Feed aggregator

Mining exploration company Nimy Resources Ltd of Perth, Western Australia and Perth-based Curtin University are to undertake what is described as a pioneering research program into processing gallium...

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has announced the first commercial acceptance and qualification of its LUMINA+ metal-organic chemical vapor deposition (MOCVD) system by Ennostar Corp of Hsinchu, Taiwan (a provider of integrated optoelectronic solutions, specializing in R&D and manufacturing III-V materials). The order is said to set a new benchmark for high-volume arsenide and phosphide (As/P) production...

submitted by /u/1Davide [link] [comments]

Георгій Васильєв: діяльність на перетині науки, освіти та державної політики Інформація КП чт, 06/11/2026 - 16:23

Advance robotics and the dynamic growth of humanoid systems are heralding the next stage of automation. Bosch is actively pushing ahead with key technologies for automation and robotics.

“Sophisticated sensor technology, software, and the efficient conversion of electrical energy into motion aren’t just technologically related to automated mobility; they’re the cornerstones of modern robotics,” said Stefan Hartung, chairman of the board of management of Robert Bosch GmbH.

Bosch was quick to respond to the growing demand for automation and robotics technologies and is already a sought-after and attractive commercialization partner and component supplier worldwide.

“With the advent of humanoid robotics, the demand for Bosch components and solutions is increasing”, Hartung added.

With its comprehensive expertise, the company is well-positioned to participate in the growth of the robotics market. Bosch sees the potential to develop a business worth billions in this field. The company is putting its faith in synergy effects to achieve this. “We’re combining proven technologies from various business sectors with visionary innovations to drive forward the industrial scaling of robotics – all the way to humanoids,” Hartung said. “We also hope that committing to this course will strengthen Europe as a technology location.” Moreover, Bosch is making targeted use of automation to increase the competitiveness of its German plants compared to the rest of the world, as well as to counteract the ever more acute shortage of skilled workers.

Robotics needs a delicate touch

“Bosch is moving the future on wheels and with arms,” says Tanja Rueckert, member of the board of management of Robert Bosch GmbH. The company is deploying its cross-domain automation expertise from the car to the factory to the home as its decisive advantage in shaping this growth market. Bosch is positioning itself not as a manufacturer of humanoid robots, but as a leading supplier and partner for the “brain and nervous system” of modern automation and robotics. At the heart of these flexible solutions is Bosch’s open ctrlX AUTOMATION platform. This makes robotics accessible, modular, and quick to integrate. The Bosch Rexroth division is currently implementing several customer projects in this area.

Robots need a keen sense of touch so that they can interact safely and precisely with their environment, whether in the factory or in the home. A tiny but indispensable technology gives robots precisely this tactile sense: microelectromechanical systems, known as MEMS sensors. They are the key to enabling robots to handle objects with the necessary finesse and react sensitively to physical contact. For example, it’s these sensors that give a robot the ability to precisely adjust its grip to a robust water glass or a delicate stemmed glass. “Humans have 4 million touch sensors. If we were to build robots with just as many sensors, then 4 years’ worth of worldwide sensor production would barely be enough for 12,500 robots,” Hartung says. This figure illustrates the immense potential in the future of automation and robotics. According to the Yole Group, a market research and strategy consultancy, the market for MEMS sensors is expected to grow to over 19.2 billion U.S. dollars by 2030 and achieve an average annual growth rate of 4 percent.

Bosch is working to further develop cognitive robots

To accelerate development in automation and robotics, Bosch is relying on a combination of in-house innovation and an open ecosystem approach. The company’s GmbH is an optimal unit that focuses on the development and commercialization of new robotics solutions. At the same time, Bosch is continuing to drive forward industrial scaling through strategic partnerships. For example, the company is working together with deep manufacturing expertise. Bosch also acts as a key partner for leading robotics startups from around the world, including Humanoid from the U.K., and other U.S. and Chinese partners, is bringing their prototypes to production scale. Bosch Robotics Center China (BROC) is driving forward the development of physical AI and the commercialization of robotics solutions.

In addition to the robots’ “intelligence,” Bosch’s strength lies in the crucial components that give robots their physical performance. Bosch Rexroth has a comprehensive portfolio of key components for modern robotics and factory automation. These include high-precision electric motors and powerful servo drives that ensure dynamic and precise movements, as well as CtrlX AUTOMATION for smart, flexible control of robots for a range of environments and requirements. Bosch also offers complex assemblies and subsystems that give robots the power, speed, and precision they need, meaning these components serve as the technological backbone for various automation tasks. Moreover, Bosch can provide support with factory equipment for robotics manufacturing, for example, with Rexroth conveyor systems.

Unique treasure trove of data from over 230 plants worldwide

Artificial intelligence (AI) is the engine that gives automation and robotics new capabilities. “The combination of cutting-edge electronics and mechanics with AI puts significant technological breakthroughs in automation and robotics within reach,” Rueckert says.

For example, it enables robots to perceive their environment, understand processes, and learn from experience. Bosch builds this key technology firmly into its strategy and uses it on two levels. First, the company is bringing AI models from the cloud directly into its physical products to enable automated operation. Second, Bosch already makes extensive use of AI in its own manufacturing.

“Our decisive competitive advantage is not the machinery alone, but the data from our global manufacturing network,” Rueckert says. This treasure trove of data is the raw material for the development of intelligent automation solutions in the future. In addition, to translate human expertise into machine-readable data, Bosch uses special data suits that record complex movement sequences as a basis for training.

The post Bosch Accelerates Automation and Robotics Drive appeared first on ELE Times.

Solutions, a global technology manufacturer of hardware and software. Key drivers of the global investments in AI infrastructure and AI server applications are currently the high demand for highly complex server boards, which is leading to an increased need for SMT solutions for technologically sophisticated manufacturing processes.

New order bookings in the first quarter were more than double last year’s amount. Business in Asia showed particularly strong growth. The company also saw a noticeable increase in demand for SIPLACE placement solutions in the Americas and in Europe. In light of these welcome developments, ASMPT SMT Solutions expects its business to keep growing strongly for the rest of fiscal 2026.

“The dynamic growth surrounding AI server applications has exceeded our already high expectations,” explains Josef Ernst, CEO of ASMPT SMT Solutions.

Especially when it comes to the assembly of highly complex server boards, the demands on precision, process stability, and productivity are rising dramatically. It is precisely in these applications that our solutions are currently demonstrating their strengths worldwide.

AI servers are placing new demands on electronics manufacturing.

Placement solutions for modern AI server boards must be capable of handling both heavy, large-format, high-performance BGAs and thousands of highly miniaturized components from 016008M size with great reliability, precision, and productivity.

The combination of ever-larger printed circuit boards, rising component complexity, and the highest demands on accuracy and process stability presents new challenges for SMT manufacturing. Consequently, there is a need for placement solutions that intelligently combine high speed, maximum precision, and stable processes. In this context, the interplay between integrated hardware and software, as well as global service, is becoming increasingly important.

“Today, our customers no longer evaluate individual machines alone, but rather the performance of complete solution environments,” says Josef Ernst. “Global presence, local support, and the close integration of hardware, software, and service are becoming increasingly important.”

Focus on the supply chain and delivery capability

At the same time, high demand is creating new challenges for global supply chains. Geopolitical uncertainties, rising logistics costs, and the highly dynamic market are increasing pressure on supply chains, manufacturing, and service organizations. ASMPT SMT Solutions is therefore making targeted investments in expanding global delivery and service capacities to reliably support customers worldwide.

“In market phases like these, it quickly becomes clear just how resilient a manufacturer really is,” explains Josef Ernst. “Our customers rely on us to deliver and provide first-class service worldwide. That is exactly where our focus lies right now.”

The post AI server Boards are Boosting at ASMPT SMT Solutions appeared first on ELE Times.

Nanoelectronics research center imec of Leuven, Belgium is evolving its 300mm RF silicon interposer into a system-level platform for the heterogeneous integration of III–V chiplets on Si-CMOS. By uniquely combining high-density embedded capacitors, a scalable modeling framework for passive components and laser-assisted bonding for III–V chiplet assembly, the platform lays the foundation for next-generation wireless (mmWave and sub-THz) systems, as well as RF-grade signal handling for ultrafast data-center applications...

Yesterday I started up an old Soviet gas discharge rectifier ВГ-176. submitted by /u/289_257 [link] [comments]

As India accelerates its transition to electric mobility, the focus is shifting from adoption to scale, efficiency, and affordability. Bosch is set to support this next phase by introducing its latest third-generation Silicon Carbide (SiC) semiconductors in India. Designed to improve the performance and efficiency of electric vehicles, the new chips will also contribute to the development of a stronger local mobility ecosystem.

Silicon carbide (SiC) semiconductors are central to improving the efficiency of electric vehicles. They control the flow of energy within the power electronics system – particularly in the inverter and ensure that energy from the battery to the electric motor is converted as efficiently as possible. With this new generation, Bosch is delivering approx 20% higher performance, supporting India’s rapidly growing EV market. For the end-user, this means longer driving ranges without larger batteries, improved battery utilization, and ultimately, a lower total cost of ownership.

“Our advanced SiC technology is designed to deliver the tangible benefits that Indian consumers demand – longer driving range, faster charging, and lower long-term costs,” said Sandeep Nelamangala, Joint Managing Director, Bosch Limited, and President, Bosch Mobility India. “By making high-efficiency power electronics more accessible, we are helping to unlock the full potential of the EV market, making clean, efficient mobility a reality for everyone in India.”

With over 60 million SiC chips already delivered worldwide, Bosch brings proven power semiconductor expertise to support the next phase of India’s electrification journey. The company continues to invest billions of euros in expanding its global semiconductor capabilities, creating a strong foundation for innovation, supply resilience, and future growth. As India advances its ambitions in electric mobility, localization, and advanced manufacturing, Bosch aims to support customers and ecosystem partners by bringing together global semiconductor expertise and local ecosystem development.

With its third-generation SiC chips, Bosch is taking this technology to the next level. “Our ambition is clear: we want to be a globally leading manufacturer of SiC chips,” said Markus Heyn, member of the Bosch board of Management and chairman of the Bosch Mobility business sector. “With our next-generation SiC chips, we are helping our customers put even more powerful and efficient electric vehicles onto the road.”

Bosch’s Gen 3 SiC technology enables more compact and efficient power electronics designs by reducing energy losses, improving thermal performance, and lowering system complexity and cooling requirements. Miniaturization is a key enabler for long-term cost efficiency, as it allows more chips to be produced per wafer. In this way, Bosch is contributing to making high-performance electronics more widely accessible.

The advantage makes advanced power electronics relevant not only for premium vehicles but also for mass-market EV segments, where efficiency, affordability, and reliability are critical due to the optimal combination. Bosch is bringing advanced semiconductor innovation closer to the needs of India’s evolving mobility landscape and supporting the next phase of efficient, scalable, and sustainable electric mobility in the country.

The post Bosch Introduces Third-Gen Silicon Carbide Chips for EV appeared first on ELE Times.

🎥 Відкрито R&D-лабораторію «Монтаж та експлуатація електротехнічного обладнання» KPI4U-2 чт, 06/11/2026 - 13:06

КПІ ім. Ігоря Сікорського відвідала делегація PCM & MAT Kosovo (Республіка Мальта) kpi чт, 06/11/2026 - 13:01

Обговорення перспективних напрямів співпраці між КПІ та американськими партнерами kpi чт, 06/11/2026 - 12:50

Vishay Intertechnology, Inc. announces an expansion of its ILHB series of Automotive Grade multilayer chip ferrite beads for high current filtering. The Vishay Dale devices now offer higher current capability, smaller case sizes, and a wider range of impedance values to meet a broader set of EMC noise reduction requirements.

The ILHB series is now available in 0402, 0603, 0805, 1008, and 1206 case sizes with current handling up to 6 A and impedance values from 10 Ω to 2700 Ω. The expanded lineup allows designers to achieve higher current handling in smaller packages, while delivering two to three times the current capability for the same package size and impedance value.

The immense range of sizes, current handling, and impedance values allows the ILHB ferrite beads to be used in a wider array of EMC noise reduction applications. These include high current, high frequency, and signal-specific filtering in automotive energy distribution and management systems; industrial automation systems; home and building controls; computers and computer peripherals; consumer devices; white goods; medical instrumentation; avionics; and telecom infrastructure.

The ILHB product datasheets optimize with additional design parameters that help engineers estimate bead performance across more frequencies without consulting multiple performance graphs to simplify device selection. These parameters include impedance peak value and frequency, the frequency at which impedance drops below the nominal value, and the X- and R-frequency crossover point.

The AEC-Q200 qualified devices feature a silver (Ag) inner conductor with copper (Cu), nickel (Ni), and tin (Sn) plating. The ferrite beads operate over a temperature range from -55 °C to +125 °C and are RoHS-compliant, halogen-free, and Vishay Green.

Device Specification Table:

Part number	IHLB-0402	IHLB-0603	IHLB-0805	IHLB-1008	IHLB-1206
Case size	0402	0603	0805	1008	1206
Dimensions (mm)	1.0 x 0.5 x 0.5	1.6 x 0.8 x 0.8	2.0 x 1.2 x 0.85	2.5 x 2.0	3.2 x 1.6
Z at 100 MHz (W)	10 to 1800	22 to 2500	17 to 2700	300 to 600	19 to 1000
DCR max. (mW)	18 to 2400	7 to 1800	10 to 800	30	10 to 300
Rated DC current at 85 °C (1) (A)	0.05 to 3.1	0.05 to 6	0.2 to 6	4	0.5 to 6
Zpk (2) (W)	19 to 3738	28 to 2526	21.6 to 31 868	554 to 670	32.68 to 1167
F at Zpk (3) (MHz)	97 to 1329	78 to 1000	72 to 1132	122 to 155	61 to 2921
Z typ. at 100 MHz (W)	10 to 2038	22 to 2200	17 to 2713	309 to 517	17.2 to 1000
F at ZDO (4) (MHz)	125 to > 10 000	100 to 8000	84 to 8000	138 to 222	100 to > 10 000
XL / XR x over (5) (MHz)	31 to 710	26 to 439	23 to 298	100 to 117	25 to 120

 

• Rated current is the DC that causes a 40 °C temperature rise at 20 °C ambient
• Zpk = peak of impedance curve
• F at Zpk = frequency of Zpk
• F at ZDO = frequency above 100 MHz where Z drops to nominal Z
• XL / XR x over = crossover point for inductive reactance and resistance impedance

The post Vishay Extends ILHB Ferrite Beads for Wider Automotive EMC Support appeared first on ELE Times.

Qorvo introduces an X-band radar front-end solution that enables defense system designers to achieve higher performance without increasing size, weight, or prime power. The design targets modern phase array and multifunction sensors. The solution combines transmit power, efficiency, and receive sensitivity in a single compact module, addressing key challenges in next-generation radar design.

 

The Qorvo QPF5012 is a fully integrated X-band transmit/receive front-end module operating from 8.5 to 10.5 GHz, delivering 10W of transmit power.  With 42 percent power-added efficiency and 2.1 dB noise figure in a 7 x 5 mm package, the QPF5012 enables designers to extend radar range, reduce thermal load, and improve detection sensitivity without increasing system complexity. 

“Radar designers have historically been forced to trade off output power, prime power, or sensitivity,” said Doug Bostrom, general manager of Qorvo’s Defense and Aerospace business. “With the QPF5012, Qorvo brings all three together in a compact integrated front-end module, helping customers simplify design, reduce thermal constraints, and improve real-world radar performance.”

 

QPF5012 is specifically built for X-band phased array radar applications where size, weight, and power (SWaP) and thermal performance are critical. Its high level of integration reduces component count and simplifies system design while maintaining constant efficiency and RF output power across changing antenna loads. This enables AESA systems to deliver more consistent RF performance across varying scan angles. Qorvo enables this integration through vertically integrated RF design expertise, advanced multi-technology packaging, and trusted manufacturing capabilities.

Key Features of QPF5012:  

• 10W saturated transmit power across 8.5 to 10.5 GHz  
• 42% power-added efficiency to reduce prime power consumption and thermal load  
• 2.1 dB noise figure to improve receive sensitivity and detection accuracy  
• Integrated T/R functionality in a compact 7 x 5 mm module to reduce SWaP and design complexity. 

 

By delivering power, efficiency, and sensitivity together in a single integrated module, Qorvo enables defense radar designers to overcome traditional design constraints and achieve higher system-level performance in a compact front-end architecture.

The post Qorvo’s New Compact Front-End Redefines X-Band Radar Performance appeared first on ELE Times.

US-based aerospace & defense technology company Northrop Grumman Corp has fabricated a new gallium nitride (GaN) chip that sets what is claimed to be a new performance standard for military and commercial use...

There’s considerable interest in leveraging the bandwidth and other potential virtues of terahertz waves that occupy the spectrum between the conventional RF and optical worlds, generally considered to span 100 GHz (3 mm wavelength) to 10 THz (30 μm). However, managing electromagnetic energy at these wavelengths presents many challenges, as they are too short for most electronics, yet too long for all-optical components.

Nonetheless, there’s a significant amount of ongoing research in developing the materials and components needed, especially with many potential applications, including the emerging 6G standards being developed now.

At these frequencies and corresponding wavelengths, signal energy must be conveyed via waveguides—discrete wires won’t do, of course. But making the needed waveguide physical transitions is difficult when they are fabricated in silicon as part of a larger set of on-chip functions.

Addressing this issue, a team of researchers at The Skolkovo Institute of Science and Technology—or Skoltech, a private institute in Moscow—working with a team from KTH Royal Institute of Technology in Sweden, has developed a key technology that could support silicon-based terahertz waveguides and their on-chip transitions.

Their solution is based on carbon nanotubes, one of those amazing materials that keeps offering solutions to diverse problems. The single-wall carbon nanotube (SWCNT) was discovered in 1991 (see “A Brief Introduction of Carbon Nanotubes: History, Synthesis, and Properties“). Like fullerene and graphene, SWCNTs are one of the allotropes of carbon.

Allotropes present a different structural form of the same chemical element within the same physical state; because their atoms are bonded differently, allotropes have vastly different physical and chemical properties from each other—think diamond versus graphite.

A key challenge in building these complex terahertz arrangements is devising properly matched terminations. Without proper termination, reflections at device discontinuities can cascade, thus degrading performance and altering the intended operational profile. In addition, these terminations are necessary for characterization of multi-port devices such as directional couplers, where the unused ports must be terminated with matched loads.

The conventional solution is to use adiabatic or impedance-matched tapering of the waveguide cross-section to free space, gradually expanding the guided mode to induce radiation losses while operating as a dielectric rod antenna. However, the efficiency of these structures depends on the length of the tapering, therefore consuming valuable chip area; it can also radiate power in undesirable directions, thus complicating packaging, limiting integration density, and creating electromagnetic pollution.

Note that in the adiabatic-coupling approach, the optical mode is coupled from one waveguide to another by a slow change of a waveguide parameter (width, thickness, or both) such that the optical mode remains in the fundamental mode and does not couple to unwanted higher-order modes. As a result, the tapered waveguides need to be long enough to meet the requirements of the adiabatic conditions of slow change of waveguide parameter. However, at the same time, they need to meet the device compactness requirement. Therefore, there is a trade-off to be made

The research team devised and tested a carbon nanotube-based coating that blocks electromagnetic radiation, thereby creating waveguides compatible with terahertz wavelengths. The ultrathin single-walled carbon nanotube films that they synthesized are similar to those that they used previously to create small-scale components, such as lenses and antennas, but with a big difference, as this time it’s not for standalone components. Instead, they leveraged carbon-based material to control electromagnetic radiation in 2D-integrated optical circuits, eliminate interference, and enable additional functionality.

They demonstrated a compact, broadband termination by coating silicon dielectric rod waveguides (DRW) with ultrathin single-walled carbon nanotube films. Fabricated via a floating-catalyst (aerosol) chemical vapor-deposition process, the film thickness varies from 2 to 53 nm and was characterized in the 140-220 GHz range. A 53-nm thick film introduced up to 47 dB of attenuation while maintaining over 20 dB reflection loss, confirming nearly reflection-free absorption (Figure 1).

Figure 1 Reflection measurements of the SWCNT-loaded DRWs show ∣S11∣ for the 6-mm long samples (a) and ∣S11∣ for the 12-mm long samples (b). The light grey line is baseline reflection after calibration by measuring a thru-standard (flanges of the frequency extenders connected); dark grey is the reflection coefficient of an unloaded DRW. Source: Nature Communications

Shielding analysis shows absorption dominates over reflection, and they achieved a record specific shielding efficiency of 5.5 × 109 dB cm2/g (Figure 2).

Figure 2 Shielding efficiency components for the SWCNT-coated dielectric waveguides: reflection component SER (a, b), absorption component SEA. (c, d), and total shielding SET (e, f) for 6-mm (left column) and 12-mm (right column) samples over 140-220 GHz, with light grey as the equivalent shielding efficiency of an unloaded silicon waveguide provided for reference. Source: Nature Communications

This approach offers a footprint-efficient solution for high-density terahertz circuits without bulky, radiative terminations. The work is presented in their paper “Ultrathin Single-Walled Carbon Nanotube Surface Wave Absorbers for Terahertz Dielectric Waveguides” published in Nature Communications. It’s unfortunate that the paper does not have any microphotographs of the SWCNT waveguide and transitions in silicon, so you’ll just have to visualize those yourself.

Have you had any interaction with or uses for carbon nanotubes? If so, in what way? Do you see a role for them in any of your projects, whether terahertz or other?

Bill Schweber is a degreed senior EE who has written three textbooks, hundreds of technical articles, opinion columns, and product features. Prior to becoming an author and editor, he spent his entire hands-on career on the analog side by working on power supplies, sensors, signal conditioning, and wired and wireless communication links. His work experience includes many years at Analog Devices in applications and marketing.

Related Content

• Nanotube sensors spark new use cases
• Carbon nanotubes boost image sensor sensitivity
• Metadevices may fill the terahertz component gap
• Optical combs yield extreme-accuracy gigahertz RF oscillator

The post Carbon nanotube coating creates on-chip terahertz waveguides appeared first on EDN.

Fixed a couple of old broken carriage clock recently with some STM32s, e-displays & some bling. Setup: * Microcontroller - NUCLEO_L432KC * Display - Waveshare 2.9" & 3.7" E-Paper Displays * Sensor - DHT Temperature & Humidity Sensor with 100k pull-up resistor between the 3.3V rail and the DATA/OUT line. * Power - Voltage Regulator HT7333 and Micro USB 18650 Lithium Battery Charger Module * Bling - Some pencil art with gold surround, gold run on transfers & corner protector gold filigree submitted by /u/spamonster [link] [comments]

The ASM330LHHG1 automotive qualifies as an Inertial Measurement Unit (IMU), which operates from -40°C to 125°C, mounts in vehicle zones, including those where the ambient temperature may be a concern. Combining low-noise sensors, temperature compensation, and a 6-channel synchronize output, the IMU fulfils the industry’s need for greater dead-reckoning accuracy to support navigation and positioning.

Today’s cars, vans, and trucks, as well as industrial and agricultural vehicles, can leverage increasingly accurate GNSS positioning technologies for applications such as routing, tracking, navigation, and driver assistance. These new and latest systems need high-quality dead reckoning to maintain continuity between satellite updates and provide effective fallback during GNSS outages or corruption, ensuring superior performance and greater resilience.

ST’s ASM330LHHG1 meets this need by delivering 3-axis accelerometer and 3-axis gyroscope data through its synchronized output that ensures consistent signal timing for dead-reckoning calculations, motion-data correlation, and GNSS fusion. Both sensors leverage the latest MEMS processes for low noise and benefit from built-in temperature compensation for enhanced stability.

The IMU provides accurate data for other non-safety applications throughout the vehicle, with an accelerometer full-scale range of ±16g and an extended gyroscope range covering ±125dps to ±4000dps with minimal bias drift. These include vehicle-to-everything (V2X) systems, telematics, eTolling, anti-theft, impact detection, crash reconstruction, driving comfort, vibration monitoring and compensation, and general motion-activated functions.

The post STMicroelectronics Unveils Ultra-Precise Automotive IMU appeared first on ELE Times.

Altera is now sampling its Agilex 9 Direct RF AGRW039 wideband SoC FPGA for aerospace, defense, and communication systems. According to Altera, the device delivers a 40% increase in compute capability per square millimeter. It also provides 45% greater logic and DSP density than the previous generation and supports DDR5 and LPDDR5 memory technologies.

With integrated 64-Gsample/s wideband RF and increased compute and memory resources, the programmable device eliminates the need for multichip designs and enables advanced beamforming, radar, and data cube processing. The AGRW039 provides high-bandwidth signal capture and generation, allowing customers to scale performance while maintaining design flexibility.

Agilex 9 Direct RF SoC FPGAs combine high-speed data converters, programmable logic, and processing elements in a single package. The integrated architecture helps reduce system complexity and power consumption for wideband RF applications that require real-time performance.

Production silicon and development kits for the Agilex 9 Direct RF AGRW039 are expected to be available in Q3 2026.

Agilex 9 Direct RF series

Altera

The post SoC FPGA advances wideband RF processing appeared first on EDN.

Navitas has developed a TO-247 package offering more than 6000 V of isolation for its 1200-V, 2300-V, and 3300-V SiC MOSFETs. Designated the UHV-TO-247-4-ISO, the through-hole package supports direct-cooled thermal management through a reflow-compatible isolated thermal pad. It also provides over 12 mm of pin-to-pin creepage, enabling module-level performance in a compact discrete form factor.

Compared to standard non-isolated through-hole packages, the UHV-TO-247-4-ISO reduces the need for external high-voltage isolation while improving thermal and EMI performance. These benefits extend to high-voltage grid-tied power conversion systems, solid-state transformers, battery energy storage systems, and renewable energy applications.

The UHV-TO-247-4-ISO delivers integrated high-voltage isolation using an AlN substrate, reducing die-to-heatsink capacitance and helping lower common-mode noise and radiated EMI. Its reflow-compatible, direct-cooled thermal interface enables direct mounting to liquid- or air-cooled heatsinks, improving thermal performance while eliminating the need for external TIM and isolation materials. The package also enhances thermal cycling and power cycling lifetime through its AlN/AMB construction and robust heatsink interface.

To request samples or additional product information, please contact a Navitas sales representative or email info@navitassemi.com.

Navitas Semiconductor 

The post TO-247 SiC package boosts high-voltage isolation appeared first on EDN.