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КПІ першим серед університетів України приєднався до BankID НБУ на некомерційних умовах kpi ср, 06/17/2026 - 18:56

Інновації КПІ ім. Ігоря Сікорського на INSCIENCE Conference KPI4U-2 ср, 06/17/2026 - 17:58

Відбулася конференція "Бізнес, інновації, менеджмент: проблеми та перспективи" Інформація КП ср, 06/17/2026 - 17:55

19 наукових видань КПІ ім. Ігоря Сікорського включено до Переліку фахових видань України категорії «Б» kpi ср, 06/17/2026 - 15:36

New analyzers help engineers capture more signal behavior with faster measurements, reducing rework and accelerating wireless design and validation 

Keysight Technologies, Inc. introduces the Pro XA6 SA6320A and Expert XA5 SA6210A signal analyzers, designed to help engineers design and validate increasingly complex wireless systems faster and with greater confidence. As wireless systems evolve toward wider bandwidths, higher frequencies, and more advanced multi-antenna architectures, RF validation workflows are becoming more difficult and time-consuming. Even with multiple captures and repeated tests, engineers often lack complete visibility into signal behavior. These workflows can slow debugging, increase measurement uncertainty, and delay identification of signal impairments until late in development.

Keysight’s Pro XA6 SA6320A and Expert XA5 SA6210A signal analyzers address these challenges by enabling engineers to accelerate design, debugging, and validation workflows, reduce re-runs, and improve confidence when characterizing next-generation wireless, radar, and wideband systems. The Pro XA6 SA6320A delivers up to 8 GHz analysis bandwidth, full preselection up to 67 GHz, and advanced RF measurement capabilities for demanding wideband, millimeter-wave, radar, and electromagnetic spectrum operations applications. The Expert XA5 SA6210A delivers fast swept measurements up to 32 GHz, a wide analysis bandwidth up to 2 GHz, and dual-channel RF analysis in a single platform optimized for everyday wireless design and validation. 

The Pro XA6 SA6320A enables engineers to validate demanding wideband and high-frequency systems with deeper signal insights. Key capabilities include:

• Wideband Capture to 8 GHz: Up to 8 GHz analysis bandwidth captures wideband signals, enabling broader signal analysis and reducing workflow complexity.
• Extends High-Frequency Design and Validation: Frequency coverage up to 67 GHz supports next-generation wireless, millimeter-wave, radar, and spectrum operations applications.
• Improved Signal Clarity: Advanced displayed average noise level (DANL), phase noise, and EVM performance reveal low-level spurs, interferers, and wideband impairments.
• Accelerated 5G NR Analysis: Graphics processing unit (GPU)-accelerated demodulation speeds for wide bandwidth 5G NR error vector magnitude (EVM) measurements shortens analysis time.
• Regulatory Compliance with Wide RBW: Up to 80 MHz resolution bandwidth (RBW) supports standards-compliant signal measurements.

The Expert XA5 SA6210A helps R&D, validation, and manufacturing teams accelerate 5G, wireless local area network (WLAN), ultra-wideband, radar, pulsed RF, and general-purpose wireless test workflows. Key capabilities include:

• Accelerates Spur Detection: Fast, image-free swept measurements up to 32 GHz help engineers identify low-level signals and spurious emissions sooner.
• Simplified Validation: Dual-receiver architecture enables 5G NR and WLAN MIMO measurements and cross-correlated error vector magnitude (ccEVM), supporting single-instrument analysis of complex RF interactions.
• Broader Wireless Test Coverage: Up to 2 GHz analysis bandwidth supports advanced 5G, WLAN, radar, and general-purpose validation workflows.
• Greater Measurement Confidence: High RF measurement accuracy helps reduce EVM uncertainty and improve signal characterization.
• Streamlined RF Workflows: A larger display, redesigned user interface, and legacy X-Series SCPI compatibility help teams transition more quickly and efficiently.

Jun Chie, Vice President, Keysight Core Product Management, said: “Wireless design and validation are becoming significantly more challenging as engineers work with wider bandwidths, higher frequencies, and more complex signal environments. The Pro XA6 SA6320A and Expert XA5 SA6210A signal analyzers are built to help engineering teams capture more signal behavior in less time, increase measurement speed, and move from design and debug to validation with greater confidence.”

The post Keysight Introduces RF Signal Analyzers appeared first on ELE Times.

Murata Manufacturing Co., Ltd. announces a new collaboration with Synopsys, Inc., enabling users of Synopsys’ simulation tools to navigate directly to Murata’s website to access and download the latest high-performance simulation models from Murata. The collaboration covers Synopsys’ 3D electromagnetic field analysis tool, Ansys HFSS, and thermal analysis tool Ansys Icepak, and marks a significant step toward streamlining the simulation workflow for electronic circuit designers. Murata is also the first company to offer passive component simulation models via Ansys Icepak.

As demand for high-speed, high-capacity communications continues to grow, electronic circuit design has become increasingly complex. Engineers must now account for a range of physical phenomena, from electromagnetic interference (EMI) to component heat generation, within a single design. Addressing these challenges early in the design process is critical; overlooking them can trigger costly redesigns, extend development timelines, and drive up prototyping expenses. This has placed greater pressure on electronic component suppliers to provide ready-to-use, high-quality simulation models that are compatible with the tools engineers already rely on.

Developing accurate models for electromagnetic and thermal analysis is inherently challenging, as both electromagnetic behavior and temperature distribution shift considerably depending on design conditions. Murata’s vertically integrated approach, spanning raw material development and manufacturing through to final product processing, enables the company to draw on an extensive proprietary dataset, resulting in simulation models that closely reflect real-world component performance.

The models are compatible with Ansys 2026 R1. Ansys HFSS supports electromagnetic field analysis and covers Murata’s RF inductors and multilayer ceramic capacitors (MLCCs), while Ansys Icepak supports thermal analysis and covers Murata’s power inductors.

The post Murata Brings 3D EM and Thermal Simulation Models to Ansys appeared first on ELE Times.

Microchip Technology announces that its Nantes facility in France expands its Qualified Manufacturers List (QML) MIL‑PRF‑38535 certification scope to include QML Class Y, reinforcing the company’s commitment to delivering high‑reliability semiconductor solutions for aerospace and defense applications. The Nantes site expanded its certification scope from QML Classes V and Q to now include Class Y.

Microchip’s Nantes site has maintained QML certification to Classes Q and V since 1999, supporting the most demanding space and defense mission requirements. The addition of Class Y certification advances the facility’s capabilities to include additional packaging technologies, including non‑hermetic solutions, enabling higher levels of integration and supporting more advanced semiconductor architectures required by next‑generation military and space programs. 

“We’re honored to be a leading supplier of semiconductors to the aerospace and defense industry and continue to deliver the quality and reliability our customers depend on for critical missions,” said Patrick Johnson, senior corporate vice president of Microchip’s Aerospace and Defense Group. “Microchip’s products are in most military applications, and in space, we are virtually in everything that leaves Earth.”

With Class Y certification, the Nantes facility strengthens Microchip’s European manufacturing footprint for high‑reliability devices. The site also holds ESCC QML and AS9100:2018 certifications, positioning it among Microchip’s most highly qualified manufacturing locations for aerospace and defense solutions. 

The company’s Nantes facility is equipped to support the qualification and testing of its PIC64 High-Performance Spaceflight Computing (PIC64-HPSC), a series of 64-bit microprocessors (MPUs) that are radiation-hardened and radiation-tolerant for space exploration applications. This capability enhances Microchip’s ability to meet evolving customer requirements for electrical testing, qualification, and long‑term mission assurance in harsh operating environments.

Microchip has worldwide qualification sites in the United States and Europe, each certified to specific military standards and classes aligned with their product focus. In the U.S., the company’s site in San Jose, Calif., is qualified to MIL-PRF-38535 Classes Q, V, and Y, for advanced digital and space applications, while its site in Garden Grove, Calif., supports Class Q for analog and mixed-signal devices. The company’s Lawrence, Mass. facility provides capabilities under MIL-PRF-19500 and MIL-PRF-38534 Classes H and K for discrete and hybrid microelectronics. In Europe, in addition to the Nantes site, Microchip’s facility in Ennis, Ireland, is certified to MIL-PRF-19500 for its discrete manufacturing. These sites ensure consistent high-reliability qualification across regions without reliance on dedicated lab certifications.

Microchip has a broad portfolio of high-reliability solutions designed for the aerospace and defense market, including Radiation-Tolerant (RT) and Radiation-Hardened (RH) MCUs, MPUs, FPGAs, and Ethernet PHYs, power devices, RF products, timing solutions, as well as discrete components from bare die to system modules.

The post Microchip’s Nantes Facility Achieves QML Class Y Certification appeared first on ELE Times.

Reducing Switching Losses and Increasing Efficiency, Devices Combine Low Qrr Down to 105 nC and VF Down to 1.45 V With Low Junction Capacitance, Fast Recovery Time, and Minimum Creepage Distance of 5.4 mm.

Vishay Intertechnology, Inc. expands its Gen 7 platform of 1200 V FRED Pt Hyperfast rectifiers with six new devices in the eSMP series SMPC HV package. Optimized for industrial, automotive, and energy applications, the 1 A, 2 A, and 3 A rectifiers not only offer the best trade-off between reverse recovery charge (Qrr) and forward voltage drop for devices in their class, but also provide the lowest junction capacitance and recovery time.

The Vishay Semiconductors rectifiers release include the VS-E7SX0112-M3V, VS-E7SX0212-M3V, and VS-E7SX0312-M3V, and AEC-Q101 qualified VS-E7SX0112HM3V, VS-E7SX0212HM3V, and VS-E7SX0312HM3V. To reduce switching losses and increase efficiency, the devices combine a fast recovery time of 50 ns with Qrr down to 105 nC typical, forward voltage drop down to 1.45 V, and junction capacitance down to 7.25 pF. The robust rectifiers offer non-repetitive peak surge current up to 70 A in a compact package measuring 4.3 mm x 6.5 mm with a low 1.1 mm profile, which is footprint-compatible with the TO-277A. Combined with a minimum 5.4 mm creepage distance and molding compound with a comparative tracking index (CTI) ≥ 600 (Material Group I), the devices reduce component counts and lower BOM costs based on IEC 60664-1 requirements for high voltage applications.

The VS-E7SX0112-M3V, VS-E7SX0212-M3V, VS-E7SX0312-M3V, VS-E7SX0112HM3V, VS-E7SX0212HM3V, and VS-E7SX0312HM3V will serve as clamp, snubber, and freewheeling diodes in flyback auxiliary power supplies and high-frequency rectifiers for bootstrap driver functionality, while providing desaturation protection for the latest fast-switching IGBTs and high-voltage Si / SiC MOSFETs. Typical applications for the devices include industrial drives and tools, on-board chargers and motors for electric vehicles (EV), energy generation and storage systems, and Ćuk converters and industrial LED SEPIC circuitry.

The rectifiers feature a planar structure and platinum-doped lifetime control that guarantee system reliability and robustness without compromising on performance, while their optimized stored charge and low recovery current minimize switching losses and reduce power dissipation. RoHS-compliant and halogen-free, the devices feature a Moisture Sensitivity Level of 1 in accordance with J-STD-020 and offer high temperature operation to +175 °C.

 

Device Specification Table:

Part #	IF(AV) (A)	VR (V)	VF at IF (V)	trr (ns)	Qrr (nC)	CT (pF)	IFSM (A)	Package	AEC-Q101
VS-E7SX0112-M3V	1	1200	1.45	50	105	7.25	19	SMPC HV	No
VS-E7SX0112HM3V	1		1.45		105	7.25	19		Yes
VS-E7SX0212-M3V	2		1.6		165	9.0	21		No
VS-E7SX0212HM3V	2		1.6		165	9.0	21		Yes
VS-E7SX0312-M3V	3		1.45		240	20	70		No
VS-E7SX0312HM3V	3		1.45		240	20	70		Yes

Samples and production quantities of the new Gen 7 rectifiers are available now, with a lead time of eight weeks.

The post Vishay Intertechnology Releases New 1 A, 2 A, and 3 A Gen 7 1200 V FRED Pt Hyperfast Rectifiers in SMPC HV Package appeared first on ELE Times.

Circuits for converting 4 to 20mA analog current loop signals to 0 to 20mA may be hot topics, but hot implementations of those circuits are not.

Circuit designs for conversion of 4 to 20mA analog current loop signals, which are ubiquitous in process monitoring and control, to 0 to 20mA are a hot topic recently.  “Hot topic” is a perfect description because typical examples of such converters can dissipate half a Watt.  Some cook even hotter than that!  This results in some very un-green complications like TO220 packaged power pass transistors sporting substantial heatsinks.  Would Greta T. approve?  I think not!

Wow the engineering world with your unique design: Design Ideas Submission Guide

The design in Figure 1 offers a cool (and maybe even useful) efficiency improvement.  It thriftily recycles most of the 4 to 20mA input current to generate the 0 to 20mA output while needing only microamps from its own local power supply.  It consumes merely 250uA x 24v = 6mW (typical) and dumps only similar single-digit milliwatts from Q2 (which is the closest thing it has to a pass transistor).  That’s not even enough heat to make a TO92 tepid.

Here’s how it works:

Figure 1 This circuit’s operation is governed by the following equation: Iout = Iin – 4mA(1 – (Iin – 4mA)/16mA))  = 1.25(Iin – 4mA). The maximum current drawn from the local V+ supply is only 1/80th of max Iout, translating to an 80:1 efficiency gain. Asterisked resistors are 0.5% precision or better.

The 4 to 20mA input current (99.95% of it, to be precise) passes through current sense resistor R1 and from there to the load, generating 200mv to 1v as Iin goes from 4 to 20mA.  The voltage to current converter R1+A1+Q1 makes that into Ic1 = Iin R1/R2 = 2uA to 10uA as the input to current to voltage converter R5+A2+Q2+R4, generating 0.5 to 2.5v across R5.  A2 compares this to A3’s 2.50v internal reference, forcing Q2 to conduct so that the sum Vr4 + Vr5 = 2.5v.

Thus Ic2 = (2.5 – Vr5)/R4 and it decreases linearly from 4mA to zero as Iin increases from 4 to 20mA. The net effect is to force Q2 to subtract a linearly decreasing 4 to 0mA from Iin, so that its 4 to 16mA span is corrected to 0 to 20mA in Iout. In other (mathspeak) words:  Iout = Iin – 4mA(1 – (Iin – 4mA)/16mA)) = 1.25(Iin – 4mA)

The payoff is that 98.8% of Iout comes from recycled Iin instead being sucked anew from V+.

V+ isn’t critical and needs only be sufficient to provide the compliance required by the (grounded) load.  R3 needs to provide 50uA bias for the A3pin3 shunt reference, so R3 = (V+ – 2.5)/50uA = 390k for V+ = 24v. Noncritical Z1 provides a few volts of headroom for the transistors.   The total voltage drop from input to output is 5.6v.

Finally, there’s a caveat.  In the event of complete loss of the nominal 4 to 20mA input current, A2 will drive Q2 into saturation.  This won’t damage anything, but will force A2 to draw 5mA from V+ to supply the required Q2 base current.

Stephen Woodward‘s relationship with EDN’s DI column goes back quite a long way. Over 200 submissions have been accepted since his first contribution back in 1974.  They have included best Design Idea of the year in 1974 and 2001.

Related Content

• 4mA-20mA to 0mA-20mA converter’s current mirror drives grounded load
• Full circle current loops: 4mA-20mA to 0mA-20mA
• Active two-way current mirror
• 4/20mA to 0/20mA loop current converter for grounded loads
• Silly simple precision 0/20mA to 4/20mA converter
• Double-duty current loop transmitter

The post 4-20mA to 0-20mA converter sips mere microamps appeared first on EDN.

Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA has signed a letter of intent to receive up to $50m in direct funding under the CHIPS and Science Act from the US Department of Commerce to expand its 6-inch indium phosphide (InP) photonic device manufacturing facility in Sherman, Texas...

Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA has signed a letter of intent to receive up to $50m in direct funding under the CHIPS and Science Act from the US Department of Commerce to expand its 6-inch indium phosphide (InP) photonic device manufacturing facility in Sherman, Texas...

Phlux Technology — which was spun off from the University of Sheffield in 2020 and designs and manufactures 1550nm avalanche photodiode (APD) infrared (IR) sensors — has announced beta-sample availability of the Apex 200µm receiver module, PX02200-TO, for ultra-low-light detection as part of a family of Apex receivers that combine Phlux’s Noiseless InGaAs Aura APD detectors with low-noise, optimized pre-amplifier circuits all integrated in an industry-standard TO-8, 12-pin header package...

Phlux Technology — which was spun off from the University of Sheffield in 2020 and designs and manufactures 1550nm avalanche photodiode (APD) infrared (IR) sensors — has announced beta-sample availability of the Apex 200µm receiver module, PX02200-TO, for ultra-low-light detection as part of a family of Apex receivers that combine Phlux’s Noiseless InGaAs Aura APD detectors with low-noise, optimized pre-amplifier circuits all integrated in an industry-standard TO-8, 12-pin header package...

As quantum technologies move towards commercial deployment, the need to accelerate UK research into scalable, real-world deployment is increasingly critical. In response, the UK’s Compound Semiconductor Applications (CSA) Catapult has appointed as head of quantum, helping to accelerate its focus on key areas including quantum systems, AI hardware, advanced packaging, photonics, RF control, William Waller cryogenic integration and test. These capabilities are central to enabling the next generation of quantum technologies, particularly in quantum communications, quantum sensing and future quantum computing infrastructure, where integration, reliability and scalability will be essential...

As quantum technologies move towards commercial deployment, the need to accelerate UK research into scalable, real-world deployment is increasingly critical. In response, the UK’s Compound Semiconductor Applications (CSA) Catapult has appointed as head of quantum, helping to accelerate its focus on key areas including quantum systems, AI hardware, advanced packaging, photonics, RF control, William Waller cryogenic integration and test. These capabilities are central to enabling the next generation of quantum technologies, particularly in quantum communications, quantum sensing and future quantum computing infrastructure, where integration, reliability and scalability will be essential...

Rohde & Schwarz is driving the commercialization of 5G-based New Radio non-terrestrial networks, with successful certification of the highest number in GCF conformance test cases for NR-NTN to date. The validation covers all three domains, RF, RRM, and PCT.

Following the successful validation of the first 5G-based NR-NTN at the PTCRB (PCS Type Certification Review Board), Rohde & Schwarz continues its efforts to enable validation at the GCF (Global Certification Forum). The validated test cases within GCF WI-555 (Work Item) are defined in accordance with the 3GPP test specifications for RF (Radio Frequency), RRM (Radio Resource Management), and PCT (Protocol Conformance Testing) and were executed with Rohde & Schwarz conformance test solutions.

All measurements were conducted on the R&S TS8980 Conformance Test Platform, the R&S TS-RRM, and the CMX500 in frequency range 1 (FR1), verifying the latest NR-NTN chipset from Samsung as the device under test (DUT).

3GPP conformance testing is essential for ensuring that devices and networks comply with global standards. 5G NR-NTN testing presents challenges that extend beyond those encountered in traditional terrestrial networks, primarily due to the vastly different operating environment and the dynamic nature of satellite-based communication.

At the core of the Rohde & Schwarz conformance test solutions is the CMX500 5G one-box signaling tester, which also supports early research and development through integrated fading and channel emulation, along with an intuitive tool for visualizing satellite constellations – all in a single-box test setup. In addition, the user-friendly R&S CONTEST test system software platform facilitates the seamless execution of 3GPP test cases.

The post Rohde  and Schwarz Leads GCF 3GPP NR-NTN Validation with Record Test Cases appeared first on ELE Times.

After announcing capacity investments last July and October and this February, Tokyo-based JX Advanced Metals Corp is to invest up to ¥120bn more over the next four years to further expand its production capacity of indium phosphide (InP) substrates, used in optical communications transceivers that support the large-volume data transmission required by the advancement of AI...

After announcing capacity investments last July and October and this February, Tokyo-based JX Advanced Metals Corp is to invest up to ¥120bn more over the next four years to further expand its production capacity of indium phosphide (InP) substrates, used in optical communications transceivers that support the large-volume data transmission required by the advancement of AI...

ROHM develops the “AG16xFNxx Series,” a lineup of 80V power MOSFETs designed for 48V power supply systems, which are becoming increasingly common in automotive applications.

In the automotive sector, power demand is increasing, particularly in high-end vehicle models. 48V power supply systems are gaining attention as a highly efficient alternative to conventional 12V power supply systems. With widespread adoption expected around 2030, there is a growing need for 80V power MOSFETs capable of delivering even lower power losses than standard 100V devices.

ROHM’s new products enable downsizing in comparison to standard automotive MOSFET packages such as the TO-252 (6.6 × 10.0mm) by adopting the HPLF5060 (4.9 × 6.0mm) and DFN3333 (3.3 × 3.3mm) packages.

The HPLF5060 features Gull-Wing Leads, while the DFN3333 features Wettable Flank Technology, which contributes to improved reliability on PCBs (Printed Circuit Boards). Furthermore, by adopting Copper Clip Junction Technology to enhance heat dissipation, these devices are capable of handling high currents. All models comply with the automotive reliability standard AEC-Q101, ensuring high reliability.

The product lineup of these packages will be further expanded in the near future. In addition, development of TOLG (TO-Leaded with Gullwing, 9.9 × 11.7mm) packaged products has begun, with continued expansion of the lineup of high-power, high-reliability 80V MOSFETs.

Application Examples

Automotive 48V systems: Main inverter control circuits, electric motors, electric water pumps, etc.

 

The post ROHM Launches AG16xFNxx Series MOSFETs for Automotive 48V Power Supply Systems appeared first on ELE Times.

🔵 День вступника 2026 kpi ср, 06/17/2026 - 11:42