Збирач потоків

I spent few days trying to make z80 cpu based computer clone. As in every good project first step was performing Hello World output to serial for starters. I got completely stuck as I was getting only letter H and nothing else. I rewired chip selection logic several times, replaced RAM chip, scoped everything I could and only then noticed that top power rails are not connected (you can see top rails are not bridged) meaning RAM was never powered in a first place. I feel like a complete moron… submitted by /u/Thick_Swordfish6666 [link] [comments]

Having a particular plan for the power supply (as described in the posts before part 2 - Planning and part 1 - Idea) it's possible to start schematics itself. I use and really enjoy KiCAD - it has everything I need for my skills and projects I create. As the first step with the schematics (see - github.com/condevtion/i2c-pps-hw) I decided mostly to transform the diagram from the previous post to a set of pages and define networks and busses to connect them. You can see a screenshot of the root page in the first picture with the result. The second picture contains everything from the rest of the pages. It's not much for now - the controller's symbol, and a bunch of network and hierarchical labels to enable so called "sheet pins". I made the symbol starting from one for BQ25798 existed in KiCAD's global library. The chip is quite different but it can be easily transformed by majorly editing pins. While the footprint and 3D model can be requested from Ultra Librarian site by like provided on TI page for BQ25758S. All symbols and footprints I usually add to local projects libraries just not to mess with global library. In KiCAD its a bit tricky to create nice, short names for busses. You need to create aliases in "File" > "Schematic Setup" > "Bus Alias Definitions" and then you can use them across all pages of a project. For now I came up with following networks and busses: VIN - positive input voltage. The master switch page should contain an input connector and protection circuit (fuse, TVS diode) after which the network starts. As well is used to power the digital I/O and indication block VINP - positive input voltage after the master switch itself (goes to the input filter) EN - master switch control signal (should be high to turn the switch on and low to turn it OFF) VINN - output of the input filter VOUT - the output voltages bus (contains power stage output and whole device output networks, goes to the output filter) CSIN - the input current sensor bus (goes to ACN and ACP pins of the controller) CSOUT - the output current sensor bus (goes to SRN and SRP pins) I2C - I2C bus itself (connected to SCL and SDA pins) GPIO - groups digital I/O lines: interrupt, power good, status, and chip enable PROG - groups the rest of analog input lines which should be connected to the programming block to set operating mode and limits for the controller Maybe, going through detailed design these will require changes. The next step is to draft every page with actual design probably skipping at first particular values for components. submitted by /u/WeekSpender [link] [comments]

First and foremost what are reflections? Reflections in PCB are like echoes on a road for electrons. Imagine a PCB trace (the thin copper line) is a highway. A signal is a tiny super-fast car zooming down that highway. Now… If the road suddenly changes, the trace gets thinner or wider, it hits a connector or the layer changes, it’s like the car suddenly hit a speed bump or a wall. Instead of all the signal energy moving forward nicely, some of it bounces back. This bounce is a reflection. Why does it happen? Because of impedance mismatch. If the trace impedance (say 50Ω) suddenly meets something that is not 50Ω, the signal doesn't have enough voltage or current to pass through and reflects back. What are the three types of impedances a signal encounters? Source impedance, Characteristic impedance and Load Impedance. Source Impedance (Zₛ) : This is the output resistance of the driver. It's what the signal encounters at the chip pin sending the signal (before it's launched onto the trace). Inside that chip, there’s some internal resistance. That’s the source impedance. Characteristic Impedance ( Z₀): This is the natural impedance of the trace itself. This is NOT resistance like a resistor. It’s the ratio of voltage to current for a wave traveling down the trace. Which is affected by the trace width, thickness, distance to ground plane (return path), dielectric material etc. Load Impedance (Zₗ): This is the input impedance of the receiving device. It’s the chip pin at the other end of the trace. The load decides what happens when the signal arrives. The Golden Rule (No Reflection Condition) Maximum happiness is achieved when: Zₛ = Z₀ = Zₗ What happens when one is higher or lower than the other? Now we’re getting into the “who wins the fight” part of signal integrity. Case 1: Z₀ > Zₛ (Trace impedance is bigger than source impedance) The source is “stronger” (lower resistance) than what the trace expects. When the signal hits the load and reflects back, the reflection at the source will be positive. That means, the returning wave adds to the original signal, we will see overshoot and possible ringing as well. We may see the waveform jump higher than it should before settling. Case 2: Z₀ < Zₛ (Trace impedance is smaller than source impedance) Now the source is “weaker” compared to the trace. When the reflection returns to the source, the reflection at the source becomes negative. We may see undershoot, slower settling and reflected wave subtracting from the signal. The signal may dip below expected levels before stabilizing. Image Credits: Right the first time by Lee Ritchey . Best book I have read on signal integrity and design. submitted by /u/Capital_Football_604 [link] [comments]

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I was trying to identify some IC's recently and found out that ChatGPT is incredibly good at identifying IC parts from their markings with some extra context information. It can require some prodding and trial and error and giving it some hints helps e.g. a description about what you think it does, component footprint, visible marking, the device you found it on. and force it to list number of alternatives. You can also give it a picture and let it find the layout context. Example I was trying to identify the component marked: KP05 5MES. I gave it the picture and the prompt: "" Help me find this component: The packaging has these markings: KP05 5MES It has aSOIC-8 package It is a high speed component that operates in the GHz range. Found on the front end of a GigaWave 6400 Give me a list of possible alternatives. "" One of the suggested components is the MC10EP05 and I could then verify it by looking at the datasheet That's pretty cool submitted by /u/TileSeeker [link] [comments]

submitted by /u/goldensyrupgames [link] [comments]

🕔 Дайджест актуальних подій та конкурсів від Відділу академічної мобільності kpi пт, 02/20/2026 - 22:30

submitted by /u/huico42 [link] [comments]

1206 resistor for scale, and it works! This is a led driver TPS92201a, those legs are now antennas. submitted by /u/General_Action_3685 [link] [comments]

Rohde & Schwarz will present its advanced test and measurement solutions for the embedded industry at embedded world Exhibition & Conference in Nuremberg, Germany. Visitors can find the T&M expert at booth 4-218 in hall 4 of the Nuremberg Exhibition Centre from March 10 to 12, 2026. There, they can delve into the company’s innovations designed to help engineers enhance device energy efficiency, expedite EMC compliance within the design process, speed up digital protocols debugging, and meet required regulatory standards for wireless interfaces.

Next generation oscilloscopes

At Embedded World, Rohde & Schwarz will showcase its ever-growing range of next-generation oscilloscopes, from MXO 3 to MXO 5, all powered by the same next-generation MXO-EP ASIC technology from Rohde & Schwarz, originally introduced with the MXO 4 in 2022. The latest addition, the compact MXO 3, comes with up to eight channels and offers a combination of features that rival higher-class oscilloscopes, such as a real-time capture rate of up to 99% and hardware-accelerated functionality on math, spectrum and zone trigger.

Ensuring reliability in power electronics

Combined with high voltage, current and optically isolated probes (R&S RT-ZISO), the eight-channel models of MXO 3 and MXO 5 extend their capabilities to power electronics applications. For power conversion, the instruments’ eight channels and 18-bit HD mode provide critical visibility into complex systems like motor drives and inverters, enabling precise measurements for efficiency and optimisation. Furthermore, they simplify power sequencing analysis with simultaneous multi-channel observation and deep memory of up to 500 Mpts, enabling longer recording durations and precise analysis of small signal events. Additionally, their fast spectrum analysis capability makes them excellent tools for quickly identifying EMI issues and noise sources.

EMI testing for embedded systems

Every electronic product and component is likely to emit conducted or radiated electromagnetic emissions. Especially for densely packed embedded systems, early debugging helps to isolate and correct EMI issues and accelerates time-to-market. As a leader in EMC testing, Rohde & Schwarz will present solutions that integrate EMI testing into the product design process. Visitors can learn how to use the R&S EPL1007 EMI test receiver in fast, accurate and reliable EMI pre-compliance and compliance measurements up to a frequency range of 7.125 GHz. The instrument offers device developers and conformance test houses the flexibility to upgrade with evolving needs – from preselection, including a preamplifier, up to a full CISPR 16-1-1 compliant test receiver.

Verifying signal integrity of digital designs

All hardware elements on a board layout are potential causes of signal degradation. To test the signal integrity on a PCB, Rohde & Schwarz will showcase its R&S ZNB3000 vector network analyser at embedded world, covering up to 40 GHz. This VNA, part of the new midrange family offering instruments with a maximum frequency range of up to 54 GHz, has redefined the standard for speed, precision and versatility with its industry-leading dynamic range, fast measurement speed, and scalable upgrades, perfectly suited for signal integrity applications. Visitors can experience the instrument’s advanced de-embedding techniques, which facilitate characterising the test fixture, extracting the S-parameters and de-embedding the test fixture in a user-friendly manner, with the signal quality visualised by a simulated eye diagram.

Testing of high-speed interfaces

High-speed digital interfaces are integral to electronic designs, with increasing data rates and integration density posing new challenges at the IC, board and system level. Trade show visitors will learn at the Rohde & Schwarz booth about powerful signal integrity test tools for system verification, debugging, and compliance testing for different high-speed busses. Rohde & Schwarz will showcase, for example, 1GBASE-T Ethernet compliance testing using the R&S RTO6 oscilloscope and related equipment to ensure that a 1 Gigabit Ethernet (1GbE) physical layer (PHY) transceiver meets the specifications outlined in the IEEE 802.3 standard. In a different setup, Rohde & Schwarz will showcase its R&S RTP164B oscilloscope for signal integrity testing on a multitude of standards, including DDR5 and USB3.2.

When it comes to automotive interfaces, the emerging standards, including Automotive Ethernet, OpenGMSL or ASA (Automotive SerDes Alliance), bring new challenges for design. Rohde & Schwarz already supports all of these new standards and will showcase comprehensive validation using the R&S RTP164B oscilloscope, featuring signal integrity debugging and automated compliance on ASA, as well as protocol decoding of 10Base-T1S to ensure robust and reliable link performance.

Battery life testing

Battery life is critical for battery-powered devices. Rohde & Schwarz will demonstrate in real time how the features of smart devices affect their power consumption. The setup is based on the R&S NGU source measure unit emulating a battery. The integrated analysis tool captures and visualises current across sleep-to-active transitions. In another application on battery testing with the R&S NGM202, cells will be charged and discharged to characterise battery behaviour and build accurate battery models.

Wireless connectivity testing

Embedded systems increasingly incorporate wireless connectivity as a core function. Thorough testing is essential to ensure reliable performance, interoperability and compliance with industry standards. The complexity of these standards requires specialised test equipment and expertise. The CMP180 radio communication tester from Rohde & Schwarz contains two analysers, two generators and two sets of eight RF ports in a single box and supports many cellular and non-cellular technologies across R&D, pre‑conformance and mass production. At embedded world, visitors will experience the CMP180 testing both Bluetooth LE and Wi-Fi 8 devices.

The platform already supports physical layer testing for the new Bluetooth LE Channel Sounding and new Bluetooth LE High Data Throughput (HDT) feature, a cornerstone for the next generation of Bluetooth Low Energy (LE), offering increased capacity, better energy efficiency, improved spectrum efficiency and enhanced reliability. Wi-Fi 8, based on the IEEE 802.11bn standard, sets new expectations for consistent, ultra-high-reliability and quality connectivity. Designed to support a growing number of connected devices and demanding applications like XR and industrial IoT, the CMP180 helps engineers navigate the technical complexities of 802.11bn throughout the entire device lifecycle in non-signalling mode with its advanced capabilities and broad bandwidth support.

Efficient production lines with tailored solutions
For production tests at component, module and system level, Rohde & Schwarz will showcase a rack-mounted test and measurement configuration, featuring the rack-optimised MXO 5C oscilloscopes and the PVT360A performance vector tester. This setup will demonstrate how tailored Rohde & Schwarz test solutions contribute to a production environment built for reliable validation, streamlined workflows and maximised throughput.

These and other test solutions for the embedded industry can be found at the Rohde & Schwarz booth 4-218 in hall 4 at the Embedded World Exhibition & Conference from March 10 to 12, 2026, in Nuremberg, Germany.

The post R&S showcases its comprehensive embedded systems test solutions at embedded world 2026 appeared first on ELE Times.

День Героїв Небесної Сотні kpi пт, 02/20/2026 - 11:20

In this post, we will take a gentle dive into logarithmic amplifiers—commonly known as log amps—those quietly powerful circuits that work behind the scenes to decode exponential signals and tame wide dynamic ranges.

Log amps: Basics and building blocks

To set the stage, a logarithmic amplifier is an electronic circuit that produces an output voltage proportional to the logarithm of its input signal, whether voltage or current. By using the exponential electrical behavior of semiconductor junctions—typically diodes or bipolar junction transistors—log amps offer an elegant way to compress signals that span a wide dynamic range, such as those from photodiodes, radio frequency detectors, or audio sensors, into a more manageable scale.

Coming to log amp architecture, these specialized circuits produce an output voltage proportional to the logarithm of the input signal amplitude. There are three fundamental architectures commonly employed to realize log amps: the basic diode log amp, the successive detection log amp, and the true log amp, which is implemented using cascaded semi-limiting amplifiers.

In the simplest form, the diode log amp exploits the exponential current–voltage relationship of a silicon diode. Since the voltage across a diode is proportional to the logarithm of the current flowing through it, placing the diode in the feedback path of an inverting operational amplifier allows the circuit to generate an output voltage proportional to the logarithm of the input current.

Figure 1 Circuit diagram illustrates the basic setup of an op-amp-based logarithmic amplifier with a diode. Source: Author

However, this basic configuration suffers from limited dynamic range and strong temperature dependence. These issues are commonly addressed by using diode-connected transistors (see figure below) or matched transistor pairs with temperature-compensation techniques, which extend the usable range and stabilize the logarithmic response.

Figure 2 Circuit diagram depicts the basic setup of an op-amp-based logarithmic amplifier with a diode-connected transistor. Source: Author

Here, note that the base of the transistor is grounded, effectively matching the virtual ground at the op-amp’s inverting input.

Successive detection log amps improve performance by using a chain of detectors that progressively measure signal levels, providing better accuracy and wider dynamic range.

True log amps, on the other hand, employ cascaded semi-limiting amplifiers to approximate the logarithmic response more faithfully across a broad frequency spectrum, making them particularly useful in RF and instrumentation applications.

Beyond their circuit topologies, log amps are distinguished by performance factors such as dynamic range, accuracy, bandwidth, and temperature stability. Simple diode-based designs are attractive for their ease of implementation, but they quickly run into limits of precision and thermal drift.

Integrated log amp ICs and true log architectures, by contrast, deliver superior linearity, wider operating ranges, and better stability across frequency and temperature. These strengths make log amps indispensable in real-world applications: compressing optical signals from photodiodes, measuring RF power levels in communication systems, shaping audio dynamics in compressors and level meters, and handling biomedical signals that span several orders of magnitude.

In each case, the ability to tame wide-ranging inputs into a manageable scale is what makes the logarithmic amplifier such a versatile tool.

When it comes to practical design, selecting the right log amp architecture depends on the signal environment and accuracy requirements. For low-frequency or moderate dynamic-range applications, a diode-connected transistor stage may suffice, if temperature compensation is included.

In RF systems, successive detection log amps are often favored for their speed and wide bandwidth, while true log amps excel when precise linearity across many decades of input is critical. Designers must also weigh trade-offs in noise performance, offset errors, and calibration complexity, as these factors directly influence measurement fidelity. Ultimately, the choice of implementation reflects a balance between simplicity, precision, and the demands of the target application.

Log amps in practice

Having explored the basics, let us now step briefly into the practical ground for a quick walk. Logarithmic amplifiers are not only found in professional instrumentation but also accessible to hobbyists and makers who enjoy experimenting with signal compression. For engineers, log amp ICs and modules provide reliable building blocks for RF measurement, optical detection, or audio dynamics.

For makers, evaluation boards and simple circuits using diode-connected transistors offer approachable ways to see logarithmic behavior firsthand without complex design overhead. While these options are not exhaustive, they illustrate how log amps move from textbook principles into real hardware, serving both the precision needs of engineers and the curiosity of hobbyists.

As a quick recall, logarithmic amplifiers can be grouped into diode-based designs that rely on the exponential I–V characteristic of diodes, transistor-based circuits that exploit the exponential base-emitter relationship in BJTs for greater precision, and multi-stage demodulating log amps that cascade gain and detector stages to achieve very wide dynamic ranges in RF and IF measurement.

Another group relates to the specialized DC/baseband-demodulating log amps that extend operation all the way down to DC, making them particularly useful for envelope detection, accurate power measurement, and wideband or baseband signal analysis.

Back to the lineup of popular log amp ICs, the trend is clear: newer designs lean heavily on high-speed, precision CMOS and BiCMOS technology, while many classic bipolar parts are being retired. The AD606 and TL441 devices now sit in the legacy category; TI lists the TL441 as active for existing designs but not recommended for fresh projects, and AD606 has largely been replaced by newer RF-focused families.

On the other hand, TI’s LOG114, LOG200, and the high-speed LOG300 remain in full production, serving demanding optical and medical sensing applications with wide dynamic range. Analog Devices also continues to back the AD8307 and AD8310 devices, which have become go-to choices for RF power measurement, thanks to their stability, accuracy, and broad availability.

Log-amp modules built around AD606 can still be found from a few niche suppliers, but they are increasingly rare and best suited for maintaining older RF projects. For newcomers or experimenters, modules based on the AD8307 and AD8310 are far more practical picks.

They are widely available, inexpensive, and offer excellent stability across frequency and temperature, making them ideal for getting your hands wet with RF power measurement, signal monitoring, or even DIY spectrum-related builds. Their straightforward interfaces and robust documentation also make them a clever starting point for hobby labs and quick prototypes.

Figure 3 Readily available modules like the AD8307 RF log detector simplify RF power measurement for engineers and hobbyists alike. Source: Author

Now recall that the classic diode/op-amp (or transistor/op-amp) log amplifier suffers from limited frequency response, particularly at low signal levels. For higher-frequency applications, designers turn instead to detector-based and true log architectures.

While these differ in detail, they share a common principle: rather than relying on a single amplifier with a logarithmic transfer characteristic, they employ a cascade of similar linear stages, each with well-defined large-signal behavior, to achieve accurate logarithmic response.

Closing line

Let me say this plainly: after experimenting with discrete log-amp circuits, the most straightforward integrated step for hobbyists is the classic DC log-amp application—measuring light intensity. Optical logging setups are easily built by placing a photodiode at the input of the log amp, and a device such as MAX4206 makes a practical choice in this case.

This post focused on logarithmic amplifiers; I have not covered antilog amplifiers here, leaving that exploration to readers who wish to dive deeper. If you have worked with log amps—or even experimented with photodiode setups—share your experiences, design tips, or favorite chips to help fellow engineers and hobbyists refine their own signal-logging projects.

T. K. Hareendran is a self-taught electronics enthusiast with a strong passion for innovative circuit design and hands-on technology. He develops both experimental and practical electronic projects, documenting and sharing his work to support fellow tinkerers and learners. Beyond the workbench, he dedicates time to technical writing and hardware evaluations to contribute meaningfully to the maker community.

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The post Logarithmic amplifiers: A quick tour of theory and practice appeared first on EDN.

A few months back I shared a board I designed here. I loved the support from the community so I will be open sourcing the design for everyone to enjoy this. Open source link - https://github.com/NoamanKhalil/Keyboard-pico submitted by /u/noamankhalil [link] [comments]

Thyratron inside a Varian EDGE (linear accelerator). submitted by /u/elodam [link] [comments]

Luminus Devices Inc of Sunnyvale, CA, USA — which designs and makes LEDs and solid-state technology (SST) light sources for illumination markets —and APC Electronics (APC-E) of Bend, OR, USA — which designs and manufactures wide-bandgap power semiconductor products — have teamed up to deliver energy-efficiency gains for the global LED lighting industry. This exclusive collaboration pairs Luminus’ high-brightness LED products with APC-E’s silicon carbide (SiC) power semiconductors, enabling customers to build system architectures that maximize luminaire power efficiency, thus reducing operational costs and environmental impact...

ST’s VNQ9050LAJ 4-channel high-side driver controls 12-V automotive ground-connected loads via a 3-V and 5-V CMOS-compatible interface. Operating from 4-V to 28-V with typical RDS(on) as low as 50 mΩ per channel, the device remains active during cold-crank events until the supply falls to the 2.7-V (max) undervoltage shutdown threshold. This performance supports compliance with LV124 (Rev. 2013) requirements for low-voltage operation and automotive transients.

Based on ST’s VIPower-M09 technology, the driver protects resistive, capacitive, and inductive loads. Integrated current sensing uses an on-chip current mirror with a sense FET that tracks the main power FET, enabling accurate load monitoring. The sensed current is available at an external pin, where a resistor converts it to a proportional voltage for continuous diagnostics and fault detection.

The VNQ9050LAJ offers robust protection and diagnostics for 12‑V automotive loads. It features integrated current sensing for overload, short-circuit, and open-load detection. The driver also includes overvoltage clamping, thermal-transient limiting, and configurable latch-off for overtemperature or power limitation, with a dedicated fault-reset pin. Additional protections—such as electrostatic discharge, loss-of-ground, loss-of-VCC, and reverse-battery—ensure reliable operation under extreme conditions.

The VNQ9050LAJ is in production in a thermally enhanced Power-SSO16 package, priced from $1.09 each for 1000-piece orders.

VNQ9050LAJ product page 

STMicroelectronics

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Empower has launched three embedded silicon capacitors (ECAPs) for AI and high-performance computing (HPC) processors. The portfolio includes the EC2005P (9.34 μF in a 2×2-mm package), EC2025P (18.68 μF in a 4×2-mm package), and EC2006P (36.8 μF in a 4×4-mm package). These components are designed for integration into processor substrates to support elevated current density and fast transient load demands.

As AI and HPC workloads increase, conventional board-mounted capacitors struggle to maintain low impedance and fast response. These ECAP devices provide high capacitance density with ultralow equivalent series inductance (ESL) and resistance (ESR), improving power delivery network (PDN) performance when embedded close to the die. Tight dimensional tolerances ensure compatibility with advanced packaging flows.

The ECAP portfolio also supports vertical power delivery architectures, including Empower’s Crescendo platform, to reduce loop inductance and system footprint. The devices provide a scalable approach for integrating silicon capacitance directly within processor packages.

The EC2005P, EC2025P, and EC2006P ECAPs are now in mass production. Learn more about the ECAP portfolio here.

Empower Semiconductor 

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Samsung has begun mass production and commercial shipments of its HBM4 DRAM, marking what it describes as an industry first. Built on Samsung’s 6th-generation 10-nm-class DRAM process with a 4-nm logic base die, this high-bandwidth memory is optimized for performance, reliability, and energy efficiency in AI, HPC, and datacenter applications.

Samsung’s HBM4 delivers a consistent transfer speed of 11.7 Gbps — roughly 46% faster than the 8-Gbps industry standard and a 1.22× improvement over the 9.6-Gbps maximum of HBM3E. Memory bandwidth per single stack reaches up to 3.3 TB/s, a 2.7× increase over HBM3E. Current 12-layer stacking enables capacities from 24 GB to 36 GB, with future 16-layer stacks projected to expand offerings up to 48 GB.

To handle the doubled data I/Os from 1024 to 2048 pins, advanced low-power techniques were applied to the core die. Samsung’s HBM4 improves power efficiency by 40% via low-voltage TSVs and optimized power distribution, offers 10% better thermal resistance, and increases heat dissipation by 30% over HBM3E, ensuring reliable high-performance operation.

For more details on this announcement, see Samsung’s press release. Explore the broader HBM portfolio here.

Samsung Semiconductor 

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The Keysight Chiplet 3D Interconnect Designer automates the design of 3D interconnects for chiplet and 3DIC advanced packages. By removing time-consuming manual steps, the tool streamlines the optimization of complex interconnect structures—including vias, transmission lines, solder balls, and micro-bumps—while ensuring signal and power integrity in densely packed systems.

Part of Keysight’s EDA portfolio, the software provides a pre-layout workflow for advanced multi-die integration, UCIe compliance, automated routing, and robust simulation capabilities. It handles complex geometries—including hatched or waffled ground planes—that are critical for addressing manufacturing and fabrication constraints, particularly in silicon interposers and bridges.

The software can operate independently or alongside Keysight’s other EDA tools, enabling teams to seamlessly incorporate 3D interconnect workflows into their existing design environments.

To learn more about the Keysight Chiplet 3D Interconnect Designer (W3510E) and request a quote, visit the product page linked below.

W3510E product page 

Keysight Technologies 

The post Software accelerates 3D interconnect design appeared first on EDN.

Navitas Semiconductor has announced its 5th-generation GeneSiC platform featuring high-voltage trench-assisted planar (TAP) SiC MOSFETs, describing it as a significant advancement over previous generations. The new 1200-V MOSFET line complements Navitas’ ultra-high-voltage 2.3-kV and 3.3-kV devices based on its 4th-generation GeneSiC technology.

The latest generation incorporates the company’s most compact TAP architecture to date, combining planar-gate ruggedness with trench-enabled performance gains to improve efficiency and long-term reliability. It targets high-voltage applications including AI data centers, grid and energy infrastructure, and industrial electrification.

Compared with the prior 1200-V devices, the new generation delivers a 35% improvement in RDS(on) × QGD figure of merit, reducing switching losses and enabling cooler, higher-frequency operation. About a 25% improvement in QGD/QGS ratio, together with a stable high threshold voltage (VGS,TH ≥ 3 V), strengthens switching robustness and improves immunity to parasitic turn-on in high-noise environments.

Navitas expects to introduce products based on its 5th-generation technology in the coming months. For additional information, contact a Navitas representative or email info@navitassemi.com.

Navitas Semiconductor

The post Navitas tightens SiC losses with refined TAP appeared first on EDN.