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Infineon Technologies AG is launching its new CoolSET System in Package (SiP), a compact, fully integrated system power controller for highly efficient power delivery of up to 60 W at universal input voltage range of 85 – 305 VAC. Housed in a small SMD package, the high-voltage MOSFET with low RDS(ON) eliminates the need for an external heat sink, reducing system size and complexity. The CoolSET SiP supports zero-voltage switching flyback operation, which enables low switching losses and low EMI signature, while also enhancing system reliability and robustness. This makes it an ideal solution for applications such as major home appliances and AI servers. In addition, the controller makes it easier for developers to meet stringent energy standards, supporting future-proof power solutions for modern designs.

The CoolSET SiP integrates a 950 V startup-cell, an 800 V avalanche rugged CoolMOS P7 SJ MOSFET, a ZVS primary flyback controller, a secondary-side synchronous rectification controller, and reinforced isolated communication enabled by Infineon’s proprietary CT Link technology. This high level of integration supports the development of more sophisticated end products by significantly reducing the number of discrete components, lowering the bill of materials, and minimizing PCB space requirements. A comprehensive set of advanced protection features simplifies system integration and allows designers more flexibility to optimize their solutions and enhance the overall user experience.

The post Infineon introduces new CoolSET System in Package (SiP) in a compact design for highly efficient power delivery up to 60 W for wide input voltage range appeared first on ELE Times.

ESG-REBOOT: освіта, інженерія та екологія kpi сб, 05/03/2025 - 22:59

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The generation of single sideband (SSB) signals first came to my attention via ham radio back in the early 1960s. My call was then and still is WA2IBH. The best phonetic I had for that call sign was “WA2 I’ve Been Had” but that’s merely a side note.

Most voice communication through ham radio back then was done by amplitude modulation or AM signals. When you heard someone on the air with an AM signal, the voice quality was usually pretty good. As I recall, the E.F. Johnson Viking Ranger transmitter was thought of as having the very best audio quality. Of course, when you had many signals on the air at the same time with different carrier frequencies, heterodyne squeals were an unpleasant fact of life which often degraded the intelligibility of the person whom you wanted to hear.

Enter into service, SSB.

To demodulate an SSB signal, a receiver needs to reinsert a carrier signal to replace the carrier signal that the sender is NOT transmitting. The resultant sound is intelligible, but the idea of audio quality is a lost cause. A human voice in a demodulated SSB transmission is difficult to linguistically describe. Perhaps it might be thought of as listening to a cross between Donald Duck and Mickey Mouse. A big improvement, though, is that there are no heterodyne squeals. All you hear from multiple signals coming through at the same time are distorted but intelligible voices. This is a MAJOR improvement. However, the acceptance of SSB in ham radio was not universally enthusiastic.

Short-wave receivers produced up through the 1950s would have automatic gain control (AGC) built in, but the response times of the AGC function were not well suited to SSB service. Modern AGC designs have “fast attack and slow decay,” meaning that the receiver gain is reduced very quickly upon arrival of an overly strong signal and that receiver gain is subsequently restored slowly. Since SSB signals have amplitudes that are “spiky,” meaning high peak amplitude to average amplitude ratios, the AGC circuits of these older receivers could be “pumped” by SSB signals, even if the receiver were not tuned exactly to the SSB signal’s exact frequency. Reception of pretty much anything else could and often was very badly affected. Modern AGC control is much better.

Many non-SSB users confronted by AGC pumping incorrectly assumed that SSB users were guilty of “splatter,” the descriptive term for the spectral spread of an overmodulated (> 100%) AM transmission. Derogatory terms such as “splatter sideband” and “silly sideband” were in common use.

Today, ham radio voice communication is dominated by SSB.

John Dunn is an electronics consultant, and a graduate of The Polytechnic Institute of Brooklyn (BSEE) and of New York University (MSEE).

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The post Single sideband generation, Part 2 appeared first on EDN.

With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge...

The STGAP4S galvanically isolated automotive gate driver from ST connects to an external MOSFET-based push-pull buffer to scale gate current capability. This architecture enables control of inverters with varying power ratings, including high-power designs with multiple parallel power switches.

The STGAP4S can deliver gate drive currents in the tens of amperes using small external MOSFETs and handles operating voltages up to 1200 V. It integrates an ADC, a flyback controller, programmable protections, and comprehensive diagnostics. The device is AEC-Q100 and ISO 26262 qualified, supporting system designs up to ASIL D.

Advanced diagnostics in the STGAP4S include self-checks for connections, gate-drive voltages, and internal circuitry such as desaturation and overcurrent detection. Faults are reported via SPI and two diagnostic pins. Protections like active Miller clamping, UVLO, OVLO, desaturation, overcurrent, and over-temperature detection ensure robust designs. Configurable thresholds, deadtime, and deglitch filters—programmable through SPI—enable flexibility while meeting ISO 26262 up to ASIL D.

Now in production, the STGAP4S is available in a SO-36W wide-body DIP, priced from $4.66 each in lots of 1000 units.

STGAP4S product page

STMicroelectronics

The post Gate driver enables flexible EV inverter design appeared first on EDN.

In booth 657 (Hall 7) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — is demonstrating how gallium nitride (GaN) technology is delivering improved performance in higher-power applications...

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Навчальний практикум-тренінг «Монтаж теплових насосів» у рамках проєкту з GIZ kpi пт, 05/02/2025 - 16:26

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives up to 600W...

Supply chain solutions firm Partstat of Winter Springs, FL, USA (which specializes in semiconductor storage and inventory ownership) has announced a strategic partnership with WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets. The collaboration aims to provide comprehensive long-term storage solutions for semiconductors, including die and wafer banking...

In the ever-dynamic and fast-moving world of semiconductors, why do some old transistors like 2N3904 keep on going for decades? Bill Schweber takes a closer look at this remarkable premise while analyzing why design engineers still prefer these tried-and-tested devices to reduce risk, cost, and sourcing hassles.

Read the full story at EDN’s sister publication, Planet Analog.

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The post Why is the 2N3904 transistor still up after 60 years? appeared first on EDN.