Feed aggregator

In booth 2144 at the IEEE Applied Power Electronics Conference (APEC 2025) Exposition at the Georgia World Congress Center in Atlanta, GA, USA (17-19 March), Japan-based Sumitomo Chemical Co Ltd is exhibiting gallium nitride (GaN) substrates and high-purity GaN-on-GaN epitaxial wafers, which are expected to be used as semiconductor materials for next-generation power devices...

In booth 1223 at IEEE Applied Power Electronics Conference & Exposition (APEC 2025) in Atlanta, GA, USA (16–20 March), ROHM Semiconductor USA LLC is presenting its latest power electronics technologies designed to improve power density and efficiency in automotive and industrial equipment applications while achieving smaller form factors and greater reliability...

Luminus Devices Inc of Sunnyvale, CA, USA — which designs and makes LEDs and solid-state technology (SST) light sources for illumination markets — has launched its patented SFT-12R and SFT-25R round LED technologies, setting what are claimed to be new benchmarks in optical performance for directional lighting applications...

🎥 Студенти КПІ ім. Ігоря Сікорського досліджують можливості інноваційних технологій у відновлюваній енергетиці kpi чт, 03/13/2025 - 11:50

NUBURU Inc of Centennial, CO, USA — which was founded in 2015 and develops and manufactures high-power industrial blue lasers — has completed the first key step in its strategic acquisition plan focused on the defense and security business sector. This aligns with its ongoing commitment to cultivate synergies with its existing laser technology expertise and the adoption of AI-driven solutions and robotic process automation capabilities by virtue of the recent partnership with NexGenAI...

A new report by Compound Semiconductor Applications (CSA) Catapult has highlighted how the UK can be a leader in power electronics for data centers and the critical role of compound semiconductors in managing data-center energy consumption...

Infineon Technologies AG of Munich, Germany has introduced its roadmap for next-level battery backup unit (BBU) solutions for uninterrupted operations of AI data centers to avoid power outages and the risk of data losses...

Lip-Bu Tan, who has exposure to both chip design and chip manufacturing worlds due to his CEO stint at EDA powerhouse Cadence, is taking the reins of Intel after Pat Gelsinger was forced out by the Intel board a few months ago. Sally Ward-Foxton takes a closer look in her EE Times piece at what led to Tan’s appointment. She argues that his former leadership roles make him a suitable person to lead Intel, currently torn between its shrinking position in CPU design and its ambitious foray into the foundry business.

Read the full story at EDN’s sister publication, EE Times.

Related Content

• Intel Foundry Embraces ARM: Start of the End?
• Intel: Gelsinger’s foundry gamble enters crunch
• Pat Gelsinger: Return of the engineer CEO that wasn’t
• Intel CEO’s Departure Leaves Top U.S. Chipmaker Adrift
• Intel Halts Products, Slows Roadmap in Years-Long Turnaround

The post Intel’s new CEO: What you need to know appeared first on EDN.

submitted by /u/Blytical [link] [comments]

Поглиблюємо наукові та дослідницькі звʼязки з провідними компаніями Туреччини kpi ср, 03/12/2025 - 20:43

submitted by /u/SIrawit [link] [comments]

Famous analog designer and author Jim Williams published an awesome design in 1986 for a 100-MHz voltage to frequency converter. He named this high-climber (picture it on the roof of the Empire State building swatting biplanes out of the air) King Kong! He followed Kong in 2005 with a significantly updated successor, “1-Hz to 100-MHz VFC features 160-dB dynamic range.”

I was fascinated by both of these impressive designs because they were way faster than any other VFC I’d ever seen! Another two decades passed before I decided to try for a 9-digit VFC of my own.  

Wow the engineering world with your unique design: Design Ideas Submission Guide

Here’s the result (Figure 1).

Figure 1 This simple VFC borrows some of Williams’ pioneering speed ideas and combines them with a few tricks of my own to reach the high altitude of a 100-MHz full scale frequency.

The Q1, D1, and Schmitt trigger U1 make a sloppy but tight and speedy VFC which is then accurized by the feedback loop comprising prescaler U3, take-back-half (TBH) charge pump D1-D4, and integrator A1. The preaccumulator U2 interfaces the 100 MHz count rate to moderate speed (~6.25 MHz) counter timer peripherals without losing resolution.

The core of Figure 1’s circuit is a very simple Q1, U1, D5 ramp-reset oscillator. Q1’s collector current discharges the few picofarads of stray capacitance provided by its own collector, Schmitt trigger U1’s input, D5, and their interconnections (as short and direct as possible, please!). U1’s sub-five-nanosecond propagation delay allows the oscillation to run from a dead stop (possible due to leakage draining R4) to beyond 100 MHz. 

During each cycle, when Q1 ramps U1 pin1 down to its trigger level, U1 responds with a ~5 ns ramp reset feedback pulse through Schottky D5. This pulls pin 1 back above the positive trigger level and starts the next oscillation cycle. Because the ramp-down rate is (more or less) proportional to Q1’s base current, which is approximately proportional to integrator A1’s output voltage, oscillation frequency is likewise. The caveat is “approximately”.

The feedback through the TBH pump, summation with the R1 input at integrator A1’s noninverting input, the output to Q1 and thence to U1 pin 1 converts “approximately” to “accurately”. One item that lets this VFC work in Kong’s frequency domain but with a considerably simpler parts count is the self-compensating TBH diode charge pump described in an earlier design idea (DI): “Take-back-half precision diode charge pump.”

So, what’s U3 doing?

The TBH pump’s self-compensation allows it to accurately dispense charge at 25 MHz or so but 100 MHz would definitely be asking too much. U3’s two-bit prescaler addresses this problem. U3 also provides an opportunity (note jumper J1) to substitute a high quality 5.000v reference for the likely lesser accuracy of the generic 5v rail. 

Figure 2 shows a 250-kHz diode charge pump boosting the 5v rail to about 8v which is then regulated down to a precision 5.000 by U4. U3 current demand, including pump drive, is about 23 mA at 100 MHz; U4 isn’t rated for quite that heavy a load, so buddy resistor R6 takes up the slack.

Figure 2 A 250-kHz diode charge pump Rail booster bringing rail to 8V which is then regulated down to a precision 5.000 V reference by U4.

The 16x preaccumulator U2 allows use of moderate performance counter-timer peripherals as slow as 6.25 MHz to acquire the full-scale 100-MHz VFC output. That idea is described in an earlier DI: “Preaccumulator handles VFC outputs that are too fast for a naked CTP to swallow.”

Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

 Related Content

• 1-Hz to 100-MHz VFC features 160-dB dynamic range
• Take-Back-Half precision diode charge pump
• Preaccumulator handles VFC outputs that are too fast for a naked CTP to swallow
• 80 MHz VFC with prescaler and preaccumulator
• 20MHz VFC with take-back-half charge pump

The post 100-MHz VFC with TBH current pump appeared first on EDN.