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Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that TDK-Lambda Corp (a group company of TDK), which makes power conversion products for industrial and medical equipment, has expanded its GaN-based PFH500F product line...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7019, a 40V, 1.5mΩ, 530APulsed radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) in a small 13.9mm2 footprint. The EPC7019 has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). The devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA...

At the Optical Fiber Conference (OFC 2022) in San Diego, CA, USA (8-10 March), POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center and telecom markets — gave live demonstrations of its recently announced 200G FR4 Transmit and 400G FR4 Receive Optical Engines...

POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center and telecom markets — has reported that, as a response to the temporary lockdown resulting from a COVID-19 outbreak in Shenzhen, critical development activities have been absorbed by Singapore and other locations...

Wolfspeed Inc of Durham, NC, USA – which makes silicon carbide materials as well as silicon carbide (SiC) and gallium nitride (GaN) power-switching & RF semiconductor devices, for applications such as electric vehicles (EVs), fast charging, 5G, renewable energy and storage, and aerospace & defense – says that Jeff Ferraro has joined it as VP of enterprise supply chain & procurement...

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) says that its high-efficiency semiconductor products have been selected to power the flagship Samsung Galaxy S22+ and Ultra smartphones, enabling the slim and powerful 45W charger to deliver on the efficiency and fast-charging promise of GaN. The 45W charger is claimed to set a new benchmark in power density and efficiency...

Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan, together with Osaka University, says that it has succeeded in increasing the diameter of substrates for gallium nitride (GaN) power devices, by leveraging its expertise in GaN semiconductors such as blue LEDs and ultraviolet (UV-C) LEDs...

Riber S.A. of Bezons, France – which designs and makes molecular beam epitaxy (MBE) systems and evaporators – has received an order from EPIR Inc of Bolingbrook, IL, USA (a subsidiary of Sivananthan Laboratories Inc) for an MBE 32P MCT research system to expand its manufacturing base...

NeoPhotonics Corp of San Jose, CA, USA – a vertically integrated designer and manufacturer of silicon photonics and hybrid photonic integrated circuit (PIC)-based lasers, modules and subsystems for high-speed communications – has reported full-year revenue of $290.3m for 2021, down 22% on $371.2m in 2020 as it replaces the revenue base of its largest customer in 2020. However, revenue from customers other than Huawei grew by 17% year-on-year...

POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center and telecom markets — says that its common shares have begun trading on the Nasdaq Capital Market under the symbol ‘POET’ as of the market opening on 14 March...

For fourth-quarter 2021, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €180.9m (the highest for 10 years), up 38% on €130.8m in Q3 and up 67% on €108.1m a year ago...

As part of the call for projects ‘Industry Stimulus Plan - Strategic Sectors’ launched by the France’s Ministry of Industry, Riber S.A. of Bezons, France – which designs and makes molecular beam epitaxy (MBE) systems and evaporators – has been awarded public funding to finance its 300mm pilot line...

For fourth-quarter 2021, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $37.7m, exceeding both the initial guidance range of $34-36m (provided on 27 October) and the increased guidance range of $36–$37m. Despite usually being a down quarter for AXT, this is up 9% on $34.6m last quarter and up 40% on $27m a year ago, representing an eighth consecutive quarter of growth and a fourth consecutive quarter over $30m...

Engineered substrate manufacturer Soitec has announced a new fabrication facility at its headquarters in Bernin, near Grenoble, France, primarily to manufacture new silicon carbide (SiC) wafers targeted at the electric vehicle (EV) and industrial markets. The extension will also support Soitec’s 300mm silicon-on-insulator (SOI) activities...

POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center and telecom markets — says that its common shares have been approved for listing and are expected to begin trading on the Nasdaq Capital Market under the symbol ‘POET’ on 14 March...

In booth #1324 at the 37th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, Texas (20-24 March), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) is showcasing its lineup of power electronics solutions, including the following...

In booth 825 at the 37th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, Texas (20-24 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — is hosting in-production products from customers representing a broad range of markets. Also, its engineering experts are presenting several technological innovations driving both the usability and adoption of GaN industry-wide...

As the materials with currently the most development potential, the output value of ‘third-generation’ power semiconductors – i.e. wide-bandgap (WBG) semiconductors with high-power and high-frequency characteristics, including silicon carbide (SiC) and gallium nitride (GaN), that are used mainly in electric vehicles (EVs) and the fast-charging battery market – is rising at a compound annual growth rate (CAGR) of 48% from $980m in 2021 to $4.71bn in 2025, reckons market research firm TrendForce...

In booth #534 at the Applied Power Electronics Conference (APEC 2022) in Houston, TX, USA (20-24 March), Nexperia B.V. of Nijmegen, the Netherlands (a subsidiary of Wingtech Technology Co Ltd) is demonstrating its latest developments in power electronics, spanning a range of recent innovations including...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has announced the availability of the EPC9160, a dual-output synchronous buck converter reference design board operating at 2MHz switching frequency that converts an input voltage of 9-24V to a 3.3-5V output voltage and delivers up to 15A continuous current for both outputs...