Новини світу мікро- та наноелектроніки

Nuvoton Technology, a leading global semiconductor technology provider, proudly announces its latest groundbreaking product – the eBMC chip. This innovative product, specially designed for edge computing platforms, promises to deliver enhanced efficiency, security, and management capabilities to the edge computing environment.

The eBMC (Edge Computing Base Management Controller) chip is a novel creation based on Nuvoton’s own BMC (Base Management Controller) and TPM (Trusted Platform Module) technologies. It seamlessly integrates Root of Trust (RoT), network security, and platform management. In addition to bringing full security and privacy protection for AI of edge computing, it also brings a perfect balance of design convenience and usability for edge computing platform manufacturers.

The eBMC chip boasts several crucial features, including:

1. Root of Trust (RoT): The eBMC chip establishes a Root of Trust, ensuring the highest level of security for all data during processing and transmission. This is crucial for safeguarding sensitive data and mitigating data risks.
2. Security and Privacy: The eBMC chip emphasizes security by incorporating multiple layers of security measures to guarantee data integrity and confidentiality. It integrates TPM technology, supporting data encryption, authentication, and risk management, shielding users from potential threats.
3. Remote OOB (Out-of-Band) Management: AI models need to be deployed and regularly updated on edge devices, and these devices are often deployed in hard-to-reach locations. Therefore, eBMC chip provides remote management and troubleshooting, ensuring these devices maintain optimal operation in various environments.

In addition, the eBMC chip provides various interfaces and traditional I/O functions, including USB, eSPI, CAN Bus, UART, and more, making it compatible with various platforms, including x86 and ARM, while offering greater flexibility.

Nuvoton also proudly announces the selection of the eBMC chip as the Advantech EdgeBMC Out-of-Band management solution for IoT devices by Advantech in 2023. This collaboration ensures a higher level of security and management for IoT devices. “We are proud that the eBMC chip has been adopted by Advantech. This is a testament to our commitment to edge computing, data security, and smart technology. We believe this innovative product will bring greater value to Advantech and drive IoT future technological developments.” Nuvoton remarks.

Nuvoton has always been committed to driving progress worldwide through innovative technology. Nuvoton eBMC chip will continue to bring more innovation and development to the field of edge computing.

The post Nuvoton Technology Ushers in a New Era of Edge Computing with the Introduction of the Innovative eBMC Chip appeared first on ELE Times.

• Engineers can develop AC/DC solutions that are half the size and achieve >95% system efficiency, simplifying thermal design.
• New GaN devices are compatible with the most common topologies in AC/DC power conversion.

Texas Instruments today announced the expansion of its low-power gallium nitride (GaN) portfolio, designed to help improve power density, maximize system efficiency, and shrink the size of AC/DC consumer power electronics and industrial systems. TI’s overall portfolio of GaN field-effect transistors (FETs) with integrated gate drivers addresses common thermal design challenges, keeping adapters cooler while pushing more power in a smaller footprint.

“Today’s consumers want smaller, lighter and more portable power adapters that also provide fast, energy-efficient charging,” said Kannan Soundarapandian, general manager of High Voltage Power at TI. “With the expansion of our portfolio, designers can bring the power-density benefits of low-power GaN technology to more applications that consumers use every day, such as mobile phone and laptop adapters, TV power-supply units, and USB wall outlets. Additionally, TI’s portfolio also addresses the growing demand for high efficiency and compact designs in industrial systems such as power tools and server auxiliary power supplies.”

The new portfolio of GaN FETs with integrated gate drivers, which includes the LMG3622, LMG3624 and LMG3626, offers the industry’s most accurate integrated current sensing. This functionality helps designers achieve maximum efficiency by eliminating the need for an external shunt resistor and reducing associated power losses by as much as 94% when compared to traditional current-sensing circuits used with discrete GaN and silicon FETs.

Maximize energy efficiency and simplify thermal design

TI’s GaN FETs with integrated gate drivers enable faster switching speeds, which helps keep adapters from overheating. Designers can reach up to 94% system efficiency for <75-W AC/DC applications or above 95% system efficiency for >75-W AC/DC applications. The new devices help designers reduce the solution size of a typical 67-W power adapter by as much as 50% compared to silicon-based solutions.

The portfolio is also optimized for the most common topologies in AC/DC power conversion, such as quasi-resonant flyback, asymmetrical half bridge flyback, inductor-inductor-converter, totem-pole power factor correction and active clamp flyback.

To learn more about the benefits of TI GaN for the most common AC/DC topologies, read the technical article, “The benefits of low-power GaN in common AC/DC power topologies.”

TI has a long history of globally owned, regionally diverse internal manufacturing operations, including wafer fabs, assembly and test factories, and bump and probe facilities across 15 worldwide sites. TI has been investing in manufacturing GaN technology for more than 10 years.

With plans to manufacture more than 90% of its products internally by 2030, TI has the ability to provide customers with dependable capacity for decades to come.

Production quantities of the LMG3622 and LMG3626 and pre-production quantities of the LMG3624 are available for purchase now on TI.com/GaN.

• Pricing starts at US$3.18 in 1,000-unit quantities.
• Available in an 8-mm-by-5.3-mm, 38-pin quad flat no-lead package.
• Evaluation modules, including the LMG3624EVM-081, start at US$250.
• Multiple payment and shipping options are available.
• Pin-to-pin devices without integrated current sensing, LMG3612 and LMG3616, are also available.

Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures, tests and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. Our passion to create a better world by making electronics more affordable through semiconductors is alive today, as each generation of innovation builds upon the last to make our technology smaller, more efficient, more reliable and more affordable – making it possible for semiconductors to go into electronics everywhere. We think of this as Engineering Progress. It’s what we do and have been doing for decades. Learn more at TI.com.

All registered trademarks and other trademarks belong to their respective owners.

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With a developed ecosystem, an ultra-low-power consumption profile, and an established presence in mobile phones, it is understandable why Bluetooth Low Energy (Bluetooth LE) technology has emerged as the preferred wireless protocol for new connectivity use cases in automotive applications.

This article examines the drivers behind the rising use of wireless connectivity in automobiles and reviews some current and potential future use cases for Bluetooth LE.

BLE driving factors in vehicles

The automotive industry is undergoing an unprecedented revolution, with a near-simultaneous convergence in the trends toward electrification, autonomous driving, and vehicle-to-everything (V2X) connectivity. Cars are evolving from providing an essential transport service to providing occupants with a rewarding travel experience. Vehicle occupants will increasingly look to use their smartphones to gain access to their vehicles and customize this experience.

In addition, as the number of sensors, safety and infotainment systems in cars grows, so does the requirement to interconnect them to in-vehicle computers. Here, using cables, which add significant weight and volume to a vehicle, poses challenges for manufacturability, cost, and complexity.

Figure 1 Wireless connectivity in vehicles enhances user experience. Source: onsemi

Bluetooth LE is a low-power and cost-effective alternative to traditional interconnectivity solutions based on controller area networks (CAN) and local interconnect networks (LIN). So, several automotive OEMs are trying to leverage a Bluetooth LE infrastructure to replace these technologies in some use cases.

Bluetooth LE has several advantages over other wireless technologies, which makes it the preferred choice for automotive applications, including:

• Proven communication with smartphones allays concerns about interoperability
• Standardized specification and certification
• Robust performance in electrically noisy and harsh environments
• Availability of AEC-Q100 automotive qualified parts
• Low-power consumption which is a critical requirement in electric vehicles
• Availability of low-cost system-on-chip (SoC) components and antennas

Bluetooth LE automotive use cases

Bluetooth technology in automobiles was first used with vehicle access systems, enabling features like the phone-as-a-key feature for passive-entry and passive-start. Future developments around Bluetooth LE in this application will see customized user experiences based on individual digital keys and profiles. For example, a vehicle will be able to automatically identify a profile stored in a driver’s or passenger’s mobile phone and then seamlessly adjust the position of mirrors, seats, and the steering wheel to match individual preferences.

Additionally, it will be possible to create shared keys for other vehicle users, eventually making phone-as-a-key a practical solution for the emerging trend of shared autonomous vehicles. However, this will also require profiles to be protected by the highest security levels to prevent them from being copied by unauthorized third parties who could steal or alter how the vehicle operates.

Here, it’s worth mentioning that low power is crucial in infotainment systems like telematics boxes and head-unit displays. Often, these systems include high-power-consumption connectivity devices like cellular telecommunications modems, Wi-Fi, and other connectivity protocols. These systems have stringent power budgets that must be adhered to so as not to place a drain on a vehicle’s battery when a car is not in use.

Meeting these requirements is driving system developers to look for low-power wireless MCUs that can shut off the higher power consumption components in the vehicle but still wake them up when needed. Bluetooth LE is an excellent option for this purpose, allowing a telematics box or head-unit display to determine if it needs to wake up to handle over-the-air software updates or perform other diagnostic functions, for example.

Apart from vehicle body applications, another emerging trend is to use radios featuring Bluetooth technology in battery-management systems to send periodic temperature and voltage information about battery packs to the main computer. Bluetooth LE can also help OEMs to reduce costs with features like wireless tire pressure monitoring systems (TPMS) that allow drivers to check tire pressure using their phones or even receive notifications when a tire is flat.

Bluetooth LE can also simplify designs for controlling multi-position power seats, mirrors, locks, and sunroofs. Apart from ultra-low-power consumption, a small form factor and the ability to secure data communication within and outside the vehicle are critical requirements when selecting a Bluetooth LE-enabled MCU for use in a car.

Low-power wireless MCUs

Besides connectivity, wireless MCUs also feature embedded security and ultra-low power for automotive applications. The wireless MCU shown below has four low-power modes to reduce power consumption while maintaining system responsiveness. These include sleep, standby, smart sense, and idle. Smart sense mode takes advantage of the low-power capability of sleep mode while allowing some digital and analog peripherals to remain active with minimal processor intervention.

Figure 2 The NCV-RSL15 wireless MCU is designed with a smart sense power mode. Source: onsemi

These features allow wireless MCUs to support applications like vehicle access, tire pressure, and tire monitoring systems for up to 10 years off the power from a single coin cell. Next, OEMs continue to find ways to exploit Bluetooth LE-enabled MCUs in developing lighter, more scalable battery management systems that are easier to manufacture.

Moreover, the wireless MCU shown above is built around an Arm Cortex−M33 processor core with TrustZone Armv8−M security extensions, which form the basis of its security platform. The MCU also incorporates embedded security with an Arm CryptoCell featuring hardware-based root-of-trust secure boot, many user-accessible hardware-accelerated cryptographic algorithms, and firmware-over-the-air (FOTA) capabilities to support future firmware updates and deployment of security patches.

Such security features make Bluetooth LE-enabled MCUs highly suitable for remote access devices.

Ben Widsten is product manager for Bluetooth Low Energy solutions at onsemi.

Related Content

• Bluetooth low energy (BLE) explained
• Ultra-Small Bluetooth Low Energy SoC
• Inside Bluetooth low-energy technology
• The basics of Bluetooth Low Energy (BLE)
• Bluetooth 4.0: An introduction to Bluetooth Low Energy

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Energy Collaborative to highlight initial sponsors, partners and mission at COP28 2023 United Nations Climate Change Conference

Aiming to reduce global semiconductor ecosystem carbon emissions, SEMI and the Semiconductor Climate Consortium (SCC) have created the Energy Collaborative (EC) to understand and clear roadblocks to the installation of low-carbon energy sources in the Asia-Pacific region. The EC, a collective of industry leaders, will provide a consolidated view of priorities for low-carbon energy in the region.

“Sharing resources to start this foundational semiconductor industry sustainability work now is important to enable wider access to low-carbon energy in the next five to ten years,” stated Young Bae, SCC Governing Council member and sponsor for the SCC Scope 2 Working Group, and Global Business Director, Advanced Cleans Technologies at DuPont. “One of the key action areas the SCC has identified is the lack of low-carbon energy plans and actions in the Asia-Pacific region. The EC will help the SCC by accelerating investments to broaden access.”

The EC sponsoring companies will anchor the collective’s work to engage in roundtables and fact-finding sessions. Initial sponsors include:

• Applied Materials
• AMD
• ASE
• ASML
• JSR
• Lam Research
• Macquarie Group
• Samsung Electronics
• TotalEnergies
• TSMC

McKinsey & Company is a Knowledge Partner to the initiative, providing fact-based analysis and support.

“The semiconductor value chain and its downstream partners and customers have a pivotal role to play in the acceleration of low-carbon energy installations, due to their scale in high-priority markets and the extent to which they will drive growth in future energy demands,” stated Ajit Manocha, President and CEO of SEMI. “To reach the emissions reductions goals of the sector, a step function change in ambition and action is required. The EC is focused on that goal – increasing the pace and scaling of access to low-carbon energy.”

A recent SCC report found that the semiconductor value chain is a significant consumer of energy in almost all key Asian markets. Additionally, a recent analysis by McKinsey & Company shows that even with major semiconductor companies’ latest commitments, which are more stringent than past measures, the industry is not on track to limit emissions to the extent required under the 2015 Paris Agreement. The analysis finds that both individual and collective actions by semiconductor players can help the entire industry increase its sustainability effort and meet the 1.5°C challenge.

SEMI representatives will host a special session on December 2 in the Green Zone at COP28 in Dubai, United Arab Emirates. For more information, contact Heidi Hoffman of SEMI at hhoffman@semi.org.

SEMI welcomes additional sponsors and partners of the Energy Collaborative. To join the collaborative or learn more, contact scc@semi.org.

About the Semiconductor Climate Consortium
Focused on overcoming emissions challenges facing the semiconductor value chain, the Semiconductor Climate Consortium (SCC) was formed based on the principles of collaboration, ambition and transparency. SCC working groups are working to establish more accurate emissions reporting, measure the value chain’s progress and accelerate the development of sustainability solutions. An outgrowth of the SEMI Sustainability Initiative, the SCC has more than 90 members.

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One of the largest vendors of embedded processors has independently developed a CPU core for the 32-bit general-purpose RISC-V market; it can be used as the main CPU or on-chip subsystem and can even be embedded in an application-specific standard product (ASSP).

Renesas Electronics, which has designed and tested a 32-bit CPU core based on the open-standard RISC-V instruction set architecture (ISA), is currently sampling devices based on this new core to select customers. It plans to launch its first RISC-V-based MCU and associated development tools in the first quarter of 2024.

It’s important to note that while several MCU suppliers have announced the development of RISC-V products, Renesas is the first company to unveil a 32-bit RISC-V MCU architecture development. Also worth noting is that the Japanese chipmaker’s 32-bit MCU portfolio includes its proprietary RX Family as well as RA Family based on the Arm Cortex-M architecture.

Another important fact in Renesas’s RISC-V foray is that it has already introduced 32-bit ASSP devices for voice control and motor control built on CPU cores developed by Andes Technology. Renesas has also unveiled 64-bit general-purpose microprocessors (MPUs) built on Andes CPU cores.

The high-level block diagram highlights the 32-bit RISC-V MCU architecture development. Source: Renesas

Renesas claims its RISC-V CPU achieves a 3.27 CoreMark/MHz performance, outperforming similar architectures in performance and code size reduction. It’s a versatile CPU that is suitable for different application contexts. For instance, it can serve as a main application controller, a complementary and secondary core in system-on-chips (SoCs), and in on-chip subsystems and deeply embedded ASSPs.

Giancarlo Parodi, principal product marketing engineer at Renesas, also claims in his blog that CPU’s implementation is very efficient regarding silicon area. Besides smaller cost impact, it helps reduce operating current and leakage current during standby time. Finally, despite targeting small embedded systems, this RISC-V core provides a high level of computational throughput.

Next, in line with RISC-V ISA foreseeing several ‘extensions’ that target specific functionality more efficiently, Renesas has included extensions to improve performance and reduce code size. Additionally, the CPU core has added a stack monitor register to enhance the robustness of the application software. It will help designers detect and prevent stack memory overflows, a common issue spotted through test coverage alone.

Parodi’s blog provides more details about the CPU features and capabilities and how they assist developers in benchmarking an application and verifying its behavior. More details about its performance score will be available on the EEMBC website once the first product is unveiled in early 2024.

The RISC-V processors, known for their flexibility, are gradually making inroads in the embedded systems landscape. In this design journey, the availability of a homegrown CPU from a major MCU supplier lends RISC-V fray significant credibility in offering embedded processing solutions for a broad range of applications.

Related Content

• A Big Week for RISC-V
• Examining the Top Five Fallacies About RISC-V
• Startups Help RISC-V Reshape Computer Architecture
• Accelerating RISC-V development with network-on-chip IP
• RISC-V venture in Germany to accelerate design ecosystem

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The NRP170TWG(N) thermal waveguide power sensor from Rohde & Schwarz enables power level measurements from 110 GHz to 170 GHz. It provides full traceability to national metrology institute (NMI) standards in this frequency range, an important prerequisite for commercializing the D-band. According to R&S, it is the only NMI-traceable RF power sensor for the D-band.

The plug-and-play device comes in two variants: the NRP170TWG, controlled via a USB connection, and the NRP170TWGN, offering both USB and LAN connections. Both models are calibrated for long-term stability and compensate for environmental temperature changes within the operating range of 0°C to +50°C. Sensors have a dynamic range of -35 dBm to +20 dBm and handle up to 500 measurements/s. 

The thermal power sensors can be used in general R&D for 6G mobile communications, novel sub-THz communications, sensing, and future automotive radar applications. No calibration is required prior to performing measurements, since the sensors are fully characterized over frequency, level, and temperature. All calibration data is stored in the sensor.

The NRP170TWG(N) thermal power sensors are available now from Rohde & Schwarz.

NRP170TWG(N) product page

Rohde & Schwarz 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Microchip’s PIC18-Q24 MCUs employ a programming and debugging interface disable (PDID) function that enhances chip-level security. When enabled, this enhanced code protection feature disables the programming/debugging interface and blocks unauthorized attempts to read, modify, or erase firmware.

The PIC18-Q24 microcontroller family also provides a multi-voltage I/O (MVIO) interface. MVIO allows the MCU to interface with digital inputs or outputs at different operating voltages. This integrated level shifting not only eliminates the need for external level shifters, but also reduces both design area and BOM costs. MVIO pins support a voltage range of 1.62 V through 5.5 V.

With PDID and MVIO, PIC18-Q24 8-bit MCUs are particularly useful as system management processors, performing monitoring and telemetry for a larger processor. These routine tasks are typically most vulnerable to potential hackers as they attempt to gain access to embedded systems.

Other features of the PIC18-Q24 include a 10-bit ADC with computation capable of 300 ksamples/s and an 8-bit signal routing port to interconnect digital peripherals without using external pins. The PIC18-Q24 devices are available in a variety of packages with pins counts ranging from 28 to 48 pins.

To learn more, visit Microchip’s 8-bit PIC MCU webpage. For purchase information, contact a Microchip sales representative, authorized distributor, or visit the Microchip Direct website.

PIC18-Q24 product brief

Microchip Technology 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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With its precision analog front end, the Renesas RX23E-B 32-bit MCU is well-suited for high-end industrial sensor systems and measuring instruments. The part’s 24-bit delta-sigma ADC achieves a conversion speed of up to 125 ksamples/s, which is eight times faster than the company’s existing RX23E-A MCU. It performs accurate A/D conversion, while reducing RMS noise to one-third (0.18 µVRMS @ 1 ksamples/s) that of the RX23E-A.

The RX23E-B microcontroller enables accurate analog signal measurements of critical parameters like strain, temperature, pressure, flow rate, current, and voltage. It also offers sufficient measurement speed to drive force sensors used in industrial robots.

In addition to a 32-MHz RXv2-based CPU with DSP instructions and a floating point unit, the RX23E-B provides a 16-bit DAC to enable measurement adjustments, self-diagnosis, and analog signal output. The MCU’s ±10-V analog input enables ±10-V measurements with a 5-V power supply without requiring external components or an additional power supply.

The RX23E-B is available now, as is a Renesas Solution Starter Kit for the MCU.

RX23E-B product page

Renesas Electronics 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Kyocera has developed a silicon nitride (SN) light source for Fourier-transform infrared (FTIR) spectrometers using its SN heater and glow plug portfolio. The company’s SN heaters are robust and fast ramping, serving as glow plugs for diesel engines and igniters for furnaces. Applied to spectrometry, Kyocera’s SN technology delivers high spectral emissivity to enable more accurate material identification.

The heater structure embeds a printed heating element in silicon nitride ceramic. Each heater pattern can be customized to meet application requirements, including such parameters as wattage, output temperature, and heating area.

The durability of the SN material results in lower failure rates and an extended duty cycle compared to conventional light source solutions. Its fracture toughness is more than twice that of silicon carbide, providing enhanced resistance to cracking and chipping during handling and installation. According to Kyocera, its SN heaters maintain consistent performance across more than 150,000 cycles without significant degradation.

For more information about Kyocera’s SN light source, click here.

Kyocera

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Hall-effect position sensors from TDK-Micronas reduce interference from stray magnetic fields in automotive and industrial applications. The HAL 3930-4100 (single die) and HAR 3930-4100 (dual die) sensors offer robust stray-field compensation and user-configurable PWM or SENT digital output interfaces. Single-die devices are ISO 26262 ASIL C-ready for integration into automotive safety-related systems.

The sensors offer a range of measurement capabilities, including 360° angular measurements, linear movement tracking, and 3D position information of a magnet. A modulo function—primarily for chassis position sensing—allows the partitioning of the 360° measurement range into smaller, more precise segments like 90°, 120°, and 180°.

Both sensors conduct self-tests when starting up and during regular operation to enhance reliability. In addition to chassis position sensing, the devices can be used to detect steering angle, transmission, gear shifter, accelerator, and brake pedal positions.

The HAL 3930-4100 is available in an SOIC8 package, while the HAR 3930-4100 is housed in an SSOP16. For more information on the TDK-Micronas lineup of 3D position sensors, click here.

TDK-Micronas

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by MORNSN POWER

This growing concern about the potential scarcity and limited availability of future energy resources from fossil fuels has allowed the new energy industry to attract much attention. Among them, energy storage is a key technology to improve the reliability of power systems and promote the consumption of new energy sources. The development of home energy storage can help household users save on electricity costs and ensure stable electricity consumption.

Home energy storage is usually installed in combination with home photovoltaic systems to provide electricity to home users, which can be well adapted to decentralized electricity demand and resource distribution. Developing and complementing together with large-scale energy storage systems, home energy storage will become an important part of a new type of power system with renewable energy as the main source, with a wide scope for development and promising prospects.

As an energy supply device, the endurance of a home energy storage system is paramount. In order to ensure that the system consumes as little power as possible in standby mode, the power supply, which is the core component of the device, is particularly important and must be considered in terms of reliability, efficiency, and low power consumption.

The key advantages of MORNSUN’s power supply for home storage system: low power consumption and ultra-wide input voltage range With a focus on innovation and advanced technology in power supply for energy storage for more than one decade, MORNSUN has been at the forefront of providing reliable and efficient power solutions. Recognizing the growing importance of home energy storage, MORNSUN has directed its efforts towards developing power supply solutions tailored to the needs of this industry.

Take MORNSUN PV75-2YBxxR3 series, home energy storage power supply as a sample,

1. Ultra-low power consumption

The battery continues to consume power even when a home storage device is in standby mode. In civil applications, the standby time is much longer than in industrial applications. Power consumption, i.e. endurance, is a key concern for users. Therefore, in order to ensure that the product consumes less power in standby mode and to improve the overall endurance, the overall standby power consumption of the system needs to be reduced. This also requires the system components to do the same.

PV75-2YBxxR3 is a special power supply for home storage application with ultra-low power consumption performance. The PV75-2YBxxR3 has a quiescent current of only 1mA at 500V input (power consumption 0.5W), which greatly reduces the loss of battery energy in long-term standby mode.

2. Ultra-wide and ultra-high input voltage range

The power of energy storage devices is generally large, the voltage range of the battery packs unit connected in series is ultra-wide and ultra-high, and the voltage fluctuation range is also large.

The PV power supply takes its power directly from the battery pack unit, so in order to convert this high voltage into usable power, an ultra-wide and ultra-high input voltage range is required for the power module.

PV75-2YBxxR3 series feature an ultra-wide high input voltage range of 80-1000VDC which can meet the requirement of the home energy storage.

3. 1.6 times high transient power

When there may be switching loads, such as contactors, relays, etc., on the back end of the home energy storage system, there will be a short period of high transient current to the power supply and the system will exceed the power supply rating. To prevent damage to the power supply or the protection function from shutting down and causing a system failure, a high transient power supply is required at the front end.

By optimizing the circuit design and component selection for high transient power design, the entire range of MORNSUN PV75-2YBxxR3 series power supplies achieves 1.6 times high transient power, with 75W in steady state and 120W in the transient state for 3s to meet system requirements.

4. UL/EN/IEC certification standard

The DC/DC converter PV75-2YBxxR3 series complies with UL1741, EN/IEC62109 certification standards, providing equipment manufacturers with peace of mind.

5. High reliability, safety, long life

Home storage needs to run for long periods of time, and the equipment is used in residential homes, while the PV system is high-voltage, so the reliability and safety of the system must be ensured. The long life of the system is also a major concern for users.

PV75-2YBxxR3 series for home energy storage features a 3-year warranty, high isolation voltages up to 4000V, and an operating temperature range of -40°C to +85°C. At the same time, it has a variety of protection functions such as input under-voltage protection and reverse polarity protection. These ensure the safety and reliability of the system.

Power solution for home energy storage system

In addition to developing a range of PV power supply products to meet market demand, MORNSUN also supports reliable application solutions and provides one-stop solutions of power supplies.

The voltage of the battery pack in a home energy storage system is high. It fluctuates over a wide range. The PV75-2YB12R3, with an ultra-wide input voltage range of 80-1000VDC, is used as the main power supply, drawing power from the battery and outputting 12V to power the display and other units.

The 12V converted into 5V via the back-end non-insolated switching regulator K7805MT-500R4 and fixed input DC/DC converter B0505MT-1WR4, power to the main MCU, and the current and voltage detection system. In addition, the MCU gives the control signal to control the contactor via the IGBT driver to turn the system on and off.

Safety performance, energy density and environmental protection are the core concepts in the development of power supplies for the energy storage industry. Today, MORNSUN’s PV power supplies have been expanded to a power range of 5-1000W and have a range of original patented technologies. They can be applied to the entire system equipment of the PV industry.

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The SIPLACE TX micron is the answer to the challenges manufacturers face in SiP (system-in-package) production. The flexible platform combines the speed of SMT assembly with the complexity of die processing. The new version of the pick-and-place machine has been significantly improved by market and innovation leader ASMPT in terms of speed and placement accuracy as well as transport and processing options. The hybrid system offers electronics manufacturers greater flexibility and thus significant competitive advantages for their Intelligent Factory.

A SiP (system-in-package) combines active and passive electronic components into compact functional groups for things like radio modules in smartphones, wireless earphones, or smartwatches. The advanced packaging technology required for this assembles dies, bare semiconductor chips, as well as classic SMT components. The high demand for such modules can only be satisfied with machines that process dies with the same high speed that is common in the SMT world and with the level of precision that is common in die processing. It involves the placement of passive SMD components, which must often be positioned very close to each other, with exceptional precision.

Two worlds and three precision classes in one machine

The SIPLACE TX micron from ASMPT fully meets these tough industrial requirements of the industry. After a further increase in the machine’s precision, three accuracy classes are now available for advanced packaging applications in a single machine: 10, 15, and 20 microns, each with a process stability of 3 sigma. Despite its improved basic accuracy from 25 to 20 microns, the machine achieves a placement speed of 93,000 cph – an increase of 14 percent compared to the previous 20-micron class of the SIPLACE TX micron. With its maximum placement accuracy of 10 microns, the machine can process an unprecedented 62,000 components per hour even in mixed SiP applications.

Larger components and boards

Thanks to its larger vacuum tooling, the SIPLACE TX micron can now process substrates measuring up to 300 by 240 millimeters with an accuracy of 15 microns @ 3 σ. New as well is the high-resolution SST54 circuit board camera with improved lighting performance for smaller structures, fiducials, and barcodes.

With the Long Board Option, the SIPLACE TX micron can process PCBs measuring up to 590 by 460 millimeters (23.2 by 18.1 inches). Also new is an optional multi-purpose conveyor system that allows regular PCBs, PCBs with carriers up to 20.5 mm high or curvatures as well as J-boats and JEDEC trays to be used as carriers. And customers who manufacture for highly demanding customers like those in the automobile industry will appreciate the optional level of traceability directly from the tape.

Now compatible with SIPLACE Tray Unit

As an added benefit for fast and uninterrupted production, the SIPLACE TX micron can now also be operated with the SIPLACE Tray Unit, which accommodates carriers that can each hold two JEDEC trays. Depending on the size of the components, up to 82 JEDEC trays or 41 wide trays measuring up to 355 by 275 millimeters fit into the unit. As a special feature, new trays can be added without having to interrupt the production because the magazine is split into a buffer zone for the continuous supply and the main storage area, which can be refilled with new trays.

Proven quality

Unchanged in the new version are established features such as the cost-saving detection of damaged or unusable components and the high-resolution component vision system with blue light that improves the image contrast for especially fine structures and balls. The SIPLACE TX micron is also certified in accordance with ISO Class 7 cleanroom requirements and Semi S2/S8.

A safe investment

“ASMPT’s product portfolio covers a wide range of areas for processing dies as well as SMT components,” explains Sylvester Demmel, Senior Product Manager at ASMPT. “To meet the changing market requirements, it was only logical for us to combine these two worlds in one machine, thus giving electronics manufacturers the opportunity to benefit from more flexibility and economic advantages for their Intelligent Factory. With its high precision and maximum placement speeds, the new SIPLACE TX micron is a future-proof investment that is profitable.”

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In a recent announcement, the Union Minister for Electronics and IT, Ashwini Vaishnaw, disclosed that India is poised to witness the establishment of three state-of-the-art semiconductor fabrication facilities, attracting an estimated investment ranging between $8-12 billion. The minister highlighted ongoing discussions with the governments of Tamil Nadu, Telangana, Gujarat, and Karnataka for the establishment of these facilities, alongside AMD’s launch of an international design center in Bengaluru.

Vaishnaw emphasized the potential of this burgeoning sector, characterizing it as a new industry for the country that will significantly contribute to the evolving manufacturing landscape of electronics, telecom, and defense electronics. Micron Technology’s investment announcement in June 2023, coupled with the initiation of facility construction in September, has instilled considerable confidence in India’s semiconductor mission.

The development also includes AMD’s strategic move to inaugurate a design center in Bengaluru, employing approximately 3,000 engineers. This center will exclusively focus on advancing semiconductor technology in areas such as machine learning, 3D stacking, and artificial intelligence. AMD’s substantial investment of $400 million over the next five years further solidifies its commitment to India.

According to an AMD spokesperson, the new research and development (R&D) center will serve as a center of excellence, concentrating on the development of various products, including high-performance CPUs for data centers and PCs, gaming GPUs (graphics processing units), and adaptive SoCs (system-on-chip) and FPGAs (field-programmable gate arrays) for embedded devices. The design center, initiated in 2004, currently hosts only 25 percent of AMD’s international workforce.

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Author : STMicroelectronics

ST is launching today the STM32WB09, thus inaugurating the STM32WB0 series and transitioning the latest generation of BlueNRG-LP(S) devices to the STM32Cube ecosystem. Architecturally, the STM32WB09 is a BlueNRG-LPS with 512 KB of flash instead of 192 KB to allow for more complex applications and an updated radio supporting all Bluetooth LE 5.2 hardware features.

However, in practical terms, the new device is ushering in a new ecosystem that marries existing solutions for STM32WBs and BlueNRGs to create a more productive and cohesive platform. For instance, the STM32WB0s will use the same Bluetooth stack as the BlueNRG-LP(S) while being a full member of the STM32Cube ecosystem. As of today, OEMs have exclusive access to the STM32WB09, and we already set public availability and support for the end of Q2 2024.

• STM32WB09: What is happening?
  • The BlueNRG-LP(S) DNA
  • The STM32Cube ecosystem promised land
• Why is this happening?
  • The success of the STM32WB
  • Making cost-effective Bluetooth applications accessible to all

The STM32WB09 shares a lot of its DNA with the BlueNRG-LPS and, as such, uses the same Cortex-M0+ and Bluetooth stack. Integrator creating cost-effective and energy-sensitive solutions will thus inherit the BlueNRG modular software stack geared toward memory footprint optimizations and performance. The stack also stands out thanks to its interoperability and maturity. Similarly, developers enjoy the same advertising extensions, 2 Mbps high-speed, 1.3 km (0.8 miles) unobstructed long-range, and angle of arrival (AoA) or departure (AoD) calculations for position tracking. Moreover, even if engineers benefit from new features, like Isochronous Channels (more on that later), they can still reuse some of the BlueNRG-LPS PCB reference designs.

ST is committing to bringing the existing BlueNRG-LP and BlueNRG-LPS to the new STM32WB0 series. The choice to release the STM32WB09 first stems from a desire to reach partners that are content with the processing capabilities of the BlueNRG-LP(S) but need the memory afforded by some of the dual-core STM32WBs. They work on entry-level applications or energy-sensitive systems that demand the lower power consumption of the BlueNRG-LPS. For instance, the typical current draw of the device in shutdown mode is only 8 nA or almost half that of an STM32WB55. The new STM32WB09 thus gives integrators the ability to enjoy tremendous power savings still while benefiting from vastly more memory.

Over time, ST will also bring some software tools and application demos from the BlueNRG ecosystem to STM32Cube. Customers have shared that some of those tools have helped them optimize their workflow, and we want to ensure that the transition doesn’t rob them of the tools they’ve been relying on. Put simply, we are creating a unified portfolio to ensure developers can move up and down the price-per-performance ladder more easily, making this announcement a pivotal moment for our community.

The initiative behind the STM32WB0 series partly stems from customers requesting to use the STM32Cube ecosystem with their BlueNRG devices. Hence, the STM32WB09 will enjoy the support of tools like STM32CubeMX and STM32CubeIDE that help with the initialization process. We are also working on updating STM32CubeProgrammer to debug and flash the device and STM32CubeMonitor-RF to optimize RF performances. Consequently, in time, moving from an STM32WBx to an STM32WB0 will be as simple as changing settings in STM32CubeMX and configuring a different pin-out. Applications will thus gain in portability, making Bluetooth systems more accessible.

While we are working on a unified experience, one of the challenges will be to create a cohesive ecosystem that enables developers to port their code from one device to another seamlessly. Similarly, such a massive software transition demands careful planning and extensive support to avoid breaking projects. It’s why we are first working with OEMs and ask that customers contact their ST representative. Working directly with developers will ensure a more efficient transition and smoother experience before we make the STM32WB09 and its STM32Cube ecosystem support available to all.

The announcement of the first STM32WB in 2018 was so significant that it disrupted high-end Bluetooth applications. For the first time, the radio and the Cortex-M0+ core driving the wireless stack sat right next to a Cortex-M4, thus allowing developers to create vastly more powerful applications without blowing up their bill of materials. For instance, the Jammy E guitar-shaped MIDI controller wouldn’t have been possible without the STM32WB running the Bluetooth MIDI profile. In fact, the idea of an all-in-one solution became so appealing that we released the STM32WB5MMG soon after. The module houses an STM32WB55, the antenna, baluns, and crystals, further facilitating the creation of powerful Bluetooth systems.

Early this year, we released the STM32WBA, the first wireless Cortex-M33, thus showing our desire to provide powerful and secure systems since the STM32WBA opens the door to a SESIP Level 3 certification. However, teams looking to create more cost-effective solutions significantly favored BlueNRG. The SoCs remain popular, and ST just updated its portfolio to release the smallest BlueNRG-LPS yet at only 6.9 mm2 without compromising features or its +8 dBm power, making them one of the best price-per-feature ratio in the industry. Today’s STM32WB0 series is thus a testament to the success of the BlueNRGs and the STM32WBs as it harmonizes our portfolio while keeping our extensive price umbrella.

The fact that the STM32WB09 also showcases a Bluetooth LE 5.3-certified radio means that engineers get to enjoy features like Isochronous Channels, a new PHY layer that enables more complex data streams by ensuring the transmission of time-sensitive and synchronized information. However, more than adding to a list of specifications, the Bluetooth LE 5.2 radio is symbolic because it shows that besides being cost-effective, like the BlueNRG-LP(S) the STM32WB09 is also cost-competitive like the STM32WBs. Hence, more than a rebranding, the STM32WB09 is a new beginning for the engineers working on Bluetooth applications.

Read the full article at https://blog.st.com/stm32wb09/

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