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Вартість навчання здобувачів вищої освіти - громадян України (контракт) kpi чт, 05/15/2025 - 23:59

Components 1.100uf ,100v capacitor 2.bc547 transistor 3.4.7k resistor 4.inductor :value unknown cus I grab it off a computer power supply 5.1n4007 diode It also makes this high frequency ringing when it's on like some scifi thing . submitted by /u/electron_561 [link] [comments]

День вишиванки 2025 у КПІ ім. Ігоря Сікорського kpi чт, 05/15/2025 - 21:53

Команда КПІ перемогла у масштабних змаганнях з  кібербезпеки  Hackfinity Battle CTF 2025 kpi чт, 05/15/2025 - 21:39

На війні загинув випускник нашого університету Максим Неліпа kpi чт, 05/15/2025 - 21:16

A new European project supported by the Photonics Partnership that aims to power the digital backbone of modern industry is laying the foundations for ultra-connected smart factories...

Recently placed an order with JLCPCB, and they sent an X-Ray of the board. It's for an LGA CAN transceiver with isolated power-CA-IS2062A. The transformer windings can also be seen. submitted by /u/jonathan__34 [link] [comments]

Sycamore-W, an ultra-thin near-field MEMS speaker from xMEMS, brings premium audio to smartwatches and fitness bands. With dimensions of just 20×4×1.28 mm, it reduces speaker package volume by up to 70%, freeing space within wrist-worn devices for additional biometric sensors or larger batteries. At just 150 mg, Sycamore-W also minimizes weight impact in space-constrained wearables.

Compared to conventional coil speakers—typically 3 mm to 4 mm thick and weighing up to 3 grams—Sycamore-W’s slim profile and low mass significantly reduce bulk. The lighter design minimizes strain and improves comfort for all-day wear.

With solid-state durability, the MEMS speaker offers component-level IP58-rated ingress protection and withstands mechanical shocks up to 10,000 g. It delivers zero phase delay and improved low-frequency response compared to dynamic drivers, exhibiting 1st-order decay—where output falls off more gradually (1/f vs 1/f², or –20 dB vs –40 dB from 2 kHz to 20 Hz)—for stronger bass performance.

Samples of the Sycamore-W are available now to early access customers, with volume production slated for Q2 2026.

Sycamore-W product page

xMEMS Labs 

The post Micro-speaker enables slimmer wearables appeared first on EDN.

The LSM6DSV320X inertial measurement unit (IMU) from ST features dual accelerometers for activity tracking up to 16 g and impact detection up to 320 g. To support edge computing, it integrates a machine-learning core for context awareness with exportable AI features, along with embedded functions such as a finite state machine for configurable motion tracking.

Housed in a compact 3×2.5-mm module, the IMU suits applications ranging from wearables and consumer medical devices to smart home and vehicle crash-detection systems. In addition to the 3-axis accelerometers, it includes a gyroscope with a range of up to ±4000 dps. All three sensors are fully synchronized to simplify application development.

Other features include an embedded sensor fusion low-power algorithm for spatial orientation and an adaptive self-configuration (ASC) function. With ASC, the sensors automatically adjust their settings in real time when a specific motion pattern or machine-learning core signal is detected—without requiring host processor intervention.

In production now, the LSM6DSV320X is supported in the Edge AI Suite and will be added to AIoT Craft by the end of 2025.

LSM6DSV320X product page

STMicroelectronics

The post IMU tracks high-G impacts and motion appeared first on EDN.

Qorvo has expanded its QPG6200 portfolio of low-power wireless SoCs supporting Matter over Thread, Zigbee, and Bluetooth LE. Featuring the company’s ConcurrentConnect technology, the devices enable seamless multiprotocol communication for smart home, industrial automation, and other IoT applications.

Based on the previously announced QPG6200L—now in production with leading smart home OEMs—the QPL6200J, QPL6200M, and QPL6200N deliver up to 20 dBm transmit power in a compact QFN package. Output power is software-configurable to meet global regulatory requirements. All devices are powered by an Arm Cortex-M4F processor running at up to 192 MHz, with 2 MB of nonvolatile memory and 336 kB of RAM.

The table below highlights key differences.

A PSA Certified Level 2 development kit based on the QPG6200L is available now, with the full device family scheduled for production in the third quarter of 2025.

QPG6200J product page

QPG6200L product page

QPG6200M product page

QPG6200N product page

Qorvo

The post SoCs boost smart home interoperability appeared first on EDN.

Anritsu’s Site Master cable and antenna analyzers are now available with optional vector network analyzer (VNA) and vector voltmeter (VVM) capabilities. These additions extend their use to field testing of filters and amplifiers, as well as maintenance of radar and antenna systems, including VHF omnidirectional range (VOR) and instrument landing system (ILS) navigation equipment.

The two-port, one-path VNA covers 5 kHz to 4 GHz or 6 GHz. Calibration options include standard open/short/load accessories, the one-step InstaCal module, or factory ReadyCal for immediate measurements. With over 100 dB of dynamic range and –45 dBm to +9 dBm output power, it supports testing of filters, diplexers, and amplifiers in communication base stations. A 380-µs/point sweep speed accelerates alignment and tuning.

The VVM performs cable phase matching in complex phased array antenna systems, such as VOR/ILS systems at major airports. A table display of individual results simplifies phase matching of multiple cables.

The VNA and VVM options for the Site Master MS2085A and MS2089A portable analyzers are now available, with existing instruments eligible for upgrade.

Site Master product page

Anritsu

The post Field analyzers gain vector functions appeared first on EDN.

Infineon’s CoolGaN 650-V G5 bidirectional switch (BDS) integrates two switches in a single device to actively block current and voltage in both directions. Its monolithic common-drain design with a double-gate structure, based on gate injection transistor technology, improves efficiency, reduces die size, and replaces conventional back-to-back configurations.

The GaN switch simplifies cycloconverter designs by enabling single-stage power conversion, eliminating the need for multiple conversion stages. In microinverters, it supports higher power density and a lower component count. It also enables advanced grid functions such as reactive power compensation and two-way power flow.

The CoolGaN 650-V G5 BDS is offered in a TOLT package with RDS(on) values of 110 mΩ and 55 mΩ. It is now open for ordering, with samples of the 110-mΩ version available.

Infineon Technologies 

The post GaN switch streamlines power conversion appeared first on EDN.

High-reliability power semiconductor solutions provider CISSOID of Mont-Saint-Guibert, Belgium and EDAG Group of Wiesbaden, Germany (an independent engineering services provider for the mobility industry) have announced a strategic partnership to accelerate the development of next-generation silicon carbide (SiC) traction inverters for electric mobility applications...

What function does a capacitor auto-discharger perform in a power supply circuit, and how does it work? What are its fundamental building blocks, and can engineers develop a capacitor auto-discharge module on their own? What are basic considerations for component selection? T. K. Hareendran provides answers to these questions in his profile story for this design circuit.

Read the full article at EDN’s sister publication, Planet Analog.

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The post A closer look at capacitor auto-discharge circuit appeared first on EDN.

My first encounter several decades ago with a pillar of modern technology yielded more than just one lesson.

NEREM 1967 was the IEEE Northeast Electronics and Engineering Meeting held at the Sheraton-Boston Hotel and the War Memorial Auditorium in Boston, MA, from November 1 to 3, 1967. I was there, although most of the engineering population in the Northeastern United States could probably have shared that claim back then; it was perhaps the busiest mass of human activity I’ve ever encountered in one common environment.

The display booths were extremely elaborate, but the one thing I couldn’t help noticing was that all these demonstrations of test equipment sported a constellation of these strange but intense little red lights that, in many cases, formed numbers, but some of which had to be viewed from pretty much straight on or the light would vanish.

Of course, they were early versions of LEDs.

Shortly afterward, having learned what an LED was, I obtained a sample. It was a Monsanto type MV-50 (Figure 1), which, when I wired it up, I saw its little red light. At the same time, a separate light of realization went off in my head as I finally understood what it was that I’d been seeing all over the place at the NEREM show.

Figure 1 My very first LED obtained soon after attending NEREM 1967. Source: eBay

Next, I began studying some LED datasheets.

One parameter that kept appearing at the forefront of many datasheets was light output rated in candelas. The candela is a unit of luminous intensity or luminous power per unit of solid angle, and the numbers for that parameter rivaled each other from product to product.

However!!

The physical dimensions of some LEDs of that era were really quite small and some of them had very directional and limited light output patterns. Even though the candela ratings could be “impressive”, the total light output from some of them was, if you’ll forgive me for being judgmental, puny.

The stress that was placed on the high intensity rating seemed like an exercise in specmanship. Still, if you want to know how far LED technology has come in the ensuing fifty-odd years, take a late-night walk-through Times Square in Manhattan and don’t forget your sunglasses.

John Dunn is an electronics consultant, and a graduate of The Polytechnic Institute of Brooklyn (BSEE) and of New York University (MSEE).

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The post My very first LED appeared first on EDN.

In January, InnoScience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride (GaN) power chips on 8” silicon wafers — and its subsidiary Innoscience (Suzhou) Semiconductor Co Ltd filed complaints (2024) Su 05 Minchu No. 1430 and (2024) Su 05 Minchu No. 1431 (regarding patent numbers 202311774650.7s and 202211387983.X) to the Intermediate People’s Court of Suzhou City in Jiangsu Province against Infineon Technologies (China) Co Ltd, its subsidiary Infineon Technologies (Wuxi) Co Ltd, and Suzhou Chipswork Electronics Technologies Co Ltd...

UK-based Space Forge Ltd, which is pioneering space-based advanced materials manufacturing and return technology, has completed its £22.6m (about $30m) Series A funding round (the largest Series A in UK space tech history)...

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has appointed Cristiano Amoruso to its board of directors...

Vacuum solution provider Busch Group of Maulburg, Baden-Württemberg, Germany says that its brand centrotherm clean solutions of Blaubeuren, Baden-Württemberg will become part of Busch Group company Pfeiffer Vacuum+Fab Solutions of Aßlar, Germany. Effective September, the gas abatement systems previously offered under the centrotherm brand will be integrated into the Pfeiffer portfolio and be available under this name in the future, uniting the two members of the global Busch Group...

Semiconductors are the crucial parts of electric vehicles (EVs) because they allow for advanced interactive features, efficiency battery management, powertrain enhancements and safety measures. The EV revolution is not only coming; it is currently happening. Semiconductors, a sometimes disregarded yet crucial building element, are the key element of this revolution. These microscopic semiconducting chips are the brain and nervous system of EVs, driving everything from power conversion and battery management to safety systems and intelligent infotainment systems. As EV adoption increases worldwide, demand for high-performance semiconductors is also on the rise making the EV semiconductor market one the most vibrant parts of the tech-led economy.

Market Overview:

Over the last few years, the EV semiconductor industry has seen enormous growth. Based on industry reports, global market size stood at approximately $11.19 billion as of 2023 and is expected to boom to nearly $57.1 billion by 2029 with a CAGR of more than 31%. The boom is being fueled by a combination of factors: tighter environmental controls, government subsidies, growing EV infrastructure and advances in automotive electronics technology.

EVs need significantly more semiconductor devices compared to conventional internal combustion engine (ICE) cars. From motor control units and battery management units (BMUs) to infotainment systems and advanced driver-assistance systems (ADAS), semiconductors make these features functional.

Key Technologies Driving Growth

Among the most prominent trends driving the market is the trend towards wide-bandgap semiconductors, specifically Silicon Carbide (SiC) and Gallium Nitride (GaN) materials. These materials are superior to conventional silicon for high-temperature and high-voltage applications and hence, they are suited for EV powertrains as well as rapid-charging infrastructure.

SiC chips, for instance, have the potential to make inverters more efficient, thus extending driving ranges and cutting energy loss. Players such as STMicroelectronics, Infineon, Wolfspeed and ON Semiconductor are investing heavily in SiC lines to address this increasing demand.

Since they allow producers to integrate several functions into a single chip and reduce the size and weight of their parts, system on chip (SoC) solutions are gaining popularity as well. This enhances overall car performance and design versatility.

Uses:

• In EVs, semiconductors are crucial to the vehicle’s battery management system (BMS). They assist in keeping an eye on the battery pack’s temperature, health and charge level. Onboarding charging systems also use semiconductors to help convert and control voltage, which improves charging speed and efficiency.
• Advanced driver assistance systems (ADAS) based primarily on semiconductor processors are adaptive cruise control, lane-keeping assist, and collision avoidance systems. These circuits make decisions in real time using data from multiple sensors, cameras, and radar.
• Infotainment systems are driven by semiconductor chips, incorporating features such as touchscreen display, GPS navigation, car audio, and connectivity features of the smartphone.
• As the largest, with more than half of the market, is the powertrain segment. Power semiconductors control battery power so that the electric motor can operate efficiently.

Regional Perspectives: Asia-Pacific Leads

Geographically, South Korea, Japan and China dominate the Asia-Pacific EV semiconductor market.

With schemes such as “Make in India” and the FAME II scheme (Faster Adoption and Manufacturing of Hybrid and Electric Vehicles) encouraging domestic EV and semiconductor manufacturing, India is also becoming a key player.

In addition to that, Europe is also deeply investing in environmental-friendly transport as well as in semiconductor technology. With the CHIPS and Science Act, America is also strengthening its domestic production of semiconductors to try to meet its demand less on foreign chipmakers and foster a stronger EV ecosystem.

Challenges and Supply Chain Constraints

Though there is a strong growth prognosis, the market does not lack its challenges. The most critical of these is the semiconductor supply chain crisis that commenced with the onset of the COVID-19 pandemic and has since impacted industries across the globe. The highly concentrated nature of chip production—dominated by just a handful of foundries such as TSMC (Taiwan) and Samsung (South Korea)—creates vulnerabilities.

Furthermore, geopolitical tensions, most notably between the U.S. and China, are recasting global trade patterns. China’s dominance of the supply chain of rare earth minerals like gallium and germanium, critical to semiconductor manufacturing, constitutes a strategic risk for the West and has fueled demands for diversification of sources.

Market volatility is also a problem. For example, firms such as Mersen and STMicroelectronics have recently pushed back their semiconductor revenue targets owing to volatile EV demand and postponed ramp-up of new plants. Analysts now estimate that key financial milestones will be achieved by 2029–2030, rather than previous estimates of 2026–2027.

Conclusion:

The EV Semiconductor industry sits at the confluence of mobility digitalization and transport electrification, with the demand growing at an unprecedented level. Recent data indicates that the sales of EVs worldwide will surpass 20 million units by 2025, representing one in four automobiles sold globally. The growth is fueled by heightened affordability, decreased operating expenses and government support.

Further, the market for compound semiconductor materials, comprising Silicon carbide (SiC) and Gallium Nitride (GaN) is estimated to increase from $29.97 billion in 2025 to $91.03 billion in 2025, driven by the growth of 5G and EV adoption. The overall semiconductor market is estimated to be $ 697 billion in 2025, representing an 11% year-over year growth rate.

Despite supply chain risks and market instability, improvements in production, materials and system integration will continue to advance the field. Technology specialists, investors, and manufacturers view this industry as having a high rate of return and playing a key role in shaping the direction of mobility in the future.

The post Why the Future of Mobility Depends on Smarter, Smaller Semiconductors appeared first on ELE Times.