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Ук Дара Чан: "Люблю. Творю. Надіюсь" Інформація КП ср, 05/07/2025 - 13:34

As graphics processing units (GPUs) keep getting more powerful, so do the power requirements at the board level. Intermediate bus converters (IBCs) which convert for example a 48 V input voltage to a lower bus voltage are becoming more important for energy efficiency, power density, and thermal performance in AI data centers. Infineon Technologies AG announced that its OptiMOS 6 80V power MOSFETs in a compact 5×6 mm² dual side cooling package have been integrated into the IBC stage of an AI server platform of a leading processor manufacturer. Application tests show an efficiency increase of around 0.4 percent compared to previously used solutions, corresponding to a saving of around 4.3 W per kW of load. At the system level, this leads to significant energy savings when scaled across server racks or entire data centers. For instance, scaling this across a hypothetical hyperscale data center with 2,000 racks would result in over 1.2 MWh in energy savings every hour – the equivalent energy needed to charge 25 small electric vehicles. The implications of this development are substantial, with cost savings and reduced carbon footprint for data center operators.

As the demand for AI computing continues to grow, the need for efficient power management solutions will increase. Infineon’s OptiMOS 6 80V is well-positioned to meet the growing energy-efficiency demand, offering a high-performance solution for AI server IBCs. Infineon’s OptiMOS 6 80V MOSFET in the 5×6 mm² DSC package offers optimized switching performance in hard switching topologies and high energy efficiency due to lower conduction losses. Additionally, the compact package enables cooling on both sides, which contributes to improved thermal management and higher power density – both crucial in AI server environments with limited space.

The OptiMOS 6 80V is part of Infineon’s broad portfolio of silicon power MOSFETs, designed to meet the growing demands for performance, efficiency, and integration in AI server applications. The portfolio leverages the latest MOSFET technology and offers various application-specific variants, optimized for different cooling concepts and system requirements. Infineon silicon power MOSFETs meet the highest quality and protection standards, enabling assured product reliability, dependable system uptime, and proven supply stability.

The post Infineon OptiMOS 6 80V MOSFET sets new benchmark in DC-DC power conversion efficiency in leading AI server platform appeared first on ELE Times.

Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has announced a range of highly efficient and robust automotive-qualified silicon carbide (SiC) MOSFETs with on-resistance (RDS(on)) values of 30mΩ, 40mΩ and 60mΩ...

ams OSRAM of Premstaetten, Austria and Munich, Germany is extending its portfolio of high-power lasers: the new cyan-colored laser diode is up to five times brighter than its predecessors...

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany is supplying its new G10-AsP metal-organic chemical vapor depositiion (MOCVD) system for high-volume production of GaAs/InP materials to longstanding customer SMART Photonics, enabling it to increase its capacity and capabilities...

Polar Light Technologies AB (PLT) has fabricated its first micro-display prototype built on its proprietary pyramidal micro-LED (µLED), confirming the technology’s ability to integrate the pyramidal micro-LED frontplane onto a CMOS backplane...

As a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs (combining what is claimed to be excellent performance with high robustness), Infineon Technologies AG of Munich, Germany says that its CoolSiC product line now spans from 400V to 3.3kV and covers a broad range of applications including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters. Building on a track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept...

To enable the next generation of solid-state power distribution systems, Infineon Technologies AG of Munich, Germany is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family...

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🔵🟡 ІІІ Всеукраїнська конференція з питань теоретичної і прикладної кібербезпеки TACS-2025 kpi вт, 05/06/2025 - 18:48