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UK’s Universities of Cambridge and Southampton join PIXEurope pilot line consortium
The UK’s University of Cambridge and University of Southampton have been named as participants in the PIXEurope consortium, a collaboration between research organizations from across Europe that is developing and manufacturing prototypes of their products based on photonic chips...
Categories: Новини світу мікро- та наноелектроніки
Aeluma showcasing next-gen sensor and silicon photonic solutions at SPIE Defense + Commercial Sensing
Aeluma Inc of Goleta, CA, USA — which develops compound semiconductor materials on large-diameter substrates — is showcasing its latest advances in AI-driven photonics, quantum computing, and advanced sensing solutions at SPIE Defense + Commercial Sensing 2025 at the Gaylord Palms Resort & Convention Center in Orlando, Florida (13–17 April)...
Categories: Новини світу мікро- та наноелектроніки
Wise-integration showcasing next-gen GaN power solutions at APEC
At the IEEE Applied Power Electronics Conference & Exposition (APEC 2025) in the Georgia World Congress Center, Atlanta, GA, USA (16–20 March), fabless company Wise-integration of Hyeres, France — which was spun off from CEA-Leti in 2020 and designs and develops digital-control of gallium nitride (GaN) and GaN integrated circuits for power conversion — is unveiling its latest WiseGan and WiseWare advances, featuring two technical presentations and demonstration boards, including a new 1.5kW totem-pole power factor correction (PFC) module designed specifically for server and industrial applications...
Categories: Новини світу мікро- та наноелектроніки
Keysight adds wide-bandgap power semiconductor bare chip dynamic measurement to double-pulse test portfolio
Keysight Technologies Inc of Santa Rosa, CA, USA has enhanced its double-pulse test portfolio, enabling customers to benefit from accurate and easy measurement of the dynamic characteristics of wide-bandgap (WBG) power semiconductor bare chips. The technologies implemented in the measurement fixture minimize parasitics and do not require soldering to the bare chip. The fixtures are compatible with both versions of Keysight’s double-pulse testers...
Categories: Новини світу мікро- та наноелектроніки
Follow up, my first SMD PCB, digital oscilloscope
![]() | submitted by /u/_RoseDagger [link] [comments] |
Categories: Новини світу мікро- та наноелектроніки
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Categories: Новини світу мікро- та наноелектроніки
Selfmade RGB Cube. What do you think?
![]() | submitted by /u/Dry_Sport6031 [link] [comments] |
Categories: Новини світу мікро- та наноелектроніки
Found a way to keep my ICs organized and safe
![]() | submitted by /u/antek_g_animations [link] [comments] |
Categories: Новини світу мікро- та наноелектроніки
Smartphone production grows 9.2% in Q4/2024 to 334.5 million units
Market research firm TrendForce reports that global smartphone production grew 9.2% quarter-to-quarter to 334.5 million units in fourth-quarter 2024, driven by Apple’s peak production season and consumer subsidies from local Chinese governments. While Apple expanded production with the launch of new models, Samsung faced production declines due to intensified competition in emerging markets...
Categories: Новини світу мікро- та наноелектроніки
Navitas production-releases first 650V bi-directional GaNFast ICs and isolated gate-drivers
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced the first production-released 650V bi-directional GaNFast ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies. Targeted applications range widely and opens up multi-billion dollar market opportunities across electric vehicle (EV) charging (on-board chargers (OBC) and roadside), solar inverters, energy storage and motor drives...
Categories: Новини світу мікро- та наноелектроніки
Infineon’s CoolSiC Schottky diode 2000V made available in TO-247-2 package
Many industrial applications are transitioning to higher power levels with minimized power losses, which can be achieved by increasing the DC link voltage. Infineon Technologies AG of Munich, Germany is hence addressing this market trend with the CoolSiC Schottky diode 2000V G5 product family, which are claimed to be the first discrete silicon carbide diodes with a breakdown voltage of 2000V, introduced in September 2024...
Categories: Новини світу мікро- та наноелектроніки
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