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Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized products. Gen 4 offerings include power modules, discrete components, and bare die available in 750-V, 1200-V, and 2300-V classes.

According to Wolfspeed, it is the only producer with both silicon carbide material and silicon carbide device fabrication facilities based in the U.S. This factor is becoming increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production.

The Gen 4 platform was designed to improve system efficiency and prolong application life, even in the harshest environments. It is expected to deliver performance enhancements in high-power automotive, industrial, and renewable energy systems, with key benefits including: 

• Holistic system efficiency: Delivering up to a 21% reduction in on-resistance at operating temperatures with up to 15% lower switching losses.
• Durability: Ensuring reliable performance, including a short-circuit withstand time of up to 2.3 µs to provide additional safety margin.
• Lower system cost: Streamlining design processes to reduce system costs and development time.

Gen 4 SiC power modules, discrete components, and bare die are available now through Wolfspeed’s distributor network.

Wolfspeed

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