Semiconductor today

Metallium Ltd of Subiaco, Western Australia, says that its US subsidiary Flash Metals USA Inc of Houston, TX, USA has executed a long-term offtake agreement with materials refiner and manufacturer Indium Corp of Clinton, NY, USA, covering the supply of gallium (Ga), germanium (Ge) and other critical metals recovered using Metallium’s Flash Joule Heating technology...

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month

At the Optical Fiber Communication Conference and Exhibition (OFC 2026) in Los Angeles (15–19 March), Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA (a designer and manufacturer of optical and hybrid fibre-coaxial networking products for AI data centers, cable TV and broadband fiber access networks) demonstrated how its solutions support modern data centers with the bandwidth, power and density needed for future AI systems...

Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA (a designer and manufacturer of optical and hybrid fibre-coaxial networking products for AI data centers, cable TV and broadband fiber access networks) has received a new volume order from one of its major hyperscale customers for 800G single-mode data-center transceivers to help expand its network capacity for AI-driven workloads...

Toshiba Corp of Kawasaki, Japan has signed a memorandum of understanding (MoU) to start discussions regarding a business integration of the semiconductor business of its subsidiary Toshiba Electronic Devices & Storage Corp (TDSC), the semiconductor business of ROHM Co Ltd, and the power device business of Mitsubishi Electric Corp. The MoU was signed with Japan Industrial Partners Inc (JIP), TBJ Holdings Corp (TBJH), ROHM, and Mitsubishi Electric...

The EXPRESS program, a five-year, £10.4m UK Engineering and Physical Sciences Research Council (EPSRC)-funded project led by the University of Warwick and University of Southampton, is to support the development of next-generation transistor and optoelectronic devices...

Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has completed its private placements (announced on 19 March) of...

Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes photonics products for optical networks and lasers for industrial and consumer markets) plans to establish a new US manufacturing facility in Greensboro, North Carolina. The 240,000ft2 facility will produce indium phosphide (InP)-based optical devices that serve as critical components in the world’s largest AI data centers...

To strengthen its global competitiveness, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany is to build a new manufacturing facility in Malaysia in order to tap into the fast growing semiconductor equipment ecosystem in South East Asia...

Polar Light Technologies AB — which stems from research by founder professor Per-Olof Holtz and his team at Linköping University (with support from Sweden’s innovation agency Vinnova) — has been awarded a European Union (EU) Eurostars grant.With a total budget of €1.1m, the 18-month project ‘2ndGenMicroLED’ aims to deliver the first dual-color micro-LED micro-display prototype built on a bottom-up pyramidal LED architecture. Finetech GmbH & Co KG of Berlin, Germany (a supplier of sub-micron and high-accuracy die bonding solutions) joins the consortium, contributing its expertise in high-accuracy die attach and advanced packaging...

Taiwan Semiconductor Co Ltd (TSC) of New Taipei City, Taiwan — which supplies discrete power electronics devices, LED drivers, analog ICs, transient voltage suppressor (TVS), and electrostatic discharge (ESD) protection — has added to its growing series of automotive-grade 1200V-rated silicon carbide (SiC) Schottky diodes with 1A and 2A models. The TSCDFS01120G2H and TSCDFS02120G2H diodes, respectively, are claimed to offer exceptional performance in the industry’s only SOD-128 packages...

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has released the GRF2118, an ultra-low-noise X-band amplifier delivering what is claimed to be best-in-class noise figure performance across the 6.0–8.5GHz band. Targeting the most demanding receive applications in satellite communications, defense electronics and space-borne platforms, the GRF2118 establishes a new performance benchmark for COTS X-band LNA solutions, it is claimed...

At the Bharat Electricity Summit (BES 2026) in Yashobhoomi, New Delhi (19–21 March), Infineon Technologies AG of Munich, Germany announced a strategic technology partnership with Zenergize, an emerging Indian company designing and manufacturing AI-integrated power electronics hardware for the solar, EV charging, and renewable energy sectors. Infineon has had a presence in India for nearly 30 years, and currently has over 2500 staff across four sites...

Infineon Technologies AG of Munich, Germany and solid-state transformer (SST) solutions firm DG Matrix are partnering to enhance the efficiency of power conversion required to connect AI data centers and industrial power applications to the public grid. As part of the collaboration, DG Matrix will source latest-generation silicon carbide (SiC) technology from Infineon for use in its Interport multi-port solid-state transformer platform. This should strengthen DG Matrix’s semiconductor supply chain and enhance the efficiency, power density and reliability of its SST systems, which are deployed worldwide...

Power Integrations Inc of San Jose, CA, USA (which provides high-voltage integrated circuits for energy-efficient power conversion) has introduced a flyback topology that extends the power range of flyback converters to 440W — well beyond the limits that traditionally required more complex resonant and LLC topologies. The new TOPSwitchGaN flyback IC family unites the company’s PowiGaN technology with its TOPSwitch IC architecture, reducing complexity, eliminating heat-sinks in many cases, shortening design time, improving manufacturability, and lowering total system cost...

Power Integrations Inc of San Jose, CA, USA (which provides high-voltage integrated circuits for energy-efficient power conversion) has introduced a flyback topology that extends the power range of flyback converters to 440W — well beyond the limits that traditionally required more complex resonant and LLC topologies. The new TOPSwitchGaN flyback IC family unites the company’s PowiGaN technology with its TOPSwitch IC architecture, reducing complexity, eliminating heat-sinks in many cases, shortening design time, improving manufacturability, and lowering total system cost...

In booth #1753 at the Applied Power Electronics Conference (APEC 2026) at the Henry B. Gonzalez Convention Center in San Antonio, Texas, USA (22–25 March), Toshiba America Electronic Components Inc – the North American semiconductor and storage business of Tokyo-based semiconductor maker Toshiba Corp – is highlighting its latest power semiconductor technologies enabling more intelligent, efficient and sustainable system designs...

In booth #1753 at the Applied Power Electronics Conference (APEC 2026) at the Henry B. Gonzalez Convention Center in San Antonio, Texas, USA (22–25 March), Toshiba America Electronic Components Inc – the North American semiconductor and storage business of Tokyo-based semiconductor maker Toshiba Corp – is highlighting its latest power semiconductor technologies enabling more intelligent, efficient and sustainable system designs...

Renesas Electronics Corp of Tokyo, Japan has introduced what is claimed to be the industry’s first bidirectional switch using depletion-mode (d-mode) GaN technology, capable of blocking both positive and negative currents in a single device with integrated DC blocking. Targeting single-stage solar micro-inverters, AI data centers and onboard electric vehicle chargers, the high-voltage TP65B110HRU simplifies power converter designs and replaces conventional back-to-back FET switches with a single low-loss, fast-switching, easy-to-drive device...

Renesas Electronics Corp of Tokyo, Japan has introduced what is claimed to be the industry’s first bidirectional switch using depletion-mode (d-mode) GaN technology, capable of blocking both positive and negative currents in a single device with integrated DC blocking. Targeting single-stage solar micro-inverters, AI data centers and onboard electric vehicle chargers, the high-voltage TP65B110HRU simplifies power converter designs and replaces conventional back-to-back FET switches with a single low-loss, fast-switching, easy-to-drive device...