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🇺🇦🇮🇹 IX День італійського дизайну

Новини - Fri, 02/07/2025 - 18:30
🇺🇦🇮🇹 IX День італійського дизайну
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kpi пт, 02/07/2025 - 18:30
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🇺🇦🇮🇹 Запрошуємо на IX День італійського дизайну «Нерівні умови. Дизайн задля кращого життя», який цьогоріч відбудеться у КПІ ім. Ігоря Сікорського. Особлива увага приділятиметься адаптації простору, щоб зробити його більш доступним та інклюзивним.

НАЗК оголосило добір на 5 вакансій

Новини - Fri, 02/07/2025 - 17:03
НАЗК оголосило добір на 5 вакансій
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kpi пт, 02/07/2025 - 17:03
Текст

Перевірка декларацій, аналіз корупційних ризиків у сфері безпеки та оборони, HR, ІТ та стратегічне планування: НАЗК оголосило добір на 5 вакансій

Inside a siemens softstarter

Reddit:Electronics - Fri, 02/07/2025 - 13:09
Inside a siemens softstarter

I really like the flexible section instead of using a connector or soldering it in place.

submitted by /u/Rockroxx
[link] [comments]

📰 Газета "Київський політехнік" № 5-6 за 2025 (.pdf)

Новини - Fri, 02/07/2025 - 13:05
📰 Газета "Київський політехнік" № 5-6 за 2025 (.pdf)
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kpi пт, 02/07/2025 - 13:05
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Вийшов 5-6 номер газети "Київський політехнік" за 2025 рік

🎥 Друга автономна сонячна електростанція у КПІ ім. Ігоря Сікорського!

Новини - Fri, 02/07/2025 - 11:19
🎥 Друга автономна сонячна електростанція у КПІ ім. Ігоря Сікорського!
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kpi пт, 02/07/2025 - 11:19
Текст

Сьогодні відбулося відкриття нової сонячної електростанції і відтепер 43 панелі потужністю 580 Вт кожна забезпечуватимуть безперебійну роботу Центру колективного користування науковим обладнанням «Матеріалознавство тугоплавких сполук та композитів» (навчальний корпус №9, Навчально-науковий інститут матеріалознавства та зварювання імені Є. О. Патона), до якого входять, зокрема, лабораторії пробопідготовки; електронної та оптичної мікроскопії; рентгенівського дифрактометричного аналізу.

Rad-tolerant RF switch works up to 50 GHz

EDN Network - Thu, 02/06/2025 - 21:22

Teledyne’s TDSW050A2T wideband RF switch operates from DC to 50 GHz with low insertion loss and high isolation. The radiation-tolerant device, fabricated with 150-nm pHEMT InGaAs technology, is well-suited for complex aerospace and defense applications.

Based on a MMIC design process, the reflective SPDT switch maintains high performance across frequencies, including millimeter-wave bands. It has a typical input P1dB of 23 dBm and port isolation of 23 dB at 50 GHz. The TDSW050A2T operates from ±5-V power supplies with minimal DC power consumption and is controlled with TTL-compatible voltage levels.

The switch withstands 100 krads (Si) TID, making it useful for satellite systems exposed to radiation. It meets MIL-PRF-38534 Class K equivalency for space applications and operates over an extended temperature range of -40°C to +85°C. The TDSW050A2T is supplied as a 1.15×1.47×0.1-mm die for hybrid assembly integration.

The TDSW050A2T RF switch is available now for immediate shipment from Teledyne HiRel and authorized distributors.

TDSW050A2T product page

Teledyne HiRel Semiconductors

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Vishay expands SiC Schottky diode portfolio

EDN Network - Thu, 02/06/2025 - 21:22

Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the best trade-off between capacitive charge (QC) and forward voltage drop in their class.

The recently released components include dual diodes in parallel configuration with total forward current ratings ranging from 40 A to 240 A, along with single-phase bridge devices rated at 50 A and 90 A. The diodes feature a forward voltage drop as low as 1.36 V, reducing conduction losses and improving efficiency. They also offer better reverse recovery parameters than Si-based diodes, with virtually no recovery tail.

The SOT-227 package aids efficiency through improved thermal management and reduced parasitic inductance and resistance. The diodes’ low QC down to 56 nC enables high-speed switching, while their industry-standard package provides a drop-in replacement for competing solutions.

Samples and production quantities of the SiC Schottky diodes are available now, with lead times of 18 weeks. To access the datasheets for the dual-diode and single-phase bridge devices, click here.

Vishay Intertechnology 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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PMIC extends primary battery operating time

EDN Network - Thu, 02/06/2025 - 21:22

Integrating an efficient boost regulator, the nPM2100 PMIC from Nordic Semiconductor prolongs the life of primary non-rechargeable batteries. Along with a range of energy-saving features, the device ensures that the full charge is used before the cell is discarded.

Powered by an input voltage range of 0.7 V to 3.4 V, the nPM2100’s boost regulator provides an output voltage from 1.8 V to 3.3 V, with a maximum current of 150 mA. It also drives a load switch/LDO, supplying up to 50 mA across an output range of 0.8 V to 3.0 V. The regulator features a quiescent current of 150 nA, with power conversion efficiency of up to 95% at 50 mA and 90.5% at 10 µA.

The nPM2100 manages the power supply for low-power SoCs and MCUs, including Nordic’s nRF52, nRF53, and nRF54 series of wireless multiprotocol devices. Configured via an I2C-compatible two-wire interface, it provides easy access to advanced functions such as ship mode and battery fuel gauging. Additionally, the PMIC furnishes two GPIOs that can be repurposed for time-critical control functions, offering an alternative to serial communication.

Ship mode supports a 35-nA sleep current with multiple wakeup options, including a break-to-wake function that allows a buttonless product to wake from ship mode when an electrical connection is broken. The voltage- and temperature-based fuel gauge runs on the host microprocessor, providing accurate battery level measurements and ensuring full access to the battery’s energy.

Samples of the nPM2100 are now available in a 1.9×1.9-mm WLCSP, with additional variants to be offered in 4×4-mm QFN packages. Volume production is expected in the first half of 2025.

nPM2100 product page

Nordic Semiconductor 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Partners simplify FPGA-based wireless development

EDN Network - Thu, 02/06/2025 - 21:21

Outfitted with an Altera Agilex 7 FPGA, Hitek’s eSOM7 embedded system-on-module pairs with ADI’s Apollo Mixed Signal Front End (MxFE) AD9084/AD9088 evaluation boards. This combined wideband development setup enables customers to seamlessly evaluate and develop high-performance Apollo MxFE-based wireless products in conjunction with Agilex 7 FPGAs.

The Hitek development platform includes two modules: the eSOM7, featuring two 400-pin high-speed mezzanine connectors, and a carrier board that breaks out the FPGA’s SERDES and I/Os. The eSOM7’s Agilex 7 F-tile FPGA integrates hard IP for networking up to 400G Ethernet and PCIe Gen 4. Adding soft IP such as JESD204C, a UDP/IP offload engine (UOE), and DIFI enables an optimized front-end processing and transport design.

For flexibility, designers can choose between two eSOM7 variants: the eSOM7-4F (four F-tiles), which supports all MxFE ADC/DAC channels, or the eSOM7-2F (two F-tiles), which supports half. The carrier module includes a VITA57.4 FMC+ connector with level translation and control logic to interface with ADI’s Apollo MxFE evaluation boards.

The high-performance platform eases the development of a wide range of applications, including radar, electronic warfare systems, phase array antennas, broadband and satellite communication systems, and electronic test and measurement systems.

The HiTek development platform with the eSOM7-2F is available now. The version featuring the eSOM7-4F will be available in Q1 2025. To learn more, click here.

Hitek Systems

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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ASIL-D MCUs and compiler enhance SDV safety

EDN Network - Thu, 02/06/2025 - 21:21

HighTec’s Rust compiler now supports ST’s Stellar automotive MCUs, accelerating safety-critical system development for software-defined vehicles (SDVs). Stellar 28-nm MCUs are certified to ISO 26262 ASIL D, the highest level of risk management, while the Rust compiler is qualified to the same safety level.

Rust’s safety, performance, and reliability make it an emerging choice for automotive mission-critical systems. It includes provisions to safeguard memory, process threads, and data types, with runtime efficiency comparable to C/C++ in execution time and memory usage. HighTec’s C/C++ and Rust compilers enable the integration of newly developed Rust code, with its inherent safety benefits, alongside legacy C/C++ code.

ST’s Stellar automotive MCUs feature Arm Cortex-R52+ cores and a safety-focused architecture. In addition to ISO 26262 ASIL D certification, they comply with ISO 21434 cybersecurity standards and UN155 requirements, ensuring alignment with the latest safety and security standards.

For more information about the HighTec ASIL D Rust compiler for ST’s Stellar 32-bit automotive MCUs, click here.

HighTec EDV-Systeme

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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