Збирач потоків

Huawei’s new chip design and how it aims to bypass Moore’s Law amid a lack of access to the latest EUV lithography is now the talk of the tech town. At the heart of this semiconductor breakthrough is 3D stacking—which Huawei calls LogicFolding—alongside aggressive use of hybrid bonding technology. Huawei’s He Tingbo recently presented details of this 1.4 nm chip—to be released in 2031—at an industry event in Shanghai, China.

Read the full story at EDN’s sister publication, EE Times.

The post A closer look at Huawei’s chip design workaround without EUV appeared first on EDN.

DefTech Bharat successfully concluded its 2026 edition in Bengaluru, reaffirming its position as one of India’s emerging platforms for aerospace, defence, and space technology collaboration. Held from May 20–22, 2026, at the Karnataka Trade Promotion Organisation (KTPO), Whitefield, the exhibition and conference attracted strong participation from defence manufacturers, technology developers, government stakeholders, startups, research institutions, and international delegations.

According to the organisers, the exhibition featured over 200 exhibitors from India and more than 12 countries, showcasing advanced technologies and next-generation solutions across air, land, sea, cyber, and space domains. The event also saw participation from more than 15,000 business visitors, including procurement officials, defence personnel, OEMs, system integrators, engineers, and policymakers.

The co-located DEFTECH Conference brought together industry leaders, technology experts, and government representatives for strategic discussions on indigenous defence manufacturing, AI-enabled warfare systems, aerospace innovation, cybersecurity, advanced electronics, and C4ISR technologies. More than 20 conference sessions and technical seminars were organised during the three-day event, focusing on technology collaboration, innovation pathways, and future battlefield requirements.

A major highlight of DEFTECH Bharat 2026 was the extensive display of cutting-edge technologies including autonomous and unmanned systems, UAVs and counter-drone solutions, AI-driven surveillance platforms, defence electronics, rugged embedded systems, aerospace subsystems, secure communication technologies, radar and sensor systems, additive manufacturing, semiconductor solutions, cyber defence technologies, and advanced manufacturing equipment. Live demonstrations and interactive technology showcases generated strong interest among both domestic and international visitors.

The exhibition also served as a strong networking and business development platform, enabling direct interaction between OEMs, MSMEs, startups, R&D organisations, armed forces representatives, and global technology providers. Several exhibitors reported high-quality business enquiries and strategic partnership discussions during the event.

Building on the strong response to the 2026 edition, the organisers announced that the next edition of DEFTECH Bharat will be held from May 19–21, 2027, at the Bangalore International Exhibition Centre (BIEC), Bengaluru. The move to the larger BIEC venue comes in response to increasing exhibitor demand and rising visitor participation. The exhibition area for the 2027 edition is expected to expand significantly to accommodate a broader range of aerospace, defence, homeland security, and space technology exhibitors.

With India accelerating its focus on indigenous defence production and technology-led modernisation under the Atmanirbhar Bharat initiative, DEFTECH Bharat continues to evolve as an important industry platform connecting innovation, manufacturing, research, and strategic capability development for the future defence ecosystem.

The post DEFTECH Bharat 2026 Concludes Successfully, Sets Stage for Expanded 2027 Edition at BIEC appeared first on ELE Times.

Simple circuit ratios sensor capacitance to reference capacitor to measure micrometers.

It’s hard to imagine a simpler electromechanical sensor than the capacitance type, consisting of little more than two plates (or even just one if the sensed target is conductive) separated by a dielectric (e.g. air).  Sensor capacitance is approximately: C = 8.854pF S/d where S = area of the plates and d = their separation (both in meters).  C then becomes a sensitive readout of plate separation.

Wow the engineering world with your unique design: Design Ideas Submission Guide

Here’s a plausible example. With 38mm diameter circular plates and initial separation of 1mm, you get a nominal capacitance of C = 8.854pF * 0.0382 * pi / 4 / 0.001 = 10pF.  C would span 3.3pF at d = 3mm to 33pF at d = 0.3mm which, with a little math, can be converted into the distance between the plates.  But how to measure C?

For that, we’ll need an interface circuit.  The one in Figure 1 is a suitably simple match for the simplicity of the capacitive sensor itself, consisting of just 8 inexpensive off-the-shelf (OTS) parts.  Here’s how it works.

Figure 1 U1a and U1b cross-coupled Schmidt trigger timers form a ~1MHz RC multivibrator. For the example sensor dimensions and parts values, Output duty factor = x = Out / 5V = d/(d + 1mm). Therefore d = x/(1 – x)

U1a and U2a form an RC timer with a time constant equal to R1Csense while U1b and U2b do the same job for R2Cref.  Cross coupling them as shown in Figure 1 creates a square wave oscillator whose ~1MHz cycle on U1 pin 3 consists of dwelling at +V for Tref = 50ksec Cref = 500ns and at zero for Tsense = 50ksec Csense = 500ns / d where d, as earlier, is measured in mm. 

Thus, the Output duty factor “x” = Tref / (Tref + Tsense) = 500ns / (500ns + 500ns / d) = 1/(1 + 1/d) = d/(d + 1). Starting from x = d/(d + 1), a bit of rearranging yields x(d + 1) = d, then xd + x = d, x = d(1 – x), and finally d = x/(1 – x).  Figure 2 shows how this math performs when the Out signal is fed into a 12bit ADC.

Figure 2 This graph shows sensor performance when Out is connected to a 12bit ADC using +5V for its reference. The black curve (left axis) = plate separation (d) in millimeters, while the red curve (right axis) = ADC least significant bit (LSB) resolution in micrometers.  Note that the resolution is close to 0.1% (d/1000) over much of the range.

Details of circuit operation include the inherent matching and tracking of U1’s gates simply because they share the same chip, and of accurate duty factor digitization if the connected ADC uses +5V as its reference voltage.  Asterisked parts (R1, R2, and Cref) are precision types.  Stray wiring and layout capacitances should be scrupulously minimized.

If there’s a chance the sensor plates might come into contact and short out, then it’s a good idea to protect U2 with a series capacitor.  0.1uF (from the same bag as C1 and C2) will work well and be sufficiently larger than Csense such that its precision and stability (or lack of thereof) won’t matter.  I’d also put another one in series with Cref, although it’s not strictly necessary, just so things look more balanced.

If your application needs position sensing in two dimensions (e.g. an XY stage), the other halves of  U1 and U2 are ready and willing, which helps to keep things capaciously and suitably simple!

Stephen Woodward‘s relationship with EDN’s DI column goes back quite a long way. Over 200 submissions have been accepted since his first contribution back in 1974.  They have included best Design Idea of the year in 1974 and 2001.

Related Content

• Capacitor matchmaker
• CMOS flip-flop used “off label” implements precision capacitance sensor
• From gap to signal: Non-contact capacitive displacement sensors
• Simple circuit interfaces differential capacitance sensor
• The sensor parade at CES 2025

The post ~0.1% resolution capacitive position sensor appeared first on EDN.

New gallium nitride (GaN)-based power semiconductors from STMicroelectronics of Geneva, Switzerland are designed to improve efficiency and increase power density in high-voltage power supplies for high-demand applications that support electrification. The 700V PowerGaN devices in the STPOWER portfolio address challenges such as rising AI server power consumption and the need for higher-performance power conversion beyond the limits of conventional silicon technologies...

Наукова спадщина професора Валентина Чермалиха Інформація КП ср, 05/27/2026 - 13:00

💡Запрошуємо на онлайн воркшоп-вебінар, присвячений розвитку ерготерапії та сучасної системи реабілітації в Україні kpi ср, 05/27/2026 - 12:05

ST announces Zephyr 4.4.0 is adding support for the STM32C5, STM32H5E/F, STM32U3C5, as well as the X-NUCLEO-IKS5A1 daughter board, the EVKITST87M01-1 evaluation kit, and the ST B-DSI-MB1314 touch-sensitive display, among many other things, such as sensors and modems (ST87M01). It’s a testament to the collaboration between ST and the Zephyr community. Over the years, ST prevail drivers, optimize performance, and supports new features. And while we do have partners who use Zephyr and benefit from these contributions, this also stems from our desire to work with open-source projects that help democratize real-time operating systems and lower the barrier to entry.

The ST software ecosystem, encompassing the STM32Cube suite and tools like MEMS Studio, provides engineers with low-level device access and accessible machine learning capabilities. Through utilities such as NanoEdge AI Studio, the company facilitates edge AI development and optimizes hardware accessibility for a broad user base. For more insights, visit the ST Blog.

STM32Cube Ecosystem and the other ST software that grant developers low-level access to devices, such as MEMS Studio, which makes machine learning on sensors even more approachable. For many, tools like STM32CubeProgrammer help make the hardware more accessible, while ST’s software packages for its microcontrollers, microprocessors, sensors, and more provide drivers, middleware, example code, and more. Recently, utilities like NanoEdge AI Studio help programmers and software engineers work on neural networks and optimize their AI applications at the edge, thanks to features like synthetic data generation.

The Zephyr project provides a necessary, agnostic system for organizations managing diverse hardware, offering a unified abstraction layer that enhances portability and interoperability for complex, multi-vendor projects. By utilizing this open-source platform, developers can establish a flexible foundation for building proprietary subsystems and avoid vendor-specific lock-in. You can read the full analysis at ST’s official website.

The importance of the collaboration between ST and Zephyr

ST contributes to the Zephyr project and supports its low-level APIs. Concretely, it means we work with Zephyr to support numerous peripherals and interfaces, including USB modules, LCD-TFT display controllers, networking interfaces, and much more. Since the beginning of the Zephyr project, ST engineers have contributed to the Zephyr codebase and the support community. In certain instances, we even help with critical technologies, such as low-power modes, recognizing that our contribution will benefit more than just the engineers using our products. Another aspect of ST’s work on the Zephyr project is the significant effort that involves reviewing community contributions to the STM32 codebase. It may include new board support, bug fixes, and even complete drivers pushed and maintained by external contributors. Over time, these contributions have been responsible for a significant part of the STM32’s current status.

New MCU Support

The STM32N6 Discovery Kit with a CMOS sensor running a person detection application. Zephyr 4.4.0 is a good example of dedication to the project. Similar to frequent updates to STM32CubeProgrammer bringing new STM32 MCU support, this new version of Zephyr adds support for the STM32C5, STM32H5E/F, the STM32U3C5, and the STM32WBA2X. In some instances, like the STM32C5, this version adds support for DMA, I2C, SPI, ADC, timers, and watchdog. Since we just launched the STM32C5, Zephyr 4.4.0 is an inaugural release for the new series. For other devices in an existing series, the MCU support builds on what is already in place, enabling developers to leverage new part numbers.

New Middleware Features

Beyond the device itself, ST also brings updates to its drivers or middleware. For instance, among many improvements, v4.4.0 brings performance enhancements on STM32, adds RTIO and optimizes DMA in SPI STM32 drivers, and adds a stream API for ADC STM32 drivers. We also added the ability to inject ADC channels to enable immediate execution, overriding the regular sequence. Similarly, Zephyr 4.4.0 adds a portable API to read the one-time programmable non-volatile memory on STM32 MCUs. Usually, that means an ADC sensor can now access calibration data. We are also starting to make our I3C interfaces available on our STM32MP2 MPU, and we have moved our USB default stack to a newer and more robust version.

 

 

The post Zephyr 4.4.0 Collaboration with STMicroelectronics Boosts the Entire Industry appeared first on ELE Times.

submitted by /u/dealer-products [link] [comments]

At PCIM Europe 2026 in Nuremberg, Infineon Technologies AG showcases its comprehensive semiconductor portfolio for future-proof power infrastructure, AI data centers, robotics, and electromobility. The company presents a broad range of power system solutions spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) semiconductors, with support of software, tools, and cybersecurity expertise.

Infineon’s PCIM 2026 demo highlights:

• Making power infrastructure future-proof: As renewable energy continues to scale, robust power infrastructure is essential to support energy-intensive applications like AI data centers and advance factories. At PCIM, Infineon demonstrates its semiconductor technologies for efficient battery storage systems, uninterruptible power supplies, Solid-State Transformers (SST), and Solid-State Circuit Breakers (SSCB). Highlights include a demo stack for SSTs, along with SSCB components based on CoolSiC JFET technology, enabling fault isolation within microseconds and delivering high robustness for future DC grids.
• Powering AI from grid to core: Rapidly rising AI computing workloads are driving a sharp increase in data center energy demand and accelerating the shift toward new power architectures such as HVDC sidecars and DC microgrids. At PCIM, Infineon presents a comprehensive portfolio of Si, SiC, and GaN supporting this transformation from grid connection to processor core. Exhibits include power semiconductors, drivers, microcontrollers, and sensors for the latest power supply units, as well as solutions for battery backup units, intermediate bus converters, voltage regulation, and intelligent protection devices.
• Shaping the future of electromobility: Infineon is advancing electromobility as the global market leader in automotive semiconductors. PCIM highlights the link of this area, including solutions for traction inverters, DC-DC converters, on-board chargers, and battery management systems. Visitors can explore the company’s “One Inverter, One Infineon” system solution to improve drivetrain efficiency while optimizing space and cost. Additional demos showcase CoolSiC and CoolGaN power switches, the new EasyPACK S and CIPOS Prime module solutions, XENSIV sensors, and AURIX TC4xx microcontrollers.
• Empowering robotics: Robots are rapidly evolving toward physical AI systems that can sense, think, and act. At PCIM, Infineon will showcase semiconductor solutions supporting this evolution across industrial and domestic robots, humanoids, and drones. Demos include high‑efficiency motor control and power management solutions based on CoolGaN power semiconductors, PSOC Control C3 microcontrollers, and XENSIV sensors, enabling compact designs, precise control, and robust operation in future robotic applications.
• EU Cyber Resilience Act: Infineon highlights its commitment to security. At PCIM, experts will address upcoming regulatory requirements of the EU Cyber Resilience Act, illustrating how secured‑by‑design semiconductor solutions enable customers to meet compliance demands while strengthening product differentiation.

Infineon also contributes to the PCIM conference program and the various expo stages. An overview of all presentations by Infineon experts is available at www.infineon/pcim.

 

 

The post Infineon Exhibits Semiconductor Solutions for Power Infrastructure, AI Data Centers, Robotics, and Electromobility at PCIM Europe 2026 appeared first on ELE Times.

Microcontrollers (MCUs) come in a wide array of sizes for every application, from power optimized 8-bit to 32-bit high-performance MCUs running a dedicated operating system. The amount of MCUs needed to achieve a specific application is a difficult question with no correct answer. Going too high on the spectrum creates a more expensive design, while going too low makes it difficult or impossible to implement, wasting development time.

One way to help select a product is by seeing the reference designs and demos that someone else has already made. This provides a benchmark, or point of reference, that can be used to figure out if an application is feasible and cost-effective.

As an example of this, consider this IoT irrigation demo. The demo runs on the PIC32CM-GC00 family of MCUs, which sports an ARM Cortex-M23 CPU at 72 MHz. An M23 class CPU is an entry-level device architecturally, but the max frequency of 72 MHz is higher than most, which allows this part to perform tasks that are too intensive for entry-level, but don’t require the complexity of a mid-range or high-performance CPU.

In this demo, MQTT networking for smart connectivity, a 320 × 480 display over SPI with 16-bit color, and a capacitive touch keypad for user interactions were implemented on this device, as shown in Figure 1.

Figure 1 The unmounted demo includes MQTT networking, SPI-enabled display, and capacitive touch keypad. Source: Microchip

The reason this demo is achievable on an entry-level device is because of the high CPU clock speed, ample memory, and hardware peripherals. A similar device with a lower CPU clock would struggle in this application under the computational demands of rendering graphics and the latency of transferring data from the MCU to the display controller; or, in other words, the time it takes for a graphics packet to be sent to the display. These performance hits wouldn’t be a hard design failure; instead, it would be a “soft” failure from a usability perspective, which substantially impacts the user experience and perception.

Another performance benefit for embedded designs in graphics is the display controller. Unlike a larger television or computer monitor, the display controller can offload some of the more intensive tasks, like refreshing the display or storing the image buffer. Then, the embedded system only needs to send new pixel data for the changed sections in memory, saving a large number of resources.

Selective refreshing is simple in concept, but when there are a lot of assets moving around, it becomes much more challenging to implement in an efficient manner. Rather than reinventing the wheel, this application uses the Legato graphics library to handle the rendering, and Microchip Graphics Suite to design the graphic user interface (GUI).

Microchip Graphics Suite is a visual editor that allows designers to place objects and set up assets for use at runtime. The demo control screen in Microchip Graphics Suite is shown in Figure 2. When done designing, it generates code that invokes Legato underneath to handle the rendering operations.

Figure 2 Here is the view of the main screen in Microchip Graphics Suite. Source: Microchip

Moving on to the next major piece of this demo, networking. By itself, networking on its own is a herculean task. I’ve written and debugged bare-metal networking code before, and it’s a pain with hundreds of edge cases and little idiosyncrasies that break things. Besides the base complexity of implementing the protocols, the application code must format, send, receive, and parse data on a regular cadence.

Rather than go through that process again, networking and MQTT for this design were implemented by using an add-on board with a networking coprocessor that handles the network management for the main MCU. This greatly reduces the overhead on the main MCU, and it also reduces development costs. Rather than spending engineering time and (my) sanity troubleshooting a network stack implementation to figure out why the networking is not working as expected, the add-on is already tested and is known to be working.

And, to verify that this device would fit the demo needs, I verified it before writing code by using the out-of-the-box (OOB) sample for the module. The OOB program uses a PC to send commands to the add-on board and print the responses. These are saved to a log file which can be cross-referenced later to verify the sequence of operations needed to communicate with the board. Once I am confident that the module will work for this demo, development of a simple networking driver can begin. The RNWF02 add-on board (EV72E72A) uses AT commands to communicate.

Figure 3 The RNWF02 add-on board employs AT commands for communications. Source: Microchip

While the RNWF02 board handles most of the networking complexities, the networking driver on the PIC32CM-GC00 MCU still needs to keep track of the various states of connectivity the hardware is in. For instance, the Wi-Fi connection could be completed, but the device is waiting to receive a DHCP assignment. Without DHCP, an MQTT connection cannot be completed. Another possibility is that the networking is fully functional, but the MQTT broker did not accept the connection.

Finally, there is one more piece to the networking puzzle, the server side. This isn’t the direct responsibility of the main MCU, but it’s still needed to verify the module works as expected. For testing MQTT, I used the Eclipse Mosquitto plug-in broker running on a local network Home Assistant device.

Home Assistant has a few things going for it; it’s open source (Apache 2.0) and it creates a nice, visual remote GUI for the user to interact with, without going through the same process of designing and implementing an interactive user interface (Figure 4). In an end-product, a customized app would likely be used instead, but this provides a good proxy.

Figure 4 The remote GUI is built around the open-source Apache 2.0 tool. Source: Source: Microchip

The last noteworthy element to discuss in this demo is the capacitive touch keypad. This uses the MCU’s built-in peripheral touch controller (PTC) in conjunction with the touch library to determine which keys are being pressed on the keypad. Ordinarily, using the touch library is very simple, with a call to touch_process() in the main loop and checking if the measurements are done.

The touch library handles sample timings inside of its own functional calls. But in this case, since graphic rendering can take a lot of time (milliseconds), even when optimized, the touch library may not run as often as it wants, which leads to poor touch performance and, by proxy, a bad user experience.

To solve this problem, the application calls the touch library from periodic interrupt and queues but doesn’t process any touch events that occurred. Then, when the main loop is hit again, the events are dequeued and processed. This ensures the device maintains a responsive touch interface, even under heavy CPU load.

The takeaway from this application is that high-performance entry-level devices can fill a niche where an application needs to perform an intensive operation, like graphics or networking, while not being complex enough to justify a more sophisticated CPU.

At the end of the day, the point of an irrigation controller is to switch valves on and off on a timer, which is trivial for almost any MCU to accomplish. But the other value-added functions make this too intensive for entry-level performance parts, and that’s where MCUs like PIC32CM-GC00 fit in nicely.

Robert Perkel is a senior application engineer for Microchip Technology. In this role, he develops technical content such as App Notes, contributed articles, and videos. He is also responsible for analyzing use-cases of peripherals and the development of code examples and demonstrations.

Related Content

• MCUs for Space
• Connectivity invigorates MCU designs
• New i.MX MCU serves TinyML applications
• Getting started with ARM embedded MCU design
• How NoC architecture solves MCU design challenges

The post Implementing feature rich applications on entry-level MCUs appeared first on EDN.

submitted by /u/1Davide [link] [comments]

Manufacturers of circuit-protection devices have significantly improved the performance of their safety components to protect electronic devices and equipment from a range of failures caused by electrical surges and electrostatic discharge (ESD), as well as overvoltage, overcurrent, and overtemperature conditions.

At the same time, manufacturers of circuit-protection devices such as fuses, transient-voltage suppressor (TVS) diodes, and varistors have focused on providing more packaging options, particularly surface-mount variants in smaller sizes. These more compact designs help to improve assembly and reduce costs by enabling designers to switch from through-hole to surface-mount packaging.

Here is a selection of 10 circuit-protection devices, introduced over the past year, that not only deliver enhanced performance but also tackle the need to streamline assembly and reduce printed-circuit-board (PCB) space.

Fuses

Littelfuse Inc. launched its NANO2 415 SMD Series Fuse last year, targeting space-constrained applications. The fuse is designed to provide true buffering for 250-V applications with unpredictable voltage fluctuations.

The NANO2 is the company’s first surface-mount fuse with a 1,500-A interrupting rating at 277 V, safeguarding against unpredictable surges. (The device is a 2025 Electronic Products Award Winner.)

The SMD fuse allows designers to replace through-hole devices, which helps to reduce production costs and streamline assembly processes. It also enhances surge-withstand and pulse-withstand capabilities with higher I2t values than competitive solutions, according to the company.

The NANO2 415 SMD Series is an SMD alternative to the through-hole Littelfuse 215 Cartridge Series, offering a higher voltage rating (277 V, versus 250 V). These fuses can be used in a range of applications, including consumer electronics, appliances/white goods, home automation, industrial systems, and automotive.

Littelfuse’s NANO2 415 SMD Series Fuse (Source: Littelfuse Inc.)

For 12-V power rails in servers, data centers, and telecom infrastructure, Alpha and Omega Semiconductor Ltd. (AOS) offers the AOZ17517QI series 60-A eFuse, designed to integrate accurate analog current- and voltage-monitoring signals. This current-limiting-protection eFuse monitors and protects critical power rails in data centers and telecom infrastructure to protect the main power bus from interruption due to abnormal load under fault conditions.

The eFuse leverages AOS’s advanced co-packaging technology that combines a high-performance IC with protection features and the company’s latest high-safe-operating-area (SOA) Trench MOSFET. The AOZ17517QI series’ MOSFET offers low, 0.65-mΩ on-resistance that isolates the load from the input bus when the eFuse is off. Key specs include an operating voltage range of 4.5 V to 20 V and a 27-V absolute maximum rating.

Other features include programmable soft-start, startup SOA management, and other protection circuitry, including programmable overcurrent protection, short-circuit protection, undervoltage lockout, overvoltage clamp, and thermal shutdown protection.

Multiple eFuses can be used in parallel for higher-current applications. Multiple devices can operate concurrently and distribute the current during the startup phase. The series is available in two versions: the AOZ17517QI-01 (auto-restart) and AOZ17517QI-02 (latch-off), both housed in a 5 × 5-mm QFN-32L package.

AOS’s AOZ17517QI eFuse (Source: Alpha and Omega Semiconductor Ltd.)

If you’re looking for greater options in a fuse family, Bourns Inc. expanded its Multifuse MF-LSMF polymeric positive-temperature-coefficient (PPTC) resettable fuse line with nine new models. This series now offers a wider hold current and increased voltage. The new fuse models provide hold currents up to 7 A and voltage up to 72 V, with select models in SMD packaging.

The entire MF-LSMF fuse line leverages the company’s freeXpansion technology that boosts performance by incorporating higher hold currents, increasing voltages, and enhancing resistance stability in a compact footprint. These features enable the fuses to protect low-DC-voltage ports in USB, IEEE 1394, and powered Ethernet IEEE 802.3af ports.

These fuses shield against overcurrent and overtemperature events within the specified parameters. They are suited for low-voltage telecom equipment, industrial control, security systems, and portable electronics.

In addition, the MF-LSMF Series’ SMD terminals are manufactured with electroless nickel immersion gold plating for greater component reliability and longevity. This is in comparison with the nickel-tin plating commonly used for competitive fuse terminals, which are susceptible to issues such as whisker formation, oxidation, and corrosion and can cause fuse short-circuits, according to Bourns. The devices are RoHS-compliant and halogen-free.

Bourns’s MF-LSMF Series PPTC resettable fuses (Source: Bourns Inc.)

Another fuse family designed to provide more options for designers is Vishay Intertechnology Inc.’s S2F and S3F series of thin-film chip fuses in three package sizes (0402, 0603, and 1206).

The Vishay Sfernice S2F and S3F devices ensure circuit continuity with minimal resistance and reliable interruption under overload conditions. They provide options for fast- or very fast-acting protection. Applications include secondary circuit protection across a broad range of electronic systems in which stability and precision are critical.

The fuses are UL 248-14–compliant and cover rated currents from 0.315 A to 7 A. Both series combine low resistance with body temperature rise below 75°C at 100% rated current.

The key distinction between the two series is their fusing speed at 200% overload. The fast-acting S2F series is designed to open in less than one minute, while the very fast-acting S3F series is designed to open in less than five seconds. The S2F series provides protection where brief overloads are tolerable without immediate interruption, while the S3F series is optimized for sensitive circuits that require the quickest possible response, Vishay said.

These options enable designers to tailor fuse performance to the specific protection needs of their applications. The devices are lead-free, halogen-free, and RoHS-compliant.

Vishay’s thin-film chip fuses (Source: Vishay Intertechnology Inc.) TVS devices

Semtech Corp. recently expanded its SurgeSwitch family with the TDS5311P protection device as an alternative to conventional TVS diodes. Described as the industry’s first circuit-protection device to deliver near-constant clamping voltage for USB Power Delivery (PD) Extended Power Range (EPR) applications at 48 V, the TDS5311P protects power buses operating at up to 53 V. It is purpose-built for USB PD EPR systems operating at 48 V across industrial equipment, rugged mobility devices, and high-performance portable systems.

Designers face a protection gap at 53 V, Semtech said: “Conventional TVS diodes clamp inconsistently, with clamping voltage shifting across current levels and temperature ranges.”

In comparison, the TDS5311P is reported to maintain a nearly constant clamping voltage from the first microsecond of a surge event through maximum rated current, across the full −40°C to 125°C industrial temperature range.

The TDS5311P, built on the SurgeSwitch’s surge-rated FET architecture, handles 1,512-W peak pulse power and 24-A peak pulse current. It meets the IEC 61000-4-5 industrial surge standard. The protection device is housed in a small, 2.0 × 2.0-mm DFN-6 package.

Also claiming improvements over traditional solutions, Littelfuse has introduced the 5.0SMDJ-FB series of TVS diodes to protect sensitive electronic equipment from voltage transients caused by lightning and other transient-voltage events. The series delivers up to 15% lower clamping voltage over traditional solutions and maintains breakdown voltage above the reverse standoff voltage. This ensures reliable protection for sensitive downstream components such as next-generation DC/DC converters.

The lower clamping voltage via Littelfuse’s foldback technology enhances circuit-protection performance in TVS components, including I/O interfaces, VCC bus, and other vulnerable circuits used in telecom, computer, industrial, and consumer electronic applications, specifically for power over Ethernet systems, AI and data center servers, ICT equipment power supplies, and industrial DC power distribution.

The 5,000-W surface-mount solution in a DO-214AB package provides protection in harsh environments. The operating junction temperature range is −65°C to 150°C. It is a drop-in replacement for the legacy 5.0SMDJ Series with the same compact DO-214AB (SMC) footprint. It meets IEC 61000-4-2 ESD 30 kV (Air) and 30 kV (Contact) and is recognized to UL 497B as an isolated loop circuit protector.

Littelfuse’s 5.0SMDJ-FB series (Source: Littelfuse Inc.)

Microchip Technology Inc. recently introduced its JANPTX family of non-hermetic plastic TVS devices that meet the MIL-PRF-19500 qualification for high-reliability protection in aerospace and defense applications.

These surface-mount TVS devices are claimed as the first in the industry to achieve MIL-PRF-19500 qualification in a plastic package. This packaging offers a lightweight (0.25 grams), cost-efficient solution while meeting stringent military performance requirements.

The JANPTX product line is available in voltage ranges from 5 V to 175 V and offers several variants:

• JANPTX1N5555UJ
• JANPTX1N5558UG
• JANPTX1N5629AUJ
• JANPTX1N5665AUG
• JANPTX1N5907UG
• JANPTX1N5907UJ

The JANPTX family protects sensitive electronic components in demanding environments with a high peak pulse power rating of 1.5 kW and clamping response times measured at less than 100 picoseconds in internal tests. They are designed for surface-mounting and protect against voltage transients such as lightning strikes, ESD, and electrical surges.

The advanced design of these surface-mount, unidirectional TVS devices supports protection from switching transients, induced RF effects, electromagnetic pulse, and secondary lightning events and meets IEC61000-4-2, IEC61000-4-4, and IEC61000-4-5 standards. Applications include airborne avionics, electrical systems, and other mission-critical applications in which low voltage and high reliability are essential.

Microchip’s JANPTX TVS devices (Source: Microchip Technology Inc.)

Taiwan Semiconductor Co. Ltd. expanded its automotive-grade 24-V Super Clamp TVS diode series with its first compact SMC/SMB surface-mount devices. Super Clamp TVS diodes provide ultra-low clamping voltage and high surge current in space-constrained automotive designs.

The Super Clamp snapback devices provide lower clamping voltages, higher peak pulse currents, and lower voltage ratings than conventional TVSes, according to the company. This allows circuit designers to use fewer, less costly components without impacting circuit reliability.

In addition, the new devices—SMC (LSMC24CAH) and SMB (LSMB24CAH)—offer package options that can help reduce PCB space. The complete TVS series is offered in three package types: the DO-214AB (SMC), DO-214AA (SMB), and DO-218AB.

When used in compact, surface-mount PCB layouts, Super Clamp TVSes can reduce part count and eliminate the need to overdesign to achieve automotive-level reliability. The TVS devices, with maximum pulse currents of up to 300 A, provide a margin of system protection much higher than alternative options, according to the company. They are also reported to provide higher protection than MOVs and GDTs, which are subject to failure after repetitive transients.

Varistors

Kyocera AVX recently released high-temperature, automotive-grade multilayer varistors (MLVs) for 48-V power supply systems. The new addition to the TransGuard VT Series, claiming the first in the industry to offer MLVs rated for 175°C operation, supports operating temperatures extending from −55°C to 175°C with zero derating across the entire range. They are qualified to AEC-Q200, IEC 61000-4-2, and ISO 10605.

The TransGuard VT Series MLVs are zinc oxide–based, ceramic semiconductor devices that offer reliable, bidirectional overvoltage protection and EMI/RFI attenuation capabilities in compact SMT packages that reduce the need for discrete MLCCs. They offer high current- and energy-handling capabilities, multi-strike capabilities, and low leakage.

The TransGuard TVS devices meet the highest human-body model ESD classification, at Class 6, which means they can reliably withstand over 25,000 V of ESD, Kyocera said. They also have the lowest moisture-sensitivity level, at MSL 1, providing an unlimited floor life under the specified conditions. It also means they don’t require any special dry packing or handling procedures and don’t need to be baked before reflow soldering.

The new 48-V System VT Series MLVs are designed for motor vehicles with 48-V power supplies, rated for operating temperatures up to 150°C, and additionally qualified to VDA-320. The devices are available in five EIA chip sizes (0805, 1206, 1210, 1812, and 2220) and rated for 56-VDC or 40-VAC working, 100- to 110-V clamping, 48-V jump start, 30 to 1,500 A, and 0.2- to 9-J transients. The capacitance ranges from 80 to 2,800 pF. Applications include electric vehicles, including e-bikes, e-scooters, golf carts, and passenger and commercial vehicles, as well as their charging stations.

Several TransGuard VT Series MLV part numbers, including a few of the 48-V System VT Series MLVs, are also available with the company’s FlexiTerm terminations, which can withstand severe vibrations, up to 5 mm of mechanical board flexure, and up to 3,000 temperature cycles extending to 150°C without any internal cracking, exceeding the AEC-Q200 testing requirement of 1,000 cycles at up to 125°C.

Kyocera AVX’s 48-V TransGuard VT Series MLVs (Source: Kyocera AVX)

TDK Corp. has introduced the MT40 series of ThermoFuse varistors (B72240M) for surge protection of up to 50 kA. They target applications such as inverters, industrial power supplies, outdoor lighting, telecommunications systems, and surge-protection devices.

TDK calls the MT40 series a new generation of surge-protection components (SPCs), with a compact design and advanced safety features thanks to their patented overmolding technology and integrated thermal disconnecting system. These SPCs provide protection up to 50 kA in a compact package size of 38.0 × 15.2 × 40.9 mm.

Designed for extreme electrical conditions, the MT40 series offers a peak surge-current capability of up to 50 kA (8/20-μs pulse) and a short-circuit current rating of up to 200 kA. The series is recognized as a UL 1449 Type 1CA component assembly, which means they can be used in applications with AC voltages ranging from 150 V to 550 V and DC voltages from 200 V to 750 V.

Other features include a galvanically insulated, normally open micro-switch for remote monitoring and an optional visual indicator. The operating temperature range is −40°C to 85°C. They are RoHS-, REACH-, and PFAS-compliant.

TDK’s MT40 series of ThermoFuse varistors (Source: TDK Corp.)

The post Top 10 circuit-protection devices appeared first on EDN.

In booth #22020 at the IEEE MTT-S International Microwave Symposium (IMS 2026) in Thomas M. Menino Convention & Exhibition Center, Boston, MA, USA (9–11 June), Altum RF of Eindhoven, The Netherlands is showcasing its featured products and technical expertise, with company leaders answering questions about specific products, future plans and their decades of experience designing and delivering RF, microwave and millimeter-wave semiconductors...

One of the biggest drivers of growth and advances in medical electronics is the integration of artificial intelligence. AI, particularly AI-enabled diagnostic imaging, is a major driver of innovation, helping address the rising data volume and decision complexity produced by imaging-diagnostics equipment. Although wearables and implantables are a significantly smaller piece of the medical electronics pie, these segments are also driving improvements, particularly for sensors, analog front ends (AFEs), power-management devices, and wireless system-on-chips (SoCs).

(Source: Adobe Stock)

In the May/June 2026 issue, we look at how underlying technologies are driving improvements in medical electronic devices, from imaging-diagnostics equipment to wearables diagnostics such as continuous glucose monitors (CGMs).

The medical electronics market is expected to reach $11.9 billion in 2026, with a compound annual growth rate of 6.7% from 2026 to 2031, according to Mordor Intelligence. More than 600 AI-enabled devices were approved by the FDA by mid-2024, resulting in near-real-time workflows for image analysis, reducing both scan times and interpretation backlogs, according to the market research firm.

Contributing writer Abhishek Jadhav looks at how AI-powered medical imaging is turning data into faster diagnoses. Jadhav reports that computed tomography (CT) and magnetic resonance imaging (MRI) have created a growing challenge of data and decision-making. As imaging generates more information to interpret, AI helps to improve these systems by supporting faster, smarter workflows for higher-accuracy diagnoses.

He addresses the use of AI across the medical imaging pipeline and how it is augmented through a range of tasks, from the moment an exam is ordered to the final clinical interpretation; AI models in imaging diagnostics to perform complex tasks such as detecting minute pathological changes, precisely segmenting anatomical structures, and fusing information from different clinical sources; and how integrating AI into medical imaging brings enormous improvements in speed and operational efficiency.

Contributing writer Stefano Lovati looks at some real-world examples of AI/ML integration into medical systems and how it is improving imaging, robotic surgery, and remote monitoring. As AI/ML is increasingly integrated into medical systems, it is delivering smarter and faster care by bringing intelligence closer to where the data is created and used, he said.

Lovati finds that recent advances in computer vision, large language models, edge computing, and real-time signal processing are improving medical diagnosis and reducing the latency between data acquisition and actionable clinical results. This is enabling advances in robotic surgery and remote monitoring while delivering more integrated systems to improve patient care.

In the wearables space, one of the key advances in medical electronics is CGMs. These wearable devices enhance quality of life and allow clinicians to adjust therapy based on accurate, continuous data streams, reports Marco Doms, senior manager of business development of new platforms at Littelfuse Inc. He looks at the role of CGMs in connected healthcare as well as engineering challenges, including integrating protection and sensing for reliable operation, thermal monitoring and patient safety, and regulatory and compliance considerations.

CGMs have reshaped diabetes management by delivering real-time glucose readings, Doms said. But behind this innovation are complex engineering challenges: developing a device that operates safely and reliably on a micro-scale power budget and maintains precise sensing accuracy in all conditions while fitting into a small form factor, he said.

A key component driving improvements in medical electronics is sensors. With the wide range of medical devices, from wearable glucose monitors to CT and MRI scan equipment, there is a variety of sensors incorporated into these devices. Lovati looks at some key sensor technologies, such as pressure and temperature sensors, as well as biosensors and accelerometers.

He also examines how medical sensors work together with AFEs, power-management devices, and wireless SoCs to deliver solutions that maximize diagnostic accuracy, reliability, and efficiency.

Also in this issue is a product roundup of sensors launched at Sensors Converge 2026. This year’s conference spotlighted sensor and sensing solution breakthroughs for applications from wearables and smartphones to industrial and automotive. Sensor manufacturers continue to focus on shrinking solutions while addressing the need for lower-power-consumption devices.

Don’t miss the top 10 circuit-protection devices introduced over the past year. These new devices deliver enhanced performance and address the need to streamline assembly and reduce printed-circuit-board space.

Cover image: Adobe Stock

The post AI augments advances in medical electronics appeared first on EDN.

The first 50G passive optical network (PON) gateway system-on-chip (SoC) incorporates a neural processing unit (NPU) for edge AI inference and offers native compatibility with the Wi-Fi 8 standard. Broadcom’s BCM68850 CPE gateway claims to offer NPU-accelerated solutions across cable, PON, Wi-Fi, and set-top box platforms, ensuring resilient infrastructure for AI offloading and high-efficiency multi-gigabit workloads.

BCM68850 aims to reshape the broadband edge as the home’s central intelligence hub. Source: Broadcom

The gateway SoC delivers full 50G throughput to meet multi-gigabit bandwidth. Besides a dedicated NPU, which reduces cloud latency and enhances data privacy by keeping sensitive information on premises, it also features a dedicated CPU for third-party and operator applications that leverage industry-standard middleware.

That, in turn, optimizes CPU and memory resources to ensure the home gateway can handle the massive data throughput required by edge AI-centric applications. “Home gateway solutions such as Broadcom’s BCM68850 SoC are critical to future-proofing the network edge,” said Jaimie Lenderman, practice leader for optical, IP, and broadband infrastructure market research at Omdia.

The standalone 50G PON Gateway SoC claims to provide an industry-standard ITU-T path for operators to future-proof their networks by processing and transmitting high-density payloads in a fraction of a millisecond. Moreover, its “burst and release” capability ensures near-zero-jitter essential for latency-critical applications.

Broadcom is currently sampling the BCM68850 home gateway SoC to its early access customers and partners.

Related Content

• Guaranteeing QoS in PON Designs
• Broadcom delivers Wi-Fi 8 chips for AI
• Gateways bridge gap between home, Net
• CES 2026: Wi-Fi 8 silicon on the horizon with an AI touch
• Gateway lets consumer control home appliances over mobile wireless nets

The post The 50G PON gateway SoC supports edge AI, Wi-Fi 8 appeared first on EDN.

Keysight Technologies today introduces an Electrical-Optical-Electrical (EOE) simulation solution in ADS 2026. Engineers can now simulate electrical-to-optical-to-electrical signal chains within a single design environment. This capability is increasingly important as AI infrastructure and high-performance computing drive demand for faster optical links. This type of analysis is essential for setting architecture and evaluating performance.

By 2029, 87% of hyperscale optical transceivers will operate at 800 Gbps or higher, with 1.6 Tbps and 3.2 Tbps on the horizon. With optical links connecting CPUs, GPUs, and high-speed SerDes interfaces, teams need to model interactions across electrical and optical domains. Legacy simulation workflows handle these separately, requiring results from different tools to be manually stitched together, potentially missing cross-domain effects that impact system performance.

The breakthrough EOE capability in ADS 2026 enables engineers to simulate the complete signal path, from transmitters through optical and photonic circuits to electrical receivers, in a unified workflow. The solution leverages Keysight’s High Speed Digital workflow with Keysight Photonic Designer. By simulating the mixed-domain signal chain before hardware implementation, teams can evaluate electrical and optical design tradeoffs and assess signal integrity against high-speed standards earlier in the design cycle.

Key benefits of the solution include:

• Detect signal integrity issues across electrical and optical domains before prototyping: Simulate high-speed SerDes digital channels and photonics IC behavior together. It catches cross-domain issues that surface only when you model both domains simultaneously.
• Simulate bidirectional optical links as they behave in the real world: Full-duplex optical simulation captures forward and backward signal propagation within an EOE channel. It’s a capability that previous tools could not perform.
• Assess nonlinear effects across multiple wavelengths for multi-lane interconnects: Wavelength division multiplexing support within EOE simulation flows lets engineers evaluate how optical nonlinearities affect performance across wavelengths. This addresses a growing concern as 800G and 1.6T optical links use multiple wavelengths simultaneously on the same waveguide. These modulations in wavelengths and non-linearities model together as a system.
• Obtain a realistic view of system-level signal quality: Noise modeling spans the electrical and optical domains simultaneously, enabling engineers to assess performance under realistic conditions rather than modeling each domain in isolation.
• Catch nonlinear effects before they reach hardware: Modulator bias-dependent and large-signal non-linear effects are visible within end-to-end simulations.
• Make electrical-optical design trade-offs in one workflow: The electrical channel and optical envelope simulators have a patent for multi-domain co-simulation bridges, which eliminates the need to move between separate tools to evaluate trade-offs.

Beyond system-level EOE simulation, ADS 2026 covers the full design flow from system down to component optimization. Through PDK support at the circuit level and Keysight RSoft integration at the component level, engineers get a true representation of photonic IC behavior, with no disconnect between the real chip and system-level simulation.

Niels Fache, Senior Vice President, Keysight, said, “AI infrastructure depends on 800 Gbps and 1.6 Tbps optical links to move data at scale. At these speeds, electrical and optical performance can no longer be modeled separately. With ADS 2026, engineering teams can now simulate those interactions before committing to silicon.”

The post Keysight Enables End-to-End Electrical-Optical-Electrical Simulation for Data Center and Ethernet Design appeared first on ELE Times.

How to deal with the reality that a standard buck controller power stage won’t work for negative-input conversion.

Telecommunications equipment, industrial test and other applications require a negative input to negative output voltage conversion. Because dedicated controllers for this topology are rare, you need a workaround to generate a stable output.

One solution I’ve found is to connect a boost controller’s GND pin to the negative input rail, which repurposes the device as a negative-input, negative-output buck controller and eliminates additional gate-drive circuitry. It then becomes possible to have a level-shifted feedback network regulate the output. So in this power tip, I’ll discuss two approaches using a traditional switch-mode power-supply: one using a buck controller with external field-effect transistors (FETs) and one using a buck converter with integrated FETs.

Comparing standard and negative-input, negative-output buck controllers

The power stage of a standard buck controller (Figure 1) closely resembles a negative-input, negative-output topology.

Figure 1 This simplified, standard buck controller schematic resembles that of a negative-input, negative-output topology.

A buck controller operates by applying a pulse-width modulation waveform to an inductor-capacitor filter. Each switching cycle starts when the main switch turns on, increasing the inductor current. Current flows from the input capacitor through the inductance to the output capacitor and back to the input capacitor. During the off time, the current commutates to the low-side diode (or switch) and the inductor current decreases.

Why a standard buck controller power stage won’t work for negative-input conversion

A negative-input, negative-output buck controller behaves very similarly to a standard buck controller. The main difference is that all currents flow in the opposite direction.

You cannot use a standard buck controller power stage, though, because of the orientation of the diode and metal-oxide semiconductor field-effect transistor (MOSFET) (with its internal body diode). Rotate these components as shown in Figure 2.

Figure 2 This simplified schematic details a negative-input negative-output buck controller.

Note that the output voltage cannot become more negative than the input voltage.

As an example, with a –48V input and a 50% duty cycle, the controller generates a –24V output. The controller’s control law decreases the negative output voltage toward the level of the negative input by increasing the “on” time of the main FET. So at a theoretical 100% duty cycle, the output voltage nearly equals the input voltage of –48V.

A standard buck controller will also not work here because both the input and output voltages are negative. For a negative-input, negative-output buck controller, the main FET connects to –Vin, and the cathode of the diode connects to GND. However, a boost controller works if you connect the GND pin to the negative input – a necessary step because otherwise all internal signals would be negative, creating a problem. Another reason is that a boost controller uses a ground-referred gate driver. Connecting the GND pin to the input voltage allows you to drive the FET without additional circuitry.

Using a nonsynchronous boost controller as a negative-input, negative-output buck controller

Figure 3 shows an example schematic using the Texas Instruments (TI) nonsynchronous boost controller to drive the main FET of a negative-input, negative-output buck controller.

Figure 3 This simplified schematic showcases Texas Instruments’ LM5155 boost controller.

Because –Vin is connected to the GND pin, all internal signals reference –Vin. Since –Vin typically varies across an input voltage range, this behavior can cause difficulties when enabling or disabling the device, regulating the output, or other protection features. Typically, you will need a level shifter (for example, an isolated type or one with bipolar FETs) to regulate the negative output voltage.

Configuring a boost converter for negative-input operation

A boost converter with internal switches can also work in theory, because the source of the main switch connects to the GND pin and the drain of the rectifier FET connects to the Vout pin.

Figure 4 shows a block diagram of a boost converter and the connection of the switches to the integrated circuit (IC) pins.

Figure 4 This boost converter block diagram includes the switches’ connections to the integrated circuit pins.

The challenge in using a converter is that many signals are internal. Some ICs integrate the output voltage divider, which makes regulating a negative output voltage difficult. Because all internal voltages reference the negative input, the output voltage would follow the input voltage. In that case, you can use the COMP output instead of the internal feedback. Connecting an optocoupler as a level shifter between COMP and GND provides one method to regulate the negative output.

Figure 5 shows how to connect a boost converter to a negative-input, negative-output buck power stage. The GND pin connects to the negative input, and the Vout pin (or FB pin) connects to power-stage ground. You can short the FB pin and use the COMP pin with an optocoupler to regulate the output. Keep all voltages, including current-sense signals, below the maximum limits of the boost converter.

Figure 5 This simplified schematic employs the boost converter shown earlier.

Design considerations

You can use a nonsynchronous boost controller such as TI’s LM5155 or TPS40210 as a simple, cost-effective solution for generating a negative output from a negative input. To increase the efficiency, replace the diode with a MOSFET, though doing so requires a synchronous boost controller that drives two switches. Negative voltages can easily cause confusion. In particular, you must check all internal signals and verify that no voltages are exceeding the controller’s maximum rating.

Florian Mueller is a systems engineer and Member Group Technical Staff in TI’s Power Supply Design Services group. He has a master’s degree in electrical engineering from the Technical University of Haag, Germany. Florian’s main focus lies on industrial high-voltage designs for different end equipment.

 

Related Content

• Power Tips #151: Improving efficiency in 48V-input multiphase buck converters with GaN
• Power Tips #146: Design functional safety power supplies with reduced complexity
• Power Tips # 141: Tips and tricks for achieving wide operating ranges with LLC resonant converters
• Power Tips #123: Using a double-boost converter to extends the power range of high-conversion-ratio designs

The post Power Tips #153: How to generate a regulated negative output from a negative input using a boost controller appeared first on EDN.

In booth 470 (hall 7) at the PCIM Europe 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 May), Infineon Technologies AG of Munich, Germany is showcasing its semiconductor portfolio for future-proof power infrastructure, AI data centers, robotics and electro-mobility...

In booth 318 (hall 9) at the PCIM 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 May), ROHM is demonstrating how cutting-edge power semiconductor technologies contribute to higher efficiency, system miniaturization and reduced energy losses across automotive, industrial and infrastructure applications...