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Texas Instruments’ APEC-related releases are power management chips centered around supporting the AI-driven power demands in data centers. The releases include the first 48-V integrated hot-swap eFuse with power-path protection (TPS1685) and an integrated GaN power stage (gate driver + FET) in the industry-standard TOLL package. 

In a conversation with Priya Thanigai, VP and Business Unit Manager of power switches at Texas Instruments, EDN obtained some insights on meeting the needs of next-generation racks demanding the 48-V architecture.

Spotlight on data centers

Hot topics at APEC typically encompassed the use of wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) to yield higher efficiency subsystems in the steady electrification of technologies. Electrified end applications have spanned from e-mobility to industrial processes that are enabled by battery and smart grid advancements. 

Discussions this year have shifted more toward the power demands that generative AI has created for data centers. While much of the actual power consumption of these data centers remains secretive, it’s apparent that LLMs like ChatGPT and DeepSeek have created a substantial increase; the U.S. data center electricity usage tripled from 2014 to 2023 according to the U.S. department of energy (DoE). The number is anticipated to double or triple by 2028.

The international energy agency (IEA) also reported that data centers consumed ~1.4-1.7% of global electricity in 2022; this is also expected to double by 2026. According to the World Economic Forum, “the computational power needed for sustaining AI’s growth is doubling roughly every 100 days.”

Going nuclear

Hyperscalers are also making more apparent their plans to sustain the energy demands. In September 2024, plans to recommission the Three Mile Island nuclear plant were made public with a 20-year contract to help power Microsoft data centers. Other technology companies follow a similar nuclear path, augmenting power capabilities with small modular reactors (SMRs).

And as the semiconductor industry is feverishly fabricating chips that can efficiently run these compute-intensive training tasks through software-hardware codesign, the power demands continually soar. Further into the future, these nuclear reactors could be used with solid-state transformers to support data center processing.

The 48-V bus and beyond

The data center server room consists of a sea of IT racks supported by a sidecar that holds hot-swappable power supply units (PSUs) that facilitate replacing or upgrading a PSU without shutting down the server (Figure 1). These PSUs support much higher power densities moving from 6 kW with the 48-V bus to 100 MW with the 400-V bus.

Figure 1: Sidecar, IT rack, and supporting subsystems shown at the TI booth during APEC 2025. 

“While data centers have been ahead of the curve, cars are only now moving to 48 V,” said Thanigai. “But data centers have probably already been there for about a decade.” It’s just been very slow because earlier systems really didn’t need the compute power until LLMs exploded. Until then, it was only the high-end GPUs that needed that extra power at 48 V.

She mentioned how TI had been keeping a watchful eye on the relatively slow move from 12-V products for data centers 48-V and how recent pressures have brought on that inflection point. “Now we’re seeing more native 48-V systems ship and we’re talking about 400-V already,” Thanigai said. “So the transition from 12 V to 48 V may have taken a decade to hit the inflection point but 48 V to 400 V will probably be shorter and sharper because of how much energy is needed by data centers.”

Moving from discretes to integrated eFuses

Power path protection is tied directly to PSU reliability and is therefore a critical aspect of ensuring zero downtime deployments. The 48-V eFuse is a successor to the popular 12-V eFuse category; the shift to 48 V allows users to scale power to beyond 6 kW. 

“If you’re looking at the power design transition, generally power architectures will begin with discretes at the start of any design because they want to get a good feel of how to build something,” explained Thanigai. The building blocks of power path protection generally include the power FET, a gate or voltage drive to drive it, and components like a soft-start capacitor to control the inrush, comparators, and current-sense elements.

Thanigai described the moves toward more integration where the hot swap controller integrates the amplifiers, some of the protection features, and some of the smarts. However, there still remains an external FET and sensing element. 

“The last leg of the integration is eFuse where the FET, the controller, and all the smarts are in a single chip,” she said. “That’s a classic power design evolution, where you go from discrete to semi-integrated to fully integrated.” The TPS1685 eFuse includes protection features like rapid response to fault events with an integrated black box for fault logging. Then there is a user-configurable overcurrent blanking timer that avoids false tripping at peak inrush.

Advanced stacking for loads > 6 kW

Mismatches in the on-state resistance (Rdson) due to PCB trace resistance and comparator thresholds can create false tripping (Figure 2). The conventional discrete designs require power architects to hand calculate the margins to make sure the FETs are matched such that no single FET is taking on more thermal stress than the others.  

Figure 2: Discrete implementations require individual calculations per sense element and FET to take into account mismatches at each node; instead Rdson is actively adjusted via Vgs regulation and equal steady-state current across all devices is achieved through path resistance equalization. Source: Texas Instruments 

The IP in the TPS1685 eFuse actively measures and monitors the thermal stress at various areas of the FET within each of the eFuses and balances current between each automatically through a single-wire protocol. The integration designates one eFuse as the primary controller to monitor total system current by using the interconnected IMON pins, enabling active RDS(ON) shifting to ensure devices are current-sharing.

“You can basically stack unlimited eFuses,” said Thanigai, “We’ve shown up to 12 operational eFuses on a customer board and each of them can do 1 kW (~ 50 V @ 20 A), so we easily reach the 5-10 kW that you see with systems nowadays. But we can scale higher than that since there’s no upper limit.”

Figure 3: Image of 6 eFuses stacked in parallel on the top and bottom of a PCB to support a maximum load current of 120 A. 

Moving toward 400 V

When asked about the move toward supporting 400-V bus architectures, Thanigai responded, “There’s two aspects in these eFuses.” There’s the pure analog power domain, which is the FET architectures, and then there’s the digital domain which embodies smarts around the FET, she added.

All of the digital IP TI has developed scales from 12 V to 48 V to 400 V, and that while this particular device includes 48-V power FETs, TI is preparing to scale this up to 400 V.

Aalyia Shaukat, associate editor at EDN, has worked in the design publishing industry for six years. She holds a Bachelor’s degree in electrical engineering from Rochester Institute of Technology, and has published works in major EE journals as well as trade publications.

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The post Data center power meets rising energy demands amid AI boom appeared first on EDN.

Lumentum Holdings Inc of San Jose, CA, USA (which designs and makes optical and photonic products for optical networks and lasers for industrial and consumer markets) has been selected as a key contributor in NVIDIA’s silicon photonics ecosystem. Lumentum’s high-power, high-efficiency lasers have a crucial role in the development and deployment of new NVIDIA Spectrum-X Photonics networking switches...

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that its portfolio of 3.2kW, 4.5kW and 8.5kW AI data-center power supply unit (PSU) designs exceed the new 80 PLUS ‘Ruby’ certification, focused on the highest level of efficiency for redundant server data-center PSUs...

Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has added to its expanding e-mode GaN FET portfolio with 12 new devices intended to address the growing demand for higher efficiency and more compact systems...

Поїздка в Японію: тиждень у країні надсучасних технологій та стародавніх традицій Інформація КП вт, 03/18/2025 - 19:25

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🍀 Інженерний тиждень «KPISchool» kpi вт, 03/18/2025 - 17:45

The venerable Stephen Woodward recently published the design idea (DI) “Flip ON flop OFF” that converts a momentary push button to a classic push-on, push-off switch. Figure 1 is an attempt to go further still in terms of economy.

The circuit shown in Figure 1 utilizes only one half of a dual D-type package and one more capacitor to the original parts count. It also incorporates an RC power on set (or reset), to guarantee the initial state of the switch when power is applied.

Figure 1 U1A debounces SW1 via R1 & C2 so U1A can reliably toggle.

Wow the engineering world with your unique design: Design Ideas Submission Guide

The initial state of the switch is determined by the Set pin of U1A following the rising voltage on the power input due to the initial discharged state of C1. Capacitor C1 then charges towards ground leaving the flip-flop with the Q output high and the PMOS off.

Alternatively, this RC power on Set circuit can be wired to the Reset pin to change the initial power on state of the switch. The device ESD clamping diodes provide the capacitor discharge path when power is turned off.

The D-type flip-flop is essentially connected in the familiar way of Q-bar to D-input to form a bistable with each clock rising edge toggling the output state. However, in this case the combination of R1 and C2 form a delay network which prevents rapid changes on the D-input, thus effectively de-bouncing the switch by inhibiting state changes until C2 has charged/discharged to the state on the Q-bar output.

—Chris Nother built a discrete Tx/Rx for model aircraft at an early age, later discovering the dreaded “Mains Hum” in a home built “Dinsdale” Hi-Fi amplifier. Employed in R&D using the then newly available available CMOS logic from Motorola and Nat-Semi, career changes to Mainframe Computers, design of disk drive automated test equipment and storage solutions, finally turning full circle in retirement to the hobby that started it all.

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The post Latching D-type CMOS power switch: A “Flip ON Flop OFF” alternative appeared first on EDN.

Steel soldering is a metal-joining process used to bond steel components by melting a filler metal with a lower melting point than the steel itself. Unlike welding, which fuses the base metals together, or brazing, which uses higher temperatures, soldering operates at relatively low temperatures (typically below 450°C or 840°F). This makes it suitable for delicate applications where excessive heat could damage the materials.

Soldering steel is more challenging than soldering other metals like copper or brass due to steel’s oxidation properties and lower thermal conductivity. To ensure a strong joint, fluxes and specialized soldering materials, such as tin-lead or silver-based alloys, are commonly used.

How Steel Soldering Works

Steel soldering follows a systematic approach that involves surface preparation, application of heat, and bonding with the help of solder and flux. The key principle behind the process is capillary action, where the molten solder flows into the microscopic gaps between metal surfaces, creating a strong mechanical and electrical bond.

The success of steel soldering depends on various factors, including the type of flux, the choice of solder alloy, and the precision of temperature control. Proper surface cleaning and oxide removal are crucial to achieving a reliable bond, as steel tends to develop an oxide layer that inhibits solder adhesion.

Steel Soldering Process

The steel soldering process consists of several essential steps. First, surface preparation is crucial. The steel surfaces must be cleaned thoroughly using sandpaper, steel wool, or chemical cleaners to remove dirt, grease, and oxidation. Once cleaned, an appropriate flux, such as zinc chloride or rosin-based flux, is applied to prevent oxidation and promote solder flow.

Next, selecting the right solder and flux is important. Lead-free solder alloys such as silver-based or tin-copper alloys are recommended for environmental safety. The flux should be compatible with the solder alloy to ensure proper wetting and adhesion.

The heating process follows, where a soldering iron, torch, or induction heating is used to bring the steel to the required temperature. Uniform heating is necessary to avoid weak joints and improper solder flow. Once the joint reaches the solder’s melting point, the solder wire or paste is introduced. The molten solder then flows into the joint through capillary action.

After soldering, the joint should be allowed to cool naturally without disturbance to prevent cracking. Once cooled, residual flux and oxidation are removed using warm water or specialized cleaning agents to ensure long-term durability.

Steel Soldering Uses & Applications

Steel soldering finds applications in a wide range of industries due to its ability to create strong, reliable joints at low temperatures. In the electronics and electrical industry, it is used in circuit boards, connectors, and electrical components where steel parts need reliable connections. It is also utilized for shielding applications for electromagnetic interference (EMI) protection.

In the automotive and aerospace industries, steel soldering is employed in small, heat-sensitive components, such as sensors and electrical connectors. Aerospace applications require precise soldering of critical parts to maintain structural integrity.

The HVAC systems and plumbing industries also benefit from steel soldering, particularly in joining refrigeration coils, pipe fittings, and heat exchangers. This method provides leak-proof and corrosion-resistant joints essential for efficient system performance.

Additionally, steel soldering is widely used in jewellery making and artistic metalwork. It allows artisans to create custom metal pieces, repair jewellery, and design decorative steel structures while maintaining an aesthetically pleasing finish. The medical industry also utilizes steel soldering in the manufacturing of surgical instruments and medical devices, ensuring precise and biocompatible metal bonding.

Steel Soldering Advantages

Steel soldering offers several advantages over other metal joining methods, making it an ideal choice for specific applications. One major advantage is its low heat requirement. Unlike welding, which involves high temperatures that can cause warping or damage, soldering operates at much lower temperatures, preserving the integrity of delicate components.

Another significant benefit is its versatility. Steel soldering can be used on thin or intricate steel components without compromising their structural integrity. The process creates strong and reliable bonds that are resistant to corrosion, ensuring long-term durability.

Cost-effectiveness is another advantage, as soldering requires minimal equipment and energy compared to welding and brazing. This makes it an economical choice for small-scale manufacturing and repairs. Moreover, soldering is relatively easy to learn and perform, requiring minimal training and no specialized machinery, making it accessible to both professionals and hobbyists.

A notable safety advantage is that soldering does not require specialized protective equipment. Unlike welding, which necessitates protective gear against UV radiation and fumes, soldering is a safer process with fewer health hazards.

Steel Soldering Disadvantages

Despite its benefits, steel soldering has certain limitations. One major drawback is that soldered joints are not as strong as welded joints, making them unsuitable for high-load applications. Additionally, soldered joints have limited heat resistance and may fail under high temperatures, restricting their use in environments where elevated temperatures are a concern.

Another challenge is oxidation. Steel tends to form an oxide layer quickly, which can hinder solder adhesion. This requires the use of aggressive fluxes or pre-cleaning treatments to ensure a strong bond. Environmental concerns also arise with traditional lead-based solder, as it poses health and environmental risks, leading to a shift toward lead-free alternatives.

Lastly, some fluxes used in the soldering process leave corrosive residues that must be thoroughly cleaned to prevent long-term damage to the joint. Proper cleaning procedures are necessary to maintain joint integrity and prevent issues such as corrosion or weak bonding over time.

Conclusion

Steel soldering is a valuable technique for low-temperature metal bonding, offering numerous advantages in electronics, automotive, HVAC, and medical applications. While it has certain limitations, proper material selection, surface preparation, and soldering techniques can help achieve strong and reliable bonds. As advancements in soldering technology continue, steel soldering is becoming even more efficient and environmentally friendly, making it a crucial method in modern manufacturing and repair industries.

The post Steel Soldering: Definition, Process, Working, Uses & Advantages appeared first on ELE Times.

On 25 March, Tokyo-based Mitsubishi Electric Corp will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO (mMIMO) base stations. Operating in the 3.6–4.0GHz band, it can be widely deployed in North America and East and Southeast Asia. As 5G networks expand from urban centers to regional areas, mMIMO base stations, especially 32T32R mMIMO base stations (consisting of 32 transmitters and receivers), are expected to be increasingly deployed. Mitsubishi Electric says that its 16W GaN PAM is particularly suited to 32T32R mMIMO base stations because it reduces both production costs and power consumption...

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC2367, a next-generation 100V eGaN FET that delivers high performance and efficiency as well as lower system costs for power conversion applications...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has introduced the first generation of its 1200V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET)-based SPM 31 intelligent power modules (IPMs). EliteSiC SPM 31 IPMs deliver the highest energy efficiency and power density in the smallest form factor compared with using Field Stop 7 IGBT technology, it is claimed, resulting in lower total system cost than any other leading solution on the market...

💼 Оголошується конкурс на заміщення посад наукових працівників kpi вт, 03/18/2025 - 11:00

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