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Compact Discrete Voltage Regular I Made
| | submitted by /u/BlownUpCapacitor [link] [comments] |
Basic Principles and Implementation of the Quadrature FM Demodulator
EEVblog 1716 - University Dumpster Diving: Kikusui Oscilloscope
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Apple Looks to the Future of AI With New M5 Processor
ST launches four 5-MP image sensors

STMicroelectronics introduces a new family of 5-megapixel (MP) CMOS image sensors: the VD1943, VB1943, VD5943, and VB5943. These advanced BrightSense sensors accelerate the development of vision applications across a variety of industries, including industrial automation for machine and robotic vision, advanced security including biometric identification and traffic management, and smart retail applications such as inventory management and automated checkout.
(Source: STMicroelectronics)
Suited for high-speed automated manufacturing processes and object tracking, the new sensors provide hybrid global and rolling shutter modes, enabling developers to optimize image capture for their specific applications. This delivers motion-artifact-free video capture (global shutter), and low noise, high detail-imaging (rolling shutter).
Featuring a compact 2.25-µm pixel and advanced 3D stacking, the sensors deliver high image quality in a small footprint. The sensors feature a die size of 5.76 × 4.46 mm and a package size of 10.3 × 8.9 mm with an industry-leading 73% pixel array to die surface ratio. This enables integration into space-constrained embedded vision systems without compromising performance, ST said.
Delivering high-quality imaging in challenging environments, these sensors leverage backside illumination and capacitive deep trench isolation pixel technologies to enhance sensitivity and sharpness, particularly in low lighting conditions. Single-frame on-chip high dynamic range improves detail visibility in both bright and dark areas.
The RGB-IR variants feature on chip RGB-IR separation, eliminating additional components and simplifying system design. This capability supports multiple output patterns, including 5-MP RGB-NIR 4×4, 5-MP RGB Bayer, 1.27-MP NIR subsampling, and 5-MP NIR smart upscale, with independent exposure times and instant output pattern switching. This reduces costs while maintaining full 5-MP resolution for both color and infrared imaging, ST said.
The four sensors are currently available for evaluation and sampling, with mass production scheduled for February 2026. Documentation, evaluation kits, and product samples are available.
The post ST launches four 5-MP image sensors appeared first on EDN.
DC/DC converters add digital monitoring and control

XP Power announces a digital version of its HRF15 series of 15-W DC/DC converters with output voltage and current programming through a PMBus via I2C. These new capabilities address the growing need for automation and remote control in high precision equipment, including mass spectrometry, scanning electron microscopy, and transmission electron microscopy for semiconductor inspection and analytical research.
(Source: XP Power)
Compared with the company’s precision analog version launched earlier in 2025, the digital interface of the HRF15 DC/DC converters makes integration simpler, reduces setup time through a graphical user interface, and accelerates product development. Reliability also improves with advanced monitoring and programming.
Other key features include power supply status flags that deliver visibility into system health and performance, enhancing uptime and protecting sensitive instruments; and data logging and real-time diagnostics that converts complex internal data into actionable insights, enabling users to make quick, informed decisions that result in lower operating costs and enhanced application safety. In addition, multi-unit synchronization enables scalable power architectures.
Suitable for noise-sensitive applications, the HRF15 series features extremely low ripple down to 0.001% (10 ppm), critical for high performance. The units exhibit high stability over time at 10 ppm/hr, delivering consistency and repeatability in sensitive processes. Load and line regulation, down to 0.001%, delivers high performance even in load-dependent applications or where input voltage fluctuates. They also have a low temperature coefficient of 25 ppm/°C, minimizing environmental performance influences.
Single-output voltages can be specified at 10 kV, 12 kV, and 15 kV and each unit can deliver 15 W of power from a 24-VDC input. The output rail is fully adjustable for constant current and constant voltage from 0 to 100%, which addresses a wide range of loads.
The HRF15 series carries UL6101O and UL62368 safety approvals. Housed in a case measuring 33.0 × 72.4 × 161.0 mm, and weighing approximately 465 g, the compact units ease integration into space-constrained applications. They are currently available from Avnet Abacus or direct from XP Power with a three-year warranty.
The post DC/DC converters add digital monitoring and control appeared first on EDN.
Custom Multi-Timezone World Clock with ESP32 and 6 TFT Displays in a CNC Aluminum Case
| | I built this custom 6-screen world clock powered by an ESP32. The hardware part (soldering + wiring) took about 8 hours, It runs on a TRACO 12V→5V converter and sits in a CNC-cut aluminum enclosure I designed and assembled myself. It also includes a simple web interface for diagnostics and editing the city/timezone configuration (First picture: 90% finished clock(missing sideframe, bolts) Second: spaghetti) [link] [comments] |
Diode classifications

We might tend to take the word “diode” for granted if we’re thinking of a “diode” as just a two-lead or two-terminal device that gets used in this or that place for this or that purpose. It can become a bit humbling to contemplate just how many kinds of diodes we actually have at our disposal and what they’re used for.
Let’s take a brief, if super-simplistic, look. The schematic symbols shown for each case are not the only applicable symbols I’ve ever seen. In some cases, there are symbol variations in use, but these few shown here will just have to suffice for now.
1. Rectifier Diode (power, signal)
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This is a device that simply carries an electrical current in one direction and blocks current flow in the other direction. It can be a small and familiar device like the 1N4148 or something pretty big like a 1N4045 275A 100-V rated diode for a bridge rectifier for wind turbine generator service, or bigger still. It can also be a piece of pencil lead touching a rusty razor blade, a stiff wire (a cat’s whisker) making a point contact on a block of galena, or a low-power, point-contact germanium diode like the 1N34A.
2. Schottky Diode (hot carrier)
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This kind of diode is made by forming a junction between a metal (many different types of metal can be used) and some semiconductor material. It has the advantage of a lower forward voltage drop than a semiconductor-to-semiconductor diode and very little storage charge, resulting in a really fast turn-off time.
3. Step Recovery Diode
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This device is a semiconductor-to-semiconductor diode with a useful amount of stored charge that allows a brief conduction time in the reverse direction. Time things right and you can cause the reverse conduction to halt at the 270° point of an input RF sinusoid when the storage charge very abruptly runs out. Extremely abrupt current halts make this device a really nice harmonic generator in frequency multiplier applications.
4. PIN Diode (P-type semiconductor, intrinsic semiconductor, N-type semiconductor)
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This device is a semiconductor-to-semiconductor diode with a useful amount of stored charge that allows intentional conduction time in the reverse direction. For high enough frequencies, typically 1 GHz and up, this diode’s dynamic impedance can be varied by controlling the DC bias current. That variable impedance is useful for making programmable signal attenuators.
5. Photo Diode

A photo diode will generate an electrical output in response to stimulation by light. Some devices can even be used to detect ultraviolet and/or X-rays.
6. Light Emitting Diode (LED)

A light-emitting diode will generate light in response to stimulation by an electrical current. Some diode devices can generate visible light, as red, yellow, amber, green, blue, or white, while others can generate infrared or ultraviolet. My dentist uses a hand-held ultraviolet LED light to speed up the setting process of dental cement. I questioned him about that. He used to expose dental cement to an ultraviolet lamp.
7. Laser Diode

A laser diode uses a PIN diode structure to pump the intrinsic region in the center of that diode into laser action inside an optical cavity. One of these things is hiding inside that laser pointer of yours, and another one is in your CD player.
8. Zener Diode
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A Zener diode is an ordinary diode, but one whose reverse voltage characteristic has a deliberately low breakdown threshold. There is very little current flow through the Zener diode in response to the application of a reverse bias voltage until that reverse bias voltage gets high enough to cross the breakdown threshold and induce a substantial current flow. Voltage regulation is a practical application of this effect.
9. Transient Absorbing Diode
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A transient-absorbing diode is very much like a Zener diode, but with the ability to withstand brief intervals of high power during breakdown. Protection of electronic circuitry from otherwise damaging voltage transients is the practical purpose of these devices.
10. Back Diode
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A back diode is a diode whose reverse breakdown threshold is very low, even lower than the forward voltage drop of other diodes and even lower than the forward voltage drop of the back diode itself. Low-level RF detection is the practical application for these devices.
11. Varactor Diode
A varactor diode is a diode that is normally operated with reverse voltage applied. The capacitance across the reverse-biased device varies inversely with the applied reverse bias voltage. RF tuning, especially the tuning of voltage-controlled oscillators, is the most common practical purpose of these devices.
12. Tunnel Diode (Esaki)
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Tunnel diodes are diodes whose voltage versus current characteristic is discontinuous. They have “voltage-controlled negative resistance” properties. As I personally recall, they were invented in 1957 and were once thought to herald a new age in semiconductor technology. Heathkit even made a tunnel diode DIP oscillator, superseding its earlier grid dip oscillator product. Today, tunnel diodes are still available, although not too commonly used.
13. Gunn Diode
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Gunn diodes are single-material semiconductors with no PN junction; nevertheless, they exhibit a negative resistance property that can be exploited to make a microwave oscillator. The lack of a PN junction makes some folks object to the word “diode” as a descriptor for these devices, but the term has become a well-known colloquialism, so who am I to try to change things?
14. Current Limiting Diode

This device might not be called a “diode” either, but as with the Gunn diode, there is a commonly used colloquialism. This device is really a junction field effect transistor (JFET) with the gate tied to the source. The voltage versus current characteristic curve is that of a JFET with Vgs of zero, which, when the device is pulled out of JFET saturation by a sufficiently high voltage, behaves as a constant current driver.
15. Vacuum Diode (Yes, we’re looking at tubes too.)
We may have come full circle at this point. This device is thermionic and, just like its solid-state counterparts, it will conduct current only in one direction. Think 5Y3GT and 35Z5GT. If those part numbers don’t look familiar, go ahead and look them up.
16. Mercury Vapor Diode

A close cousin to the vacuum diode, these devices have an internal atmosphere of heated mercury. In fact, you have to allow enough time (60 seconds if I recall correctly) for the filament to make the mercury hot enough to become a vapor before you try to press the diode into actual service. Also, the device must be operated only in the vertical position with the base pins at the bottom and the plate cap on top. When this tube is doing its thing, the ionized mercury glows blue. Think of the 866A, and again, if that part number doesn’t look familiar, go ahead and look it up.
17. Xenon Gas Diode

Another vapor-dependent diode, but this time the atmosphere is xenon. There is no need to heat the xenon before use, as it is already a gas. When this tube is doing its thing, the ionized xenon glows a somewhat yellowish-white color. Think of the 3B28 and again, if that part number doesn’t look familiar, go ahead and look it up.
18. Magnetron

A magnetron is essentially an educated vacuum tube diode used for generating microwave signals. (Please see “Magnetron.”)
19. Cold Cathode Gas Voltage Regulator

This device isn’t normally referred to as a “diode”, but it meets my idea of being one. It is filled with an ionizable gas, which, when it does get ionized, the plate-to-cold-cathode voltage tends to be stable. It’s a lot like a zener diode in that sense, but it has one troublesome trait of which to be aware. The “striking voltage” for which ionization begins is quite a bit higher than the steady state voltage under steady state gas ionization. That yields a negative resistance property, which, if you put capacitance in parallel with this device, yields relaxation oscillation. When this tube is doing its thing, its gas has a violet glow. Think 0A2 (That first character is a numeral zero, not a letter “oh”.) and yet again, if that part number doesn’t look familiar, go ahead and look it up.
I just happen to have one of those on hand:

20. Mogen Diode

An imaginary device dreamed up by the late Bob Pease. No further discussion necessary.
John Dunn is an electronics consultant, and a graduate of The Polytechnic Institute of Brooklyn (BSEE) and of New York University (MSEE).
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µA741: The Op Amp That Made Analog Simple
Tech Diplomacy: India’s Strategic Power Play in the Global Arena
In consideration of the escalating global tensions and the growing importance of technology as a strategic measure, it is imperative for India to effectively harness both its geopolitical flexibility and technological aspirations in order to influence the forthcoming narrative, rather than merely adapting to it.
The upcoming power shifts will pivot on technological innovations rather than traditional trade agreements or territorial disputes. The future dynamics will be shaped by advancements in semiconductor chips, software code, and cybersecurity measures and more.
The convergence of the world’s two largest elements of influence – geopolitics and technology, is increasingly significant. The U.S.-China rivalry has evolved far beyond issues like tariffs or Taiwan; it now revolves around determining the dominant force in areas such as AI, semiconductors, quantum technology, and space exploration. Each action taken, whether it’s an export ban, a satellite launch, or the implementation of data regulations, serves as a strategic geopolitical statement in this high-stakes competition.
In the contemporary global landscape, there exists a new form of conflict often referred to as the digital cold war. A significant event that unfolded in 2024 was the United States’ decision to prohibit the use of Chinese connected car technology. This action led to a retaliatory move from China, where they openly released their artificial intelligence models to contest the prevailing Western supremacy in the field. It is crucial to note that the battlefield in this modern era of conflict is not defined by physical borders but by the intricate interplay of algorithms and technological advancements.
Tech is no longer just an industry; it has evolved into essential infrastructure that plays a critical role in shaping various aspects of our lives. India’s Digital Public Infrastructure (DPI), encompassing services ranging from Aadhaar to UPI, has transcended national boundaries to become a significant soft power export.
Despite India’s $10 billion incentive scheme successfully attracting major players in the semiconductor industry like Micron, AMD, and Tower Semiconductor, the establishment of fabs remains a time-intensive endeavor. However, India can strategically focus on dominating chip design, intellectual property (IP) creation, and nurturing talent.
Cybersecurity is a pressing concern in India. Emerging threats such as AI-powered malware, ransomware, and supply chain attacks are on the rise.
Geopolitics has evolved beyond traditional diplomacy into a realm where data plays a crucial role. India’s implementation of data localisation laws, its approach towards cross-border data flows, and its emphasis on developing indigenous cloud infrastructure demonstrate strategic moves with geopolitical implications. The underlying premise is clear: whoever controls the data also controls the narrative.
India’s presence in space is gaining momentum, evident through increasing commercial launches by the Indian Space Research Organisation (ISRO). India’s progression must advance from being a mere launchpad to assuming a leadership role in the space domain.
The field of quantum computing represents another frontier where India is making significant strides. The National Quantum Mission, initiated in 2023 with funding amounting to ₹6,000 crore, targets the development of 50–100 qubit systems by 2026.
India is currently making its point very clear. The pathway involves becoming a tech leader that no more relies on Western platforms and Chinese hardware. India chooses to assert itself as a tech powerhouse by developing its own systems, influencing global standards, and sharing its expertise in digital governance.
Moreover, India is no more a mere geopolitical pawn, reacting to external changes, rather it is emerging as a significant player that actively shapes international regulations. These two key tools are now at India’s disposal – geopolitics and technology.
Devendra Kumar
Editor
The post Tech Diplomacy: India’s Strategic Power Play in the Global Arena appeared first on ELE Times.
How Machine Learning Is Shrinking to Fit the Sensor Node
Code-free LED driver simplifies automotive LED design

As LED systems are increasingly used in automotive applications, Melexis develops a highly configurable, code-free LIN LED driver that simplifies the development of dynamic RGB-LED automotive ambient lighting applications. In addition to reducing development time, the MLX80124 also eliminates the need for embedded software development expertise, Melexis said.
“This is a new level of product for Melexis. With its built-in functionality and full configurability, this IC offers engineers a radically simpler way to create automotive ambient lighting systems—without writing any code,” said Michael Bender, product line director, Melexis, in a statement. “As the world’s first code-free LIN RGB LED driver, the MLX80124 represents a major shift in how automotive lighting electronics are developed. It dramatically shortens design cycles while maintaining all the robustness and functionality expected by OEMs and tier 1s.”
(Source: Melexis)
The MLX80124 smart LIN RGB ambient light controller features an intuitive graphical user interface that engineers use to access configurable parameters without writing or compiling code. It features high-voltage output drivers, each offering configurable current sources up to 60 mA to support RGB ambient lighting configurations. It is fully qualified to AEC-Q100 and compliant with ISO 26262 up to ASIL B for automotive-grade ambient lighting systems, providing full lighting functionality.
The LIN LED driver delivers precise, LED-agnostic RGB color mixing with temperature compensation. Engineers only need to input the correct optical data for their selected LED.
Other features include a suite of diagnostic features, including open/short detection and supply monitoring. The operating temperature range is -40°C to 125°C.
The MLX80124 LIN LED driver, developed using advanced bipolar-CMOS-DMOS technology, is housed in a compact SOIC-8 package and features pin-to-pin compatibility with other Melexis drivers such as the MLX81124 or MLX81123. It is available now.
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Secured prepaid tags improve gift card security

Infineon Technologies AG launches two new secured prepaid tags for closed-loop gift cards, reducing the risk of tampering. These new solutions join Infineon’s secured EMV prepaid tag for open-loop gift cards.
(Source: Infineon Technologies AG)
The U.S. Federal Trade Commission reported losses of $212 million for gift or reload cards in 2024. The new secured prepaid tags target closed-loop gift cards, which are processed in retailer-specific or closed-loop environments, and replace the need for visible codes, barcodes, or magnetic stripes with a secured chip using cryptographic mechanisms.
The chips can be accessed using near-field communication (NFC) devices by using a consumer’s phone authenticated with the necessary data, allowing both retailers and consumers to tap the gift card for activation, check the balance, and redeem assets, Infineon said.
Infineon’s secured EMV prepaid tag solution helps mitigate fraud issues for open-loop gift cards by enabling tap-and-pay at any point-of-sale merchant device or retail outlet processed via payment networks.
Infineon’s first partner in the gift card industry is Karta Gift Card Ltd. The company provides support of AES encryption protocols and processing capabilities, offering cryptographic validation to avoid gift card cloning, skimming, and replay attacks, Infineon said.
Infineon’s prepaid tag solutions for gift cards are available today. The new solutions are fully compatible with existing manufacturing infrastructures for smart cards and paper tickets, and the secured EMV prepaid tag solution is fully EMV compatible, supporting the latest approved Visa and MasterCard applets.
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Ascent Solar and Defiant Space partner on global defense & national security and space market opportunities
Renesas Releases Magnet-Free Inductive Position Sensors and Design Tool
1-GHz MCUs add dual-core flexibility

Renesas RA8M2 and RA8D2 MCUs integrate dual CPU cores—a 1-GHz Arm Cortex-M85 and an optional 250-MHz Cortex-M33—delivering over 7300 CoreMark points. RA8M2 devices suit general-purpose use, while RA8D2 MCUs target high-end graphics and HMI applications.

Both groups employ Arm’s Helium vector extension to accelerate DSP and machine-learning workloads. They provide up to 1 MB of MRAM and 2 MB of SRAM, including 256 KB TCM for the Cortex-M85 and 128 KB TCM for the Cortex-M33. The lower-power Cortex-M33 can act as a housekeeping MCU, handling system tasks while the high-performance Cortex-M85 remains in sleep mode, waking only as needed for compute-intensive operations.
With advanced graphics and imaging capabilities, the RA8D2 drives high-resolution TFT-LCDs for rich HMI designs. Its graphics controller supports up to 1280×800 displays via RGB or 2-lane MIPI DSI interfaces, aided by a 2D drawing engine that offloads rendering from the CPU. Camera and audio interfaces include 16-bit CEU and MIPI CSI-2 for vision AI, plus I²S and PDM inputs for voice-enabled applications.
The RA8M2 and RA8D2 MCUs are available now, supported by the Renesas Flexible Software Package for application development.
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TMR current sensor suits high-speed power stages

With 10-MHz bandwidth and 50-ns response time, Allegro’s ACS37100 XtremeSense tunneling magnetoresistance (TMR) current sensor enables precise current measurement. It is designed for power-conversion systems using fast-switching GaN and SiC FETs, including EV chargers, solar string inverters, and server power supplies.

At sub-MHz frequencies, conventional magnetic sensors often lack the speed and accuracy needed for stable control and protection loops. The ACS37100 overcomes these limits with its high bandwidth and fast response, providing the high-fidelity current feedback essential for high-speed switching control.
Using XtremeSense TMR technology, the ACS37100 maintains a low noise level of 26 mA RMS across the full DC to 10‑MHz bandwidth, with ±2% sensitivity error over temperature. A voltage reference output supports differential routing in noisy environments, while a fault output provides an adjustable threshold for fast open-drain overcurrent detection.
The device provides reinforced isolation capable of withstanding 5 kV for 60 s (UL 62368‑1) and a basic working voltage of 1097 V. AEC‑Q100 Grade 0 qualification ensures operation over a -40 °C to +150 °C range. Its SOICW‑16 package offers 1.2 mΩ conductor resistance and 8 mm creepage and clearance.
Samples and evaluation boards are available to aid development.
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RF amplifier powers GSM, FM, and UHF devices

Manufactured on a GaAs process, the QPA9510 RF power amplifier from Qorvo covers a frequency range of 100 MHz to 1 GHz. It delivers +35 dBm P1dB output and up to 34 dB gain, with on-chip analog gain control over a 70 dB range.

The QPA9510 serves as the final RF amplifier in GSM handsets for the 900‑MHz band and is also suited for FM and UHF applications. It can be tuned across any sub-band within its operating range and achieves 55% efficiency, extending battery life in portable radios and IoT devices. The amplifier operates from a single +2.8 V to +3.6 V supply.
When paired with Qorvo’s low-noise amplifiers, digital step attenuators, and RF switches, the QPA9510 enables complete RF front-end designs for efficient transmit and receive chains in linear communication systems. Housed in a compact 3×3 mm QFN package, it also features a pin-compatible design for reuse across product families.
The QPA9510 and evaluation board are now available through Qorvo’s authorized distributors and on Qorvo.com.
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