ELE Times

• Aumovio combines tradition and a strong market position in the automotive industry with the ambition to shape the mobility of the future
• With the announcement of the new name at Auto Shanghai 2025, Automotive underlines the importance of the growth market of China and its “in the market for the market” approach
• Philipp von Hirschheydt, Member of the Executive Board of Continental and CEO Automotive: “We have consistently aligned automotive with future technologies and are picking up on market developments quickly, innovatively and from a strong competitive position. This means that we are consistently on our way to becoming an adaptive automotive powerhouse. Our future brand also reflects this ambition”

Continental group sector Automotive presented its future name at Auto Shanghai. The independent automotive company will be named Aumovio. The name of the new company combines the strong market position, heritage and technological expertise in the automotive industry with the ambition to shape the mobility of the future with innovations. Aumovio will offer electronic products and advanced mobility solutions for the software-defined vehicle and safe, exciting, connected and autonomous mobility to a wide range of global customers. According to a market analysis by Berylls, Automotive expects the value of solutions per vehicle in these segments to grow by an average of 4.7 percent annually until 2029 – and more dynamically than the number of passenger cars and light commercial vehicles produced worldwide (based on market forecast by S&P Global Mobility). At the Auto Shanghai this year, the group sector also presented its “in the market for the market” approach and several innovative technologies for Chinese customers and the Chinese market. Following the expected approval at the Continental Annual Shareholders’ Meeting on April 25, 2025, Aumovio is scheduled to list on the Frankfurt Stock Exchange in September 2025.

“As an independent company, we gain significantly more creative power and speed. Aumovio will be characterized by a triad of technologically leading products, a consistent value creation strategy and a global synergetic network, combined with a strong local presence for our customers. Our aim is to further expand our position in the future fields and growth markets of mobility. This strategy is particularly evident in China. Among other things, we are relying on our strong local presence by producing and developing locally for the Chinese market,” says Philipp von Hirschheydt, Member of the Executive Board of Continental and CEO of Automotive.

Continental’s group sector Automotive has been present in China for 30 years and employs around 10,000 people there. In the 2024 financial year, Automotive generated around 14 percent of its global sales in China. At Auto Shanghai, Automotive presented the Luna and Astra driver assistance systems, among others. Both were developed in the joint venture Horizon Continental Technology, for the Chinese market. Luna is an assistance system and supports active safety as well as basic driving and parking functions to increase safety and comfort. Astra is an advanced assistance system and enables, among other things, assisted driving without a high-resolution map and parking assistance with memory function.

Modern mobility solutions from Automotive

The future Aumovio offers highly developed electronic products and modern mobility solutions. In addition to its strong market position with innovative sensor solutions, displays, and technologically leading braking and comfort systems, Aumovio has significant expertise in software, architecture platforms and assistance systems for the rapidly growing future market of software-defined and autonomous vehicles. The Automotive group sector employs around 92,000 people and generated sales of around 19.4 billion Euros in the 2024 financial year.

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New radar sensor with Bosch’s own computing chip (SoC) and flexible ADAS solution packages

• The Bosch ADAS product family is a flexible modular system for driver assistance. Bosch is to equip the first passenger cars in China from mid-2025.
• Bosch is the first Tier 1 supplier to present a new radar sensor with a complete in-house design and its own system-on-chip (SoC).
• The future portfolio for driver assistance and automated driving is rounded off by a next-generation multi-purpose camera and inertial sensor unit.

Bosch is presenting its extensive portfolio of solutions for assisted and automated driving and parking. It includes software features and hardware components that the technology group is aligning with the expectations of local drivers and can be easily customized for different customer needs. With its radar sensor, Bosch is the first Tier 1 supplier worldwide to break new ground and develop and manufacture the entire product in-house. The special feature: The sensor has a computing chip specially developed by Bosch–known as an SoC–which combines high computing power with the smallest possible footprint. The radar sensor fits into Bosch’s newly designed modular system for assisted and automated driving: The Bosch ADAS product family (Advanced Driver Assistance Systems) offers a kind of ecosystem of software, sensors and services as well as the appropriate high-performance computers. Customers can make use of this and flexibly utilize the comprehensive solutions for various markets and vehicle segment – from low-cost small cars to high-performance premium models. The goal: Bosch wants to enable manufacturers worldwide to bring driver assistance functions to the mass market more easily, quickly, and cost-effectively. A new generation of the multi-purpose camera and the inertial sensor unit for the precise localization of assisted and automated vehicles complement the sensor portfolio.

“With our new Bosch ADAS product family, we are offering cost-efficient solutions for assisted and automated driving to the usual high standards of quality and safety. We have the right software and hardware for driver assistance functions, from small cars to mid segment and premium vehicles. This enables car manufacturers to integrate functions quickly and easily into their vehicles and bring them to market very fast.”

Christoph Hartung, President of the Cross-Domain Computing Solutions division at Robert Bosch GmbH.

“With our new Bosch ADAS product family, we are offering cost-efficient solutions for assisted and automated driving to the usual high standards of quality and safety. We have the right software and hardware for driver assistance functions, from small cars to mid segment and premium vehicles. This enables car manufacturers to integrate functions quickly and easily into their vehicles and bring them to market very fast,” says Christoph Hartung, President of the Cross-Domain Computing Solutions division at Robert Bosch GmbH

New Bosch ADAS product family in three equipment variants

Advanced driver assistance systems help to increase safety and comfort on the road. For example, by providing the driver with targeted support during monotonous and tiring driving tasks. Bosch has many years of experience with driver assistance systems, their development and integration into the vehicle. A deep understanding of each vehicle area is required for optimum implementation. With this expertise, Bosch is repositioning the ADAS product family. It enables assisted driving and parking up to SAE level 2, thus meeting the prevailing demand on the market. Bosch offers the ADAS product family in three variants: for the entry segment, the mid segment and the high segment. The variants differ depending on the scope of the software, the number and combination of sensors, and the required computing power. Seamless harmonization of these individual components facilitates system integration. Bosch gives car manufacturers swift and uncomplicated access to driver assistance systems, enabling them to significantly accelerate the development time of their vehicles. Bosch brings its hardware and software components to the market both as a complete systemic solution and separately from each other, as is the case in modern vehicle development. This provides further scope, as individual components of the three variants can be exchanged and flexibly combined as required. Accordingly, manufacturers have further freedom to integrate the driver assistance systems into their cars on a brand-specific basis. Artificial intelligence can be found throughout the Bosch ADAS product family. Bosch uses it, for example, for perception and driving planning. Thanks to AI, the vehicle thinks ahead, pays attention to what other road users might be doing, and calculates the next steps to safely reach the destination.

The entry segment version already incorporates key safety and comfort functions into the vehicle. The car uses this to regulate its speed and distance from the vehicle in front depending on the situation and keeps in lane when lane markings are clearly visible. This variant can be implemented as a purely camera solution with the new multi-purpose camera from Bosch, but can also be supplemented with up to five radar sensors depending on the safety requirements (of a country). The variant for the mid segment unlocks even more extensive functions. For example, an extended lane keeping assist that can also cope with lane markings that are not visible in places. In this variant, Bosch combines its camera heads for perception with additional sensors. The computing power no longer takes place in the camera itself, but in a more powerful central vehicle computer, as is becoming standard in software cars. Thanks to Bosch, the vehicle masters more complex traffic scenarios, which further increases driving comfort and safety on freeways and in heavy traffic. The system also pays attention and supports the driver. Bosch is already introducing hands-free driving on the freeway in this variant, provided the legal framework in the respective country permits it. This means that the driver can take their hands off the steering wheel at times, but still remains responsible. The variant for the high segment represents the pinnacle of Bosch driving assistance. It uses a 360-degree video belt and impresses with even greater computing power, so that the vehicle can handle urban junctions with ease and safely enter and exit roundabouts. Hands-free driving is extended to urban traffic in this version, provided that the legal requirements in the markets allow it. Bosch takes into account the various regulatory requirements and safety assessments

Bosch ADAS product family goes into serial production in mid-2025

The equipment variant for the mid-range segment will go into serial production with a Chinese manufacturer in the middle of this year. Users of this system will benefit from an assistance system linked to the navigation system, which is particularly popular among Chinese customers. The vehicle then independently carries out driving maneuvers along the route entered, such as changing lanes on freeways. The driver remains responsible and must be ready to intervene at any time. This function makes driving in the heavy traffic of Chinese cities more convenient and safer. Bosch has also already secured its first orders for the high segment version, with serial production expected to start in summer 2025. Bosch has already acquired half a dozen new customers for the ADAS product family for mid- and high segment in China, including BAIC, Dongfeng and Jetour. Bosch is thus continuously strengthening its leading position in the global ADAS market.

New radar sensor with Bosch SoC

Radar sensors are key components of driver assistance systems and modern vehicles would be inconceivable without them. For the new generation of its radar sensor, Bosch has developed and manufactured all core elements in-house, including the computing chip (SoC). The new Bosch radar sensor uses “RF CMOS technology,” which enables the efficient integration of high-frequency and digital circuits on a single chip. The structure size of the transistors of only 22 nanometers makes the chip particularly powerful and efficient despite its small footprint. Bosch is the first Tier 1 supplier on the market to introduce this technology in serial production.

New generation of the multi purpose camera

With the increasing market penetration of more extensive driver assistance functions in the lower price segments, high-performance yet affordable camera solutions are steadily gaining in importance. The new multi purpose camera from Bosch enables assisted driving and parking functions (up to SAE level 2) from the entry segment. Serial production is scheduled to start in 2026, initially in the Chinese market. Bosch’s own optical image processing module in the new camera generation ensures optimum sharpness and precision over the entire product service life, even in highly fluctuating temperatures. The camera is particularly durable, with consistently stable functional performance.

With its 8 megapixel image sensor, a horizontal field of vision of 120 degrees, and a detection range of up to 300 meters, the camera enables safety and convenience functions for assisted driving. These include adaptive cruise control and distance control, emergency braking within your own lane, lane keeping in urban areas, and detection and stopping at red lights

The new multi purpose camera is the central interface for the fusion of various sensor data. This means that the camera combines the data from its own image sensor and additionally from up to five radars and other sensors such as driver monitoring cameras or interior sensors. This integrated approach enables OEMs to reliably comply with mandatory ADAS regulations (e.g. General Safety Regulation), improve driving safety, and support the driver on the freeway (e.g. with assisted lane changes).

Safe localization in all driving situations

For assisted and automated driving, it is essential that vehicles can locate themselves precisely and safely at all times. Even in difficult visibility conditions and in the absence of lane markings or if the signal from the global navigation satellite system (GNSS) fails – for example, when driving through a tunnel – it is essential that the vehicle’s location can be determined reliably. This is the only way to guarantee a high level of functional availability. At the largest automotive trade fair in China, Bosch is presenting for the first time the new generation of its high-performance inertial measurement unit (IMU), which has been specially designed for ADAS and vehicle dynamics applications. Vehicles pitch when braking, lean to one side (roll) or lurch (swerve) when taking corners. In addition to these movements, the inertial sensor unit measures the vertical, longitudinal and lateral acceleration of the vehicle. From this, it can precisely calculate the relative change in position of the vehicle, enabling it to maintain the originally planned route with only minimal deviation. With various product variants, Bosch offers a high degree of scalability, from the cost-effective entry segment variant for assisted driving to the high-performance sensor for automated driving up to SAE level 4. Bosch uses sensor modules that are manufactured in the company’s own production facilities and, in addition to an in-depth understanding of the system, can draw on a comprehensive range of experience from over three decades of developing such inertial sensors.

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The new OX01N1B is designed to be a cost-effective solution for DMS cameras and features industry-leading QE, MTF and low power

OMNIVISION, a leading global developer of semiconductor technology, including advanced digital imaging, analog and display solutions, announced the new OX01N1B image sensor for in-cabin automotive driver monitoring systems. The device is the newest addition to OMNIVISION’s industry-leading Nyxel near-infrared technology family of automotive sensors and is a 1.5-megapixel RGB-IR or monochrome BSI global shutter (GS) sensor with a pixel size of 2.2 microns (µm) and an optical format of 1/4.51-inch. OMNIVISION will showcase the OX01N1B sensor with eco-system partners at Auto Shanghai, taking place April 23-May 2, 2025.

Key features of the OX01N1B include industry-leading NIR quantum efficiency at 36% for excellent low-light performance, a high modulation transfer function for better image quality and resolution, low power consumption, and an optical format that enables extremely compact camera module design. The OX01N1B uses OmniPixel 4-GS technology for simultaneous image detection in all pixels to accurately reproduce rapid motion without any distortions.

“Driver monitoring systems will be mandatory for all new cars in Europe starting in 2026; the entire global automotive industry is experiencing greater adoption rates of DMS as well, in an effort to improve road safety. As a result, OMNIVISION is introducing the new OX01N1B, which is the ‘sweet spot’ among performance, size and cost for mainstream DMS applications,” said Dr. Paul Wu, head of automotive product marketing, OMNIVISION. “The OX01N1B chip size is even smaller than the previous OX01H1B and it can reuse the same optical path since the pixel size and optical array size is identical. We’ve also added image signal processing to the OX01N1B device.” Dr. Wu adds, “There are many design considerations for DMS. With our expanded portfolio, we offer automotive OEMs a variety of cost and performance options and greater flexibility to place the DMS camera into different locations in their next-generation vehicle designs.”

“OMNIVISION’s new OX01N1B sensor delivers exceptional performance in a remarkably compact format, which makes it a perfect fit for our latest innovation, the All-In-One camera AI ONE,” said Martin Krantz, CEO and Founder of Smart Eye. “With this sensor at its core, we’ve been able to build the integrated DMS we’ve always envisioned, bringing together camera, sensor, processing, and software in a single, self-contained unit.”

The OX01N1B has integrated ASIL-B and cybersecurity that meet the latest industry standards. It comes in an OMNIVISION a-CSP package, allowing for higher-performance image sensors in tighter camera spaces. It is available in a reconstructed wafer option for designers who want to assembly a bare die imager into their camera module.

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Low-Cost RA0E2 Devices Target Consumer Electronics, Small Appliances, Industrial System Control and Building Automation

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today introduced the RA0E2 microcontroller (MCU) Group based on the Arm Cortex -M23 processor. The new, cost-competitive devices offer extremely low power consumption, extended temperature range, and a wide variety of peripheral functions and safety features.

Renesas introduced the RA0 MCU series in 2024 and it has quickly become very popular with a wide range of customers due to its affordability and low power consumption. RA0E1 devices have already been adopted in consumer electronics, appliance and white goods, power tools, industrial monitoring and other applications.

RA0E2 MCUs are fully compatible with RA0E1 devices, offering pin-expansion while maintaining the same peripherals and ultra-low power. This compatibility lets customers re-use existing software assets. The new devices deliver industry-leading power consumption of only 2.8mA current in active mode, and 0.89 mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA.

Renesas’ RA0E1 and RA0E2 ultra-low power MCUs deliver an ideal solution for battery-operated consumer electronics devices, small appliances, industrial system control and building automation application.

Feature Set Optimized for Low Cost

The RA0E2 devices have a feature set optimized for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0 MCUs also integrate timers, serial communications, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 5mm x 5mm 32-lead QFN.

In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to avoid costly and time-consuming “trimming,” even after the reflow process.

“The market reception for our RA0 Series has exceeded even our own high expectations,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “The RA0E2 Group MCUs deliver the same ultra-low power and price point that have been so popular with our customers. The addition of extended temperature range and more memory opens up even more applications and use cases. We plan to further expand the RA0 product lineup, delivering optimal solutions for 8-16 bit MCU users transitioning to 32-bit MCUs.”

Key Features of the RA0E2 Group MCUs

• Core: 32MHz Arm Cortex-M23
• Memory: Up to 128KB integrated Code Flash memory and 16KB SRAM
• Extended Temperature Range: Ta -40°C to 125°C
• Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC
• Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs
• Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage
• Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection
• Security: Unique ID, TRNG, AES libraries, Flash read protection
• Packages: 32- and 48-lead QFNs, 32-, 48-, and 64-pin LQFP

The new RA0E2 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of RA0E1 designs to larger RA0E2 devices.

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Infineon Technologies AG, a global semiconductor leader in power systems and IoT, and Marelli, a world-leading automotive systems manufacturer, are partnering to advance automotive display technology with an innovative MEMS laser beam scanning (LBS) system. Based on Infineon’s LBS technology, this solution enables Marelli to create immersive cockpit experiences free from the constraints of traditional displays. This cutting-edge technology will be showcased at Marelli’s booth during Auto Shanghai 25.

“The automotive industry’s demand for innovative optics solutions in cockpit designs is accelerating, and Infineon is committed to delivering these solutions to our customers faster than ever before,” said Dr. Thomas Schafbauer, Head of Sensor and RF Business Unit at Infineon. “With our focus on a faster time to market, we’re helping our customers stay ahead of the curve and capitalize on the growing demand for next-generation display technologies.”

“We are thrilled to collaborate with Infineon on MEMS LBS, which represents a significant leap in automotive display technology,” said Joachim Fetzer, Chief Technology and Innovation Officer at Marelli. “This innovative solution offers significant design freedom and efficiency, enabling us to create unique and engaging cockpit experiences for our customers with a faster innovation-to-customer approach.”

The Infineon MEMS LBS system is fully automotive-compliant. It is shock and vibration robust, and compliant up to ASIL-B. Its compact chip-scale package ensures versatility and enables flexible design possibilities for easy integration across various applications. Furthermore, the system’s high efficiency provides a bright, clear display even in high ambient light conditions and reduces power consumption and heat generation, making it highly suitable for demanding automotive environments. A large depth of field also offers focus-free projection, simplifying the optical design. These features allow OEMs to differentiate their cockpit designs while maintaining rich information displays.

The Infineon MEMS LBS system will be showcased at Marelli’s booth (Hall 1.2H, booth 1BF009) during Auto Shanghai 25.

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Designed for extreme environments and conditions, radiation-hardened MOSFETs are available from 100 Krad to 300 Krad Total Ionizing Dose

The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology announced the completion of its family of radiation-hardened power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N8587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID).

Microchip’s JANS series of rad-hard power devices are available in voltage ranges from 100–250V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a cost-effective power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments.

The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance, making them excellent options for applications that demand high-reliability components capable of withstanding the harsh environments of space and extending the reliability of power circuitry.

“Meeting the stringent specifications required for rad-hard MOSFETs is extremely challenging, and Microchip is pleased to achieve this development milestone by leveraging its proprietary rad-hard by design process and technology,” said Leon Gross, corporate vice president of Microchip’s discrete products group. “Our advanced technology provides our aerospace and defense customers with highly reliable and cost-effective solutions that meet the growing demand of the market and their applications.”

The JANSF and JANSR RH power MOSFETs serve as the primary switching elements in power conversion circuits, including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching. With low RDS(ON) and a low total gate charge, these power MOSFETs offer improved energy efficiency, reduced heat generation and enhanced switching performance when compared to similar devices on the market.

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President Donald Trump’s administration has dramatically escalated trade tensions by imposing heavy new tariffs on Chinese goods, some of which are as high as 245%. The rising economic and geopolitical competition between the United States and China is the driving force behind this audacious move, which marks a new chapter in Trump’s “America First Trade Policy.”

Late Tuesday, the White House released a fact sheet outlining how these penalties are a direct response to China’s recent actions. By imposing export restrictions on crucial raw minerals like gallium, germanium, and antimony as well as rare earth magnets and six heavy rare earth elements—items essential to the semiconductor, aerospace, and defense industries—Beijing has been showing off its power.

This strong reaction is a result of the U.S.’s perception that China is using its supply chain dominance as a weapon. “China now faces up to a 245% tariff on imports to the United States because of its retaliatory actions,” the White House stated.

Karoline Leavitt, the press secretary for the White House, added that although President Trump is amenable to a trade agreement with China, he is waiting for Beijing to initiate this increasingly heated tariff spat.

What’s Hard Hit: A More Detailed Look at Tariffs

Needles and syringes: 245%

Lithium-ion batteries: 173%

Seafood: 170%

Wool sweaters: 169%

Plastic dishes: 159%

Toasters: 150%.

Electric vehicles: 148%

Toys, dolls, and puzzles: 145%

Vitamin C: 145%

Car wheels: 73%

Semiconductors: 70%

Metal furniture: 70%

Car door hinges: 67%

Laptops: 20%

Children’s books: 0%

These tariffs have enormous knock-on effects that affect everything from clothing to electronics and medical equipment.

Examining the Specifics:

Devices and Cell Phones

According to the U.S. Commerce Department, electronics, including TVs and mechanical appliances, account for 46.4% of all imports from China in 2022, including smartphones and accessories. More over 80% of the $52 billion worth of cellphones imported into the United States in 2024 came from China. These were initially subject to 145% taxes, but new customs regulations exempted phones and laptops from a reciprocal 125% levy. They are nevertheless forced to pay a 20% total tariff, which builds up over time (0% base + 20% fentanyl-related penalty).

Furniture, Clothes, and Toys

China is a major supplier of consumer products, furniture, and textiles, accounting for more than 50% of toys, furniture, and almost 30% of U.S. textile imports. Up until now, items like tricycles and plush animals were duty-free, which kept costs down. Toys are no longer a deal, though, because to a new 145% tax (0% base + 20% fentanyl penalty + 125% reciprocal). Wool sweaters and other clothing are now subject to a staggering 168.5% total tax (16% base + 7.5% pre-2025 + 20% penalty + 125% reciprocal), which significantly raises the cost of wardrobes.

Conclusion: Companies will have to assess their supply chains to ascertain the damage as these tariffs are not universal; they vary by product, material, and exclusions. EV makers, electronic companies, and energy storage companies that rely on Chinese suppliers will suffer from the 173% tariff on lithium-ion batteries. What about the 70% semiconductor duty? For American computer companies already dealing with chip shortages, that presents even another challenge.

It’s a complicated problem, and if businesses pass it on, the true cost may end up on customers. The United States and China are currently engaged in a high-stake game of chess.

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IPEC eyes market expansion of its EV Charging Products and Solutions business with new funding and aims to diversify into wider power electronics domain

Bengaluru-based IPEC, a first-mover and innovator in the EV charging space, has secured an investment of $3 million from Nikhil Kamath and Abhijeet Pai’s Gruhas. This investment from Gruhas in IPEC’s journey strengthens IPEC’s mission to consolidate its leadership status in the EV Charging sector and accelerate its growth in the broader power electronics domain. Having successfully delivered over 1 million EV charging products to the top EV OEMs in India, IPEC is now gearing up to expand its manufacturing capacities to 50,000 units per month. IPEC offers a range of EV charging products that include private, portable, and public chargers as well as EV Connectors and Vehicle Charging Inlets. These products are fully compliant with various national and international standards and the latest localisation regulations, including the PM E-Drive and PLI Scheme. Beyond hardware, IPEC also offers Cloud-based Charging Management Systems (CMS) and a user-friendly mobile app for real-time control and insights. IPEC is an approved supplier to leading EV OEMs like Ather Energy, Bajaj Auto, Greaves (Ampere), and more. Recognising the emerging need for power electronics in the EV Sector and in the energy transition, IPEC was created in 2017 by the MEHER Group, together with DEKI Electronics & Sungho Electronics, with Zohra Khan as its CEO. At the core of energy transition is Power Electronics – the technology that facilitates efficient power conversion in EVs, charging infrastructure, renewable energy, energy storage systems and green hydrogen. IPEC is driving this energy transition in e-mobility with intelligent, reliable and cost-effective charging solutions at scale that address India’s specific needs and the rising demand for locally manufactured alternatives. Among its strengths is IPEC’s highly evolved design and manufacturing expertise combined with the ability to seamlessly integrate sophisticated hardware, advanced software and AI.

Zohra Khan, CEO of IPEC, remarked, “Traditionally, India’s reliance on imports for power electronics has been high. At IPEC, we are changing that by designing and manufacturing power electronic products in India – for India and the world. This investment by Gruhas shall further propel our contributions to the ‘Make In India’ mission and enhance India’s EV ecosystem. IPEC has witnessed a 40% growth in revenue in FY25 and anticipates doubling its revenue in FY26.

This investment also enables IPEC to expand our avenues and capabilities to launch IPEC into global markets. We are excited to have Gruhas as part of the team and look forward to a great journey ahead.” Abhijeet Pai, Co-Founder of Gruhas, adds, “IPEC is fast emerging as a changemaker in India’s EV charging ecosystem. As the country accelerates toward an electric future, reliable and scalable charging infrastructure built on quality components, sub-assemblies, and smart chargers becomes mission-critical. Together, Zohra and IPEC have led the way in this space. By already serving four of India’s top OEMs, they’ve set benchmarks in manufacturing chargers, especially for the two-wheeler segment. Their deep ecosystem understanding and technical capabilities position them to expand beyond two-wheelers, into broader applications. At Gruhas, we are committed to backing companies that scale in tandem with OEMs — building the long-term future of the industry together.”

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As India accelerates its journey toward a digitally empowered, sustainable energy future, Advanced Metering Infrastructure (AMI) has emerged as a linchpin for modernizing the nation’s power grid. With rising energy demands, expanding renewable integration, and bold policy initiatives like the Revamped Distribution Sector Scheme (RDSS), the role of smart metering has never been more critical.

In this exclusive interview with ELE Times, Ashish Sahay, Country Manager and Sales Director at Wirepas, shares insights into the transformative role of AMI and RF mesh technology in India’s smart grid evolution. With Wirepas leading the charge in next-gen, infrastructure-free connectivity, Sahay outlines how the company is enabling scalable, cost-effective solutions tailored to India’s unique power distribution landscape.

Excerpt:

ELE Times: India is undergoing a massive transformation in its power sector. How do you see Advanced Metering Infrastructure (AMI) playing a critical role in this journey toward a smarter, more resilient grid?

India’s energy landscape is evolving rapidly, and Advanced Metering Infrastructure (AMI) is emerging as a foundational pillar in building a smarter, more resilient power grid. With rising energy demand and a growing share of renewables, utilities need real-time visibility and control to ensure grid stability. Smart meters provide exactly that – enabling accurate consumption data, reducing non-commercial losses, and helping utilities become financially viable. The loss-making governmental electricity distribution companies, which already have implemented smart meters, have become profitable. This, in turn, allows them to reinvest in modernizing the grid. For consumers, AMI brings transparency, accurate billing, and better control over energy usage. It’s a critical enabler in India’s journey toward sustainable and equitable energy access.

ELE Times: Wirepas has introduced a unique 5G RF Mesh technology to the Indian market. Can you explain how this solution differs from traditional communication networks and how it improves scalability, cost-efficiency, and performance for smart metering?

Ashish Sahay: Wirepas’ RF mesh technology is fundamentally different from traditional communication networks used in smart metering. Instead of relying on costly and complex infrastructure like cellular base stations, Wirepas turns each smart meter into part of a decentralized, self-healing mesh network. This means meters connect directly with their neighbors, forming a resilient and scalable system with no single point of failure.

The real game-changer is cost and scalability. We have removed the need for network infrastructure. RF Mesh requires a point collecting data to be sent to the cloud. Wirepas has enabled in-meter gateway where,  one smart meter having a cellular connection can support up to 300 Wirepas RF mesh meters, dramatically reducing communication costs. With built-in wireless modules running Wirepas software, utilities can deploy at scale without compromising on performance – achieving proven 99.9% reliability even in challenging environments. It’s a flexible, high-performance solution designed from the ground up to meet the unique demands of India’s smart metering rollout.

Current regulatory setup in India, has not yet adapted to the European harmonized standard for 5G mesh. India has 1880-1900 MHz spectrum available, but not yet allocated for NR+ 5G standard, like in Europe. For this reason Wirepas has adapted 5G technology to be used on 865-868 MHz spectrum with less performance. Going further, the Indian government should enable NR+ 5G technology to be used on the 1880-1900 MHz band which is currently allocated to legacy DECT devices.

ELE Times: Despite government mandates, large-scale smart grid adoption still faces hurdles. From your experience, what are the key challenges utilities face when implementing AMI solutions, and how can they be addressed?

Ashish Sahay: Despite strong government support, large-scale smart grid adoption in India still faces several key hurdles. One major challenge is the industry’s limited experience with smart metering – especially early on, when the local ecosystem was still developing under the Make in India initiative. Many utilities and contractors are still climbing the learning curve, which has led to delays and uneven rollouts.

Reliable communication is another critical issue. AMI depends on consistent, high-quality connectivity, yet cellular coverage in India can be patchy – especially in rural or densely built-up areas. In some cases, only 70% of cellular smart meters maintain a connection, and even when coverage exists, the quality may fall short of AMI service requirements. Workarounds like BLE-based smartphone reconnections are not scalable solutions. While lower cost RF Mesh can deliver better coverage and SLA. Typically each smart meter using Wirepas Mesh communication technology is able to communicate via 50 or more meters, providing seamless network coverage and strong network signal.

Additionally, utilities must navigate the massive scale of deployment and the hidden costs tied to cellular technologies, such as SEP (Standard Essential Patent) fees and long-term subscription costs, which can significantly impact margins.

To overcome these challenges, solutions like Wirepas Mesh offer a compelling alternative. By turning each smart meter into a node in a self-healing, decentralized mesh network, Wirepas eliminates dependency on cellular coverage. It also reduces cost and risk by avoiding SEP-related liabilities. This approach not only ensures reliable connectivity across urban and rural environments but also supports fast, large-scale rollouts, making it a strong fit for India’s ambitious AMI goals.

ELE Times: India’s power sector is guided by ambitious digitalization goals under initiatives like RDSS. How aligned is Wirepas with these national programs, and what role does policy play in accelerating smart metering deployment?

Ashish Sahay: Wirepas is fully aligned with India’s digitalization goals under initiatives like the Revamped Distribution Sector Scheme (RDSS). These policy-driven programs have been instrumental in accelerating smart metering adoption by providing clear targets, financial support, and standardized requirements that create a level playing field for all stakeholders. Without such initiatives, large-scale rollouts would be fragmented and far slower. For Wirepas, this policy alignment means we can offer scalable, infrastructure-free connectivity that meets national standards, helping utilities deploy faster, more efficiently, and at lower cost. Policy has truly been the catalyst turning smart metering from a tech upgrade into a national imperative.

India government RDSS is becoming a worldwide role model of well executed national smart metering programs. Defining the standard at the right level enables the free competition and helps utilities to reach their roll-out targets in time.

ELE Times: You’ve worked across global markets—what lessons from international smart grid rollouts are particularly relevant to India’s unique power distribution landscape

Ashish Sahay: The lifetime of AMI systems is increasingly reaching 15 years or more. This places significant demands on the selected technologies to ensure they do not become obsolete during their operational lifespan.

India tends to focus on short-term goals, such as the upfront cost of hardware, while in reality, maintenance costs (OPEX) play a major role in the overall business case. For instance, parts of Southern Europe widely adopted PLC technology, which, despite the low cost of smart meters, led to high system maintenance costs.

In Europe, in-meter RF mesh gateways have proven to be by far the most economical solution for deploying RF connectivity, effectively covering both rural and densely populated urban areas. India has the opportunity to replicate this success.

ELE Times: With rapid innovation in IoT and connectivity, where do you see the future of connected utilities heading in India over the next five years—and how is Wirepas positioning itself to lead that future?

Ashish Sahay: Over the next five years, India’s connected utilities will evolve into highly data-driven, responsive systems, powered by real-time insights and seamless IoT connectivity. At Wirepas, we see this transformation as a huge opportunity, and we’re positioning ourselves to lead it. Today, our RF mesh technology is already used in around 25% of new smart meter deployments in India, and we’re committed to expanding that footprint by partnering with local players and licensing our technology to Indian manufacturers.

Our solution is built for scale, performance, and future demands, supporting granular data collection intervals and ultra-resilient communication, all with the lowest total cost of ownership. We’re not just keeping pace with innovation; we’re setting the standard for what AMI connectivity should look like in India’s next phase of digital utility transformation.

Wirepas based systems enable utilities to also benefit from load balancing use cases to utilize the same RF communication with the electricity loads connected to the grid.

The post Rewiring the Future of India’s Power Grid with Wirepas appeared first on ELE Times.

Featuring Low 0.88 mm Profile and Wettable Flanks, Space-Saving Devices Provide Improved Thermal Performance and Efficiency

Vishay Intertechnology, Inc. introduced 27 standard and Trench MOS Barrier Schottky (TMBS) surface-mount rectifiers in the low profile DFN33A package with wettable flanks. Providing space-saving, high efficiency solutions for commercial, industrial, telecom, and automotive applications, the standard devices are the industry’s first in this package size and provide current ratings up to 6 A, while the TMBS devices deliver industry-best current ratings up to 9 A. Offering a wide range of voltage options from 60 V to 200 V for TMBS and up to 600 V for standard rectifiers, the devices are available in Automotive Grade, AEC-Q101 qualified versions.

The latest package in Vishay’s Power DFN family, the DFN33A features a compact 3.3 mm by 3.3 mm footprint and an extremely low typical height of 0.88 mm, allowing the Vishay General Semiconductor rectifiers released today to make more efficient use of PCB space. Compared to the conventional SMB (DO-214AA) and eSMP series SMPA (DO-220AA), the package’s size is 44 % and 20 % smaller, respectively. In addition, the device’s low profile is 2.6x thinner than the SMB (DO-214AA) and SMC, and 7 % thinner than the SMPA (DO-220AA). At the same time, the rectifiers’ optimized copper mass design and advanced die placement technology allow for superior thermal performance that enables operation at higher current ratings.

The devices are intended for low voltage, high frequency inverters, DC/DC converters, freewheeling diodes, and polarity and rail to rail protection in hot swap circuits for baseband antennas and power over Ethernet (PoE) for switches, routers, and optical network equipment. For these applications, the rectifiers offer high temperature operation up to +175 °C, while their exceptionally low forward voltage drop and low leakage current enhance design efficiency. The wettable flanks of their DFN33A package allow for automatic optical inspection, eliminating the need for an X-ray inspection.

Ideal for automated placement, the rectifiers offer an MSL moisture sensitivity level of 1, per J-STD-020, LF maximum peak of 260 °C. The devices are RoHS-compliant and halogen-free, and their matte tin-plated leads meet the JESD 201 class 2 whisker test.

The post Vishay Intertechnology 600 V Standard and 60 V to 200 V TMBS Rectifiers Deliver High Current Ratings to 9 A in DFN33A Package appeared first on ELE Times.

The market for electric vehicles continues to gather pace with a strong volume growth of both battery electric vehicles and plug-in hybrid electric vehicles. The share of electric vehicles produced is expected to see double-digit growth by 2030 with a share of around 45 percent compared to 20 percent in 2024. Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications.

The EDT3 and RC-IGBT bare dies have been engineered to deliver high-quality and reliable performance, empowering customers to create custom power modules. The new generation EDT3 represents a significant advancement over the EDT2, achieving up to 20 percent lower total losses at high loads while maintaining efficiency at low loads. This achievement is due to optimizations that minimize chip losses and increase the maximum junction temperature, balancing high-load performance and low-load efficiency. As a result, electric vehicles using EDT3 chips achieve an extended range and reduce energy consumption, providing a more sustainable and cost-effective driving experience.

“Infineon, as a leading provider of IGBT technology, is committed to delivering outstanding performance and reliability”, says Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon Technologies. “Leveraging our steadfast dedication to innovation and decarbonization, our EDT3 solution enables our customers to attain ideal results in their applications.”

The EDT3 chipsets, which are available in 750 V and 1200 V classes, deliver high output current, making them well-suited for main inverter applications in a diverse range of electric vehicles, including battery electric vehicles, plug-in hybrid electric vehicles, and range-extended electric vehicles. Their reduced chip size and optimized design facilitate the creation of smaller modules, consequently leading to lower overall system costs. Moreover, with a maximum virtual junction temperature of 185°C and a maximum collector-emitter voltage rating of up to 750 V and 1200 V, these devices are well-suited for high-performance applications, enabling automakers to design more efficient and reliable powertrains that can help extend driving range and reduce emissions.

“Infineon, as Leadrive’s primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,” said Dr. Ing. Jie Shen, Founder and General Manager of Leadrive. “The latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.”

The 1200 V RC-IGBT elevates performance by integrating IGBT and diode functions on a single die, delivering an even higher current density compared to separate IGBT and diode chipset solutions. This advancement translates into a system cost benefit, attributed to the increased current density, scalable chip size, and reduced assembly effort.

Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK Drive G2 automotive power module, delivering enhanced performance and capabilities across the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, enhanced ease of use, and new features such as an integration option for next-generation phase current sensors and on-chip temperature sensing, contributing to system cost improvements.

All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors.

The post Infineon introduces new generation of powerful and energy- efficient IGBT and RC-IGBT devices for electric vehicles appeared first on ELE Times.

India is accelerating its semiconductor ambitions, aiming to secure 10% of global chip demand by 2030. Central to this strategy is the India Semiconductor Mission (ISM), launched in December 2022 with an allocation of ₹76,000 crore, designed to foster a sustainable semiconductor ecosystem and reduce reliance on imports.

In a significant development, Tata Electronics and Taiwan’s PSMC have announced a joint venture to establish India’s first 12-inch wafer fabrication facility in Dholera, Gujarat. With an investment of $11 billion, this project is expected to generate over 20,000 jobs and focus on manufacturing power management ICs, display driver ICs, microcontrollers, and high-performance computing logic components.

The 2025 budget reflects the government’s commitment, doubling the allocation for chip initiatives to ₹2,499.96 crore for FY26. This includes increased funding for compound semiconductors, sensors, and chip assembly/testing units, with a 56% rise to ₹3,900 crore, and nearly doubling the allocation for the design-linked incentive (DLI) to ₹200 crore.

Strategic partnerships with countries like Singapore, the US, Japan, and Taiwan are also being pursued to enhance technology transfer, skill development, and foreign direct investment. These efforts position India as a key player in the global semiconductor supply chain, aligning with the ‘China Plus One’ strategy amid evolving geopolitical dynamics.

The post India Aims to Capture 10% of Global Chip Demand by 2030 appeared first on ELE Times.

According to a recent report by NITI Aayog, the average cost of semiconductor chips in vehicles is projected to rise from $600 to $1,200 by 2030. This increase is attributed to the growing integration of advanced technologies in automobiles, such as electric powertrains, Advanced Driver Assistance Systems (ADAS), Internet of Things (IoT) connectivity, and autonomous driving capabilities. As vehicles become more connected and intelligent, the demand for sophisticated semiconductor chips escalates, leading to higher costs.

This trend signifies a broader transformation in the automotive industry, shifting from traditional fuel-based vehicles to electric vehicles (EVs) equipped with next-generation features. The incorporation of these technologies necessitates more complex and expensive semiconductor components, thereby increasing the overall cost per vehicle. The report underscores the pivotal role of electronics and semiconductors in modern vehicles, highlighting the need for the automotive sector to adapt to these technological advancements.

As India positions itself as a significant player in the global semiconductor market, this development presents both challenges and opportunities. The rising demand for high-tech components in vehicles underscores the importance of strengthening domestic semiconductor manufacturing capabilities to meet future needs.

The post Cost of Semiconductor Chips per Vehicle to Double by 2030: NITI Aayog appeared first on ELE Times.

U.S. semiconductor equipment manufacturers are facing potential annual losses exceeding $1 billion due to new tariffs proposed by President Donald Trump’s administration. Major companies like Applied Materials, Lam Research, and KLA could each incur losses of approximately $350 million, while smaller firms such as Onto Innovation may also experience significant financial impacts.

These projected losses stem from anticipated declines in overseas sales of less advanced equipment, increased costs from sourcing alternative components, and expenses related to tariff compliance. The Trump administration has temporarily paused previously announced reciprocal tariffs but is considering further actions to promote domestic manufacturing, including initiating an import investigation.

This development adds to the challenges already faced by the industry following former President Biden’s export controls aimed at limiting advanced chip manufacturing in China, which have prompted China to bolster its domestic semiconductor capabilities. Industry representatives have been in discussions with U.S. officials, emphasizing the need to consider the broader implications of these tariffs on the global semiconductor supply chain.

The post US Tariffs Could Cost Chip Equipment Makers Over $1 Billion Annually appeared first on ELE Times.

• The industry’s first high-speed, single-chip lidar laser driver can detect objects faster and more accurately than discrete solutions.
• New high-performance automotive bulk acoustic wave (BAW)-based clocks are 100 times more reliable than quartz-based clocks, enabling safer operation.
• Automotive manufacturers can enhance front and corner radar sensor functions with TI’s newest millimeter-wave (mmWave) radar sensor.

Texas Instruments (TI) introduced a new portfolio of automotive lidar, clock and radar chips to help automakers transform vehicle safety by bringing more autonomous features to a wider range of cars. TI’s new LMH13000, the industry’s first integrated high-speed lidar laser driver, delivers ultra-fast rise time to improve real-time decision-making. The industry’s first automotive BAW-based clocks, the CDC6C-Q1 oscillator and LMK3H0102-Q1 and LMK3C0105-Q1 clock generators, improve advanced driver assistance system reliability. Addressing evolving ADAS needs, TI’s new AWR2944P mmWave radar sensor offers advanced front and corner radar capabilities.

“Our latest automotive analog and embedded processing products help automakers both meet current safety standards and accelerate toward a collision-free future,” said Andreas Schaefer, TI general manager, ADAS and Infotainment. “Semiconductor innovation delivers the reliability, precision, integration and affordability automakers need to increase vehicle autonomy across their entire fleet.”

Real-time decision-making with 30% longer distance measurements

A crucial technology for the future of safe autonomous vehicles, lidar provides a detailed 3D map of the driver’s surroundings. This enables vehicles to accurately detect and quickly react to obstacles, traffic and road conditions to improve real-time decision-making. TI’s new LMH13000 is the industry’s first integrated high-speed laser driver to deliver an ultra-fast 800ps rise time, achieving up to 30% longer distance measurements than discrete solutions. With integrated low-voltage differential signaling (LVDS), complementary metal-oxide semiconductor and transistor-transistor-logic control signals, the device eliminates the need for large capacitors or additional external circuitry. This integration also supports an average 30% reduction in system costs while reducing solution size by four times, empowering design engineers to discretely mount compact, affordable lidar modules in more areas and across more vehicle models

As lidar technology reaches higher output currents, vast variations in pulse duration over temperature make it challenging to meet eye safety standards. TI’s LMH13000 laser driver provides up to 5A of adjustable output current with only 2% variation across its -40C to 125C ambient temperature range, compared to discrete solutions that can have up to 30% variation. The device’s short pulse-width generation and current control enable the system to meet Class 1 U.S. Food and Drug Administration eye safety standards.

Design a reliable ADAS with the industry’s first automotive BAW-based clocks

Electronics in ADAS and in-vehicle infotainment systems must work reliably while facing temperature fluctuations, vibrations and electromagnetic interference. With TI’s BAW technology benefits, the new CDC6C-Q1 oscillator and LMK3H0102-Q1 and LMK3C0105-Q1 clock generators increase reliability by 100 times compared to traditional quartz-based clocks, with a failure-in-time rate of 0.3. Enhanced clocking precision and resilience in harsh conditions enable safer operation, cleaner data communication, and higher-speed data processing across next-generation vehicle subsystems.

Additionally, the company unveiled a new front and corner radar sensor, the AWR2944P, building on TI’s widely adopted AWR2944 platform. The new radar sensor’s enhancements improve vehicle safety by extending detection range, improving angular accuracy, and enabling more sophisticated processing algorithms. Key enhancements include:

• An improved signal-to-noise ratio.
• Increased computational capabilities.
• A larger memory capacity.
• An integrated radar hardware accelerator that allows the microcontroller and digital signal processor to execute machine learning for edge artificial intelligence applications.

TI’s new automotive lidar, clock and radar solutions build on the company’s commitment to helping engineers design adaptable ADAS for a safer, more automated driving experience.

The post TI enables automakers to advance vehicle autonomy and safety with new chips in its automotive portfolio appeared first on ELE Times.

In an exclusive interaction with ELE Times, Jaya Singh, Director – MSP WW Development at Texas Instruments, delves into the breakthrough innovations behind the world’s smallest MCU. She highlights how TI’s advanced packaging technologies, global collaboration, and the pivotal role of the India R&D team enabled unprecedented miniaturization without compromising performance or efficiency. This conversation also explores TI’s strategic roadmap, real-world applications, and the future of ultra-low-power microcontrollers in next-gen electronics.

ELE Times: What breakthrough technologies and design innovations enabled Texas Instruments to develop the world’s smallest MCU without compromising performance, power efficiency, or functionality?

Jaya Singh: Despite its tiny size, the world’s smallest MCU offers robust features, including 16KB of flash memory, a 12-bit ADC with three channels, three timers, and 6 GPIOs. With an Arm® Cortex®-M0+ CPU running at 24 MHz, it empowers engineers to create compact, power-efficient designs without compromising on performance.

Texas Instruments achieved this by leveraging advanced wafer chip-scale packaging (WCSP) technology in combination with feature optimization efforts. WCSP offers the smallest possible form factor by directly connecting an array of solder balls to the silicon die, eliminating the need for a larger package. This results in a package size virtually equal to that of the silicon itself.

By fitting eight solder balls into a compact 1.38 mm² footprint, TI enabled higher feature integration per square millimeter. This miniaturization was further complemented by a deep understanding of customer needs, allowing TI to deliver a highly optimized embedded solution that balances size, cost, and functionality.

ELE Times: What role did TI India R&D team play in this development? Can you highlight their key contributions, collaboration with the global team, and the specific engineering challenges they helped overcome?

Jaya Singh: The TI India R&D team was involved in the complete lifecycle of the product, playing an instrumental role in the end-to-end development of the world’s smallest MCU. The India team played a vital role in defining the product specifications and ensuring a highly cost-optimized and efficient solution.

The India team collaborated closely with global teams, which enabled the integration of deep technical expertise with real-world application insights. This partnership helped overcome key engineering challenges, such as achieving ultra-small packaging without sacrificing functionality or reliability.

In parallel, the India team focused on tailoring the MCU to address the specific needs of customers. This included optimizing features such as memory configuration, analog peripherals and power efficiency to align with the demands of embedded systems used in industrial, automotive and consumer electronics sectors, such as those in India.

By combining technical leadership with market localization, the TI India R&D team ensured that this innovation not only set a global benchmark but also delivered practical value across key applications.

ELE Times: Cost optimization is critical in semiconductor design. How did TI achieve the right balance between affordability, energy efficiency, and high performance in this ultra-miniature MCU?

Jaya Singh: Achieving the optimal balance between cost, efficiency and performance required close collaboration across TI’s global engineering, design and manufacturing teams. This cross-functional effort enabled a holistic approach to cost optimization, ensuring that every element of the product was purposefully engineered for value.

Key innovations in manufacturing technology, packaging and circuit design played a pivotal role in making the MCU both compact and powerful.

ELE Times: What are some real-world applications where this MCU will be a game-changer, particularly in industries like wearables, medical devices, and ultra-low-power IoT?

Jaya Singh: As electrical circuits and system designs become smaller, board space is increasingly considered a scarce and valuable resource. TI’s MSPM0C1104 WCSP MCU enables innovation in size-constrained applications such as personal electronics, medical wearables, and factory automation. Using an ultra-small, feature-rich MCU in high-density designs enables engineers to design solutions with more room for additional components and larger batteries for increased operational lifetimes.

ELE Times: How does this innovation fit into TI’s broader roadmap for ultra-low-power and miniaturized semiconductor solutions, and what can we expect next in this space?

Jaya Singh: Since the launch of our Arm® Cortex®-M0+ MCU portfolio in 2023, Texas Instruments has rapidly expanded its offering to over 100 devices for industrial, medical and automotive systems. The portfolio offers scalable configurations of on-chip analog peripherals and a range of computing options, including other small packages to help reduce board size and bill of materials. We support the portfolio with a comprehensive ecosystem of hardware and software resources, to help engineers reduce system cost and complexity while meeting diverse application needs. In the future, we plan to continue expanding the portfolio to meet the growing needs of the industry.

The introduction of the world’s smallest MCU demonstrates TI’s commitment to developing small packages across our embedded processing and analog portfolio that help our customers innovate in size-constrained applications. The trend of smaller, more compact design requirements will continue to grow. Packaging advancements enable engineers to integrate more functionality into smaller form factors while maintaining high levels of precision and performance, enhancing user experiences and creating new design possibilities.

TI’s investments in internal manufacturing and technology have given the company greater control of its entire manufacturing process, while also lowering costs. By optimizing packaging solutions for specific application needs, TI can explore new design approaches and technologies while achieving the highest levels of quality and reliability – driving innovation and meeting changing industry demands.

ELE Times: With semiconductor technology constantly evolving, what unique challenges and opportunities do you foresee in pushing the boundaries of MCU miniaturization further?

Jaya Singh: With each new generation of electronics, consumers expect continuous advancements in size and functionality. To meet these demands, engineers are challenged to add new features while maintaining or decreasing their products’ current form factors. TI is committed to helping our customers overcome their design challenges and get to market quickly with MCUs that are scalable, cost-optimized and easy-to use.

The post Pushing the Boundaries of Miniaturization with Texas Instruments’ New MCU appeared first on ELE Times.

As the electric vehicle (EV) revolution accelerates globally, Battery Management Systems (BMS) have emerged as the unsung heroes—quietly orchestrating the health, performance, and safety of advanced battery packs that power the next generation of mobility as well as energy storage solutions.

With the global shift toward high-voltage architectures, solid-state chemistries, and connected ecosystems, BMS technology is undergoing a profound transformation. Today’s systems are not just passive controllers—they are intelligent, predictive, cyber-resilient platforms enabling faster charging, longer life, and circular energy applications.

In this feature, ELE Times explores the frontiers of BMS development, with a focus on innovations in ultra-high-voltage support, real-time AI integration, cybersecurity, thermal breakthroughs, and global standardization. Industry leaders like Delta Electronics offer valuable insights into the technological shifts shaping this pivotal domain.

Next-gen battery chemistries like solid-state and sodium-ion promise higher energy densities, safer designs, and reduced reliance on scarce materials. However, their diverse electrochemical properties require adaptable and highly intelligent BMS platforms.

Delta Electronics, an industry leader in power and thermal solutions, is playing a key role in enabling this transition. Their latest BMS innovations are designed to be chemistry-agnostic, capable of managing not only conventional lithium-ion batteries but also emerging formats.

“Our advanced BMS platforms are optimized for ultra-high-voltage architectures—800V and beyond,” Rajesh Kaushal, Energy Infrastructure & Industrial Solutions (EIS) Business Group Head, India & SAARC, Delta Electronics, shared. “This is critical for enabling faster charging and higher drivetrain efficiency. We’re also leveraging adaptive control algorithms and AI-driven analytics to achieve precise thermal management, voltage control, and SOC estimation across various battery chemistries, including solid-state and sodium-ion.”

BMS systems are becoming smart, self-optimizing, and responsive—thanks to AI and edge computing.

Delta’s integration of AI-driven algorithms and edge computing empowers its BMS to perform real-time cell-level diagnostics, dynamically optimize charging protocols, and conduct predictive analytics for early fault detection and lifecycle management. This evolution from reactive to predictive management allows early detection of anomalies, degradation trends, and potential failure points.

“By processing battery data at the edge, our BMS platforms reduce latency and improve responsiveness,” Delta noted. “This ensures superior energy distribution, thermal safety, and charging efficiency—even under dynamic operating conditions.”

The result is a system that adapts on the fly—extending battery life, maximizing range, and enhancing user safety.

As EVs become increasingly connected, over-the-air (OTA) updates and cloud integration introduce new vectors for cybersecurity risks. Securing the BMS, which has access to critical vehicle and battery functions, becomes a top priority.

Leading system developers are engineering their BMS architectures in compliance with ISO 21434 for automotive cybersecurity and ISO 26262 to meet stringent functional safety requirements. Robust hardware encryption, secure boot mechanisms, and real-time anomaly detection algorithms are now standard features in next-gen BMS platforms.

Delta is among the innovators focusing on this dual mandate of cybersecurity compliance and functional reliability, ensuring that their BMS solutions remain resilient against evolving threat landscapes.

With growing consumer demand for sub-10 minute fast charging, thermal stress becomes a critical bottleneck. Charging a large battery at high currents within minutes can induce rapid temperature rise, risking thermal runaway if not managed effectively.

Breakthroughs in active liquid cooling, phase-change materials, and smart heat sinks are being integrated directly into the BMS ecosystem. With AI-assisted thermal forecasting, the system can predict potential heat buildup and adjust the charging cycle in advance to prevent overheating.

Delta is investing in advanced cooling technologies that work in tandem with AI-driven thermal models. “Thermal runaway mitigation is not just about removing heat—it’s about knowing where and when to intervene,” Mr. Kaushal explained.

Traditional passive cell balancing wastes energy as heat, especially in large battery systems. New-generation BMS solutions are increasingly adopting active balancing to redistribute charge dynamically and efficiently across cells.

Coupled with real-time impedance tracking, these systems can detect early signs of cell aging or imbalance, allowing preemptive corrections to preserve performance and extend battery lifespan.

Delta’s BMS leverages both techniques, resulting in better thermal uniformity, extended range, and improved charging cycles over the battery’s lifetime.

As the EV ecosystem expands beyond traditional use cases, modern BMS architectures are being reimagined to accommodate battery swapping, second-life deployment in stationary energy storage, and the broader goals of circular economy frameworks. This requires a high degree of interoperability, with standardized communication protocols and modular software layers.

Forward-looking companies are aligning with global standards like IEC 62984 and OpenBMS frameworks, ensuring that their systems can seamlessly integrate into a variety of energy use cases—from grid storage to micro-mobility.

Delta is actively pursuing interoperability across its BMS product lines, supporting modular deployment in vehicle and stationary storage contexts alike.

The future of mobility rests not just on battery cells but on the intelligence that governs them. As BMS platforms become more adaptive, predictive, and secure, they are evolving into the central nervous systems of modern EVs and energy storage systems.

With pioneering work by companies like Delta, the industry is on track to support higher voltages, faster charging, and longer battery life—while embracing sustainability and digital intelligence at every level.

At ELE Times, we will continue to track the cutting-edge of BMS and battery technology as the heartbeat of the global energy transition.

The post Redefining Battery Intelligence: The Future of BMS in an 800V, AI-Driven EV Era appeared first on ELE Times.

As embedded consumer electronics evolve toward greater functionality and miniaturization, audio systems are challenged to deliver high performance while consuming less board space, less power, and generating minimal EMI. Whether it’s a Bluetooth speaker on a picnic table, a surveillance system mounted on an exterior wall, or a handheld gaming device running on a lithium-ion cell, the expectations for clear, powerful audio in compact, thermally constrained systems have never been higher.

Enter the NAU82110YG, a mono, analog-input, high-efficiency Class-D audio amplifier developed to meet the rigorous design needs of modern consumer and IoT electronics. With its 18W output capability, filter-free topology, and low-noise performance, this amplifier is optimized not only for output power, but for system-level design integration, EMI mitigation, and power-aware operation.

At the heart of the NAU82110YG is its Class-D amplifier topology—a PWM-based design that uses high-frequency switching (pulse-width modulation) to amplify audio signals. Unlike linear Class-AB amplifiers that operate transistors in the active region (and dissipate significant power as heat), Class-D amplifiers operate power MOSFETs in either saturation or cutoff, minimizing conduction losses.

This fundamental architecture results in power efficiency improvements of up to 66% over Class-AB designs, with typical system efficiencies exceeding 90% under moderate-to-high load conditions. The reduced thermal footprint of Class-D architectures allows for:

• Smaller heat sinks or passive cooling

• Longer battery life in portable systems

• Higher output power in thermally constrained designs
  

The NAU82110YG implements this efficiency to full effect, delivering:

• Up to 18W output into 4 Ω at 12V

• Up to 10W output into 8 Ω

• <6 mA quiescent current @ 12V supply
  

This makes it an excellent candidate for always-on or battery-powered applications that cannot afford high idle currents or thermal load.

Conventional Class-D amplifiers require low-pass LC filters at the output stage to smooth switching artifacts and limit electromagnetic interference (EMI). However, these components increase system cost, consume PCB space, and complicate layout—particularly in tightly integrated wireless products.

The NAU82110YG breaks this dependency through a filterless Class-D output powered by two key innovations:

• Spread-Spectrum Oscillator: Dynamically modulates the PWM switching frequency, spreading EMI energy across a broader spectral band to avoid regulatory test points (e.g., FCC/CE Class B).

• Slew-Rate Control: Softens the transitions at the output stage to reduce high-frequency harmonic energy, thereby suppressing radiated and conducted EMI.
  

The result is compliant EMI performance with no external filtering components required—an enormous benefit in space- and cost-constrained designs such as smart home nodes and compact audio devices.

While output power and efficiency are critical, audio signal integrity is paramount. The NAU82110YG is engineered to maintain high-fidelity signal reproduction even in noisy electrical environments. It achieves this through:

• Signal-to-Noise Ratio (SNR): 103 dB — ensuring clean output with minimal background hiss or digital noise coupling

• Power Supply Rejection Ratio (PSRR): >83 dB @ 217 Hz — isolating audio performance from ripple and transients common in switched-mode power supplies (SMPS) or wireless SoCs
  

This makes the NAU82110YG particularly well-suited for:

• Wireless audio products, where RF-induced noise and digital switching transients can corrupt audio paths

• Devices powered by buck converters or USB power, where 5V/12V supplies are inherently noisy
  

One of the standout features of the NAU82110YG is its dual-mode input architecture:

• Single-ended input for simpler source configurations or legacy audio chains

• Differential input for improved common-mode noise rejection—ideal in environments with significant ground bounce or shared power rails
  

In addition, the amplifier provides programmable gain control via:

• I²C control: Up to 32 discrete gain levels, allowing firmware-based dynamic range adjustment or real-time volume control

• Pin-selectable preset gains: Five options (0 / 20 / 24 / 32 / 36 dB), allowing low-latency analog selection for fixed-function systems or GPIO-driven gain staging
  

This flexibility enables the same amplifier to support diverse product families, audio input standards, and user interface styles.

For designers targeting industrial, outdoor, or high-volume consumer applications, system-level protection is non-negotiable. The NAU82110YG incorporates a comprehensive suite of protections to safeguard both the amplifier and downstream components:

Combined, these features simplify system qualification under thermal, electrical, and fault conditions, accelerating product certification (e.g., CE, UL, IEC-60065) and reducing RMA rates.

The NAU82110YG is optimized for a wide array of real-world applications:

• Bluetooth Speakers: Efficient amplification, dynamic gain, filter-free EMI compliance for compact designs

• Wireless Doorbells & Intercoms: Low idle current, fast startup (<5 ms), speaker protection for long-term use

• Outdoor Surveillance: Wide operating temperature, PSRR for SMPS isolation, differential input for long cable runs

• Handheld Game Consoles: Audio clarity with minimal power draw, quick response to sleep/resume cycles

The NAU82110YG represents a significant evolution in Class-D amplifier design, not just in raw performance, but in system-oriented integration. It addresses long-standing challenges—EMI compliance, board space constraints, thermal management, and dynamic audio control—through a highly integrated, filter-free, and protection-rich solution.

For engineers designing tomorrow’s connected devices, the NAU82110YG offers more than amplification: it provides an audio subsystem foundation that is efficient, flexible, and reliable by design.

For datasheets, application notes, and reference designs, visit:
https://www.nuvoton.com/products/smart-home-audio/audio-amplifiers/class-d-series/nau82110yg/

The post Engineering the Future of Compact Audio: A Deep Dive into the NAU82110YG Filter-Free Class-D Amplifier appeared first on ELE Times.

NAU82110YG – The New High-E Audio Device Ideal for Bluetooth Speakers, Wireless Doorbells, Outdoor Surveillance Systems, and Handheld Game Consoles

Nuvoton announced the NAU82110YG, a new Class-D audio amplifier. The NAU82110YG Class-D amplifier features high-efficiency mono, analog input, and delivers up to 10W (8 Ω load) or 18W (4 Ω load) output power. With multiple gain adjustment options, it is the ideal choice for consumer electronics applications such as Bluetooth speakers, wireless doorbells, outdoor surveillance systems, and handheld gaming consoles.

As the importance of quality of life grows, music plays an increasingly vital role in daily lives, driving strong demands for superior sound. Consumers now seek high-quality audio and advanced products, making power efficiency and noise reduction crucial in the electronics market. To address these needs, Nuvoton has introduced the NAU82110YG, a next-generation Class-D amplifier. This innovative product offers lower power consumption, reduced noise, and a range of features designed to enhance user experience.

The NAU82110YG mono Class-D audio amplifier features low quiescent current (6 mA @ 12V), high output power, and comprehensive device protection, suitable for various consumer audio applications. Additionally, this new amplifier supports both single-ended and differential input signal modes, providing flexibility for audio setup.

NAU82110YG Key Features

1. Multiple Gain Settings:

• Configurable via I2C interface with 32 gain levels
• Selectable via control pins with five preset gains: 0 dB / 20 dB / 24 dB / 32 dB / 36 dB

2. Comprehensive Device Protection:

• Overcurrent Protection (OCP)
• Overvoltage Protection (OVP)
• Undervoltage Lockout (UVLO)
• Overtemperature Protection (OTP)

3. Speaker Protection: Anti-Clipping Protection (ACP)
4. Package: QFN20
5. Operating Temperature Range: -40°C ~ 105°C

Superior EMI Performance, Filter-Free
The NAU82110YG amplifier stands out by eliminating the need for an external output filter, thanks to its spread-spectrum-oscillator technology and slew-rate control, effectively reducing electromagnetic interference (EMI). Moreover, it offers enhanced immunity and power supply rejection ratio (PSRR) of > 83 dB at 217 Hz. With an exceptional signal-to-noise ratio (SNR) of 103 dB, the NAU82110YG is an excellent fit for Class-D audio amplifiers in wireless and AM () frequency band applications.

Leap Forward in Efficiency and Power
The Class-D topology represents a significant leap forward in both power efficiency and noise minimization in audio devices. By generating a binary square wave, Class-D amplifiers efficiently amplify the signal through power device switching. Compared to Class-AB devices, Class-D amplifiers offer power efficiencies that are two-thirds better.

The NAU82110YG Class-D audio amplifier excels in driving a 4 Ω load with an impressive output power of up to 18W and features a chip-enable pin for a fast start-up time of just 4.6 ms.

NAU82110YG Target Applications

The new Class-D audio amplifier is designed for consumer electronics applications including Bluetooth speakers, wireless doorbells, outdoor surveillance systems, and handheld gaming consoles.

The post Nuvoton Introduces Excellent SNR, Filter-Free 18W Class-D Audio Amplifier appeared first on ELE Times.

Infineon Technologies AG has introduced the world’s first gallium nitride power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the power stage design and reduces BOM cost.

In hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage of GaN devices. This gets worse with long controller dead-times, resulting in lower efficiency than targeted. Until now, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times via their controllers. All of which is extra effort, time and cost. The new CoolGaN Transistor G5 from Infineon significantly reduces these challenges by offering a GaN transistor with an integrated Schottky diode appropriate for use in server and telecom IBCs, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power PSUs, and motor drives.

“As gallium nitride technology becomes increasingly widespread in power designs, Infineon recognizes the need for continuous improvement and enhancement to meet the evolving demands of customers”, says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line, “The CoolGaN Transistor G5 with Schottky diode exemplifies Infineon’s dedication to an accelerated innovation-to-customer approach to further push the boundaries of what is possible with wide-bandgap semiconductor materials.“

GaN transistor reverse conduction voltage (VRC) is dependent on the threshold voltage (VTH) and the OFF-state gate bias (VGS) due to the lack of body diode. Moreover, the VTH of a GaN transistor is typically higher than the turn-on voltage of a silicon diode leading to a disadvantage during the reverse conduction operation, also known as third quadrant. Hence, with this new CoolGaN Transistor, reverse conduction losses are lower, compatibility with a wider range of high-side gate drivers, and with deadtime relaxed, there is broader controller compatibility resulting in simpler design.

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package.

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