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• The industry’s first high-speed, single-chip lidar laser driver can detect objects faster and more accurately than discrete solutions.
• New high-performance automotive bulk acoustic wave (BAW)-based clocks are 100 times more reliable than quartz-based clocks, enabling safer operation.
• Automotive manufacturers can enhance front and corner radar sensor functions with TI’s newest millimeter-wave (mmWave) radar sensor.

Texas Instruments (TI) introduced a new portfolio of automotive lidar, clock and radar chips to help automakers transform vehicle safety by bringing more autonomous features to a wider range of cars. TI’s new LMH13000, the industry’s first integrated high-speed lidar laser driver, delivers ultra-fast rise time to improve real-time decision-making. The industry’s first automotive BAW-based clocks, the CDC6C-Q1 oscillator and LMK3H0102-Q1 and LMK3C0105-Q1 clock generators, improve advanced driver assistance system reliability. Addressing evolving ADAS needs, TI’s new AWR2944P mmWave radar sensor offers advanced front and corner radar capabilities.

“Our latest automotive analog and embedded processing products help automakers both meet current safety standards and accelerate toward a collision-free future,” said Andreas Schaefer, TI general manager, ADAS and Infotainment. “Semiconductor innovation delivers the reliability, precision, integration and affordability automakers need to increase vehicle autonomy across their entire fleet.”

Real-time decision-making with 30% longer distance measurements

A crucial technology for the future of safe autonomous vehicles, lidar provides a detailed 3D map of the driver’s surroundings. This enables vehicles to accurately detect and quickly react to obstacles, traffic and road conditions to improve real-time decision-making. TI’s new LMH13000 is the industry’s first integrated high-speed laser driver to deliver an ultra-fast 800ps rise time, achieving up to 30% longer distance measurements than discrete solutions. With integrated low-voltage differential signaling (LVDS), complementary metal-oxide semiconductor and transistor-transistor-logic control signals, the device eliminates the need for large capacitors or additional external circuitry. This integration also supports an average 30% reduction in system costs while reducing solution size by four times, empowering design engineers to discretely mount compact, affordable lidar modules in more areas and across more vehicle models

As lidar technology reaches higher output currents, vast variations in pulse duration over temperature make it challenging to meet eye safety standards. TI’s LMH13000 laser driver provides up to 5A of adjustable output current with only 2% variation across its -40C to 125C ambient temperature range, compared to discrete solutions that can have up to 30% variation. The device’s short pulse-width generation and current control enable the system to meet Class 1 U.S. Food and Drug Administration eye safety standards.

Design a reliable ADAS with the industry’s first automotive BAW-based clocks

Electronics in ADAS and in-vehicle infotainment systems must work reliably while facing temperature fluctuations, vibrations and electromagnetic interference. With TI’s BAW technology benefits, the new CDC6C-Q1 oscillator and LMK3H0102-Q1 and LMK3C0105-Q1 clock generators increase reliability by 100 times compared to traditional quartz-based clocks, with a failure-in-time rate of 0.3. Enhanced clocking precision and resilience in harsh conditions enable safer operation, cleaner data communication, and higher-speed data processing across next-generation vehicle subsystems.

Additionally, the company unveiled a new front and corner radar sensor, the AWR2944P, building on TI’s widely adopted AWR2944 platform. The new radar sensor’s enhancements improve vehicle safety by extending detection range, improving angular accuracy, and enabling more sophisticated processing algorithms. Key enhancements include:

• An improved signal-to-noise ratio.
• Increased computational capabilities.
• A larger memory capacity.
• An integrated radar hardware accelerator that allows the microcontroller and digital signal processor to execute machine learning for edge artificial intelligence applications.

TI’s new automotive lidar, clock and radar solutions build on the company’s commitment to helping engineers design adaptable ADAS for a safer, more automated driving experience.

The post TI enables automakers to advance vehicle autonomy and safety with new chips in its automotive portfolio appeared first on ELE Times.

On 22 April, Tokyo-based Mitsubishi Electric Corp will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances...

In an exclusive interaction with ELE Times, Jaya Singh, Director – MSP WW Development at Texas Instruments, delves into the breakthrough innovations behind the world’s smallest MCU. She highlights how TI’s advanced packaging technologies, global collaboration, and the pivotal role of the India R&D team enabled unprecedented miniaturization without compromising performance or efficiency. This conversation also explores TI’s strategic roadmap, real-world applications, and the future of ultra-low-power microcontrollers in next-gen electronics.

Jaya Singh, Director – MSP WW Development at Texas Instruments

ELE Times: What breakthrough technologies and design innovations enabled Texas Instruments to develop the world’s smallest MCU without compromising performance, power efficiency, or functionality?

Jaya Singh: Despite its tiny size, the world’s smallest MCU offers robust features, including 16KB of flash memory, a 12-bit ADC with three channels, three timers, and 6 GPIOs. With an Arm® Cortex®-M0+ CPU running at 24 MHz, it empowers engineers to create compact, power-efficient designs without compromising on performance.

Texas Instruments achieved this by leveraging advanced wafer chip-scale packaging (WCSP) technology in combination with feature optimization efforts. WCSP offers the smallest possible form factor by directly connecting an array of solder balls to the silicon die, eliminating the need for a larger package. This results in a package size virtually equal to that of the silicon itself.

By fitting eight solder balls into a compact 1.38 mm² footprint, TI enabled higher feature integration per square millimeter. This miniaturization was further complemented by a deep understanding of customer needs, allowing TI to deliver a highly optimized embedded solution that balances size, cost, and functionality.

ELE Times: What role did TI India R&D team play in this development? Can you highlight their key contributions, collaboration with the global team, and the specific engineering challenges they helped overcome?

Jaya Singh: The TI India R&D team was involved in the complete lifecycle of the product, playing an instrumental role in the end-to-end development of the world’s smallest MCU. The India team played a vital role in defining the product specifications and ensuring a highly cost-optimized and efficient solution.

The India team collaborated closely with global teams, which enabled the integration of deep technical expertise with real-world application insights. This partnership helped overcome key engineering challenges, such as achieving ultra-small packaging without sacrificing functionality or reliability.

In parallel, the India team focused on tailoring the MCU to address the specific needs of customers. This included optimizing features such as memory configuration, analog peripherals and power efficiency to align with the demands of embedded systems used in industrial, automotive and consumer electronics sectors, such as those in India.

By combining technical leadership with market localization, the TI India R&D team ensured that this innovation not only set a global benchmark but also delivered practical value across key applications.

ELE Times: Cost optimization is critical in semiconductor design. How did TI achieve the right balance between affordability, energy efficiency, and high performance in this ultra-miniature MCU?

Jaya Singh: Achieving the optimal balance between cost, efficiency and performance required close collaboration across TI’s global engineering, design and manufacturing teams. This cross-functional effort enabled a holistic approach to cost optimization, ensuring that every element of the product was purposefully engineered for value.

Key innovations in manufacturing technology, packaging and circuit design played a pivotal role in making the MCU both compact and powerful.

ELE Times: What are some real-world applications where this MCU will be a game-changer, particularly in industries like wearables, medical devices, and ultra-low-power IoT?

Jaya Singh: As electrical circuits and system designs become smaller, board space is increasingly considered a scarce and valuable resource. TI’s MSPM0C1104 WCSP MCU enables innovation in size-constrained applications such as personal electronics, medical wearables, and factory automation. Using an ultra-small, feature-rich MCU in high-density designs enables engineers to design solutions with more room for additional components and larger batteries for increased operational lifetimes.

ELE Times: How does this innovation fit into TI’s broader roadmap for ultra-low-power and miniaturized semiconductor solutions, and what can we expect next in this space?

Jaya Singh: Since the launch of our Arm® Cortex®-M0+ MCU portfolio in 2023, Texas Instruments has rapidly expanded its offering to over 100 devices for industrial, medical and automotive systems. The portfolio offers scalable configurations of on-chip analog peripherals and a range of computing options, including other small packages to help reduce board size and bill of materials. We support the portfolio with a comprehensive ecosystem of hardware and software resources, to help engineers reduce system cost and complexity while meeting diverse application needs. In the future, we plan to continue expanding the portfolio to meet the growing needs of the industry.

The introduction of the world’s smallest MCU demonstrates TI’s commitment to developing small packages across our embedded processing and analog portfolio that help our customers innovate in size-constrained applications. The trend of smaller, more compact design requirements will continue to grow. Packaging advancements enable engineers to integrate more functionality into smaller form factors while maintaining high levels of precision and performance, enhancing user experiences and creating new design possibilities.

TI’s investments in internal manufacturing and technology have given the company greater control of its entire manufacturing process, while also lowering costs. By optimizing packaging solutions for specific application needs, TI can explore new design approaches and technologies while achieving the highest levels of quality and reliability – driving innovation and meeting changing industry demands.

ELE Times: With semiconductor technology constantly evolving, what unique challenges and opportunities do you foresee in pushing the boundaries of MCU miniaturization further?

Jaya Singh: With each new generation of electronics, consumers expect continuous advancements in size and functionality. To meet these demands, engineers are challenged to add new features while maintaining or decreasing their products’ current form factors. TI is committed to helping our customers overcome their design challenges and get to market quickly with MCUs that are scalable, cost-optimized and easy-to use.

The post Pushing the Boundaries of Miniaturization with Texas Instruments’ New MCU appeared first on ELE Times.

As the electric vehicle (EV) revolution accelerates globally, Battery Management Systems (BMS) have emerged as the unsung heroes—quietly orchestrating the health, performance, and safety of advanced battery packs that power the next generation of mobility as well as energy storage solutions.

With the global shift toward high-voltage architectures, solid-state chemistries, and connected ecosystems, BMS technology is undergoing a profound transformation. Today’s systems are not just passive controllers—they are intelligent, predictive, cyber-resilient platforms enabling faster charging, longer life, and circular energy applications.

In this feature, ELE Times explores the frontiers of BMS development, with a focus on innovations in ultra-high-voltage support, real-time AI integration, cybersecurity, thermal breakthroughs, and global standardization. Industry leaders like Delta Electronics offer valuable insights into the technological shifts shaping this pivotal domain.

From Lithium-Ion to Solid-State and Sodium-Ion: The Chemistry-Agnostic Evolution of BMS

Next-gen battery chemistries like solid-state and sodium-ion promise higher energy densities, safer designs, and reduced reliance on scarce materials. However, their diverse electrochemical properties require adaptable and highly intelligent BMS platforms.

Delta Electronics, an industry leader in power and thermal solutions, is playing a key role in enabling this transition. Their latest BMS innovations are designed to be chemistry-agnostic, capable of managing not only conventional lithium-ion batteries but also emerging formats.

“Our advanced BMS platforms are optimized for ultra-high-voltage architectures—800V and beyond,” Rajesh Kaushal, Energy Infrastructure & Industrial Solutions (EIS) Business Group Head, India & SAARC, Delta Electronics, shared. “This is critical for enabling faster charging and higher drivetrain efficiency. We’re also leveraging adaptive control algorithms and AI-driven analytics to achieve precise thermal management, voltage control, and SOC estimation across various battery chemistries, including solid-state and sodium-ion.”

AI at the Edge: Unlocking Real-Time Diagnostics and Predictive Intelligence

BMS systems are becoming smart, self-optimizing, and responsive—thanks to AI and edge computing.

Delta’s integration of AI-driven algorithms and edge computing empowers its BMS to perform real-time cell-level diagnostics, dynamically optimize charging protocols, and conduct predictive analytics for early fault detection and lifecycle management. This evolution from reactive to predictive management allows early detection of anomalies, degradation trends, and potential failure points.

“By processing battery data at the edge, our BMS platforms reduce latency and improve responsiveness,” Delta noted. “This ensures superior energy distribution, thermal safety, and charging efficiency—even under dynamic operating conditions.”

The result is a system that adapts on the fly—extending battery life, maximizing range, and enhancing user safety.

Cybersecurity and Functional Safety in the Era of OTA and Vehicle Connectivity

As EVs become increasingly connected, over-the-air (OTA) updates and cloud integration introduce new vectors for cybersecurity risks. Securing the BMS, which has access to critical vehicle and battery functions, becomes a top priority.

Leading system developers are engineering their BMS architectures in compliance with ISO 21434 for automotive cybersecurity and ISO 26262 to meet stringent functional safety requirements. Robust hardware encryption, secure boot mechanisms, and real-time anomaly detection algorithms are now standard features in next-gen BMS platforms.

Delta is among the innovators focusing on this dual mandate of cybersecurity compliance and functional reliability, ensuring that their BMS solutions remain resilient against evolving threat landscapes.

Enabling Ultra-Fast Charging with Intelligent Thermal Management

With growing consumer demand for sub-10 minute fast charging, thermal stress becomes a critical bottleneck. Charging a large battery at high currents within minutes can induce rapid temperature rise, risking thermal runaway if not managed effectively.

Breakthroughs in active liquid cooling, phase-change materials, and smart heat sinks are being integrated directly into the BMS ecosystem. With AI-assisted thermal forecasting, the system can predict potential heat buildup and adjust the charging cycle in advance to prevent overheating.

Delta is investing in advanced cooling technologies that work in tandem with AI-driven thermal models. “Thermal runaway mitigation is not just about removing heat—it’s about knowing where and when to intervene,” Mr. Kaushal explained.

Balancing Act: Improving Efficiency Through Active Balancing and Real-Time Impedance Tracking

Traditional passive cell balancing wastes energy as heat, especially in large battery systems. New-generation BMS solutions are increasingly adopting active balancing to redistribute charge dynamically and efficiently across cells.

Coupled with real-time impedance tracking, these systems can detect early signs of cell aging or imbalance, allowing preemptive corrections to preserve performance and extend battery lifespan.

Delta’s BMS leverages both techniques, resulting in better thermal uniformity, extended range, and improved charging cycles over the battery’s lifetime.

Towards a Circular Economy: Interoperability and Second-Life Readiness

As the EV ecosystem expands beyond traditional use cases, modern BMS architectures are being reimagined to accommodate battery swapping, second-life deployment in stationary energy storage, and the broader goals of circular economy frameworks. This requires a high degree of interoperability, with standardized communication protocols and modular software layers.

Forward-looking companies are aligning with global standards like IEC 62984 and OpenBMS frameworks, ensuring that their systems can seamlessly integrate into a variety of energy use cases—from grid storage to micro-mobility.

Delta is actively pursuing interoperability across its BMS product lines, supporting modular deployment in vehicle and stationary storage contexts alike.

Conclusion: BMS as the Central Nervous System of Electrification

The future of mobility rests not just on battery cells but on the intelligence that governs them. As BMS platforms become more adaptive, predictive, and secure, they are evolving into the central nervous systems of modern EVs and energy storage systems.

With pioneering work by companies like Delta, the industry is on track to support higher voltages, faster charging, and longer battery life—while embracing sustainability and digital intelligence at every level.

At ELE Times, we will continue to track the cutting-edge of BMS and battery technology as the heartbeat of the global energy transition.

The post Redefining Battery Intelligence: The Future of BMS in an 800V, AI-Driven EV Era appeared first on ELE Times.

Introduction: Audio Systems in the Age of Efficiency

As embedded consumer electronics evolve toward greater functionality and miniaturization, audio systems are challenged to deliver high performance while consuming less board space, less power, and generating minimal EMI. Whether it’s a Bluetooth speaker on a picnic table, a surveillance system mounted on an exterior wall, or a handheld gaming device running on a lithium-ion cell, the expectations for clear, powerful audio in compact, thermally constrained systems have never been higher.

Enter the NAU82110YG, a mono, analog-input, high-efficiency Class-D audio amplifier developed to meet the rigorous design needs of modern consumer and IoT electronics. With its 18W output capability, filter-free topology, and low-noise performance, this amplifier is optimized not only for output power, but for system-level design integration, EMI mitigation, and power-aware operation.

Class-D Amplification: Efficiency by Design

At the heart of the NAU82110YG is its Class-D amplifier topology—a PWM-based design that uses high-frequency switching (pulse-width modulation) to amplify audio signals. Unlike linear Class-AB amplifiers that operate transistors in the active region (and dissipate significant power as heat), Class-D amplifiers operate power MOSFETs in either saturation or cutoff, minimizing conduction losses.

This fundamental architecture results in power efficiency improvements of up to 66% over Class-AB designs, with typical system efficiencies exceeding 90% under moderate-to-high load conditions. The reduced thermal footprint of Class-D architectures allows for:

• Smaller heat sinks or passive cooling

• Longer battery life in portable systems

• Higher output power in thermally constrained designs
  

The NAU82110YG implements this efficiency to full effect, delivering:

• Up to 18W output into 4 Ω at 12V

• Up to 10W output into 8 Ω

• <6 mA quiescent current @ 12V supply
  

This makes it an excellent candidate for always-on or battery-powered applications that cannot afford high idle currents or thermal load.

Filter-Free Output: EMI Innovation at the Edge

Conventional Class-D amplifiers require low-pass LC filters at the output stage to smooth switching artifacts and limit electromagnetic interference (EMI). However, these components increase system cost, consume PCB space, and complicate layout—particularly in tightly integrated wireless products.

The NAU82110YG breaks this dependency through a filterless Class-D output powered by two key innovations:

• Spread-Spectrum Oscillator: Dynamically modulates the PWM switching frequency, spreading EMI energy across a broader spectral band to avoid regulatory test points (e.g., FCC/CE Class B).

• Slew-Rate Control: Softens the transitions at the output stage to reduce high-frequency harmonic energy, thereby suppressing radiated and conducted EMI.
  

The result is compliant EMI performance with no external filtering components required—an enormous benefit in space- and cost-constrained designs such as smart home nodes and compact audio devices.

High SNR and PSRR: Precision Meets Power

While output power and efficiency are critical, audio signal integrity is paramount. The NAU82110YG is engineered to maintain high-fidelity signal reproduction even in noisy electrical environments. It achieves this through:

• Signal-to-Noise Ratio (SNR): 103 dB — ensuring clean output with minimal background hiss or digital noise coupling

• Power Supply Rejection Ratio (PSRR): >83 dB @ 217 Hz — isolating audio performance from ripple and transients common in switched-mode power supplies (SMPS) or wireless SoCs
  

This makes the NAU82110YG particularly well-suited for:

• Wireless audio products, where RF-induced noise and digital switching transients can corrupt audio paths

• Devices powered by buck converters or USB power, where 5V/12V supplies are inherently noisy
  

Input Flexibility and Gain Control

One of the standout features of the NAU82110YG is its dual-mode input architecture:

• Single-ended input for simpler source configurations or legacy audio chains

• Differential input for improved common-mode noise rejection—ideal in environments with significant ground bounce or shared power rails
  

In addition, the amplifier provides programmable gain control via:

• I²C control: Up to 32 discrete gain levels, allowing firmware-based dynamic range adjustment or real-time volume control

• Pin-selectable preset gains: Five options (0 / 20 / 24 / 32 / 36 dB), allowing low-latency analog selection for fixed-function systems or GPIO-driven gain staging
  

This flexibility enables the same amplifier to support diverse product families, audio input standards, and user interface styles.

Protection and Reliability: Built-In Intelligence

For designers targeting industrial, outdoor, or high-volume consumer applications, system-level protection is non-negotiable. The NAU82110YG incorporates a comprehensive suite of protections to safeguard both the amplifier and downstream components:

Protection Type	Description
Overcurrent Protection (OCP)	Prevents device damage under speaker short or overdrive conditions
Overvoltage Protection (OVP)	Shields the amplifier against input transients or power rail fluctuations
Undervoltage Lockout (UVLO)	Prevents operation below safe VDD levels
Overtemperature Protection (OTP)	Shuts down the amplifier if die temperature has exceeded thermal limits
Anti-Clipping Protection (ACP)	Reduces the likelihood of speaker damage due to waveform distortion under dynamic loads

 

Combined, these features simplify system qualification under thermal, electrical, and fault conditions, accelerating product certification (e.g., CE, UL, IEC-60065) and reducing RMA rates.

Performance Summary: NAU82110YG Key Specifications

Parameter	Value
Output Power	18W @ 4 Ω, 10W @ 8 Ω
Quiescent Current	<6 mA @ 12V
SNR	103 dB
PSRR	>83 dB @ 217 Hz
Gain Control	32-step I²C or 5 preset analog pins
Input Mode	Single-ended / Differential
Package	QFN20
Temp Range	-40°C to +105°C
EMI Control	Spread-Spectrum + Slew-Rate
Output Filter	Not required

 

Applications and Integration Scenarios

The NAU82110YG is optimized for a wide array of real-world applications:

• Bluetooth Speakers: Efficient amplification, dynamic gain, filter-free EMI compliance for compact designs

• Wireless Doorbells & Intercoms: Low idle current, fast startup (<5 ms), speaker protection for long-term use

• Outdoor Surveillance: Wide operating temperature, PSRR for SMPS isolation, differential input for long cable runs

• Handheld Game Consoles: Audio clarity with minimal power draw, quick response to sleep/resume cycles

Conclusion: A Platform-Level Audio Amplifier

The NAU82110YG represents a significant evolution in Class-D amplifier design, not just in raw performance, but in system-oriented integration. It addresses long-standing challenges—EMI compliance, board space constraints, thermal management, and dynamic audio control—through a highly integrated, filter-free, and protection-rich solution.

For engineers designing tomorrow’s connected devices, the NAU82110YG offers more than amplification: it provides an audio subsystem foundation that is efficient, flexible, and reliable by design.

For datasheets, application notes, and reference designs, visit:
https://www.nuvoton.com/products/smart-home-audio/audio-amplifiers/class-d-series/nau82110yg/

The post Engineering the Future of Compact Audio: A Deep Dive into the NAU82110YG Filter-Free Class-D Amplifier appeared first on ELE Times.

With the measurement of heart rate in wearable devices continuing to be refined for even greater precision, ams OSRAM AG of Premstaetten, Austria and Munich, Germany has introduced a new miniaturized Chip LED featuring a powerful 500µm chip that delivers enhanced signal quality. Despite measuring just 1.2mm x 1.0mm x 0.6mm, the ultra-compact LED still delivers light output of 14mW...

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has appointed Richard L. Clemmer and Christopher R. Koopmans as new independent members of its board of directors...

POET Technologies Inc of Toronto, Ontario, Canada — designer and developer of the POET Optical Interposer, photonic integrated circuits (PICs) and light sources for the hyperscale data-center, telecom and artificial intelligence (AI) markets — has announced significant new customer engagement in response to live demonstrations of the Teralight line of 1.6T transmit and receive optical engines at the 2025 Optical Fiber Communications (OFC) Conference in San Francisco, CA, USA (1–3 April)...

NAU82110YG – The New High-E Audio Device Ideal for Bluetooth Speakers, Wireless Doorbells, Outdoor Surveillance Systems, and Handheld Game Consoles

Nuvoton announced the NAU82110YG, a new Class-D audio amplifier. The NAU82110YG Class-D amplifier features high-efficiency mono, analog input, and delivers up to 10W (8 Ω load) or 18W (4 Ω load) output power. With multiple gain adjustment options, it is the ideal choice for consumer electronics applications such as Bluetooth speakers, wireless doorbells, outdoor surveillance systems, and handheld gaming consoles.

As the importance of quality of life grows, music plays an increasingly vital role in daily lives, driving strong demands for superior sound. Consumers now seek high-quality audio and advanced products, making power efficiency and noise reduction crucial in the electronics market. To address these needs, Nuvoton has introduced the NAU82110YG, a next-generation Class-D amplifier. This innovative product offers lower power consumption, reduced noise, and a range of features designed to enhance user experience.

The NAU82110YG mono Class-D audio amplifier features low quiescent current (6 mA @ 12V), high output power, and comprehensive device protection, suitable for various consumer audio applications. Additionally, this new amplifier supports both single-ended and differential input signal modes, providing flexibility for audio setup.

NAU82110YG Key Features

1. Multiple Gain Settings:

• Configurable via I2C interface with 32 gain levels
• Selectable via control pins with five preset gains: 0 dB / 20 dB / 24 dB / 32 dB / 36 dB

2. Comprehensive Device Protection:

• Overcurrent Protection (OCP)
• Overvoltage Protection (OVP)
• Undervoltage Lockout (UVLO)
• Overtemperature Protection (OTP)

3. Speaker Protection: Anti-Clipping Protection (ACP)
4. Package: QFN20
5. Operating Temperature Range: -40°C ~ 105°C

Superior EMI Performance, Filter-Free
The NAU82110YG amplifier stands out by eliminating the need for an external output filter, thanks to its spread-spectrum-oscillator technology and slew-rate control, effectively reducing electromagnetic interference (EMI). Moreover, it offers enhanced immunity and power supply rejection ratio (PSRR) of > 83 dB at 217 Hz. With an exceptional signal-to-noise ratio (SNR) of 103 dB, the NAU82110YG is an excellent fit for Class-D audio amplifiers in wireless and AM () frequency band applications.

Leap Forward in Efficiency and Power
The Class-D topology represents a significant leap forward in both power efficiency and noise minimization in audio devices. By generating a binary square wave, Class-D amplifiers efficiently amplify the signal through power device switching. Compared to Class-AB devices, Class-D amplifiers offer power efficiencies that are two-thirds better.

The NAU82110YG Class-D audio amplifier excels in driving a 4 Ω load with an impressive output power of up to 18W and features a chip-enable pin for a fast start-up time of just 4.6 ms.

NAU82110YG Target Applications

The new Class-D audio amplifier is designed for consumer electronics applications including Bluetooth speakers, wireless doorbells, outdoor surveillance systems, and handheld gaming consoles.

The post Nuvoton Introduces Excellent SNR, Filter-Free 18W Class-D Audio Amplifier appeared first on ELE Times.

For my home theater controller i use an existing obsolete hmb2260 settop box and keep the 4digit display as its integrated in the casing. so an arduino nano can display info on it. The ltc display is common anode and its multiplexed. I used an mcp23017, register b outputs are connected to each segment (7seg +dp), via uln2803 darlington transistor ic. The anode of each digit is switched by a 2n3904 as this transistor can switch the required current (8x25ma=200mA max). This transistor is switched via 1k resistor by register A of the mcp. So via i2c, only 1 digit is powered at the time resulting in the current flow from 5v supply, via 2n3904, via led segment(s), via 180 ohm resistor, via uln2803 darlington, to ground. I could by software in the arduino switch each digit in a row every 20ms without seeing a flicker. So it works quite well. submitted by /u/Mcuatmel [link] [comments]

Here's something I hooked up at the weekend - it's a prototype for an NFC card reader door entry system, with buzzer and doorbell I/O + lock strike plate activator. The ESP32 is running Tasmota and the board speaks to Node-RED via MQTT over wifi. submitted by /u/Linker3000 [link] [comments]

submitted by /u/Linker3000 [link] [comments]

Industrial gas company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan (part of Nippon Sanso Holdings Group) says that Lund University in Sweden is to purchase and use a TNSC FR2000-OX metal-organic chemical vapor deposition (MOCVD) reactor for its gallium oxide R&D...

Infineon Technologies AG of Munich, Germany has launched what it says are the first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, further increasing overall system efficiency. Additionally, the integrated solution simplifies the power-stage design and reduces bill-of-materials (BOM) cost...

Astable multivibrator LED ckt submitted by /u/xyz__99 [link] [comments]

Using a arcadyan hmb2260, just keeping the case and the connectors ,ir sensor and display. Grinding off all smd components of the original multilayer board. Keeping the scart,ca display,and other connectors. Adding arduino nano. Building display controller with mcp 23017. Implementing i2c bus between nano and mcp. Next a second nano will be added, as i2c slave to control hdmi cec bus. Aim is to control the home theater by sending cec commands, controlling line audio and speaker relays. submitted by /u/Mcuatmel [link] [comments]

Editor’s Note:

In this DI, high school student Tommy Liu modifies a popular low-cost DIY oscilloscope to enhance its input noise rejection and ADC noise with anti-aliasing filtering and IIR filtering.

Part 1 introduces the oscilloscope design and simulation.

This part (Part 2) shows the experimental results of this oscilloscope.

Experimental Results

Three experiments were conducted to evaluate the performance of our precision-enhanced oscilloscope using both analog and digital signal processing techniques.

First, we test the effect of the new anti-aliasing filter described in Part 1. For this purpose, a 2-kHz sinusoidal signal is amplitude modulated (AM) with a 961-kHz sinusoidal waveform by a Rigol DG1022Z signal generator (Rigol Technologies, Inc., 2016) and is used as the analog input to the oscilloscope.

In this scenario, the low-frequency (2 kHz) sinusoidal waveform is our signal, while the high-frequency tones caused by modulation with 961 kHz sinusoidal represent high frequency noises at the signal source. In the experiment, a 10% modulation depth is used to make the high frequency noise easily identifiable by sight. The time division is set at 20 µs with the ADC sampling frequency of 500 KSPS.

Wow the engineering world with your unique design: Design Ideas Submission Guide

Results of anti-aliasing filter

The original DSO138-mini lacks anti-aliasing filter capability due to its insufficient -3-dB cut-off frequencies (around 500 kHz to 800 kHz). As a result, the high-frequency noise tones caused by modulations pass through the analog front-end, without much attenuation, and are sampled by the ADC at 500 KSPS. This creates aliasing noise tones at the ADC output and can be clearly seen in the displayed waveform on the DSO128-mini (Figure 1).

Figure 1 The aliasing noise tones at the ADC output on the DSO138-mini.

Our new anti-aliasing filter provides a significant lower -3-dB cut-off frequency of around 100 kHz, and effectively filters away most of the out-of-band high frequency noises, in this case, the noise tones caused by the signal modulation with 961 kHz sinusoidal. Figure 2 is a screenshot with the new anti-aliasing filter, indicating a significant reduction in the aliasing noise.

Figure 2 Reduction of the aliasing noise with the new anti-aliasing filter.

Detailed analysis on the captured data with the new anti-aliasing filter indicates a 10 dB to 15 dB (3.2x to 5.6x) improvement over the original DSO138-mini on noise rejection at frequencies higher than the oscilloscope’s signal bandwidth.

In practical applications, high frequency noises with a magnitude of a few millivolts RMS are not uncommon. A 5-mV RMS noise at near 900 kHz is attenuated to 0.73 mV (RMS) with our new anti-aliasing filter versus 2.48 mV (RMS) with the original DSO138-mini. With an ADC full-scale input range of 3.3 V, 0.73 mV RMS is of an effective resolution well above 10 bits (ENOB). With the original DSO138-mini, the ENOB would be at only an 8-bit level.

Results of digital post-processing filter

The second test evaluates the performance of the digital post-processing filter. As explained in Part 1, besides the noises at the analog input, other noise sources in oscilloscopes, such as noises on ADC inside the MCU damage the measurement precision. This is evident in Figure 3, which is a screenshot of the DSO138-mini with its Self-Test mode turned on. In Self-Test mode, an internally generated pulse signal—less susceptible to the noises from the external signal source—is used to test and fine tune the oscilloscope. We can see that there are still ripple noises on the pulse waveform.

Figure 3 Ripples on internally generated pulse signal during self-test mode on the DSO138-mini.

It is not easy to identify the magnitude of these ripples due to the limited pixel resolution of the DSO138-mini’s LCD display (320 x 240). We transferred the captured data to a PC via DSO138-mini’s UART-USB link for precise data analysis. Figure 4 shows the waveform of the captured self-test pulses on a PC. The ripple noises are calculated and shown in Figure 5.

Figure 4 Captured self-test pulse signal waveform on PC for more precision data analysis. 

Figure 5 Magnitude of noises on self-test pulse with no digital post-processing.

Considering the voltage division setting (1 V, -20 dB on Input) and attenuation setting (x1), the ripple on the self-test pulse has a peak-peak magnitude of 8 mV. This error is about 10 LSB and the calculated RMS value is about 3 mV, yielding an effective resolution of 8.3 bits. Digital post-processing can be used to suppress some of these noises. 

Figure 6 is the waveform after first-order infinite impulse response (IIR) digital filtering (α = 0.25) is performed on the PC, and Figure 7 shows the noises on the self-test pulse.

After IIR filtering, the noise RMS value reduces to about 0.75 mV, or by a factor of 4. This brings back the effective resolution from 8.3 bits to 10.4 bits. We notice that the rise and fall transition edges of the pulse look a bit less sharp than the signal before post-processing.

This is due to the low-pass nature of the IIR filter. With α=0.25, the passband (-3 dB) is at around 23 kHz, covering an input bandwidth up to audio frequencies (20 kHz). For tracking faster signals, such as fast transition edges of a pulse signal, we can relax α to a higher value allowing for more input bandwidth. 

Figure 6 Self-test pulse with first-order IIR digital filter where α = 0.25.

Figure 7 Noises on self-test pulse with first-order IIR filter where RMS noise reduces to ~0.75 mV.

The effects of both filters

Finally, we test the overall effect of both the new anti-aliasing filter and the digital post processing by inputting a sinusoidal input of 2 kHz from a signal generator to our new oscilloscope. We can see from Figure 8 that even with the new anti-aliasing filter, there are still some noises on the waveform, due to the ADC noises inside the MCU. The RMS value of the noises is about 2.8 mV and the effective resolution is limited to below 9 bits.

Figure 8 Noises on a 2 kHz sinusoidal input waveform despite having the new anti-aliasing filter.

As shown in Figure 9, with the first-order IIR filter in effect, the waveform cleans up. The RMS noise reduces to 0.7 mV and, again, this brings up the effective resolution from below 9 bits to above 10 bits. Other input frequencies, up to 20 kHz (audio), have also been tested and an overall effective resolution of 10 bits or more was observed with the new anti-aliasing filter and the digital post-processing algorithm.

Figure 9 A 2 kHz sinusoidal input waveform after digital post-processing where the RMS noise reduces to 0.7 mV.

Low-cost oscilloscope

Many traditional low-cost DIY type digital oscilloscopes have two major technical drawbacks, namely inadequate anti-aliasing capability and large ADC noises. As a result, these oscilloscopes can only reach an effective resolution of 8 bits or less, even though most of them are based on an MCU, equipped with built-in 12-bit ADCs.

These problems limit DIY oscilloscopes from more demanding professional high school projects. To address these issues, a well-designed first-order analog low-pass filter at the analog front-end of the oscilloscope, plus a programmable first-order IIR digital post-processing filter, are implemented on a popular low-cost DIY platform (DSO138-mini).

Experimental results verified that the new oscilloscope could maintain an overall effective resolution of 10 bits or above with the presence of high frequency noises at its analog input, up to an input bandwidth of 20 kHz and real-time sampling of 1 MSPS. The implementations are inexpensive—the BOM cost of the new anti-aliasing filter is just the cost of a ceramic capacitor (far less than a dollar), and the digital post-processing program is completely implemented in the PC software.

Costing less than fifty dollars, this precision digital oscilloscope can be used in many high schools. This includes high schools without the funds for pricey commercial models and, thus, enable students to perform a wide range of tasks: from the first-time electrical signal capture and observation to the more demanding precision measurement and signal analysis for complex electrical and electronic projects.

Tommy Liu is currently a junior at Monta Vista High School (MVHS) with a passion for electronics. A dedicated hobbyist since middle school, Tommy has designed and built various projects ranging from FM radios to simple oscilloscopes and signal generators for school use. He aims to pursue Electrical Engineering in college and aspires to become a professional engineer, continuing his exploration in the field of electronics.

Related Content

• Building a low-cost, precision digital oscilloscope—Part 1
• Build your own oscilloscope probes for power measurements (part 1)
• Build your own oscilloscope probes for power measurements (part 2)
• Basic oscilloscope operation
• FFTs and oscilloscopes: A practical guide

The post Building a low-cost, precision digital oscilloscope – Part 2 appeared first on EDN.

Infineon Technologies AG has introduced the world’s first gallium nitride power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the power stage design and reduces BOM cost.

In hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage of GaN devices. This gets worse with long controller dead-times, resulting in lower efficiency than targeted. Until now, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times via their controllers. All of which is extra effort, time and cost. The new CoolGaN Transistor G5 from Infineon significantly reduces these challenges by offering a GaN transistor with an integrated Schottky diode appropriate for use in server and telecom IBCs, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power PSUs, and motor drives.

“As gallium nitride technology becomes increasingly widespread in power designs, Infineon recognizes the need for continuous improvement and enhancement to meet the evolving demands of customers”, says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line, “The CoolGaN Transistor G5 with Schottky diode exemplifies Infineon’s dedication to an accelerated innovation-to-customer approach to further push the boundaries of what is possible with wide-bandgap semiconductor materials.“

GaN transistor reverse conduction voltage (VRC) is dependent on the threshold voltage (VTH) and the OFF-state gate bias (VGS) due to the lack of body diode. Moreover, the VTH of a GaN transistor is typically higher than the turn-on voltage of a silicon diode leading to a disadvantage during the reverse conduction operation, also known as third quadrant. Hence, with this new CoolGaN Transistor, reverse conduction losses are lower, compatibility with a wider range of high-side gate drivers, and with deadtime relaxed, there is broader controller compatibility resulting in simpler design.

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package.

The post Infineon launches world’s first industrial gallium nitride (GaN) transistor product family with integrated Schottky diode appeared first on ELE Times.

For fiscal third quarter 2025 (to end-February 2025), semiconductor production test and reliability qualification equipment supplier Aehr Test Systems of Fremont, CA, USA has reported revenue of $18.3m, up 35.6% on $13.5m last quarter and more than doubling from $7.6m a year ago...