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Факультет інформатики та обчислювальної техніки відкриває дистанційну форму навчання: нові можливості для сучасних студентів kpi чт, 06/12/2025 - 13:19

Imec of Leuven, Belgium has unveiled a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode) device operating at low supply voltage. In parallel, the firm also demonstrated a record-low contact resistance of 0.024Ω·mm, which is essential to further boost output power in future designs. Imec says that the results mark a crucial step toward integrating GaN technology into next-gen mobile devices, particularly those targeting the 6G FR3 band between 7 and 24GHz. The results are being presented at the 2025 Symposium on VLSI Technology and Circuits in Kyoto, Japan, June 8-12...

Відкрита наука для ЗВО: КПІ ім. Ігоря Сікорського презентував інституційний інструментарій на семінарі в Любляні kpi чт, 06/12/2025 - 12:23

Anritsu expands its signal generator product line with the introduction of the EcoSyn Lite Microwave Synthesizer Module that delivers outstanding phase noise, ultra-fast switching speed and compact size. EcoSyn Lite compliments Anritsu’s high performance RubidiumTM bench top signal generators to address a wide range of signal generator applications.

EcoSyn Lite covers 10 MHz to 20 GHz frequency range and delivers +18 dBm output power. Housed in a portable, compact 4 inch x 4 inch x 0.8 inch form factor ideal for use in space constrained applications which require instrumentation grade CW signal source.

Instrument Class Phase Noise in Module Form Factor

EcoSyn Lite features best in class phase noise performance of -126 dBc/Hz (typical) at 10 GHz and 10 kHz offset, that compares favorably with some of the bench top signal generators in the market today. With its robust output power of up to +18 dBm it is ideal as LO for up/down converters in RF/Microwave transceivers. These transceivers increasingly use complex and high order modulation signals which require LOs with low phase noise for up/down conversion. EcoSyn Lite’s superior non-harmonic spurious of -60 dBc delivers very low jitter and can be used as a clock source for Gbit ADC/DAC testing and in high-speed optical systems.

Ultra-fast Frequency Switching Speed

EcoSyn Lite has ultra-fast frequency switching time of less than 50 µs in Triggered list mode. In ATE (Automatic Test Equipment) application, fast frequency switching speed saves testing time. Shorter test times translate to higher test throughput thus achieving less test cost. Ultra-fast switching time and small form factor makes EcoSyn Lite ideal in ATE rack applications.

Switching speed can also be critical in radar cross section (RCS) measurements necessary to establish radar signatures for known targets, such as aircraft, ships, and missiles. These signatures are created through measurements at thousands of frequencies. Because of the total numbers of measurements that must be made, EcoSyn’s ultra fast switching time can save considerable measurement time. Testing an antenna also requires large amounts of data at multiple frequencies. EcoSyn Lite’s ultra-fast switching speed can save a lot of testing time.

Efficient, compact and Easy to Automate

EcoSyn Lite synthesizer modules are housed in portable, compact 4 in x 4 in x 0.8 in form factor which enables them to be used in space constrained applications which require instrumentation grade CW signal source. It supports USB and SPI interfaces for remote control and is powered using a +12 VDC source.

EcoSyn Lite supports standard SCPI and QuickSyn native commands which make developing scripts to remotely control and automate very easy and user friendly.

The post Anritsu Introduces EcoSyn Lite MG36021A Microwave Synthesizer Module Outstanding Phase Noise, Ultra-fast Switching Speed and Compact Size appeared first on ELE Times.

The Central government has introduced major reforms to Special Economic Zone (SEZ) Rules to push India’s aspirations in semiconductor and electronics manufacturing, with the aim of drawing global investments and minimizing procedural bottlenecks for high-tech sectors. The Ministry of Commerce & Industry said that these measures are going to change India’s industrial policy scenario where SEZs shall henceforth be more accessible and investment-friendly.

Major Policy Changes to SEZ Norms

Amendment on Rule 5 of the SEZ Rules, 2006, is among the landmark reforms, which includes the minimum land size to be established for a semiconductor or electronic component-specific SEZ being curtailed from 50 hectares to just 10. This is expected to benefit the smaller yet highly potential players and thus fast-track building advanced manufacturing hubs.

Another important change is Rule 7, which gives more latitude in acquiring and using land. There will no longer be an encumbrance-free clause attached to mortgaging or leasing land to federal or state government agencies. This will ease a significant regulatory hurdle faced by developers and investors.

In Rule 53, a new method to compute Net Foreign Exchange (NFE) has been introduced so as to include goods being received or supplied free of cost, if such valuation is carried out as per the customs valuation norms. This will align India’s SEZ policy with global best practices and allow easier trade reporting by SEZ units.

On the other hand, Rule 18 has been amended to enable the sale of goods from SEZs into the Domestic Tariff Area (DTA) on payment of the applicable duties. This upgrade will offer enhanced flexibility to the SEZ manufacturers, as well as improve viability of commercial operations by extending market access across the country.

Focus on Capital-Intensive, Long-Gestation Sectors

These strategic reforms notified by the Department of Commerce on June 3, 2025, will be targeted toward industries with higher capital investment needs and long development time frames-such as semiconductor fabrication and advanced electronics.

By minimizing the compliance cover and raising operational flexibility, the government would like to induce global majors and homegrown innovators to invest in the evolving high-tech landscape in India.

The policy shift would also aid job creation, particularly in areas, that are highly skilled. Amongst the jobs created would be those requiring skills in chip design, fabrication engineering and electronics system manufacturing.

Early Gains: Two Major SEZ Projects Approved

In a speedy follow-up to the announcement, the Board of Approval for SEZs has cleared two proposals of major import intended to create the desired impact of the reform:

• Micron Semiconductor Technology India Pvt Ltd would construct a semiconductor LRD of SEZ at Sanand, Gujarat, 37.64 hectares in extent, with an investment commitment of ₹13,000 crore. This unit would become one of the biggest nodes in the Indian-chip making landscape.
• The Hubballi Durable Goods Cluster Pvt Ltd, promoted by Aequs Group, would set up an electronics components SEZ at Dharwad, Karnataka, spread over an area of 11.55 hectares, with an investment of about ₹100 crore.

Such approvals speak of the desire of the government to swiftly translate the policy into action and brand India as reliable partner in the global semiconductor value chain.

Strengthening India’s Global Competitiveness

Due to the soaring worldwide demand for semiconductors and electronics as digital transformation and geopolitical realignments take place, India positions itself, almost by way of strategy, as an option for manufacturing. The new SEZ framework enhances ease of doing business and gives credence to India’s claim to become a self-reliant, technology-driven economy.

These are the steps towards building a strong semiconductor ecosystem, one offering innovativeness, resilience and global relevance.

The post Centre Unveils SEZ Reforms to Boost Semiconductor and Electronics Manufacturing appeared first on ELE Times.

Pick and Place Friendly Lead Bending Option Allows Devices to Be Used as SMD Components to Reduce Assembly Costs

Vishay Intertechnology, Inc. announced that its AC03-CS series of axial cemented, leaded wirewound safety resistors is now available with a pick and place friendly lead bending option, the WSZ lead form, which allows the devices to be used as surface-mount components to reduce assembly time and lower costs.

Vishay Draloric AC03-CS series resistors act as inrush current limiting resistors during normal operation and serve as pre-charge, discharge, and snubber resistors. The devices are designed to ensure safe and silent fusing in automotive electronics, energy meters, and power supplies for industrial drives and consumer appliances when high DC voltage overload or accidental AC mains voltage of 120 VRMS / 240 VRMS is applied.

For challenging operating conditions, the devices operate over a wide temperature range from -40 °C to +200 °C and feature a robust, non-flammable silicone cement coating that conforms to UL 94 V-0. This coating allows the resistors to safeguard the PCB and other components by minimizing the risk of fire due to extreme electrical overloads, without the need for additional fuses in series.

The AEC-Q200 qualified AC03-CS series features a high surge voltage capability up to 4 kV (1.2/50 µs pulse per IEC 61000-4-5) and a power rating of 3 W at an ambient temperature of 40 °C. The devices offer resistance from 1 Ω to 100 Ω, resistance tolerance of ± 5 %, and temperature coefficient (TCR) of ± 200 ppm/K. RoHS-compliant, halogen-free, and Vishay Green, the resistors feature tin-plated terminations for compatibility with lead (Pb)-free and lead (Pb)-containing soldering processes.

The post Vishay Intertechnology AC03-CS Series Axial Cemented, Leaded Wirewound Safety Resistors Now Available With WSZ Lead Form appeared first on ELE Times.

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🎥 Міжнародний форум «Інновації у медичній інженерії» і конкурс стартапів kpi ср, 06/11/2025 - 18:06

Recently (5/21/25), I published a Design Idea (DI) describing a bidirectional current mirror using just two transistors and a diode, “A two-way mirror—current mirror that is.”

That circuit works well in some applications, like the one shown in the DI itself, but it nevertheless has limitations due to various error-introducing effects, some of which are described in this reference.

One of the more important factors of these is the “Early effect”, that kicks in to cause significant current imbalance when the voltage drop across the mirror becomes more than a couple of volts. Happily, a fix for the Early effect was devised back in 1967 by George R. Wilson, an IC design engineer at Tektronix. Wilson’s simple yet ingenious fix consisted of adding a third transistor to the basic current mirror, Q3 in Figure 1.

Figure 1 The Wilson mirror improves accuracy despite Early-effect by adding Q3.

Wow the engineering world with your unique design: Design Ideas Submission Guide

Due to Q3, the difference in voltage drop across the active mirror transistors Q1 and Q2 never differs by more than one Vbe, which reduces Early effect error to less than 1%. Figure 2 shows a variation of the basic two-sided current mirror incorporating Wilson’s accuracy-enhancing extra transistor.

Figure 2 A two-way current mirror with Wilson enhancement.

This advantage is exploited in the Figure 3 triangle-wave oscillator to achieve good T-wave symmetry despite as much as 10v being applied across the mirror.

Figure 3 D1, Q3, Q4, and Q5 comprise the two-way Wilson current mirror. It passively conducts Q2’s collector current to C1 via Q3’s base-collecter when OUT versus Vc1 is negative, but becomes an active inverting unity-gain current source when OUT goes positive and reverses the polarity. Keep variable Vin < 4v so Q2 won’t saturate on negative output peaks.

The Wilson mirror is the better choice for Figure 3, but it isn’t always the superior option. That’s because the extra transistor adds an extra Vbe to the minimum voltage drop when the mirror is active. This is no problem for Figure 3 because of its operation from 15v, but would be a deal breaker in the previous DI with its 5v-powered oscillator. Luckily, for the same reason, Early already wasn’t much of an issue there.

Courses for horses?

Stephen Woodward’s relationship with EDN’s DI column goes back quite a long way. Over 100 submissions have been accepted since his first contribution back in 1974.

 Related Content

• A two-way mirror—current mirror that is
• Use a current mirror to control a power supply
• A comparison between mirrors and Hall-effect current sensing
• Current Mirrors with a DCP offer precision and current gain control
• LED strings driven by current source/mirror
• Current mirror drives multiple LEDs from a low supply voltage

The post A two-way Wilson current mirror appeared first on EDN.

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Gallox Semiconductors, a startup with roots in Cornell University, has won the 2025 Hello Tomorrow Global Challenge in the Advanced Computing & Electronics category...

SweGaN AB of Linköping, Sweden, a developer and manufacturer of custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers, based on proprietary growth technology, has announced several key board appointments supporting its growth in telecom, satcom, defense, and power electronics....

Яка роль корпоративної етики та культури в антикорупційній сфері? kpi ср, 06/11/2025 - 12:34

BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has extended the closing date for its share purchase plan (SPP) offer (which opened on 8 May) from 10 June to 17 June...

MACOM Technology Solutions Inc of Lowell, MA, USA has announced the availability of a wideband front-end module (FEM) covering 2–18GHz. Suitable for electronic countermeasures (ECM) and phased-array radar applications, the miniature multi-chip ENGSD00088 transmit/receive module integrates a high-power 3-stage gallium nitride (GaN) power amplifier (PA), a 3-stage gallium arsenide (GaAs) low-noise amplifier (LNA) and a transmit/receive (T/R) switch with a fail-safe antenna termination, all within a compact package...

The grid has been adjusted to 2.54mm and the tracks were routed manually with 90° angles. The top layer was only used if needed but realized by wire bridges. submitted by /u/Careful_Volume_3935 [link] [comments]

New MCUs Are Ideal for Portable Devices such as Data Loggers and Charge Cases

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, introduced the RA2L2 microcontroller (MCU) group with ultra-low power consumption and the industry’s first support for the new UCB-C Revision 2.4 standard. Based on a 48-MHz Arm Cortex M23 processor, the new MCUs offer a rich feature set that makes them ideal for portable devices and PC peripherals such as gaming mice and keyboards.

The new USB Type-C Cable and Connector Specification Release 2.4 has reduced voltage detection thresholds (0.613V for 1.5A source, and 1.165V for 3.0A source). The RA2L2 MCUs are the industry’s first MCUs to support these new levels.

The RA2L2 MCUs employ proprietary low-power technology that delivers 87.5 µA/MHz active mode and software standby current of just 250nA. They also offer an independent operating clock for the low-power UART, which can be used to wake up the system when receiving data from Wi-Fi and/or Bluetooth LE modules. Along with the USB-C support, this combination of features makes the RA2L2 the premier solution available for portable devices such as USB data loggers, charge cases, barcode readers and other products.

In addition to USB-C with CC detection up to 15W (5V/3A) and USB FS support, the new MCUs offer LP UART, I3C, and CAN interfaces, giving designers the ability to reduce component count, saving cost, board-space and power consumption.

The RA2L2 MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, and networking as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. The FSP eases migration of existing IP to and from other RA devices.

“The RA2L2 Group MCUs are our first to realize full-speed USB along with USB-Type C connector support. They also ensure system costs remain low by reducing external components, and they offer the same low-power characteristics as our popular RA2L1 devices,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “These new devices demonstrate our commitment and ability to quickly deliver the solutions our customers require.”

Key Features of the RA2L2 MCUs

• Core: 48 MHz Arm Cortex-M23
• Memory: 128-64 KB Flash, 16 KB SRAM, 4 KB Dataflash
• Peripherals: USB-C, USB-FS, CAN, Low Power UART, SCI, SPI, I3C, I2S, 12-bit ADC (17-channel), Low Power Timer, Real-Time Clock, High-Speed On-chip Oscillator (HOCO), Temp Sensor
• Packages: 32-, 48- and 64-pin LQFP; 32- and 48-pin QFN
• Security: Unique ID, TRNG
• Wide Ambient Temperature Range: Ta = -40°C to 125°C
• Operating Voltage: 1.6V – 5.5V; USB Operating Voltage: 3.0V to 3.6V

Winning Combinations

Renesas has combined the new RA2L2 MCUs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including USB Data Logger, Electronic Toll with GNSS, Gaming Keyboard and Gaming Mouse. These designs are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.

The post Renesas Brings USB-C Rev. 2.4 Support to New Ultra-Low-Power RA2L2 Microcontroller Group appeared first on ELE Times.

Семінар, присвячений питанням польсько-української співпраці kpi ср, 06/11/2025 - 09:11

🎭 КПІ Cos Fest — перший фестиваль гік-культури в КПІ ім.Ігоря Сікорського kpi вт, 06/10/2025 - 23:11

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has released the EPC9196, a high-performance 25ARMS, 3-phase brushless DC (BLDC) motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96V–150V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics...