Semiconductor today

At the 71st IEEE International Electron Devices Meeting (IEDM 2025) in San Francisco (6–10 December), nanoelectronics research center imec of Leuven, Belgium, presented what it claims is breakthrough performance of (with Imax as high as 690µA/µm) for p-type FETs with monolayer tungsten diselenide (WSe2) channels, and improved fab-compatible modules for source/drain contact formation and gate stack integration...

At the 71st IEEE International Electron Devices Meeting (IEDM 2025) in San Francisco on 10 December, Japan’s NTT Inc of Tokyo, Japan presented what it it claims is the first amplification of millimeter-wave high-frequency signals used in wireless communications in aluminium nitride (AlN)-based transistors (Kawasaki et al, ‘First RF Operation of AlGaN-channel Polarization-Doped FETs with Average Al-content Over 0.75’). It has achieved this by designing a low-resistance structure...

Semiconductor and photonics manufacturer CHIPX of Dublin, Ireland plans to establish an 8-inch wafer fabrication facility in Malaysia, the first of its kind in the ASEAN (Association of Southeast Asian Nations) region. The facility will introduce gallium nitride on silicon carbide (GaN/SiC) manufacturing, driving Malaysia’s entry into front-end semiconductor production and accelerating domestic capability in photonics, high-bandwidth optical interconnects, and advanced materials engineering essential to next-generation AI and high-performance compute systems...

Advanced Energy Inc of Denver, CO, USA (which designs and manufactures precision power conversion, measurement and control solutions) has introduced a new dual-output 24V/24V module for its NeoPower family of configurable power supplies, delivering up to 400W (200W per output) in a compact 2.5-inch form factor...

Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced an expansion of its distribution agreement with Avnet, making Avnet a globally franchised strategic distribution partner...

Fabless company Wise Integration of Hyeres, France, together with switched-mode power supply (SMPS) manufacturer Powernet Technologies Corp and power semiconductor firm KEC Corp (both of Seoul, South Korea), have signed a strategic memorandum of understanding (MoU) to co-develop next-generation SMPS solutions designed specifically for AI server applications in South Korea. The partnership aligns with the South Korea’s push to expand AI infrastructure and build out the next generation of high-density data centers...

Cornell University has developed a new transistor architecture for high-power wireless electronics that addresses supply chain vulnerabilities for gallium (‘XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates’, Advanced Electronic Materials, 29 November 2025...

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its third-generation QSiC MOSFET product line, including devices with what is claimed to be an industry-leading current density and thermal resistance...

Infineon Technologies AG of Munich, Germany has launched new packages for its CoolSiC MOSFET 750V G2 technology, engineered to deliver the highest system efficiency and power density in automotive and industrial power conversion applications. This latest innovation is now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical RDS(on) values up to 60mΩ at 25°C...

VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride (GaN) transistors – has announced the second closing of its Round B funding, securing $26m. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia (HKMC) joining as a strategic investor...

A new UK-Canada technology partnership is building an advanced optical engine designed to make the world’s AI data centers faster, more efficient and more sustainable...

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — says that its automotive MOSFETs will power onboard charger systems for Toyota...

Following its entry into the MSCI Canada Small Cap Index on 24 November, specialty semiconductor and performance materials producer 5N Plus Inc (5N+) of Montréal, Québec, Canada has been included in the S&P/TSX Composite Index, effective prior to the open of trading on 22 December...

BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has appointed CEO Jim Haden as executive director, subject to obtaining a director’s ID...

Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – has closed its private placement for the purchase and sale of an aggregate of 1,025,643 shares of common stock (or pre-funded warrants in lieu thereof), series A warrants to purchase up to 1,025,643 shares and short-term series B warrants to purchase up to 1,025,643 shares at a purchase price of $1.95 per share (or per pre-funded warrant in lieu thereof) and accompanying warrants priced at-the-market under Nasdaq rules...

Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — and ASIC/ASSP and power solutions provider Cyient Semiconductor Pte Ltd of Hyderabad, India have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete end-to-end GaN ecosystem...

Ascent Solar Technologies Inc of Thornton, CO, USA – which designs and makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) panels that can be integrated into consumer products, off-grid applications and aerospace applications – has entered into a definitive agreement for the purchase and sale of an aggregate of 1,025,643 shares of common stock (or pre-funded warrants in lieu thereof), series A warrants to purchase up to 1,025,643 shares of common stock, and short-term series B warrants to purchase up to 1,025,643 shares of common stock at a purchase price of $1.95 per share (or per pre-funded warrant in lieu thereof) and accompanying warrants in a private placement priced at-the-market under Nasdaq rules...

Epiwafer and substrate maker IQE plc of Cardiff, Wales, UK has signed a multi-year extension to its strategic agreement with Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes photonics products for optical networks and lasers for industrial and consumer markets) for the supply of epiwafers supporting advanced sensing technologies...

KnowMade has released its ‘Q3 2025 GaN Patent Monitor’, which highlights major gallium nitride (GaN) innovation trends in third-quarter 2025, the evolving competitive IP landscape, and the technological advances shaping future power and RF electronics...