ELE Times

• Rural Rising initiative has reached more than 350,000 individuals across Bangarpet and Mulabagilu Taluks
• New Taluk-Level Community Library launched to enhance educational access

Applied Materials India Private Limited in partnership with United Way Bengaluru (UWBe) celebrated a decade of transformative impact in the Kolar district through their flagship initiative, The Rural Rising. This milestone celebrates a journey of growth, sustainable development, and community empowerment that has reached more than 350,000 individuals across 288 villages in Bangarpet and Mulabagilu taluks.

To commemorate the occasion, a Taluk-level community library was inaugurated, reinforcing the initiative’s commitment to educational access and lifelong learning. Avi Avula, Country President of Applied Materials India and Vice President, Semiconductor Products Group, Asia, along with Rajesh Krishnan, CEO, United Way Bengaluru attended the event.

“This milestone is not just a celebration of what we’ve achieved, but a reaffirmation of what’s possible when business, community, and purpose come together”, said Avi Avula. “The Rural Rising initiative has shown us the power of sustained engagement in driving meaningful change”, he added.

A Model for Sustainable Rural Development

Launched in 2015, The Rural Rising initiative was conceived by United Way Bengaluru and implemented by Applied Materials India to address the unique needs of rural communities through a four-pillar approach: education, environment, health, and livelihood. Key achievements over the past decade include:

• Education:
  • 2,299 students mentored and supported through scholarships and enriched learning environments
  • Launch of a new community library to promote literacy and digital access
• Environment:
  • 7 lakes rejuvenated
  • 434 solar-powered streetlights installed
  • 203 tonnes of CO₂ emissions reduced annually
• Livelihoods:
  • 1,170 women, people with disabilities, and rural youth empowered with income-generating skills
  • 561 farmers supported through soil and water conservation programs
  • 8+ community water ATMs installed, benefiting over 4,000 residents
  • Improved sanitation and hygiene infrastructure across villages

“Collaboration is at the heart of the Rural Rising flagship program. By partnering with Applied Materials India, local authorities, and the community, we have made sure that local perspectives are taken into the development process, from planning to implementation. This way, we are helping them take charge of their own progress and build lasting, self-sustaining change in Kolar, said Rajesh Krishnan, CEO of United Way Bengaluru.”

Scaling the Vision Beyond Kolar

Inspired by the success in Kolar, Applied Materials India and UWBe have expanded The Rural Rising to Coimbatore (Tamil Nadu), and Khed Taluk (Pune, Maharashtra). These new chapters will build on the proven model, focusing on education, sports infrastructure, and ecological sustainability. With continued investment and collaboration with local governments, the initiative is poised to scale its impact and enable long-term, community-driven transformation across rural India.

The post Applied Materials India and United Way Bengaluru Mark 10 Years of Rural Transformation in Kolar appeared first on ELE Times.

The rapid advancement of electrification has revolutionized the energy and mobility sectors and provides decisive impulses for industry and society. Power electronics is the indispensable driver of this transformation. With the acquisition of ZES ZIMMER Electronic Systems GmbH, Rohde & Schwarz complements its broad T&M portfolio.

In the constantly changing market environment of the past few decades, ZES ZIMMER Electronic Systems GmbH has managed to achieve continuous growth through innovative solutions and products. The ZES ZIMMER Electronic Systems GmbH portfolio will contribute to expanding the market position of Rohde & Schwarz in the field of power electronics. The family owned company in Hesse with around sixty employees will be fully integrated into the Rohde & Schwarz group. The location will be retained and will continue to be used for power measurement equipment.

For Christina Geßner, Executive Vice President Test & Measurement Division, the acquisition is an important next step that contributes to the sustainable growth strategy of the global technology group: “Both Rohde & Schwarz and ZES ZIMMER Electronic Systems GmbH are privately owned companies with a long tradition. A passion for technology and innovation has always been in the DNA of both our companies. The acquisition will further strengthen our position as a relevant and reliable technology partner for our customers in the field of power measurements, create synergies and generate further growth.”

ZES ZIMMER Electronic Systems GmbH has been an established name in the power measurement market for more than 40 years and not only has a broad customer base but also a strong sales network. The privately-owned company’s exceptionally strong product portfolio supports a wide range of industry-leading use cases and applications, particularly in the electromobility, industrial electronics and renewable energy sectors. The future consolidation and bundling of expertise and portfolios represent a significant expansion of the Test & Measurement Division’s existing offering in the field of power electronics.

Dr. Conrad Zimmer, Managing Partner of ZES ZIMMER Electronics Systems GmbH, says: “Decarbonisation and electrification of various industries will have a major impact on the demand for power electronics and power measurements in the coming decades. A merger with Rohde & Schwarz will allow ZES ZIMMER to make the best use of these growth opportunities. Georg Zimmer founded the company in 1980, and over the last four decades, the employees have built a company with a passion for technology and engineering, whose products are known and appreciated worldwide. I thank our customers for their trust in the company and its products, and all our employees for their dedication and loyalty, and I believe that as a privately-owned company that thinks long term, Rohde & Schwarz will continue the success story of ZES ZIMMER.”

The complete takeover of ZES ZIMMER Electronic Systems GmbH into the Rohde & Schwarz group is an important building block in the long-term growth strategy. At the same time, Rohde & Schwarz is expanding its development capacity with the acquisition and strengthening Germany as an industrial and technological powerhouse.

The post Rohde & Schwarz acquires ZES ZIMMER Electronic Systems GmbH and expands its T&M portfolio for power electronics appeared first on ELE Times.

Designed for Permanent Contact With Variety of Liquids, AEC-Q200 Qualified Device Eliminates the Need for Costly Wire to Wire Connectors

Vishay Intertechnology, Inc. introduced a new AEC-Q200 qualified NTC immersion thermistor. Featuring a miniature design with a compact sensor tip and thin insulated wire, the Vishay BCcomponents NTCAIMM66H is ideal for the small spaces of liquid-cooled automotive systems, where it provides a fast 1.5 s response time to temperature changes.

The rugged device released consists of a miniature NTC thermistor mounted in a stainless steel 316L housing with lead (Pb)-free brass, and 0.35 mm² AWG#22 insulated lead wires with a FLR2X construction that enables a traction force higher than 30 N. These wires allow for direct crimping with automotive connectors eliminating the need for costly wire to wire connectors while the stainless-steel housing enables permanent contact with water or other liquids.

The NTCAIMM66H will be used for temperature measurement, sensing, and control in liquid-cooled automotive systems such as HEV/EV on-board chargers (OBC) and charging plugs and sockets, in addition to solar heating systems, energy storage systems, industrial drives and tools, and servers. The device can be customized with different cable and stripping lengths, gauges, and conductor plating to meet the need of specific applications, enabling Vishay customers to integrate the thermistor into their complete sensor solutions for HEV / EV thermal management systems (TMS).

The immersion sensor offers resistance at +25 °C (R25) of 10 kΩ, with tolerance of ± 2 %, and beta (B25/85) of 3984 K, with tolerance of ± 0.5 %. The device features maximum power dissipation of 100 mW and an operating temperature range of -40 °C to +125 °C.

The post Vishay Intertechnology NTC Immersion Thermistor Delivers Fast 1.5 s Response Time for Liquid-Cooled Automotive Systems appeared first on ELE Times.

Empowering Secure and Open Compute Infrastructure with Industry-Leading BMC Solutions

Nuvoton Technology Corporation announced that its latest BMC chip revision, NPCM8mnx, has been officially certified under the Open Compute Project (OCP) Security Appliance Framework Enablement (S.A.F.E.) program. This milestone underscores Nuvoton’s commitment to advancing security, transparency, and collaboration within the server and data center industry.

OCP S.A.F.E. certification affirms that Nuvoton’s NPCM8mnx BMC chip meets the highest standards of hardware and firmware security, openness, and supply chain trust. The certification process includes rigorous evaluation against OCP’s secure boot, firmware integrity, and secure recovery requirements, ensuring readiness for hyperscale deployment.

As part of the certification process, Nuvoton completed a comprehensive security audit conducted by NCC Group, an OCP-approved third-party security review provider. The audit validates the robustness of Nuvoton’s security design and implementation. The NPCM8mnx chip integrates a dedicated security enclave called the Trusted Integrated Processor (TIP). The TIP firmware implements Platform Root of Trust (pRoT) functionality and provides a secure foundation for both the BMC and the platform. TIP is provisioned during chip manufacturing by Nuvoton to embed the customer’s Secure Boot keys and a Unique Device Secret (UDS), used by the DICE (Device Identifier Composition Engine) software stack. This built-in trust anchor is key to enabling robust and scalable platform security in modern data center environments.

The OCP S.A.F.E. certification applies to the NPCM8mnx A3 revision of the TIP ROM code and Cryptography Library. This version introduces Post-Quantum Cryptography (PQC) support, including LMS (Leighton-Micali Signatures) verification for Secure Boot. The A3 ROM supports a hybrid signature scheme, combining LMS with the legacy ECDSA-384 to enhance resilience against both classical and quantum attacks during firmware authentication.

In addition to the OCP S.A.F.E. certification, the previous NPCM8mnx A2 chip revision has already achieved FIPS 140-3 certification, including:

• CMVP certificate
• CAVP listing
• Entropy Source Validation (ESV)

“We’re honored to receive OCP S.A.F.E. certification for our NPCM8mnx BMC chip,” said Uri Trichter, VP of Server Products at Nuvoton. “This validates our long-term commitment to empowering open infrastructure with trustworthy, secure, and high-performance silicon. As the ecosystem advances toward zero-trust architecture, Nuvoton is proud to contribute resilient solutions for hyperscale and enterprise deployments.”

Nuvoton is actively working toward FIPS 140-3 certification for the A3 revision as well, continuing its commitment to meeting stringent global security standards.

The post Nuvoton’s NPCM8mnx BMC Chip Achieves OCP S.A.F.E. Certification appeared first on ELE Times.

cetecom advanced has certified the test solution from Rohde & Schwarz for the verification of the NG eCall functionality. The solution is based on the CMX500 radio communication tester with the NG eCall option, which was specifically developed for the requirements of the IMS-based emergency call system.

NG eCall is the IP Multimedia Subsystem (IMS)-based development of the European eCall system. In contrast to the legacy, circuit-switched technology, NG eCall is based on packet-switched communication over 4G/5G networks. This improves not only speech and data transmission but also provides the foundation for future-proof telematics services.

The test solution from Rohde & Schwarz enables a complete end-to-end simulation of a 4G or 5G network and a Public Safety Answering Point (PSAP). It supports both IMS call setup and IP-based data transmission in accordance with the current 3GPP specifications as well as the CEN standards for NG eCall. The CMX-KA098 option has successfully completed the test scenarios for the PSAP part in accordance with the EN 17240:2024 standard – a crucial step for conformity with European requirements for NG eCall test systems.

cetecom advanced uses the solution for functional tests and protocol conformity tests as well as for the type-approval of In-Vehicle Systems (IVS) that implement NG eCall. The test environment allows for the simulation of real-world mobile network conditions and the emulation of various network scenarios a significant advantage in preparing for certifications or the market launch of new vehicle models.

“The certification of Rohde & Schwarz’ test solution is a major milestone for us,” says Thomas Reschka, Senior Technical Consultant at cetecom advanced. “With this solution, we are technologically well-equipped for the requirements of IMS-based emergency call communication and can support our customers in the development and type-approval of NG eCall systems.”

“The partnership with cetecom advanced allows us to offer innovative test solutions that meet the highest safety standards,” says Christoph Pointner, Senior Vice President Mobile Radio Testers at Rohde & Schwarz. “With our NG eCall test solution, we support automotive manufacturers in developing and implementing life-saving technologies.”

Through this collaboration, both companies aim to empower the automotive industry to ensure the rapid adoption of next-generation vehicle communications that prioritize safety.

The post cetecom advanced certifies Rohde & Schwarz test solution for the verification of Next Generation eCall functionality appeared first on ELE Times.

Designed to facilitate the continued evolution of high-frequency wireless systems in various market segments, the new DB0402 3dB 90° hybrid couplers provide repeatable high-frequency performance and continuous power handling in miniature, low-profile form factors compatible with automated assembly.

KYOCERA AVX released a new line of integrated thin film (ITF) hybrid couplers designed to facilitate the continued evolution of high-frequency wireless systems in industrial, automotive, telecommunications, and telemetry applications.

Hybrid couplers are special four-port directional couplers that split input signals into two equal-amplitude 3dB outputs whose phases are shifted by 90°. Many also support performance monitoring and inject signals without interrupting the original signal.

The new DB0402 3dB 90° hybrid couplers from KYOCERA AVX feature field-proven multilayer thin-film technology engineered to provide excellent high-frequency performance in microwave and RF bands spanning 3,000 to 4,100MHz and enable the quick adjustment of RF parameters. They also feature compact, rugged constructions that measure just 0.040” x 0.023” x 0.014” ±0.002” (L x W x H), enabling board space savings, and lead-free nickel terminations compatible with reflow, wave, vapor phase, and manual soldering techniques, enabling reliable automated assembly. Additional benefits include high power handling (1W continuous), low insertion loss (-0.5dB typical, -0.8dB max.), high isolation, exceptional amplitude and phase balance (0.6dB typical, 1.2dB max. and 2° typical, 5° max., respectively), temperature stability, linearity improvements, low parasitics, high part-to-part and lot-to-lot repeatability, excellent solderability, self-alignment during reflow, and effective heat dissipation.

The series is currently available in four frequency bands with typical performance of 3,200, 3,500, and 3,700, and 3,800MHz and is rated for 50Ω impedance and operating temperatures extending from -40°C to +85°C. It’s also compliant with International Automotive Task Force (IATF) and RoHS requirements, manufactured in ISO 9001 facilities, and packaged on tape and reel for automated assembly.

Ideal applications for the series extend throughout the industrial, automotive, telecommunications, and telemetry industries and include base stations, wireless LANs, mobile communications systems, 4G, 5G, and 6G LTE infrastructure, satellite TV receivers, global positioning systems (GPS), RF balanced amplifiers, signal distribution, heavy-duty radios, vehicle location systems, and other high-frequency wireless systems.

“The rapid evolution and expansion of 5G, SATCOM, and other high-frequency wireless technologies is fueling the evolution of enabling technologies, including millimeter wave and MIMO (multiple-input, multiple-output) antennas, which are empowered by innovative microwave and RF components, like our new 3dB, 90° hybrid couplers,” said Mohammed Abu-Naim, RF Product Manager, KYOCERA AVX – North America. “Our new hybrid couplers provide customers with space- and cost-saving solutions for maximizing repeatable, high-frequency RF performance in compact and handheld industrial, automotive, telecommunications, and telemetry applications with high power handling and wide operating frequency requirements.”

The post KYOCERA AVX Releases New 3dB Hybrid Couplers appeared first on ELE Times.

Single- and Dual-Core MCUs Combine Arm Cortex-M85 and M33 Cores with Arm Ethos-U55 NPU to Deliver Superior AI Performance up to 256 GOPs

• Unprecedented 7300+ CoreMarks with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power Consumption
• Embedded MRAM with Faster Write Speeds and Higher Endurance and Retention
• Dedicated Peripherals Optimized for Vision and Voice AI plus Real-Time Analytics
• New AI Software Framework Eases Development and Enables Easy Migration with MPUs
• Leading-Edge Security Features Ensure Data Privacy

Renesas Electronics Corporation introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm Cortex-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.

Designed for Edge/Endpoint AI

The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.

Advanced Technology

The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.

“There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”

“The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, senior vice president and general manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”

“It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”

Robust, Optimized Peripheral Set for AI

Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.

The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.

New RUHMI Framework

Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2 Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.

Advanced Security Features

The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.

Ready to Use Solutions

Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs.

Key Features of the RA8P1 MCUs

Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core

Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280×800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface

Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers

Packages: 224BGA, 289BGA

Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management

The post Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration appeared first on ELE Times.

Built on Proven SuperGaN Technology, 650-V Gen IV Plus Devices Deliver Robust Performance with Superior Thermal Efficiency and Ultra-Low Power Loss

Renesas Electronics Corporation introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.

The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.

Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS (on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.

Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.

“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”

Unique d-mode Normally-off Design for Reliability and Easy Integration

Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.

GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.

Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.

The post Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems appeared first on ELE Times.

Anritsu Corporation is proud to announce that its receiver test (SINK Test) solution for the latest DisplayPort 2.1 standard has been certified by the Video Electronics Standards Association (VESA), the international standards organization. Combining Anritsu’s Signal Quality Analyzer-R MP1900A with automation software from Granite River Labs (GRL) or Teledyne LeCroy achieves automated verification of data transmission quality and calibration.

DisplayPort 2.1 enables the digital transmission of high-definition and high-refresh-rate video, such as 8K. The standard is still being developed. Recently, the integration of the USB Type-C specifications has led to a significant expansion in the versatility of DisplayPort 2.1 and its adoption across a wide range of applications. However, a challenge facing the development of products that comply with the new standard is that manually verifying transmission signal quality and calibrating are time-consuming due to the complexity of the test equipment settings and the lengthy configuration and test procedures. This solution improves development efficiency and ensures the quality of video data transmission by automating the testing and calibration processes.

The post Anritsu Gains Certification for Latest DisplayPortTM 2.1 Video Interface Standard Testing Solution appeared first on ELE Times.

The post u-blox ZED-X20P all-band GNSS receiver enables affordable global cm-level precision, customer sampling started appeared first on ELE Times.

The new 9155-900 Series 2.5mm-pitch vertical-mate battery connectors provide engineers in the industrial, automotive, datacom, household appliance, and consumer electronics markets with robust, reliable, and user-friendly power connectivity solutions.

KYOCERA AVX, a leading global manufacturer of advanced electronic components engineered to accelerate technological innovation and build a better future, has further expanded its industry-leading selection of standard battery connectors with the introduction of the new 9155-900 Series 2.5mm-pitch vertical-mate battery connectors.

The new 9155-900 Series 2.5mm-pitch vertical-mate battery connectors feature a unique contact geometry that deflects cleanly when a module, battery pack, mating connector, or PCB is vertically pushed into position, enabling full vertical engagement without the risk of contact damage. Traditional right-angle battery connectors require users to engage the contacts by inserting the mating module or battery pack at an angle before rotating it into position to reliably prevent contact damage that could negatively impact connector performance and lifetime. The 9155-900 Series does not. Infact, users can mate these connectors from any angle without inadvertently damaging the contacts, ensuring high-integrity connections regardless of user experience or skill level.

The 9155-900 Series 2.5mm-pitch vertical-mate battery connectors feature an extremely forgiving sweeping beam contact design and an anti-snag feature that reliably protects the contacts from damage during deflection, as well as when static. The series also features ultra-robust and -reliable gold-plated beryllium copper (BeCu) contacts that deliver excellent electrical and mechanical performance for up to 5,000 mating cycles and optional plastic locating bosses and solder tabs that maximize the mechanical stability of the connector in high-shock and vibration environments, like automotive applications.

The series features flame-retardant (UL94 V-0) black, glass-filled Nylon 46 insulators, two to six BeCu contacts with either 0.4µm or 0.8µm of selective gold-over-nickel plating (the former of which is suitable for most commercial and industrial applications and the latter of which is suitable for harsh-environment applications), and pure tin tails. They are rated for 500VACRMS or the DC equivalent, up to 3A, and operating temperatures extending from -40°C to +125°C. They are also REACH and RoHS compliant and shipped in tape and reel packaging in quantities of 800 for automated pick and place assembly.

Ideal applications for the new 9155-900 Series 2.5mm-pitch vertical-mate battery connectors extend throughout the industrial, automotive, datacom, household appliance, and consumer electronics markets and include handheld and portable industrial and consumer electronics devices that require docking or cradling, such as charging stations, internet and home appliances that require battery backup, and automotive applications that require the easy installation and removal of modules or battery packs, ranging from headsets, gaming controllers, and walkie talkies to automotive cooling fans.

“Traditional right-angle battery connectors with exposed contacts require pluggable modules to be inserted at an angle and then gently rotated into position to prevent contact damage. And while that may seem insignificant, the extra step required to safely and successfully mate traditional battery connectors increases the potential for mismating by half,” said Perrin Hardee, Product Marketing Manager at KYOCERA AVX. “Our new 9155-900 Series 2.5mm-pitch vertical-mate battery connectors are engineered to ensure proper mating from any angle and eliminate the possibility of inadvertently damaging the contacts during the process—regardless of user experience or skill level. They’re also compact and robust enough to withstand automotive levels of shock and vibration.”

The post KYOCERA AVX Releases Robust new Series of Vertical-Mating Battery Connectors appeared first on ELE Times.

CHA0402 Microwave Resistors Deliver Stable High Frequency Performance Up to 50 GHz Under Harsh Environmental Conditions

Vishay Intertechnology, Inc. announced that it has expanded its CHA Series of AEC-Q200 qualified thin film chip resistors with new devices in the 0402case size. Available with a wide range of resistance values from 10 Ω to 500 Ω, CHA0402 resistors provide high frequency performance up to 50 GHz for automotive, telecom, medical, space, avionics, and military applications.

Now available in the 02016 and 0402 case sizes, CHA series devices offer very low internal reactance and exhibit behavior close to a pure resistor over their large frequency range, with a nearly flat Z/R curve to 70 GHz and 50 GHz, respectively. The microwave resistors maintain their high frequency stability even after the most stressful AEC-Q200 tests — validated by their ΔR and Z/R measurements — guaranteeing high performance under harsh environmental conditions.

The CHA series is ideal for automotive ADAS, LIDAR, connectivity, and 4D radar systems; LEO satellites and space communication systems; X-ray, MRI, and CAT scan machines; 5G / 6G telecommunications equipment, base stations, and repeaters; military guidance and telemetry systems; drones; and RF antennas. For these applications, the CHA0402 resistors provide limiting voltage of 37 V, rated power of 300 mW at +70 °C, and a temperature coefficient of ± 100 ppm/°C, with ± 50 ppm/°C available on request.

To reduce development time and costs, the devices’ S-parameter data is available for electronic simulation, in addition to 3D models for Ansys HFSS, Modelithics Microwave Global Models (PCB and pad-scalable), and design kits. RoHS-compliant, halogen-free, and Vishay Green, the resistors are offered in waffle pack and tape and reel packaging.

The post Vishay Intertechnology CHA Series of AEC-Q200 Qualified Thin Film Chip Resistors Now Available in 0402 Case Size appeared first on ELE Times.

Among the Highlights were Special Sessions Detailing the Status and Future Directions of Technology in Key Areas

The 75th annual 2025 IEEE Electronic Components and Technology Conference (ECTC), held at the Gaylord Texan Resort & Convention Center here May 27-30, had record attendance, a record number of paper submissions/presentations, record international and student participation, and a record number of exhibitors in a sold-out exhibition hall:

• 2,518 attendees, the highest in the conference’s 75-year history and a significant increase over the 2,008 who attended last year, which itself was a record.
• The number of abstracts submitted was the highest ever (775), as were the 390 technical papers presented in 36 oral and 5 interactive presentation sessions, including one dedicated to students.
• Several paper presentations attracted more than 600 attendees, as sessions on topics of intense industry interest – such as hybrid bonding– were standing-room only.
• 16 professional development courses were attended by 596 participants.
• There were speakers from more than 20 countries globally.
• There was a record level of industry support, with 51 corporate sponsors and 138 booths in the exhibit hall.

Among the highlights were 11 Special Sessions. In these, panels of industry experts discussed the present status and future roadmaps of technologies essential for artificial intelligence (AI), high-performance computing (HPC) and other fast-growing, evolving applications.

“Advanced chip packaging technologies are essential for the development of the electronics industry, and the ECTC conference has long been the world’s leading forum for advancements in microelectronics packaging and component science and technology,” said Przemyslaw Gromala, ECTC 2025 Program Chair and Chief Expert/R&D Project Leader at Robert Bosch GmbH. “ECTC serves as a collaborative global platform for exploring cutting-edge advancements in microelectronic packaging, fostering innovation and addressing key industry challenges. This year’s Special Sessions offered a rich selection of compelling topics and expert panelists.”

Here are highlights from three of the ECTC 2025 Special Sessions:

Advanced Materials for Enabling Co-Packaged Optics Integration – This Special Session was co-Chaired by Karan Bhangaonkar (Google) and Vidya Jayaram (Chipletz). Panelists were Mark Gerber (ASE), Z. Rena Huang (Rennselaer Polytechnic Inst.); Padraic Morrissey (Tyndall National Inst.), Kumar Abhishek Singh (Intel) and Christopher Striemer (AIM Photonics).

As modern computing strives for higher performance, co-packaged optics or CPO (i.e., the integration of optics and electronics on a substrate) is emerging as a solution to meet computing/communication demands for high bandwidth at low power. The innovations, challenges and future needs to realize CPO technology were discussed in this Special Session.

Gerber from ASE gave an overview of the system requirements that are driving CPO material considerations, noting that heat can have significant effects on photonic integrated circuits. He also identified other issues that increase thermal sensitivities in CPO architectures, such as flux outgassing, and described why the order in which assembly steps occur also has an impact.

Huang from RPI said that while much work is taking place to understand and address CPO packaging considerations, much more progress is needed, especially for AI chiplets for large-language models (LLMs), where the key concerns are speed, power and efficiency. She discussed the possibility to build optical networks on optical interposers/wafers/panels, noting that large chiplets could be optically connected with optical interposers, using optical waveguides to reduce loss.

Morrissey from Tyndall said that for optimum CPO performance, the optics must be moved closer to the edge of compute, and glass has great potential for use as a substrate because it’s optically transparent, has good RF behavior, and lends itself to fabricating high-quality vias. Glass also can work beyond wafers and with really large panels, he said, and can lead to pluggable connectivity. However, he noted that heat is an issue with glass.

Singh from Intel said CPO isn’t just desirable, it’s absolutely necessary to scale-up advanced packaging. He noted that CPO allows both edge and vertical interconnects, meaning there are many areas where materials come into play. He said that while CPO architectures face unique challenges – such as foreign particles blocking the light path – they also face many of the same issues as non-CPO architectures, such as misalignment and cracks. But these challenges bring opportunities to advance the state-of-the-art.

Striemer from Aim Photonics described why optically active materials will drive CPO, and also outlined the need for passive material innovations such as 3D printing and novel designs like suspended structures, although right now it’s unclear which ones will offer the most benefit.

Hybrid Bonding (HB): to B, or not to B? Needs and challenges for the next decade – This Special Session was co-Chaired by Benson Chan (Binghamton Univ.), Masha Gorchichko (Applied Materials) and Dishit Parekh (AMD). The panelists were Su Jin Ahn (Samsung), Anne Jourdain (imec), Chet Lenox (KLA), Laura Mirkarimi (Adeia), Masao Tomikawa (Toray Ind.) and Brett Wilkerson (AMD).

Hybrid bonding is the key technology for high-density 3D integration and advanced packaging, and in recent years, significant advancements were made in pitch scaling, die-to-die bonding, alternative materials, and low-temperature processes. But many engineering and technological challenges remain, such as defectivity, metrology, design challenges, and cost. This panel summarized recent advancements in HB, identified the most pressing issues limiting its adoption for mainstream electronics, and outlined its likely development over the next decade.

Gorchichko from Applied noted the different types of HB (wafer-wafer, die-wafer, die-die) and said that while HB debuted about 10 years ago in an image sensor from Sony, today the focus is on integrating DRAM memory. She said that advanced metrology is key, because we are now talking about molecular bonds, and therefore an understanding of all the relevant chemical and mechanical requirements is needed. Moreover, to get higher yields and more throughput, not just better but also faster metrology is needed. She noted that thermal concerns are an issue with increasing power density.

Su Jin Ahn from Samsung outlined major HB technology issues and challenges. One is that the many process steps required leave particles on the bonding surface, leading to potential failure. Another is that for AI, the wider, thinner dies used degrade bonding and lead to quality issues. She said what’s needed are advanced metrology/inspection tools and methods, along with design/process co-optimization for bonding. She said the main driver going forward is the need to combine chip and packaging technologies.

Jourdain from imec emphasized the need for fast, reliable metrology solutions, and discussed the pros and cons of copper interconnect and barrier metals.

Lenox from KLA noted the many needs and challenges that come with HB – interposers,  warpage control, dielectric interface profiles, clean singulation, bonding alignment – and said that while HB is important, there are other less complex and costly technologies that might preclude the need for HB, such as bridges. He also said that HB creates a need for advanced metrology and inspection capabilities all the way from the front end to packaging.

Mirkarimi from Adeia focused on three areas: metrology improvements for improved throughput and yield; the evolution of 2.5D/3.5D HB packaging technology; and thermal solutions for high power-density chipsets. With regard to metrology, she noted that HB architectural complexity demands a reliable “health of the line” metrology protocol for all process steps. Also, better ways to understand nanoscale topography and to detect surface defects are needed, as are ways to rework HB to reduce costs, such as bond energy engineering. Regarding HB packaging trends and challenges, she said that ultra-high bandwidth, inter-die communication at a 1µm die-to-wafer pitch will require system simplification, such as bonding dies directly to the substrate or using bridge dies to replace an interposer. For thermal management, she described a potential cooling solution that makes use of an integrated manifold and a cold plate bonded to an IC, among other features, and which can be custom-designed to manage specific heat maps.

Tomikawa from Toray said that as the need to bond chips to interposers increases, the need for HB processes that make use of polyimide (PI) resin will become more apparent. That’s because PI enables low-temperature, low-pressure HB processes which minimize warpage and device damage. Many challenges remain, though – precise copper protrusion control and low-temperature copper diffusion bonding are key factors for success.

Wilkerson from AMD spoke from a product perspective. He pointed out that HB requires complex processing. much time and many expensive fab processes, and that it can take several weeks to accomplish, which impacts a company’s time-to-market capabilities. He said thermal resistance is a critical issue, and that there’s a need for standards for the use of HB for memory integration with silicon.

Thermal Management Solutions for Next-Generation Backside Power Delivery – This Special Session was co-Chaired by Dwayne R. Shirley (Marvell) and Tiwei Wei (Purdue University/UCLA). The panelists were Muhannad Bakir (Georgia Tech), Dureseti Chidambarrao (IBM) and Herman Oprins (imec).

The increasing power density and thermal challenges in advanced semiconductor packaging have led to the development of backside power delivery (BPD) technology, where the power delivery network is relocated from the frontside to the backside of a silicon wafer. While it enhances power efficiency, performance, and design flexibility, BPD also introduces thermal management challenges and the need for innovative cooling solutions. Participants in this Special Session discussed the latest advancements and challenges in thermal management for next-generation BPD.

Bakir from Georgia Tech said that for 3D architectures, interlayer cooling is needed, but asked, how do we enable high-density interconnect within such a structure? He said the solution is to fabricate through-silicon via (TSV) structures with integrated cooling, electrical conductivity, and power, using vertical vias. He addressed the many issues that such a design brings – aspect ratios, TSV heights, etc.

Chidambarrao from IBM said that because there are lots of subtleties with BPD architectures, reducing the problem to important basics and solving it with enough accuracy is key. He noted that chip complexity significantly impacts thermal conductivity, and that level-to-level differences can be quite large. He said that an understanding of the entire chip overlay is needed, because there are tricky hot spots, and he described IBM’s strategy, which is to use machine learning plus FEA modeling to calculate the average properties of multiple levels together. He noted that BPD issues only become worse with 3D architectures.

Oprins from imec said it is absolutely critical to identify the basic problems with each particular BPD architecture, because there are so many different flavors of BPD.

Wei from Purdue/UCLA said that bond interfaces drive thermal impacts, and she gave an overview of research into different ways to deal with this issue, encompassing factors such as die thickness, CMOS-compatible structures like air gaps or glass bridges, trenches, copper/diamond microbump bonding, two-layer microchannel structures (i.e. manifolds), and others.

The post A Record Year for the 75th Annual IEEE Electronic Components and Technology Conference (ECTC) appeared first on ELE Times.

Author: Ajay Kumar, R&D Principal FPGA Engineer, Keysight Technologies

The Open Radio Access Network (O-RAN) Alliance led by a group of mobile network operators (MNOs), has been the driving force for the evolution of 5G Radio Access Network (RAN). The aim is to steer the industry towards more open, interoperable, virtualized, and intelligent architecture. This article outlines the crucial validation steps needed to bring O-RAN radio from silicon to deployment-ready, secure and intelligent. It highlights the needs and challenges in pre- and post-silicon validation, multiple-input multiple-output (MIMO)/massive MIMO (mMIMO) performance verification, energy efficiency measurements, security testing, and radio management. To begin, let us explore the brief history, evolution, and architecture of the RAN.

Historically, RAN deployments have been dominated by proprietary hardware from a small group of vendors, leading to high cost and limited flexibility. O-RAN addresses these challenges by disaggregating the RAN architecture and introducing standardized interfaces for interoperability and virtualization. This open approach fosters flexibility enabling organizations to mix and match solutions from different vendors bringing down costs and promoting innovation.

In addition, recent advancements in artificial intelligence (AI) and machine learning (ML) are further enhancing O-RAN by making it more intelligent. This move will enable even more innovation when it comes to energy efficiency, enhancing security, network optimization, and maintenance of the network.

Key Components of O-RAN architecture

Figure 1 below breaks down the key components of O-RAN architecture which includes:

• O-RAN radio unit (O-RU): Performs analog/RF transmitter and receiver functions along with processing the lower part of the physical layer such as Fast Fourier Transform (FFT)/inverse FFT (IFFT), beamforming, precoding, cyclic prefix insertion/removal, and compression/decompression.
• O-RAN distributed unit (O-DU): Handles baseband processing, scheduling, radio link control, medium access control, and the upper part of the physical layer.
• O-RAN central unit (O-CU): A centralized and virtualized unit that is responsible for the packet data convergence protocol layer.
• O-RAN intelligent controller (O-RIC): Handles near real-time and non-real-time service to gather information from the network and uses artificial intelligence and machine learning to perform the necessary optimization tasks.
• Service Management and Orchestration (SMO): Manages and orchestrates the RAN centrally including both RICs.

Figure 1: O-RAN architecture with user equipment and core network.

The Radio Unit (RU) is a critical fronthaul component, providing wireless connectivity to user equipment. It communicates with the rest of the O-RAN components to transfer information to and from the core network. O-RAN alliance 7.2x split option redistributes physical layer functions between O-RU and O-DU to strike a balance between fronthaul bandwidth requirement, latencies and the complexity of the components. This influences the overall O-RU architecture of radio unit by adding signal processing functions to the digital part of the radio.

During the product development cycle, design teams validate functionality through block-level simulations. However, at the system level, simulation complexity and runtime increase dramatically. This makes it vital to initiate pre-silicon validation at the right stage and well before tape-out.

Pre-Silicon Validation to Build Confidence Before Tape-Out

Pre-silicon validation involves emulating the design before fabricating the chip to provide a more accurate representation of the design in real-world conditions. This step helps to achieve testing goals in a reasonable time span by identifying design flaws early on. However, to determine the required test cases for specific functions, a thorough understanding of the test specifications is required. These test specifications cover a wide variety of tests for control, user, synchronization and management (CUSM) plane protocols.

Creating test vectors that conform to 5G standards is a complex task, given the vast number of parameters involved.  Adding to the challenge, these test stimuli need to be sent in a synchronous manner from both Ethernet interface on DU and either through the non-standardized time-domain IQ interface or the RF interface side for complete radio.

Figure 2: O-RU ASIC test protocol stack

To achieve the pre-silicon testing goals, it is important to have pre-verified test suites to avoid spending time debugging the test cases itself. Test setup observability is also of utmost importance in order to identify and resolve any issued early, and to prevent potential flaws from being carried over into the final taped out design. Figure 2 shows O-RU test protocol stack and controller test setup for ASIC emulation.

Post-Silicon Validation to Bridge Gap for Production

While the interoperability testing methodology, which involved testing the components together as a gNB, has remained largely consistent, conformance testing has evolved. Conformance testing ensures that each component adheres to specifications defined by the O-RAN Alliance.

To maintain momentum in the fast-paced design cycle, a smooth transition is required from pre-silicon to post-silicon validation. Hence, the same workflow and tools for signal generation and analysis are required to reuse the same test suite.

Figure 3: O-RU testing and validation test setup diagram and flow

In the post-silicon phase, testing access is primarily limited to the O-RAN and RF ports of the O-RU. To test O-RU, as illustrated in Figure 3, an O-DU emulator is required to send and receive CUSM-plane messages on O-RAN port, a vector signal analyzer to receive downlink RF signal sent by O-RU and a signal generator to send uplink signal to O-RU. Additional equipment may be required for non-conducted tests. All these test setup components are required to synchronize to common clock and work with-in tight fronthaul timing requirements.

MIMO and Massive MIMO to Achieve Desired Performance

MIMO and mMIMO technologies use multiple antennas – typically 16 or more for mMIMO systems, to serve multiple users simultaneously on the same frequency band. This increases spectral efficiency and throughput. With massive MIMO, advanced beamforming techniques need to be applied to steer radio signals precisely towards users to improve signal quality and reduce interference. However, as system complexity grows, performance validation can be highly complex, time-consuming and expensive.

To test massive MIMO radio unit, an O-DU emulator is required with tools to construct, play, capture and measure O-RAN traffic over ethernet interface; and multi-RF transceiver to generate the beams with noise and interference in different directions and receive at the same time. Test setups not only need to measure all beams and signals in uplink and downlink directions but also have the ability to pinpoint beamforming issues. Figure 4 shows an example of downlink beamforming with magnitude and phase weightings and corresponding beam patterns and EVM figures.

Figure 4: Downlink beamforming with magnitude and phase weightings and corresponding beam patterns, EVM figures

Energy Efficiency for Sustainability

With the exponential growth in wireless connectivity, energy efficiency has become a top priority for operators in order to reduce operational costs, achieve sustainability goals and reduce environmental impact. As many studies have shown that majority of energy is consumed by RAN, the O-RAN community is working on standardizing energy saving modes, with the goal to reduce power consumption without degrading the quality of service.

O-RU is the most power-hungry component in the access network. However, energy saving can be accomplished by numerous means such as variable clocking, dynamic power amplifier biasing, cell & carrier shutdown, RF channel reconfiguration, sleep modes, discontinuous transmission & reception. With the disaggregation of RAN, there is need to characterize each component to completely understand the trade-offs at system and network level. Figure 5 shows O-RU site power dissipation over a 24-hour period with and without microsleep enabled and potential savings.

Figure 5: O-RU site power dissipation over a 24-hour period

Security Testing for Uninterrupted Radio Access

In a disaggregated, multivendor O-RAN environment, there are increased security risks for individual components, interfaces, network functions, and data. The O-RAN threat modeling and risk assessment specification includes over 160 distinct threats to these elements including O-RU.

Each element, protocol, and interface need to be scanned for vulnerabilities, stressed under real-world threat scenarios and checked for performance under simulated attacks. It is also important to ensure effective risk mitigation strategies are in place. With this in mind, automated security testing is critical, not only for compliance with security standards but to ensure guaranteed radio access, and alignment with O-RAN zero trust principles.

Radio Management with RIC for Operational Efficiencies

While the Service Management and Orchestration (SMO) layer handles the coordination of network resources, the RIC plays a key role in optimizing radio access network performance. The non-real-time RIC uses rApps to apply AI/ML-driven long-term optimization for less time sensitive operations. Whereas, the near-real-time RIC deploys xApps to make   real-time network adjustments that are between ten milliseconds to one second.

Together, these controllers enhance network utilization and operational efficiency through advanced functions such as beam management and radio resource management. To ensure reliable performance, both open-loop and closed-loop strategies must be implemented and rigorously tested for continuous optimization.

Conclusion

The journey of O-RAN radio unit from silicon validation to smart networks is highly complex but essential to realize the full potential of open and intelligent networks. To keep up with accelerated design cycles and ensuring compliance with O-RAN fronthaul standards, it is essential to have well-planned test setups, robust tools, pre-verified test cases, and automated test suites to transition smoothly through different phases.

The post Validating the O-RAN Radio: From Silicon to Smart Networks appeared first on ELE Times.

With WiseWare 1.1, GaN-Based Designs Achieve Compact Size and Peak Efficiency

Wise Integration, a pioneer in digital control for gallium nitride (GaN) and GaN IC-based power supplies, announced the release to production of its first fully digital controller, WiseWare 1.1 (WIW1101) based on the MCU 32 bits. This milestone innovation enables high-frequency operation up to 2 MHz, unlocking new levels of power density, efficiency, and form factor in compact AC-DC power converters. The product is now ready for volume production in customer-validated designs.

“This release marks a strategic milestone for Wise Integration’s roadmap,” said Thierry Bouchet, CEO of Wise Integration. “WiseWare 1.1 represents more than a product—it’s a key pillar in our vision to redefine power electronics through digital control. It strengthens our value proposition in high-density power conversion and reinforces our leadership as GaN technology scales to mass adoption.”

Digitally Driven, GaN Optimized

Unlike legacy analog solutions, WiseWare 1.1 leverages the speed and switching capabilities of GaN (gallium nitride) through a proprietary digital control algorithm in a MCU 32 bits, that enables zero voltage switching (ZVS) across all power transistors. Designed specifically for totem pole power-factor correction (PFC) architectures in critical-construction mode (CrCM), this controller allows engineers to dramatically reduce the size, weight, and thickness of magnetic components while maintaining >98 percent efficiency.

Customer-Proven Performance and Global Momentum

WiseWare 1.1 supports a broad power range from 100 W to 1.5 kW, making it suitable for a wide array of modern applications requiring both compactness and high energy efficiency.

Designed with flexibility in mind, WiseWare 1.1 works seamlessly with standard GaN across the full RDS(on) spectrum (drain-source on-resistance), giving power designers the freedom to choose the optimal transistor for each application—without compromising performance.

Typical applications include:

• High-efficiency AC-DC power converters,
• High-power density designs,
• Power supplies for servers,
• USB power delivery adapters for laptops and notebooks, and
• Switch-mode power supplies for monitors and displays.

The WiseWare 1.1 platform has already demonstrated robust market validation, with multiple customer design-ins and live demos at PCIM Europe, one of the industry’s most prominent power- electronics exhibitions. These demonstrations showcased 300W totem pole PFC converter boards using WiseWare 1.1 and WiseGan WI71060A transistors (RDS(on)=60mohms), operating from 90–264 VAC input to a 400 VDC output. At the same time, technical collaborations are progressing in Asia, reinforcing the company’s global reach.

Technical Highlights of WiseWare 1.1 (WIW1101)

• Switching frequency: up to 2 MHz
• Control mode: CrCM ensuring full ZVS
• Integrated protections: OCP, OVP, OTP, OPP
• Inrush management: no need for relay or thermistor
• Standby power: as low as 18 mW
• EMC-compliant demoboard with >98 percent efficiency

The post Wise Integration Launches First Digital Controller, WiseWare 1.1, for GaN Totem Pole PFC with High Switching Frequency Up to 2 MHz appeared first on ELE Times.

Author: Maury Wood, VP Strategic Marketing

The economic and quality-of-life benefits of electrification is driving the adoption of HV to 48V DC-DC conversion across many markets. Integrated high-voltage to 48V power modules are becoming more common in EVs and other applications as battery voltages increase. Learn how bidirectional fixed-ratio bus converter modules are optimizing power delivery in these systems.

Bidirectional, power-dense DC–DC converters are the ideal solution for the new and challenging use cases presented by machine electrification across numerous industries. This paper demonstrates how high-efficiency, fixed-ratio DC–DC converter modules are capable of supporting transient regenerative loads without the cost and complexity of liquid cooling.

Electrification, the societal movement away from fossil fuel powered machines, is sweeping across all industrial, vehicle and aerospace/defense equipment categories. The economic and cultural forces driving this movement are well known and generally undisputed. Electrification has both environmental benefits (lower associated carbon emissions, for example) and key performance benefits such as high-torque motors enabling high levels of acceleration in electric vehicles.

High DC voltages ranging from 270V up to 1,000V are commonly used in electric equipment and vehicles as a means to reduce power losses in the bussing or cabling between the power source and the power load (linear and rotational motors, actuators, sensors, processors, point-of-load low voltage regulators, etc.). High voltages also enable the delivery of high levels of transduced mechanical force, both linear displacement and rotational displacement.

DC–DC converters play a vital role in transforming high voltages to lower voltages, with or without isolation, regulation and reverse operation, in electric vehicles, data centers, communications systems and industrial equipment of all types. These power converters can be implemented using discrete components or in modular package form. DC–DC converters power modules are the focus of this article.

Over the past 10 years or so, the dominant DC subsystem power delivery network (PDN) voltage of 12V has begun to transition to 48V (54V in data centers), driven by the significant increase in load power requirements, and the need to maintain safety extra-low voltage (SELV) levels, heralding the emergence of HV-to-48VDC converters. Coincident with this evolutionary change of subsystem PDN voltage has been the adoption of 48V-centric dc–dc converter power modules, which have numerous ease-of-use, power density, power scaling and weight benefits, and which support regeneration (the return of energy to the primary power source).

The use of high DC voltage is ramping in equipment, vehicles and infrastructure

Electrolytic batteries, using a fast-evolving variety of chemistries, are often used as both high-voltage and low-voltage dc power sources and are obviously ideal for mobile (non-tethered) and handheld applications. The rechargeable nature of many battery types, from lead acid cells to the latest sodium-ion and graphene types, as well as modern supercapacitors, support regenerative energy use cases that in aggregate are destined to save enormous amounts of energy globally.

In electric vehicles, it is common to see nominal battery pack voltages of 400VDC and 800VDC. In the future, 800V battery packs are likely to dominate, due to escalating energy density trends. Mild hybrid vehicles generally use 48VDC batteries, with some manufacturers electing to use 12VDC multi-cell packs. Electric vehicles include not only automobiles but also industrial and agricultural vehicles (including construction vehicles such as excavators and tractors) as well as all types of recreational vehicle platforms (personal watercraft, 4×4 off-road vehicles, snow machines, motorcycles, etc.). With few exceptions, notably driving range and the time required to refuel or recharge the vehicle, the electric versions of these vehicle types tend to have superior end-user performance (such as acceleration, torque and ride quality) than their internal combustion engine counterparts.

Why is 48VDC power distribution replacing 12VDC power distribution?

Higher distribution voltage delivers the same power with lower current. Because distribution power losses (typically using copper or aluminum busbars or cables) are a function of the square of the current (P = I2R), in high power applications these substantial conduction losses due to busbar and cable resistance can be reduced by using higher distribution voltages. Busbars and cables are sized according to current carrying capacity (referred to as ampacity), and a 4x increase in voltage and a 4x decrease in current has a substantial impact on sizing, weight and cost. For example, to conduct 200A, a copper busbar needs a cross-sectional area of about 0.0625 square inches, whereas to conduct 800A, a copper busbar needs a cross-sectional square of about 0.3125 square inches, a difference of a factor of five [3]. The size and weight of busbars and cabling associated with 48VDC are thinner, lighter and thus cheaper than those associated with 12VDC power delivery networks.

Exploring the capabilities of high voltage to 48V conversion with a fixed-ratio converter module

The technical capabilities of advanced 48V power modules unlock new levels of efficiency and performance. For example, the Vicor BCM6135 series is a family of fixed-ratio, isolated (4242V), bus converter power modules with integrated magnetics and by design are inherently bidirectional, supporting regenerative battery applications.

One member of this family, a 2.5kW steady-state-rated module, has a ratiometric conversion “K factor” (the equivalent of transformer turns ratio) of 1/16 and is rated to convert nominal 800V to nominal 50V.

Due to its circuit topology and zero-voltage and zero-current switching, its peak efficiency is 97.3%, resulting in 67.5W of power loss as heat (2.7% x 2.5kW) to thermally manage at peak power delivery (3.1kW) for a given case temperature of TCASE of 70°C. The volumetric power density is high at 159kW/L (module dimensions are 61.3mm by 35.4mm by 7.3mm); module weight is 58g, yielding a continuous massimetric power density of 43.1W/g.

Figure 1:  BCM6135 Bus Converter Module.

The BCM6135 (see Figure 1) supports instantaneous bidirectional start-up and steady-state operation. Furthermore, the BCM6135 acts as a capacitance multiplier, scaling the bulk capacitance across the high-voltage (HI) bus to the low-voltage (LO) bus by the square of the K factor (162 = 256). This attribute saves the cost, weight and space of the bypass or bulk capacitors that otherwise would be required on the low-voltage bus.

Additionally, the high switching frequency of the BCM enables extremely fast load step transient (di/dt) performance of 8 MA/s, allowing the module to replace auxiliary batteries and supercapacitors otherwise needed to support the transient load steps in demanding applications, including those in high-performance computing and electric vehicles.

The BCM’s wide input voltage range (from 520V to 920V) supports a wide variety of DC voltage distribution standards. Wide input voltage range is one of the attributes of the proprietary Sine Amplitude Converter (SAC) topology used in the BCM. The importance of wide input voltage range is well illustrated by the recommendation of the German Association of the Automotive Industry, or VDA, VDA 320: Electric and Electronic Components in Motor Vehicles – 48V On-Board Power Supply–Requirements and Tests (version 01/20/2025), also known as LV 148, developed by the automotive OEMs Audi, BMW, Daimler, Porsche and Volkswagen as a common OEM standard for 48VDC voltage range components. This guidance recommends that the battery possess an unlimited voltage operating range between 36V and 52V, limited operating modes between 24V and 54V (see Figure 2).

Figure 2:  VDA 320 48VDC voltage range recommendation.

The thin (7.3mm) BCM6135 module family is overmolded and electroplated for thermal agility, shielded and interconnected through surface mount terminals or through-hole pins, and the three-dimensionally interconnected ChiP package offers low thermal impedance and high thermal adeptness, including a coplanar thermal interface to heat sinks and cold plates.

Regenerative active suspension without active cooling

The BCM6135 conversion efficiency at high ambient temperature (70°C) and sourcing 50A output current at 48V is typically 97.3%. This high-voltage to 48V power module is often used in continuous load applications, but it is also well suited to transient pulse load applications and depending on the pulse duty cycle of the load, potentially can be used with passive cooling (no forced air or liquid cooling). Regenerative electric vehicle active suspension (which can be combined with active anti-roll control) is an excellent example of a bidirectional use case that is characteristically transient. The linear motors that actuate the active suspension are activated only when bumps and potholes are encountered. This type of system application is best modeled and described using peak power conversion metrics.

In years past, 12VDC has been shown to be inadequate (within reasonable size, weight and cost constraints) to power active suspension motors. Note that an electric vehicle’s 800VDC main battery could be used to power an active suspension subsystem, but running 800VDC to the vehicle’s periphery reduces safety, particularly to first responders to crash accidents.

The guaranteed peak power rating of this BCM6135 model is 3.1kW for 20ms, with 25% duty cycle, at the low end of its operating voltage range (i.e., low line operation; the full continuous operating range is 17V to 57.5V). As can be expected, the peak power output derates for longer durations of the transient demand. Developing an application- level peak power specification for an active suspension is complex, as worst-case road surface profile, cooling method, size, weight and cost constraint goals can vary enormously. However, to minimize size, weight and cost, it is typically strongly preferred to use passive thermal management for the active suspension DC-DC converter subsystem (i.e., conductive/convective heatsinks but no fan forced air or circulating liquid cold-plates).

The design challenge to meet these constraints amounts to validating that the power converter module can meet the peak transient load demands without incurring thermally activated module shut down. The BCM6135 is electroplated on both sides, and the heat sink(s) should ideally contact both sides of the package. The module, which has a package thermal capacitance of 44.5 J/K, includes an internal temperature sensor, which in combination with the two sided thermal model, enables estimation of the maximum internal MOSFET “junction” temperature as shown in Figures 3 and 4.

Figure 3:  BCM6135 two-sided cooling thermal resistance model using electrical element
equivalence.

Figure 4:  BCM6135 two-sided annotated thermal resistance model with element value annotation.

Estimation of internal module temperature profile

The thermal capacitance is used to calculate the thermal time constant of the module during a transient thermal event. This time constant is the product of thermal capacitance and thermal resistance. The value given for thermal capacitance in product datasheets is a calculated value that assumes the product is at a uniform temperature internally (throughout the module) at all times during the transient thermal event. This is a linearized simplification, but it allows the product designer a method to quickly estimate the temperature-versus-time behavior of the product early in the product design cycle. The simplification of uniform internal temperature also implies that the thermal time constant better reflects actual product performance when utilized for double-sided cooling of the 48V power module using heat sinks.

For example, an equivalent circuit to model the thermal resistance of the BCM6135 is shown in Figure 5. Electrical resistors are analogous to thermal resistances in units of degrees Celsius per watt [°C/W]. A current source is analogous to a heat source in units of watt [W]. A voltage source is analogous to a temperature source in this circuit model with units of degrees Celsius [°C].

Figure 5:  BCM6135 thermal model equivalent electrical circuit assumes package top and bottom cooling with an equivalent thermal resistance of 0.7°C/W and case temperature of 35°C.

The equivalent circuit assumes package top and bottom cooling with an equivalent thermal resistance of 0.7°C/W and case temperature of 35°C, thermal capacitance of the module of 44.5J/K, and that the module dissipates 130W during 30 seconds-on, 30 seconds-off continuously repeated pulses.

Simulation results for this circuit are shown in Figure 6; the operating conditions are 520 VHI, 32.5 VLO, 80A low-side peak output current (2.6kW peak output power). During the first power pulse, the maximum internal temperature increases to about 90°C. The next pulse shows an increase in maximum internal temperature to about 115°C. Repeated pulses would show maximum internal temperature remains around 115°C.

Figure 6:  Simulated BCM pulsed power thermodynamics under the operating conditions 520 VHI, 32.5 VLO, 80A low-side peak output current. First power pulse shows the maximum internal temperature increases to about 90°C, followed by an increase to about 115°C. Repeated pulses would show maximum internal temperature limits to about 115°C.

Application testing of the module should always be conducted to validate initial modeled estimates of transient performance and to properly design a passive convective heatsink.

Lab test results

The BCM6135 is inherently bidirectional with instantaneous switching of the directional mode of operation. The conversion efficiency of the module is the same regardless of the direction of current flow.

In the regenerative active suspension application, the 800V battery is sourcing current when the vehicle is traveling over smooth road surfaces and the suspension actuation motor is the 48V load. When a pothole is encountered by the vehicle, the motors in the suspension momentarily become generators (compression), and the voltage on the low side of the BCM increases above the voltage of the 800V battery divided by the conversion K factor (K = 1/16 in this application). This difference in potential causes the bus converter to swap the direction of current flow, without internal loop controller intervention. The 800V battery then momentarily becomes the load (rebound) and recovers energy by charging through its battery management system circuit.

Once the displacement from the pothole has subsided, the bus converter will once again step down the 800V battery and supply current to the suspension linear motors. All of this occurs without intervention by the vehicle’s on-board processors. The frequency of these suspension actuations ranges from about 1Hz to 10Hz. Interestingly, the road surface profile is essentially an analog of the bus converter load step dynamics.

It is the potential difference between the bus converter high and low sides that defines the current amplitude and direction.

Imagine that the load on the low side is a passive load (such as a resistor) and on the high side there is a battery with a potential of 800V. The BCM will act as a K = 1/16 voltage transformer and create a potential on the low side equal to 50V. Current will flow through that resistor and is determined by voltage applied across the resistor.

If an energy source is added to the low side with potential of 51V and replaces the resistor, the potential difference between the output of BCM (50V) and that energy source (51V) will be negative (–1V), and the current will start flowing in the opposite direction. The level of this current will be defined by the total path resistance inside the BCM and the battery.

This can be visualized with the BCM connected to 800V source on the high side and a bidirectional power supply on the low side. By varying the voltage on the bidirectional power supply ±100mV, current will flow alternatively in both directions, and the peak current will be 100mV divided by the BCM output resistance. For a bus converter output impedance of 25mΩ, this yields a peak current of approximately 4A flowing bidirectionally under these assumptions (Figure 7).

Figure 7:  Oscilloscope screen capture of bus converter bidirectional current flow by varying the voltage on the bidirectional power supply ±100mV, current will flow alternatively in both directions, and the peak current will be 100mV divided by the BCM output resistance. The bus converter output impedance might be typically 25mΩ, so this yields a peak current of approximately 4A flowing bidirectionally under these assumptions.

In lab tests (Figure 8), the BCM6135 has demonstrated peak power of 4kW (80A at 50V) for 60ms, an indicator that the module design is thermally robust across dynamic loads.

Figure 8:  Oscilloscope screen capture – 4kW for 60ms. In lab tests the BCM6135 has demonstrated peak Power of 4kW (80A at 50V) for 60ms, an indicator that the module design is thermally robust across dynamic loads.

In a second lab test (Figure 9), the load was pulsed from 16A to 80A with a 10% duty cycle (900ms at 16A and 100ms at 80A). The operating condition is 520VHI and 32.5VLO; this is the low end of the supported BCM6135 voltage range. The average power delivery was 720W (22A at 32.5V). Over the course of 30 minutes (1800s), the internal sensor “read temperature” (a proxy for junction temperature) indicated a steady-state temperature of ~100°C, considerably below the maximum allowable junction temperature of 125°C. The test setup was passive cooling with a single-sided heat sink. This is another positive indicator for the targeted passively cooled application.

Figure 9:  10% duty cycle 16A to 80A load step with 100°C steady-state read temperature after 1800 seconds (with single-sided heat sink).

On the other hand, in a third lab test (see Figure 10), with the same thermal management setup, the average power delivery was increased to 1.1kW (22A at 50V). In this test, the operating condition is 800VHI and 50VLO; this is the high end of the supported BCM6135 voltage range. The load was pulsed from 17.5A to 70A with a 10% duty cycle (900ms at 17.5A and 100ms at 70A). In 7.5 minutes, the sensed internal temperature was 100°C and was still rising (not in steady state). But 7.5 minutes (450 seconds) is a much longer duration than 20 seconds, so this is a positive indicator that the BCM6135 may meet some active suspension design requirements.

Ultimately, the BCM6135 was lab characterized to support an average power of 1.3kW for 30 seconds with a passively-cooled heat sink across the sealed-enclosure operating temperature range.

Active suspension design objectives include road surface profile assumptions (amplitude and duration of bumps and holes that can be mitigated), and these assumptions bear directly on the required peak power capability of the DC-DC converter. The electromagnetic characteristics of the linear motor also impact the DC-DC converter requirements. That said, the BCM6135 is an indispensable bus converter module for contemporary active suspension, active anti-roll control DC-DC converter subsystems.

Conclusion

The economic and quality-of-life benefits of electrification is driving the adoption of HV to 48V DC-DC conversion across equipment types throughout the global economy. Integrated high-voltage to 48V power modules are becoming more common in EVs and HEVs as battery voltages increase and 48V low voltage buses become more widespread.

Next-generation bidirectional fixed-ratio bus converter modules are capable of meeting electrically and thermally demanding requirements in transient regenerative use case applications such as active electric vehicle suspensions. The passively cooled findings presented are significant in light of the accelerating trend towards more costly liquid-cooled power delivery systems.

The post High-voltage bus converter power modules for electric vehicle 48V power delivery networks appeared first on ELE Times.

Firmware over-the-air updates and remote cryptographic key management provide scalable solutions for addressing IoT security challenges

International cybersecurity regulations continue to adapt to meet the evolving threat landscape. One major focus is on outdated firmware in IoT devices, which can present significant security vulnerabilities. To address these challenges, Microchip Technology is enhancing its TrustMANAGER platform to include secure code signing and Firmware Over-the-Air (FOTA) update delivery as well as remote management of firmware images, cryptographic keys and digital certificates. These advancements support compliance with the European Cyber Resilience Act (CRA) which mandates strong cybersecurity measures for digital products sold in the European Union (EU). Aligned with standards like the European Telecommunications Standards Institute (ETSI) EN 303 645 baseline requirements of cybersecurity for consumer IoT and the International Society of Automation (ISA)/International Electrotechnical Commission (IEC) 62443 security of industrial automation and control systems standards, the CRA sets a precedent that is expected to influence regulations worldwide.

Microchip’s ECC608 TrustMANAGER leverages Kudelski IoT’s keySTREAM Software as a Service (SaaS) to deliver a secure authentication Integrated Circuit (IC) that is designed to store, protect and manage cryptographic keys and certificates.  With the addition of FOTA services, the platform helps customers securely deploy real-time firmware updates to remotely patch vulnerabilities and comply with cybersecurity regulations.

“As evolving cybersecurity regulations require connected device manufacturers to prioritize the implementation of mechanisms for secure firmware updates, lifecycle credential management and effective fleet deployment,” said Nuri Dagdeviren, corporate vice president of Microchip’s security products business unit. “The addition of FOTA services to Microchip’s TrustMANAGER platform offers a scalable solution that removes the need for manual, and expensive, static infrastructure security updates. FOTA updates allow customers to save resources while fulfilling compliance requirements and helping to future-proof their products against emerging threats and evolving regulations.”

Further enhancing cybersecurity compliance, the Microchip WINCS02PC Wi-Fi network controller module used in the TrustMANAGER development kit is now certified against the Radio Equipment Directive (RED) for secure and reliable cloud connectivity. RED establishes strict standards for radio devices in the EU, focusing on network security, data protection and fraud prevention. Beginning August 1, 2025, all wireless devices sold in the EU market must adhere to RED cybersecurity provisions.

By incorporating these additional services, TrustMANAGER—governed by keySTREAM—tackles key challenges with IoT security, regulatory compliance, device lifecycle management and fleet management. This solution is designed to serve IoT device manufacturers and industrial automation providers.

Development Tools

The ECC608 TrustMANAGER is compatible with the MPLAB X Integrated Development Environment (IDE) and supported by Microchip’s CryptoAuth PRO development board (EV89U05A) and the CryptoAuthLib software library. The Trust Platform Design Suite (TPDS) contains a use case example including onboarding educational steps and a firmware code example to enable the keySTREAM service to AWS with the ECC608 secure element running on a 32-bit Arm Cortex-M4-based PIC32CX SG41MCU and a WINCS02PC Wi-Fi module.

The post Microchip Enhances TrustMANAGER Platform to Support CRA Compliance and Cybersecurity Regulations appeared first on ELE Times.

In the changing scene of industrial automation and electrification, another part of the PDS systems has found its way into the power drive system of the electrical motors in a large number of applications-ranging from robotics to conveyors, to HVAC systems and various industrial pumps. At the center of power is the semiconductor that determines the efficiency, performance, size and cost of the drive systems.

Two of Infineon’s most widely admitted semiconductor technologies used in this space are:

CoolSiC, a wide bandgap Silicon Carbide (SiC) MOSFET-based technology and TRENCHSTOP IGBT, a mature and cost-effective IGBT technology.

While both serve the same purpose of converting and controlling electrical power, each comes with its strengths and limitations. This article presents a detailed and data-based comparative analysis of these two technologies for real world PDS applications, touching upon efficiency, efficiency, switching performance, thermal characteristics and total system cost.

Technology Overview

CoolSiC (SiC MOSFETs)-

CoolSiC MOSFET capitalize on the physical features of silicon carbide, the wide-bandgap material being known for its high thermal conductivity, high breakdown voltage, and low switching losses.

TRENCHSTOP IGBT-

In the TRENCHSTOP IGBT, trench and field-stop technologies coalesce to enable low conduction losses and fast switching at a reasonable price. In traditional motor drives, this time-tested silicon-based technology still capitalizes on robust operation and hence enjoys very good price-performance in the general-purpose drives.

Benchmark Setup: Simulations and Measurements

To evaluate the performance of the two technologies, Infineon had simulated and experimentally tested them on a typical PDS architecture:

Application: 3-phase, 400 V AC, 7.5 KW motor drive

Topology: 3-level inverter

Modulation Strategy: Sinusoidal PWM

Switching Frequency:

IGBT – 8KHz

CoolSic – 40 KHz

Cooling system: Passive heatsink, same ambient conditions

Load Profile: Constant speed, variable torque

Efficiency Comparison

Energy efficiency of the drives is a pressing concern, directly impacting energy bills and CO₂ emissions.

Technology	Peak Efficiency	Average Efficiency (Load range: 30-100%)
CoolSiC	98.5%	97.8%
TRENCHSTOP IGBT	96.8%	95.1%

 

Peak efficiency of the CoolSiC inverter is around 2 percent higher than that of the TRENCHSTOP solution. The higher switching frequency made for better waveform quality with lower harmonics, thus causing motor heating and system losses.

That means too much saving on energy by about 8 to 12% during the lifetime of a drive, specifically in high-duty applications such as HVAC, pumps and compressors.

Switching Performance and Losses

Being a unipolar device equipped with fast-switching features, CoolSiC turns out to be batter than an IGBT in turn on as well as turn off switching losses.

 

Parameter	CoolSiC	TRENCHSTOP IGBT
Turn-on loss	~0.3 mJ	~2.5 mJ
Turn-off loss	~0.2 mJ	~2.0 mJ
Total switching loss per cycle	~0.5 mJ	~4.5 mJ

 

The losses incurred by IGBT goes by the hour at high switching frequencies (exceeding 20 kHz); meanwhile, CoolSiC has linear loss scaling, giving it an edge in precision motor control applications.

Thermal Behavior and Heatsink Requirements

With less power loss, less is generated in thermal energy. This reduces the heat dissipation of the system, thus affecting the cooling requirement and the size of the system.

Metric	CoolSiC	TRENCHSTOP IGBT
Junction temperature	~80°C	~105°C
Required heatsink size	30% smaller	Baseline
Cooling system complexity	Simple/passive	More advanced

 

The size of the CoolSiC modules is significantly less. Also, this possibility opens the opportunity for fan-less or sealed enclosures, which is perhaps important in a dusty environment.

Impact on Motor Performance

The possibility of CoolSiC switching at higher frequencies brings about better sinusoidal output waveforms benefitting motor performance.

Motor Performance Aspect	CoolSiC	TRENCHSTOP IGBT
Acoustic noise	Lower	Higher
Torque ripple	Reduced	Noticeable
Motor temperature	Rise 8-10°C lower	Baseline

 

Using CoolSiC inverters will certainly increase motor efficiency and longevity, especially in applications involving servo drives or high-speed ones where fast transient response and high precision are required.

System-Level Cost Analysis

Through the true cost of a CoolSiC device is mostly on per unit basis, the story of the system cost is usually quite different.

Cost Element	CoolSiC	TRENCHSTOP
Semiconductor cost	Higher	Lower
Cooling system cost	Lower	Higher
System size and weight	Smaller	Larger
Total Cost of Ownership (TCO, 5 year)	~10–15% lower	Baseline

 

Indeed, CoolSiC’s greater energy efficiency in long duty cycles brings down operating costs and ensures a speedy ROI and better sustainability profile.

When to Use Which Technology?

Application Type	Recommended Technology	Justification
High-speed servo drives	CoolSiC	High frequency precision, low noise
HVAC systems	CoolSiC	Energy efficiency, compact size
Pumps and Compressors	CoolSiC	Lower energy consumption over time
Budget-sensitive drives	TRENCHSTOP IGBT	Cost-effective for <15KW systems
Harsh industrial environments	CoolSIC	High thermal tolerance, robust design

 

Conclusion:

There is no doubt that CoolSiC technology from Infineon sets the benchmark for the next generation of industrial drives in terms of efficiency, compactness and performance. In a high-performance, space-restricted or energy sensitive environment, SiC can make designs which are small, cool, sustainable and future-proof.

However, to TRENCHSTOP IGBT remains the preferred option where cost considerations dominate and the switching-frequency and thermal load requirements on the system are moderate.

With the trend of industrial systems towards smarter, greener and digitalized infrastructures, the usage of wide bandgap semiconductors such as CoolSiC can farther be expected to grow exponentially.

The post CoolSiC and IGBT Face Off in Industrial Power Drive Applications appeared first on ELE Times.

Electronics Standards and Certifications Leader Unveils New Vision and Mission for Supply Chain Harmonization and Advocacy, Releases Global Trade Flows Study

A new chapter begins for IPC as it officially becomes the Global Electronics Association, reflecting its role as the voice of the electronics industry. Guided by the vision of “Better electronics for a better world,” the Global Electronics Association (electronics.org) is dedicated to enhancing supply chain resilience and promoting accelerated growth through engagement with more than 3,000- member companies, thousands of partners, and dozens of governments across the globe.

“The Board’s support and approval of this transformation shows our collective recognition that the electronics industry has fundamentally changed. The Association has expanded well beyond its beginning in printed circuit boards – we’re enabling AI, autonomous vehicles, next-generation communications, and much more,” said Tom Edman, board chair of the Global Electronics Association and president and CEO of TTM Technologies. “As we chart our path forward with our new name, we will continue and elevate our efforts to build partnerships between governments and industries, foster new investment, drive innovation across the industry, and minimize disruptions in the electronics supply chain.”

As part of its new mission, the Association is increasing resources to strengthen advocacy, deepen industry insights, and enhance stakeholder communications — all aimed at advancing and elevating the electronics industry. To champion a resilient and growing supply chain, the Association represents the entire ecosystem of diverse subsectors that contribute to this complex industry.

“Electronics today are the backbone of all industries, which makes its supply chain crucial to economies, governments, and everyday life,” said Dr. John W. Mitchell, president and CEO of the Global Electronics Association. “Our new mission and vision position us to work more deeply with industry and our members globally to advocate for the importance of electronics in our continuously changing world.”

The Global Electronics Association will retain the IPC brand for the industry’s standards and certification programs, which are vital to ensure product reliability and consistency. The IPC Education Foundation is now known as the Electronics Foundation, continuing to focus on solving the talent challenges for the electronics industry.

Global Electronics Trade Flows 

The Global Electronics Association also released a trade flows study of the global electronics industry, which now represents more than $1 in every $5 of global merchandise trade. Key findings include:

• Electronics supply chains are more globally integrated than any other industry, surpassing even the automotive sector in cross-border complexity.
• Trade inputs like semiconductors and connectors now exceed trade in finished products such as smartphones and laptops, with global electronics trade totaling $4.5 trillion in 2023, including $2.5 trillion in components alone.
• Top exporters such as China, Vietnam, and India are among the fastest-growing importers of electronic inputs, underscoring the deep interdependence embedded in global electronics production.
• This mutual reliance challenges the viability of reshoring and decoupling strategies, as rising export powers depend on components from across the world.

Mitchell concluded: “Our trade flows analysis reinforces that resilience, not self-sufficiency, is the foundation of competitiveness in the electronics age. No single company or country can stand alone. The complexities of the electronics ecosystem require collaboration and partnership with others. The Global Electronics Association is here to help create a vital and thriving global electronics supply chain through industry, government, and stakeholder collaboration.”

Global Operations Supporting Entire Value Chain

The electronics value chain supported by the Global Electronics Association – from design to final product – encompasses original equipment manufacturers, semiconductors, printed circuit boards, assembly and manufacturing services, harnesses, materials, and equipment suppliers.

The post Global Electronics Association Debuts; New Name Elevates IPC’s 70-Year Legacy as Voice of $6 Trillion Electronics Industry appeared first on ELE Times.

Cost-efficient electric car battery tests in automotive development and production

For fast quality testing of battery cells, GÖPEL electronic has developed a powerful and quickly configurable battery test bench that features a modular design and high flexibility. The system consists of a central measurement technology unit with a computer and monitor, a control cabinet, and a unit with all the power electronics, and can be adapted to the user’s needs in a modular fashion.

The battery test bench offers a power range up to 500 kW and tests in the voltage range up to 1,000 V DC with test currents of up to 800 A DC. Insulation tests can be performed with up to 7.5 kV. Thanks to its regenerative capability, the test solution is also designed to be highly energy-efficient. The scope of services includes safety tests and functional tests. These tests evaluate the condition of the cells, the impedance of the battery under alternating current, and the alternating current dynamics of the cell, and detect critical defects. The test results provide information about electrochemical processes in the cell, aging effects, and internal resistance fluctuations across different frequencies.

As part of the functional test, the GÖPEL electronic test system communicates with the battery management system (BMS) via CAN-BUS. The battery is charged with a prescribed and defined charging pulse, discharged, and finally the “state of charge” is checked. After the battery is discharged, the energy required for this is fed back into the power grid by the test solution, ensuring high energy efficiency and cost savings.

At the end of the security and functional tests, all test results are automatically exported to a database in the production department in individually configurable reports. Before delivery, the system checks the quiescent current to ensure that no unnecessary consumers can drain the battery. In addition, the desired state of charge is ensured, the final sensor data is read out, error memory entries are compared, and finally, the end customer software is flashed onto the battery.

The post Quickly configurable battery test bench for security and function tests on automotive high-voltage batteries appeared first on ELE Times.