Semiconductor today

Aeluma Inc of Goleta, CA, USA says that, on 25 May at the Compound Semiconductor Week (CSW2026) conference in Kumamoto, Japan (24-28 May), its president & CEO Jonathan Klamkin Ph.D. will receive the Indium Phosphide and Related Materials (IPRM) Award for pioneering contributions to indium phosphide (InP) and gallium arsenide (GaAs) photonic and electronic materials and devices, and their heterogenous integration on mismatched substrates...

In booth#544 (Hall 9) at PCIM 2026 (Expo & Conference on Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) in Nuremberg, Germany (9–11 June), Navitas Semiconductor Corp of Torrance, CA, USA is showcasing its latest gallium nitride (GaN) and silicon carbide (SiC) products for AI data-center, energy and grid infrastructure, and industrial electrification...

In booth#544 (Hall 9) at PCIM 2026 (Expo & Conference on Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) in Nuremberg, Germany (9–11 June), Navitas Semiconductor Corp of Torrance, CA, USA is showcasing its latest gallium nitride (GaN) and silicon carbide (SiC) products for AI data-center, energy and grid infrastructure, and industrial electrification...

On stand 304 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2026) Expo & Conference in Nuremberg, Germany (9–11 June), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — is showcasing its newest-generation GaN technology for humanoid robotics, drones and compact electrified motion systems...

On stand 304 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2026) Expo & Conference in Nuremberg, Germany (9–11 June), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — is showcasing its newest-generation GaN technology for humanoid robotics, drones and compact electrified motion systems...

Infineon Technologies AG of Munich, Germany has expanded its CoolGaN BDS 40V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S...

Infineon Technologies AG of Munich, Germany has expanded its CoolGaN BDS 40V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S...

A team of faculty at Texas Tech University’s Edward E. Whitacre Jr. College of Engineering has received about $4.5m from the Texas Semiconductor Innovation Fund (TSIF) for the project ‘Research and Development of Wide/Ultrawide Bandgap Semiconductor Materials, Devices and Applications’...

A team of faculty at Texas Tech University’s Edward E. Whitacre Jr. College of Engineering has received about $4.5m from the Texas Semiconductor Innovation Fund (TSIF) for the project ‘Research and Development of Wide/Ultrawide Bandgap Semiconductor Materials, Devices and Applications’...

Wolfspeed Inc of Durham, NC, USA has introduced two new 3.3kV silicon carbide (SiC) power module families – including high-power half-bridge baseplate modules and scalable full-bridge baseplate-less modules in industry-standard footprints — that are purpose-built to address the rapidly approaching power constraints driven by AI data centers and the broader energy transition. Meeting this moment requires power generation, conversion and distribution that is faster, smaller, more efficient, cost-effective, and more resilient than anything silicon alone can deliver. These new module families are said to give engineers the tools to modernize energy infrastructure across the entire energy life-cycle...

Wolfspeed Inc of Durham, NC, USA has introduced two new 3.3kV silicon carbide (SiC) power module families – including high-power half-bridge baseplate modules and scalable full-bridge baseplate-less modules in industry-standard footprints — that are purpose-built to address the rapidly approaching power constraints driven by AI data centers and the broader energy transition. Meeting this moment requires power generation, conversion and distribution that is faster, smaller, more efficient, cost-effective, and more resilient than anything silicon alone can deliver. These new module families are said to give engineers the tools to modernize energy infrastructure across the entire energy life-cycle...

Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers...

Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers...

Coordinated by Infineon Technologies AG of Munich, Germany, the European semiconductor R&D project Moore4Power (More than Moore for Disruptive Innovations in Power Electronics) has been officially launched...

BluGlass Ltd of Silverwater, Australia has demonstrated-record gallium nitride (GaN) laser single-mode performance – achieving 1.9W of peak output power from a single-spatial-mode 450nm-wavelength blue GaN laser in a single monolithic chip. This is a 52% improvement over its previous record of 1.25W of single-spatial-mode power...

Modelithics Inc of Tampa, FL, USA, which provides RF and microwave simulation models for electronic design automation (EDA), says that new high-power gallium nitride GaN models from Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — have been added to the Modelithics COMPLETE Library. These new nonlinear models were developed through Guerrilla RF’s collaboration with Modelithics via the Sponsoring MVP (Modelithics Vendor Partner) Program...

The UK’s Compound Semiconductor Applications (CSA) Catapult says that it is a core technology partner in project SONATA, which is funded by the ATI Programme, to develop an on-aircraft electric taxi system with regenerative braking and energy recovery...

ams OSRAM AG of Premstaetten, Austria, and Munich, Germany has sold its CMOS Image Sensor business to Automotive semiconductor and software platform provider indie Semiconductor Inc of Aliso Viejo, CA, USA for €40m, comprising €35m in cash and a €5m seller’s note payable after two years...

Specialty analog foundry Tower Semiconductor Ltd of Migdal Haemek, Israel has signed silicon photonics (SiPho) contracts for $1.3bn for 2027 revenue with its largest customers, and the receipt of $290m in customers’ prepayments for capacity reservation. This initial commitment is further reinforced by an even larger contractual wafer commitment for 2028, for which additional associated prepayments are due by January 2027...

Malta Government Venture Capital (MGVC) has approved investment under its co-investment framework to support the growth of Quinas Technology Ltd of London, UK (which was spun off from Lancaster University in early 2023)...