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Embedded Multi-die Interconnect Bridge-T (EMIB-T) was a prominent highlight of the Intel Foundry Direct Connect event. Intel is promoting this advanced packaging technology as a key building block for high-speed chiplet designs and has partnered with major EDA and IP houses to accelerate implementations around EMIB-T technology.

As the nomenclature shows, EMIB-T is built around the Embedded Multi-die Interconnect Bridge (EMIB) technology, a high-bandwidth, low-latency, and low-power interconnect for multi-die silicon. EMIB-T stands for EMIB-TSV and it supports high-bandwidth interfaces like HBM4 and Universal Chiplet Interconnect Express (UCIe). In other words, it’s an EMIB implementation that uses the through-silicon via (TSV) technique to send the signal through the bridge with TSVs instead of wrapping the signal around the bridge.

Figure 1 EMIB-T, which adds TSVs to the bridge, can ease the enablement of IP integration from other packaging designs. Source: Intel

Another way to see EMIB-T is the combination of EMIB 2.5D and Foveros 3D packaging technologies for high interconnect densities at die sizes beyond the reticle limit. Foveros is a 3D chip stacking technology that significantly reduces the size of bump pitches, increasing interconnect density.

All three major EDA powerhouses have joined the Intel Foundry Chiplet Alliance Program, which is intrinsically linked to EMIB-T technology. So, all three are working closely with Intel Foundry to develop advanced packaging workflows for EMIB-T. Start with Cadence’s solution, which helps streamline the integration of complex multi-chiplet architectures.

Next, Siemens EDA has announced the certification of a TSV-based reference workflow for EMIB-T. It supports detailed implementations and thermal analysis of the die, EMIB-T and package substrate, signal and power integrity analysis, and package assembly design kit (PADK)-driven verification.

Synopsys is also collaborating with Intel Foundry to develop an EDA workflow for EMIB-T advanced packaging technology using its 3DIC Compiler. In addition to the EDA trio, Intel Foundry has engaged other players for EMIB-T support. For instance, Keysight EDA is working closely with Intel Foundry to bolster the chiplet interoperability ecosystem.

Figure 2 The EMIB-T advanced packaging technology promises power, performance, and area (PPA) advantages for multi-die chiplet designs. Source: Intel

The EMIB-T silicon bridge technology is a major step toward harnessing advanced packaging for the rapidly emerging chiplets world. Intel Foundry Direct Connect highlighted how the Santa Clara, California-based chipmaker sees this advanced packaging technology in its future roadmaps. More technical details about EMIB-T are likely to emerge later in 2025.

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With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK CoolGaN Transistor 650 V module, adding to its growing GaN power portfolio. Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time to market.

“The CoolGaN based EasyPACK power modules combine Infineon’s expertise in power semiconductors and power modules,” says Roland Ott, Senior Vice President and Head of the Green Energy Modules and Systems Business Unit at Infineon. “This combination offers customers a solution that meets the increasing demand for high-performance and energy-efficient technologies in applications such as data centers, renewable energy, and EV charging.”

The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through compact die packing enabling fast and efficient switching. Delivering up to 70 kW per phase with just a single module, the design supports compact and scalable high-power systems. Furthermore, by combining Infineon’s .XT interconnect technology with CoolGaN options, the module enhances both performance and reliability. The .XT technology is implemented on a high-performance substrate, significantly reducing thermal resistance, which in turn translates to higher system efficiency and lower cooling demands. This results in increased power density and excellent cycling robustness, even under demanding operating conditions. With support for a broad range of topologies and customization options, the EasyPACK CoolGaN module addresses diverse requirements in industrial and energy applications.

The post Infineon expands its GaN power portfolio with EasyPACK CoolGaN power modules for high-voltage applications appeared first on ELE Times.