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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity
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Partstat and WIN Semiconductors forge strategic partnership
Supply chain solutions firm Partstat of Winter Springs, FL, USA (which specializes in semiconductor storage and inventory ownership) has announced a strategic partnership with WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets. The collaboration aims to provide comprehensive long-term storage solutions for semiconductors, including die and wafer banking...
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Beneq Transform ALD cluster tool qualified for GaN power device production by tier-1 Asian manufacturer
Beneq of Espoo, Finland says that its Transform atomic layer deposition (ALD) cluster tool has been qualified for volume production of gallium nitride (GaN)-based power devices on 8-inch GaN-on-silicon wafers by a tier-1 GaN power device manufacturer in Asia...
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BluGlass completes $2.3m placement and launches up to $6m share purchase plan
BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has received $2.3m in commitments from institutional and sophisticated investors and the board and management via an oversubscribed share placement at an issue price of $0.013 per share. BluGlass is also undertaking a share purchase plan (SPP offer) to enable eligible shareholders in Australia and New Zealand to acquire up to $100,000 worth of shares at the lower of $0.013 or a 2.5% discount to the 5-day volume-weighted average price (VWAP) for shares prior to the closing date for the SPP offer...
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SMD opens R&D Innovation Hub at CSA Catapult in Newport
A Malaysian semiconductor company has opened a new R&D Innovation Hub in Wales and signalled its intent to work with UK companies on designing next-generation semiconductor chips...
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Wolfspeed’s CFO to leave firm at end of May
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has mutually agreed with Neill Reynolds to conclude his role as executive VP & chief financial officer, effective 30 May, to pursue another professional opportunity...
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UV-C LED disinfection system maker AquiSense closes Series A investment round
AquiSense Inc of Erlanger, KY, USA (which designs and makes UV-C LED water disinfection systems) has secured Series A investment led by Burnt Island Ventures, following a recent management buyout. Additional investment comes from a local Kentucky Capital Fund and returning private seed investors led by Randy Knapmeyer. Funds will be used to accelerate growth in a broad range of water treatment applications including beverage, pharmaceutical, oil & gas and municipal...
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Fraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes
At the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg (6–8 May), Fraunhofer Institute for Applied Solid State Physics IAF of Freiburg, Germany is presenting results achieved as part of the three-year project ‘GaN4EmoBiL — GaN power semiconductors for electro-mobility and system integration through bidirectional charging’ launched in mid-2023 and funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK)...
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Latest issue of Semiconductor Today now available
For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine...
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Infineon launches CoolSiC MOSFET 750V G2 technology
Infineon Technologies AG of Munich, Germany has launched CoolSiC MOSFET 750V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750V G2 technology offers a granular portfolio with typical RDS(on) values up to 60mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS...
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Seoul Semi’s micro-LED patents infringed by Laser Components, judges Unified Patent Court
South Korea-based Seoul Semiconductor Co Ltd says that the Local Division Paris of the Unified Patent Court (UPC), which has jurisdiction across 18 European countries, has issued a judgment that its affiliate’s core optical semiconductor patent was infringed by Laser Components SAS of Meudon, France, a global distributor offering electronic components across USA, Europe, and Canada...
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Semikron Danfoss’ module with ROHM’s latest 2kV SiC MOSFETs integrated into SMA’s large-scale solar system
SMA Solar Technology AG (a global specialist in photovoltaic and storage system technology) has adopted Germany-based power electronics firm Semikron Danfoss’ SEMITRANS 20 module with ROHM’s latest 2kV silicon carbide (SiC) MOSFETs inside its new large-scale solar system Sunny Central FLEX, a modular platform designed to streamline and enhance grid connections for large-scale photovoltaic installations, battery storage systems, and emerging technologies...
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Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Novel Crystal Technology Inc (NCT) of Saitama, Japan has developed a gallium oxide vertical MOS transistor (β-Ga2O3 MOSFET) with a record power figure of merit (PFOM, VBR2/Ron,SP) of 1.23GW/cm2, 3.2 times higher than the previous record (presented at the 72nd Japan Society of Applied Physics (JSAP) Spring Meeting 2025 on 15 March)...
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Navitas strengthens corporate governance
To advance its growth strategy, gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced corporate governance enhancements that are said to reflect the board of directors’ ongoing commitment to stockholder engagement and value creation for stakeholders...
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Northeast Microelectronics Coalition awards $1.43m to 19 firms through PROPEL Operations Program
The Northeast Microelectronics Coalition (NEMC) Hub has announced $1,432,373 in awards to 19 startups and small businesses through its Powering Regional Opportunities for Prototyping Microelectronics (PROPEL) Operations Program, which helps companies to reach commercial readiness by reducing day-to-day costs that include software licensing, employee training, securing patents and cybersecurity services, hence accelerating the transition of technologies from laboratories to fabrication facilities and preparing for new commercial investments...
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ROHM adds high-power-density 4-in-1 and 6-in-1 SiC power modules in HSDIP20 package
ROHM has announced the availability of OEM quantities of new 4-in-1 and 6-in-1 silicon carbide (SiC) molded modules in the HSDIP20 package optimized for PFC(power factor correction) and LLC (inductor-inductor-capacitor) converters in on-board chargers (OBC) for xEV electric vehicles. The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications...
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ROHM adds high-power-density 4-in-1 and 6-in-1 SiC power modules in HSDIP20 package
ROHM has announced the availability of OEM quantities of new 4-in-1 and 6-in-1 silicon carbide (SiC) molded modules in the HSDIP20 package optimized for PFC(power factor correction) and LLC (inductor-inductor-capacitor) converters in on-board chargers (OBC) for xEV electric vehicles. The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications...
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SemiLEDs’ quarterly revenue growth boosted by buy-sell purchase orders of equipment
For its fiscal second-quarter 2025 (to end-February), LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has reported revenue of $10.87m, up from just $1.26m last quarter and $0.89m a year ago...
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NS Nanotech boosts power of far-UVC disinfection light source by over 60%
NS Nanotech Inc of Ann Arbor, MI, USA — a University of Michigan Electrical and Computer Engineering (ECE) spin-off co-founded by professor Zetian Mi in 2017 that develops gallium nitride nanowire LEDs for visible displays and UVC disinfection applications — has increased the power output of its far-UVC ShortWaveLight 215 semiconductor emitter by more than 60% to deliver more effective human-safe disinfection of air and surfaces in occupied spaces. Version 1.1 of the ShortWaveLight 215 Emitter generates 500μW of radiant energy, enough power to constantly disinfect a cubic meter of air in an office cubicle, automobile interior, airplane cabin, or other confined space...
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Navitas showcasing advances in GaN and SiC technologies at PCIM, including first production-released 650V bi-directional GaNFast ICs
In booth #544 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is exhibiting several GaN and SiC breakthroughs in AI data centers, electric vehicles (EVs), motor drives, and industrial applications...
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Navitas showcasing advances in GaN and SiC technologies at PCIM, including first production-released 650V bi-directional GaNFast ICs
In booth #544 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is exhibiting several GaN and SiC breakthroughs in AI data centers, electric vehicles (EVs), motor drives, and industrial applications...
Категорії: Новини світу мікро- та наноелектроніки