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Tachometry, the measurement of the speed of spin of rotating objects, is a common application. Some of those objects, however, have quirky aspects that make them extra interesting, even scary. One such category includes outdoor noncontact sensing of large, fast, and potentially hazardous objects like windmills, waterwheels, and aircraft propellers. The tachometer peripheral illustrated in Figure 1 implements optical sensing using available ambient light that provides a logic-level signal to a microcontroller digital input and is easily adaptable to different light levels and mechanical contexts.

Figure 1 Logarithmic contrast detection accommodates several decades of variability in available illumination.

Wow the engineering world with your unique design: Design Ideas Submission Guide

Safe sensing of large rotating objects is best done from a safe (large) distance and passive available-light optical methods are the obvious solution. Unless elaborate lens systems are used in front of the detector, the optical signal is apt to have a relatively low-amplitude due to the tendency of the rotating object (propeller blade, etc.) to fill only a small fraction of the field of view of simple detectors. This tachometer (Figure 1) makes do with an uncomplicated detector (phototransistor Q1 with a simple light shield) by following the detector with a high-gain, AC coupled, logarithmic, threshold detector.

Q1’s photocurrent produces a signal across Q2 and Q3 that varies by ~500 µV pp for every 1% change in incident light intensity that’s roughly (e.g. neglecting various tempcos) given by:

V ~ 0.12 log10(Iq1/Io)
Io ~ 10 fA

This approximate log relationship works over a range of nanoamps to milliamps of photocurrent and is therefore able to provide reliable circuit operation despite several orders of magnitude variation in available light intensity. A1 and the surrounding discrete components comprise high gain (80 dB) amplification that presents a 5-Vpp square-wave to the attached microcontroller DIO pin.

Programming of the I/O pin internal logic for pulse counting allows a simple software routine to divide the accumulated count by the associated time interval and by the number of counted optical features of the rotating object (e.g., number of blades on the propeller) to produce an accurate RPM reading.

Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

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Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced that its high-power GaNSafe ICs have achieved automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s next inflection into the automotive market, it is reckoned...

The market for electric vehicles continues to gather pace with a strong volume growth of both battery electric vehicles and plug-in hybrid electric vehicles. The share of electric vehicles produced is expected to see double-digit growth by 2030 with a share of around 45 percent compared to 20 percent in 2024. Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications.

The EDT3 and RC-IGBT bare dies have been engineered to deliver high-quality and reliable performance, empowering customers to create custom power modules. The new generation EDT3 represents a significant advancement over the EDT2, achieving up to 20 percent lower total losses at high loads while maintaining efficiency at low loads. This achievement is due to optimizations that minimize chip losses and increase the maximum junction temperature, balancing high-load performance and low-load efficiency. As a result, electric vehicles using EDT3 chips achieve an extended range and reduce energy consumption, providing a more sustainable and cost-effective driving experience.

“Infineon, as a leading provider of IGBT technology, is committed to delivering outstanding performance and reliability”, says Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon Technologies. “Leveraging our steadfast dedication to innovation and decarbonization, our EDT3 solution enables our customers to attain ideal results in their applications.”

The EDT3 chipsets, which are available in 750 V and 1200 V classes, deliver high output current, making them well-suited for main inverter applications in a diverse range of electric vehicles, including battery electric vehicles, plug-in hybrid electric vehicles, and range-extended electric vehicles. Their reduced chip size and optimized design facilitate the creation of smaller modules, consequently leading to lower overall system costs. Moreover, with a maximum virtual junction temperature of 185°C and a maximum collector-emitter voltage rating of up to 750 V and 1200 V, these devices are well-suited for high-performance applications, enabling automakers to design more efficient and reliable powertrains that can help extend driving range and reduce emissions.

“Infineon, as Leadrive’s primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,” said Dr. Ing. Jie Shen, Founder and General Manager of Leadrive. “The latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.”

The 1200 V RC-IGBT elevates performance by integrating IGBT and diode functions on a single die, delivering an even higher current density compared to separate IGBT and diode chipset solutions. This advancement translates into a system cost benefit, attributed to the increased current density, scalable chip size, and reduced assembly effort.

Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK Drive G2 automotive power module, delivering enhanced performance and capabilities across the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, enhanced ease of use, and new features such as an integration option for next-generation phase current sensors and on-chip temperature sensing, contributing to system cost improvements.

All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors.

The post Infineon introduces new generation of powerful and energy- efficient IGBT and RC-IGBT devices for electric vehicles appeared first on ELE Times.

Made a full adder with CSD15380F3 N channel FETs and 0402 resistors. I probably won't actually get it made. submitted by /u/Ok_Arachnid2186 [link] [comments]

Power semiconductor product supplier Diodes Inc of Plano, TX, USA has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC-to-DC and AC-to-DC conversion, renewable energy, data centers (especially those that process heavy artificial intelligence (AI) workloads), and industrial motor drives...

NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — is to provide a comprehensive update to its shareholders regarding its newly formulated business model canvas, which encompasses two synergistic key business lines...

Microcontrollers (MCUs) have undergone a remarkable transformation, evolving from basic controllers into specialized processing units capable of handling increasingly complex tasks. Once confined to simple command execution, they now support diverse functions that require rapid decision-making, heightened security, and low-power operation.

Their role has expanded across industries, from managing complex control systems in industrial automation to supporting safety-critical vehicle applications and power-efficient operations in connected devices.

As MCUs take on greater workloads, the conventional bus-based interconnects that once sufficed now limit performance and scalability. Adding artificial intelligence (AI) accelerators, machine learning technology, reconfigurable logic, and secure processing elements demands a more advanced on-chip communication infrastructure.

To meet these needs, designers are adopting network-on-chip (NoC) architectures, which provide a structured approach to data movement, alleviating congestion and optimizing power efficiency. Compared to traditional crossbar-based interconnects, NoCs reduce routing congestion through packetization and serialization, enabling more efficient data flow while reducing wire count.

This is how efficient packetization works in network-on-chip (NoC) communications. Source: Arteris

MCU vendors adopt NoC interconnect

Many MCU vendors relied on proprietary interconnect solutions for years, evolving from basic crossbars to custom in-house NoC implementations. However, increasing design complexity encompassing AI/ML integration, security requirements, and real-time processing has made these solutions costly and challenging to maintain.

Moreover, as advanced packaging techniques and die-to-die interconnects become more common, maintaining in-house interconnects has grown increasingly complex, requiring constant updates for new communication protocols and power management strategies.

To address these challenges, many vendors are transitioning to commercial NoC solutions that offer pre-validated scalability and significantly reduce development overhead. For an engineer designing an AI-driven MCU, an NoC’s ability to streamline communication between accelerators and memory can dramatically impact system efficiency.

Another major driver of this transition is power efficiency. Unlike general-purpose systems-on-chip (SoCs), many MCUs must function within strict power constraints. Advanced NoC architectures enable fine-grained power control through power domain partitioning, clock gating, and dynamic voltage and frequency scaling (DVFS), optimizing energy use while maintaining real-time processing capabilities.

Optimizing performance with NoC architectures

The growing number of heterogeneous processing elements has placed unprecedented demands on interconnect architectures. NoC technology addresses these challenges by offering a scalable, high-performance alternative that reduces routing congestion, optimizes power consumption, and enhances data flow management. NoC enables efficient packetized communication, minimizes wire count, and simplifies integration with diverse processing cores, making it well-suited for today’s MCU requirements.

By structuring data movement efficiently, NoCs eliminate interconnect bottlenecks, improving responsiveness and reducing die area. So, the NoC-based designs achieve up to 30% higher bandwidth efficiency than traditional bus-based architectures, improving overall performance in real-time systems. This enables MCU designers to achieve higher bandwidth efficiency and simplify integration, ensuring their architectures remain adaptable for advanced applications in automotive, industrial, and enterprise computing markets.

Beyond enhancing interconnect efficiency, NoC architectures support multiple topologies, such as mesh and tree configurations, to ensure low-latency communication across specialized processing cores. Their scalable design optimizes interconnect density while minimizing congestion, allowing MCUs to handle increasingly complex workloads. NoCs also improve power efficiency through modularity, dynamic bandwidth allocation, and serialization techniques that reduce wire count.

By implementing advanced serialization, NoC architectures can reduce the number of interconnect wires by nearly 50%, as shown in the above figure, lowering overall die area and reducing power consumption without sacrificing performance. These capabilities enable MCUs to sustain high performance while balancing power constraints and minimizing die area, making NoC solutions essential for next-generation designs requiring real-time processing and efficient data flow.

In addition to improving scalability, NoCs enhance safety with features that help toward achieving ISO 26262 and IEC 61508 compliance. They provide deterministic communication, automated bandwidth and latency adjustments, and built-in deadlock avoidance mechanisms. This reduces the need for extensive manual configuration while ensuring reliable data flow in safety-critical applications.

Interconnects for next-generation MCUs

As MCU workloads grow in complexity, NoC architectures have become essential for managing high-bandwidth, real-time automation, and AI inference-driven applications. Beyond improving data transfer efficiency, NoCs address power management, deterministic communication, and compliance with functional safety standards, making them a crucial component in next-generation MCUs.

To meet increasing integration demands, ranging from AI acceleration to stringent power and reliability constraints, MCU vendors are shifting toward commercial NoC solutions that streamline system design. Automated pipelining, congestion-aware routing, and configurable interconnect frameworks are now key to reducing design complexity while ensuring scalability and long-term adaptability.

Today’s NoC architectures optimize timing closure, minimize wire count, and reduce die area while supporting high-bandwidth, low-latency communication. These NoCs offer a flexible approach, ensuring that next-generation architectures can efficiently handle new workloads and comply with evolving industry standards.

Andy Nightingale, VP of product management and marketing at Arteris, has over 37 years of experience in the high-tech industry, including 23 years in various engineering and product management positions at Arm.

 

Related Content

• SoC Interconnect: Don’t DIY!
• What is the future for Network-on-Chip?
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• SoC design: When is a network-on-chip (NoC) not enough
• Network-on-chip (NoC) interconnect topologies explained

The post How NoC architecture solves MCU design challenges appeared first on EDN.

India is accelerating its semiconductor ambitions, aiming to secure 10% of global chip demand by 2030. Central to this strategy is the India Semiconductor Mission (ISM), launched in December 2022 with an allocation of ₹76,000 crore, designed to foster a sustainable semiconductor ecosystem and reduce reliance on imports.

In a significant development, Tata Electronics and Taiwan’s PSMC have announced a joint venture to establish India’s first 12-inch wafer fabrication facility in Dholera, Gujarat. With an investment of $11 billion, this project is expected to generate over 20,000 jobs and focus on manufacturing power management ICs, display driver ICs, microcontrollers, and high-performance computing logic components.

The 2025 budget reflects the government’s commitment, doubling the allocation for chip initiatives to ₹2,499.96 crore for FY26. This includes increased funding for compound semiconductors, sensors, and chip assembly/testing units, with a 56% rise to ₹3,900 crore, and nearly doubling the allocation for the design-linked incentive (DLI) to ₹200 crore.

Strategic partnerships with countries like Singapore, the US, Japan, and Taiwan are also being pursued to enhance technology transfer, skill development, and foreign direct investment. These efforts position India as a key player in the global semiconductor supply chain, aligning with the ‘China Plus One’ strategy amid evolving geopolitical dynamics.

The post India Aims to Capture 10% of Global Chip Demand by 2030 appeared first on ELE Times.

According to a recent report by NITI Aayog, the average cost of semiconductor chips in vehicles is projected to rise from $600 to $1,200 by 2030. This increase is attributed to the growing integration of advanced technologies in automobiles, such as electric powertrains, Advanced Driver Assistance Systems (ADAS), Internet of Things (IoT) connectivity, and autonomous driving capabilities. As vehicles become more connected and intelligent, the demand for sophisticated semiconductor chips escalates, leading to higher costs.

This trend signifies a broader transformation in the automotive industry, shifting from traditional fuel-based vehicles to electric vehicles (EVs) equipped with next-generation features. The incorporation of these technologies necessitates more complex and expensive semiconductor components, thereby increasing the overall cost per vehicle. The report underscores the pivotal role of electronics and semiconductors in modern vehicles, highlighting the need for the automotive sector to adapt to these technological advancements.

As India positions itself as a significant player in the global semiconductor market, this development presents both challenges and opportunities. The rising demand for high-tech components in vehicles underscores the importance of strengthening domestic semiconductor manufacturing capabilities to meet future needs.

The post Cost of Semiconductor Chips per Vehicle to Double by 2030: NITI Aayog appeared first on ELE Times.

U.S. semiconductor equipment manufacturers are facing potential annual losses exceeding $1 billion due to new tariffs proposed by President Donald Trump’s administration. Major companies like Applied Materials, Lam Research, and KLA could each incur losses of approximately $350 million, while smaller firms such as Onto Innovation may also experience significant financial impacts.

These projected losses stem from anticipated declines in overseas sales of less advanced equipment, increased costs from sourcing alternative components, and expenses related to tariff compliance. The Trump administration has temporarily paused previously announced reciprocal tariffs but is considering further actions to promote domestic manufacturing, including initiating an import investigation.

This development adds to the challenges already faced by the industry following former President Biden’s export controls aimed at limiting advanced chip manufacturing in China, which have prompted China to bolster its domestic semiconductor capabilities. Industry representatives have been in discussions with U.S. officials, emphasizing the need to consider the broader implications of these tariffs on the global semiconductor supply chain.

The post US Tariffs Could Cost Chip Equipment Makers Over $1 Billion Annually appeared first on ELE Times.

As part of the program announced in October 2024, STMicroelectronics of Geneva, Switzerland has disclosed further plans to reshape its global manufacturing footprint that will “future proof our integrated device manufacturer model with strategic assets in Europe and improve our ability to innovate even faster,” according to president & CEO Jean-Marc Chery...

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The term “aftermarket” finds most frequent use, in my experience, in describing hardware bought by owners to upgrade vehicles after they initially leave the dealer lot: audio system enhancements, for example, or more powerful headlights. But does it apply equally to drone accessories? Sure (IMHO, of course). For what purposes? Here’s what I wrote last October:

Regardless of whether you fly recreationally or not, you also often (but not always) need to register your drone(s), at $5 per three-year timespan (per-drone for commercial operators, or as a lump sum for your entire drone fleet for recreational flyers). You’ll receive an ID number which you then need to print out and attach to the drone(s) in a visible location. And, as of mid-September 2023, each drone also needs to (again, often but not always) support broadcast of that ID for remote reception purposes…

DJI, for example, firmware-retrofitted many (but not all) of its existing drones with Remote ID broadcast capabilities, along with including Remote ID support in all (relevant; hold that thought for next time) new drones. Unfortunately, my first-generation Mavic Air wasn’t capable of a Remote ID retrofit, or maybe DJI just didn’t bother with it. Instead, I needed to add support myself via a distinct attached (often via an included Velcro strip) Remote ID broadcast module.

I’ll let you go back and read the original writeup to discern the details behind my multiple “often but not always” qualifiers in the previous two paragraphs, which factor into one of this month’s planned blog posts. But, as I also mentioned there, I ended up purchasing Remote ID broadcast modules from two popular device manufacturers (since “since embedded batteries don’t last forever, don’cha know”), Holy Stone and Ruko. And…

I also got a second Holy Stone module, since this seems to be the more popular of the two options) for future-teardown purposes.

The future is now; here’s a “stock” photo of the device we’ll be dissecting today, with dimensions of 1.54” x 1.18” x 0.51”/3.9 x 3 x 1.3 cm and a weight of 13.9 grams (14.2 grams total, including Velcro mounting strips) and a model number variously reported as 230218 and HSRID01:

Some outer box shots to start (I’ve saved you from boring photos of the blank sides):

And opening the box, its contents, with our victim in the middle, within a cushioned envelope:

At bottom is the user manual; I can’t find a digital copy of it on the Holy Stone support site, but Manuals+ hosts it in both HTML and PDF formats. You can also find this documentation (among other interesting info) on the FCC website; the FCC ID, believe it or not, is 2AJ55HOLYSTONEBM. At top is the Velcro mounting pair, also initially cushion-packaged (for unknown reasons):

And now, fully freed from its prior captivity, is our patient, as-usual accompanied by a 0.75″ (19.1 mm) diameter U.S. penny for size comparison purposes (once again, I’ve intentionally saved you from exposure to boring blank-side shots):

A note on this next one; the USB-C port shown is used to recharge the embedded battery:

Prior to disassembly, I plugged the device into my Google Pixel Buds Pro earbuds charging cable (which has USB-C connectors on both ends) to test charge functionality, but the left-side battery indicator LED on the front panel remained un-illuminated. That said, when I punched the device’s front panel power switch, it came to life. The result wasn’t definitive; the battery could have been precharged on the assembly line, with the charging circuitry inside still inoperable.

But, on a hunch, I then instead plugged it into the power cable for my Google Chromecast with Google TV, which has USB-A on the power-source end, and the charge-status LED lit up and began blinking, indicative of charging in progress. What’s with Chinese-sourced gear and its non-cognizance of USB Power Delivery negotiation protocols? The user manual shows and discusses an “original charging cable” with USB-A on one end which, had it actually been included as inferred, would have constrained the possible charging-source options. Just sayin’.

Speaking of “circuitry inside,” note the visible screw head at the bottom of this next shot:

That’s, I suspect, our pathway inside. Before we dive in, however, what should we expect to see there, circuitry-wise? Obviously there’s a battery, likely Li-ion in formulation, along with the aforementioned associated charging circuitry for it. There’s also bound to be some sort of system SoC, plus both volatile (RAM) and nonvolatile memory, the latter holding both the program code and user-programmable FAA-assigned Remote ID. Broadcast of that ID can occur over Bluetooth, Wi-Fi or both, via an accompanying antenna. And for geolocation purposes, there’ll need to be a GPS subsystem, comprising both another antenna and a receiver.

Now that the stage is set, let’s get inside, after both removing the previously shown screw and slicing through the serial number sticker on one side:

Voila:

The wire in the lower right corner is, I suspect, the wireless communications antenna. Given its elementary nature, along with the lack of mention of Wi-Fi in the product documentation, I’m guessing it’s Bluetooth-only. To its left is the square mostly-tan GPS antenna. In the middle is the multifunction switch (power cycling and user (re)configuration). Above it are the two LEDs, for power/charging status (left) and current operating mode (right).

And on both sides of it are Faraday cages, the lids of which we’ll need to rip off (hold that thought) before we can further investigate their contents.

The PCB subsequently lifts right out of the other (back) case half:

revealing the “pouch” battery adhesive-attached to the PCB’s other side:

Peel the battery away (revealing a near-blank PCB underneath).

Peel off the tape, and the battery specs (3.7V, 150mAh, 0.55Wh…why do battery manufacturers frequently feel the need to redundantly provide both of the latter two? Can’t folks multiply anymore?) come into view:

Back to the front of the PCB, post-removal of the two Faraday cages’ tops, as foreshadowed previously:

Now fully visible is the USB-C connector, alongside a rubberized ring that had been around it when fully assembled. As for what’s inside those now-mangled Faraday cages, let’s zoom in:

The landscape-dominant IC within the left-located Faraday cage, unsurprisingly given its GPS antenna proximity, is Bekin’s BK1661, a “fully integrated single-chip L1 GNSS [author note: Global Navigation Satellite System] solution” that, as the acronym infers, supports not only GPS L1 but “Beidou B1, Galileo E1, QZSS L1, and GLONASS G1,” for worldwide usage.

The one to the right, on the other hand, was a mystery (although, given its antenna proximity, I suspected it handled Bluetooth transceiver functionality, among other things) until I came across an enlightening Reddit discussion. The company logo mark on the top of the chip is a combination of the letters J and L. And the part number underneath it is:

BP0E950-21A4

Here’s an excerpt of the initial post in the Reddit discussion thread, titled “How to identify JieLi (JL/π) bluetooth chips”:

If you like to open things, particularly bluetooth audio devices, you may have seen chips from manufacturers like Qualcomm, Bestechnic (BES), Airoha, Vimicro WX, Beken, etc.; but cheaper devices have those mysterious chips marked with A3 or AB (from Bluetrum), or those with the JL or “pi” logo (from JieLi).

Bluetrum and JieLi chips have a printed code (like most IC chips), but those codes don’t match any results on Google or the manufacturer’s websites. Why does this happen? Well, it looks like the label on those chips is specific to the firmware they’re running, and there’s no way to know which chip it is exactly (unless the manufacturer of your bluetooth device displays that information somewhere on the package).

I was recently looking at the datasheet for some JieLi chips I have lying around, and noticed something interesting: on each chip the label is formatted like “abxxxxxxx-YYY”, “acxxxxx-YYYY” or similar, and the characters after the “-” look like they indicate part of the model number of the IC.

 …

In conclusion, if you find a JL chip inside your device and the label does not show any results, use the last characters (the ones after the “-“) and add ac69 or ac63 at the beginning (those are the series of the chip, like AC69xx or AC63xx. There are more series that I don’t remember, so if those codes don’t work for you, try searching for others).

 …

Also, if you find a chip with only one number before the letter in the character group after the “-“, add a 0 before it and then add a series code at the beginning. (For example: 5A8 -> 05A8 -> AC6905A)

By doing so you will probably find the pinout and datasheet of your bluetooth IC.

 Based on the above, what I think we have here is the AC321A4 RISC-based microcontroller with Bluetooth support from Chinese company ZhuHai JieLi Technology. To give you an idea of how much (or, perhaps more accurately, little) it costs, consider the headline of an article I came across on a similar product from the same company, “JieLi Tech AC6329C4 is Another Low Cost MCU but with Bluetooth 5.0 Support.” Check out the price tag in the associated graphic:

That said, an AC6921A also exists from the company, although it seems to be primarily intended for stereo audio Bluetooth, so…

That’s what I’ve got for today, folks. Sound off in the comments with your thoughts!

—Brian Dipert is the Editor-in-Chief of the Edge AI and Vision Alliance, and a Senior Analyst at BDTI and Editor-in-Chief of InsideDSP, the company’s online newsletter.

Related Content

• The (more) modern drone: Which one(s) do I now own?
• LED headlights: Thank goodness for the bright(nes)s
• Drone regulation and electronic augmentation
• Google’s Chromecast with Google TV: Dissecting the HD edition

The post Aftermarket drone remote ID: Let’s see what’s inside thee appeared first on EDN.

• The industry’s first high-speed, single-chip lidar laser driver can detect objects faster and more accurately than discrete solutions.
• New high-performance automotive bulk acoustic wave (BAW)-based clocks are 100 times more reliable than quartz-based clocks, enabling safer operation.
• Automotive manufacturers can enhance front and corner radar sensor functions with TI’s newest millimeter-wave (mmWave) radar sensor.

Texas Instruments (TI) introduced a new portfolio of automotive lidar, clock and radar chips to help automakers transform vehicle safety by bringing more autonomous features to a wider range of cars. TI’s new LMH13000, the industry’s first integrated high-speed lidar laser driver, delivers ultra-fast rise time to improve real-time decision-making. The industry’s first automotive BAW-based clocks, the CDC6C-Q1 oscillator and LMK3H0102-Q1 and LMK3C0105-Q1 clock generators, improve advanced driver assistance system reliability. Addressing evolving ADAS needs, TI’s new AWR2944P mmWave radar sensor offers advanced front and corner radar capabilities.

“Our latest automotive analog and embedded processing products help automakers both meet current safety standards and accelerate toward a collision-free future,” said Andreas Schaefer, TI general manager, ADAS and Infotainment. “Semiconductor innovation delivers the reliability, precision, integration and affordability automakers need to increase vehicle autonomy across their entire fleet.”

Real-time decision-making with 30% longer distance measurements

A crucial technology for the future of safe autonomous vehicles, lidar provides a detailed 3D map of the driver’s surroundings. This enables vehicles to accurately detect and quickly react to obstacles, traffic and road conditions to improve real-time decision-making. TI’s new LMH13000 is the industry’s first integrated high-speed laser driver to deliver an ultra-fast 800ps rise time, achieving up to 30% longer distance measurements than discrete solutions. With integrated low-voltage differential signaling (LVDS), complementary metal-oxide semiconductor and transistor-transistor-logic control signals, the device eliminates the need for large capacitors or additional external circuitry. This integration also supports an average 30% reduction in system costs while reducing solution size by four times, empowering design engineers to discretely mount compact, affordable lidar modules in more areas and across more vehicle models

As lidar technology reaches higher output currents, vast variations in pulse duration over temperature make it challenging to meet eye safety standards. TI’s LMH13000 laser driver provides up to 5A of adjustable output current with only 2% variation across its -40C to 125C ambient temperature range, compared to discrete solutions that can have up to 30% variation. The device’s short pulse-width generation and current control enable the system to meet Class 1 U.S. Food and Drug Administration eye safety standards.

Design a reliable ADAS with the industry’s first automotive BAW-based clocks

Electronics in ADAS and in-vehicle infotainment systems must work reliably while facing temperature fluctuations, vibrations and electromagnetic interference. With TI’s BAW technology benefits, the new CDC6C-Q1 oscillator and LMK3H0102-Q1 and LMK3C0105-Q1 clock generators increase reliability by 100 times compared to traditional quartz-based clocks, with a failure-in-time rate of 0.3. Enhanced clocking precision and resilience in harsh conditions enable safer operation, cleaner data communication, and higher-speed data processing across next-generation vehicle subsystems.

Additionally, the company unveiled a new front and corner radar sensor, the AWR2944P, building on TI’s widely adopted AWR2944 platform. The new radar sensor’s enhancements improve vehicle safety by extending detection range, improving angular accuracy, and enabling more sophisticated processing algorithms. Key enhancements include:

• An improved signal-to-noise ratio.
• Increased computational capabilities.
• A larger memory capacity.
• An integrated radar hardware accelerator that allows the microcontroller and digital signal processor to execute machine learning for edge artificial intelligence applications.

TI’s new automotive lidar, clock and radar solutions build on the company’s commitment to helping engineers design adaptable ADAS for a safer, more automated driving experience.

The post TI enables automakers to advance vehicle autonomy and safety with new chips in its automotive portfolio appeared first on ELE Times.

On 22 April, Tokyo-based Mitsubishi Electric Corp will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances...

In an exclusive interaction with ELE Times, Jaya Singh, Director – MSP WW Development at Texas Instruments, delves into the breakthrough innovations behind the world’s smallest MCU. She highlights how TI’s advanced packaging technologies, global collaboration, and the pivotal role of the India R&D team enabled unprecedented miniaturization without compromising performance or efficiency. This conversation also explores TI’s strategic roadmap, real-world applications, and the future of ultra-low-power microcontrollers in next-gen electronics.

Jaya Singh, Director – MSP WW Development at Texas Instruments

ELE Times: What breakthrough technologies and design innovations enabled Texas Instruments to develop the world’s smallest MCU without compromising performance, power efficiency, or functionality?

Jaya Singh: Despite its tiny size, the world’s smallest MCU offers robust features, including 16KB of flash memory, a 12-bit ADC with three channels, three timers, and 6 GPIOs. With an Arm® Cortex®-M0+ CPU running at 24 MHz, it empowers engineers to create compact, power-efficient designs without compromising on performance.

Texas Instruments achieved this by leveraging advanced wafer chip-scale packaging (WCSP) technology in combination with feature optimization efforts. WCSP offers the smallest possible form factor by directly connecting an array of solder balls to the silicon die, eliminating the need for a larger package. This results in a package size virtually equal to that of the silicon itself.

By fitting eight solder balls into a compact 1.38 mm² footprint, TI enabled higher feature integration per square millimeter. This miniaturization was further complemented by a deep understanding of customer needs, allowing TI to deliver a highly optimized embedded solution that balances size, cost, and functionality.

ELE Times: What role did TI India R&D team play in this development? Can you highlight their key contributions, collaboration with the global team, and the specific engineering challenges they helped overcome?

Jaya Singh: The TI India R&D team was involved in the complete lifecycle of the product, playing an instrumental role in the end-to-end development of the world’s smallest MCU. The India team played a vital role in defining the product specifications and ensuring a highly cost-optimized and efficient solution.

The India team collaborated closely with global teams, which enabled the integration of deep technical expertise with real-world application insights. This partnership helped overcome key engineering challenges, such as achieving ultra-small packaging without sacrificing functionality or reliability.

In parallel, the India team focused on tailoring the MCU to address the specific needs of customers. This included optimizing features such as memory configuration, analog peripherals and power efficiency to align with the demands of embedded systems used in industrial, automotive and consumer electronics sectors, such as those in India.

By combining technical leadership with market localization, the TI India R&D team ensured that this innovation not only set a global benchmark but also delivered practical value across key applications.

ELE Times: Cost optimization is critical in semiconductor design. How did TI achieve the right balance between affordability, energy efficiency, and high performance in this ultra-miniature MCU?

Jaya Singh: Achieving the optimal balance between cost, efficiency and performance required close collaboration across TI’s global engineering, design and manufacturing teams. This cross-functional effort enabled a holistic approach to cost optimization, ensuring that every element of the product was purposefully engineered for value.

Key innovations in manufacturing technology, packaging and circuit design played a pivotal role in making the MCU both compact and powerful.

ELE Times: What are some real-world applications where this MCU will be a game-changer, particularly in industries like wearables, medical devices, and ultra-low-power IoT?

Jaya Singh: As electrical circuits and system designs become smaller, board space is increasingly considered a scarce and valuable resource. TI’s MSPM0C1104 WCSP MCU enables innovation in size-constrained applications such as personal electronics, medical wearables, and factory automation. Using an ultra-small, feature-rich MCU in high-density designs enables engineers to design solutions with more room for additional components and larger batteries for increased operational lifetimes.

ELE Times: How does this innovation fit into TI’s broader roadmap for ultra-low-power and miniaturized semiconductor solutions, and what can we expect next in this space?

Jaya Singh: Since the launch of our Arm® Cortex®-M0+ MCU portfolio in 2023, Texas Instruments has rapidly expanded its offering to over 100 devices for industrial, medical and automotive systems. The portfolio offers scalable configurations of on-chip analog peripherals and a range of computing options, including other small packages to help reduce board size and bill of materials. We support the portfolio with a comprehensive ecosystem of hardware and software resources, to help engineers reduce system cost and complexity while meeting diverse application needs. In the future, we plan to continue expanding the portfolio to meet the growing needs of the industry.

The introduction of the world’s smallest MCU demonstrates TI’s commitment to developing small packages across our embedded processing and analog portfolio that help our customers innovate in size-constrained applications. The trend of smaller, more compact design requirements will continue to grow. Packaging advancements enable engineers to integrate more functionality into smaller form factors while maintaining high levels of precision and performance, enhancing user experiences and creating new design possibilities.

TI’s investments in internal manufacturing and technology have given the company greater control of its entire manufacturing process, while also lowering costs. By optimizing packaging solutions for specific application needs, TI can explore new design approaches and technologies while achieving the highest levels of quality and reliability – driving innovation and meeting changing industry demands.

ELE Times: With semiconductor technology constantly evolving, what unique challenges and opportunities do you foresee in pushing the boundaries of MCU miniaturization further?

Jaya Singh: With each new generation of electronics, consumers expect continuous advancements in size and functionality. To meet these demands, engineers are challenged to add new features while maintaining or decreasing their products’ current form factors. TI is committed to helping our customers overcome their design challenges and get to market quickly with MCUs that are scalable, cost-optimized and easy-to use.

The post Pushing the Boundaries of Miniaturization with Texas Instruments’ New MCU appeared first on ELE Times.

As the electric vehicle (EV) revolution accelerates globally, Battery Management Systems (BMS) have emerged as the unsung heroes—quietly orchestrating the health, performance, and safety of advanced battery packs that power the next generation of mobility as well as energy storage solutions.

With the global shift toward high-voltage architectures, solid-state chemistries, and connected ecosystems, BMS technology is undergoing a profound transformation. Today’s systems are not just passive controllers—they are intelligent, predictive, cyber-resilient platforms enabling faster charging, longer life, and circular energy applications.

In this feature, ELE Times explores the frontiers of BMS development, with a focus on innovations in ultra-high-voltage support, real-time AI integration, cybersecurity, thermal breakthroughs, and global standardization. Industry leaders like Delta Electronics offer valuable insights into the technological shifts shaping this pivotal domain.

From Lithium-Ion to Solid-State and Sodium-Ion: The Chemistry-Agnostic Evolution of BMS

Next-gen battery chemistries like solid-state and sodium-ion promise higher energy densities, safer designs, and reduced reliance on scarce materials. However, their diverse electrochemical properties require adaptable and highly intelligent BMS platforms.

Delta Electronics, an industry leader in power and thermal solutions, is playing a key role in enabling this transition. Their latest BMS innovations are designed to be chemistry-agnostic, capable of managing not only conventional lithium-ion batteries but also emerging formats.

“Our advanced BMS platforms are optimized for ultra-high-voltage architectures—800V and beyond,” Rajesh Kaushal, Energy Infrastructure & Industrial Solutions (EIS) Business Group Head, India & SAARC, Delta Electronics, shared. “This is critical for enabling faster charging and higher drivetrain efficiency. We’re also leveraging adaptive control algorithms and AI-driven analytics to achieve precise thermal management, voltage control, and SOC estimation across various battery chemistries, including solid-state and sodium-ion.”

AI at the Edge: Unlocking Real-Time Diagnostics and Predictive Intelligence

BMS systems are becoming smart, self-optimizing, and responsive—thanks to AI and edge computing.

Delta’s integration of AI-driven algorithms and edge computing empowers its BMS to perform real-time cell-level diagnostics, dynamically optimize charging protocols, and conduct predictive analytics for early fault detection and lifecycle management. This evolution from reactive to predictive management allows early detection of anomalies, degradation trends, and potential failure points.

“By processing battery data at the edge, our BMS platforms reduce latency and improve responsiveness,” Delta noted. “This ensures superior energy distribution, thermal safety, and charging efficiency—even under dynamic operating conditions.”

The result is a system that adapts on the fly—extending battery life, maximizing range, and enhancing user safety.

Cybersecurity and Functional Safety in the Era of OTA and Vehicle Connectivity

As EVs become increasingly connected, over-the-air (OTA) updates and cloud integration introduce new vectors for cybersecurity risks. Securing the BMS, which has access to critical vehicle and battery functions, becomes a top priority.

Leading system developers are engineering their BMS architectures in compliance with ISO 21434 for automotive cybersecurity and ISO 26262 to meet stringent functional safety requirements. Robust hardware encryption, secure boot mechanisms, and real-time anomaly detection algorithms are now standard features in next-gen BMS platforms.

Delta is among the innovators focusing on this dual mandate of cybersecurity compliance and functional reliability, ensuring that their BMS solutions remain resilient against evolving threat landscapes.

Enabling Ultra-Fast Charging with Intelligent Thermal Management

With growing consumer demand for sub-10 minute fast charging, thermal stress becomes a critical bottleneck. Charging a large battery at high currents within minutes can induce rapid temperature rise, risking thermal runaway if not managed effectively.

Breakthroughs in active liquid cooling, phase-change materials, and smart heat sinks are being integrated directly into the BMS ecosystem. With AI-assisted thermal forecasting, the system can predict potential heat buildup and adjust the charging cycle in advance to prevent overheating.

Delta is investing in advanced cooling technologies that work in tandem with AI-driven thermal models. “Thermal runaway mitigation is not just about removing heat—it’s about knowing where and when to intervene,” Mr. Kaushal explained.

Balancing Act: Improving Efficiency Through Active Balancing and Real-Time Impedance Tracking

Traditional passive cell balancing wastes energy as heat, especially in large battery systems. New-generation BMS solutions are increasingly adopting active balancing to redistribute charge dynamically and efficiently across cells.

Coupled with real-time impedance tracking, these systems can detect early signs of cell aging or imbalance, allowing preemptive corrections to preserve performance and extend battery lifespan.

Delta’s BMS leverages both techniques, resulting in better thermal uniformity, extended range, and improved charging cycles over the battery’s lifetime.

Towards a Circular Economy: Interoperability and Second-Life Readiness

As the EV ecosystem expands beyond traditional use cases, modern BMS architectures are being reimagined to accommodate battery swapping, second-life deployment in stationary energy storage, and the broader goals of circular economy frameworks. This requires a high degree of interoperability, with standardized communication protocols and modular software layers.

Forward-looking companies are aligning with global standards like IEC 62984 and OpenBMS frameworks, ensuring that their systems can seamlessly integrate into a variety of energy use cases—from grid storage to micro-mobility.

Delta is actively pursuing interoperability across its BMS product lines, supporting modular deployment in vehicle and stationary storage contexts alike.

Conclusion: BMS as the Central Nervous System of Electrification

The future of mobility rests not just on battery cells but on the intelligence that governs them. As BMS platforms become more adaptive, predictive, and secure, they are evolving into the central nervous systems of modern EVs and energy storage systems.

With pioneering work by companies like Delta, the industry is on track to support higher voltages, faster charging, and longer battery life—while embracing sustainability and digital intelligence at every level.

At ELE Times, we will continue to track the cutting-edge of BMS and battery technology as the heartbeat of the global energy transition.

The post Redefining Battery Intelligence: The Future of BMS in an 800V, AI-Driven EV Era appeared first on ELE Times.

Introduction: Audio Systems in the Age of Efficiency

As embedded consumer electronics evolve toward greater functionality and miniaturization, audio systems are challenged to deliver high performance while consuming less board space, less power, and generating minimal EMI. Whether it’s a Bluetooth speaker on a picnic table, a surveillance system mounted on an exterior wall, or a handheld gaming device running on a lithium-ion cell, the expectations for clear, powerful audio in compact, thermally constrained systems have never been higher.

Enter the NAU82110YG, a mono, analog-input, high-efficiency Class-D audio amplifier developed to meet the rigorous design needs of modern consumer and IoT electronics. With its 18W output capability, filter-free topology, and low-noise performance, this amplifier is optimized not only for output power, but for system-level design integration, EMI mitigation, and power-aware operation.

Class-D Amplification: Efficiency by Design

At the heart of the NAU82110YG is its Class-D amplifier topology—a PWM-based design that uses high-frequency switching (pulse-width modulation) to amplify audio signals. Unlike linear Class-AB amplifiers that operate transistors in the active region (and dissipate significant power as heat), Class-D amplifiers operate power MOSFETs in either saturation or cutoff, minimizing conduction losses.

This fundamental architecture results in power efficiency improvements of up to 66% over Class-AB designs, with typical system efficiencies exceeding 90% under moderate-to-high load conditions. The reduced thermal footprint of Class-D architectures allows for:

• Smaller heat sinks or passive cooling

• Longer battery life in portable systems

• Higher output power in thermally constrained designs
  

The NAU82110YG implements this efficiency to full effect, delivering:

• Up to 18W output into 4 Ω at 12V

• Up to 10W output into 8 Ω

• <6 mA quiescent current @ 12V supply
  

This makes it an excellent candidate for always-on or battery-powered applications that cannot afford high idle currents or thermal load.

Filter-Free Output: EMI Innovation at the Edge

Conventional Class-D amplifiers require low-pass LC filters at the output stage to smooth switching artifacts and limit electromagnetic interference (EMI). However, these components increase system cost, consume PCB space, and complicate layout—particularly in tightly integrated wireless products.

The NAU82110YG breaks this dependency through a filterless Class-D output powered by two key innovations:

• Spread-Spectrum Oscillator: Dynamically modulates the PWM switching frequency, spreading EMI energy across a broader spectral band to avoid regulatory test points (e.g., FCC/CE Class B).

• Slew-Rate Control: Softens the transitions at the output stage to reduce high-frequency harmonic energy, thereby suppressing radiated and conducted EMI.
  

The result is compliant EMI performance with no external filtering components required—an enormous benefit in space- and cost-constrained designs such as smart home nodes and compact audio devices.

High SNR and PSRR: Precision Meets Power

While output power and efficiency are critical, audio signal integrity is paramount. The NAU82110YG is engineered to maintain high-fidelity signal reproduction even in noisy electrical environments. It achieves this through:

• Signal-to-Noise Ratio (SNR): 103 dB — ensuring clean output with minimal background hiss or digital noise coupling

• Power Supply Rejection Ratio (PSRR): >83 dB @ 217 Hz — isolating audio performance from ripple and transients common in switched-mode power supplies (SMPS) or wireless SoCs
  

This makes the NAU82110YG particularly well-suited for:

• Wireless audio products, where RF-induced noise and digital switching transients can corrupt audio paths

• Devices powered by buck converters or USB power, where 5V/12V supplies are inherently noisy
  

Input Flexibility and Gain Control

One of the standout features of the NAU82110YG is its dual-mode input architecture:

• Single-ended input for simpler source configurations or legacy audio chains

• Differential input for improved common-mode noise rejection—ideal in environments with significant ground bounce or shared power rails
  

In addition, the amplifier provides programmable gain control via:

• I²C control: Up to 32 discrete gain levels, allowing firmware-based dynamic range adjustment or real-time volume control

• Pin-selectable preset gains: Five options (0 / 20 / 24 / 32 / 36 dB), allowing low-latency analog selection for fixed-function systems or GPIO-driven gain staging
  

This flexibility enables the same amplifier to support diverse product families, audio input standards, and user interface styles.

Protection and Reliability: Built-In Intelligence

For designers targeting industrial, outdoor, or high-volume consumer applications, system-level protection is non-negotiable. The NAU82110YG incorporates a comprehensive suite of protections to safeguard both the amplifier and downstream components:

Protection Type	Description
Overcurrent Protection (OCP)	Prevents device damage under speaker short or overdrive conditions
Overvoltage Protection (OVP)	Shields the amplifier against input transients or power rail fluctuations
Undervoltage Lockout (UVLO)	Prevents operation below safe VDD levels
Overtemperature Protection (OTP)	Shuts down the amplifier if die temperature has exceeded thermal limits
Anti-Clipping Protection (ACP)	Reduces the likelihood of speaker damage due to waveform distortion under dynamic loads

 

Combined, these features simplify system qualification under thermal, electrical, and fault conditions, accelerating product certification (e.g., CE, UL, IEC-60065) and reducing RMA rates.

Performance Summary: NAU82110YG Key Specifications

Parameter	Value
Output Power	18W @ 4 Ω, 10W @ 8 Ω
Quiescent Current	<6 mA @ 12V
SNR	103 dB
PSRR	>83 dB @ 217 Hz
Gain Control	32-step I²C or 5 preset analog pins
Input Mode	Single-ended / Differential
Package	QFN20
Temp Range	-40°C to +105°C
EMI Control	Spread-Spectrum + Slew-Rate
Output Filter	Not required

 

Applications and Integration Scenarios

The NAU82110YG is optimized for a wide array of real-world applications:

• Bluetooth Speakers: Efficient amplification, dynamic gain, filter-free EMI compliance for compact designs

• Wireless Doorbells & Intercoms: Low idle current, fast startup (<5 ms), speaker protection for long-term use

• Outdoor Surveillance: Wide operating temperature, PSRR for SMPS isolation, differential input for long cable runs

• Handheld Game Consoles: Audio clarity with minimal power draw, quick response to sleep/resume cycles

Conclusion: A Platform-Level Audio Amplifier

The NAU82110YG represents a significant evolution in Class-D amplifier design, not just in raw performance, but in system-oriented integration. It addresses long-standing challenges—EMI compliance, board space constraints, thermal management, and dynamic audio control—through a highly integrated, filter-free, and protection-rich solution.

For engineers designing tomorrow’s connected devices, the NAU82110YG offers more than amplification: it provides an audio subsystem foundation that is efficient, flexible, and reliable by design.

For datasheets, application notes, and reference designs, visit:
https://www.nuvoton.com/products/smart-home-audio/audio-amplifiers/class-d-series/nau82110yg/

The post Engineering the Future of Compact Audio: A Deep Dive into the NAU82110YG Filter-Free Class-D Amplifier appeared first on ELE Times.

With the measurement of heart rate in wearable devices continuing to be refined for even greater precision, ams OSRAM AG of Premstaetten, Austria and Munich, Germany has introduced a new miniaturized Chip LED featuring a powerful 500µm chip that delivers enhanced signal quality. Despite measuring just 1.2mm x 1.0mm x 0.6mm, the ultra-compact LED still delivers light output of 14mW...