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Toshiba releases third-generation SiC MOSFETs with reduced switching losses
Toshiba is now shipping the TWxxxZxxxC series of ten silicon carbide (SiC) MOSFETs based on the firm’s third-generation technology, targeted at reducing losses in a variety of industrial applications including switching power supplies for servers & data centers, electric vehicle (EV) charging stations, photovoltaic (PV) inverters and uninterruptible power supplies (UPS)...
Categories: Новини світу мікро- та наноелектроніки
POET and JV partner SPX demonstrating 800G OSFP optical transceivers at CIOE
In booth #11C63at the 24th China International Optoelectronics Expo (CIOE 2023) in Shenzhen (6–8 September), POET Technologies Inc of Toronto, Ontario, Canada — designer and developer of the POET Optical Interposer, photonic integrated circuits (PICs) and light sources for the data-center, telecom and artificial intelligence (AI) markets — is giving live demonstrations of end-to-end optical solutions for 800G, 400G and 200G optical transceivers using its highly integrated optical engines...
Categories: Новини світу мікро- та наноелектроніки
SweGaN gains former Ericsson CEO as senior advisor
SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board member in leading tech companies – has joined it as a senior advisor...
Categories: Новини світу мікро- та наноелектроніки
Latest issue of Semiconductor Today now available
For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine...
Categories: Новини світу мікро- та наноелектроніки
Toshiba ships first 2200V dual SiC MOSFET module
Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has begun volume shipments of what it reckons is the industry’s first 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment...
Categories: Новини світу мікро- та наноелектроніки
EPCSpace adds rad-hard GaN devices in high-current G-Package
EPC Space LLC of Haverhill, MA, USA has introduced two new radiation-hardened (rad-hard) gallium nitride (GaN) transistors with ultra-low on-resistance and high-current capability for high-power-density solutions that are said to be lower cost and more efficient than the nearest comparable rad-hard silicon MOSFET. The devices are supplied in hermetic packages in very small footprints. ..
Categories: Новини світу мікро- та наноелектроніки
Transphorm’s GaN powers first integrated micro-inverter PV systems by DAH Solar
Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that its GaN platform is powering the first integrated photovoltaic (PV) systems from DAH Solar Co Ltd. The PV systems are used in DAH Solar’s new SolarUnit product line. DAH Solar credits Transphorm’s GaN FETs with enabling it to produce smaller, lighter and more reliable solar panel systems that also offer higher overall power generation with lower energy consumption...
Categories: Новини світу мікро- та наноелектроніки
NUBURU appoints John Bolton to board
NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — has appointed attorney, diplomat, consultant and political commentator John Bolton to its board of directors, providing strategic insight to support efforts to expand its presence in the defense, energy and aerospace markets as well as guidance on the impact of international relations and regulations on the firm’s business and customer base...
Categories: Новини світу мікро- та наноелектроніки
Navitas unveiling new power platform at SEMICON Taiwan
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA says that, as part of its display in booth J2238 (Hall 1) at SEMICON Taiwan 2023 in the Nangang Exhibition Center (TaiNEX) in Taipei (6–8 September) – which it is sponsoring – it is revealing a new, high-performance wide-bandgap power platform...
Categories: Новини світу мікро- та наноелектроніки
CVD Equipment appoints Ashraf Lotfi to board
CVD Equipment Corp of Central Islip, NY, USA (a designer and maker of chemical vapor deposition, physical vapor transport, gas and chemical delivery control systems, and other equipment and process solutions for developing and manufacturing materials and coatings) has appointed Dr Ashraf Lotfi to its board of directors, which has also approved an expansion of the number of directors from the current level of five to six...
Categories: Новини світу мікро- та наноелектроніки
Wolfspeed selling RF business to MACOM for $125m
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide materials as well as silicon carbide (SiC) and gallium nitride (GaN) power-switching & RF semiconductor devices — has agreed to sell its radio frequency business (Wolfspeed RF) to MACOM Technology Solutions Inc of Lowell, MA, USA (which designs and makes RF, microwave, analog and mixed-signal and optical semiconductor technologies) for about $75m in cash (subject to a customary purchase price adjustment) plus 711,528 shares of MACOM common stock, valued at $50m based on its 30 trading day average through 21 August...
Categories: Новини світу мікро- та наноелектроніки
Instrument Systems joins MicroLED Industry Association
Light measurement technology firm Instrument Systems GmbH of Munich, Germany (which was founded in 1986 and has been a subsidiary of Konica MinoIta Group since 2012) has become a member of the MicroLED Industry Association (MIA), supporting the development and implementation of μLED display technologies...
Categories: Новини світу мікро- та наноелектроніки
Wolfspeed’s margins fall further while 200mm SiC device fab ramp-up lags
For its fiscal full year (to end-June), Wolfspeed Inc of Durham, NC, USA – which makes silicon carbide materials as well as silicon carbide (SiC) and gallium nitride (GaN) power-switching & RF semiconductor devices – has reported revenue growth of 24%, from $746.2m in 2022 to $921.9m for 2023, due to the strength in both materials and power device product lines...
Categories: Новини світу мікро- та наноелектроніки
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Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes optical and photonic products for optical networks and lasers for industrial and consumer markets) has reported full-year revenue growth of 3.2% from $1712.6m in fiscal 2022 to $1767m for fiscal 2023 (ended 1 July)...
Categories: Новини світу мікро- та наноелектроніки
US DOE renews funding for PowerAmerica Institute
The US Department of Energy (DOE)’s Advanced Materials and Manufacturing Technologies Office (AMMTO) has announced renewed funding for PowerAmerica, a public–private research initiative established in 2014 that is the DOE’s first Clean Energy Manufacturing Innovation Institute...
Categories: Новини світу мікро- та наноелектроніки
Spark Connected and Infineon unveil 500W industrial wireless charging module
Spark Connected of Dallas, TX, USA (which develops wireless power technology for industrial, automotive, aerospace and consumer applications) and Infineon Technologies AG of Munich, Germany, have announced the market release of the Yeti 500W ready-to-integrate wireless charging module, targeted at industrial machinery, autonomous mobile robots, automated guided vehicles (AGVs), light electric vehicles (LEVs), e-Mobility and other power-intensive applications...
Categories: Новини світу мікро- та наноелектроніки
Wolfson grant to boost Swansea University’s Centre for Integrative Semiconductor Materials
Swansea University in south Wales, UK has received a grant from the Wolfson Foundation (an independent charity with a focus on research and education) that will provide a boost to its Centre for Integrative Semiconductor Materials (CISM)...
Categories: Новини світу мікро- та наноелектроніки
UbiQD expands collaboration with First Solar on quantum dot-enhanced solar modules
Nanotechnology firm UbiQD Inc of Los Alamos, NM, USA has entered into a joint development agreement with cadmium telluride (CdTe) thin-film photovoltaic (PV) module maker First Solar Inc of Tempe, AZ, USA to collaborate further on developing the potential to incorporate fluorescent quantum dot technology in advanced solar modules. The two firms have been conducting exploratory work since early 2022, and the initial results have supported the new, more formalized joint-development effort...
Categories: Новини світу мікро- та наноелектроніки
Infineon and Chicony Power collaborate on GaN-based PD3.1 notebook adapter
Taiwan-based power supply maker Chicony Power Technology is expanding its partnership with Infineon Technologies AG of Munich, Germany to increase the performance of its latest PD3.1 notebook adapter series. The two firms aim to provide end-customers with highly efficient power solutions, based on gallium nitride (GaN), with a smaller form factor and higher power density...
Categories: Новини світу мікро- та наноелектроніки
German industrial customer orders automated Riber MBE 412 production system
Riber S.A. of Bezons, France – which makes molecular beam epitaxy (MBE) systems as well as evaporation sources – says that a German industrial customer has placed a multi-million Euro order for an automated MBE 412 system, for delivery in 2024, to be used to produce optoelectronic devices. More specifically, the machine is designed to passivate laser facets, in particular gallium arsenide (GaAs)-based quantum dot lasers, covering a wide range of applications: LiDAR, fiber-optic communications, cloud networking, etc...
Categories: Новини світу мікро- та наноелектроніки
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