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Reddit:Electronics - 3 години 50 хв тому

Open to anything, including discussions, complaints, and rants.

Sub rules do not apply, so don't bother reporting incivility, off-topic, or spam.

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To see the newest posts, sort the comments by "new" (instead of "best" or "top").

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My all in one power supply for charging!

Reddit:Electronics - 6 годин 3 хв тому
My all in one power supply for charging!

I made this charger which has 3 outputs, upto 3A combined 2 USB A output 1 USB C output (iykyk) It also charges LiPo and Li-on batteries. I have massive batteries which burns out this tp4056 module, so I added it with this massive heatsink and the small one on top on the ic. It converts any DC input between 6-28V DC to 5V. I know I didn't add thermal paste cause I didn't have one. But it does the job, I tested it.

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Got this again after 20 years

Reddit:Electronics - 8 годин 43 хв тому
Got this again after 20 years

I once had the smaller 50 circuits version when I was a kid. And this was my gateway to developing a passion for electronics. Made some cool circuits back then some 20 years ago. But my mom threw it away:( So now I got a myself this bigger version. In your face mom! I feel like a kid again. Ideas for circuits outside the book are welcome!

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Another simple flip ON flop OFF circuit

EDN Network - Птн, 04/25/2025 - 19:38

Editor’s Note: This Design Idea (DI) offers another alternative to the “To press ON or hold OFF? This does both for AC voltages” that was originally inspired by Nick Cornford’s DI: “To press ON or hold OFF? This does both.”

Figure 1 gives a simple circuit for the PUSH ON, PUSH OFF function with only a few inexpensive components. In this design, the output is connected to the input of the gadget when you press the push button (PB) once. For the next push, the output is disconnected.

Wow the engineering world with your unique design: Design Ideas Submission Guide

This is an attractive alternative to bulkier ON/OFF switches for DC circuits. The circuit has a fairly simple explanation. U1 is a counter.

Figure 1 A Flip ON Flop OFF circuit for DC voltages. The gadget is connected to the output terminals of the PB. With an adequate heat sink for MOSFET Q1, the output current can go up to 50 A.

During power on, R2/C2 resets the counter to zero. When you push PB momentarily once, a pulse is generated and shaped by a Schmidt trigger inverter U2 (A & C), which counter U1 counts. Hence, the LSB (Q1) output of U1 becomes HIGH, making MOSFET Q1 conduct. At this point, the output gets the input DC voltage.

When you push PB momentarily again, another pulse is generated and counted by U1. Hence, its LSB (Q1) output goes LOW and MOSFET Q1 stops conducting and output is disconnected from input. This action continues, making output ON and OFF for each push of PB.

Jayapal Ramalingam has over three decades of experience in designing electronics systems for power & process industries and is presently a freelance automation consultant.

Related Content

The post Another simple flip ON flop OFF circuit appeared first on EDN.

Navitas strengthens corporate governance

Semiconductor today - Птн, 04/25/2025 - 16:06
To advance its growth strategy, gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced corporate governance enhancements that are said to reflect the board of directors’ ongoing commitment to stockholder engagement and value creation for stakeholders...

FPGA prototyping harnessed for RISC-V processor cores

EDN Network - Птн, 04/25/2025 - 13:54

FPGA-based prototyping solutions provider S2C has teamed up with RISC-V processor IP supplier Andes Technology to enhance prototyping capabilities for system-on-chip (SoC) designs. This collaboration aims to bolster capacity and flexibility for modeling, prototyping, and software development work carried out around Andes’ RISC-V cores.

The partnership is built around S2C’s recently launched Prodigy S8-100 FPGA prototyping platform, which is based on AMD’s Versal Premium VP1902 adaptive SoC. “Versal Premium VP1902 adaptive SoC is the industry’s largest FPGA-based adaptive SoC,” said Mike Rather, senior product line manager at AMD. “That empowers engineers to push the boundaries of technology.”

Figure 1 The VP1902 adaptive SoC bolsters prototyping platform’s capacity with a larger FPGA. Source: AMD

Capacity limitations are a common challenge in FPGA prototyping, which restricts SoC developers’ ability to integrate multiple RISC-V cores along with subsystems like network-on-chip (NoC), DDR, PCIe controllers, and more. Prodigy S8-100 prototyping addresses these challenges by offering a single FPGA version with up to 100 million logic gates.

“The large-capacity FPGA-based prototyping allows early customizations, ultimately accelerating their time-to-market with Andes-based RISC-V SoCs,” said Emerson Hsiao, president of Andes Technology USA.

Figure 2 The new FPGA prototyping platform further boosts capacity with larger configurations. Source: S2C

As shown in the above figure, Prodigy S8-100 also includes larger configurations with two or even four VP1902 adaptive SoCs, which scales capacity to up to 400 million logic gates per system. That enables full SoC validation in hardware, significantly reducing development cycles, optimizing performance modeling, and accelerating software development before production silicon becomes available.

Next, the new prototyping platform encompasses S2C’s extensive library of nearly 100 daughter cards, which support applications ranging from networking, storage, and multimedia to generic IOs. This facilitates efficient interface modeling and simulation without sacrificing FPGA logic resources.

S2C’s new FPGA prototyping platform will be demonstrated live at the Andes RISC-V Con, which will be held on April 29, 2025, at the DoubleTree by Hilton Hotel in San Jose, California.

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Стипендії від компанії "ІКНЕТ" для студентів ФЕА

Новини - Птн, 04/25/2025 - 10:00
Стипендії від компанії "ІКНЕТ" для студентів ФЕА
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Інформація КП пт, 04/25/2025 - 10:00
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Для підготовки затребуваних на ринку праці кваліфікованих фахівців Київська політехніка тісно співпрацює з численними вітчизняними й міжнародними компаніями, які зацікавлені в молодих спеціалістах, здатних працювати на новітньому обладнанні: обслуговувати, вдосконалювати його, сприяти розвитку компанії та розбудовувати відповідні галузі промисловості.

SiC modules boost thermal stability

EDN Network - Птн, 04/25/2025 - 03:32

SiCPAK power modules from Navitas use advanced epoxy-resin potting to achieve 5× lower thermal resistance shift for extended system lifetime. Based on trench-assisted planar SiC MOSFETs, the modules deliver efficient high-temperature performance for EV DC fast chargers, solar inverters, industrial motor drives, energy storage systems, and uninterruptible power supplies.

The 1200-V SiCPAKs are designed to resist high humidity and prevent moisture ingress, maintaining stable thermal performance under power and temperature cycling. In thermal shock testing (–40°C to +125°C, 1000 cycles), the modules showed a 5× smaller increase in thermal resistance compared to those with silicone-gel potting. Additionally, while silicone-gel modules failed isolation tests, the epoxy-resin potted SiCPAKs retained acceptable isolation levels.

Featuring built-in NTC thermistors, the 1200-V power modules are offered with on-resistance ratings from 4.6 mΩ to 18.5 mΩ in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They also maintain pin compatibility with industry-standard press-fit modules.

The 1200-V SiCPAK modules are now available for mass production. Datasheets can be found here.

Navitas Semiconductor 

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📰 Газета "Київський політехнік" № 17-18 за 2025 (.pdf)

Новини - Чтв, 04/24/2025 - 22:00
📰 Газета "Київський політехнік" № 17-18 за 2025 (.pdf)
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Інформація КП чт, 04/24/2025 - 22:00
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Вийшов 17-18 номер газети "Київський політехнік" за 2025 рік

Infineon advances EV drivetrain efficiency

EDN Network - Чтв, 04/24/2025 - 21:36

To support the rapid growth of electric vehicles, Infineon has introduced a new generation of energy-efficient silicon IGBTs and reverse-conducting IGBTs (RC-IGBTs). The 3rd generation Electric Drive Train (EDT3) IGBTs target both 400-V and 800-V systems, while the RC-IGBTs are optimized for 800-V architectures. These devices boost drivetrain efficiency and are well-suited for automotive applications.

EDT3 chipsets support collector-emitter voltages of up to 750 V and 1200 V, with a maximum virtual junction temperature of +185°C. They offer high output current, making them useful for main inverters in battery-electric, plug-in hybrid, and range-extended EVs. Their compact, optimized design enables smaller modules, helping automakers build more efficient and reliable powertrains that can extend driving range and lower emissions.

The 1200-V RC-IGBT enhances performance by integrating IGBT and diode functions on a single die, achieving higher current density than discrete chipset solutions. This integration reduces assembly effort and chip size, offering a scalable, cost-effective option for powertrain systems.

All of the devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering, and bonding are available on request.

The EDT3 and RC-IGBT devices are now sampling. For more information, click here.

Infineon Technologies 

The post Infineon advances EV drivetrain efficiency appeared first on EDN.

MCUs cut power to 0.25 µA in standby

EDN Network - Чтв, 04/24/2025 - 21:36

Powered by a 32-MHz Arm Cortex-M23 processor, the Renesas RAOE2 group of entry-level MCUs offers low power consumption and an extended temperature range. The devices have a feature set that is optimized for cost-sensitive applications such as battery-operated consumer electronics, small appliances, industrial control systems, and building automation.

RAOE2 MCUs consume 2.8 mA in active mode and 0.89 mA in sleep mode. An integrated high-speed on-chip oscillator supports fast wakeup, allowing the device to remain in software standby mode longer—where power consumption drops to just 0.25 µA. With ±1.0% precision, the oscillator also improves baud rate accuracy and maintains stability across a temperature range of -40°C to +125°C.

The MCUs operate from 1.6 V to 5.5 V, eliminating the need for a level shifter or regulator in 5-V systems. They offer up to 128 KB of code flash and 16 KB of SRAM, along with integrated timers, serial communication interfaces, analog functions, and safety features. Security functions include a unique ID, true random number generator (TRNG), AES libraries, and flash read protection.

RAOE2 MCUs are available now in a variety of packages, including a 5×5-mm, 32-lead QFN.

RAOE2 product page

Renesas Electronics 

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PMICs optimize energy harvesting designs

EDN Network - Чтв, 04/24/2025 - 21:36

Low-current PMICs in AKM’s AP4413 series enable efficient battery charging in devices that typically use disposable batteries, including remote controls, IoT sensors, and Bluetooth trackers. With current consumption as low as 52 nA, they have minimal impact on a system’s power budget—critical for energy harvesting applications.

The series comprises four variants with voltage thresholds tailored to common rechargeable battery types. Each device integrates voltage monitoring to prevent deep discharge, enabling quick startup or recovery. An inline capacitor allows the AP4413 to maintain operation even when the battery is fully discharged, while recharging it simultaneously.

System configuration example.

The AP4413 PMICs are in mass production and come in 3.0×3.0×0.37-mm HXQFN packages.

AP4413 product page

Asahi Kasei Microdevices 

The post PMICs optimize energy harvesting designs appeared first on EDN.

Cadence debuts DDR5 MRDIMM IP at 12.8 Gbps

EDN Network - Чтв, 04/24/2025 - 21:36

Cadence has announced the first DDR5 12.8-Gbps MRDIMM Gen2 memory IP subsystem, featuring a PHY and controller fabricated on TSMC’s N3 (3-nm) process. The design was hardware-validated with Gen2 MRDIMMs populated with DDR5 6400-Mbps DRAM chips, achieving a 12.8-Gbps data rate—doubling the bandwidth of the DRAM devices. The solution addresses growing memory bandwidth demands driven by AI workloads in enterprise and cloud data center applications.

Based on a silicon-proven architecture, the DDR5 IP subsystem provides ultra-low latency encryption and advanced RAS features. It is designed to enable the next-generation of SoCs and chiplets, offering flexible integration options, as well as precise tuning of power and performance.

Combined with Micron’s 1γ-based DRAM and Montage Technology’s memory buffers, Cadence’s DDR5 MRDIMM IP delivers a high-performance memory subsystem with doubled bandwidth. The PHY and controller have been validated using Cadence’s DDR Verification IP (VIP), enabling rapid IP and SoC verification closure. Cadence reports multiple ongoing engagements with leading customers in AI, HPC, and data center markets.

For more information, visit the DDR5 MRDIMM PHY and controller page.

Cadence

The post Cadence debuts DDR5 MRDIMM IP at 12.8 Gbps appeared first on EDN.

Northeast Microelectronics Coalition awards $1.43m to 19 firms through PROPEL Operations Program

Semiconductor today - Чтв, 04/24/2025 - 20:22
The Northeast Microelectronics Coalition (NEMC) Hub has announced $1,432,373 in awards to 19 startups and small businesses through its Powering Regional Opportunities for Prototyping Microelectronics (PROPEL) Operations Program, which helps companies to reach commercial readiness by reducing day-to-day costs that include software licensing, employee training, securing patents and cybersecurity services, hence accelerating the transition of technologies from laboratories to fabrication facilities and preparing for new commercial investments...

Інфраструктура для енергетичної стійкості та цифрової освіти

Новини - Чтв, 04/24/2025 - 19:26
Інфраструктура для енергетичної стійкості та цифрової освіти
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kpi чт, 04/24/2025 - 19:26
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Сьогодні на Факультеті електроенерготехніки та автоматики відбулася презентація нових інфраструктурних рішень, що посилюють енергетичну автономність та цифрові можливості університету.

На війні загинув випускник ІАТ Антон Забродський

Новини - Чтв, 04/24/2025 - 19:15
На війні загинув випускник ІАТ Антон Забродський
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kpi чт, 04/24/2025 - 19:15
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Із сумом повідомляємо, що продовжує надходити інформація щодо КПІшників, які загинули на війні.

Забродський Антон Віталійович (31.08.1997 – 16.11.2022) - випускник Навчально-наукового інституту аерокосмічних технологій (НН ІАТ).

Quantum-safe root-of-trust solution to secure ASICs, FPGAs

EDN Network - Чтв, 04/24/2025 - 18:21

A new quantum-safe root-of-trust solution enables ASICs and FPGAs to comply with post-quantum cryptography (PQC) standards set out in regulations like the NSA’s CNSA 2.0. PQPlatform-TrustSys, built around the PQC-first design philosophy, aims to help manufacturers comply with cybersecurity regulations with minimal integration time and effort.

It facilitates robust key management by tracking the key’s origin and permission, including key revocation, an essential and often overlooked part of securing any large-scale cryptographic deployment. Moreover, root-of-trust enforces restrictions on critical operations and maintains security even if the host system is compromised.

Next, key origin and permission attributes are extended to cryptographic accelerators connected to a private peripheral bus. PQPlatform-TrustSys, launched by London, UK-based PQShield, has been unveiled after the company achieved FIPS 140-3 certification through the Cryptographic Module Verification Program (CMVP), which is designed to evaluate cryptographic modules and provide agencies and organizations with a metric for security products.

PQShield, a supplier of PQC solutions, has also built its own silicon test chip to prove this can all be delivered ‘first time right’. Its PQC solutions are developed around three pillars: ultra-fast, ultra-secure, and ultra-small.

PQShield’s security products are built around three basic tenets: ultra-fast, ultra-secure, and ultra-small.

The PKfail vulnerability has thrust multiple security issues within the secure boot and secure update domains, which play a fundamental role in protection against malware. Inevitably, ASICs and FPGAs will need to ensure secure boot and secure update while meeting both existing and new regulatory requirements with clear timelines set out by NIST.

Industry watchers believe that we have a five-to-10-year window to migrate to the PQC world. So, the availability of a quantum-safe root-of-trust solution bodes well for preparing ASICs and FPGAs to function securely in the quantum era.

Related Content

The post Quantum-safe root-of-trust solution to secure ASICs, FPGAs appeared first on EDN.

ROHM adds high-power-density 4-in-1 and 6-in-1 SiC power modules in HSDIP20 package

Semiconductor today - Чтв, 04/24/2025 - 18:10
ROHM has announced the availability of OEM quantities of new 4-in-1 and 6-in-1 silicon carbide (SiC) molded modules in the HSDIP20 package optimized for PFC(power factor correction) and LLC (inductor-inductor-capacitor) converters in on-board chargers (OBC) for xEV electric vehicles. The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications...

ROHM adds high-power-density 4-in-1 and 6-in-1 SiC power modules in HSDIP20 package

Semiconductor today - Чтв, 04/24/2025 - 18:10
ROHM has announced the availability of OEM quantities of new 4-in-1 and 6-in-1 silicon carbide (SiC) molded modules in the HSDIP20 package optimized for PFC(power factor correction) and LLC (inductor-inductor-capacitor) converters in on-board chargers (OBC) for xEV electric vehicles. The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications...

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