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Поїздка Шевченковими місцями із Профкомом kpi вт, 03/31/2026 - 12:56

КПІшники — серед лідерів з настільного тенісу на XXI Універсіаді kpi вт, 03/31/2026 - 12:51

In a major move to solidify India’s standing as a global high-tech hardware hub, the Union Government has announced a strategic investment of ₹257.77 crore (approximately $31 million) into 128 technology startups.

The announcement, shared by Minister of State for Electronics and IT, Jitin Prasada, in a written reply to the Rajya Sabha on Friday, March 27, 2026, highlights a shift toward “risk capital” for sectors critical to national security and economic self-reliance.

The “Fund of Funds” Mechanism

The investment was executed through the Electronics Development Fund (EDF), which operates under a “Fund of Funds” model. Instead of direct equity, the EDF acts as an anchor investor in eight professionally managed “Daughter Funds” (early-stage venture and angel funds).

These Daughter Funds have leveraged the government’s initial contribution to mobilise a total of ₹1,335.77 crore in follow-on investments for startups specialising in:

• Semiconductor Design & Nano-electronics

• Cybersecurity & AI/ML

• Robotics & IoT

• Medical Electronics (HealthTech)

Impact by the Numbers

As of late February 2026, the ripple effect of this capital injection has already yielded significant socio-economic returns:

• Job Creation: Over 22,700 high-skilled jobs have been generated within the supported startups.

• Intellectual Property: The companies have successfully filed or acquired more than 300 IPs, reinforcing India’s domestic design capabilities.

• Profitable Exits: The government has already realised ₹173.88 crore from 37 successful exits, proving that DeepTech ventures are becoming increasingly viable for investors.

Geographic Distribution: Bangalore Leads the Charge

While the government aims for pan-India growth, the current investment data shows a strong concentration in existing tech corridors. Bangalore remains the undisputed leader, housing 88 of the 128 funded startups.

A Strategic Pivot Toward Self-Reliance

This news comes on the heels of the Ministry of Electronics and IT (MeitY) approving 29 additional projects under the Electronics Component Manufacturing Scheme, involving a cumulative investment of ₹7,104 crore.

By focusing on the “Daughter Fund” model, the government ensures that capital is managed by industry experts while maintaining a minority stake—a move designed to encourage private venture capital to take more “brave” bets on hardware and indigenous R&D rather than just consumer-facing software apps.

“The goal is to build a self-sustaining electronics ecosystem,” stated the Ministry. “We aren’t just looking for the next ‘unicorn’; we are looking for the next breakthrough in Indian-owned IP.”

By: Shreya Bansal, Sub-Editor

The post Govt Infuses ₹258 Crore Into 128 Startups to Drive DeepTech and IP Creation appeared first on ELE Times.

КПІ ім. Ігоря Сікорського зберігає сильні позиції в рейтингу QS World University Rankings by Subject 2026 kpi вт, 03/31/2026 - 11:42

Голос "Академіка Вернадського" чуємо завдяки випускникові КПІ Інформація КП вт, 03/31/2026 - 11:29

As the global transition toward industrial automation and smart living accelerates, the security and processing efficiency of microcontrollers (MCUs) have become decisive factors for enterprises’ success in the business-to-business market. Nuvoton Technology has announced the launch of its new NuMicro M3331 series 32-bit microcontroller. Powered by the Arm Cortex-M33 core, the M3331 series delivers exceptional performance at operating frequencies of up to 180 MHz and integrates TrustZone technology, providing a robust hardware foundation for industrial control, smart factories, smart buildings, and renewable energy.

The M3331 series is more than just a hardware platform; it is an integrated solution designed to address the challenges customers face when processing complex control algorithms and protecting intellectual property (IP). Featuring the Cortex-M33 core with built-in DSP instruction set and a single-precision floating point unit (FPU), it runs up to 180 MHz. The M3331 series is built with comprehensive security mechanisms. Through hardware-level Secure Boot, it ensures that the system executes only certified and authorised firmware from startup, establishing an immutable root of trust. To protect core IP assets, it features eXecute-Only-Memory (XOM) to safeguard core algorithms and eliminate the risk of code leakage. Additionally, the TrustZone technology partitions a secure execution environment to effectively defend against malicious attacks.

Designed for reliability, the M3331 series supports a wide operating temperature range from -40°C to +105°C and exhibits superior interference resistance (ESD HBM 4 kV / EFT 4.4 kV), significantly reducing the risk of downtime caused by environmental factors. To further enhance system reliability, the 512 KB Flash memory supports Error Correction Code (ECC) for detecting and repairing bit-flip errors. Furthermore, within the 320 KB SRAM, a hardware parity check is provided for the 64 KB core area, achieving true industrial-grade system resilience.

To meet the diverse communication demands of the IoT era, the M3331 series introduces an I3C interface and two CAN FD controllers, greatly increasing data throughput between sensors and control nodes. For high-speed peripherals and mass storage, it includes a built-in USB 2.0 High-Speed OTG controller (with on-chip PHY) and an SDH (Secure Digital Host Controller) interface, delivering exceptional performance for both gaming products requiring low-latency transmission and smart consumer devices needing high-bandwidth storage.

Moreover, the M3331 series features a 12-bit ADC with a sampling rate of up to 4.2 Msps, accurately capturing subtle changes in analogue signals. With up to 48 PWM outputs, it provides precise control solutions for professional photography lighting and stage lighting. Specifically, the series is equipped with ELLSI (Enhanced LED Light Strip Interface) and up to 10 LLSI (LED Light Strip Interface) interfaces, supporting next-generation gaming ARGB LED control protocols. This offloads the CPU and reduces development difficulty, enabling brilliant and fluid dynamic LED effects. The M3331 series offers a variety of package options, from the compact QFN 33 (4×4 mm) to the high-pin-count LQFP 128 (14×14 mm), helping customers optimise their PCB layouts.

To accelerate time-to-market, Nuvoton provides NuMaker-M3333KI and NuMaker-M3334KI evaluation boards, along with full support for mainstream RTOS (FreeRTOS, Zephyr, RT-Thread) and GUI libraries (emWin, LVGL). This ecosystem empowers customers to build stable system solutions rapidly.

The M3331 series consists of two subseries: the M3333 series (without USB 2.0 support) and the M3334 series (with USB 2.0 support).

The post Nuvoton Launches Upgraded Driving Smart Device, NuMicro M3331 Series MCU appeared first on ELE Times.

Toshiba Corp of Kawasaki, Japan has signed a memorandum of understanding (MoU) to start discussions regarding a business integration of the semiconductor business of its subsidiary Toshiba Electronic Devices & Storage Corp (TDSC), the semiconductor business of ROHM Co Ltd, and the power device business of Mitsubishi Electric Corp. The MoU was signed with Japan Industrial Partners Inc (JIP), TBJ Holdings Corp (TBJH), ROHM, and Mitsubishi Electric...

I have a brass annealer project and thought that it will be easy to make with protoboard. it was not, at least not for me. The welder tip was too large and there are bad joints everywhere. well, if it works🤷 submitted by /u/rcplaner [link] [comments]

How easy is it to analyze and optimize how much power the device connected to a smart plug is drawing? The answer depends in part on which hardware and firmware version you’re running.

Next up in my ongoing TP-Link smart home device ecosystem series of hands-on evaluations and teardowns:

• Tapo or Kasa: Which TP-Link ecosystem best suits ya?
• TP-Link’s Kasa HS103: A smart plug with solid network connectivity
• TP-Link’s Kasa EP10: If at first it doesn’t connect, buy, buy again

is the EP25 smart plug, which builds on the EP10 foundation with two feature set additions: Apple HomeKit (and Siri, for that matter) support, along with energy monitoring capabilities.

I bought a two-pack (with an associated “P2” product name suffix) from Amazon’s Resale (formerly Warehouse) sub-site for $13.29 plus tax during a 30%-off promotion last November. They also come in an “EP25P4” four-pack version. I’ll start with some stock photos:

An uncertain lineage

Although I’ve identified the EP25 as the enhanced sibling of the EP10, particularly referencing the naming-format commonality, those of you who’ve already analyzed the above graphic with device dimensions (not to mention the side switch location) might understandably be confused. Doesn’t it look more like the earlier, beefier, HS103? Indeed, it does. Here it is below the EP10:

And now underneath the HS103:

Perhaps the larger chassis was necessary to fit the additional feature-implementing circuitry? There’s one way to find out for sure; take it apart. So, let’s start, as usual with some box shots, as usual accompanied by a 0.75″ (19.1 mm) diameter U.S. penny for size comparison purposes:

This isn’t what the box backside originally looked like, actually:

When it arrived, there was a barcode-inclusive sticker stuck to it, as is typical with products that cycle back through the Amazon Resale sub-site after initial sale-then-customer return:

But stuck to it was something I’d not experienced before: another sticker, with a smaller black rectangle near its center:

I had a sneaking suspicion that I’d find a RFID or other tracking tag on the other side. I was right:

Continuing around the outer package sides:

Packaging assault

Judging from the already-severed clear tape on the bottom of the box, in contrast to the still-intact tape holding the top flap in place, I assumed the original owner got inside through the bottom-end pathway:

Yup. I don’t know what surprises me more (and I’ve also seen it plenty of times before): how brutishly some folks mangle the various packaging piece(s) to get to the device(s) inside, or that they still have the impudence to return the goods for refund afterwards. Now to cut the top’s transparent tape and try out the alternative entry path:

At least the original owner was thoughtful enough to put the sliver of quick-install literature back in the box prior to returning. Although, on second thought, he or she probably never even got to it before sending everything back. There was also this, reflective of its Apple protocol-friendliness:

You also may have already noticed in the earlier bottom-view open-box shot that one of the devices inside was still encased by a protective translucent sleeve, while that of the other device was missing. I went with the latter as my teardown victim, operating under the theory that its still-plastic-covered sibling was unused and therefore most likely to still be functional for future hands-on evaluation coverage purposes. Here’s our patient:

Monitoring implementation variability

This last shot of the underside of the device:

Specifically, this closeup of the specs, including the all-important FCC ID (2AXJ4KP125M):

is as good a time as any to explain the background to my “The answer depends in part on which hardware and firmware version you’re running” comment in this post’s subtitle. Note the following lines of prose on the product support pages for the EP25P2 and EP25P4:

Vx.0=Vx.6/Vx.8 (eg:V1.0=V1.6/V1.8)
Vx.x0=Vx.x6/Vx.x8 (eg:V1.20=V1.26/V1.28)
Vx.30=Vx.32 (eg:V3.30=V3.32)

I’d mentioned in the prior teardown in this series that TP-Link tends to cycle through numerous hardware revisions throughout a product’s life, with each hardware iteration accompanied by multiple firmware versions, and the cadence combination resulting in inconsistent functionality (said another way: bugs). The EP25 is no exception to this general rule. That said, “inconsistent functionality” seemingly is particularly notable in this product case (grammatical tweaks by yours truly):

On Amazon, I bought a 2-unit box set of the EP25P2 (“Hardware 2.6” in the Kasa app), and a 4-unit box of the EP25P4 (“Hardware 1.0” in the Kasa app). They market them as the exact same product, but the EP25P2 has much better energy and power consumption data and graphs, and a cost tool. The other just has a crude power read out. It seems like something they should’ve been clear about, and like something they could fix in the app software. I’m annoyed they did this and will return the EP25P4.

FWIW, looking back both at the device bottom closeup and the earlier bottom box shot, I’m guessing “US/2.6” references hardware v2.6. Again: . Curiously, the four-pack (EP25P4) support page lists three hardware versions (V1.60, V1.80 and V2.60), albeit not the V1.0 h/w mentioned in the earlier Reddit post…and the two-pack (EP25P2) page mentions only V2.60.

Unto the breach, dear friends

Time to delve inside. The case-disassembly methodology was unsurprisingly identical to that for the earlier HS103, so in the interest of brevity I’ll spare you another iteration of the full image suite of steps. See the earlier teardown for ‘em; here’s today’s teardown subset. One upside this second time around: no blood loss by yours truly!

As before, I ‘spect this is the assembly subset that you’re all most interested in:

once again based on (among other things) a Hongfa HF32FV-16 relay (the tan rectangular “box” at far right). Multiple products, along with multiple hardware versions for each, may evolve in a general sense, but some things stay the same…

Detailing the “smarts”

And specifically, here’s the “action” end:

From this side, the embedded antenna is visible; the PCB is otherwise bare:

You can see the antenna from the other side, too, plus a more broadly interesting presentation:

The PCB “lay of the land” is reminiscent of that inside February’s HS103, including the respective switch and LED locations:

This time, however, the prior design’s Realtek RTL8710 has been upgraded to the dual-core RTL8720 (PDF), whose beefier processing “chops” are presumably helpful for implementing the added energy monitoring and HomeKit protocol capabilities, as well as with expanded internal RAM and (optional integrated) flash memory. In this particular design, however, the flash memory is external, taking the form of an Eon Silicon Solution EN25Q32B 32 Mbit SPI serial device. It’s in the upper right corner of the PCB, next to the LED and occupying one of the IC sites you might have already noticed was unpopulated in the HS103 implementation. The other previously unpopulated IC site, below the EN25QH32B, now houses a Shanghei Belling BL0937 (PDF) single-phase energy monitoring IC. Eureka!

Tying up loose ends

As with its TP-Link (but not more amenable Amazon) smart plug predecessors, I was unable to wedge the EP25’s PCB away from the rear half of its enclosure, so there’ll be no circuit board backside photos for you…from me, at least. Alternatively, you can always check out the ones published by the FCC. If you do, you may walk away amazed (as I was) by the total area dominance by multiple large globs of solder.

In closing, I thought I’d share a somewhat related video I found while doing my research. It’s a review of the HS110, the energy monitoring variant of TP-Link’s original HS100 smart plug that I tore down nine years back:

As those Virginia Slims commercials used to say, “You’ve come a long way.” And with that, I’ll turn it over to you for your thoughts in the comments!

—Brian Dipert is the Principal at Sierra Media and a former technical editor at EDN Magazine, where he still regularly contributes as a freelancer.

Related Content

• Tapo or Kasa: Which TP-Link ecosystem best suits ya?
• TP-Link’s Kasa HS103: A smart plug with solid network connectivity
• TP-Link’s Kasa EP10: If at first it doesn’t connect, buy, buy again

The post TP-Link’s Kasa EP25: Energy monitoring for a hoped-for utility bill nose-dive appeared first on EDN.

NXP’s TEF8388 RF CMOS automotive radar transceiver supports Level 2+ and Level 3 ADAS, with a roadmap toward higher levels of automation. Operating in the 76- to 81-GHz FMCW radar band, it provides 8 transmitters and 8 receivers (8T8R), scalable to 32T32R configurations for both entry-level and high-performance systems. Paired with NXP radar processors, it forms an imaging radar platform that addresses diverse performance, cost, and regulatory requirements across global markets.

The TEF8388 delivers strong RF performance—14 dBm Pout and 12 dB NF—while keeping power consumption comparable to less integrated 3T4R devices. An on-chip M7 core provides flexible chirp programming, calibration, and functional safety management.

Occupying a 16×16-mm footprint, the TEF8388 uses an optimized pin layout and strategic launcher placement to enhance channel isolation and signal quality. It meets AEC-Q100 and ISO 26262 SEooC ASIL B requirements and operates over a junction temperature range of –40 °C to +150 °C.

Development support for lead customers is available now. Mass-market support will follow later in 2026. 

TEF8388 product page 

NXP Semiconductors 

The post Radar transceiver scales for automated driving appeared first on EDN.

A half-wave LLC (HWLLC) platform from Renesas includes four controller ICs rated for up to 500 W for high-speed chargers. The HWLLC AC/DC converter topology scales from 100 W to 500 W, enabling chargers for power tools, e-bikes, and other appliances without the size, heat, and efficiency penalties of legacy topologies.

Combined in a 240-W USB EPR power adapter design, the HWLLC approach achieves a power density of 3 W/cm³ and 96.5% peak efficiency—described as the industry’s highest power density. The 500-W envelope broadens application range, while USB-C EPR capability enables a move beyond 100-W charging.

At the heart of the lineup is the RRW11011, an AC/DC primary-side digital controller with interleaved PFC and HWLLC operation. It delivers a wide 5-V to 48-V output for USB 3.1/3.2 EPR and other variable-load charging systems. The boost PFC stage minimizes ripple, total harmonic distortion, and EMI, while digital two-stage control enhances efficiency and reduces audible noise.

The platform also includes the RRW30120 USB PD 3.2 EPR controller with secondary-side regulation, the RRW40120 600-V half-bridge gate driver optimized for SuperGaN FETs and MOSFETs, and the RRW43110 synchronous rectifier controller.

The RRW11011, RRW30120, RRW40120, and RRW43110 are now in production, and samples are available for evaluation.

Renesas Electronics 

The post HWLLC topology pushes fast charging to 500 W appeared first on EDN.

QSiC Dual3 1200-V half-bridge MOSFET modules from SemiQ address the efficiency and thermal demands of liquid-cooled AI data centers. Two of the series’ six devices offer an RDS(on) of just 1 mΩ and achieve a power density of 240 W/in.3 in a 62×152-mm package. The modules are available with or without a parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.

QSiC Dual3 is designed to replace silicon IGBT modules with minimal redesign, reducing both size and weight while maintaining efficiency. All SiC MOSFET die are screened using wafer-level gate-oxide burn-in tests exceeding 1350 V. The modules also feature low junction-to-case thermal resistance, enabling the use of smaller, lighter heatsinks.

The Dual3 lineup includes the following part numbers:

Rated for junction temperatures from −40°C to +175°C, the QSiC modules are also suited for grid converters in energy storage systems, industrial motor drives, uninterruptible power supplies, and EV applications.

Learn more about the QSiC Dual3 modules here.

SemiQ

The post SiC modules raise power density for AI servers appeared first on EDN.

The SAM9X75D5M from Microchip is a hybrid SiP for automotive HMI applications, integrating an 800‑MHz ARM926EJ‑S 32‑bit processor with 512 Mbits of DDR2 SDRAM. The package also includes a 24‑bit LCD controller supporting displays up to 10 in. with XGA resolution (1024×768), simplifying high-performance graphical interfaces.

This hybrid SiP combines MPU-class processing with high-density memory in a single package, reducing PCB complexity while maintaining MCU-style development workflows. For automotive and e-mobility HMIs, it offers real-time OS support and flexible display and camera interfaces, including MIPI DSI, LVDS, RGB, MIPI CSI, and 12-bit parallel I/F.

AEC-Q100 Grade 2 qualified, the SAM9X75D5M provides CAN FD, USB, and Gigabit Ethernet connectivity with Time-Sensitive Networking (TSN) capability. It also integrates 2D graphics, audio, and advanced security functions.

The device comes in a 243‑ball BGA package (part number SAM9X75D5M‑V/4TBVAO) and is priced at $9.12 each in 5000‑unit quantities. Variants with 1 Gbit and 2 Gbits of memory are now sampling.

SAM9X75D5M product page 

Microchip Technology 

The post Automotive HMI SiP packs MPU and DDR2 memory appeared first on EDN.

Semtech’s TDS5311P circuit protection device delivers near-constant clamping voltage for 48-V USB PD EPR applications. A member of the SurgeSwitch family, it protects a single voltage bus or data line operating at up to 53 V in devices and systems requiring industrial-grade reliability.

Unlike conventional TVS diodes, the TDS5311P uses a surge-rated FET as the main electrical overstress (EOS) protection element. It maintains a nearly constant clamping voltage from the first microsecond of a surge event through the maximum rated current across the full −40°C to +125°C industrial temperature range.

The TDS5311P is rated for transient current up to 24 A (8/20 µs) and peak pulse power of 1512 W (8/20 µs). It meets the IEC 61000-4-5 industrial surge standard of ±1 kV (RS = 42 Ω, CS = 0.5 µF), as well as IEC 61000-4-2 ESD withstand levels of ±20 kV (contact) and ±25 kV (air). Typical clamping voltage is 60 V at 24 A (8/20 µs).

Housed in a 2.0×2.0-mm, 6-pin DFN package, the TDS5311P conserves PCB area compared with SMAJ and SMAB packages. Supplied on tape and reel in 3000-unit quantities, the device costs $0.38256 each ($1147.68 per reel).

TDS5311P product page 

Semtech

The post FET-based clamp protects 48-V USB PD EPR lines appeared first on EDN.

Deepak Shankar, founder of Mirabilis Design and developer of VisualSim Architect platform for chip and system designs, has created this cartoon for electronics design engineers.

The post The system architect’s sketchbook: Inside the simulation appeared first on EDN.

In a significant move to fortify India’s position as a global electronics hub, the Ministry of Electronics and IT (Meity) has approved 29 new applications under its flagship component manufacturing scheme.

The announcement, made on Monday by IT Secretary S. Krishnan, marks a substantial expansion of the nation’s industrial capacity. The newly sanctioned projects represent a cumulative investment of ₹7,104 crore, signalling robust private sector confidence in the government’s “Make in India” initiatives.

Economic Impact and Job Creation

The scale of the approved projects is expected to ripple through the domestic economy. According to Secretary Krishnan, the fresh wave of investment is projected to:

• Generate 14,246 new jobs directly within the electronics manufacturing segment.

• Yield a production value of ₹84,515 crore, significantly reducing reliance on imported sub-assemblies and parts.

Strengthening the Supply Chain

This latest round of approvals brings the total number of sanctioned projects under the Meity scheme to 75. By focusing specifically on components—the building blocks of smartphones, computers, and automotive electronics—the government aims to move beyond simple assembly and build a more resilient, end-to-end domestic ecosystem.

“The approval of these 29 applications underscores our commitment to deepening the electronics value chain in India,” a senior official noted, highlighting that the move is a strategic step toward the country’s goal of reaching a $300 billion electronics production target by 2026.

The scheme continues to be a cornerstone of India’s strategy to compete with regional manufacturing giants, providing the necessary fiscal support to offset the high costs of setting up sophisticated component units.

The post India Boosts Tech Manufacturing: Government Approves 29 New Electronics Component Projects Worth ₹7,100 Crore appeared first on ELE Times.

Формування компетенцій у сфері адитивного виробництва: досвід міжнародного співробітництва у проєкті ADMiRE Інформація КП пн, 03/30/2026 - 15:17

The EXPRESS program, a five-year, £10.4m UK Engineering and Physical Sciences Research Council (EPSRC)-funded project led by the University of Warwick and University of Southampton, is to support the development of next-generation transistor and optoelectronic devices...

STMicroelectronics has announced the expansion of its 800 VDC power conversion portfolio with two new advanced architectures: 800 VDC to 12V and 800 VDC to 6V. Developed according to the NVIDIA 800 VDC reference design, these new power conversion stages complement the previously introduced 800 VDC to 50V solution. The rapidly emerging 800 VDC data centre architecture enables higher energy efficiency, reduces power losses, and supports more scalable, high compute density infrastructure for hyperscalers and AI compute.

“As AI infrastructure compute scale continues to expand fast, it requires higher voltage distribution and greater density, which can only be achieved with system-level innovation for each of the different AI server form factors,” said Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors Group Head of STMicroelectronics’ Strategy, System Research and Applications, Innovation Office at STMicroelectronics. “With these new converters for 800 VDC power distribution, ST brings a complete set of solutions to support the deployment of gigawatt-scale compute infrastructure with more efficient, scalable, and sustainable power architectures.”

A complete 800 VDC ecosystem for the different AI server form factors

The expansion to 12V and 6V output stages reflects the industry move toward different server architectures requiring different power delivery topologies depending on GPU generation, server height, form factor, and thermal envelope for large-scale training clusters, inference farms, and high-density AI infrastructures. The 50V, 12V, and 6V intermediate DC buses will all coexist in AI data centres depending on rack density, GPU configuration, and cooling strategy.

The new 800 VDC to 12V converter enables high-efficiency distribution from rack-level power shelves directly to the voltage domains that feed advanced AI accelerators.

The new 800 VDC to 6V path allows OEMs to reduce the number of conversion stages and move the 6V bus closer to the GPU. This reduces copper usage, minimises resistive losses, and improves transient performance, a critical differentiator for large-scale training clusters.

Back in October 2025, STMicroelectronics introduced a fully integrated prototype power‑delivery system showcasing a compact GaN‑based LLC converter operating directly from 800 V at 1 MHz with over 98% efficiency and exceptional power density in a smartphone‑sized footprint exceeding 2,600 W/in³ at 50 V.

The three solutions combine ST technologies across power semiconductors (silicon, SiC, GaN), analogue and mixed-signal, and microcontrollers.

Technical highlights of the new 12V and 6V architectures

Direct 800 VDC to 12V high-efficiency conversion:

• Eliminates the traditional 54V intermediate stage, reducing conversion steps and system-level losses.
• Enables higher rack-level efficiency, lower copper usage, and simplified integration for future GPU generations.
• Includes a newly developed high-density power delivery board (PDB) achieving efficiency targets exceeding the sum of the previous two-stage conversion paths.

800 VDC to 6V architecture for GPU-nearing conversion:

• Is designed for system builders who require power stages closer to the GPU, minimising IR drop and improving response under fast load transients.
• Completes the topology portfolio for servers with ultra-dense GPU configurations.

The post STMicroelectronics expands 800 VDC AI datacenter power conversion portfolio with new 12V and 6V architectures in collaboration with NVIDIA appeared first on ELE Times.