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Aeluma’s CEO Jonathan Klamkin to receive IPRM Award

Semiconductor today - Fri, 05/22/2026 - 15:30
Aeluma Inc of Goleta, CA, USA says that, on 25 May at the Compound Semiconductor Week (CSW2026) conference in Kumamoto, Japan (24-28 May), its president & CEO Jonathan Klamkin Ph.D. will receive the Indium Phosphide and Related Materials (IPRM) Award for pioneering contributions to indium phosphide (InP) and gallium arsenide (GaAs) photonic and electronic materials and devices, and their heterogenous integration on mismatched substrates...

GHz-harvested power for Gbps wireless link is a double win

EDN Network - Fri, 05/22/2026 - 15:00

A clever millimeter-wave lens enables a high-speed, backscatter-powered GHz-band link.

Wireless system designers are often asked to deliver on seemingly incompatible and contradictory goals such as supporting ultrahigh wireless data rates, and do so at ultralow power. Accomplishing this, even if possible, is a challenge which may require lots of technical “tricks”  including advanced techniques, custom components, and more.

Now, a team at Georgia Institute of Technology (better known as Georgia Tech) has demonstrated a what they call a first-of-its-kind lens-enabled backscatter system capable of multi-gigabit data rates. At the same time, this backscatter-powered system operates using only a fraction of the power required by conventional wireless devices, therefore bringing high-speed connectivity to disbursed systems.

In general, due to power constraints, backscatter has typically been used only to send small amounts of data, most often in simple identification and sensing systems. However, the researchers say that backscatter doesn’t have to be slow and can operate at gigabit‑per‑second speeds while remaining ultra‑low power—with the right architecture. They foresee applications such as battery-free sensors embedded throughout smart cities and with digital infrastructure for a localized IoT arrangement.

Their lens-enabled backscatter system is capable of multi-gigabit data rates, reaching up to 4 gigabits per second (Gbps) (Figure 1). This dielectric lens focuses incoming millimeter-wave energy (such as from 5G systems) onto an array of tiny antenna elements, allowing both wireless energy capture and high‑speed backscatter communication within the same system.


Figure 1 A close‑up view of the device displays an array of tiny antenna elements positioned behind the lens, each modulating reflected wireless signals to enable high‑speed communication with minimal energy use. (Image source: Georgia Tech School of Electrical and Computer Engineering)

Signals at these frequencies are highly directional and sensitive to alignment; even a small misalignment can break the link. Their lens overcomes that constraint by enabling high gain and wide angular coverage simultaneously, without the need for active beam steering.

The system that can communicate over a ±55-degree field. In their tests, the researchers achieved data rates of up to 4 Gbps with sustained gigabit communication at distances of up to 20 meters, using high-order modulation schemes like those used in modern cellular networks. The system is extremely efficient and requires just 0.08 picojoules per bit. The link-budget analysis projects 1 Gbps back-scatter ranges up to 2.6 km under the 75 dBm effective Isotropic radiated power (EIRP) that is permitted in 5G millimeter-wave systems.

At the core of the millimeter-wave identification (mmID) is a broadband, cross-polarized antenna designed to operate across the full 26–30 GHz band. A broadband element is essential to sustain gigabit-level backscatter, since narrow- band operation would constrain throughput and increase distortion under high-order modulation. Cross-polarization is critical at mmWave, as a co-polarized backscatter would be masked by strong transmitter-receiving coupling from the reader.

To meet these requirements, they implemented a single-layer, capacitively coupled patch antenna designed in CST Microwave Studio and fabricated on Rogers 3003 (εr = 3:00, tan δ = 0:0013), with thickness of 0.254 mm (Figure 2).


Figure 2 a) Layout of the cross-polarized capacitive-coupled patch antenna with dimensions W = 2.85 mm, LS = 1.1 mm, and GC = 0.12 mm. b) Measured vs. Simulated S11 results of the broadband antenna. c) Layout of the FET-based mmWave modulator with dimensions R1 = 1.11 mm and R2 = 1.24 mm. d) Measured vs. Simulated S21 results of the mmWave modulator network. e) Layout of the pixel backscatter element, comprised of the broadband antenna and FET-based wireless mixer. (Image source: Nature Communications)

Gigabit backscatter at mmWave frequencies requires an antenna module that delivers both high gain and wide angular coverage. A dielectric lens provides an efficient solution, acting as a passive focusing element that concentrates incident energy onto the pixel. A key contributor to this long-range performance is the PTFE dielectric lens, which passively concentrates incident mm-wave energy onto the pixel element in a manner analogous to an optical lens. To extend the single pixel design into a practical mmID with wide angular coverage, a 25-element broadband cross-polarized pixel array was implemented, arranged in three concentric rings with a central element (Figure 3).


Figure 3 a) Proposed broadband cross-polarized mmID featuring 25 antenna elements with dimensions L1 = 26 mm, L2 = 52 mm, L3 = 78 mm, W = 90 mm, S = 13 mm, and R3 = 1.35 mm. b) Proposed PTFE lens with dimensions labeled D1 = 74 mm, D2 = 120 mm, and h = 25 mm. (Image source: Nature Communications)

The team performed extensive tests spanning a range of frequency bands, data formats, modulation types, and more, with detailed quantitative results summarized in various tables (Figure 4). They have shown that it is possible to extract GHz-range ambient-RF energy effectively using a printed lens-like antenna.


Figure 4 a) Experimental setup of the proposed lens-based mmID at incidence angles of 0∘ and 55∘ from the PoC reader. b) Block diagram of the PoC reader transmitting and receiving chain to interrogate the lens-based mmID and demodulate the gigabit per second data-rate backscatter. (Image source: Nature Communications)

The detailed project is a fascinating investigation and exploration into RF-based energy harvesting and ultralow-power systems design, without speed compromise. It is described in detail in their readable paper “Broadband multi-beam lens-assisted mmID enabling multi-gigabit backscatter data rates for next-generation wireless networks” published in Nature Communications.

What’s your view on the innovation and cleverness of this project? Is it as impressive as they maintain, or just a well-crafted and analyzed implementation of existing ideas? Is it yet another attention-getting energy-harvesting scheme with added gigahertz connectivity, or does it represent a genuine advance?

Bill Schweber is a degreed senior EE who has written three textbooks, hundreds of technical articles, opinion columns, and product features. Prior to becoming an author and editor, he spent his entire hands-on career on the analog side by working on power supplies, sensors and signal conditioning, and wired and wireless communication links. His work experience includes many years at Analog Devices in applications and marketing, and he also developed significant mechanical-engineering insight while designing control electronics for large materials-testing systems.

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The post GHz-harvested power for Gbps wireless link is a double win appeared first on EDN.

Navitas showcasing GaN and SiC-based solutions for AI data-center, energy and grid infrastructure, and industrial electrification at PCIM

Semiconductor today - Fri, 05/22/2026 - 14:06
In booth#544 (Hall 9) at PCIM 2026 (Expo & Conference on Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) in Nuremberg, Germany (9–11 June), Navitas Semiconductor Corp of Torrance, CA, USA is showcasing its latest gallium nitride (GaN) and silicon carbide (SiC) products for AI data-center, energy and grid infrastructure, and industrial electrification...

Navitas showcasing GaN and SiC-based solutions for AI data-center, energy and grid infrastructure, and industrial electrification at PCIM

Semiconductor today - Fri, 05/22/2026 - 14:06
In booth#544 (Hall 9) at PCIM 2026 (Expo & Conference on Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) in Nuremberg, Germany (9–11 June), Navitas Semiconductor Corp of Torrance, CA, USA is showcasing its latest gallium nitride (GaN) and silicon carbide (SiC) products for AI data-center, energy and grid infrastructure, and industrial electrification...

EPC showcasing GaN power solutions at PCIM

Semiconductor today - Fri, 05/22/2026 - 13:53
On stand 304 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2026) Expo & Conference in Nuremberg, Germany (9–11 June), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — is showcasing its newest-generation GaN technology for humanoid robotics, drones and compact electrified motion systems...

EPC showcasing GaN power solutions at PCIM

Semiconductor today - Fri, 05/22/2026 - 13:53
On stand 304 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2026) Expo & Conference in Nuremberg, Germany (9–11 June), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — is showcasing its newest-generation GaN technology for humanoid robotics, drones and compact electrified motion systems...

Infineon adds devices to CoolGaN BDS 40V G3 family

Semiconductor today - Fri, 05/22/2026 - 13:41
Infineon Technologies AG of Munich, Germany has expanded its CoolGaN BDS 40V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S...

Infineon adds devices to CoolGaN BDS 40V G3 family

Semiconductor today - Fri, 05/22/2026 - 13:41
Infineon Technologies AG of Munich, Germany has expanded its CoolGaN BDS 40V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S...

Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D

Semiconductor today - Fri, 05/22/2026 - 13:01
A team of faculty at Texas Tech University’s Edward E. Whitacre Jr. College of Engineering has received about $4.5m from the Texas Semiconductor Innovation Fund (TSIF) for the project ‘Research and Development of Wide/Ultrawide Bandgap Semiconductor Materials, Devices and Applications’...

Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D

Semiconductor today - Fri, 05/22/2026 - 13:01
A team of faculty at Texas Tech University’s Edward E. Whitacre Jr. College of Engineering has received about $4.5m from the Texas Semiconductor Innovation Fund (TSIF) for the project ‘Research and Development of Wide/Ultrawide Bandgap Semiconductor Materials, Devices and Applications’...

Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints

Semiconductor today - Fri, 05/22/2026 - 12:55
Wolfspeed Inc of Durham, NC, USA has introduced two new 3.3kV silicon carbide (SiC) power module families – including high-power half-bridge baseplate modules and scalable full-bridge baseplate-less modules in industry-standard footprints — that are purpose-built to address the rapidly approaching power constraints driven by AI data centers and the broader energy transition. Meeting this moment requires power generation, conversion and distribution that is faster, smaller, more efficient, cost-effective, and more resilient than anything silicon alone can deliver. These new module families are said to give engineers the tools to modernize energy infrastructure across the entire energy life-cycle...

Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints

Semiconductor today - Fri, 05/22/2026 - 12:55
Wolfspeed Inc of Durham, NC, USA has introduced two new 3.3kV silicon carbide (SiC) power module families – including high-power half-bridge baseplate modules and scalable full-bridge baseplate-less modules in industry-standard footprints — that are purpose-built to address the rapidly approaching power constraints driven by AI data centers and the broader energy transition. Meeting this moment requires power generation, conversion and distribution that is faster, smaller, more efficient, cost-effective, and more resilient than anything silicon alone can deliver. These new module families are said to give engineers the tools to modernize energy infrastructure across the entire energy life-cycle...

Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers

Semiconductor today - Fri, 05/22/2026 - 12:44
Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers...

Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers

Semiconductor today - Fri, 05/22/2026 - 12:44
Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers...

Візит Президента України до КПІ

Новини - Fri, 05/22/2026 - 12:27
Візит Президента України до КПІ
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kpi пт, 05/22/2026 - 12:27
Текст

🤝 До Дня науки КПІ ім. Ігоря Сікорського вкотре став майданчиком для зустрічі Президента України з науковою спільнотою. Глава держави ознайомився з новітніми українськими досягненнями й розробками, серед яких — результати наукових досліджень КПІ.

Відкритий діалог «ШІ: Україна 2.0 і покоління, що її будує»

Новини - Fri, 05/22/2026 - 12:23
Відкритий діалог «ШІ: Україна 2.0 і покоління, що її будує»
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KPI4U-2 пт, 05/22/2026 - 12:23
Текст

Штучний інтелект, цифровізація держави та роль молоді у створенні цифрового майбутнього України. КПІшники взяли участь у відкритому діалозі «ШІ: Україна 2.0 і покоління, що її будує» разом з експертами й фахівцями, які сьогодні стоять за цифровою трансформацією нашої держави.

КПІ ім. Ігоря Сікорського вітає з Днем вишиванки!

Новини - Fri, 05/22/2026 - 11:58
КПІ ім. Ігоря Сікорського вітає з Днем вишиванки!
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kpi пт, 05/22/2026 - 11:58
Текст

🇺🇦 📜 21 травня — особливий день, сповнений тепла, єдності та українських сенсів. Цьогоріч Дню вишиванки виповнюється 20 років, і для нашого університету воно давно стало доброю традицією. Щороку в цей день кампус наповнюється людьми у вишитих сорочках, барвистими орнаментами, теплими зустрічами, усмішками й особливою атмосферою, що об’єднує покоління політехніків.

Вручено Премії імені професора Булдигіна за 2026 рік

Новини - Fri, 05/22/2026 - 11:53
Вручено Премії імені професора Булдигіна за 2026 рік
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kpi пт, 05/22/2026 - 11:53
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Переможцям І етапу Всеукраїнської олімпіади з математики. Троценку Петру (ФМФ) та Шиффу Євгенію (НН ФТІ) вручено Премії імені професора Булдигіна.

Infineon-led European project Moore4Power launches

Semiconductor today - Fri, 05/22/2026 - 11:17
Coordinated by Infineon Technologies AG of Munich, Germany, the European semiconductor R&D project Moore4Power (More than Moore for Disruptive Innovations in Power Electronics) has been officially launched...

BluGlass achieves record 1.9W peak output for single-mode GaN laser

Semiconductor today - Fri, 05/22/2026 - 11:05
BluGlass Ltd of Silverwater, Australia has demonstrated-record gallium nitride (GaN) laser single-mode performance – achieving 1.9W of peak output power from a single-spatial-mode 450nm-wavelength blue GaN laser in a single monolithic chip. This is a 52% improvement over its previous record of 1.25W of single-spatial-mode power...

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