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China’s Innoscience and Taiwan’s WPG sign global distribution agreement
Innoscience Technology of Suzhou, China has signed a global distribution agreement with WPG Holdings of Taipei, Taiwan (the world’s largest electronics distributor, according to Gartner Research, with 5000 staff in 80 sales offices), giving customers worldwide access to its high- and low-voltage normally-off (enhancement-mode) GaN high-electron-mobility transistors (HEMTs)...
Categories: Новини світу мікро- та наноелектроніки
EV car maker NIO selects onsemi’s silicon carbide traction power modules
Power semiconductor IC supplier onsemi of Phoenix, AZ, USA says that China-based car maker NIO Inc has chosen its latest VE-Trac Direct SiC power modules for its next-generation electric vehicles (EVs). The silicon carbide (SiC)-based power modules enable longer range, higher efficiency and faster acceleration for EVs...
Categories: Новини світу мікро- та наноелектроніки
Qorvo/UnitedSiC launches 1200V Gen 4 SiC FETs
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched the new UF4C/SC next-generation series of 1200V Gen 4 silicon carbide (SiC) field-effect transistors (FETs) with what are claimed to be industry-leading figures of merit in on-resistance:...
Categories: Новини світу мікро- та наноелектроніки
Mitsubishi Electric adds 400A, 1200V dual module to SiC power device lineup
Mitsubishi Electric has launched the FMF400DY-24B, a 400A, 1200V dual silicon carbide (SiC) MOSFET power module that includes an anti-parallel, low Vf, zero-recovery-loss SiC Schottky barrier diode (SBD)...
Categories: Новини світу мікро- та наноелектроніки
5N Plus partners with Rio Tinto for domestic supply of tellurium
Specialty semiconductor and performance materials producer 5N Plus Inc of Montreal, Québec, Canada has reached a commercial agreement with Rio Tinto to refine the tellurium to be produced at global mining group Rio Tinto’s Kennecott copper operation in Utah...
Categories: Новини світу мікро- та наноелектроніки
ST cooperating with Semikron to integrate SiC power technology in EV drives
STMicroelectronics of Geneva, Switzerland says it is supplying silicon carbide (SiC) technology for the eMPack electric vehicle (EV) power modules made by Semikron of Nuremberg, Germany...
Categories: Новини світу мікро- та наноелектроніки
ROHM highlights new power semiconductor developments and SiC capacity investment
At Power, Control and Intelligent Motion (PCIM) Europe 2022 in Nürnberg Messe, Nuremberg, Germany (10–12 May), ROHM Semiconductor Europe has introduced its new power semiconductor solutions focusing on e-mobility and energy conversion applications. In addition, the firm announced its European and global business activities, strategies and silicon carbide (SiC) investment plans...
Categories: Новини світу мікро- та наноелектроніки
GaN Systems and Phihong debut highest-power-density gaming laptop power supply
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) and power supply company Phihong Technology have announced the debut of Phihong’s 280W GaN charger (claimed to be the industry’s highest-power-density power supply for gaming laptops)...
Categories: Новини світу мікро- та наноелектроніки
IQE unveils first commercially available 200mm VCSEL wafer
Epiwafer and substrate maker IQE plc of Cardiff, UK has announced what is said to be the world’s first commercially available 200mm (8”) vertical-cavity surface-emitting laser (VCSEL) epiwafer...
Categories: Новини світу мікро- та наноелектроніки
Lumentum’s quarterly revenue falls 5.7% year-on-year to $395.4m
For its fiscal third-quarter 2022 (ended 2 April), Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes photonics products for optical networks and lasers for industrial and consumer markets) has reported revenue of $395.4m, down 11.5% on $446.7m last quarter and 5.7% on $419.5m a year ago...
Categories: Новини світу мікро- та наноелектроніки
Navitas upgrades GaN IC power by 50% for EV, solar and data-center applications
GaN power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland has launched the NV6169, a new high-power 650/800V-rated GaNFast power IC with GaNSense technology to address higher-power applications such as 400-1000W 4K/8K TVs and displays, next-generation gaming systems, 500W solar micro-inverters, 1.2kW data-center SMPS (switched-mode power supplies), and up to 4kW/5hp motor drives...
Categories: Новини світу мікро- та наноелектроніки
GaN Systems and xFusion announce first 100W/in3 data-center power supply
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) and computing power infrastructure and services provider xFusion Digital Technologies Co Ltd have introduced the xFusion 3kW PSU, which – with its compact dimensions of 68mm x 183mm x 40.5mm – is claimed to be the first power supply unit with power density of 100W/in3, as well as 80 Plus Titanium efficiency of 96%...
Categories: Новини світу мікро- та наноелектроніки
Infineon extends CoolSiC portfolio to 2kV voltage class
The increasing demand for high power density is pushing developers to adopt 1500VDC links in their applications to increase the rated power-per-inverter and reduce system costs. However, 1500VDC-based systems also pose more challenges on the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads to a complicated design and a relatively high number of components...
Categories: Новини світу мікро- та наноелектроніки
IQE enters micro-LED market in partnership with Porotech
Epiwafer and substrate maker IQE plc of Cardiff, UK has announced a strategic partnership with Porotech (a spin off from the Cambridge Centre for Gallium Nitride at the UK’s University of Cambridge that has developed porous GaN material)...
Categories: Новини світу мікро- та наноелектроніки
EPC ships smallest 100V, 2mΩ GaN FET
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has expanded its range of low-voltage, off-the-shelf gallium nitride (GaN) transistors with the introduction of the EPC2071 (1.7mΩ typical, 100V) GaN field-effect transistor (FET)...
Categories: Новини світу мікро- та наноелектроніки
Navitas ships 50 millionth GaN IC
GaN power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland (which was founded in 2014) has announced what it says is an industry-first achievement of 50 million units shipped – with zero reported GaN-related field failures. To celebrate, a Navitas GaN wafer was presented to customer vivo...
Categories: Новини світу мікро- та наноелектроніки
Rhombus using Wolfspeed’s 1200V SiC MOSFETs for faster EV charging infrastructure
Electric vehicle (EV) charging and power conversion system provider Rhombus Energy Solutions of San Diego, CA, USA says that its EV2flex line of charging infrastructure products is to be supplied with silicon carbide MOSFETs made by Wolfspeed Inc of Durham, NC, USA, enabling greater efficiency, higher power density and faster charging times. Specifically, Wolfspeed’s 1200V SiC MOSFETs will power the EV2flex-120...
Categories: Новини світу мікро- та наноелектроніки
AXT Q1 revenue grows 26% year-on-year, driven by 45% growth in InP
For first-quarter 2022, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported a ninth consecutive quarter of revenue growth, to $39.7m (near the top end of the guidance range of $38-40m). This is up 5% on $37.7m last quarter and 26% on $31.4m a year ago, highlighting market share gains and expansion into new applications and tier-1 opportunities...
Categories: Новини світу мікро- та наноелектроніки
NeoPhotonics Q1 revenue grows 47% year-on-year, despite chip supply chain shortages
For first-quarter of 2022, NeoPhotonics Corp of San Jose, CA, USA – a vertically integrated designer and manufacturer of silicon photonics and hybrid photonic integrated circuit (PIC)-based lasers, modules and subsystems for high-speed communications – has reported revenue of $89.3m, up 11% on $80.6m last quarter and up 47% on $60.9m a year ago due to more than 70% growth in 400G-and-above capable products to $54m (61% of total revenue up from 56% last quarter and 52% a year ago). This is despite the impacts of semiconductor chip shortages. Supply chain shortages negatively impacted revenue by about $10m, but these were primarily shortages of analog and power semiconductors...
Categories: Новини світу мікро- та наноелектроніки
NexGen showcasing Vertical GaN-based power systems at PCIM
In booth 500 (Hall 7) at the Power Conversion Intelligent Motion (PCIM) Europe 2022 in Nuremberg, Germany (10-12 May), NexGen Power Systems Inc of Santa Clara, CA, USA – which was founded in 2017 to design and manufacture proprietary power conversion systems using patented Vertical GaN (gallium nitride) technologies – is showcasing what it says is the world’s smallest, lightest and most efficient commercial power systems built on 1.2kV, 1+MHz Vertical GaN with Repeated Avalanche and >10µs Short-Circuit Protection...
Categories: Новини світу мікро- та наноелектроніки
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