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Hi all, not sure if this post fits, but I really wanted to share my first real project. For my 3rd Year in Electronic Engineering at the University of Pretoria we were tasked with building a line following robot from scratch. For this assignment we worked in a group of 2 people. The exact task was: Build a line following robot using the PIC18f45k22 as your uC. Program it fully in PIC-assembler. Build all relevant sensors (Touch and Colour) from scratch. Design your own PCB. The robot (MARV) needs to be able to detect any of the 4 (Green, Red, Blue, Black) colours and follow them. This large task was broken into smaller sub-practicals that had to be completed throughout the semester (While doing other subjects). I'll break down the project into these smaller components to explain what I did a bit better, this is also where I add that English is not my first language so please excuse that. Practical 1: Colour sensing. For the first practical we had to design a colour sensor from scratch. We ended up going with a reversed biased Photo-diode (SFH-213) over a resistor into a standard non-inverting negative feedback amplifier using a MCP6001 as our op-amp. We designed a 3d printed housing to hold 5 of these in a row. Then we used a RGB-LED that illuminates the surface of which the colour is being measured. The PIC controlled the LED's by strobing the colours while taking measurements of the sensor with the ADC. The colours were shined one after another and different values were taken to determine what colour is what while moving the sensor over a calibration strip. There is a lot more that was done but this is a good enough summary. Practical 2: Motor control, navigation and integration. For this practical the sensors had to be integrated with a line following algorithm as well as motor control. After a calibration sequence the PIC would wait for you to select a colour which it should follow, after this it sits in a waiting state until the basic capacitive touch sensor is pressed, where-after it starts moving by sending PWM signals to a motor controller based on the L298M. This stage also had us designing a PCB for the first time, figuring out how linear voltage regulators, decoupling capacitors and many more things worked. This stage is the lunch box on wheels, this is also where our robot got her name, Jessica. Once again this is just a quick summary. Practical 3: UART, I2C and polish for raceday! For this practical an EEPROM (24LC16B) had to be communicated with over I2C to store calibration data. A serial to UART chip (MCP2221A) needed to be utilised to talk to the PIC over USB. This is the stage where Jessica gained her sleek 3d printed chassis and her PCB arrived. I've glossed over all the technical things of the code to try and keep this short-ish. This is also where the coolest part of the project happens. Race-day, All other groups compete in a head to head race, where the fastest robot wins big prizes for there teams. This evens is sponsored by big companies such as RS, Wurth, Hensold and many more. In race day my team finished 2nd, and we won a cash prize, unfortunately not the grand prize of a 3d printer with other goodies, but at the end of the day I'm still chuffed with the result. Feel free to ask any questions, I wanted to add more but this is just a reddit post after all. If someone wants a more in-depth look at our code just let me know and I'll share a github link. If your interested in seeing the race in action also let me know and I'll link the live stream of the race. submitted by /u/THEsuit33 [link] [comments]

Global aerospace propulsion, services and systems firm GE Aerospace of Evendale, OH, USA and Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — have entered into a memorandum of understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide across the industrial, aerospace and defense markets...

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silicon carbide (SiC) MOSFETs and gate drivers based on their specific requirements. The interactive tool makes it easier to evaluate pairing behavior and trade-offs, helping to accelerate the development of power electronics designs. It also serves as the front door to onsemi’s broader simulation toolset for system-level performance and efficiency analysis...

КПІ ім. Ігоря Сікорського прийняв Національний форум з відкритої науки KPI4U-1 пн, 06/08/2026 - 18:00

Infineon Technologies AG and Siemens AG of Munich, Germany are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor (solid-state) circuit breakers. This will enhance the efficiency, power density and reliability of Siemens’ protection solution...

At the PCIM Europe 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 June), Fraunhofer Institute for Applied Solid State Physics IAF is presenting the latest developments in gallium nitride (GaN) power electronics...

Менеджмент на підприємствах ОПК: зміни на часі. Які саме? Інформація КП пн, 06/08/2026 - 15:02

Connectivity is all well and good…well, sort of, as it invariably comes with a price, literally and/or figuratively. Simple’s sometimes best, all things considered, and ambient-light power’s also nice.

When you want to monitor and adjust the internal humidity (and temperature, while you’re at it) of your residence or other facility, a “smart” connected hygrometer such as the one I tore down last month is convenient, since you can check both the measurements-of-the-moment and longer-term legacy trends from anywhere (even when you’re away) using your mobile device. A “smart” hygrometer can even alert you when those measurements stray beyond predefined boundary conditions. And if it includes a built-in display, you can keep your smartphone stowed away and still see the data.

All that connectivity and integrated intelligence comes with a bill-of-materials cost adder, however. And there’s always also the latent (or not) potential for hackers to gain access to that same data stream. While you might not care if someone halfway around the world (or down the street, for that matter) knows your home’s humidity and temperature, you’ll undoubtedly care a lot more if that same “smart” hygrometer ends up being a penetration “vector” for a broader attack, revealing your location and Wi-Fi network login details, for example, along with providing strangers with access to more privacy-violating LAN devices such as security cameras.

Acceptable = respectable

As such, a non-connected sensor is a credible (and sometimes the preferable) alternative. At the beginning of April, I saw a two-pack of BaldrTherm 2.2” solar-powered digital thermometer and hygrometers marked down to $9.99 at Amazon and, curious to try out (and tear down) such a device myself, pressed “purchase”.

I’ve subsequently seen the same two-pack listed there for as low as $8.99, exemplifying a broader BaldrTherm promotion that I’m guessing is motivated by a product line transition combo of redesign and migration to larger, more visible data-rich, 3.2” display devices:

with in-progress awkward consequences:

And to be clear, the company offers plenty of “connected” product variants, too. But today we’ll dive inside a fully standalone-operation offering, complete with a solar cell power option that’s more broadly photon-source agnostic (albeit presumably still visible light spectrum-centric).

Since I know how much you all love conceptual teardown “stock” images, I’ll start with one of ‘em:

And now for our actual patient, as usual beginning with some outer box shots, also as-usual accompanied by a 0.75″ (19.1 mm) diameter U.S. penny for size comparison purposes:

Flip open either of the latter two flaps:

and inside you’ll find two slips o’literature (the “user manual”, such as it scantly is, can be accessed in PDF form here):

and two sleeve-swathed examples of today’s teardown victim:

Diminutive in size and price

Here’s the now-“naked” device from various perspectives. Note the transparent piece of plastic (which BaldrTherm refers to as an “insulation sheet”) sticking out one side, which keeps the battery inside from prematurely draining while sitting on store shelves pre-purchase, until removed by the buyer-now-owner (and whose very presence was initially confusing to me, as I’d assumed the energy storage cell in the interior was solar-rechargeable; keep reading).

In spite of the battery still being disconnected, and after a brief delay after initial exposure to my home office’s overhead lighting:

the display came on and the device started working:

I was initially surprised by this unexpected functional transition, until I pondered and realized the underlying reason why, which the user manual also spells out:

Time to get inside. You may have already noticed in one of the earlier overview shots the two coin edge-inviting slots (one of them doing double-duty for the “insulating sheet”) on one side.

Had I thought to grab the penny I had handy, they might have sufficed. As it was, the flexible tip of the “spunger” I was trying to use made it ineffective, so much so that I peeled off the backside sticker to see if I could find any screw heads underneath it. Nope:

Switching to a flat-head screwdriver eventually accomplished my objective, however:

Hot and (not) heavy

Here’s where things started getting interesting and, in retrospect, amusing. I happened to notice that, presumably during the initial disassembly process, the spring terminal at the anode (“negative”) end of the AAA battery inside had become dislodged.

Normally, such batteries’ cases have a thin plastic outer insulating layer that prevents short-circuits with the cathode directly below it:

Not in this case (bad pun intended), however, or maybe it got scratched during disassembly, too. Because when I grabbed the sides of the battery to remove it, my fingertips got scorched. I quickly grabbed the aforementioned flat-head screwdriver and flipped the battery out of the chassis that way instead.

While I waited for it to cool, I carefully rolled it around and learned that it was a non-rechargeable conventional alkaline cell, instead.

In retrospect, including not only a rechargeable battery but also the necessary recharging circuitry in the design would have ballooned the bill-of-materials cost, and I later noticed that the documentation made it clear that the battery was not to be replaced, apparently if for no other reason than to preclude owner burns and other potential mishaps.

If so, though, then why the tempting coin-shaped slots on one side? Inquiring minds want to know. Surprisingly, the cell still held a meaningful modicum of charge; I’d apparently been sufficiently speedy in noticing and rectifying the short-circuit circumstances:

And the device still worked, both with the battery removed:

and with it temporarily reinstalled once safe to touch again.

Internal details

Onward. The solar cell is tenuously held in place with a single piece of tape on one side and the case sides on the other.

The PCB to which it’s attached is conversely more firmly ensconced by two screws.

You know what comes next:

We have a liftoff:

Now for the other, more circuitry-meaningful front side:

Flipping the LCD over reveals its elastomeric connector on one end, which normally presses up against electrical contacts on the PCB itself:

This is one rugged little device; pressing the two halves back together with my fingers and exposing the solar cell to light reignites the display and broader sensing-and-reporting capabilities (albeit with the measured temperature presumably inflated by my body proximity).

Here’s a closeup of the PCB frontside:

showing the elastomer-mating contacts at bottom, a piece of insulating tape at upper left and normally between the LCD backside and a 220-µF capacitor first glimpsed in the assembly rear-view images I shared earlier:

and at upper right, and left-to-right, the humidity and temperature sensors. Underneath the identification-blocking black epoxy blob in the center is presumably the SoC.

Capacitor and missing-battery buffers

In closing, after putting everything back together, the device still worked, after a brief wakeup delay and initially for only a short and cyclical timeframe.

After which, functionality eventually stabilized as long as sufficient light remained available.

Specifically, I’m guessing, commensurate with the fact that there’s still no battery (re)installed. What’s the relationship here? It has to do, I think, with the core purpose of that previously noted capacitor. Remember my “backup batteries and supercaps” piece from last month? This is effectively the supercapacitor, intended to smooth out transient ambient illumination variability-induced impermanence in the solar cell’s output.

I’m guessing that the capacitor is taking a few system-reboot cycles to get to full stored charge capacity, particularly given that there’s (abnormally, versus the normal configuration) no battery installed to alternatively supply the system with the necessary electrons. Agree or disagree, readers? As always, please let me know your thoughts on this and/or anything else that caught your fancy in the comments!

—Brian Dipert is the associate editor, as well as a contributing editor, at EDN.

Related Content

• Humidifiers and such: How much “smart” is too much?
• Smart hygrometers: Still largely useful even without integrated visual monitors
• The Tapo Hub: TP-Link joins the low-bandwidth, long-range RF club
• TP-Link’s Tapo H100: Smart sensing unencumbered
• IoT device vulnerabilities are on the rise
• Backup batteries and supercaps: Geriatric hardware traps

The post Not smart, but solar: Analyzing another thermo-plus-hygrometer appeared first on EDN.

Semiconductor circuit breakers are fast-acting, semiconductor-based electronic devices that protect electrical circuits and components from damage caused by short circuits or overloads. Infineon’s silicon carbide power modules enhance the efficiency, power density, and reliability of the Siemens circuit breaker

Infineon Technologies AG and Siemens AG are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities, and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers. This will enhance the efficiency, power density, and reliability of Siemens’ protection solution.

“AI data centers and factories are becoming increasingly electrified and complex. This increases vulnerability to electrical failures and drives the demand for more sustainable, efficient, and reliable power distribution systems,” said Andreas Weisl, Executive Vice President & Chief Sales Officer of Industrial and Infrastructure at Infineon. “By combining our advanced silicon carbide technology with Siemens’ expertise in power distribution, we are addressing this demand to ensure fast, safe, and reliable operations in power-critical environments.”

A semiconductor circuit breaker, also known as a solid-state circuit breaker, is an electronic device that protects electrical circuits from damage by excessive current flow, such as short circuits or overloads. Unlike traditional electromechanical circuit breakers, which rely on mechanical parts to interrupt the flow of current and typically operate on the millisecond scale, the Siemens SENTRON 3QD2 uses semiconductor components and smart protection algorithms to perform this function. This enables ultra-fast interruption in the microsecond range, up to 1,000 times faster than conventional systems. This capability is essential for direct current (DC) grids and offers a significant increase in protection and system availability, which is crucial in applications like industrial manufacturing and AI data centers, where even a slight delay can cause costly downtime, data loss, or expensive hardware damage in the event of electrical failures.

“Our new direct current portfolio offers innovative solutions that not only improve energy efficiency but also enable the development of resilient, future-proof infrastructure,” said Markus Grabmeier, CEO of Electrical Products at Siemens Smart Infrastructure. “Direct current applications can decrease energy consumption and substantially cut material usage. By integrating batteries, peak power can also be significantly reduced. With this approach, we are making a decisive contribution to the decarbonization of our industries, while reinforcing our commitment to developing technologies that deliver tangible value to our customers and society.”

This technology directly addresses the increasing demands of power-critical applications, where speed, precision, and reliability are essential. Integrating the 1200 V CoolSiC MOSFET module into advanced solid-state circuit protection concepts creates a more resilient, efficient, and future-ready power infrastructure. This approach supports the growing adoption of DC grids and highly electrified environments, helping industrial and infrastructure operators meet rising performance and reliability requirements.

The post Upgrading Factory Power Safety with Silicon Carbide Semiconductors from Infineon and Siemens appeared first on ELE Times.

Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has unveiled qDesign, an AI-driven generative design service that programmatically generates, simulates and iterates on QPTs patented qAttach thermal interface layer for any power module, replacing weeks of human-in-the-loop CAD and simulation cycles with AI-generated topologies and automated optimization...

Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has unveiled qDesign, an AI-driven generative design service that programmatically generates, simulates and iterates on QPTs patented qAttach thermal interface layer for any power module, replacing weeks of human-in-the-loop CAD and simulation cycles with AI-generated topologies and automated optimization...

Зустріч із професором Чарльзом Кокеллом KPI4U-2 пн, 06/08/2026 - 12:15

The global power electronics industry is undergoing a major technological transition. For decades, silicon-based devices such as MOSFETs and IGBTs have been the backbone of power conversion systems. However, emerging applications—including electric vehicles (EVs), renewable energy grids, AI data centers, aerospace systems, and ultra-fast charging infrastructure—now demand significantly higher efficiency, power density, switching speed, and thermal capability than conventional silicon can provide.

To overcome these limitations, the semiconductor industry is rapidly adopting Wide-Bandgap (WBG) materials, primarily Silicon Carbide (SiC) and Gallium Nitride (GaN). These advanced semiconductor technologies are redefining modern power conversion architectures and enabling a new generation of compact, energy-efficient electronic systems.

Understanding Wide-Bandgap Semiconductors

The “bandgap” of a semiconductor represents the energy required for electrons to move from the valence band to the conduction band. Conventional silicon has a bandgap of approximately 1.1 eV, whereas SiC and GaN possess much larger band gaps of around 3.2 eV and 3.4 eV, respectively.

This wider bandgap enables several key electrical advantages:

• Higher breakdown electric field
• Lower switching losses
• Faster switching capability
• Higher thermal conductivity
• Operation at elevated junction temperatures
• Reduced conduction resistance

As a result, WBG devices can operate at significantly higher voltages, frequencies, and temperatures compared to silicon devices while maintaining excellent efficiency.

Comparison of Semiconductor Materials

Parameter	Silicon (Si)	Silicon Carbide (SiC)	Gallium Nitride (GaN)
Bandgap Energy	1.1 eV	3.2 eV	3.4 eV
Max Junction Temperature	~150°C	~200°C	~200°C
Switching Speed	Moderate	High	Very High
Breakdown Voltage	Moderate	Excellent	High
Thermal Conductivity	Moderate	Excellent	Good
Typical Applications	General Power	EVs, Solar, Industrial	Fast Chargers, Telecom

 

Silicon Carbide (SiC): The Backbone of High-Power Conversion

Silicon Carbide has emerged as the preferred technology for high-voltage and high-power applications. SiC MOSFETs and Schottky diodes exhibit lower switching losses and superior thermal performance compared to silicon IGBTs.

SiC Power Module Used in EV Inverters

One of the most important advantages of SiC is its ability to switch at very high frequencies while handling voltages exceeding 1200V. This dramatically reduces the size of passive components such as inductors, capacitors, and transformers.

In electric vehicles, SiC traction inverters deliver:

• Higher drivetrain efficiency
• Increased battery range
• Faster charging capability
• Reduced cooling requirements
• Lower system weight

Modern EV manufacturers are increasingly integrating SiC devices into:

• Main traction inverters
• On-board chargers (OBC)
• DC-DC converters
• Fast charging stations

For example, replacing silicon IGBTs with SiC MOSFETs can improve inverter efficiency from approximately 96% to over 99%. Although the efficiency increase appears small numerically, the resulting reduction in thermal losses significantly impacts vehicle range and thermal management.

SiC technology is also critical in renewable energy systems. Solar inverters and wind-turbine converters benefit from higher efficiency and lower heat generation, enabling improved grid stability and reduced operating costs.

Gallium Nitride (GaN): Enabling Ultra-Fast Switching

While SiC dominates high-voltage applications, Gallium Nitride excels in high-frequency, medium-power systems.

Compact GaN Fast Charger

GaN High Electron Mobility Transistors (HEMTs) switch much faster than silicon MOSFETs, often operating in the MHz range. This enables ultra-compact converter designs with extremely high power density.

GaN technology is rapidly expanding in:

• USB-C fast chargers
• Laptop adapters
• Telecom rectifiers
• Server power supplies
• Data-center power architectures

Modern GaN chargers delivering 100W or more are often nearly 50% smaller than equivalent silicon-based chargers. Higher switching frequencies allow the use of smaller magnetic components, directly reducing volume and weight.

Another major advantage is improved efficiency under high-frequency operation. Since switching losses are minimized, less heat is generated, reducing the need for bulky heat sinks.

This is especially important for AI data centers where energy efficiency has become a critical economic and environmental factor.

Why Silicon Is No Longer Sufficient

Traditional silicon devices face several physical limitations in modern high-performance systems:

• Significant switching losses at high frequencies
• Limited high-temperature operation
• Larger cooling systems
• Lower power density
• Reduced efficiency at high voltages

As industries move toward electrification and compact system architectures, these limitations become increasingly problematic.

WBG devices overcome these constraints by enabling:

• Smaller converter footprints
• Higher efficiency
• Reduced cooling infrastructure
• Faster transient response
• Increased reliability

Engineering Challenges of WBG Devices

Despite their advantages, WBG technologies introduce new design challenges for electronics engineers.

Key Challenges Include:

• High device cost
• Fast switching-induced EMI
• Complex gate-driver design
• PCB layout sensitivity
• Thermal stress management
• Packaging reliability

The extremely fast switching edges of GaN and SiC devices can generate severe electromagnetic interference (EMI) if PCB parasitics are not carefully minimized. Engineers must therefore adopt advanced layout techniques, Kelvin-source connections, and optimized gate-drive circuits.

Thermal management also remains a critical design consideration despite improved material performance.

Future Outlook of WBG Power Electronics

Future EV and Renewable Energy Ecosystem

The adoption of Wide-Bandgap semiconductors is expected to accelerate dramatically over the next decade. Industry analysts predict strong growth driven by:

• Electric mobility
• Smart grids
• Renewable energy integration
• Industrial automation
• Aerospace electrification
• AI computing infrastructure

SiC is likely to dominate high-voltage transportation and energy applications, while GaN will become mainstream in compact consumer and communication systems.

For electronics engineers, understanding WBG device physics, high-frequency design techniques, EMI mitigation, and thermal optimization is becoming increasingly essential.

The transition from silicon to Wide-Bandgap semiconductors is not simply an incremental improvement—it represents a fundamental shift in the future of power electronics engineering.

The post Wide-Bandgap (WBG) Power Electronics: Transforming the Future of High-Efficiency Energy Systems appeared first on ELE Times.

As hyperscalers and enterprise operators race to build increasingly powerful AI infrastructure, power delivery and energy efficiency are emerging as the most critical constraints. Industry analysts estimate that AI rack power requirements could grow beyond 1MW/rack in the very near future...

As hyperscalers and enterprise operators race to build increasingly powerful AI infrastructure, power delivery and energy efficiency are emerging as the most critical constraints. Industry analysts estimate that AI rack power requirements could grow beyond 1MW/rack in the very near future...

In booth 20036 at 2026 IEEE MTT-S International Microwave Symposium (IMS) in Boston, MA, USA (7–12 June), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) is highlighting its latest innovations under the theme: ‘Proven RF Solutions. Live at IMS’...

In booth 20036 at 2026 IEEE MTT-S International Microwave Symposium (IMS) in Boston, MA, USA (7–12 June), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) is highlighting its latest innovations under the theme: ‘Proven RF Solutions. Live at IMS’...

In the next five years, the embedded landscape will undergo a fundamental re-architecture. We are moving away from monolithic, “set-and-forget” devices toward agile, connected platforms that learn and adapt. For any modern embedded system development company, the challenge is no longer just making a chip work—it’s about building a sustainable, secure, and intelligent ecosystem.

1. Software-Defined Intelligence: We are moving toward “Software-Defined Hardware,” allowing an embedded system development company to push major feature updates and optimizations to devices post-deployment, significantly extending product lifecycles.
2. The Edge AI Revolution: Software development in embedded system design now prioritizes local processing. On-device AI (TinyML) enables real-time decision-making and better privacy by reducing reliance on constant cloud connectivity.
3. AI-Augmented Development: Next-gen embedded system development tools now feature AI “co-pilots.” These tools use digital twins and automated code generation to simulate hardware behavior and catch bugs long before a prototype exists.
4. Security-by-Design: Security is no longer optional. Future-proof systems integrate Hardware Root of Trust and Zero Trust architectures from day one to meet strict global regulations and protect brand integrity.
5. Sustainable Engineering: The industry is pivoting toward “green” embedded systems. By using energy-aware toolchains and ultra-low-power architectures like RISC-V, developers can create devices that run for years on a single charge.

The Shift to Software-Defined Hardware: Historically, embedded system development was dictated entirely by hardware constraints. In 2026, we are seeing the rise of Software-Defined Hardware. This means devices are increasingly built on reconfigurable platforms where their primary functions can be altered or enhanced through remote updates.

AI and Edge Computing: The Intelligence Revolution: The most profound trend in software development in embedded system design is the move from reactive logic to proactive decision-making.

Edge AI & TinyML: Instead of streaming raw data to the cloud, modern systems use on-device AI to process information locally. This reduces latency, saves bandwidth, and improves privacy.

Real-Time Inference: From autonomous vehicles to industrial robots, the future belongs to systems that can perform complex sensor fusion and make microsecond decisions at the network’s edge.

The Evolution of Embedded System Development Tools: To keep up with rising complexity, the “one-engineer-one-workbench” model is being replaced by collaborative, AI-integrated environments.

Automated Code Generation: Modern embedded system development tools are now incorporating AI-driven “co-developers” that assist with boilerplate code, initial driver configurations, and real-time bug detection.

Digital Twins & Simulation: Tools like MATLAB/Simulink and virtual hardware platforms allow engineers to simulate real-world behavior before a single piece of hardware is manufactured, reducing time-to-market by over 30%.

Security-First Tooling: With 68% of IoT attacks originating from insecure firmware, new tools focus on automated vulnerability scanning and secure boot configuration as a standard part of the build process.

Security as a Non-Negotiable Standard: We are entering an era where security is no longer a feature—it is a baseline for viability. In 2026, software development in embedded system projects must adhere to global regulations like the EU Cybersecurity Resilience Act.

Zero Trust Architectures: In the past, security was like a castle: once you were inside the gates, the system trusted you completely. Zero Trust changes that by assuming that the network is always “guilty until proven innocent.” Instead of trusting a device just because it is connected, the system requires continuous authentication.

Every time the device, the user, or the network tries to share data or access a file, it must re-verify its identity. This “never trust, always verify” approach ensures that even if a hacker manages to get into one part of your system, they cannot move around freely to steal data from other parts.

Hardware Root of Trust: Standard software-only encryption is like having a strong lock on a door, but keeping the key under the doormat—if a hacker gets deep enough into the software, they can find the key. A Hardware Root of Trust moves that “key” into a physically separate, tamper-proof chip within the device, known as a secure element.

This protects the device’s unique digital “identity” from the very second it is powered on. Because this identity is anchored in the physical hardware, hackers can not forge or change the software to trick the system. It ensures that the device is exactly what it says it is from the moment it boots up.

Why Partner with a Future-Ready Embedded System Development Company?: The complexity of modern systems—combining 5G connectivity, Edge AI, and rigorous security—requires a multidisciplinary approach. A leading embedded system development company like eByteLogic provides: 

Cross-Industry Expertise: The best innovations often happen when ideas from one industry are used to solve problems in another. For example, the high-speed data processing needed for Automotive self-driving systems can be used to make Industrial IoT robots smarter and faster. Similarly, the extreme reliability and “fail-safe” standards required for Medical devices can be applied to factory sensors to prevent expensive downtime.

By working with a partner who has broad experience across different fields, you get a product that is not just functional, but built to the highest global standards of safety and performance.

End-to-End Vision: A product’s life has many stages, and a great partner manages them all. End-to-End Vision means we don’t just write some code and walk away. We start at the very beginning with the initial board bring-up, making sure the physical chips and the software are “shaking hands” correctly. But we also look years into the future. We provide long-term CVE monitoring, which means we constantly watch for new security threats (vulnerabilities) and create “patches” to fix them. This ensures your product stays safe and works perfectly from the first day it’s turned on until the day it is retired.

Agile Scalability: In the past, if you wanted to launch three different versions of a product, you often had to start from scratch three times. With Agile Scalability, we build one strong, “common architecture”—like a high-quality chassis for a car. Once that foundation is solid, we can easily add or remove features to create multiple product variants (like a “Lite” version and a “Pro” version). This approach saves you a massive amount of time and money because you aren’t reinventing the wheel for every new idea; you are simply building on top of a proven, scalable platform.

The post What is the Future of Embedded Systems? appeared first on ELE Times.

Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has developed a 650V GaN IC for automotive applications that addresses automakers’ desire to improve inverter efficiency. ICeGaN helps designers to realise smaller, lighter inverters that help to extend EV range, which is crucial in continuing to drive consumer momentum away from internal combustion engine ICE powertrains and towards EVs...

In a major push toward technological sovereignty, India is aiming to meet 50% of its domestic semiconductor demand through local manufacturing by the fiscal year 2035. According to recent estimates from the Ministry of Electronics and Information Technology (MeitY), the country is embarking on a massive decade-long scaling operation to transform itself from a pure software powerhouse into a hardware manufacturing giant.

The aggressive timeline is fueled by a stark reality: India’s semiconductor import bill skyrockets. Imports prevail a staggering $30.3 billion in FY25, a sharp climb from $19.3 billion in FY23 and $11.9 billion in FY19. With NITI Aayog projecting domestic chip demand to experience a five-fold surge, jumping from $44 billion in FY26 to $206 billion by 2035, policymakers view localized fabrication as an economic and strategic imperative to protect foreign exchange reserves.

Operationalization Phase: Initiating Commercial Fabrication for this Year

India isn’t merely planning for the future; the groundwork is already in place. MeitY officials confirmed that out of 12 projects cleared under the India Semiconductor Mission (ISM) incentive scheme, at least four facilities are scheduled to begin commercial production before the end of this year.

Initial waves of domestic chips led by:

The Domestic Operators: Combined facility plans from the Tata Group, CG Power, and Kaynes are projected to churn out a cumulative 69 million chips daily once commercial operations hit their stride.

Next-Gen Tech: The government has also greenlit an advanced project to introduce micro-LED technology to the country. The first micro-LED chips (ranging from 30 to 125 microns) are expected to roll off assembly lines within the next 22 months.

Upgrading the Blueprint of India’s Semiconductor Mission 2.0

The Ecosystem Strategy: Unlike early phases focused strictly on testing and packaging (OSAT) or specific fabs, ISM 2.0 will heavily target the deep-tech supply chain. Funding will be directed toward localizing critical raw materials, specialized chemicals, ultra-pure gases, and advanced manufacturing machinery.

The transition from isolated assembly plants to a self-sustaining tech ecosystem, the government is preparing to roll out ISM 2.0 with a massive proposed budget of Rs 100,000 crore (~$12 billion). By scaling up mature nodes, power electronics, specialty analog, and compound semiconductors, NITI Aayog envisions an indigenous semiconductor ecosystem valued at $120 billion by 2035. If successful, the initiative will drastically alter global supply chains, positioning India alongside the US, the EU, and China in the race for silicon independence.

 

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