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GaN RF switch delivers 20 W

EDN Network - Thu, 01/16/2025 - 20:42

Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches commonly used in the RF front ends of tactical and military communication radios.

The TDSW84230EP tolerates up to 900 mA/mm of saturation current, leveraging GaN’s high breakdown voltage and carrier density. Encased in a compact 3×3×0.8-mm, 16-pin QFN package, it offers 0.2-dB insertion loss and 45-dB port isolation, providing enhanced efficiency and saving board space over PIN diode architectures.

Qualified for operation over the military temperature range of -55°C to +125°C, the TDSW84230EP requires a positive supply voltage of 2.6 V to 5.25 V. Its internal charge pump is disabled to eliminate charge pump spurs in low-noise applications, while a -18-V supply is needed on the VCP pin.

The TDSW84230EP GaN RF switch is available now in commercial versions from Teledyne HiRel and authorized distributors.

TDSW84230EP product page 

Teledyne HiRel Semiconductors 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Murata introduces ultra-small chip inductor

EDN Network - Thu, 01/16/2025 - 20:42

At this month’s CES 2025 show, Murata unveiled what is claimed to be the world’s smallest 006003-inch (0.16×0.08 mm) chip inductor. This development offers a 75% volume reduction compared to the previous smallest product, the 008004-inch (0.25×0.125 mm) inductor.

“Following our success in introducing the world’s smallest multilayer ceramic capacitor (MLCC) in September 2024, our engineering teams are now developing a pioneering 006003-inch size chip inductor to further meet market demands,” says Takaomi Toi, general manager of Inductor Product Development at Murata Manufacturing.

“With the creation of the world’s smallest class prototype, we’re confident that this product represents an exciting addition to Murata’s extensive portfolio of market-leading chip inductors. This development continues to demonstrate Murata’s commitment to innovation and also marks a significant milestone in our quest to support the miniaturization and enhanced functionality of future electronic devices,” Toi said.

For more information about this chip inductor development, please contact Murata here.

Murata Manufacturing

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EDA tool tackles 3D IC design challenges

EDN Network - Thu, 01/16/2025 - 20:42

GENIO EVO, an integrated chiplet/package EDA tool from MZ Technologies, addresses thermal and mechanical stress in the pre-layout stage of 3D IC design. Set to be demonstrated at this month’s Chiplet Summit, GENIO EVO is the second generation of MZ’s flagship GENIO cross-fabric platform for system design. Like its predecessor, GENIO EVO enables co-design of chiplets, dies, silicon interposers, packages, and surrounding PCBs to meet area, power, and performance targets.

GENIO EVO integrates seamlessly with existing commercial implementation platforms or custom EDA flows through plugins. Operating at the architectural level, it provides optimal system choices for 2.5D or 3D multi-die designs. A new user interface supports a cross-hierarchical, 3D-aware design methodology that streamlines the system design process. By integrating IC and advanced packaging design, it ensures full system-level optimization, shorter design cycles, faster time-to-manufacturing, and improved yields.

The platform identifies and analyzes thermal and mechanical failures. It supports architectural exploration and what-if analysis in the early design stages to improve implementation predictability. By planning and managing high-pin-count interconnects in complex multi-fabric designs, it anticipates and avoids downstream thermal and mechanical issues.

GENIO EVO is available for immediate licensing. For more information, click the link below.

MZ Technologies

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

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Guerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF

Semiconductor today - Thu, 01/16/2025 - 18:42
Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has formally released the GRF0020D and GRF0030D, the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company...

Add one resistor to allow DAC control of switching regulator output

EDN Network - Thu, 01/16/2025 - 18:04

Whether its buck, boost, or buck/boost, internal or external switch, milliamps or tens of amps, a literal cornucopia of programmable output switching regulator/converter chips are commercially available. While the required external Ls and Cs (of course) vary wildly from topology to topology and chip to chip, (almost) all use exactly the same basic two-resistor network for output voltage programming shown in Figure 1. Its example buck type regulator was picked more or less arbitrarily, so please ignore the L and Cs and just focus on R1, R2, and (later) R3.

Figure 1 The (almost) universal regulator output programming network where Vout = Vsense(R1/R2 + 1) = 0.8v*(11.5 + 1) = 10v.

Wow the engineering world with your unique design: Design Ideas Submission Guide

For reasons known only to gurus of the mystic and marvelous monolithic realm, the precision Vsense feedback node voltage varies from type to type over a roughly 3:1 range from 0.50v to 1.5v. Recommended values for R1 vary too. 

The point is the topology doesn’t vary. All (or at least most) conform faithfully to Figure 1. This surprising uniformity becomes very useful if your application requires DAC control of the output voltage. See Figure 2 for how this can be done with a positive polarity DAC and just one added resistor: R3.

Figure 2 Regulator output programming with a DAC and the KISS1 network where Vout = (Vc)*(R1/R2) = (2.5 to 0v) 4 = 0 to 10v.

Given reasonable choices for the DAC (e.g., 2.5v), numbers for R1 and Vsense from the regulator chip datasheet, and Vomax from your application requirements, here’s the KISS1 arithmetic:

  1. R2 = R1 Vcmax/Vomax
  2. R3 = R1/(Vomax/Vsense – R1/R2 – 1)

And, in the grand tradition of the KISS1 principle, that’s it. Ok, ok. Except maybe for a couple of (minor?) caveats. For example:

  1. Expression 2 above, and therefore the necessary value for R3, must shake out positive. I can’t think of a practical case where it wouldn’t, but there’s probably some perverse permutation of parameters out there where it won’t, and implementing negative resistors isn’t particularly simple.
  2. The relation between Vout and Vc is inverse. So, the digital version of Vc must be 1’s complemented (a totally KISS-bit of software arithmetic to flip all the bits, so 0s become 1s, and 1s become 0s) before being written to the DAC register.
  3. Vin must be adequate for the chosen chip to generate the chosen Vomax when Vc = 0. Duh.

So maybe it’s not really totally KISS1, just mostly.

1 Famous KISS principle: Is a footnote really necessary?

Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

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METLEN investing €295.5m in bauxite, alumina and gallium production in Greece

Semiconductor today - Thu, 01/16/2025 - 17:33
Multi-national industrial and energy company METLEN Energy & Metals of Athens, Greece – which operates the only vertically integrated bauxite, alumina and primary aluminium production unit in the European Union (EU) with privately owned port facilities – says that the Metallurgy Committee, in a joint session with the Capital Allocation Committee, has made the final investment decision (FID) to proceed with implementing a new €295.5m plan for the production of bauxite, alumina and gallium...

Vermont Gallium Nitride Tech Hub awarded $23.7m from US Economic Development Administration

Semiconductor today - Thu, 01/16/2025 - 16:06
The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including GlobalFoundries and the State of Vermont — has been awarded $23.7m in federal funding from the US Economic Development Administration (EDA)...

My first linear power supply! (and it sucks)

Reddit:Electronics - Thu, 01/16/2025 - 15:27
My first linear power supply! (and it sucks)

My first isolated power supply!!

It does 200mA fused, +-9V. The actual max current is a mystery due to the salvaged transformer (from a device that is at around 3 times as old as me), so I took a relatively conservative guess. t's fully linear, with less than 1mV PARD at full load (using a very janky test setup though).

I have a higher power (1.25-18V, 0-3A) power supply made of a buck regulator module with a laptop power supply, but it not isolated, and the ripple is horrible.

I only made this so that I could test parts of my next power supply, which will be a more legit, 0-20V, 0-2A lab power supply.

I'm going to box it up later, but for now it does work.

submitted by /u/Triq1
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