV or higher). Battery manufacturers attempt to provide identical cells for the battery pack, but achieving perfect uniformity is not physically realistic. Even small differences can lead to variations in charging or discharging levels, and the weakest cell in the battery pack can significantly impact the overall performance. Precise cell balancing is a vital feature of the BMS, ensuring the safe operation of the battery system at its maximum capacity.

Wireless BMS removes communication wiring, reducing complexity

Electric vehicle batteries are composed of several cells connected in series. A typical battery pack, with 96 cells in series, generates over 400 V when charged at 4.2 V. The more cells in the battery pack, the higher the voltage achieved. While the charging and discharging currents are the same for all cells, it is necessary to monitor the voltage on each cell.

To accommodate the large number of batteries required for high-power automotive systems, multiple battery cells are often divided into several modules and distributed throughout the entire available space in the vehicle. A typical module consists of 10 to 24 cells and can be assembled in different configurations to fit various vehicle platforms. Modular design serves as the foundation for large battery packs, allowing the battery pack to be distributed over a larger area, thus optimizing space utilization more effectively.

In order to support a distributed modular topology in the high EMI environment of electric/hybrid vehicles, a robust communication system is essential. Isolated CAN bus is suitable for interconnecting modules in this environment. While the CAN bus provides a comprehensive network for interconnecting battery modules in automotive applications, it requires many additional components, leading to increased costs and circuit board space. Moreover, if modern Battery Management Systems (BMS) adopt wired connections, it comes with significant drawbacks. Wiring becomes a challenging issue as wires need to be routed to different modules, adding weight and complexity. Wires are also prone to pick up noise, requiring additional filtering.

Wireless BMS is a novel architecture that eliminates the need for communication wiring. In a wireless BMS, interconnection between each module is achieved through wireless connections. The wireless connection in large battery packs with multiple cells reduces wiring complexity, lowers weight, decreases costs, and enhances safety and reliability. However, wireless communication faces challenges in harsh EMI environments and signal propagation obstacles caused by RF-shielding metal components.

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Embedded wireless networks can improve reliability and precision

The SmartMesh embedded wireless network, introduced by ADI, has undergone on-site validation in Industrial Internet of Things (IoT) applications. It achieves redundancy through the use of path and frequency diversity, providing connections with reliability exceeding 99.999% in challenging environments such as industrial and automotive settings.

In addition to enhancing reliability by creating multiple redundant connection points, wireless mesh networks also extend the functionalities of BMS. The SmartMesh wireless network enables flexible placement of battery modules and improves the calculation of battery SOC and SOH. This is achieved by collecting more data from sensors installed in locations previously unsuitable for wiring. SmartMesh also provides time-correlated measurement results from each node, enabling more precise data collection.

ADI has integrated the LTC6811 battery stack monitor with ADI SmartMesh network technology, representing a significant breakthrough. This integration holds the potential to enhance the reliability of large multi-cell battery packs in electric and hybrid vehicles while reducing costs, weight, and wiring complexity.

The LTC6811 is a battery stack monitor designed for multi-cell battery applications. It can measure the voltage of up to 12 series-connected cells with a total measurement error of less than 1.2mV. The measurement of all 12 cells can be completed within 290μs, and a lower data acquisition rate can be selected for high noise reduction. The LTC6811 has a battery measurement range of 0V to 5V, suitable for most battery chemistry applications. Multiple devices can be daisy-chained to simultaneously monitor very long high-voltage battery stacks. The device includes passive balancing for each cell, and data exchange occurs on either side of an isolation barrier, compiled by the system controller. The controller is responsible for calculating SOC, controlling battery balancing, checking SOH, and ensuring the entire system stays within safe limits.

Moreover, multiple LTC6811 devices can be daisy-chained, allowing simultaneous monitoring of long high-voltage battery stacks. Each LTC6811 has an isoSPI interface for high-speed and RF-resistant remote communication. When using LTC6811-1, multiple devices are connected in a daisy-chain, and all devices share one host processor connection. When using LTC6811-2, multiple devices are connected in parallel to the host processor, and each device is individually addressed.

The LTC6811 can be powered directly from the battery pack or an isolated power source and features passive balancing for each battery cell, along with individual PWM duty cycle control for each cell. Other features include a built-in 5V regulator, 5 general-purpose I/O lines, and a sleep mode (where current consumption is reduced to 4μA).

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Cell balancing is employed to optimize battery capacity and performance

Cell balancing has a significant impact on the performance of batteries because even with precise manufacturing and selection, subtle differences can emerge between them. Any capacity mismatch between cells can lead to a reduction in the overall capacity of the battery pack. Clearly, the weakest cell in the stack will dominate the performance of the entire battery pack. Cell balancing is a technique that helps overcome this issue by equalizing the voltage and SOC between cells when the battery is fully charged.

Cell balancing technology can be divided into passive and active types. When using passive balancing, if one cell is overcharged, the excess charge is dissipated into a resistor. Typically, a shunt circuit is employed, consisting of a resistor and a power MOSFET used as a switch. When the cell is overcharged, the MOSFET is closed, dissipating the excess energy into the resistor. LTC6811 uses a built-in MOSFET to control the charging current for each monitored cell, thus balancing each cell being monitored. The integrated MOSFET allows for a compact design and can meet a 60 mA current requirement. For higher charging currents, an external MOSFET can be used. The device also provides a timer to adjust the balancing time.

On the other hand, active balancing involves redistributing excess energy among other cells in the module. This approach allows for energy recovery and lower heat generation, but the disadvantage is that it requires a more complex hardware design.

ADI has introduced an architecture using LT8584 to achieve active balancing of batteries. This architecture actively shunts charging current and returns energy to the battery pack, addressing the issues associated with passive shunt balancers. Energy is not dissipated as heat but is instead reused to recharge the remaining batteries in the stack. The architecture of this device also tackles a problem where one or more cells in the stack reach a low safe voltage threshold before the entire stack’s capacity is depleted, resulting in reduced runtime. Only active balancing can redistribute charge from stronger cells to weaker ones, allowing weaker cells to continue supplying power to the load and extracting a higher percentage of energy from the battery pack. The flyback topology enables charge to move back and forth between any two points in the battery pack. In most applications, the charge is returned to the battery module (12 cells or more), while in other applications, the charge is returned to the entire battery stack or auxiliary power rails.

The LT8584 is a monolithic flyback DC/DC converter designed specifically for active balancing of high-voltage battery packs. The high efficiency of the switch-mode regulator significantly increases the achievable balancing current while reducing heat dissipation. Additionally, active balancing allows for capacity recovery in stacks of mismatched batteries, a feature not attainable with passive balancing systems. In typical systems, over 99% of the total battery capacity can be achieved.

The LT8584 features an integrated 6A, 50V power switch, reducing the design complexity of the application circuit. The device operates entirely relying on the cells which it is discharging, eliminating the need for complex biasing schemes typically required when using an external power switches. The enable pin (DIN) is designed to seamlessly coordinate with the LTC680x series battery stack monitor ICs. Additionally, when used in conjunction with LTC680x series devices, the LT8584 provides system telemetry functions, including current and temperature monitoring. When disabled, the LT8584 typically consumes less than 20nA of total static current from the battery.

Conclusion

The key to low-emission vehicles lies in electrification, but it also requires smart management of energy sources (such as lithium-ion batteries). Improper management could render the battery pack unreliable, significantly reducing the safety of the vehicle. Both active and passive battery balancing contribute to safe and efficient battery management. Distributed battery modules are easy to support, and they can reliably transmit data to the BMS controller, whether through wired or wireless means, enabling dependable SOC and SOH calculations. ADI offers a comprehensive range of BMS components that can assist customers in accelerating BMS development, ensuring more efficient management of the operational efficiency and safety of electric vehicle batteries.

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After TSMC fab in Japan, advanced packaging facility is next

EDN Network - Пн, 03/18/2024 - 13:15

Japan’s efforts to reboot its chip industry are likely to get another boost: an advanced packaging facility set up by TSMC. That seems a logical expansion to TSMC’s $7 billion front-end chip manufacturing fab built in Kumamoto on Japan’s southern island Kyushu.

In other words, a back-end packaging facility will follow the front-end fab to complement the chip manufacturing ecosystem in Japan amid considerations to diversify semiconductor supply chains beyond Taiwan due to geopolitical tensions. Trade media has been abuzz about TSMC setting up an advanced packaging plant and a new Reuters report supports this premise.

Especially when TSMC has already set up an advanced packaging R&D center in Ibaraki prefecture, northeast of Tokyo, in 2021. The demand for advanced semiconductor packaging has surged due to high-end chips serving artificial intelligence (AI) and high-performance computing (HPC) applications. The rise of chiplets has also brought advanced packaging technologies into the limelight.

The above factors call TSMC, the world’s largest semiconductor factory, to plan additional packaging capacity; in fact, it’s already working to set up a new packaging facility in Chiayi, southern Taiwan. However, as TrendForce analyst Joanne Chiao notes, TSMC’s advanced packaging facility in Japan will likely be limited in scale. That’s mainly because most of TSMC’s packaging customers are based in the United States.

Figure 1 TSMC’s advanced packaging technology encompasses front-end 3D stacking techniques such as chip-on-wafer (CoW) and wafer-on-wafer (WoW) as well as back-end packaging technologies like integrated fan-out (InFO) and chip-on-wafer-on-substrate (CoWoS). Source: TSMC

with this new plant, TSMC’s CoWoS packaging technology will be transferred to Japan. It’s a 2.5D wafer-level packaging technology developed by TSMC that allows multiple dies to be integrated on a single substrate, providing higher performance and integration density than traditional packaging technologies. Currently, TSMC’s CoWoS packaging capacity is entirely based in Taiwan.

Figure 2 In CoWoS, multiple silicon dies are integrated on a passive silicon interposer, which acts as a communication layer for the active die on top. Source: TSMC

On TSMC’s part, the packaging facility in Japan will have closer access to the country’s leading semiconductor materials and equipment suppliers and a solid customer base. TSMC will also enjoy the generous subsidies from the Japanese government, which aims to revitalize the local semiconductor industry after losing ground to South Korea and Taiwan.

Finally, as the Reuters report notes, no decision on the scale and timeline of building the advanced packaging facility has been made yet. TSMC also declined to comment on this story. Still, with the construction of the TSMC fab in Kumamoto, industry observers firmly believe that Taiwan’s mega fab will inevitably set up an advanced packaging facility in Japan.

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Passive components in EV chargers should be selected carefully (EV Charging)

ELE Times - Пн, 03/18/2024 - 13:11

Courtesy: Avnet

When selecting components for an EV charger design, semiconductors are the usual focus of attention. Newer power switching technologies, Silicon Carbide in particular, promise very low losses and overall cost savings. Passive components cannot be forgotten. The use of wide bandgap (WBG) switches such as SiC MOSFETs presents additional opportunities for optimization. Passive components in the power train can be smaller in size and lower in weight, which comes with reduced cost. These developments bring passive technologies into play that would otherwise be unsuitable. The main passives to consider are DC-link capacitors, filter inductors, and transformers.

The DC-link capacitor

All on- and off-board EV chargers have similar power chains. They start with a power factor correction (PFC) stage followed by an isolated DC-DC conversion stage. The output power level does not change this basic architecture, as the fastest 400kW+ roadside chargers will still typically comprise lower power modules in a stacked configuration. Each module will deliver around 30kW, to reduce stress and provide redundancy. Each stage may be bi-directional in modern designs and overall would resemble any high-power AC-DC converter.

A Typical EV charger outline with critical passive components highlighted typical-ev-charger-circuit-diagram-highlighting-passivesPassives play an important role in EV charging topologies. Their selection will depend on the type of converter used, which will help indicate the efficiencies that can be achieved through the most optimal component selection.

One of the main differences between a generic converter and an EV battery charger design is the sizing of the DC-link capacitor. This capacitor is positioned on the DC rail, or link, between the PFC and DC-DC conversion stages. The potential here will be a voltage of around 650V up to 1000V. In a general-purpose AC-DC converter, this capacitor is usually sized for ‘hold-up’ time, maintaining the rail for typically 18/20ms after a mains failure. At 30kW, this would need around 8,000 µF, occupying about 80 cubic inches (1300cm3). At this capacity, aluminum electrolytics are the most economically viable option.

Hold-up capacitance is calculated by equating the hold-up energy required (hold-up time x output power/efficiency), with the energy expended as the capacitor voltage drops after AC failure from its normal level to a drop-out level, perhaps from 650V to 500V. That is, 30kW x 20ms/0.90 = (0.5 x C x 6502) – (0.5 x C x 5002) giving C = 7.7 mF.

In an EV charger application, hold-up is not an issue. The size of the DC-link capacitor is based on its ability to source high-frequency ripple current for the DC-DC stage and sink ripple current from the PFC stage. The total ripple voltage and temperature rise will also be factors.

The most suitable part is determined by the Equivalent Series Resistance (ESR) and Equivalent Series Inductance (ESL) of the capacitor, as well as its capacitance. Although high capacitance for hold-up is not necessary it is still common to select AL-electrolytics. Often engineers will use large capacitors in parallel, to achieve the desired ESR and ESL. Because of the capacitors’ size, it can be difficult to keep total connection resistance low with good ripple current sharing between the components.

The total impedance of an AL-electrolytic will typically reach its minimum at around 10kHz. That frequency is due to the capacitance, ESL, and variation in ESR. This low frequency is not a good match when using WBG devices, which switch better at several hundred kHz. The ESR of AL-electrolytics also rises strongly at low temperatures which could be problematic at start-up, especially in a battery charger application located outside. At the other extreme, 105°C is usually the maximum rating for an AL electrolytic.

Transfer curve of an AL electrolytic transfer-curve-of-AL-electrolytic-capacitorThe impedance of a large AL-electrolytic capacitor is typically at a minimum around 10kHz, which is not a good fit when using wide bandgap power transistors.

For an alternative to AL-electrolytics, look at film and multilayer ceramic capacitors (MLCCs). MLCCs have very low ESR and ESL, so the low impedance point occurs at a higher frequency. This higher frequency is more suitable when using WBG devices. The MLCC also has a longer lifetime than AL-electrolytics, perhaps 10x under the same conditions.

It is now common to see film capacitors used in the DC-link position. Film types are available rated to high voltages and operate at temperatures of at least 135°C. The common PCB-mount ‘box’ format used for MLCCs makes them easy to assemble with good packing density. They can also self-heal after over-voltage stress, unlike AL-electrolytics.

However, MLCCs are relatively high cost and low capacitance value per package. Achieving high capacitance requires using many in parallel. Some MLCCs are also relatively fragile and susceptible to substrate flexing. However, some MLCCs designed specifically for DC-link applications are now available, with fitted metal frames around paralleled parts. This eases assembly and provides some mechanical flexibility in the terminations.

Quantifying ripple current

Ripple current for a DC-link capacitor is difficult to quantify. The value depends on operating conditions, and summing the total value sunk from the PFC stage and sourced to the DC-DC stage is not simple. If the stages are not synchronized or if either stage is variable frequency, it is harder still to identify.

Simulation and bench measurements can be used, but as an approximation, for a DC link at 650V and 30kW load, the average current is about 50A allowing for inefficiencies. For a DC-DC duty cycle of 80%, this is about 25A rms sourced from the capacitor assuming a square wave. At a switching frequency of 100kHz and 10V rms ripple, only about 4µF would be needed if capacitive impedance dominates. If the capacitor ESR were 10 milliohms, this would add an extra 0.25V rms of ripple. We could guess that the ripple from the PFC stage is of the same order.

Despite these gross assumptions, it indicates that only a few tens of µF would be needed and film capacitors become practical if several are paralleled to achieve the ripple current capability. For example, four paralleled 20µF/700V metalized polypropylene capacitors can handle 62.5A rms total ripple with an overall ESR of less than one milliohm, giving less than 4 W total dissipation at 50A rms ripple current. The overall volume is 8.5 cubic inches (139 cm3).

An AL-electrolytic solution, for similar ripple current capability could be assembled from 10x 2700µF/400V parts, in a 5-parallel 2-series arrangement, with about 85A ripple current rating (10kHz) and an ESR of about 8 milliohms total. At 50A rms ripple current, this would give about 20W of dissipation overall.

Ripple voltage is much lower than the film capacitor solution, because of lower capacitive impedance, but the overall volume would be 125 cubic inches (2060 cm3) or nearly 15x larger. Further advantages of film capacitors include a particularly low ESL of a few tens of nH, adding only a volt or so to the ripple voltage waveform.

Comparing a typical MLCC solution, three in parallel could achieve 50A rms ripple rating and adequate capacitance for less than 10V rms ripple. ESR would be around 2 milliohms total and dissipation around 3W overall. Low ESR and ESL are maintained up to a frequency of at least 1MHz. This makes MLCC a good candidate for ultra-fast switching where capacitance value is less important. ESR and capacitance do vary however quite strongly with temperature and bias voltage. Typically, three modules would occupy just 0.8 cubic inches (13.25 cm3).

Indicative volume pricing shows four of the film parts would cost around one quarter the price of ten AL-electrolytics, while three MLCC modules would be about half the price of the ten AL-electrolytics. In practice, derating will be applied to capacitors of any type, requiring further parallel parts. That may apply more so for the electrolytics. In this case, the difference becomes even more striking. The table shows the difference in headline performance of film, MLCC, and AL-electrolytic capacitors.

Comparing capacitors for EV chargers comparing-capacitors-for-ev-chargingA comparison of capacitor technologies for typical industrial-grade parts, including the figures of merit important in an EV charging application. Magnetics in EV chargers

Magnetic components in EV chargers are like any found in AC-DC converters, but the fast charger environment and the trend toward WBG semiconductors influences the choice of fabrication technique. The main components to consider are the input EMI filter, PFC inductor, DC-DC transformer, output choke, and any additional resonant inductors, depending on the converter topology being used.

The EMI filter will comprise at least one common-mode choke in the AC input lines with windings phased so that flux from line currents cancel. This allows high inductance to be used without risk of saturation. High permeability ferrite cores are normally used but nano-crystalline material is sometimes seen for maximum inductance.

Windings are spaced to achieve voltage isolation and ideally in just a single layer, to keep self-capacitance low and self-resonance high. Differential-mode chokes are also usually necessary, and these see flux from the full line current. To avoid saturation, they are typically low inductance, wound on iron power core toroids. Some common-mode choke designs add separation to their windings to deliberately introduce leakage flux, which acts as an integrated differential mode choke. Both common-mode and differential-mode chokes are wound with magnet wire on bobbins or headers for PCB mounting.

magnetic-components-in-ev-charging-circuitsThe operating environment will influence the choice of common-mode (T1) and differential-mode (L1, L2, L3) chokes in the EMI filter stage of an EV charger, based on the materials used and manufacturing process. Magnetic component selection in EV chargers

The PFC choke operates at high frequency and its inductance value is chosen to match the operating mode of the stage; continuous, discontinuous, or ‘boundary’. These modes trade off semiconductor stress with potential EMI and choke size, and with the high peak currents present, a low effective core permeability is needed to avoid saturation.

A powder core would produce excessive core losses, so the preference is a gapped ferrite. This should offer minimum loss at the working flux density and frequency, and at the expected operating temperature. The component could be of bobbin construction, but a planar approach can be practical with PCB traces used as windings, giving low losses and a large surface area to help dissipate heat.

The DC-DC converter topology will invariably be a version of a forward converter, typically a full-bridge, and often a resonant type at the power levels involved. Planar transformer designs are popular as they are consistent and easy to integrate with the power switches operating at high frequency. However, safety isolation is required and the appropriate creepage and clearance distances can be difficult to achieve with this construction.

In most cases, high primary inductance is needed, achieved with an ungapped high-permeability core, and, like the PFC choke, the material is chosen for the lowest core losses. Resonant converters use an extra inductor that can be formed from the leakage inductance of the main transformer. This can be difficult to control and can limit overall performance, so normally the inductor is a separate component. The value can be very low so it could conceivably be air-cored but is more likely to utilize a core to constrain the magnetic field and reduce interactions.

An output choke, if necessary for the topology, is chosen in a similar way to the PFC choke. A desired ripple current is specified, which sets inductance for a given output voltage, duty cycle, and frequency. The DC output current flows through the choke, so a gapped ferrite is the normal core solution. The component again could be a planar construction in modern designs.

Conclusion

Passive components can become a limit to the performance achieved in EV charger designs. There are choices of components however which can leverage the characteristics of the latest semiconductor technologies to minimize losses and contribute to overall reduction in size, weight, and cost.

As a global leader in IP&E solutions, Avnet has a robust supplier line card in all regions as well as extensive design support and demand creation services. Our dedicated IP&E experts can help with everything from supply chain needs to service organization requirements.

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Servotech Power Systems to Build 20 EV Charging Stations for Nashik Municipal Corporation

ELE Times - Пн, 03/18/2024 - 12:47

Servotech Power Systems Ltd., a prominent player in the EV charging and solar industry, has secured a substantial contract from the Nashik Municipal Corporation (NMC). This contract involves Servotech supplying, commissioning, and constructing 20 electric vehicle (EV) charging stations throughout the Nashik Municipal Corporation area.

The objective of this contract is to meet the increasing need for convenient and accessible charging facilities for electric vehicles, thus facilitating the state’s shift towards sustainable transportation solutions. As the demand for EV mobility grows, there is a corresponding need for enhanced EV charging infrastructure and these charging stations will enable EV owners to recharge their vehicles conveniently while on the move.

Servotech will oversee the installation, supply, commissioning, construction and maintenance of EV charging stations, catering to various vehicles and substantially improving Nashik’s EV charging network. This positions Servotech as a frontrunner in India’s growing EV infrastructure market and aligns with the government’s vision to create a robust EV ecosystem nationwide. Additionally, this initiative reflects Servotech’s commitment to sustainability by facilitating Nashik’s transition to cleaner transportation, aligning with its environmental responsibility goals, and reducing carbon emissions in one of the key cities of India.

Sarika Bhatia, Director of Servotech Power Systems Ltd. said, “This contract represents a major milestone for Servotech Power Systems, we are deeply committed to advancing India’s electric vehicle revolution and fostering sustainable transportation solutions. We are already a leader in the EV charger market and through this initiative, we are set to become a leader in the EV charging infrastructure market as well. This collaboration with the Nashik Municipal Corporation underscores our capabilities to provide cutting-edge and reliable EV charging solutions for cities across the nation. By expanding the accessibility of EV charging infrastructure, we aim to support the widespread adoption of electric vehicles, reducing carbon emissions and promoting a cleaner, greener future for generations to come. We are excited to contribute to Nashik’s transition to cleaner transportation and look forward to delivering high-quality charging solutions that meet the city’s evolving needs. As a premier EV charger manufacturer, we aim to transform India into a nation where EVs are not just a vision but a reality. With a shared vision and unwavering dedication, we believe in making this dream come true, driving a seamless shift toward a greener, more sustainable transportation landscape.

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Powering the Next Wave of Smart Industrial Sensors with NuMicro M091 Series Microcontrollers

ELE Times - Пн, 03/18/2024 - 12:10

In the era of Industry 5.0, where intelligence, sensing capabilities, and automation are paramount, the demand for precise, compact sensors continues to soar across various fields of industrial automation and IoT applications—introducing the NuMicro M091 series, a line of 32-bit high-integration analog microcontrollers designed to elevate the accuracy of analog functions and digital controls within a small package size.

Key Features of High-Integration Analog Microcontrollers

Based on the Arm Cortex-M0 core, the NuMicro M091 series operates at frequencies up to 72 MHz, with Flash memory ranging from 32 KB to 64 KB, 8 KB of SRAM, and a working voltage of 2.7V to 3.6V. Breaking new ground in performance, this series offers rich analog peripherals, including 4 sets of 12-bit DACs and up to 16 channels of 12-bit 2 MSPS ADCs. Additionally, it supports up to four sets of precision Rail-to-Rail operational amplifiers (OP Amps), delivering exceptional specifications to enhance output signal accuracy. These specifications include Input Offset Voltage as low as 50 µV, an extremely low-temperature drift of 0.05 µV/℃, a high slew rate of up to 6V/µs, and a broad gain bandwidth of 8 MHz, ensuring the integrity of amplified signals. It also includes a built-in temperature sensor with a ± 2 °C deviation.

Rich Peripheral Modules and Applications

With the addition of up to 6 sets of 32-bit timers, 1 UART, 1 SPI, 2 I²C, and 6-channel 16-bit BPWM peripheral modules, the NuMicro M091 series ensures seamless adaptation to various application scenarios, providing a more comprehensive solution. To meet the growing demand for small-sized sensors, this series offers QFN33 (4 x 4 mm) and QFN48 (5 x 5 mm) compact package sizes, facilitating easy integration of sensing technology into diverse application scenarios.

Ease of Development

Equipped with the NuMaker-M091YD development board and Nu-Link debugger, the M091 series offers powerful tools for product evaluation and development. Moreover, it supports third-party IDEs such as Keil MDK, IAR EWARM, and the self-developed NuEclipse IDE by Nuvoton, providing developers with more choices and convenience.

Experience the Future of Industrial Sensing with NuMicro M091 Series Microcontrollers, Redefining Precision, and Integration in the World of Smart Sensors.

The post Powering the Next Wave of Smart Industrial Sensors with NuMicro M091 Series Microcontrollers appeared first on ELE Times.

GaAs Labs sells Mission Microwave

Semiconductor today - Пн, 03/18/2024 - 10:58
California-based technology investment company GaAs Labs LLC has sold its portfolio company Mission Microwave Technologies LLC of Cypress, CA, USA — a provider of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) and block upconverters (BUCs) to the satellite communications market — to an investment affiliate of US-based J.F. Lehman Company (JFLCO)...

Model 001 - free-form 'Talking Clock'

Reddit:Electronics - Пн, 03/18/2024 - 01:13
Model 001 - free-form 'Talking Clock'

'Model 001' is a free-formed 'Talking Clock' with a strong 'Star Wars' audio theme. It also acts as a complete MP3 player.

The clock was designed as a gift to my son and reacts to a set of dates and times specific to him. An hourly chime function announces the current time using my voice and personalized messages to him.

The clock is interactive, providing a text-based interface and menus, accessible over a serial Bluetooth interface. To keep the interface secure, the clock uses a one-time password login scheme, using its OLED display to present the required login code needed from the user.

The menus hide many personal 'Easter Eggs', waiting to be discovered. It reacts to good and bad input with contextual 'Star Wars' sound effects.

The clock's main structure is built using 2mm copper welding rods, 0.8mm brass rods and 20 AWG bare copper wire were used for wiring components. The clock's electronics are commonly found electronic components, such as a Raspberry Pi Pico RP2040, a DS3231 RTC, a HC-06 serial Bluetooth module, a DFPlayer Mini MP3 player chip, a small HW-404 amplifier and a 128x64 SSD1306 blue OLED display. Two 4 Ohm / 3 Watt speakers are connected to the HW-404 amplifier and provide a crisp audio ouput.

The square wooden base of the clock provides illumination, thanks to an RGB LED as well as power for the clock itself.

The firmware for this clock was written in Go / TinyGo, along with a pure Go driver for the DFPlayer Mini MP3 chip.

https://preview.redd.it/i3zm9yub8zoc1.jpg?width=4160&format=pjpg&auto=webp&s=bb56cdbe721b4de7837099e005eedcc9c17515bc

https://preview.redd.it/ymsxxyub8zoc1.jpg?width=4160&format=pjpg&auto=webp&s=b6cc20eacf66bd58e1d6ce6cae6be073b6b6dd83

https://preview.redd.it/hvl301vb8zoc1.jpg?width=4160&format=pjpg&auto=webp&s=d038e186a6c0d8f864e5128a2657d27ef7948863

https://preview.redd.it/zid2wzub8zoc1.jpg?width=4160&format=pjpg&auto=webp&s=b82da579c58e040bd75f4e2f76ceb320e7189993

submitted by /u/Professor_Shotgun
[link] [comments]

My highschool EE project

Reddit:Electronics - Пн, 03/18/2024 - 00:12
My highschool EE project

This is my highschool electronics project, made this at around 15 years old it uses Binary adders, counters and cimparators and has alarm and time adjustment

submitted by /u/ZephKeks
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Understanding Output Signal Swing in Op Amps

AAC - Ндл, 03/17/2024 - 19:00
Learn about the characteristics and limitations of an operational amplifier’s output voltage range.

Ben Eater 8-bit CPU using Logisim simulator

Reddit:Electronics - Ндл, 03/17/2024 - 11:43

I just finished the Ben Eater 8-bit CPU implementation using Logisim. I had a ton of fun doing this and being a mechanical engineer, I learned a lot. I'm planning to do extend this to have dedicated data, address and instruction bus in the next design. God, I love how CPU works.

Project

submitted by /u/wannabearoboticist
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I’m building a VFD clock from scratch using only jellybean ICs

Reddit:Electronics - Ндл, 03/17/2024 - 11:31
I’m building a VFD clock from scratch using only jellybean ICs

On the photos you can see the display module I made hooked up to my Arduino. I’m working on the boost and MCU board now, this is also my fist PCB design and I’m so proud of it!

More infos, pictures and gerber here

submitted by /u/Shyne-on
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Weekly discussion, complaint, and rant thread

Reddit:Electronics - Сбт, 03/16/2024 - 17:00

Open to anything, including discussions, complaints, and rants.

Sub rules do not apply, so don't bother reporting incivility, off-topic, or spam.

Reddit-wide rules do apply.

To see the newest posts, sort the comments by "new" (instead of "best" or "top").

submitted by /u/AutoModerator
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ST’s Packs MPU-Level Performance in New 600 MHz Bootflash MCUs

AAC - Сбт, 03/16/2024 - 01:00
Two new 32-bit Arm Cortex-M7 microcontrollers combine bigger system capabilities with the convenience of a microcontroller.

UK becomes participating state in EU’s Chips Joint Undertaking, accessing €1.3bn Horizon Europe collaborative research funding

Semiconductor today - Птн, 03/15/2024 - 19:14
The UK has joined the European Union’s ‘Chips Joint Undertaking’ as a participating state, giving British semiconductor researchers and businesses enhanced access to a €1.3bn fund set aside from Horizon Europe (the European Union’s scientific research initiative) to support research in semiconductor technologies over 2021-2027...

Remembering Caroline Haslett, a Staunch Advocate for Women in Engineering

AAC - Птн, 03/15/2024 - 19:00
In this Women's History Month feature, we explore the life of Caroline Haslett, a leader in many societies for female engineers.

Sivers signs product development agreement for next-gen AI laser arrays

Semiconductor today - Птн, 03/15/2024 - 15:02
Sivers Semiconductors AB of Kista, Sweden (which supplies ICs and modules for communications and sensor solutions) says that its subsidiary Sivers Photonics of Glasgow, Scotland, UK has signed a product development agreement with an undisclosed company, helping to develop photonic laser arrays enabling next-generation artificial intelligence (AI)...

Infineon partner Thistle Technologies integrates its Verified Boot technology with Infineon’s OPTIGA Trust M for enhanced device security

ELE Times - Птн, 03/15/2024 - 14:01

Infineon Technologies AG has announced the integration of its OPTIGA Trust M security controller, with tamper-resistant hardware certified to Common Criteria EAL6+, with the Verified Boot technology by Thistle Technologies, a pioneer of advanced security solutions for connected devices. This integration enables designers to easily defend their devices against firmware tampering and protect the software supply chain integrity. The result is improved end-user security, which is particularly important in industries with high security requirements such as healthcare, automotive and device manufacturing.

Thistle Technologies Verified Boot provides a secured boot process for IoT devices. Enhanced integrity checks cryptographically examine that the device firmware has not been tampered with. The solution supports the needs of a wide range of IoT devices for smart homes, smart cities and smart buildings, among others, enabling easy implementation with minimal development time. By leveraging the robust security features of Infineon’s OPTIGA Trust M, including its hardware-based root-of-trust, the technology offers a high level of protection against unauthorized firmware modifications and sophisticated cyberattacks.

“Since the start of our partnership in January 2023, Thistle has developed a software integration for our OPTIGA Trust M within Linux to extend our hardware capability into the application software domain for Linux-based system architectures,” said Vijayaraghavan Narayanan, Senior Director and Head of Edge Identity & Authentication at Infineon. “The new solution enables our shared customers to quickly enhance the security of their development.”

“Integrating our Verified Boot technology with Infineon’s OPTIGA Trust M is a significant step forward in making it easy to incorporate sophisticated security capabilities into devices quickly,” said Window Snyder, CEO of Thistle Technologies.

The post Infineon partner Thistle Technologies integrates its Verified Boot technology with Infineon’s OPTIGA Trust M for enhanced device security appeared first on ELE Times.

Infineon sues Innoscience for Patent Infringement

ELE Times - Птн, 03/15/2024 - 13:26

Infineon Technologies AG has filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates (hereinafter: Innoscience). Infineon is seeking a permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon. The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Central District of California.

Infineon alleges that Innoscience infringes the Infineon patent mentioned above by making, using, selling, offering to sell and/or importing into the United States various products, including GaN transistors for numerous applications, within automotive, data centres, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications.

“The production of gallium nitride power transistors requires completely new semiconductor designs and processes”, said Adam White, President of Infineon’s Power & Sensor Systems Division. “With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.” Infineon has been investing in R&D, product development and manufacturing expertise related to GaN technology for decades. Infineon continues to defend its intellectual property and protect its investments.

On 24 October 2023, Infineon announced the closing of the acquisition of GaN Systems Inc., becoming a leading GaN powerhouse and further expanding its leading position in power semiconductors. Infineon leads the industry with its GaN patent portfolio, comprising around 350 patent families. Market analysts expect the GaN revenue for power applications to grow by 49% CAGR to approximately US$2 billion by 2028 (source: Yole, Power SiC and GaN Compound Semiconductor Market Monitor Q4 2023). Gallium nitride is a wide bandgap semiconductor with superior switching performance that allows smaller size, higher efficiency and lower-cost power systems.

The post Infineon sues Innoscience for Patent Infringement appeared first on ELE Times.

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