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Light detection & ranging (LiDAR) solution provider Voyant Photonics of Long Island City, NY, USA has announced the availability of the CARBON frequency-modulated continuous wave (FMCW) LiDAR sensor, featuring what is claimed to be the first truly effective and affordable LiDAR on a chip with solid-state beam steering...

The US Department of Energy (DOE) has announced $179m in funding for three Microelectronics Science Research Centers (MSRCs), which will perform basic research in microelectronics materials, device and system design, and manufacturing science to transform future microelectronics technologies...

At the 37th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, TX, USA (20-24 March), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has launched its 300W Audio Boost Converter SMPS (switch-mode power supply)...

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that its SuperGaN FETs are being used in the new 3.6kW power supply of Hangzhou Boco Electronics Co Ltd. The 12V AC-to-DC power supply achieves a peak efficiency of greater than 96% and is designed to be used in rugged environments caused by ultra-demanding applications such as crypto-mining rigs and high-performance data-center systems...

NXP Semiconductors N.V. of Eindhoven, The Netherlands has announced a collaboration with Hitachi Energy to accelerate the adoption of silicon carbide (SiC) power semiconductor modules in e-mobility. The project aims to provide more efficient, reliable and functionally safe SiC MOSFET-based solutions for powertrain inverters consisting of NXPs GD3160 single-channel high-voltage (HV) isolated gate drivers and Hitachi Energy’s RoadPak automotive SiC MOSFET power modules...

High-power blue laser technology firm NUBURU Inc of Centennial, CO, USA (which was founded in 2015) has appointed Brian Knaley as chief financial officer, overseeing all aspects of finance and investor relations as the firm accelerates and implements its growth strategy to expand the presence of its blue laser technology across target markets...

MICLEDI Microdisplays B.V. of Leuven, Belgium, a fabless developer of micro-LED arrays for high-end augmented reality (AR) glasses, has announced a manufacturing collaboration with GlobalFoundries (GF) of Malta, NY, USA (which has operations in Singapore, Germany and the USA), aiming to enable AR glasses to achieve the brightness, resolution, power, size and economies of scale needed to become affordable for consumers...

Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland has announced a 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and electric vehicle (EV) markets, it is reckoned...

Power Integrations of San Jose, CA, USA, which provides high-voltage integrated circuits for energy-efficient power conversion, has launched the HiperPFS-5 family of power-factor correction (PFC) ICs, which have an integrated 750V PowiGaN gallium nitride switch. With efficiency of up to 98.3%, the new ICs deliver up to 240W without a heat sink and can achieve a power factor of better than 0.98. HiperPFS-5 ICs are suitable for high-power USB PD adapters, TVs, game consoles, all-in-one computers and appliances...

Microchip Technology Inc of Chandler, AZ, USA has expanded its silicon carbide (SiC) portfolio with the release of what is claimed to be the lowest on-resistance (RDS(on)) 3.3kV SiC MOSFETs and highest current-rated SiC Schottky barrier diodes (SBDs) available in the market, enabling system designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy infrastructure solutions to take advantage of ruggedness, reliability and performance. With the expansion of its SiC portfolio, Microchip says that designers are equipped with the tools to develop smaller, lighter and more efficient solutions for electrified transportation, renewable energy, aerospace and industrial applications...

In booth #1324 at the 37th annual Applied Power Electronics Conference (APEC 2022) in Houston, Texas (20-24 March), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) together with power conversion R&D company Rompower Energy Systems Inc of Tucson, AZ, USA are displaying what are claimed to be industry firsts - the smallest 65W and 100W GaN chargers offering the highest efficiency and best power density...

Specialty semiconductor and performance materials producer 5N Plus Inc of Montreal, Québec, Canada says that its board of directors has appointed Gervais Jacques as president & CEO. Jacques has been interim president & CEO since 1 December 2021. He remains a member of the board...

Sandia National Laboratories has fabricated and tested a gallium nitride (GaN)-based electronic device that can shunt excess electricity within a few billionths of a second while operating at a record 6400V — a step towards protecting the electric grid from an electromagnetic pulse (Yates et al, ‘Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions’, IEEE Transactions on Electron Devices; DOI: 10.1109/TED.2022.3154665). The team’s ultimate goal is to provide protection from voltage surges, which could lead to months-long power interruptions, with a device that operates at up to 20,000V...

Infineon Technologies AG of Munich, Germany has launched a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use and cost-effective top performance. Building on Infineon’s SiC trench technology and come in a compact D2PAK SMD 7-pin package with .XT interconnection technology, the devices target high-power applications including servers, telecom, industrial switch-mode power supplies (SMPS), fast electric vehicle (EV) charging, motor drives, solar energy systems, energy storage, and battery formation...

Marking its debut appearance at the (Applied Power Electronics Conference (APEC) (20-24 March), fabless semiconductor company Cambridge GaN Devices Ltd (CGD) has emerged from stealth mode to launch its first portfolio of products, which are capable of reducing power losses by up to 50%. CGD has launched the ICeGaN 650V H1 series comprising four 650V products that utilise GaN-based technology...

Funded by the German Federal Ministry of Education and Research (BMBF) for three years as part of the ‘Green ICT’ initiative, Fraunhofer Institutes IAF (Institute for Applied Solid State Physics, in Freiburg) and IIS (Institute for Integrated Circuits, in Erlangen) - together with the Institute for Sustainable Systems Engineering (INATECH) at the University of Freiburg and multiple industrial partners – have begun the implementation phase of the project ‘EdgeLimit-Green ICT’, which aims to develop and test an energy-efficient edge-cloud system for mobile radio base stations by 2025, making use of aluminium scandium nitride (AlScN)-based components and demand-driven control...

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that TDK-Lambda Corp (a group company of TDK), which makes power conversion products for industrial and medical equipment, has expanded its GaN-based PFH500F product line...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7019, a 40V, 1.5mΩ, 530APulsed radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) in a small 13.9mm2 footprint. The EPC7019 has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). The devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA...

At the Optical Fiber Conference (OFC 2022) in San Diego, CA, USA (8-10 March), POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center and telecom markets — gave live demonstrations of its recently announced 200G FR4 Transmit and 400G FR4 Receive Optical Engines...

POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center and telecom markets — has reported that, as a response to the temporary lockdown resulting from a COVID-19 outbreak in Shenzhen, critical development activities have been absorbed by Singapore and other locations...