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Adapter makes CarPlay connectivity wireless

EDN Network - Пн, 07/20/2026 - 15:00

Bluetooth and Wi-Fi combine to untether smartphone-to-car connections…at least until the former’s battery drains, that is.

At this year’s beginning, EDN published my overview and hands-on impressions of Apple’s CarPlay and Google’s Android Auto standards, which enable a vehicle radio or automotive head unit to be a display and controller for an iOS or Android device, respectively. Historically, both protocols leveraged a wired USB-based interface between mobile device and vehicle to accomplish the integration objective, for latency, bandwidth and interference-prevention reasons. Newer vehicle models switch to Bluetooth (for initial discovery and connection) and Wi-Fi (for ongoing transmission) communication, enhancing convenience. And bridging these two approaches are wireless adapters that mate an untethered phone to the tethered vehicle.

At the end of that prior coverage, I wrote, “FYI, I’ve also got two single-protocol wireless adapter candidates sitting in my teardown pile awaiting attention.”

Today I’ll analyze the insides of a CarPlay wireless adapter, albeit not the “unit from the Luckymore Store” that I initially planned on disassembling. Next month, I plan to take apart a wireless adapter that implements the Android Auto protocol. And I’ll subsequently wrap up my dissections with a dual-protocol wireless adapter functionally akin to the one still in use in my wife’s Land Rover.

Supplier disappearance and switcheroo

Here again is the wireless CarPlay adapter I’d originally intended as today’s patient.

Right now, as I write these words, it lists for $44.17 on Amazon’s website. But when I bought it in mid-December, it was on sale for $2.99 plus tax, with free shipping. Although the merchant subsequently reported to both Amazon and me that it had shipped, it never actually arrived. And I wasn’t the only one that had this same underwhelming seller experience. Yes, I got my $3.12 back eventually. 😀

I subsequently picked up this WOLIOS adapter (which apparently also came in white), well-reviewed but seemingly no longer available for sale as I write this, from Amazon’s Warehouse-now-Resale section for $11.85 in late February.

Gotta love these conceptual teardown images. And no, I don’t definitively know what “5G” means, either, although I suspect they’re referencing “5 GHz” Wi-Fi.

And, wrapping up the “stock content” suite, a promo video (which, alas, I can’t figure out how to embed) can be found here.

Overview introductions

Now for some real-life photos, as usual accompanied by a 0.75″ (19.1 mm) diameter U.S. penny for size comparison purposes, and of the product packaging first:

Next, what’s inside:

The red disc is an optional sticker for adhering the wireless adapter to the vehicle interior. The included USB-A (female) to USB-C (male) adapter for newer-vehicle use is a nice touch:

And now for our patient:

The hole in the center allows the status LED inside to shine through, as conceptually shown in the prior “stock” images. And the seam around the rim? I’m betting that’s our path inside.

Stubborn adhesive

Speaking of paths to the insides, let’s dive in.

Abundant exposure to my wife’s hair dryer on “high” (both temperature and fan speed) helped, but only a little. I resisted using my heat gun as it might have been melt-inducing overkill.

The last bit of the panel stubbornly refused to dismantle, so I eventually turned to a cutter tool.

Finally free, courtesy of a needle-nose pliers, albeit resulting in PCB mars.

This side’s much more interesting:

The embedded antenna at upper right is curious. As previously noted, two wireless broadcast links are necessary: 2.4 GHz Bluetooth for initial setup, and Wi-Fi for ongoing streaming. The latter is usually based on the 5 GHz band for higher transfer bandwidth, since range isn’t a concern in a diminutive vehicle interior. But I only see one antenna here.

Did the manufacturer figure out some way to passably enable it to support both bands? Or is there another one somewhere that I’m overlooking? Or does this particular design, in contrast to “Wireless Compability [sic]: 5.8 GHz Radio Frequency” spec claims to the contrary, leverage 2.4 GHz Wi-Fi instead? Or…???

Equally baffling is the user-inaccessible switch in the lower left corner (with the status LED to its right, in the middle of the lower edge). What’s the switch for? And then there’s the unmarked square IC enigma above and to the switch’s right (and LED’s left). I assume it’s the application processor, and that it runs at 24 MHz (courtesy of the marked oscillator to its left).

But who makes it, and what’s its specific product code? Another mystery. These are commonly Arm-based, with Chinese fabless suppliers Allwinner and Rockchip common sources (so says Google AI Overviews, at least), although this reverse-engineered unit from early and ongoing-leading adapter supplier Carlinkit reportedly leverages a Freescale (now NXP Semiconductors) SoC, the i.MX6 UltraLite.

To its right, and to the left of (and slightly below) the aforementioned antenna(e) assembly, is a Winbond W25Q128 128 Mbit serial flash memory, presumably housing the user-upgradeable system firmware image. And then there’s the even larger shiny-shield covered square IC below the antenna(e). This one’s easier to figure out, thanks to the careful application of a flat-head screwdriver acting as a lever.

It’s Realtek’s RTL8733, supporting the device’s wireless subsystem. The RTL8733 comprehends both Bluetooth and dual-band Wi-Fi transceiver functionality and presumably operates in conjunction with the mystery application processor to implement the adapter’s wireless-to-USB wired bridge functionality.

That’s all I’ve got for you today, folks. As always, let loose with your thoughts in the comments!

Brian Dipert is the associate editor, as well as a contributing editor, at EDN.

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A New Wave of Chip Making, Phase 2 on the India Semiconductor Mission

ELE Times - Пн, 07/20/2026 - 13:59

The second phase of the India Semiconductor Mission has received a much larger budget than the first phase, with Rs 1.27 lakh crore allocated to support different areas of semiconductor and electronics manufacturing. Similar to the first phase, it is expected that most of the budget will be allocated to the selected individual projects, either as a capital subsidy (in which case, the government might contribute less than the 50% that it agreed to in the first phase) and as manufacturing-linked incentives paid on a per-unit basis once sales are completed. An added element of Incremental incentive boosters will be made available for those manufacturing those electronic goods that make use of domestic technologies and components.

It promises to extend the government’s stated intent of making India a strategic hub for the electronics value chain and build those capabilities in-house, with both intellectual and human capital, when only a few countries globally command such capabilities across different components of the value chain.

The government had stated from the very beginning that this would be a multi- decade process and its continued patronage with a more substantive kitty of money is indeed welcome. While this might not be a high job-generating industry per se, it is their strategic, geo-political considerations to deploy public funds. Whether this was a good initial wager is still largely unclear, as many of the first round of awarded projects have still to commence commercial production.

Some technology is well beyond the reach of all economies: The complexity of the machines that print nanoscale feature images from “extreme ultraviolet,” or EUV, lithography, currently mastered only by the Netherlands with a looming challenge
from Japan, means the thought of India’s committing investment to such a technology is enticing, but unfathomable. Such strategic capabilities have hard payoffs. Such a capacity to do “hard things” will breed resistance to India rapidly developing the capability and attracting talent.

 

The post A New Wave of Chip Making, Phase 2 on the India Semiconductor Mission appeared first on ELE Times.

Tata Electronics to Manufacture India’s First Large-Scale Chip Factory

ELE Times - Пн, 07/20/2026 - 12:51

Tata Electronics, a group company under the $103 billion Tata Sons conglomerate, is set to establish the country’s first commercial chip fabrication plant utilising an older technology to focus on a market segment for semiconductor designs from external customers, said an official with knowledge of the project. This would mark the first time the Indian government allocates resources to support establishing a chip making unit. The Tata Group had earlier reported the creation of India’s maiden integrated device manufacturer (IDM) in the country, a unit that designs and produces semiconductor chips in-house.

Tata Electronics Pvt. It will use technology far older than planned to produce India’s first semiconductor wafers, coming from a country with virtually no history of the sophisticated technology, highlighting how much work it will need to do to catch up. The tech unit of the sprawling Tata conglomerate will use 90-nanometer process technology for a large part of its first chip fab, which will be located in Dholera, a city in the western state of Gujarat, according to the sources.

That’s a very mature technology used in low-end industrial applications and cars – one that might even be obsolete in the coming years. It’s a more humble beginning compared with the 28nm node which Tata Sons Pvt., the group’s holding company, said would be the first step of its chipmaking innings in its annual report for the year ended March 2025.
It has been observed that Tata’s public plans could have been aspirational regarding what is realistically possible on the ground in the next couple of years. Tata’s entry into chipmaking involves a partnership with Taiwanese rival Powerchip Semiconductor Manufacturing Corp.

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STM32U3B5/C5 With 2 MB of Flash and HSP, The 1st ULP STM32 to Run AI Without Batteries

ELE Times - Пн, 07/20/2026 - 12:05

The STM32U3B5/C5 are the first STM32U3 devices featuring 2 MB of flash and our new hardware signal processor (HSP). In a nutshell, the HSP is an embedded signal processor that accelerates certain computations, enabling a whole range of industrial and AI applications on our ultra-low-power microcontroller. While the new models retain the near-threshold design that allowed the STM32U3 series to boost efficiency by a factor of four, the HSP opens the way for sensing and machine learning programs that would have been too demanding before. We wrote an accompanying blog post on the new hardware signal processor to help avid readers grasp the performance gains and what it means for the STM32 community.

What’s new? The new STM32U3B5/C5

The STM32U3B5/C5 primarily stands out from the other STM32U3 devices thanks to its HSP. It’s also why it carries double the flash memory of previous models and 640 KB of RAM, as we expect developers to need a much greater capacity for larger applications and datasets. The new device also comes with one additional group of interfaces, bringing the total to four SPI and I2C, two I3C and CAN-FD, and five UARTs. There are also five more 16-bit timers, for a total of 10. The only difference between the STM32U3B5 and the STM32U3C5 is that the latter includes a cryptocore to accelerate encryption and decryption operations, as well as offer CCB (see more on that later).

What makes the STM32U3 series special? Ultra-low-power consumption and high energy efficiency

One number sums up the efficiency of the STM32U3: at 117 Coremark/mW, it breaks the 100 symbolic threshold, literally making it a new benchmark in the industry. Indeed, most of the best devices from the competition hover below 100, and the STM32U5 reached 53.9. This significant jump in energy efficiency is due to our near-threshold design. We dedicated an entire blog article to this region of CMOS transistors that many are trying to utilize, but that has remained mainly in the background until now due to its inherent challenges.

0.65 V minimum and 105ºC maximum

In a nutshell, near-threshold conduction in a CMOS transistor occurs when applying a voltage between the gate and the source near a threshold (VT). In most of the devices used in a microcontroller like the STM32U3, that threshold is 500 mV. The vast majority of near-threshold designs apply a VGS of about 700 mV or more. And since near-threshold conduction is a diffusion current as residual leakage current flows under the gate oxide, the transistor itself experiences strict limitations in its operating voltage and temperatures. Most competing devices don’t go above 85ºC, which is why we don’t usually find these devices in industrial applications.

The STM32U3 is different because, thanks to unique optimization in the lithographic processes and manufacturing, ST can apply a lower voltage of 650 mV. The most direct benefit of a VGS value that’s closer to VT is that it helps lower the VCORE further, meaning that we can reach a minimum of 0.65 V and a typical value of 0.75 V. Additionally, as we are experiencing significantly less leakage current than competing solutions, the STM32U3 supports an operating voltage of up to 3 V and a temperature of 105ºC. It can, therefore, tolerate far harsher environments. Hence, the STM32U3 is unique because it makes near-threshold designs mainstream in most industrial applications.

Adaptive Voltage Scaling

Another issue common in near-threshold designs is die variability. Because the near-threshold region is sensitive to the smallest voltage variations, it affects dies on the same wafer more significantly. That’s why tuning each die to account for changes between them can be time-consuming and costly. To solve this challenge, ST implemented a testing system at the factory level, which automates machine learning on STM32 devices. We call it Adaptive Voltage Scaling. Simply put, our machines test each die, and a machine learning algorithm automatically tweaks various aspects to ensure consistent ultra-low-power consumption.

Versatile peripheral offering without compromising cost efficiency

Another challenge of near-threshold designs is performance. Indeed, as the VCORE is low, so is the operating frequency. However, that is not the case with the STM32U3, which features a Cortex-M33 running at 96 MHz. Moreover, we ensured that despite its more cost-effective pricing, engineers would still get a lot of peripherals and timers. Indeed, the new device supports two I3C buses, CAN-FD, one octo-SPI interface, and more. It also comes with 16 timers, including two 16-bit ones for motor control applications, and a touch-sensing controller for those working on a UI.

Robust safety and security for sensitive and mission-critical applications

Besides efficiency and performance, ST also designed the STM32U3 for safety and security. Consequently, the new device offers up to 1 MB of dual bank flash, enabling firmware updates without shutting the system down, which is often a critical consideration in mission-critical applications. The STM32U3 also introduces CCB to securely transmit keys by using independent buses ([patent filed in 2023 and 2024]). And we’ve already updated STM32CubeMX, our initialization tool. After activating the random number generator, users can select “CCB” in the list of cryptographic options and start using the feature. Finally, the STM32U3 can also target PSA L3 and SESIP3 certifications.

What’s next

To ensure the STM32U3 can reach numerous industrial applications, we are offering eight packages, which is unique for a near-threshold design. We are also releasing a Nucleo board to help developers rapidly design a proof-of-concept or run their tests to witness the ultra-low-power consumption for themselves. SmaXtec, a member of the ST Partner Program specializing in bovine monitoring already shared how,

The post STM32U3B5/C5 With 2 MB of Flash and HSP, The 1st ULP STM32 to Run AI Without Batteries appeared first on ELE Times.

Jilin University achieves record 2DEG mobility for N-polar GaN/AlGaN heterostructures on SiC

Semiconductor today - Пн, 07/20/2026 - 11:56
Researchers at Jilin University in China have reported a significant enhancement in the two-dimensional electron gas (2DEG) mobility of nitrogen-polar (N-polar) GaN/AlGaN heterostructures grown on silicon carbide (SiC) substrates by metal-organic chemical vapor deposition (MOCVD)...

NUBURU closes public offering, raising gross proceeds of $38m

Semiconductor today - Пн, 07/20/2026 - 11:53
NUBURU Inc of Centennial, CO, USA (a dual-use defense & security integrated platform company) has closed its best-efforts public offering, generating gross proceeds of about $38m, before deducting placement agent fees and other offering expenses...

India-UK Trade Agreement Opens New Opportunities for Electric Vehicle Industry in India

ELE Times - Пн, 07/20/2026 - 10:32

The effective implementation of India-UK Comprehensive Economic and Trade Agreement (CETA) on July 15, 2026, highlights a significant growth for India’s automotive and electric vehicle (EV) sector. This agreement is a landmark free trade that eliminates custom duties on thousands of products, significantly boosting exports and foreign-investment by encouraging UK companies to invest in India through supply chains and manufacturing facilities. It was introduced by Indian Prime Minister Narendra Modi and UK Prime Minister Sir Keir Stamer, officially signed in July 2025 by both nations with the primary objective of expanding bilateral trade and investment.

The CETA establishes a comprehensive framework for creating new opportunities for Indian EV manufacturers, component suppliers, and battery companies by reducing traffic barriers and improving market access. Indian automakers like Tata Motors, Mahindra, and Maruti Suzuki can export up to 88,000 vehicles to the UK completely duty-free and scale their domestic manufacturing by integrating domestic MSME suppliers deeper into the UK and global EV supply chains.

The UK gains benefits by this agreement through deepened cooperation with India’s expanding clean energy and technology sector. The CETA provides UK businesses with improved access to India’s rapidly growing market and creating opportunities for greater trade and investment. This agreement improves the UK economy by granting tariff cuts on 90% of UK exports to India, lowering costs for UK consumers, and improving market access for British products.

The agreement is fully active and remain operational to its provisions on implementation. The future goal is to double bilateral trade to 100-120 billion by 2030. The current status of this agreement is that it operates alongside the Double Contribution Convention (DCC), a social security pact that saves Indian companies up to $600 million annually by exempting Indian professionals working temporarily in the UK from paying social security contributions in both countries simultaneously.

The post India-UK Trade Agreement Opens New Opportunities for Electric Vehicle Industry in India appeared first on ELE Times.

🤩 КПІ ім. Ігоря Сікорського отримав міжнародні сертифікати відповідності вимогам стандартів ISO 9001:2015 та ISO 21001:2025

Новини - Ндл, 07/19/2026 - 21:31
🤩 КПІ ім. Ігоря Сікорського отримав міжнародні сертифікати відповідності вимогам стандартів ISO 9001:2015 та ISO 21001:2025
Image
KPI4U-2 нд, 07/19/2026 - 21:31
Текст

🤩 КПІ ім. Ігоря Сікорського отримав міжнародні сертифікати відповідності вимогам стандартів ISO 9001:2015 та ISO 21001:2025, підтвердивши ефективність системи управління якістю та системи менеджменту освітніх організацій.

Weekly discussion, complaint, and rant thread

Reddit:Electronics - Сбт, 07/18/2026 - 18:00

Open to anything, including discussions, complaints, and rants.

Sub rules do not apply, so don't bother reporting incivility, off-topic, or spam.

Reddit-wide rules do apply.

To see the newest posts, sort the comments by "new" (instead of "best" or "top").

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Making PCBs at home

Reddit:Electronics - Сбт, 07/18/2026 - 00:24
Making PCBs at home

So I made those PCBs at home. Those are adapters from SOP to DIP so prototyping is easier. Took me like a day

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NUBURU reports initial Tekne laser dazzler counter-UAS test results under Italian Plan as Golden Power review continues

Semiconductor today - Птн, 07/17/2026 - 20:09
NUBURU Inc of Centennial, CO, USA (a dual-use defense & security integrated platform company focused on non-kinetic effects and directed-energy technologies, electronic warfare and defense mobility programs, software-orchestrated defense systems and advanced manufacturing) has announced initial results from a laser dazzler counter-UAS test campaign conducted at the facilities of Tekne S.p.A. in Italy...

NUBURU’s premium-priced public offering to fund acquisition of controlling stake in Tekne

Semiconductor today - Птн, 07/17/2026 - 19:31
NUBURU Inc of Centennial, CO, USA (a dual-use defense & security integrated platform company focused on non-kinetic effects and directed-energy technologies, electronic warfare and defense mobility programs, software-orchestrated defense systems and advanced manufacturing) has announced a proposed best-efforts public offering of up to $38m of its securities...

Searches alternatives to aliexpress ( fawk UE tariff )

Reddit:Electronics - Птн, 07/17/2026 - 18:20
Searches alternatives to aliexpress ( fawk UE tariff )

I think you already know, but since July 1st a tax of €3 per ARTICLES is now mandatory. (they say it’s by categories but in reality, no)

For €30 of electronic components, I have +€50 of taxes. For a person who has started to be interested in electronics recently, it hurts.

So I come to try to find alternatives to aliexpress, with similar prices if possible… If the delivery lasts 6 months but there are no taxes I DONT CARE, I need the components at an affordable price.

Thanks, and I hope that the aliexpress sellers will quickly find a solution for us

submitted by /u/gluat
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DigiKey kinda messed up

Reddit:Electronics - Птн, 07/17/2026 - 17:50
DigiKey kinda messed up

Purchased AD SSM2019 amplifier from DigiKey, only 1 unit. Got 26… :)

submitted by /u/daduka1999
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SemiLEDs’ quarterly revenue bounces back from $1.06m to $9.07m

Semiconductor today - Птн, 07/17/2026 - 16:08
For its fiscal third-quarter 2026 (to end-May), LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has reported revenue of $9.07m, up from $1.06m last quarter, due to the increase of buy-sell purchase orders of equipment...

A ferroelectric-fluid motor may challenge magnetic-motor designs

EDN Network - Птн, 07/17/2026 - 15:00

It took 100 years to come to fruition, but this recently created fluid enables non-magnetic electrostatic-based motors.

Say the word “motor” to most engineers and they almost always associate it with magnetics of some type, whether the term is explicitly stated or not. Of course, not all electrically powered motors use magnetism: piezoelectric motors use that well-known principle and the voltage-driven elongation of a crystal, and there are also tiny MEMS-based motors.

Still, magnetics is front of mind for most cases, with motors that take electric current and power and transform it into a magnetic force that drives the rotor. (Come to think of it, there are also pneumatic and hydraulic motors often used by mechanical engineers, often with some electronic control – but that’s another story for another day.)

That’s why a recent development led by a team at the Institute of Science Tokyo may change our thinking about non-magnetic motors. They have developed a rotary motor based on electrostatic forces rather than the usual electromagnetic ones. Using a ferroelectric fluid, motors that previously required fairly high voltages on the order of 1000 V can operate at much lower voltages. (Not familiar with ferroelectric fluids, or have them confused with ferrofluids? See the sidebar at the end.)

A critical factor in their approach is that the force generated by electricity is not limited to attraction along the direction of the applied voltage. Instead, there is also a force that acts perpendicular to that direction, creating a sideways-pushing force. In conventional materials, this sideways force is extremely weak and has long been considered too small to utilize and, as a result, has attracted little attention.

However, the team demonstrated that the sideways electrostatic force can, under the right conditions, become surprisingly strong. They placed the fluid between two electrodes separated by only a few millimeters and applied a voltage. The result was striking: the liquid was pushed sideways and moved nearly 10 centimeters even against gravity. When the same experiment was performed with conventional liquids, this motion did not occur; the effect appeared only with the ferroelectric fluid.

Another interesting finding was how the force increased. In ordinary materials, increasing the voltage does not easily lead to a large increase in force. In contrast, with the ferroelectric fluid, even a small increase in voltage led to a proportional increase in force. Through detailed deep-physics analysis, the team found that the electric field causes the molecules in the liquid to align in an ordered way, generating the sideways-pushing force.

Using ferroelectric nematic liquid crystals, they were able to show that transverse electrostatic force (TEF) can elevate the fluid between electrodes with a gap of 2.5 millimeters (mm) up to more than 80 mm at only 28 V/mm, corresponding to a stress greater than 1000 newtons/m2 (Figure 1).


Figure 1 Direct observation of the TEF produced interesting results. (a) Experimental setup where TEF is balanced with the gravitational force. Voltage-dependent fluid heights at a 10mm gap under applied voltages of 0 V (b), 50 V (c), 100 V (d), and 150 V (e). Note that the zero-point height is 1 cm on the ruler. (f) Case of a 2.5mm gap at DC 80 V. (g) Height of fluid, H, plotted as a function of the applied voltage V for 1.0 (green), 2.5 (pink), 5.0 (yellow), and 10mm (purple). The data for silicone oil and nematic liquid crystal 4-cyano-4′-pentylbiphenyl (5CB) at 80 V at a 2.5mm gap are shown as a gray bullet. (h) Generated stress, σ⊥, plotted as a function of the applied electric field E. (The inset is a magnification at a 1.0mm gap.) (Image source: Springer Nature)

This discovery led to a next logical next step: if this force can push, could it also be used to create rotation? The answer is yes, and they developed a prototype motor that does not use magnets, a metal rotor, or rare-earth metals (Figure 2).


Figure 2 A prototype plastic ferroelectric motor successfully implemented rotation (Left: angled view; Right: bottom view with the lower electrode removed to reveal the resin rotor) (Image source: Institute of Science Tokyo)

The structure can also be simpler and lighter. Because the rotating part can be made of resin rather than metal, devices can be made lighter and respond more quickly. The absence of magnetic materials also means it can be used where having these materials in proximity to other system parts can induce magnetic noise or distortions.

Additional tests were done to assess both stability and scalability for the TEF-based approach (Figure 3).


Figure 3 Testing of TEF scalability and stability further confirmed concept viability. (a) Lifting a resin weight (circled in white) by TEF generated in a ferroelectric fluid, before a DC voltage was applied (upper) and after lifting for 22mm upon application of DC 20 V (lower). The mass was 5 mg, constrained between the electrodes. The interelectrode  distance was fixed at 1.0mm. (b) Experimental setup for testing TEF scalability and stability. A tensile-testing machine holds a 3D-printed resin piece whose base area is 100mm2. The resin piece is immersed in the ferroelectric fluid reservoir to a depth of 1 mm; the aluminum parallel-plate electrodes of 56 mm length were fixed at a distance of 2.5 mm. The temperature was controlled by heaters with thermocouples inserted into the reservoir. The temperature of the ferroelectric fluid was directly measured by a thermocouple immersed in the fluid. (c) Time-course measurement of TEF under 60 V DC using the tensile-testing machine experiment setup shown in (b). Generated TEF, F⊥, was plotted as a function of time t. The force represented by the red line is the five-point moving average before and after the raw data shown in gray. (Image source: Springer Nature)

Of course, the true endpoint of this project was not just to explore these fluids but make something that at least initially appears potentially useful, such as an electric motor. To do this, they built a motor roughly analogous to a DC stepper motor by following three basic design rules (Figure 4):

  1. The fundamental components should consist of three pairs of stators and two rotors.
  2. The width of the rotor should be longer than that of the stator but shorter than the sum of the width of the stator and the space between stators.
  3. The relationship between the total number of stators and rotors should be an integer multiple of 3:2.


Figure 4 The ferroelectric motor’s novel design followed three basic rules. (a) (Upper) Case of the width of a mover being shorter than that of the electrodes. (Lower) The case of the width of a mover being longer. (b) A fundamental configuration of electrodes for continuous movement. The number in the upper-left corner of each panel corresponds to the phases of the pulse shown at the bottom. (c) CAD designs and photographs of the rotor (bottom inset) and the stator (top inset). The position of the upper stator in the CAD designs is not the actual position for clarity. The outer diameter, each pole’s length, and thickness of the rotor are 18 mm, 4 mm, and 1 mm, respectively. The stator consists of three-layered electrodes (U, V, and W poles) with two insulating layers. The outer diameter, each pole’s length, and total thickness of the rotor are 28 mm, 4 mm, and 2.1 mm, respectively. The length of the overlapping part of the poles of the rotor and the stator is about 3.5 mm. The gap between the upper and lower stators is 2 mm. (d) External view of the assembled motor. (Image source: Springer Nature)

Their prototype ferroelectric motor consists of a 3-phase 24-pole stator with an 11.25° electrode angle and a 3.75° space angle between stators and a single-phase 16-pole rotor with a 12.5° electrode angle and a 10° space angle. It was driven with a 3-phase, 60-V square wave with a duty ratio of 33%.

Most electrostatic motors studied thus far required a high applied electric field of several 10–100 MV/m; in contrast, the ferroelectric motor rotated with an electric field as weak as 0.03 MV/m (here, 60 V/2 mm), which means that a driving voltage as low as one-thousandth of that figure could be used.

The most important advantage of this ferroelectric motor over ordinary electromagnetic motors is that it does not require a voltage to be applied to the rotor, which means that the rotor can be made of resin instead of metal, making it lightweight and reducing inertia. In addition, because the rotor does not need to be energized, mechanisms such as carbon brushes and slip rings are unnecessary.

The work is fully detailed in their paper “Huge transverse Maxwell stress in ferroelectric fluids and prototyping of new ferroelectric motors” published in Nature’s Communication Engineering (why there – I can’t say). It includes the associated deep-physics analysis as well as links to some “action” videos.

Do you think there’s a future for these electrostatic motors, or will real-world considerations hinder their advance? Or will they be like ferrofluids, and find uses far removed from their design objectives?

Sidebar: Ferroelectric fluids and ferrofluids

The history and development of ferroelectric fluids is a 100-year journey from an early 20th-century theoretical prediction culminating in 21st-century reality. In 1916, physicist Max Born predicted that if a fluid’s molecules possess a strong enough electric dipole, they would naturally form a spontaneously polar (ferroelectric) fluid that can withstand thermal fluctuations.

The concept of a polar, electric-field-responsive liquid was finally transformed into reality in 2017 when scientists experimentally produced the first stable ferroelectric nematic liquid crystals. They successfully synthesizing and identifies the elusive ferroelectric nematic phase in a highly polar rod-shaped molecular material (known in chemistry as RM734). This experimentally proved the existence of 3D fluids with stable, switchable macroscopic electric polarization. (See Science Advances, Development of ferroelectric nematic fluids with giant-ε dielectricity and nonlinear optical properties (2021).)

Ferroelectric fluids are easily confused with ferrofluids, but they are very different. Ferrofluids are colloidal suspensions of magnetic nanoparticles (like iron oxide) in a carrier oil and they respond to magnetic fields. They were developed by NASA’s Steve Papell in 1963 as a liquid rocket fuel that could be drawn toward a fuel pump in a weightless environment by applying a magnetic field. Although that application didn’t work out, these ferrofluids found other uses such as liquid seals around spinning drive shafts and in loudspeakers to remove heat from the voice coil while also passively damping the movement of the cone. In contrast, ferroelectric fluids (FNLCs) are pure or mixture-based 3D molecular fluids. They have spontaneous electric polarity and respond natively to electric fields.

Bill Schweber is a degreed senior EE who has written three textbooks, hundreds of technical articles, opinion columns, and product features. Prior to becoming an author and editor, he spent his entire hands-on career on the analog side by working on power supplies, sensors and signal conditioning, and wired and wireless communication links. His work experience includes many years at Analog Devices in applications and marketing, and he also developed significant mechanical-engineering insight while designing control electronics for large materials-testing systems.

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Indigenous BMD Programme Advances with Successful Multi-Layered Interceptor Trials

ELE Times - Птн, 07/17/2026 - 12:51

The Indian Ballistic Missile Defence (BMD) Programme introduced by Atal Bihari Vajpayee government following the Kargil War was developed by Defence Research and Development Organization (DRDO). It is designed to destroy both high-altitude and low- altitude incoming enemy missiles by employing a two-tier, multi-layered missile defence architecture. The objective of this system is to provide more than one opportunity to destroy an incoming missile before it reaches its target using multiple layers of detection, tracking, command-and-control, and interceptor missiles (or Anti-Ballistic Missiles).

India has successfully enhanced its indigenous missile defence capabilities after DRDO successfully demonstrated a series of flight tests conducted on June 10 and 11, 2026, which reinforce the ability of Ballistic Missile Defence (BMD) system to counter evolving long- range ballistic missile threats. The test comprised three consecutive flight trials of the Phase-2 BMD system in which interceptor missiles successfully detected, tracked, and neutralized the enemy missile attack for testing purposes. The trial also included the maiden flight test of the Naval Anti-Ship Missile Medium Range (NASM-MR), showcasing DRDO’s progress in both air and maritime defence systems.

India’s indigenous BMD architecture is designed for a multi-layered interception strategy where it can destroy enemy hostile missiles by operating at two distinct interception layers — outside the earth’s atmosphere and within Earth’s atmosphere. India is updating its defence system that can handle more complex threats such as hypersonic missiles and Intercontinental Ballistic Missiles (ICBs). The BMD system uses AD-1 and AD-2 which are advanced, high-speed interceptor missiles used to destroy long range threats travelling at extremely high speed and in different weather conditions.

Through these trial tests BMS introduced new defence advance technologies such as latest interceptor designed to address complex flight trajectories, advanced tracking radars to destroy enemy missiles, capabilities of AD-1 interceptor, and improvement in target tracking. As missile technologies continue to evolve, future BMD systems are expected to incorporate artificial intelligence, machine learning, and more capable interceptor technologies.

The post Indigenous BMD Programme Advances with Successful Multi-Layered Interceptor Trials appeared first on ELE Times.

Rohde & Schwarz Supplies Conformance Test Systems to Marquistech for India’s First GCF RTO and PTCRB ATL Lab

ELE Times - Птн, 07/17/2026 - 12:27

Marquistech has selected Rohde & Schwarz to equip its conformance and EMI/EMC test lab in Noida, India, with various systems for GCF and PTCRB certification testing. The investment includes the R&S TS8980FTA-3A RF/RRM full type approval system, the CMX500 radio communication tester for protocol conformance, the R&S TS-LBS positioning test system for location based service testing and the R&S TS9982 and R&S TS9975 EMI/EMC test systems.

With this expanded setup, Marquistech has become the first fully equipped conformance test house in India for both certification programs. The lab, strategically located in the Delhi National Capital Region, is aimed at serving companies in the mobile, IoT and wireless module markets, at a time when India is gaining importance as an export focused electronics manufacturing location.

The newly installed systems from Rohde & Schwarz support legacy 4G as well as advanced 5G features, including non terrestrial networks (NTN) and mission-critical communications (MCX), and lead in numbers of validated test cases covered. Additionally, Rohde & Schwarz has provided regulatory testing capabilities for EMC and EMI at the site to enable abroad range of services offered. This helps the test house minimize costs and reduce reliance on outsourced testing. For customers, it reduces the time to complete a certification campaign.

Marquistech has been active for some time as a GCF field testing RTO. With the expansion of their site in the Delhi National Capital Region, the company has now extended its global operations to conformance testing. This adds a broader local test offering for device makers that need certification support during development and before market entry.

Prashant Jain, VP, Marquistech, said: “Our goal is to provide a globally competitive certification hub for GCF and PTCRB testing, delivering quality, flexibility and faster time-to-market. Together with Rohde & Schwarz, we are helping strengthen the global wireless certification ecosystem.”

The local support structure provided by Rohde & Schwarz was a decisive factor for Marquistech. Rohde & Schwarz operates a major development site nearby with integrated laboratories that cover the wireless product lifecycle for conformance solutions, supported by local engineering and application teams.

The post Rohde & Schwarz Supplies Conformance Test Systems to Marquistech for India’s First GCF RTO and PTCRB ATL Lab appeared first on ELE Times.

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