Збирач потоків

Обговорення перспективних напрямів співпраці між КПІ та американськими партнерами kpi чт, 06/11/2026 - 12:50

Vishay Intertechnology, Inc. announces an expansion of its ILHB series of Automotive Grade multilayer chip ferrite beads for high current filtering. The Vishay Dale devices now offer higher current capability, smaller case sizes, and a wider range of impedance values to meet a broader set of EMC noise reduction requirements.

The ILHB series is now available in 0402, 0603, 0805, 1008, and 1206 case sizes with current handling up to 6 A and impedance values from 10 Ω to 2700 Ω. The expanded lineup allows designers to achieve higher current handling in smaller packages, while delivering two to three times the current capability for the same package size and impedance value.

The immense range of sizes, current handling, and impedance values allows the ILHB ferrite beads to be used in a wider array of EMC noise reduction applications. These include high current, high frequency, and signal-specific filtering in automotive energy distribution and management systems; industrial automation systems; home and building controls; computers and computer peripherals; consumer devices; white goods; medical instrumentation; avionics; and telecom infrastructure.

The ILHB product datasheets optimize with additional design parameters that help engineers estimate bead performance across more frequencies without consulting multiple performance graphs to simplify device selection. These parameters include impedance peak value and frequency, the frequency at which impedance drops below the nominal value, and the X- and R-frequency crossover point.

The AEC-Q200 qualified devices feature a silver (Ag) inner conductor with copper (Cu), nickel (Ni), and tin (Sn) plating. The ferrite beads operate over a temperature range from -55 °C to +125 °C and are RoHS-compliant, halogen-free, and Vishay Green.

Device Specification Table:

Part number	IHLB-0402	IHLB-0603	IHLB-0805	IHLB-1008	IHLB-1206
Case size	0402	0603	0805	1008	1206
Dimensions (mm)	1.0 x 0.5 x 0.5	1.6 x 0.8 x 0.8	2.0 x 1.2 x 0.85	2.5 x 2.0	3.2 x 1.6
Z at 100 MHz (W)	10 to 1800	22 to 2500	17 to 2700	300 to 600	19 to 1000
DCR max. (mW)	18 to 2400	7 to 1800	10 to 800	30	10 to 300
Rated DC current at 85 °C (1) (A)	0.05 to 3.1	0.05 to 6	0.2 to 6	4	0.5 to 6
Zpk (2) (W)	19 to 3738	28 to 2526	21.6 to 31 868	554 to 670	32.68 to 1167
F at Zpk (3) (MHz)	97 to 1329	78 to 1000	72 to 1132	122 to 155	61 to 2921
Z typ. at 100 MHz (W)	10 to 2038	22 to 2200	17 to 2713	309 to 517	17.2 to 1000
F at ZDO (4) (MHz)	125 to > 10 000	100 to 8000	84 to 8000	138 to 222	100 to > 10 000
XL / XR x over (5) (MHz)	31 to 710	26 to 439	23 to 298	100 to 117	25 to 120

 

• Rated current is the DC that causes a 40 °C temperature rise at 20 °C ambient
• Zpk = peak of impedance curve
• F at Zpk = frequency of Zpk
• F at ZDO = frequency above 100 MHz where Z drops to nominal Z
• XL / XR x over = crossover point for inductive reactance and resistance impedance

The post Vishay Extends ILHB Ferrite Beads for Wider Automotive EMC Support appeared first on ELE Times.

Qorvo introduces an X-band radar front-end solution that enables defense system designers to achieve higher performance without increasing size, weight, or prime power. The design targets modern phase array and multifunction sensors. The solution combines transmit power, efficiency, and receive sensitivity in a single compact module, addressing key challenges in next-generation radar design.

 

The Qorvo QPF5012 is a fully integrated X-band transmit/receive front-end module operating from 8.5 to 10.5 GHz, delivering 10W of transmit power.  With 42 percent power-added efficiency and 2.1 dB noise figure in a 7 x 5 mm package, the QPF5012 enables designers to extend radar range, reduce thermal load, and improve detection sensitivity without increasing system complexity. 

“Radar designers have historically been forced to trade off output power, prime power, or sensitivity,” said Doug Bostrom, general manager of Qorvo’s Defense and Aerospace business. “With the QPF5012, Qorvo brings all three together in a compact integrated front-end module, helping customers simplify design, reduce thermal constraints, and improve real-world radar performance.”

 

QPF5012 is specifically built for X-band phased array radar applications where size, weight, and power (SWaP) and thermal performance are critical. Its high level of integration reduces component count and simplifies system design while maintaining constant efficiency and RF output power across changing antenna loads. This enables AESA systems to deliver more consistent RF performance across varying scan angles. Qorvo enables this integration through vertically integrated RF design expertise, advanced multi-technology packaging, and trusted manufacturing capabilities.

Key Features of QPF5012:  

• 10W saturated transmit power across 8.5 to 10.5 GHz  
• 42% power-added efficiency to reduce prime power consumption and thermal load  
• 2.1 dB noise figure to improve receive sensitivity and detection accuracy  
• Integrated T/R functionality in a compact 7 x 5 mm module to reduce SWaP and design complexity. 

 

By delivering power, efficiency, and sensitivity together in a single integrated module, Qorvo enables defense radar designers to overcome traditional design constraints and achieve higher system-level performance in a compact front-end architecture.

The post Qorvo’s New Compact Front-End Redefines X-Band Radar Performance appeared first on ELE Times.

US-based aerospace & defense technology company Northrop Grumman Corp has fabricated a new gallium nitride (GaN) chip that sets what is claimed to be a new performance standard for military and commercial use...

There’s considerable interest in leveraging the bandwidth and other potential virtues of terahertz waves that occupy the spectrum between the conventional RF and optical worlds, generally considered to span 100 GHz (3 mm wavelength) to 10 THz (30 μm). However, managing electromagnetic energy at these wavelengths presents many challenges, as they are too short for most electronics, yet too long for all-optical components.

Nonetheless, there’s a significant amount of ongoing research in developing the materials and components needed, especially with many potential applications, including the emerging 6G standards being developed now.

At these frequencies and corresponding wavelengths, signal energy must be conveyed via waveguides—discrete wires won’t do, of course. But making the needed waveguide physical transitions is difficult when they are fabricated in silicon as part of a larger set of on-chip functions.

Addressing this issue, a team of researchers at The Skolkovo Institute of Science and Technology—or Skoltech, a private institute in Moscow—working with a team from KTH Royal Institute of Technology in Sweden, has developed a key technology that could support silicon-based terahertz waveguides and their on-chip transitions.

Their solution is based on carbon nanotubes, one of those amazing materials that keeps offering solutions to diverse problems. The single-wall carbon nanotube (SWCNT) was discovered in 1991 (see “A Brief Introduction of Carbon Nanotubes: History, Synthesis, and Properties“). Like fullerene and graphene, SWCNTs are one of the allotropes of carbon.

Allotropes present a different structural form of the same chemical element within the same physical state; because their atoms are bonded differently, allotropes have vastly different physical and chemical properties from each other—think diamond versus graphite.

A key challenge in building these complex terahertz arrangements is devising properly matched terminations. Without proper termination, reflections at device discontinuities can cascade, thus degrading performance and altering the intended operational profile. In addition, these terminations are necessary for characterization of multi-port devices such as directional couplers, where the unused ports must be terminated with matched loads.

The conventional solution is to use adiabatic or impedance-matched tapering of the waveguide cross-section to free space, gradually expanding the guided mode to induce radiation losses while operating as a dielectric rod antenna. However, the efficiency of these structures depends on the length of the tapering, therefore consuming valuable chip area; it can also radiate power in undesirable directions, thus complicating packaging, limiting integration density, and creating electromagnetic pollution.

Note that in the adiabatic-coupling approach, the optical mode is coupled from one waveguide to another by a slow change of a waveguide parameter (width, thickness, or both) such that the optical mode remains in the fundamental mode and does not couple to unwanted higher-order modes. As a result, the tapered waveguides need to be long enough to meet the requirements of the adiabatic conditions of slow change of waveguide parameter. However, at the same time, they need to meet the device compactness requirement. Therefore, there is a trade-off to be made

The research team devised and tested a carbon nanotube-based coating that blocks electromagnetic radiation, thereby creating waveguides compatible with terahertz wavelengths. The ultrathin single-walled carbon nanotube films that they synthesized are similar to those that they used previously to create small-scale components, such as lenses and antennas, but with a big difference, as this time it’s not for standalone components. Instead, they leveraged carbon-based material to control electromagnetic radiation in 2D-integrated optical circuits, eliminate interference, and enable additional functionality.

They demonstrated a compact, broadband termination by coating silicon dielectric rod waveguides (DRW) with ultrathin single-walled carbon nanotube films. Fabricated via a floating-catalyst (aerosol) chemical vapor-deposition process, the film thickness varies from 2 to 53 nm and was characterized in the 140-220 GHz range. A 53-nm thick film introduced up to 47 dB of attenuation while maintaining over 20 dB reflection loss, confirming nearly reflection-free absorption (Figure 1).

Figure 1 Reflection measurements of the SWCNT-loaded DRWs show ∣S11∣ for the 6-mm long samples (a) and ∣S11∣ for the 12-mm long samples (b). The light grey line is baseline reflection after calibration by measuring a thru-standard (flanges of the frequency extenders connected); dark grey is the reflection coefficient of an unloaded DRW. Source: Nature Communications

Shielding analysis shows absorption dominates over reflection, and they achieved a record specific shielding efficiency of 5.5 × 109 dB cm2/g (Figure 2).

Figure 2 Shielding efficiency components for the SWCNT-coated dielectric waveguides: reflection component SER (a, b), absorption component SEA. (c, d), and total shielding SET (e, f) for 6-mm (left column) and 12-mm (right column) samples over 140-220 GHz, with light grey as the equivalent shielding efficiency of an unloaded silicon waveguide provided for reference. Source: Nature Communications

This approach offers a footprint-efficient solution for high-density terahertz circuits without bulky, radiative terminations. The work is presented in their paper “Ultrathin Single-Walled Carbon Nanotube Surface Wave Absorbers for Terahertz Dielectric Waveguides” published in Nature Communications. It’s unfortunate that the paper does not have any microphotographs of the SWCNT waveguide and transitions in silicon, so you’ll just have to visualize those yourself.

Have you had any interaction with or uses for carbon nanotubes? If so, in what way? Do you see a role for them in any of your projects, whether terahertz or other?

Bill Schweber is a degreed senior EE who has written three textbooks, hundreds of technical articles, opinion columns, and product features. Prior to becoming an author and editor, he spent his entire hands-on career on the analog side by working on power supplies, sensors, signal conditioning, and wired and wireless communication links. His work experience includes many years at Analog Devices in applications and marketing.

Related Content

• Nanotube sensors spark new use cases
• Carbon nanotubes boost image sensor sensitivity
• Metadevices may fill the terahertz component gap
• Optical combs yield extreme-accuracy gigahertz RF oscillator

The post Carbon nanotube coating creates on-chip terahertz waveguides appeared first on EDN.