ELE Times

• Reduces Radio Frequency (RF) device modeling time from days to hours
• Automated Python workflows streamline design processes
• Accelerates predictive design of chiplet interconnects

Keysight Technologies, Inc. has introduced its new Electronic Design Automation (EDA) software portfolio to transform how engineers address the demands of next-generation technologies. As the electronics industry races to develop advanced solutions for 5G/6G and data center applications, Keysight’s suite of EDA tools leverages AI, machine learning (ML), and Python integrations to dramatically reduce design time for complex RF and chiplet products.

Keysight’s EDA 2025 software addresses critical challenges in the development lifecycle by enhancing data manipulation, integration, and control of best-in-class simulators, allowing engineers to build efficient workflows seamlessly across multiple tools. AI-enhanced workflows and high-performance computing further reduce the time-to-insight, enabling engineers to move from simulation to verification and compliance with greater confidence. For simulating fast digital interconnects, the software is equipped with end-to-end component models and measurements that conform to digital standards, providing an efficient and high-accuracy digital twin for complex digital electronic design challenges.

Core benefits of the EDA 2025 software portfolio include: 

• RF Circuit Design: Accelerate RF design cycles through open, automatable workflows featuring Python integration and multi-domain simulation. Additionally, the Python toolkit enables engineers to quickly consolidate measured load pull data from various files and formats into a single, cohesive dataset to train fast AI/ML models.
• High-speed Digital Design: Create precise digital twins for complex standard-specific SerDes designs, including Universal Chiplet Interconnect Express  (UCIe) chiplets, memory, USB, and PCIe, with the Advanced Design System (ADS) 2025 release.
• Device Modeling and Characterization: Reduce model re-centring time by 10X through AI/ML capabilities in the IC-CAP 2025 release, while Python integrations streamline and automate the modelling process.

Nilesh Kamdar, EDA Design & Verification General Manager at Keysight, said, “AI is transforming how engineers approach complex design challenges. Automating traditionally time-intensive tasks enables engineers to focus on innovation rather than repetitive refinements, resulting in real productivity gains. The foundation for the practical application of AI and ML is first having an open, interoperable workflow and then providing turn-key solutions tuned for specific applications. It’s a fascinating time, and AI and ML will undoubtedly be a huge driver of design innovation in the future.”

Stephen Slater, Director of Product Management at Keysight, said, “With this release, engineers can easily import data from measurements or swept simulations to train neural network models, which then execute very quickly in subsequent simulations. This unlocks new possibilities for abstracting and co-optimizing large parts of the RF design together, dramatically accelerating the development process.”

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New Multiplexed Registered Clock Driver, Multiplexed Data Buffer and PMIC Enable Next-Generation MRDIMM Speeds up to 12,800 Mega Transfers per Second for AI and High-Performance Compute Applications

The post Renesas Introduces Industry’s First Complete Memory Interface Chipset Solutions for Second-Generation DDR5 Server MRDIMMs appeared first on ELE Times.

STMicroelectronics has introduced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, delivering breakthroughs in power efficiency, density, and robustness for automotive and industrial applications. Designed to optimize EV traction inverters, the technology enhances energy efficiency and performance in both 400V and 800V platforms, driving the adoption of more affordable and sustainable electric vehicles. Additionally, it addresses critical needs in renewable energy, industrial motor drives, and data centers, reflecting ST’s commitment to advancing electric mobility and industrial efficiency through innovation and a vertically integrated manufacturing strategy.

Gianfranco Dimarco, Chief of Staff and Marketing Communication Manager Power & Discrete at STMicroelectronics

 

Rashi Bajpai, Sub-Editor at ELE Times, engaged with Gianfranco Dimarco, Chief of Staff and Marketing Communication Manager Power & Discrete at STMicroelectronics, to explore emerging SiC MOSFET technology.

 

 

 

 

ELE Times: What are the key advantages of the new 750V and 1200V SiC MOSFET devices for mid-size and compact EVs, and how will they contribute to making electric vehicles more affordable and accessible?

Gianfranco Dimarco:  STMicroelectronics’ new 750V and 1200V SiC MOSFET devices offer significant advancements for mid-size and compact electric vehicles, enhancing efficiency, reducing size and weight, increasing range, and enabling faster charging. The improved efficiency stems from SiC MOSFETs’ ability to minimize switching losses, significantly reducing energy waste during driving. Additionally, the compact and lightweight design of these components optimizes space utilization, boosting vehicle performance and extending the distance covered on a single charge. Their higher power capacity also facilitates faster charging, making electric vehicles more practical for daily use. Together, these innovations lower production costs, accelerating the adoption of green technologies in the automotive industry.

ELE Times: Beyond EV traction inverters, how does the Generation 4 SiC technology enhance the performance of high-power industrial applications, such as solar inverters, energy storage systems, and data center power supply units?

Gianfranco Dimarco: STMicroelectronics’ Generation 4 SiC technology not only advances EV traction inverters but also plays a crucial role in enhancing high-power industrial applications like solar inverters, energy storage systems, and data center power supply units. Solar inverters benefit from increased efficiency and higher power density, resulting in better energy conversion and more reliable solar power systems.

Energy storage systems also leverage SiC devices for greater durability and efficiency, making them ideal for long-term use, particularly in grid balancing and hybrid power systems with renewables. In data centers, SiC technology ensures stable, efficient power delivery, preventing disruptions in critical operations. These advancements underscore the growing importance of SiC technology in modern high-power industrial applications, significantly improving both efficiency and reliability across various sectors.

ELE Times: With STMicroelectronics’ vertically integrated manufacturing strategy, how does the company plan to ensure a resilient supply chain for SiC components to meet growing global demand, especially for automotive and industrial markets?

Gianfranco Dimarco:  STMicroelectronics ensures a resilient supply chain for SiC components through its vertically integrated manufacturing strategy. The company is investing in facilities like the Silicon Carbide Campus in Catania, a fully vertically integrated SiC substrate manufacturing facility, which is expected to start production in 2026. This approach allows STMicroelectronics to control the entire production process, from raw materials to finished components, ensuring consistent quality and supply. Additionally, strategic investments to start the migration from 150mm to 200mm for SiC, further enhance manufacturing efficiencies and scalability. By vertically integrating and expanding its manufacturing footprint, STMicroelectronics is well-positioned to meet the growing global demand for SiC components, especially in the automotive and industrial markets.

ELE Times: Can you provide specific performance metrics or benchmarks that demonstrate the improvements in efficiency, power density, and robustness of the Generation 4 SiC MOSFETs compared to previous generations or silicon-based alternatives?

Gianfranco Dimarco: The 4th generation SiC MOSFETs feature several key advancements over the previous generation:

• Faster Switching Speeds: this results in lower switching losses, which is crucial for high-frequency applications, enabling more compact and efficient power converters.
• Lower On-Resistance (RDS(on)): significantly reduced on-resistance minimizes conduction losses and enhances overall system efficiency.
• Enhanced Robustness: improved performance in Dynamic Reverse Bias (DRB) conditions, exceeding the AQG324 automotive standard, ensuring reliable operation under harsh conditions.
• Smaller Die Size: the average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an RDS(on) at 25 degrees Celsius. This allows for more compact power converter designs, saving valuable space and reducing system costs.

ELE Times: How does STMicroelectronics’ vertically integrated manufacturing strategy contribute to its sustainability goals, and what specific initiatives are in place to ensure environmentally friendly production processes for these new SiC devices?

Gianfranco Dimarco:  Through our vertically integrated manufacturing strategy we maintain full control over the entire production chain, from raw materials to finished products, and all initiatives are aligned with our sustainability strategy and our sustainable manufacturing commitment, in terms of energy consumption and greenhouse gas emissions, air, and water quality.

All these initiatives. ST Sustainability Report 2024

ELE Times: What can you share about the timeline and expected features of the forthcoming fifth-generation SiC power devices? How does the planned radical innovation differ from current technologies in terms of performance and application?

Gianfranco Dimarco:  The main goals for the 5th generation of SiC MOSFET include achieving higher power density, further reducing on-resistance (RDS(on)), and improving thermal performance. These advancements aim to meet the increasing demands of high-power applications in automotive, industrial, and renewable energy sectors. We will share more details on Gen5 and the planned radical new technology at the appropriate time.

ELE Times: Which leading EV manufacturers are currently collaborating with STMicroelectronics to implement the Generation 4 SiC technology into their vehicles, and what feedback have they provided regarding the anticipated performance improvements?

Gianfranco Dimarco:  Leading EV manufacturers and Tier 1s are engaged with ST to integrate Generation 4 SiC technology into their vehicles and powertrain solutions. We will share more details on our customers at the appropriate time.

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Renesas Electronics Corporation has launched its latest innovation in the automotive semiconductor space: the fifth-generation R-Car X5H system-on-chip (SoC). Designed with 3-nanometer (nm) process technology, the R-Car X5H represents the industry’s first automotive multi-domain SoC built on such an advanced node. This SoC is set to redefine the capabilities of centralized electronic/electrical (E/E) architecture, supporting a range of automotive functions, from advanced driver assistance systems (ADAS) to in-vehicle infotainment (IVI) and gateway applications, all within a single chip.

The R-Car X5H SoC brings unprecedented levels of integration and performance, addressing the growing demand for efficient, powerful, and flexible compute solutions in software-defined vehicles (SDVs). With hardware-based isolation, chiplet extension capability, and extensive AI and graphics processing power, this new SoC series offers automotive original equipment manufacturers (OEMs) and Tier-1 suppliers a comprehensive platform for tackling the complexity of modern vehicle design and functionality.

Unmatched Processing Power and Efficiency

The R-Car X5H delivers AI acceleration of up to 400 TOPS (trillion operations per second) and GPU performance up to 4 TFLOPS, ensuring the SoC can handle demanding tasks in automated driving and infotainment. Featuring 32 Arm Cortex-A720AE CPU cores and six Arm Cortex-R52 dual lockstep CPU cores, this SoC achieves over 1,000K DMIPS for applications and more than 60K DMIPS for real-time processing. Manufactured using Taiwan Semiconductor Manufacturing Company’s (TSMC) 3-nm automotive-grade process, the SoC achieves 30-35% lower power consumption than its 5-nm counterparts. This significant efficiency enhancement not only lowers overall system costs but also extends vehicle range by reducing the need for additional cooling.

Chiplet Extensions for Enhanced Flexibility

A unique feature of the R-Car X5H is its support for chiplet extensions, allowing OEMs to add AI and graphics processing power as needed. Through the Universal Chiplet Interconnect Express (UCle), the SoC can integrate seamlessly with external processors, enabling AI performance scaling up to three or four times the native 400 TOPS. This flexibility provides OEMs and Tier-1 suppliers with customizable options to meet evolving vehicle demands, offering scalability for future performance upgrades across diverse vehicle platforms.

Robust Security with Mixed-Criticality Processing

In the automotive industry, safety remains paramount. The R-Car X5H uses hardware-based Freedom from Interference (FFI) technology to securely isolate critical safety functions, such as brake-by-wire, from other non-critical operations. This mixed-criticality processing enables secure, independent domains for safety-critical tasks, preventing failures from impacting vital vehicle functions. Coupled with real-time Quality of Service (QoS) management, the SoC dynamically prioritizes processing tasks to ensure optimal performance under varied conditions.

The Path Forward for Software-Defined Vehicles

As part of Renesas’ R-Car Gen 5 family, the R-Car X5H is designed to address the requirements of the SDV market. By centralizing processing, this SoC streamlines vehicle electronic systems, supporting cross-domain applications like ADAS, IVI, and body control. Renesas’ new R-Car Open Access (RoX) platform provides a development environment with essential hardware, operating systems, and tools for seamless SDV development. This platform accelerates development and enables continuous software updates, critical in the SDV era.

A Vision for Automotive Innovation

The R-Car X5H’s impact on automotive technology is underscored by Asif Anwar, Executive Director of Automotive Market Analysis at TechInsights, who notes that the shift to SDVs will drive the market for high-performance compute SoCs. With its advanced 3-nm process, Renesas’ new SoC enables OEMs to meet power and performance demands across vehicle platforms, enhancing the integration of critical features within zonal and centralized controllers.

Renesas is showcasing the R-Car Gen 5 platform at electronica 2024 in Munich, where the development environment will be demonstrated. This advancement in automotive compute technology paves the way for a new generation of vehicles defined by powerful, efficient, and adaptable SoCs.

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In the fast-evolving landscape of AI servers, telecom infrastructure, and battery management systems (BMS), reliable and efficient power management is critical. Infineon Technologies AG has unveiled the OptiMOS 5 Linear FET 2, a next-generation MOSFET engineered to address the complex demands of safe hot-swap operation and battery protection.

This advanced device bridges the gap between the low RDS(on) performance of trench MOSFETs and the robust safe operating area (SOA) of classic planar MOSFETs. By balancing these characteristics, the OptiMOS 5 Linear FET 2 ensures enhanced reliability in high-power applications.

Key Features and Benefits

1. Robust Safe Operating Area (SOA):
The OptiMOS 5 Linear FET 2 offers a 12x higher SOA at 54 V for 10 ms and a 3.5x improvement at 100 µs compared to standard OptiMOS 5 MOSFETs with similar RDS(on). These advancements are crucial for handling high inrush currents during hot-swapping in AI servers and telecom systems.

2. Low RDS(on):
The device minimizes operational losses, boosting energy efficiency. This is particularly significant in applications requiring long-term reliability, such as data centers and telecom infrastructures.

3. Improved Current Sharing for BMS Applications:
Optimized transfer characteristics enable precise current distribution among parallel MOSFETs, a critical factor in battery protection scenarios like short-circuit events. This ensures system reliability and simplifies design.

4. Reduced Component Count and Cost:
The enhanced SOA and current-sharing capabilities allow for up to a 60% reduction in components in designs driven by short-circuit current requirements. This reduction translates into lower bill-of-material (BOM) costs, improved design flexibility, and higher power density.

5. Versatile Packaging:
Available in a TO-leadless package (TOLL), the device supports a broader range of applications, offering designers the flexibility to create compact, high-density solutions.

Applications

The OptiMOS 5 Linear FET 2 is optimized for diverse applications requiring robust hot-swap and battery protection capabilities, including:
– AI servers and telecom systems, where safe hot-swapping ensures operational continuity.
– Battery management systems (BMS): Protects batteries from high inrush currents and short circuits, ensuring system longevity and safety.
– Battery-powered devices and tools, such as power tools, e-bikes, and e-scooters, where reliability and efficiency are paramount.
– Industrial applications, including forklifts and battery backup units, where energy efficiency drives operational savings.

Advancements Over Previous Generations

Compared to its predecessor, the OptiMOS Linear FET, the OptiMOS 5 Linear FET 2 delivers significant improvements in SOA at elevated temperatures, reduced gate leakage, and a wider range of packages. These enhancements enable more MOSFETs to be connected in parallel, increasing design flexibility and reducing overall system costs.

Supporting the Future of Power Electronics

Infineon’s OptiMOS 5 Linear FET 2 exemplifies the company’s commitment to providing cutting-edge solutions for power electronics. By enabling safe hot-swap operation and robust battery protection, this MOSFET addresses critical challenges in high-power applications. Its superior performance, cost efficiency, and versatility position it as a key enabler for future advancements in energy-efficient, high-reliability systems.

With its ability to meet the demanding requirements of modern applications, the OptiMOS 5 Linear FET 2 sets a new benchmark for power MOSFETs, paving the way for more efficient and reliable power systems.

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Achieves approx. 1.3 times the creepage distance compared to standard products.

ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models – SCS2xxxNHR – for automotive applications such as onboard chargers (OBCs), with plans to  deploy eight models – SCS2xxxN – for industrial equipment such as FA devices and PV inverters in December 2024.

The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.

As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.

The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications.  Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.

Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.

Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.

Terminology

Creepage Distance

The shortest distance between two conductive elements (terminals) along the surface of the device package. In semiconductor design, insulation measures with such creepage and clearance distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.

Tracking (Creepage Discharge)

A phenomenon where discharge occurs along the surface of the package (insulator) when high voltage is applied to the conductive terminals. This can create an unintended conductive path between patterns, potentially leading to dielectric breakdown of the device. Package miniaturization increases the risk of tracking by reducing creepage distance.

Resin Potting

The process of encapsulating the device body and the electrode connections between the device and circuit with resin, such as epoxy, to provide electrical insulation. This provides durability and weather resistance by protecting against water, dust, and other environmental conditions.

AEC-Q101 Automotive Reliability Standard

AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. Q101 is a standard that specifically applies to discrete semiconductor products (i.e. transistors, diodes).

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Anritsu Corporation has joined the OpenROADM Multi-Source Agreement (MSA), which defines specifications that facilitate multi-vendor interoperability for optical transmission networks. Anritsu’s participation in these efforts aims to enhance efficiency and flexibility of the optical transmission network. As Test & Measurement instrument vendor, Anritsu’s OpenROADM activities contribute to the openness and efficiency of optical transmission networks by promoting interconnect specifications and interoperability verification.

“Anritsu is thrilled to become the inaugural Test & Measurement instrument vendor in the OpenROADM MSA, comprising service providers and vendors. The OpenROADM MSA Group is committed to the open evolution of network management and vendor interoperability. We eagerly anticipate collaborating on network orchestration, which will enable us to control and monitor the quality of the entire network. Additionally, we are excited about the prospect of introducing test & measurement innovations facilitating network fault detection and causal analysis.” says Tadanori Nishikobara, Marketing Director of the Service Infrastructure Solutions Division at Anritsu Corporation.

Anritsu contributes to OpenROADM activities through test & measurement proposals and support for interoperability verification.

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• Collaboration enables FieldFox handheld analyzers to support up to 170 GHz, offering a rugged and lightweight portable solution for millimeter-wave signal analysis
• Provides in field-testing capabilities for aerospace and defense applications reducing development time

Keysight Technologies, Inc. has expanded the frequency range of its FieldFox handheld signal analyzers, offering up to 170 GHz support for millimeter-wave (mmWave) signal analysis. Through a collaboration with Virginia Diodes Inc. (VDI), Keysight’s A- and B-Series FieldFox handheld analyzers with 18 GHz or higher, can be paired with VDI PSAX frequency extenders to cover sub-THz frequency range.

Field based engineers need precise mmWave measurements to advance modern wireless communications and radar systems. This is critical when it comes to 5G, 6G, aerospace and defense and automotive radar transmission/receiving tests. However, mmWave signals are highly sensitive to obstacles, weather conditions, and interference. Understanding their propagation characteristics through precise measurements helps engineers design more efficient networks and radar systems, improving coverage, and enhancing reliability.

To gain this insight, traditional tools typically include large desktop signal analyzers and generators, which are often very expensive and cumbersome for field measurement use cases. The Keysight FieldFox addresses this issue, enabling mmWave measurements in a lightweight portable solution, when paired with VDI’s PSAX frequency extender modules. In addition, engineers can opt for the FieldFox equipped with the downloadable Option 357 pulse generator, which can be paired with a PSGX module from VDI, to also offer a mmWave signal generation solution up to 170 GHz. This enables users to obtain accurate mmWave measurements in a simple, easy to use and rugged solution.

Key benefits of Keysight’s FieldFox combined with VDI frequency extender modules include:

• Expanded frequency coverage: Expanding the FieldFox’s frequency coverage from as low as 18 GHz, depending on models, up to 170 GHz for either signal analysis or generation.
• Optimized performance at the mmWave range: Supporting in-band signal analysis with selection of spectrum analyzer mode, IQ analyzer mode, or real-time spectrum analyzer (RTSA) mode with extraordinary sensitivity of -155 dBm/Hz typical value.
• Cost efficiency: Compared to traditional mmWave signal analysis and generation solutions, the combination of Keysight FieldFox and VDI frequency extenders reduces costs by half or more.
• Portable and convenient testing: Weighing approximately less than 4 kg in total, the combination of Keysight FieldFox and VDI frequency extenders makes the mmWave field testing much more feasible and convenient for both field and lab environment.

Dr. Thomas W. Crowe, CEO of VDI, said: “VDI manufactures state-of-the-art test and measurement equipment for mmWave and THz applications, including vector network analyzer, spectrum analyzer, and signal generator extension modules. These products enhance the capabilities of high-performance microwave measurement tools by extending them to higher frequencies. Through our collaboration with Keysight, VDI is excited to provide frequency extenders for the FieldFox handheld analyzers, offering customers lightweight solutions for both signal analysis and generation in the mmWave range, with exceptional signal quality and measurement integrity.”

Vince Nguyen, Vice President and General Manager, Aerospace, Defense, and Government Solution Group at Keysight, said: “The aerospace, defense, and commercial sectors lack a portable solution which can provide accurate mmWave measurements. As customers explore innovations they need access to higher frequencies in the radio spectrum, including mmWave. Working with VDI, we’ve developed a solution that is easy to test signal analysis and generation in the field as well as in the laboratory.”

Keysight’s FieldFox combined with VDI extenders will be showcased for the first time at the Keysight booth (Hall A3, Stand 506) at electronica 2024, the world’s leading trade fair and conference for electronics, from November 12 to 15, 2024.

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India’s premier expo, Light + LED Expo India 2024, is set to showcase advanced products in LED and intelligent lighting solutions from 21st to 23rd November 2024 at Yashobhoomi (IICC), Dwarka, Delhi. With 240+ exhibitors from six countries, the B2B event will present innovative solutions for homes, high rises, architecture, infrastructure, and everything in between.

With LED light emerging as a powerful catalyst in India’s energy efficiency journey, its applications have spread from households and industrial spaces to more complex and customised needs for architecture and interior design, urban infrastructure and smart city projects. Government-backed initiatives like Unnat Jyoti by Affordable LEDs for All and LED Street Lighting National Programme (SLNP), gave a substantial boost to LED adoption in India while saving costs and energy with environmental benefits. Besides this, the growth of the semiconductor ecosystem in India will revolutionise LED manufacturing, boost domestic production, achieve energy efficiency and contribute to positioning India as a global manufacturing hub for semiconductors and diverse lighting products.

Bringing together India’s lighting and LED ecosystem, the 29th edition of Light + LED Expo India will feature 240+ exhibitors and about 1,000+ brands showcasing their products, across a gross area of 14,000 sqm at Yashobhoomi, Delhi, Dwarka. Taking the expo to a whole new level, this year the show will feature 126 new exhibitors and has more participation from lighting automation companies than the previous editions, enhancing the solutions portfolio. Besides India, the expo will present participation from six countries including China, Finland, Germany, Italy, Taiwan and the UAE. Participants include brands like BAG, Calcom, Caterlux, JN Lighting, Kevin Electrochem, Lumens Technologies, Optiks Mechatronics, Power Pallazo, Talenteq, Tinge, Uniglobus, Zylos and many other prestigious names.

Ahead of the show, Shri Piyush Goyal, Hon’ble Minister of Commerce and Industry, Government of India, expressed his thoughts: “The Government of India has undertaken collaborative initiatives to establish a strong LED ecosystem in India. Initiatives like the Unnat Jyoti by Affordable LEDs for All (UJALA) and LED Street Lighting National Programme (SLNP) have significantly bolstered the adoption of energy-efficient lighting solutions across the nation, leading to widespread cost savings, reduced energy consumption and environmental benefits. I am hopeful that this expo and summit will serve as an ideal platform for stakeholders to come together, exchange ideas, showcase advancements and further contribute to the growth and sustainability of the LED industry in India.”

The upcoming event will present dynamic workshops and expert-led sessions, a certification workshop and a conference. The knowledge sessions have been planned in association with the Illuminating Engineering Society (IES), Women in Lighting (WIL), Lighting Designers Association of India (LiDAI) and Electric Component Manufacturers’ Association (ELCOMA). Attendees will explore the innovative applications of lighting technology within India’s cultural landscape, covering topics such as the role of lighting in architecture, the future of entertainment lighting, and advancements in connected lighting systems. The sessions will also address the creative potential of drone light shows, smart lighting solutions, human-centric designs, and India’s emergence as a global lighting hub. Key discussions on ‘circadian lighting’ and the evolving language of lighting design promise attendees’ valuable insights into the industry’s latest trends and technologies.

Mr Parag Bhatnagar, President, of the Electric Lamp and Component Manufacturers Association of India (ELCOMA) commented: “In the last few years there were some disruptions because of the technology changes, however, there are many opportunities as India is growing. You look at any segment whether it is infrastructure or modern office space which is growing by 30% or even the recent PLI scheme of the government – the CAPEX cycle is triggered and there is growth in the industry. There is an opportunity to upgrade the industry. I think Light + LED Expo India is a very prominent platform where the entire lighting fraternity will come together and there will be knowledge sharing around government policies, standards and innovation and especially, the new initiatives around lighting design. I invite the entire lighting fraternity and all ELCOMA members to Light + LED Expo India taking place from 21 – 23 November 2024 at Yashobhoomi (IICC), Dwarka, Delhi.”

What makes the expo more relevant is the fact that the Indian LED lighting industry in 2023 stood at USD 4.2 billion which is expected to reach USD 23.2 Billion by 2032, growing at a rate of 20.91% during 2023-2032, according to a report from Research and Markets. Mr Raj Manek, Executive Director and Board Member, Messe Frankfurt Asia Holdings Ltd, shared: “According to leading industry research companies, the LED lighting industry is expected to grow about five-fold by 2032. At this juncture, the Light + LED Expo India will exhibit an array of products and solutions before the industry, with new launches that will take place at the show.  Entering the 29th edition, the expo has received a great response from the participating companies ready to display an advanced showcase that will aid in addressing the evolving needs of the Indian landscape. I feel proud that the show highlights the growth of India’s lighting and LED industry with an emphasis on sustainability in the segment.”

The exhibition has garnered strong support from India’s leading industry associations and government bodies such as Ministry of Electronic & Information Technology (MeitY), Ministry of Commerce & Industry, Energy Efficiency Services Limited (EESL) Ministry of Power, LiDAI (Lighting Designers Association of India), CREDAI-MCHI, Council of Architecture (CoA), Luminaire Accessories Components Manufacturers Association (LACMA), Indian Building Congress (IBC), Solar Energy Society of India (SESI), Bombay Suburban Electric Supply (BSES), The Calcutta Electric Traders Association and the Secunderabad Electric Traders Association.

The show is organised by Messe Frankfurt Trade Fairs India Pvt Ltd in association with ELCOMA. Light + LED Expo India is part of Messe Frankfurt’s Light + Building Technology fair portfolio, which is headlined by the biennial Light + Building event in Frankfurt, Germany.

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Highly integrated biosensor device combines input channel for cardio and neurological sensing with motion tracking and embedded AI core

Demonstration to take place at Electronica 2024, Munich, November 12-15

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has introduced a new bio-sensing chip for the next generations of healthcare wearables like smart watches, sports bands, connected rings, or smart glasses. The ST1VAFE3BX chip combines a high-accuracy biopotential input with ST’s proven inertial sensing and AI core, which performs activity detection in the chip to ensure faster performance with lower power consumption.

“Wearable electronics is the critical enabling technology for the upsurge in individual health awareness and fitness. Today, everyone can have heart-rate monitoring, activity tracking, and geographical location on their wrist,” said Simone Ferri, APMS Group VP, MEMS Sub-Group General Manager at STMicroelectronics. “Our latest biosensor chip now raises the game in wearables, delivering motion and body-signal sensing in an ultra-compact form-factor with frugal power budget.”

Analysts at Yole Development see opportunities for wearable monitors transcending the general wellness market, including consumer healthcare devices that are approved by health organizations and available over the counter. By creating a complete precision sensor input in silicon, ST’s chip-design experts are facilitating innovation in all segments, with advanced capabilities such as heart-rate variability, cognitive function, and mental state.

The ST1VAFE3BX provides opportunities to extend wearable applications beyond the wrist to other locations on the body, such as intelligent patches for lifestyle or medical monitoring purposes. ST customers BM Innovations GmbH (BMI) and Pison are working at the frontiers in this sector and have quickly adopted the new sensor to drive new-product development.

BMI is an electronic design contracting company experienced in wireless sensing and with an extensive portfolio of projects including several leading-edge heart rate and performance monitoring systems. “ST’s new biosensor has enabled us to develop the next generation of precise athlete performance monitoring systems including ECG analysis in a chest band or a small patch,” said Richard Mayerhofer, Managing Director BM innovations GmbH. “Combining the analog signal from the vAFE with motion data from the acceleration sensor within a compact single package facilitates precise and context-aware data analysis. And with additional support for our AI algorithms directly on the sensor, this is exactly what we have been looking for.”

David Cipoletta, CTO of Pison, a developer focusing on advanced technologies to enhance health and human potential, added, “ST’s new biosensor stands out as a great solution for smartwatch gesture recognition, cognitive performance, and neurological health. Leveraging this advancement, we have significantly enhanced the functionality and user experience of our wearable devices.”

The ST1VAFE3BX is in production now in a 2mm x 2mm 12-lead LGA package and available from the eSTore (free samples available) and distributors from $1.50 for orders of 1000 units.

Visitors to Electronica 2024, the major industry trade event happening in Munich November 12-15, can see the ST1VAFE3BX in a sensing technologies demonstration at the ST booth, Hall C3 101. More information is available online at www.st.com/biosensors

Further technical information

The analog front-end circuits for biopotential sensors are difficult to design and subject to unpredictable effects such as skin preparation and the position of electrodes attached to the body. The ST1VAFE3BX provides a complete vertical analog front end (vAFE) that simplifies the detection of different types of vital signs that can indicate physical or emotional state.

Manufacturers of wellness and healthcare devices can thus extend their product ranges to include functionality such as electrocardiography (ECG), electroencephalography (EEG), seismocardiography (SCG), and electroneurography (ENG). This can drive the emergence of new devices that are affordable, easy to use, and reliably indicate health status or physiological responses to events such as stress or excitement. The future could contain a greater diversity of wearable devices that can contribute towards enhanced healthcare, fitness, and self-awareness.

Bringing this precision front end on-chip, the ST1VAFE3BX is building on ST’s established competencies in MEMS (microelectromechanical systems) devices by integrating an accelerometer for inertial sensing. The accelerometer provides information about the wearer’s movement, which is synchronized with the biopotential sensing to help the application infer any link between measured signals and physical activity.

The ST1VAFE3BX also integrates ST’s machine-learning core (MLC) and finite state machine (FSM) that enable product designers to implement simple decision trees for neural processing on the chip. These AI skills let the sensor handle functions such as activity detection autonomously, offloading the main host CPU to accelerate system responses and minimize power consumption. In this way, ST’s sensors let smart devices provide more sophisticated functions and operate for longer between battery charging, enhancing usability. ST also provides software tools like MEMS Studio in the ST Edge AI Suite dedicated to helping designers unleash the maximum performance from the ST1VAFE3BX, including tools for configuring decision trees in the MLC.

The ST1VAFE3BX’s bio-detection signal channel comprises the vAFE with programmable gain and 12-bit ADC resolution. The maximum output data rate of 3200Hz is suitable for a wide variety of biopotential measurements to quantify heart, brain, and muscular activity.

The device is powered from a supply voltage in the range 1.62V to 3.6V and has typical operating current of just 50µA, which can be cut to just 2.2µA in power-saving mode.

The integrated low-noise accelerometer has programmable full-scale range from ±2g to ±16g.

In addition to the machine-learning core and programmable finite state machine, which can provide functionality such as activity detection, the ST1VAFE3BX implements advanced pedometer, step detector, and step counting functions.

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Taking place from December 10–13, MASTERs offers over 50 technical sessions for embedded control engineers

Microchip Technology has announced that registration is now open for its signature MASTERs Conference, the premier technical training event for embedded control engineers. The 17th Annual India MASTERs Conference returns to an in-person format and will take place at the Sheraton Grand Bangalore Hotel at Brigade Gateway from December 10–13, 2024.

Commonplace in the semiconductor industry is the use of acronyms and “MASTERs” is no exception. It stands for Microchip Annual Strategic Technical Exchange and Review. The conference strives to deliver advanced technical learning sessions that are taught by application and design engineers to foster a synergistic engineer-to-engineer experience.

The sessions at MASTERs are curated for engineers at all levels of experience and specialties and cover an array of embedded control topics including analog, functional safety, IoT, clock and timing, FPGA solutions and much more. The conference will feature 51 technical sessions of which 22 are hands-on workshops as well as technology showcase sessions for attendees to explore Microchip’s development tools. A highlight of this year’s MASTERs Conference is the networking dinner on December 11, which will feature a keynote by Joe Krawczyk, Microchip’s senior corporate vice president of global sales.

“We are delighted for the long-awaited return of MASTERs and look forward to reconnecting with existing clients and meeting new attendees,” said Edward Han, Microchip’s vice president of Asia Pacific sales. “This year marks the 17th annual India conference and we are proud of the legacy we have built over the years. Microchip strives to inspire and shape the engineers of tomorrow and we hope attendees will leave the conference with a rich and rewarding learning experience.”

Throughout the MASTERs Conference, networking sessions will be available with Microchip engineers at the Ask the Experts booths. These networking sessions provide attendees with the opportunity to meet with Microchip experts to learn about available tools and are given mini lessons on how to use them to fast-track the development of their applications.

MASTERs Registration and Pricing Information

Registration pricing is all inclusive at Rs. 12,000 and includes entry to the conference courses, meals and access to all class materials. Deadline to register is November 26, 2024.

For more information and to register, visit the conference web page.

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Contributes to higher efficiency in automotive electric compressors and inverters for industrial equipment

ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading* low loss characteristics with high short-circuit resistance. This makes the devices ideal for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models – RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR – in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants – SG84xxWN – with plans to further expand the lineup in the future.

The increasing use of higher voltages in automotive systems and industrial equipment has led to a growing demand for power devices capable of handling high voltages in applications such as vehicle electric compressors, HV heaters, and inverters for industrial equipment. At the same time, there is a strong push for high efficiency power devices to improve energy conservation, simplified cooling mechanisms, and smaller form factors for a decarbonized society. Automotive electrical components must also comply with automotive reliability standards, while power devices for inverter and heater circuits are required to provide current interruption capabilities during short circuits, necessitating high short-circuit tolerance.

In response, ROHM redesigned the device structure and adopted an appropriate package to develop new 4th Generation IGBTs suitable for high voltage by delivering industry-low loss characteristics with superior short-circuit tolerance. These devices achieve an industry-leading* short-circuit withstand time of 10µs (Tj=25°C) together with low switching and conduction losses while maintaining a high withstand voltage of 1200V and meeting automotive standards by reviewing the device structure, including the peripheral design. At the same time, the new TO-247-4L package products, which feature 4 terminals, can accommodate an effective voltage of 1100V in a ‘Pollution Degree 2 environment’ by ensuring adequate creepage distance between pins. This enables support for higher voltage applications than conventional products.

Implementing creepage distance measures on the device side alleviates the design burden for manufacturers. On top, the TO-247-4L package achieves high-speed switching by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products – contributing to higher efficiency in drive applications.

ROHM will continue to expand its lineup of high-performance IGBTs that contribute to greater miniaturization and high efficiency drive in automotive and industrial equipment applications.

Terminology

AEC-Q101 Automotive Reliability Standard

AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. AEC-Q101 is a standard that specifically applies to discrete semiconductor products (i.e. transistors, diodes).

Short-Circuit Tolerance

The time that a power device can withstand a short-circuit without being destroyed.

IGBT (Insulated Gate Bipolar Transistor)

A power transistor that combines the high-speed switching characteristics of a MOSFET with the low conduction loss of a bipolar transistor.

Creepage Distance

The shortest distance along the surface of an insulator between two conductors. In semiconductor design, insulation measures with such creepage and space distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.

Pollution Degree 2 Environment

Pollution Degree 2 corresponds to typical environments such as homes and offices where only dry, non-conductive contaminants are present. Pollution Degree is the grade of the environment that influences the determination of the spatial and creepage distances of components, classified from 1 to 4 according to the presence, amount, and condition of pollutants.

Kelvin Emitter Terminal

An emitter terminal dedicated to voltage measurement. By separating this from the emitter through which current flows, the effects of voltage drop during current flow can be minimized, allowing for fast, stable switching.

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• Collaboration aims to significantly enhance cost, energy efficiency, driver experience and vehicle range
• Companies signed supply and capacity reservations for PROFET power switches and silicon carbide (SiC) CoolSiC semiconductors

• Infineon’s scalable production capacity is ready to meet the market demand for automotive semiconductor solutions

Stellantis N.V. and Infineon Technologies AG announced that they will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.

To support this, the companies have signed major supply and capacity agreements that will serve as the foundation for the planned collaboration to develop the next generation of power architecture, including:

• Infineon’s PROFET smart power switches, which will replace traditional fuses, reduce wiring and enable Stellantis to become one of the first automakers to implement intelligent power network management.
• Silicon carbide (SiC) semiconductors, which will support Stellantis in its efforts to standardize its power modules, improve the performance and efficiency of EVs while also reducing costs.
• AURIX microcontrollers, which target the first generation of the STLA Brain zonal architecture.

Stellantis and Infineon are also in the process of extending their cooperation with the implementation of a Joint Power Lab to define the next-generation scalable and intelligent power architecture enabling Stellantis’ software-defined vehicle.

“As outlined in our strategic plan, Dare Forward 2030, we are securing the supply of crucial semiconductor solutions required to continue our transition to an electrified future leveraging innovative E/E architectures for our next-generation platforms,” said Maxime Picat, Stellantis Chief Purchasing and Supplier Quality Officer.

“Infineon is now entering a collaboration and innovation partnership with Stellantis,” said Peter Schiefer, President of Infineon’s Automotive Division. “As the world’s leading automotive semiconductor vendor, we bring our product-to-system expertise and dependable electronics to the table. Our semiconductors drive the decarbonization and digitalization of mobility. They increase the efficiency of cars and enable software-defined architectures that will significantly improve the user experience.”

With the world`s most cost-competitive SiC fab in Kulim, Malaysia, the upcoming 300-millimeter ”Smart Power Fab” in Dresden, Germany, and the joint venture with TSMC and partners (ESMC) as well as accompanying supply agreements with foundry partners, Infineon is ready to fully meet market demand for automotive semiconductor solutions. According to the market research company TechInsights, Infineon is the global number one supplier of automotive microcontrollers with a market share of about 29 percent of the global automotive microcontroller market.

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• 21-year contract for energy produced by a new solar farm in Malaysia, where ST operates a large-volume test & assembly site.
• PPA will support the 2027 carbon neutrality and 100% renewable energy sourcing targets of ST.

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announced a 21-year Power Purchase Agreement (PPA) with BKH Solar Sdn Bhd, an entity jointly established by ENGIE Renewable SEA Pte Ltd (ENGIE), a renowned global leader in low-carbon energy and services, and Conextone Energy Sdn Bhd, a rapidly emerging solar energy developer in Malaysia. The agreement will facilitate the supply of approximately 50 GWh of renewable energy annually from a new solar farm in Bukit Kayu Hitam, Kedah, Malaysia. This long-term agreement is undertaken under the Corporate Green Power Program introduced by the Malaysian Single Buyer in 2023.

Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented: “This long-term power purchasing agreement in Malaysia, ST’s first one in Asia, marks yet another important step towards ST’s goal of becoming carbon neutral in its operations (Scope 1 and 2 emissions, and partially scope 3) by 2027, including the sourcing of 100% renewable energy by 2027. PPAs will play a major role in our transition. Starting in 2025, this PPA with ENGIE will provide a significant level of renewable energy for ST’s operations in our high-volume test and assembly site in Muar, Johor, Malaysia.”

Amit Jain, Managing Director India & Southeast Asia, ENGIE, commented: “ENGIE is delighted to join forces with STMicroelectronics in the global transition towards sustainable energy solutions. By supplying approximately 50 GWh of renewable energy annually from our new solar PV 30 MW project in Malaysia, we are proudly contributing to ST’s transition towards 100% renewable sourcing. This partnership with ST demonstrates our commitment to providing green, clean and reliable energy to our clients.”

ST’s high-volume test and assembly site located in Muar, Johor, has over 4,700 employees supporting multiple technologies and products, including high reliability applications for automotive customers. ST also operates support functions out of Penang and Kuala Lumpur.

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Infineon Technologies AG has announced the launch of the AURIX TC4Dx microcontroller (MCU), the first member of the latest AURIX TC4x family. Based on 28nm technology, the AURIX TC4Dx offers increased performance and high-speed connectivity. It combines power and performance enhancements with the latest trends in virtualization, Artificial Intelligence, functional safety, cybersecurity, and networking functions paving the way for new Electric/Electronical (E/E) architectures as well as the next generation of software-defined vehicles. MCUs like the AURIX TC4Dx are crucial to control and monitor a wide variety of systems in the automobile such as vehicle motion control, Advanced Driver Assistance Systems (ADAS) and chassis.

“Microcontrollers like our new AURIX TC4Dx are the backbone of software-defined vehicles. They are essential to further improve vehicle performance, safety and comfort.” said Thomas Boehm, Senior Vice President for Microcontrollers at Infineon. “The AURIX TC4Dx will contribute to secured processing performance and efficiency, and our customers will benefit from faster time-to-market and lower total system cost.”

The AURIX TC4Dx features an advanced multi-core architecture with the new 500MHz TriCore with six cores, all with lock-steps for highest functional safety performance. With its Parallel Processing Unit (PPU), the MCU provides an innovative platform for developing embedded AI-based use cases such as motor control, battery management systems or vehicle motion control. The MCU is supported by a strong software ecosystem and includes networking accelerators to boost Ethernet and CAN communication, as well as the latest interfaces such as 5 Gbit/s Ethernet, PCIe, 10Base-T1S and CAN-XL. This increased networking throughput and connectivity gives customers the performance and flexibility needed to implement E/E architectures. Its holistic approach to functional safety meets the highest functional safety requirements according to ISO26262 ASIL-D. The AURIX TC4Dx also fulfills latest cyber security standards according to ISO/SAE21434 including post-quantum cryptography support.

Infineon at electronica 2024

At this year’s electronica in Munich, Infineon presents innovative solutions that are helping to shape an all-electric society. Visitors can explore sustainable technologies that are transforming the mobility and automotive landscape, enabling sustainable buildings and smarter living, and promoting the growth of artificial intelligence with minimal environmental impact. The company will present intelligent and energy-efficient solutions for tomorrow’s connected world from November 12 to 15 in Hall C3, Booth 502 under the motto “Driving Decarbonization and Digitalization.

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At STMicroelectronics, we are committed to positively impacting expertise, and delivering comprehensive educational programs globally through the ST Foundation. The mission is to develop, coordinate, and sponsor projects that use modern sciences and technology to promote human progress.

One of the flagship initiatives is the Digital Unify Program, an extensive educational effort active across Europe, Asia, and Africa. Since its launch in 2003, this program has trained over one million individuals across 29 countries, adapting the methods to meet the needs of various groups, including children, adults, individuals with disabilities, and the elderly.

The impact of the Digital Unify Program Pietro Fox, board member of ST Foundation The ST Foundation’s impact is not only measurable by the number of individuals trained but by the stories of transformation that come from the heart of these communities. Every course offered through the Digital Unify Program becomes a stepping stone for change, enabling people to harness the power of technology for a better tomorrow.

 

The Digital Unify Program (DU) sets up computer training centers (DU Labs) in collaboration with local partners such as schools, NGOs, local administrations, and government agencies. Currently, the program offers four free courses:

• Informatics and Computer Basics (ICB): a 20-hour computer literacy course focusing on essential skills like searching topics online, sending emails, and using word processors and spreadsheets. Shereen’s story is just one of the many examples of empowerment through education.
• Tablet for Kids (T4K): a course for children aged 9 to 13, aimed at providing an intuitive understanding of ICTs for problem-solving and personal development. Read more about what we are doing to help kids in Murshidabad, one of the most underdeveloped areas in West Bengal (India).
• Introduction to Computer Basics for Visually Impaired People (ICB4VI): created in collaboration with the University of Milan, this course makes digital skills accessible to visually impaired learners. It offers over 50 hours of training on key topics such as keyboard navigation, Microsoft Word document creation, Excel data management, email handling, and Internet navigation.

ICB certificate distribution, Morocco

• Tablet for Seniors Course (T4S): This course has a standard duration of 20 hours, during which the beneficiaries have the chance to learn basic skills like how to use the Internet, email accounts, take pictures, and more advanced tasks that can help them lead a more active and e-connected life. Read the story of Remedios in the Philippines to know more about how this course can change people’s lives.

In addition to these fundamental courses, the program remains attentive to the evolving needs of the communities it serves. The ST Foundation is always ready to develop new courses and adapt our offerings to ensure everyone has access to the digital tools they need to meet future challenges.

Creating a better future with DU local communities

The Local Communities (LC) project is a key initiative of the ST Foundation. It supports the creation of DU Labs and encourages volunteering among ST employees. The goal is to provide every citizen with the knowledge to overcome social, economic, and technological inequalities, achieving human progress and a dignified life for everyone. If you want to know more about how to connect with the ST Foundation to benefit your local community, click here.

Pietro Palella, President of the ST Foundation Our commitment to bridging the digital divide is unwavering. At the ST Foundation, we believe that access to technology is not just a privilege but a fundamental right. With the Digital Unify Program, we are reaching out to communities worldwide, providing them with  the tools and skills necessary for personal and collective growth. Expanding our reach

The ST Foundation continues to expand its reach in countries where there is a significant need to overcome social, economic, and technological inequalities.

Session one T4K course – India

In 2023, the Foundation signed a strategic collaboration agreement with the International Telecommunication Union (ITU) – a specialized agency of the United Nations responsible for issues related to information and communication technologies (ICTs) – strengthening the commitment to reducing the digital divide. This collaboration focuses on empowering marginalized communities, particularly women and youth, through digital skills development. This partnership with ITU aligns with the mission to foster digital inclusion and promote sustainable development across various regions.

In Senegal, the Foundation launched training programs for young girls and visually impaired individuals, ensuring more inclusive access to technology and education. Additionally, they conducted a Training of Trainers (ToT) program in Ghana to equip the first teachers in the country to deliver our ICB4VI course, enhancing accessibility for visually impaired learners.

ICBVI Train the Trainers course in Ghana

In India, the efforts included expanding the T4S senior citizen program, empowering women with digital literacy, and introducing the Digital Unify program in prisons, aiding rehabilitation and reintegration. The summer camps in Morocco reached 9,502 children across 29 locations, providing quality education and fostering unity among underprivileged children.

 

Patrick Dureault, Board Member managing France, donating PCs

In France, the Foundation donated nearly 1,000 computers and formed partnerships with major entities.

In Italy, they successfully promoted coding in education with a new initiative together with ACRA, encouraged digital careers, and trained volunteers to engage with students. The initiative reached schools, trained teachers, and involved volunteers, focusing on inclusion and reducing inequality.

The collaboration with Vittascience ST volunteer experimenting how to use Vittascience starting kits

The Foundation has made significant additional strides in 2023, focusing on reducing digital education disparity and enhancing program efficacy. Key projects include developing a new computational thinking and coding course using resources from Vittascience, an educational platform offering innovative teaching tools. The course aims to reinforce existing programs and pay special attention to digital education for older people

Shireen’s and Barthelemy’s journeys and the many active projects in 14 countries are just some of many recent inspiring stories highlighting the importance of providing educational opportunities to less privileged communities. These stories show how access to modern sciences and technology can promote human progress and

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Reducing Component Counts, Self-Protecting Devices Combine Energy Handling to 340 J With R25 Values to 1.5 kΩ and High Voltages to 1200 VDC

Vishay Intertechnology, Inc. has introduced a new series of inrush current limiting positive temperature coefficient (PTC) thermistors. Designed to increase performance in active charge and discharge circuits for automotive and industrial applications, Vishay BCcomponents PTCEL High Energy series devices combine maximum energy handling to 340 J — five times higher than competing devices at high ambient temperatures — with a wide range of resistance at 25 °C (R25) values and high voltage capabilities.

Featuring R25 values from 150 Ω to 1.5 k Ω, the thermistors released today enable increased efficiency and high maximum voltages of 1200 VDC. The devices offer high energy handling capabilities at higher ambient temperatures — 180 J at 85 °C and 130 J at 105 °C — allowing designers to save space and lower costs by utilizing fewer components in their circuits. With their high switching temperature and operation to +105 °C, the PTCEL High Energy series offers a heat capacity to 2.6 J/K for all resistance values.

AEC-Q200 qualified and self-protecting — with no risk of over-heating — the thermistors provide current limitation and overload protection in AC/DC and DC/DC converters; DC-Link, battery management, and emergency discharge circuits; on-board chargers; home energy storage systems; heat pumps; motor drives; and welding equipment. For these applications, the devices withstand > 100 000 inrush power cycles and are highly resilient against non-switching peak power up to 25 kW.

The PTCEL High Energy series barium titanate thermistors consist of a ceramic pellet soldered between two tinned CCS wires and coated with a UL 94 V-0 compliant high temperature silicone lacquer. The devices are available in tape on reel packaging and can be automatically handled by pick and place equipment for lower placement costs. The thermistors offer a standard leadwire pitch of 10 mm, with leadwire pitches of 5.0 mm and 7.5 mm also available. SPICE and 3D models for the RoHS-compliant devices are available.

Device Specification Table: 

Part number	PTCEL67R
R25 (W)	150 to 1500
R25 tolerance (%)	30
Max. AC voltage (VRMS)	460 to 800
Max. DC voltage (VDC)	650 to 1200
Maximum energy (J) @ 25 °C	340
Heat capacity (J/K)	2.6
Lead pitch (mm)	5.0, 7.5, 10.0

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STPOWER Studio 4.0 just became available and now supports three new topologies (1-phase full bridge, 1-phase half-bridge, and 3-phase 3-level T-NPC) to cover significantly more applications. Previously, the online simulation tool only offered a 3-phase 2-level topology for motor drivers and photovoltaic inverters, which are some of the most popular use cases. Thanks to the robustness of the underlying architecture that ST recently updated and brought to the web, we are now able to build on top of the existing platform to make STPOWER Studio more versatile and assist more engineers in designing a more comprehensive range of power stages.

What is STPOWER Studio? A unique simulator STPOWER Studio delivers extensive analyses quickly and easiily

STPOWER Studio, a component of eDesignSuite, specializes in thermo-electrical simulations. As eDesignSuite transitioned to HTML5 to enhance its user interface, STPOWER Studio benefited from the same underlying architecture, enabling more powerful simulations. It stands out in the industry as one of the few simulators capable of adjusting power losses according to the junction temperature at the moment of the simulation, providing a more accurate representation of real-world usage. Some competitors traditionally use a fixed value for the junction temperature, leading to over- or underestimated losses. Thanks to our dynamic junction temperature, users get more accurate results.

STPOWER Studio can simulate up to hundreds of seconds per step with Steady State off, which gives engineers enough time to see how their power stage would ramp up and stabilize. They can also run simulations with or without heat sinks, which will help them anticipate form factor and heat dissipation requirements. Users simply select the ST family of devices (ACEPACK or SLLIMM) and the component they will use in their design. Under Setting, designers can tweak the gate resistor values and some thermal properties. Finally, under I/O, users can adjust their mission profile by defining various steps with values such as the output power or the current level, among other things.

A design assistant

Let’s take the example of an engineer designing a large motor driver for industrial applications, an inverter for a photovoltaic converter, or an HVAC system. In our example, the motor would use a DC Link voltage of 650 V and an RMS Phase Current of 10 A. For a quick simulation, users can use Steady State ON to analyze performances after reaching a thermal steady state. Then, by choosing Steady State OFF, users can set the duration of the simulation step for a more detailed analysis. Obviously, it will require more computing power on the server and take longer to generate. However, ST reduced rendering times by a factor of 10 over the last releases of STPOWER Studio.

What’s new in STPOWER Studio 4.0? 1-phase full bridge STPOWER Studio supports heatsink sizing and monitoring data on non-testable parameters

The new version of STPOWER Studio features three new topologies. The 1-phase full bridge will fit single-phase photovoltaic converters or uninterruptible power supplies. As more residential homes and buildings increasingly rely on renewable energy, the ability to store solar energy in batteries is increasingly in demand. Hence, we wanted to ensure that engineers could more rapidly test their designs and reduce their time to market. Similarly, engineers working on an uninterruptible power supply can very quickly anticipate what their design will look like if they adopt an STPOWER device.

1 phase half bridge

Since STPOWER Studio supports a one-phase full bridge topology, it made sense to offer a one-phase half-bridge. This structure is common in DC-AC conversion for smaller solar inverters or motor drivers. Engineers also combine single-phase half-bridge topologies when designing a one-phase to three-phase converter. In fact, while the current version of the simulator focuses solely on DC-AC systems, we are evaluating the addition of DC-DC applications and will update this blog post with more information as they become available.

3-phase 3-level T-NPC Extensive analyses in STPOWER Studio

Finally, the 3-phase 3-level T-NPC (T-type Neutral Point Clamped) is increasingly popular because it improves overall efficiency by reducing switching losses thanks to a mechanism that clamps the input voltage at its halfway point. Consequently, only half of the input voltage is applied to each switch, which reduces switching losses. This creative approach greatly benefits high-power systems, such as photovoltaic inverters, power factor inverters, or motor drivers, while ensuring the overall design remains relatively small.

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Infineon Technologies AG has announced the launch of a new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, further strengthening its Gallium Nitride (GaN) portfolio. Target applications for this new product family range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers to renewable energy and motor drives in home appliances.

The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, enabling rapid redesign of existing platforms. The new devices provide improved figures of merit to ensure competitive switching performance in focus applications. Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (Eoss), up to 60 percent improved drain-source charge (Qoss) and up to 60 percent lower gate charge (Qg). Combined, these features result in excellent efficiencies in both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case.

These benefits allow the devices to operate at high frequencies with minimal power loss, resulting in superior power density. The CoolGaN Transitors 650 V G5 enable SMPS applications to be smaller and lighter or to increase the output power range in a given form factor.

The new high-voltage transistor product family offers a wide range of RDS(on) package combinations. Ten RDS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8 , TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). In the future, CoolGaN will transition to 12-inch production. This will enable Infineon to further expand its CoolGaN capacity and ensure a robust supply chain in the GaN power market, which is expected to reach $2 billion by 2029, according to Yole Group.

A demo featuring the CoolGaN Transistors 650 V G5 will be showcased at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).

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